KR101288782B1 - Uv 또는 euv 리소그래피용 광학 소자 - Google Patents
Uv 또는 euv 리소그래피용 광학 소자 Download PDFInfo
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- KR101288782B1 KR101288782B1 KR1020110082121A KR20110082121A KR101288782B1 KR 101288782 B1 KR101288782 B1 KR 101288782B1 KR 1020110082121 A KR1020110082121 A KR 1020110082121A KR 20110082121 A KR20110082121 A KR 20110082121A KR 101288782 B1 KR101288782 B1 KR 101288782B1
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- 230000003287 optical effect Effects 0.000 title claims abstract description 94
- 238000001900 extreme ultraviolet lithography Methods 0.000 title claims abstract description 13
- 238000000576 coating method Methods 0.000 claims abstract description 237
- 239000011248 coating agent Substances 0.000 claims abstract description 210
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 239000000463 material Substances 0.000 claims description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 17
- 239000005350 fused silica glass Substances 0.000 claims description 12
- 238000005286 illumination Methods 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 229910001096 P alloy Inorganic materials 0.000 claims description 8
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 4
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- 229910000676 Si alloy Inorganic materials 0.000 claims description 3
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 3
- 239000002241 glass-ceramic Substances 0.000 claims description 3
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- QXYJCZRRLLQGCR-UHFFFAOYSA-N molybdenum(IV) oxide Inorganic materials O=[Mo]=O QXYJCZRRLLQGCR-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 43
- 230000000694 effects Effects 0.000 description 12
- 230000005855 radiation Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 239000006096 absorbing agent Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Optical Elements Other Than Lenses (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
도 1은 EUV 리소그래피 장치의 실시예를 개략적으로 도시한다.
도 2는 조명 시스템의 일 실시예를 개략적으로 도시한다.
도 3a 내지 도 3c는 종래의 광학 요소를 개략적으로 도시한다.
도 4a 및 도 4b는 추가적인 코팅을 갖는 광학 요소의 일 실시예를 개략적으로 도시한다.
도 5는 추가적인 코팅을 포함하는 광학 요소의 일 실시예에서의 변형과, 비교 가능한 종래의 광학 요소에서의 변형을 도시한다.
도 6은 거울 세그먼트로서 형성된 4개의 광학 요소의 거울 세그먼트 배열을 개략적으로 도시한다.
도 7a는 기능성 코팅만 구비한 기본적으로 삼각형인 거울 세그먼트의 변형의 분포를 도시한다.
도 7b는 측면 상에만 코팅을 구비한 기본적으로 삼각형인 거울의 변형의 분포를 도시한다.
도 7c는 기본적으로 삼각형이고 상부면 상에 기능성 코팅을 갖고 측면 상에 코팅을 갖는 거울 세그먼트의 표면을 가로지는 변형의 분포를 도시한다.
Claims (17)
- 제1항에 있어서,
기능성 코팅(36, 46)은 광학 유효 코팅 및 연마 가능한 코팅 중 어느 하나 또는 양자 모두로서 구성되는
광학 소자. - 제1항 또는 제2항에 있어서,
제1 표면(32, 42) 상의 기능성 코팅(36, 46) 및 제2 표면(33, 43) 상의 코팅(47) 중 어느 하나 또는 양자 모두는 공통 에지(35, 45)까지 연장하는
광학 소자. - 제1항 또는 제2항에 있어서,
인장 응력 또는 압축 응력이 각각 제1 표면(32, 42) 상의 기능성 코팅(36, 46)과 제2 표면(33, 43) 상의 코팅(47) 모두에 존재하도록, 제2 표면(33, 43) 상의 코팅(47)의 재료 및 두께 중 어느 하나 또는 양자 모두가 결정되는
광학 소자. - 제1항 또는 제2항에 있어서,
X는 1.2와 3.0 사이의 값인
광학 소자. - 제1항 또는 제2항에 있어서,
기판(31, 41)은 제1 표면(32, 42)과 대향하는 제3 표면(34, 44)을 가지며, 제3 표면(34, 44)은 코팅(48)을 포함하는
광학 소자. - 제7항에 있어서,
제3 표면(34, 44) 상의 코팅(48)의 두께(t3)와 응력(σ3)의 곱이 제1 표면(32, 42) 상의 기능성 코팅(36, 46)의 두께(t1)와 응력(σ1)의 곱과 동일하도록, 제3 표면 상의 코팅의 두께(t3) 및 응력(σ3)이 결정되는
광학 소자. - 제1항 또는 제2항에 있어서,
기능성 코팅(36, 46) 및 제2 표면(33, 43) 상의 코팅(47) 모두의 열팽창 계수는 기판(31, 41)의 열팽창 계수보다 큰
광학 소자. - 제1항 또는 제2항에 있어서,
기능성 코팅 및 제2 표면(33, 43) 상의 코팅(47) 모두의 열팽창 계수는 기판(31, 41)의 열팽창 계수보다 작은
광학 소자. - 제1항 또는 제2항에 있어서,
제2 표면(33, 43) 상의 코팅(47)의 열팽창 계수는 기판(31, 41)의 열팽창 계수와 동일한
광학 소자. - 제1항 또는 제2항에 있어서,
제2 표면(33, 43) 상의 코팅(47)의 열팽창 계수는 기판(31, 41)의 열팽창 계수와 동일한 부호를 갖는
광학 소자. - 제1항 또는 제2항에 있어서,
제2 표면(33, 43) 상의 코팅(47)은 비정질 실리콘, 니켈-인 합금, 다이아몬드상 카본, 몰리브덴, 및 실리콘 다이옥사이드를 포함하는 그룹으로부터의 하나 이상의 재료를 포함하는
광학 소자. - 제1항 또는 제2항에 있어서,
기판(31, 41)은 구리, 구리 합금, 알루미늄, 알루미늄 합금, 알루미늄-실리콘 합금, 용융 실리카, 도핑 용융 실리카, 티타늄 도핑 용융 실리카, 유리 세라믹, 칼슘 플루오라이드, 실리콘 카바이드, 실리콘-실리콘 카바이드 및 실리콘을 포함하는 그룹 중 하나의 재료로 이루어지는
광학 소자. - 제1항 또는 제2항에 있어서,
광학 소자는 패싯 거울(16, 17, 114, 116)의 패싯(18, 19) 또는 거울 세그먼트 어레이(60)의 거울 세그먼트(61)로서 형성되는
광학 소자. - 제1항 또는 제2항에 따른 광학 소자를 구비하는 UV 또는 EUV 리소그래피 장치용 조명 시스템.
- 자외선 또는 극자외선 파장 범위용 리소그래피 장치이며,
제1항 또는 제2항에 따른 광학 소자를 포함하는
리소그래피 장치.
Applications Claiming Priority (2)
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DE102010039496.3 | 2010-08-19 | ||
DE102010039496 | 2010-08-19 |
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KR20120018085A KR20120018085A (ko) | 2012-02-29 |
KR101288782B1 true KR101288782B1 (ko) | 2013-07-22 |
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Country Status (4)
Country | Link |
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US (1) | US8848167B2 (ko) |
JP (1) | JP5913863B2 (ko) |
KR (1) | KR101288782B1 (ko) |
DE (1) | DE102011079933A1 (ko) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102011002953A1 (de) * | 2011-01-21 | 2012-07-26 | Carl Zeiss Smt Gmbh | Substrat für Spiegel für die EUV-Lithographie |
DE102011003077A1 (de) * | 2011-01-25 | 2012-07-26 | Carl Zeiss Smt Gmbh | Verfahren zur Herstellung eines Substrates für ein reflektives optisches Element für die EUV-Lithographie |
DE102011076549A1 (de) * | 2011-05-26 | 2012-11-29 | Carl Zeiss Smt Gmbh | Optische Anordnung in einer mikrolithographischen Projektionsbelichtungsanlage |
DE102013215541A1 (de) | 2013-08-07 | 2015-02-12 | Carl Zeiss Smt Gmbh | Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage |
JP2016530517A (ja) * | 2013-08-14 | 2016-09-29 | ディーエイチ テクノロジーズ デベロップメント プライベート リミテッド | イオン移動度の方法及び装置 |
TWI676083B (zh) * | 2013-09-25 | 2019-11-01 | 荷蘭商Asml荷蘭公司 | 光束傳遞裝置及方法 |
DE102014219755A1 (de) * | 2013-10-30 | 2015-04-30 | Carl Zeiss Smt Gmbh | Reflektives optisches Element |
DE102015105058A1 (de) | 2015-04-01 | 2016-10-06 | Endress+Hauser Flowtec Ag | Strömungsgleichrichter |
DE102016110351B4 (de) | 2016-06-03 | 2019-08-29 | Carl Zeiss Meditec Ag | Verfahren zur Herstellung eines optischen Elements |
US11619764B2 (en) * | 2020-03-27 | 2023-04-04 | Raytheon Company | High-performance optical surface |
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- 2011-08-12 US US13/208,823 patent/US8848167B2/en active Active
- 2011-08-18 KR KR1020110082121A patent/KR101288782B1/ko active IP Right Grant
- 2011-08-18 JP JP2011179057A patent/JP5913863B2/ja active Active
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Also Published As
Publication number | Publication date |
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JP2012069925A (ja) | 2012-04-05 |
US8848167B2 (en) | 2014-09-30 |
JP5913863B2 (ja) | 2016-04-27 |
US20120044473A1 (en) | 2012-02-23 |
KR20120018085A (ko) | 2012-02-29 |
DE102011079933A1 (de) | 2012-02-23 |
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