KR101251073B1 - Plasma doping apparatus having shadow mask and method of plasm doping using the same - Google Patents

Abstract

The plasma doping apparatus having a shadow mask of the present invention includes a chamber outer wall defining a reaction space in which a plasma is formed therein, a support for supporting a doping object at the bottom of the chamber outer wall, and a doping object connected to the support. A direction perpendicular to the surface of the doped object so as to be disposed within or outside the plasma sheath region within the reaction space, the power supply applying a bias to the power source and overlapping a portion of the doped object on the doped object in the reaction space. It includes a shadow mask mounted to be movable to.

Description

Plasma doping apparatus having a shadow mask and a plasma doping method using the same {Plasma doping apparatus having shadow mask and method of plasm doping using the same}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a doping apparatus and a doping method for doping in the manufacture of a semiconductor device, a liquid crystal display, an organic light emitting display device, a solar cell, and the like. In particular, a plasma doping apparatus having a shadow mask and plasma doping using the same It is about a method.

In general, before performing impurity ion doping for manufacturing a semiconductor device, a liquid crystal display, an organic light emitting display device, and a solar cell, a photolithography process of masking a part of a surface of a doping object is performed. That is, by forming a resist film pattern on the doping object that exposes the surface of the doping object on which the doping object is to be doped, the doping object area that should not be doped is protected. The photolithography process may be performed through a series of processes such as a resist film coating process, an exposure process, a developing process, and a cleaning process.

However, the photolithography process acts as a major cause of increasing the manufacturing cost, and the resist layer pattern residues remaining even after the doping is completed and the resist layer pattern is removed serve as a major cause of the defect. In order to prevent this, the cleaning process must be performed in depth to completely remove the resist film pattern, but there is a problem that side effects may occur such that the characteristics of the device are changed by the cleaning liquid used in the cleaning process.

Therefore, in recent years, attempts to perform the doping process using a shadow mask have increased rapidly. By using the shadow mask, the formation of the resist film pattern on the surface of the doping target film can be omitted, and thus the photolithography process itself can be omitted. However, when the shadow mask is used, there is a difficulty in controlling the doping profile, and there is a limit that productivity is poor because it takes a lot of time to mount and move the shadow mask in the doping apparatus.

An object of the present invention is to provide a plasma doping apparatus and a plasma doping method using the same, which can improve productivity by eliminating the time required to mount and move the shadow mask in the doping apparatus.

According to an embodiment of the present invention, a plasma doping apparatus includes a chamber outer wall defining a reaction space in which a plasma is formed, a support for supporting a doping object at the bottom of the chamber outer wall, and a bias connected to the support to apply a bias to the doping object. And a power source and an upper portion of the doped object in the reaction space so as to be movable in a direction perpendicular to the surface of the doped object so as to be disposed inside or outside the plasma sheath region in the reaction space. It includes a shadow mask to be mounted.

In one example, the shadow mask has a plurality of openings that expose some surfaces of the doped object.

(λ_D는 전자 Debye 길이, Vo는 시스 포텐셜, Te는 전자 온도)의 식에 의해 결정된다.In one example, the plasma sheath region is formed from a doped object surface.

(λ _D is the electron Debye length, Vo is the cis potential, and Te is the electron temperature).

According to another embodiment of the present invention, a plasma doping apparatus includes a chamber outer wall defining a reaction space in which a plasma is formed, a support for supporting a doping object at the bottom of the chamber outer wall, and a support connected to the support to apply a bias to the doping object. Disposed to overlap the power source and a portion of the doped object in the reaction space, and disposed inside the plasma sheath area in the reaction space to prevent plasma doping of the overlapped area of the doped object. Contains shadow masks.

According to another embodiment of the present invention, a plasma doping apparatus includes a chamber outer wall defining a reaction space in which a plasma is formed, a support for supporting a doping object at the bottom of the chamber outer wall, and a bias connected to the support to apply a bias to the doping object. And a portion of the doped object in the reaction space and overlapping with a portion of the doped object in the reaction space, wherein the plasma sheath is disposed in the reaction space so that some plasma doping is performed on the overlapped region of the doped object. Contains shadow masks.

In the plasma doping method according to an embodiment of the present invention, a plasma doping method using a plasma doping apparatus having a reaction space in which a plasma is formed therein and a support on which a doping object is supported is disposed, and a shadow mask is disposed in the reaction space. A plasma doping is performed in a state in which the shadow mask is placed in the plasma sheath area when plasma doping is not performed on the doped object overlapping the shadow mask, and the plasma is applied to the doped object overlapping the shadow mask. In the case where the doping is partially performed, plasma doping is performed while the shadow mask is disposed on the plasma sheath area.

In one example, the shadow mask has a plurality of openings that expose some surfaces of the doped object.

(λ_D는 전자 Debye 길이, Vo는 시스 포텐셜, Te는 전자 온도)의 식에 의해 결정된다.In one example, the plasma sheath region is formed from a doped object surface.

(λ _D is the electron Debye length, Vo is the cis potential, and Te is the electron temperature).

In one example, when the plasma doping is performed while the shadow mask is disposed on the plasma sheath region, the plasma doping process and the ion recovery process are repeatedly performed.

In the plasma doping method according to another embodiment of the present invention, a plasma doping method using a plasma doping apparatus having a reaction space in which a plasma is formed therein and a support on which a doping object is supported is disposed, and a shadow mask is disposed in the reaction space. The method may further include performing plasma doping in a state where the shadow mask is disposed in the plasma sheath region to prevent plasma doping of the doped object overlapping the shadow mask.

In the plasma doping method according to another embodiment of the present invention, a plasma doping apparatus using a plasma doping apparatus having a reaction space in which a plasma is formed therein and a support on which a doping object is supported is disposed, and a shadow mask is disposed in the reaction space. The method includes performing plasma doping with a shadow mask disposed on a plasma sheath region to cause partial plasma doping of a doped object that overlaps the shadow mask.

In one example, the plasma doping process and the ion recovery process are repeatedly performed.

According to the present invention, by fixing the shadow mask in the plasma doping apparatus, the time required for mounting and moving the shadow mask in the plasma doping apparatus is unnecessary, and in particular, local plasma doping can be performed by making the shadow mask move vertically. The benefits of doing so are provided.

1 is a view schematically showing a plasma doping apparatus having a shadow mask according to an embodiment of the present invention.
2 and 3 are views illustrating a plasma doping method using the plasma doping apparatus of FIG. 1.
4 is a view schematically showing a plasma doping apparatus having a shadow mask according to another embodiment of the present invention.
FIG. 5 is a graph illustrating a distribution of resistance values according to positions when plasma doping is performed using the plasma doping apparatus of FIG. 4.

1 is a view schematically showing a plasma doping apparatus having a shadow mask according to an embodiment of the present invention. 2 and 3 are diagrams for explaining a plasma doping method using the plasma doping apparatus of FIG. First, referring to FIG. 1, the plasma doping apparatus 100 according to the present example includes a chamber outer wall 110 defining a reaction space in which plasma is formed and a doping object 200 at the bottom of the chamber outer wall 110. A support 120 for supporting the power source, a power supply 130 connected to the support 120 to apply a bias to the doping object 200, and a portion of the doping object 200 above the doping object 200 in the reaction space. It includes a shadow mask 140 disposed to overlap with. The shadow mask 140 is mounted to be movable in a direction perpendicular to the surface of the doping object 200, as indicated by arrows in the figure.

The shadow mask 140 may be located outside the plasma sheath region S, as shown in FIG. 2, or may be located inside the plasma sheath region S, as shown in FIG. 3. have. The plasma sheath region S refers to a region where ions, electrons, etc. in the plasma state do not diffuse in a steady state to which no external bias is applied. The thickness of the plasma sheath region S is calculated by Equation 1 below according to Child Law.

In Equation 1, λ _D represents an electron Debye length, Vo is a cis potential, and Te is an electron temperature.

As shown in FIG. 2, when the shadow mask 140 is located outside the plasma sheath region S, plasma doping of the first region A and the second region B of the doped object 200 is performed. . Here, the first region A of the doping object 200 is a region that does not overlap the shadow mask 140, and the second region B is an region that overlaps the shadow mask 140. Therefore, the first region A of the doped object 200 is normally plasma doped, and the second region B of the doped object 200 is partially doped with plasma. Specifically, since the shadow mask 140 is located outside the plasma sheath area S, some plasma ions are present on the lower surface of the shadow mask 140. Therefore, the plasma ions are doped into the second region B of the doped object 200 by the negative bias applied by the power supply 130. When all plasma ions disappear from the lower surface of the shadow mask 140 by this process, plasma doping is performed after the plasma ions are placed again on the lower surface of the shadow mask 140 through an ion recovery process. To perform.

As shown in FIG. 3, when the shadow mask 140 is positioned inside the plasma sheath region S, plasma doping is performed in the first region A of the doped object 200, but the Plasma doping is not performed in the second region (B). That is, since the shadow mask 140 is in the plasma sheath region S, plasma ions do not exist on the lower surface of the shadow mask 140, and therefore, even if a negative bias is applied through the power supply 130, the shadow mask 140 and the shadow mask 140 are not present. Plasma doping is not performed in the overlapping second region B. FIG.

4 is a view schematically showing a plasma doping apparatus having a shadow mask according to another embodiment of the present invention. In FIG. 4, the same reference numerals as used in FIG. 1 denote the same elements, and thus redundant descriptions thereof will be omitted. Referring to FIG. 4, in the plasma doping apparatus 100 according to the present example, the shadow mask 240 has a plurality of openings 242 exposing some surfaces of the doping object 200. Therefore, plasma doping is performed through the openings 242 both in the case where the shadow mask 240 is in the plasma sheath area S and outside the plasma sheath area S. FIG.

FIG. 5 is a graph illustrating a distribution of resistance values according to positions when plasma doping is performed using the plasma doping apparatus of FIG. 4. Referring to FIG. 5, a high dose of plasma doping is performed in the first region A of the doped object 200 that does not overlap with the shadow mask 240, regardless of the position of the shadow mask 240. As a result, the resistance Rs is low. On the other hand, in the second region B of the doping object 200 overlapping the shadow mask 240, the shadow mask 240 is located outside the plasma sheath region S (a line indicated by “520” in the drawing). Partial plasma doping, so the resistance Rs in this region is higher than in the first region A. FIG. When the shadow mask 240 is positioned inside the plasma sheath region S (see the line indicated by “530” in the drawing), plasma doping is not performed in the second region B of the doped object 200. Therefore, the resistance Rs in this region is the highest. As such, according to the present invention, the plasma doping process may be rapidly performed by fixing the shadow mask 240 at an appropriate position in the plasma doping chamber 100 according to the profile to be doped of the doping object 200.

100.Plasma doping device 110.Chamber outer wall
120 Support 130 Power
140.Shadowmask 200 ... Doping Objects

Claims (12)

delete delete delete delete delete In the plasma doping method using a plasma doping apparatus having a reaction space in which a plasma is formed therein and a support for supporting a doping object is disposed at the bottom, and a shadow mask is disposed in the reaction space.
Performing plasma doping in a state where the shadow mask is placed in a plasma sheath area when plasma doping is not performed on the doping object overlapping with the shadow mask; And
Plasma doping is performed in a state where the shadow mask is disposed on the plasma sheath area when the plasma doping is partially performed on the doping object overlapping the shadow mask, but the plasma doping process and the ion recovery process are repeatedly performed. Plasma doping method comprising a. The method according to claim 6,
The shadow mask has a plurality of openings for exposing a portion of the surface of the doping object plasma doping method. The method according to claim 6,
The plasma sheath region is formed from the surface of the doping object.

(λ _D is electron Debye length, Vo is cis potential, Te is electron temperature). delete delete In the plasma doping method using a plasma doping apparatus having a reaction space in which a plasma is formed therein and a support for supporting a doping object is disposed at the bottom, and a shadow mask is disposed in the reaction space.
Plasma doping is performed on the doping object overlapping with the shadow mask by performing plasma doping in a state where the shadow mask is disposed on the plasma sheath region, and repeatedly performing plasma doping and ion recovery. Plasma doping method comprising. delete

Images