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KR101250932B1 - An antenna for mobile electronics and the producing method thereof - Google Patents

An antenna for mobile electronics and the producing method thereof Download PDF

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Publication number
KR101250932B1
KR101250932B1 KR1020130011698A KR20130011698A KR101250932B1 KR 101250932 B1 KR101250932 B1 KR 101250932B1 KR 1020130011698 A KR1020130011698 A KR 1020130011698A KR 20130011698 A KR20130011698 A KR 20130011698A KR 101250932 B1 KR101250932 B1 KR 101250932B1
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KR
South Korea
Prior art keywords
antenna
plated
solution
nickel
mobile device
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KR1020130011698A
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Korean (ko)
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권윤규
김영준
황규욱
이도연
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이도연
(주)대영케이티엑스
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/36Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/12Supports; Mounting means
    • H01Q1/22Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/24Supports; Mounting means by structural association with other equipment or articles with receiving set
    • H01Q1/241Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM
    • H01Q1/242Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/24Reinforcing the conductive pattern
    • H05K3/241Reinforcing the conductive pattern characterised by the electroplating method; means therefor, e.g. baths or apparatus

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Chemically Coating (AREA)

Abstract

PURPOSE: An antenna for mobile electronics and a producing method thereof are provided to reduce fabrication costs and the number of fabrication processes by using a laser for forming an antenna part. CONSTITUTION: Laser is irradiated on the surface of a housing object(C) to form an antenna unit(A). A catalyst metal compound is absorbed in a recess part(1). The catalyst metal compound is changed into a catalyst metal by an oxidation-reduction reaction. The housing object is precipitated in alkaline etchant to remove the catalyst metal absorbed in a peripheral unit(P). A first nickel-boron alloy layer(5) is electroless-plated by using the catalyst metal as a seed. The copper layer(6) is electroless-plated in the upper side of the first nickel-boron alloy film. A catalyst metal palladium(4) is absorbed in the upper side of the electroless-plated copper layer. A second nickel-boron alloy film(7) is electroless-plated in the upper side of the copper layer.

Description

모바일기기의 안테나 및 그 제조방법{An antenna for mobile electronics and the producing method thereof}An antenna for a mobile device and a method for manufacturing the same

본 발명은 모바일기기의 안테나 및 그 제조방법에 관한 것으로서, 더욱 상세하게는 ABS(arcrylonitrile-butadiene-styrene), PC(polycarbonate) 등의 합성수지로 사출성형된 모바일기기의 케이스 또는 하우징의 표면을 에칭(etching)하여 촉매금속을 흡착시키고, 무전해 도금방법으로 니켈 및 구리를 도금하는 모바일기기의 안테나 및 그 제조방법에 관한 것이다.The present invention relates to an antenna of a mobile device and a method of manufacturing the same, and more particularly, to etch the surface of a case or a housing of a mobile device injection-molded with synthetic resin such as ABS (arcrylonitrile-butadiene-styrene), PC (polycarbonate) The present invention relates to an antenna of a mobile device for adsorbing a catalytic metal by etching and plating nickel and copper by an electroless plating method and a method of manufacturing the same.

최근에는, 각종 전기, 전자기기의 경량화와 소형화로 인하여 부품 소재로 ABS(arcrylonitrile-butadiene-styrene), PC(polycarbonate) 등 합성수지가 널리 이용되고 있다.In recent years, synthetic resins such as ABS (arcrylonitrile-butadiene-styrene) and PC (polycarbonate) have been widely used as component materials due to the weight reduction and miniaturization of various electric and electronic devices.

한편, 합성수지는 재질의 중량이 가볍고, 사출성형으로 제품의 형상화가 용이하며, 생산비용 측면에서 금속보다 저렴한 장점이 있으나, 전기 전도가 필요한 부품의 경우에는 합성수지의 부도체 특성상 제조하기 곤란한 단점이 있다.On the other hand, the synthetic resin is light in weight, easy to shape the product by injection molding, and has the advantage of cheaper than the metal in terms of production cost, but in the case of parts requiring electrical conduction is difficult to manufacture due to the insulator properties of the synthetic resin.

특히, 휴대폰, 태블릿컴퓨터 등 경량화, 박막화가 급속하게 적용되는 모바일기기에서는 합성수지로 성형된 모바일기기의 케이스 또는 하우징에 무선통신을 위한 안테나를 형성하는 것이 절실히 필요하고, 이에 따라 최근에 다양한 방법이 개발되고 있다.In particular, in mobile devices such as mobile phones and tablet computers that are rapidly applied in weight reduction and thinning, it is urgently necessary to form an antenna for wireless communication in the case or housing of a mobile device made of synthetic resin, and thus, various methods have recently been developed. It is becoming.

한편, 합성수지 케이스와 같은 합성수지 피도금물에 안테나를 형성하기 위해서는 전기가 통전되는 금속막이 필요하며, 이러한 금속막을 형성하는 도금방법으로서, ABS 합성수지의 경우에는 ABS 합성수지의 부타디엔(butadiene) 성분을 용해하여 표면에 요철을 생성하고, 상기 요철에 촉매금속을 흡착시키고, 상기 촉매금속을 시드로서 이용하여 무전해도금하는 방법이 있다.On the other hand, in order to form an antenna on a synthetic resin coated object such as a synthetic resin case, a metal film through which electricity is applied is required.As a plating method for forming such a metal film, in the case of ABS synthetic resin, butadiene component of ABS synthetic resin is dissolved There is a method of forming irregularities on the surface, adsorbing a catalyst metal to the irregularities, and electroless plating using the catalyst metal as a seed.

한편, 근래에 상기 ABS 합성수지보다 내후성, 내약품성 등의 물성이 우수하여 전기기기에 광범위하게 사용되는 PC 합성수지의 경우에는 유기용제를 이용하여 합성수지 피도금물의 표면을 에칭하여 요철을 생성하고, 상기 요철에 촉매금속을 흡착시키고, 상기 촉매금속을 시드(seed)로서 이용하여 무전해도금하는 방법이 있다. On the other hand, recently, in the case of PC synthetic resin widely used in electrical equipment because of excellent physical properties such as weather resistance, chemical resistance and the like than the ABS synthetic resin by etching the surface of the synthetic resin plated material using an organic solvent, There is a method of adsorbing a catalyst metal to unevenness, and electroless plating using the catalyst metal as a seed.

또한, 다른 방법으로는 합성수지에 중금속을 혼합하여 케이스, 하우징 등 피도금물을 사출성형하고, 레이저로 피도금물의 표면을 에칭하여 혼합된 중금속을 노출시키고, 상기 노출된 중금속을 시드(seed)로 이용하여 무전해 도금하는 방법이 있다.In another method, a heavy metal is mixed with a synthetic resin to injection molded a case, a housing, and the like, and the laser is etched to expose a mixed heavy metal, and the exposed heavy metal is seeded. There is a method of electroless plating using.

한편, 종래의 ABS 합성수지의 도금방법을 이용한 모바일기기의 안테나 제조방법으로서, PC 합성수지와 ABS 합성수지가 케이스를 사출성형하고, 별도의 사출성형금형을 이용하여 상기 케이스의 표면에 안테나 부분이 형성되도록 ABS 합성수지만을 이용하여 이중으로 사출성형한 후, 상기 안테나 부분의 부타디엔 성분을 용해하여 표면에 요철을 생성하고, 상기 요철에 촉매금속을 흡착시킨 후, 상기 촉매금속을 시드로서 이용하여 무전해도금하는 방법이 등록특허공보 제10-0975012호에 상세히 개시되어 있다.On the other hand, as a method of manufacturing an antenna of a mobile device using a conventional method of ABS synthetic resin, ABS synthetic resin and PC synthetic resin injection molding the case, using a separate injection molding mold to form an antenna portion on the surface of the case After double injection molding using only synthetic resin, the butadiene component of the antenna portion is dissolved to form irregularities on the surface, and the catalyst metal is adsorbed on the irregularities, followed by electroless plating using the catalyst metal as a seed. This patent is disclosed in detail in Patent Publication No. 10-0975012.

그러나, 상기 종래의 모바일기기의 안테나를 제조하는 방법은 ABS 합성수지의 도금방법을 이용하기 위해서 상기 케이스에 50% 이상의 ABS 합성수지가 포함되어야 하므로 ABS 합성수지의 특성상 내후성, 내약품성 등의 품질이 저하되는 문제점이 있었다.However, the method of manufacturing the antenna of the conventional mobile device has a problem that the quality of the weather resistance, chemical resistance, etc. are deteriorated in the characteristics of the ABS synthetic resin because at least 50% ABS synthetic resin should be included in the case in order to use the plating method of ABS synthetic resin There was this.

또한, 안테나부를 형성하기 위해서 이중으로 사출성형하여야 하므로, 별도의 사출성형금형이 필요하고, 제조시간이 증가되어 제조비용이 상승하는 문제점도 있었다.In addition, in order to form an antenna part, since injection molding has to be doubled, a separate injection molding mold is required, and there is a problem in that manufacturing time increases and manufacturing cost increases.

한편, 케이스, 하우징 등 피도금물에 PC 합성수지를 사용할 경우에는, 피도금물의 표면에 요철을 형성하기 위해 사용되는 유기용제에 합성수지가 급격히 용해되므로 에칭속도를 조절하기 곤란하고, 안테나부을 형성하기 위해서 감광제 또는 마스킹(marsking)제를 이용한 별도의 패턴형성공정이 추가되므로 제조비용이 상승하는 문제점이 있었다.On the other hand, when PC synthetic resin is used for the object to be plated such as a case or a housing, it is difficult to control the etching rate because the synthetic resin is rapidly dissolved in the organic solvent used to form the unevenness on the surface of the plated object. In order to add a separate pattern forming process using a photosensitive agent or a masking (marsking), there was a problem that the manufacturing cost increases.

또한, 상기 중금속이 혼합된 합성수지의 도금방법을 이용하여 안테나를 제조하는 경우에는 원자재 가격이 일반 합성수지에 비하여 상당히 고가이므로 제조비용이 증가되고, 도금하는 과정에 안테나부 이외의 표면에서 도금 금속이 석출되어 품질이 저하되는 문제점도 있었다.In addition, when the antenna is manufactured using the plating method of the synthetic resin in which the heavy metal is mixed, since the raw material price is significantly higher than that of the general synthetic resin, the manufacturing cost is increased, and the plating metal is deposited on the surface other than the antenna part during the plating process. There was also a problem that the quality is reduced.

본 발명은 상기와 같은 종래기술의 문제점을 해결하기 위해 창안된 것으로, 본 발명의 목적은 무전해도금을 이용하여 합성수지로 성형된 모바일기기에 밀착력이 높고 균일한 도금막을 형성하며, 100% PC수지를 사용할 수 있고, 공정이 간단하여 제조비용이 절감되는 모바일기기의 안테나 및 그 제조방법을 제공하는 데 있다.The present invention has been made to solve the problems of the prior art as described above, the object of the present invention is to form a high adhesion and uniform plating film on a mobile device molded of synthetic resin using electroless plating, 100% PC resin It can be used, and the process is simple to provide an antenna of the mobile device and a method of manufacturing the manufacturing cost is reduced.

상기한 목적을 달성하기 위한 본 발명에 의한 모바일기기의 안테나 제조방법은, 합성수지로 성형된 모바일기기의 케이스 또는 하우징 피도금물의 표면에 레이저를 조사하여 안테나부를 형성하면서 미세한 요철를 생성하는 레이저활성단계와; 상기 안테나부의 표면에 형성된 요철의 크기가 증가 되도록 산성의 에칭용액을 이용하여 에칭하는 에칭단계와; 상기 피도금물을 촉매흡착용액에 침적하여 상기 안테나부에 무전해도금이 가능토록 상기 요철 내부에 촉매금속화합물을 흡착시키는 제1촉매흡착단계와; 상기 피도금물을 산성의 촉매활성용액에 침적하고 산화환원반응을 이용하여 상기 안테나부에 흡착된 촉매금속화합물을 촉매금속으로 변환하는 촉매활성단계와; 상기 피도금물을 알카리성 제1부분에칭용액에 침적하여 상기 안테나부 이외의 주변부에 흡착된 촉매금속을 제거하는 제1부분에칭단계와; 상기 피도금물을 제2촉매흡착용액에 침적하여 상기 안테나부의 표면에 촉매금속을 흡착시켜 보충하는 제2촉매흡착단계와; 상기 피도금물을 제2부분에칭용액에 침적하여 상기 제2촉매흡착단계에서 상기 주변부에 흡착된 촉매금속을 제거하면서 상기 안테나부 표면의 거칠기(roughness)가 감소되도록 에칭하는 제2부분에칭단계와; 상기 안테나부의 표면에 흡착된 촉매금속을 시드(seed)로서 이용하여 제1니켈-붕소(Ni-B)합금막을 무전해 도금하는 제1니켈도금단계로; 구성된 것을 특징으로 한다.An antenna manufacturing method of a mobile device according to the present invention for achieving the above object, the laser active step of generating a fine concavo-convex while forming an antenna unit by irradiating a laser to the surface of the case or the housing to be plated of the mobile device molded of synthetic resin Wow; An etching step of etching using an acidic etching solution so that the size of the unevenness formed on the surface of the antenna unit is increased; A first catalyst adsorption step of adsorbing a catalyst metal compound inside the unevenness to allow electroless plating on the antenna part by depositing the plated object on a catalyst adsorption solution; A catalytic activity step of depositing the plated object in an acidic catalytically active solution and converting the catalytic metal compound adsorbed to the antenna unit into a catalytic metal by using a redox reaction; A first partial etching step of removing the catalytic metal adsorbed to a peripheral portion other than the antenna portion by immersing the plated object in an alkaline first partial etching solution; A second catalyst adsorption step of depositing the plated object in a second catalyst adsorption solution to adsorb and supplement a catalyst metal on the surface of the antenna unit; A second partial etching step of immersing the plated object in a second partial etching solution to remove the catalyst metal adsorbed to the periphery in the second catalyst adsorption step and to reduce the roughness of the surface of the antenna part; ; A first nickel plating step of electroless plating a first nickel-boron (Ni-B) alloy film using a catalyst metal adsorbed on the surface of the antenna unit as a seed; Characterized in that configured.

상기 안테나부의 표면에 도금된 도금막의 전도성이 증가되도록 상기 제1니켈도금단계에서 도금된 제1니켈-붕소합금막 상면에 구리막을 무전해 도금하는 구리도금단계가 더 포함되는 것을 특징으로 한다.A copper plating step of electroless plating a copper film on the upper surface of the first nickel-boron alloy film plated in the first nickel plating step so as to increase the conductivity of the plating film plated on the surface of the antenna unit is further included.

상기 구리도금단계에서 도금된 구리막의 상면에 촉매금속 파라듐을 흡착시키는 제3촉매흡착단계와; 상기 구리막의 상면에 제2니켈-붕소합금막을 무전해 도금하는 제2니켈도금단계가 더 포함되는 것을 특징으로 한다.A third catalyst adsorption step of adsorbing the catalytic metal palladium on the upper surface of the copper film plated in the copper plating step; And a second nickel plating step of electroless plating the second nickel-boron alloy film on the upper surface of the copper film.

상기 에칭단계의 에칭용액은 황산 10~15Vol%, 물 85~90Vol%로 조성되고 50~60℃로 가열된 것을 특징으로 한다.The etching solution of the etching step is characterized in that the composition is composed of sulfuric acid 10 ~ 15Vol%, water 85 ~ 90Vol% and heated to 50 ~ 60 ℃.

상기 제1촉매흡착단계의 촉매흡착용액 물 969.6~994.9g/L, 염화파라듐(PdCl2) 0.1~0.4g/L, 염화제일주석(SnCl2) 5~30g/L의 혼합용액 70~90Vol%와, 98%의 염산(HCl) 10~30Vol%를 혼합하여 조성된 것을 특징으로 한다.The catalyst adsorption solution of the first catalyst adsorption step water 969.6 ~ 994.9g / L, palladium chloride (PdCl 2 ) 0.1 ~ 0.4g / L, tin chloride (SnCl 2 ) 5 ~ 30g / L mixed solution 70 ~ 90Vol % And 98% hydrochloric acid (HCl) is characterized in that the composition by mixing 10-30% by volume.

상기 촉매활성단계의 촉매활성용액은 98%의 황산 4~8Vol%, 물 92~96Vol%의 혼합으로 조성된 것을 특징으로 한다.The catalytically active solution of the catalytic activity step is characterized in that the composition of 98% sulfuric acid 4 ~ 8Vol%, water 92 ~ 96Vol% mixture.

상기 제1부분에칭단계의 제1부분에칭용액은 물 900~950g/L, 불화암모늄 50~100g/L로 조성되고, 40~70℃로 가열된 것을 특징으로 한다.The first partial etching solution of the first partial etching step is composed of water 900 ~ 950g / L, ammonium fluoride 50 ~ 100g / L, characterized in that heated to 40 ~ 70 ℃.

상기 제2촉매흡착단계의 제2촉매흡착용액은 물 999.6~999.9g/L, 염화파라듐(PdCl2) 0.1~0.4g/L로 조성된 염화파라듐용액 70~90Vol%와, 98%의 염산 10~30Vol%로 조성된 것을 특징으로 한다.The second catalyst adsorption solution of the second catalyst adsorption step is a palladium chloride solution 70-90Vol% and 98% of 999.6-999.9 g / L of water and 0.1-0.4 g / L of palladium chloride (PdCl 2 ). It is characterized in that the composition of hydrochloric acid 10 ~ 30Vol%.

상기 제2부분에칭용액은 물 910~950g/L, 불화암모늄 50~90g/L로 조성된 불화암모늄용액 83~90Vol%와 98%의 황산 10~17Vol%로 조성되고, 40~70℃로 가열된 것을 특징으로 한다.The second partial etching solution is composed of 83 to 90 Vol% of ammonium fluoride solution and 10 to 17 Vol% of 98% sulfuric acid composed of water 910 to 950 g / L, ammonium fluoride 50 to 90 g / L, and heated to 40 to 70 ° C. It is characterized by.

상기 모바일기기의 안테나는 상기 제조방법에 따라 제조된 것을 특징으로 한다.The antenna of the mobile device is characterized in that manufactured according to the manufacturing method.

이와 같이 본 발명에 의한 모바일기기의 안테나 제조방법은 다음과 같은 효과가 있다.As described above, the method for manufacturing an antenna of a mobile device according to the present invention has the following effects.

첫째, 레이저활성단계에서 피도금물의 표면에 레이저를 조사하여 안테나부를 형성함으로써 제조공정 수가 감소되어 제조비용이 절감되며,First, in the laser activation step, by irradiating a laser on the surface of the plated object to form an antenna portion, the number of manufacturing processes is reduced, thereby reducing the manufacturing cost,

둘째, 레이저활성단계와 에칭단계를 이용하여 합성수지의 표면에 요철을 생성할 수 있으며, 특히 내후성, 내약품성이 우수한 100% PC 수지를 사용할 수 있어 제품의 품질이 향상되고,Secondly, irregularities can be generated on the surface of the synthetic resin by using the laser activation step and the etching step, and in particular, 100% PC resin having excellent weather resistance and chemical resistance can be used, thereby improving product quality.

셋째, 레이저활성단계와 에칭단계를 이용하여 안테나부에 균일한 요철을 형성함으로써 밀착력이 향상되고 균일한 두께의 도금막을 형성할 수 있어 제품의 신뢰성이 향상되며,Third, by using the laser activation step and the etching step to form uniform irregularities in the antenna portion, the adhesion can be improved and the plating film of uniform thickness can be formed, thereby improving the reliability of the product.

넷째, 제1부분에칭단계와 제2부분에칭단계에서 안테나부 이외 표면에 흡착된 촉매금속을 제거함으로써 안테나 불량이 감소되어 제품의 품질이 향상되고,Fourth, by removing the catalytic metal adsorbed on the surface other than the antenna portion in the first partial etching step and the second partial etching step, antenna defects are reduced, thereby improving product quality.

다섯째, 제2촉매흡착단계에서 구리도금막의 상면에 촉매금속 파라듐을 흡착시킴으로써, 제2니켈무전해도금단계에서 형성된 제2니켈-붕소합금막과 구리막의 밀착력을 향상시켜 제품의 품질이 향상되며,Fifth, by adsorbing the catalytic metal palladium on the upper surface of the copper plating film in the second catalyst adsorption step, the adhesion of the second nickel-boron alloy film formed in the second nickel electroless plating step and the copper film is improved to improve the quality of the product. ,

여섯째, 제1니켈-붕소합금막/구리막/제2니켈-붕소합금막으로 구성된 도금막을 형성함으로써, 도금막의 전도성이 커지며 전기적 특성이 향상되어 제품의 품질이 향상되는 효과가 있다.Sixth, by forming a plating film composed of the first nickel-boron alloy film / copper film / second nickel-boron alloy film, the conductivity of the plating film is increased and the electrical properties are improved, thereby improving the product quality.

도 1은 본 발명에 따른 모바일기기의 안테나 제조방법을 나타낸 흐름도이며,
도 2는 본 발명에 따른 모바일기기의 안테나 제조방법의 단계별 안테나부와 주변부를 종 단면도로 나타내 보인 모식도이다.
1 is a flowchart illustrating a method of manufacturing an antenna of a mobile device according to the present invention.
Figure 2 is a schematic diagram showing a longitudinal cross-sectional view of the antenna unit and the peripheral portion of the antenna manufacturing method of a mobile device according to the present invention.

이하에서는 첨부도면을 참고하여 본 발명에 따른 바람직한 실시예를 보다 상세하게 설명하며, 피도금물의 표면에서 안테나가 형성되는 부분을 안테나부(A)라 하고, 상기 안테나부(A) 이외의 부분을 주변부(P)라 한다.Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment according to the present invention, the portion in which the antenna is formed on the surface of the plated object is called the antenna portion (A), other than the antenna portion (A) Is called the peripheral portion (P).

본 발명에 따른 모바일기기의 안테나의 제조방법은, 도 1과 도 2에 나타낸 바와 같이, 합성수지로 성형된 모바일기기의 케이스 또는 하우징 피도금물(C)의 표면에 레이저를 조사하여 안테나부(A)를 형성하면서 미세한 요철를 생성하는 레이저활성단계(S10)와; 상기 안테나부(A)의 표면에 형성된 요철의 크기가 증가되도록 산성의 에칭용액을 이용하여 에칭하는 에칭단계(S40)와; 상기 피도금물을 촉매흡착용액에 침적하여 상기 안테나부(A)에 무전해도금이 가능토록 상기 요철(1) 내부에 촉매금속화합물을 흡착시키는 제1촉매흡착단계(S50)와; 상기 피도금물(C)을 산성의 촉매활성용액에 침적하고 산화환원반응을 이용하여 상기 안테나부(A)에 흡착된 촉매금속화합물을 촉매금속으로 변환하는 촉매활성단계(S60)와; 상기 피도금물(C)을 알카리성 제1부분에칭용액에 침적하여 상기 주변부(P)에 흡착된 촉매금속을 제거하는 제1부분에칭단계(S70)와; 상기 피도금물(C)을 제2촉매흡착용액에 침적하여 상기 안테나부(A)에 촉매금속을 흡착시켜 보충하는 제2촉매흡착단계(S80)와; 상기 피도금물(C)을 제2부분에칭용액에 침적하여 상기 제2촉매흡착단계(S80)에서 상기 주변부(P)에 흡착된 촉매금속을 제거하면서 상기 안테나부(A) 표면의 거칠기(roughness)가 감소되도록 에칭하는 제2부분에칭단계(S90)와; 상기 안테나부(A)의 표면에 흡착된 촉매금속을 시드(seed)로서 이용하여 제1니켈-붕소(Ni-B)합금막(5)을 무전해 도금하는 제1니켈도금단계(S100)로 구성된다. In the method of manufacturing an antenna of a mobile device according to the present invention, as shown in Figs. 1 and 2, the antenna unit (A) by irradiating a laser on the surface of the case or the housing to be plated (C) of the mobile device molded of synthetic resin Laser active step (S10) for generating fine irregularities while forming a); An etching step (S40) of etching using an acidic etching solution so that the size of the unevenness formed on the surface of the antenna unit A is increased; A first catalyst adsorption step (S50) of adsorbing a catalyst metal compound inside the unevenness (1) to allow electroless plating on the antenna unit (A) by depositing the plated material on a catalyst adsorption solution; A catalytically active step (S60) of depositing the plated material (C) in an acidic catalytically active solution and converting the catalytic metal compound adsorbed to the antenna unit A to a catalytic metal using a redox reaction; A first partial etching step (S70) of depositing the plated material (C) in an alkaline first partial etching solution to remove the catalytic metal adsorbed on the peripheral portion (P); A second catalyst adsorption step (S80) of dipping the plated object (C) in a second catalyst adsorption solution to adsorb and supplement a catalyst metal in the antenna unit (A); The roughness of the surface of the antenna portion A is removed by depositing the plated object C on the second partial etching solution while removing the catalytic metal adsorbed to the peripheral portion P in the second catalyst adsorption step S80. A second partial etching step (S90) for etching to reduce the number of steps; In the first nickel plating step (S100) of electroless plating the first nickel-boron (Ni-B) alloy film 5 using the catalyst metal adsorbed on the surface of the antenna unit A as a seed. It is composed.

상기 안테나부(A)의 표면에 도금된 도금막의 전도성이 증가되도록 상기 제1니켈도금단계(S100)에서 도금된 제1니켈-붕소합금막(5) 상면에 구리막(6)을 무전해 도금하는 구리도금단계(S110)가 더 포함된다.Electroless plating of the copper film (6) on the upper surface of the first nickel-boron alloy film (5) plated in the first nickel plating step (S100) to increase the conductivity of the plating film plated on the surface of the antenna portion (A) Copper plating step (S110) is further included.

상기 구리도금단계(S110)에서 도금된 구리막(6)의 상면에 촉매금속 파라듐(4)을 흡착시키는 제3촉매흡착단계(S130)와; 상기 구리막(6)의 상면에 제2니켈-붕소합금막(7)을 무전해 도금하는 제2니켈도금단계(S140)가 더 포함된다.A third catalyst adsorption step (S130) of adsorbing the catalytic metal palladium (4) on the upper surface of the copper film (6) plated in the copper plating step (S110); A second nickel plating step (S140) of electroless plating the second nickel-boron alloy film 7 on the upper surface of the copper film 6 is further included.

이하에서는 상기 단계별로 보다 상세하게 설명한다.Hereinafter, the steps will be described in more detail.

상기 레이저활성단계(S10)는, 도 2의 (a)에 도시된 바와 같이, 상기 피도금물의 안테나가 형성될 부분에만 레이저를 조사하여 안테나부(A)를 형성하면서, 레이저의 전자파에너지를 이용하여 상기 안테나부(A)의 표면을 미세하게 파쇄하여 일정한 밀도로 다량의 요철(1)을 형성하는 단계이다.In the laser activation step (S10), as shown in (a) of FIG. By finely crushing the surface of the antenna unit (A) by using to form a large amount of irregularities (1) with a constant density.

한편, 상기 주변부(P)에도 합성수지의 특성과 사출성형조건에 따라 미량의 미세한 주변요철(2)이 존재한다.On the other hand, the peripheral portion (P) also has a small amount of fine peripheral unevenness (2) according to the characteristics of the resin and the injection molding conditions.

이때, 상기 레이저활성단계(S10)는 다이오드(diode)레이저, UV(ultra violet)레이저, 엑시머(excimer)레이저 등이 사용될 수 있으며, 800~1100nm 파장의 다이오드레이저를 사용하는 것이 바람직하다.At this time, the laser activation step (S10) may be a diode laser, UV (ultra violet) laser, excimer (excimer) laser and the like, it is preferable to use a diode laser of 800 ~ 1100nm wavelength.

또한, 상기 피도금물(C)에 레이저를 조사하기 전에 피도금물(C)의 표면에 존재하는 이물질이 제거되도록 수세세척하고 건조하는 것이 바람직하다.In addition, before irradiating the laser on the plated object (C), it is preferable to wash with water and dry to remove the foreign matter present on the surface of the plated object (C).

이때, 상기 수세세척은 샤워방식으로 피도금물(C)에 물을 투사하여 세척하거나, 3단의 수조로 구성된 수세욕조에 침적하여 세척할 수 있다.At this time, the water washing may be washed by projecting water onto the plated object (C) by a shower method, or by washing in a washing bath consisting of a three-stage water tank.

다음, 상기 레이저활성단계(S10)를 실시한 후, 먼지 또는 피도금물(C)의 미세한 파편, 취급시 오염될 수 있는 기름성분이 제거되도록 알칼리성 수용액을 이용하여 탈지하는 탈지단계(S20)와 수세세척단계(미도시)가 포함되는 것이 바람직하다.Next, after performing the laser activation step (S10), the degreasing step (S20) and washing with degreasing using an alkaline aqueous solution so that fine debris of dust or plated material (C), oil components that may be contaminated during handling are removed. Preferably, a washing step (not shown) is included.

상기 탈지단계(S20)는 물과 메타규산나트륨이 혼합된 탈지용액에 상기 피도금물(C)을 5~10분간 침적하여 표면의 먼지, 피도금물(C)의 미세한 파편, 기름성분을 제거한다.In the degreasing step (S20), the plated material (C) is immersed in a degreasing solution in which water and sodium metasilicate are mixed for 5 to 10 minutes to remove surface dirt and fine debris and oil components of the plated material (C). do.

또한, 상기 탈지용액은 용액 1리터에 대해서 40~90g 메타규산나트륨이 혼합되고, 60~70℃로 가열하여 사용되는 것이 바람직하다. In addition, the degreasing solution is preferably mixed with 40 ~ 90g sodium metasilicate per 1 liter of solution, and heated to 60 ~ 70 ℃.

한편, 상기 수세세척단계(미도시)는 깨끗한 물이 차례로 교체될 수 있도록 수위가 다른 3단 수조로 구성된 수세욕조에 하단수조부터 상단수조로 순차적으로 침적하여 세척하며, 이 후 본 발명의 각 공정단계 후에 상기 수세세척단계가 포함되는 것이 바람직하다. On the other hand, the water washing step (not shown) is sequentially washed from the lower tank to the upper tank in the washing tub consisting of three stage water tank so that the clean water can be replaced in turn, and then each process of the present invention It is preferable that the washing step is included after the step.

또한, 상기 탈지단계(S20) 다음에 상기 피도금물(C)의 표면에 잔존하는 미량의 탈지용액을 산성용액을 이용하여 제거하며 표면을 중화시키는 중화단계(S30)가 포함되는 것이 바람직하다.In addition, the degreasing step (S20) it is preferable to include a neutralization step (S30) to remove the trace amount of the degreasing solution remaining on the surface of the plated (C) by using an acidic solution and neutralize the surface.

상기 중화단계(S30)는 98%의 황산 5~10Vol%, 물 90~95Vol%로 혼합된 중화용액에 20~30℃에서, 1~3분간 침적하여 상기 피도금물을 중화한다.The neutralization step (S30) is neutralized by plating for 1 to 3 minutes at 20 ~ 30 ℃ in a neutralizing solution mixed with 98% sulfuric acid 5 ~ 10Vol%, water 90 ~ 95Vol%.

다음, 상기 수세세척단계와 동일하게 수세세척하는 것이 바람직하다.Next, it is preferable to wash the water in the same manner as the washing step.

상기 에칭단계(S40)는, 도 2의 (b)에 나타낸 바와 같이, 산성의 에칭용액을 이용하여 상기 피도금물(C)의 안테나부(A)에 형성된 요철(1)의 폭과 깊이의 크기가 확대되도록 에칭하는 단계이다.The etching step (S40), as shown in (b) of Figure 2, using the acidic etching solution of the width and depth of the unevenness (1) formed in the antenna portion (A) of the plated material (C) Etching so that the size is enlarged.

이때, 상기 안테나부(A)는 레이저의 전자파에너지에 의해서 표면의 결합력이 약화되어 에칭이 되나, 상기 주변부(P)는 에칭되지 않는다.At this time, the antenna portion A is etched by weakening the bonding force of the surface by the electromagnetic wave energy of the laser, but the peripheral portion (P) is not etched.

상기 에칭용액은 황산 10~15Vol%, 물 85~90Vol%로 조성되며, 상기 피도금물(C)은 상기 에칭용액에 50~60℃에서, 1~3분간 침적되어 표면이 에칭된다.The etching solution is composed of sulfuric acid 10 ~ 15Vol%, water 85 ~ 90Vol%, the plated (C) is immersed in the etching solution at 50 ~ 60 ℃, 1-3 minutes to etch the surface.

다음, 상기 피도금물(C)의 표면에 잔존하는 상기 에칭용액이 제거되도록 상기 수세세척단계와 동일한 방법으로 세척하는 것이 바람직하다.Next, it is preferable to wash in the same manner as the washing step to remove the etching solution remaining on the surface of the plated (C).

한편, 상기 피도금물(C)은 부도체의 합성수지로 성형되었으므로 상기 안테나부(A)에 직접 무전해도금을 실시할 수 없다.On the other hand, the plated object (C) is formed of a synthetic resin of a non-conductor, so it is not possible to perform electroless plating directly on the antenna unit (A).

상기 제1촉매흡착단계(S50)는 상기 피도금물(C)을 촉매흡착용액에 침적하여 상기 레이저활성단계(S10)와 에칭단계(S40)에서 형성된 상기 안테나부(A)에 무전해도금이 가능토록 상기 안테나부(A)의 요철(1) 내부에 촉매금속화합물을 흡착시키는 단계이다.The first catalyst adsorption step (S50) is the electroless plating on the antenna portion (A) formed in the laser activation step (S10) and the etching step (S40) by immersing the plated (C) in a catalyst adsorption solution. It is a step of adsorbing the catalytic metal compound inside the unevenness (1) of the antenna unit (A).

한편, 상기 촉매흡착용액은 물 969.6~994.9g/L, 염화파라듐(PdCl2) 0.1~0.4g/L, 염화제일주석(SnCl2) 5~30g/L의 혼합용액 70~90Vol%와, 98%의 염산(HCl) 10~30Vol%를 혼합하여 조성되고, 상기 피도금물을 상기 촉매흡착용액에 20~30℃에서, 2~3분간 침적하여 상기 요철(1)의 내부에 촉매금속화합물을 흡착시키는 것이 바람직하다.On the other hand, the catalyst adsorption solution is a mixture solution of water 969.6 ~ 99.1g / L, palladium chloride (PdCl 2 ) 0.1 ~ 0.4g / L, tin chloride (SnCl 2 ) 5 ~ 30g / L and 70 ~ 90Vol%, It is formed by mixing 10-30 vol% of 98% hydrochloric acid (HCl), and the plated material is deposited in the catalyst adsorption solution at 20-30 ° C. for 2 to 3 minutes to form a catalytic metal compound inside the unevenness (1). It is preferable to adsorb.

이때, 레이저의 조사로 생성되고, 상기 에칭단계(S40)에서 크기가 확대된 상기 안테나부(A)의 요철(1) 내부에는, 도 2의 (c)에 나타낸 바와 같이, 파람듐-주석(Pd-Sn)(3)의 촉매금속화합물이 흡착된다.At this time, inside the unevenness 1 of the antenna portion A, which is generated by the irradiation of the laser and whose size is enlarged in the etching step S40, as shown in (c) of FIG. 2, the palladium-tin ( The catalytic metal compound of Pd-Sn) (3) is adsorbed.

또한, 상기 주변부(P)의 주변요철(2) 일부에도 미량의 파라듐-주석(3)이 흡착된다.In addition, a small amount of palladium-tin (3) is also adsorbed to a part of the peripheral unevenness (2) of the peripheral portion (P).

다음, 상기 피도금물(C)의 표면에 잔존하는 상기 촉매흡착용액이 제거되도록 상기 수세세척단계와 동일한 방법으로 세척하는 것이 바람직하다.Next, it is preferable to wash in the same manner as the washing step to remove the catalyst adsorption solution remaining on the surface of the plated (C).

상기 촉매활성단계(S60)는 상기 피도금물(C)을 산성의 촉매활성용액에 침적g하고 산화환원반응을 이용하여 촉매금속화합물의 주석 성분을 제거하여 상기 안테나부(A)에 흡착된 파라듐-주석(3) 촉매금속화합물을 촉매금속인 파라듐(Pd)(4)으로 변환하는 단계이다.The catalytically active step (S60) is a wave adsorbed to the antenna unit (A) by depositing the plated product (C) in an acidic catalytically active solution and removing tin components of the catalytic metal compound using a redox reaction. It is a step of converting the radium-tin (3) catalyst metal compound into palladium (Pd) (4) which is a catalyst metal.

한편, 상기 촉매활성단계(S60)에서 사용되는 촉매활성용액은 98%의 황산 4~8Vol%, 물 92~96Vol%의 혼합으로 조성되고, 상기 피도금물(C)을 상기 촉매활성용액에 20~30℃에서, 1~2분간 침적함으로써 상기 파라듐-주석(3) 촉매금속화합물이 촉매금속 파라듐(4)으로 변환된다.On the other hand, the catalytically active solution used in the catalytic activity step (S60) is composed of a mixture of 98% sulfuric acid 4 ~ 8Vol%, water 92 ~ 96Vol%, the plating material (C) to the catalytically active solution 20 The palladium-tin (3) catalytic metal compound is converted into the catalytic metal palladium (4) by immersion for 1 to 2 minutes at ˜30 ° C.

이때, 상기 촉매활성단계(S60)까지 진행된 상기 안테나부(A)에 생성된 요철(1)에 흡착되어 있는 상기 촉매금속 파라듐(4)을 시드(seed)로 이용하여 무전해도금이 가능하게 된다.In this case, electroless plating is possible by using the catalyst metal palladium (4) adsorbed on the unevenness (1) generated in the antenna unit (A), which has been performed up to the catalytic activation step (S60), as a seed. do.

한편, 도 2의 (c)에 나타낸 바와 같이, 상기 주변부(P)에 있는 상기 주변요철(2)의 일부에도 상기 제1촉매흡착단계(S50)에서 흡착제 역할을 하는 주석(Sn)으로 인하여 파라듐-주석(3) 촉매금속화합물이 흡착되고, 도 2의 (d)에 나타낸 바와 같이, 상기 촉매활성단계(S60)에서 상기 촉매금속 파라듐(4)으로 변환되어 남아있게 된다.On the other hand, as shown in (c) of Figure 2, due to tin (Sn) that acts as an adsorbent in the first catalyst adsorption step (S50) even a part of the peripheral irregularities (2) in the peripheral portion (P). The radium-tin (3) catalytic metal compound is adsorbed and is converted into the catalytic metal palladium (4) and remains in the catalytic activation step (S60), as shown in FIG.

따라서, 안테나의 성능이 저하되지 못하도록 상기 주변부(P)에 흡착된 상기 촉매금속 파라듐(4)은 제거되어야 한다.Therefore, the catalytic metal palladium 4 adsorbed to the peripheral portion P should be removed so that the performance of the antenna is not degraded.

상기 제1부분에칭단계(S70)는, 도 2의 (e)에 나타낸 바와 같이, 상기 피도금물을 알카리성 제1부분에칭용액에 침적하여 상기 주변부(P)에 흡착된 촉매금속 파라듐(4)을 제거하는 단계이다.The first partial etching step (S70), as shown in (e) of FIG. 2, the catalyst metal palladium (4) adsorbed on the peripheral portion P by immersing the plated product in an alkaline first partial etching solution. ) Step.

이때, 상기 제1부분에칭단계(S70)는 물 900~950g/L, 불화암모늄 50~100g/L로 조성된 상기 제1부분에칭용액을 40~70℃로 가열하고 상기 피도금물을 50~60초 침적하여 실시된다.At this time, the first partial etching step (S70) is heated to 40 ~ 70 ℃ the first partial etching solution composed of 900 ~ 950g / L water, 50 ~ 100g / L ammonium fluoride and 50 ~ 60 seconds of deposition is carried out.

한편, 상기 주변부(P)에 있는 주변요철(2)은 깊이와 폭의 크기가 미세하여 흡착된 촉매금속 양이 적고, 상기 제1부분에칭용액을 이용하므로써, 상기 안테나부(A)를 보호하는 별도의 마스킹(masking) 공정 없이 상기 제1부분에칭단계(70)를 실시하여 상기 주변부(P)에 흡착된 파라듐(4) 촉매금속을 제거할 수 있다.On the other hand, the peripheral concave-convex (2) in the peripheral portion (P) has a small depth and width of the amount of the catalytic metal adsorbed, and by using the first partial etching solution, to protect the antenna portion (A) The first partial etching step 70 may be performed without a separate masking process to remove the palladium 4 catalyst metal adsorbed on the peripheral portion P.

다음, 상기 수세세척단계와 동일하게 수세세척하는 것이 바람직하다.Next, it is preferable to wash the water in the same manner as the washing step.

상기 제2촉매흡착단계(S80)는 상기 제1부분에칭단계(70)에서 상기 안테나부(A)의 일부 제거된 촉매금속이 보충되도록 촉매금속 파라듐(4)을 흡착시키는 단계이다. The second catalyst adsorption step (S80) is a step of adsorbing the catalytic metal palladium 4 so that the catalytic metal partially removed from the antenna unit A is replenished in the first partial etching step 70.

한편, 도 2의 (f)에 나타낸 바와 같이, 상기 안테나부(A)에 촉매금속 파라듐이 보충되면서, 상기 주변부(P)에 있는 주변요철(2)의 일부에도 미량의 상기 촉매금속 파라듐(4)이 흡착된다.On the other hand, as shown in Figure 2 (f), while the catalytic metal palladium is supplemented to the antenna portion (A), a small amount of the catalytic metal palladium also on a part of the peripheral irregularities (2) in the peripheral portion (P) (4) is adsorbed.

이때, 상기 제2촉매흡착단계(S80)는 물 999.6~999.9g/L, 염화파라듐(PdCl2) 0.1~0.4g/L로 조성된 염화파라듐용액 70~90Vol%와, 98%의 염산 10~30Vol%로 조성된 상기 제2촉매흡착용액에 상기 피도금물을 110~130초 침적하여 실시된다.At this time, the second catalyst adsorption step (S80) is a hydrochloric acid of 70 ~ 90Vol% and 98% of a palladium chloride solution composed of 999.6 ~ 999.9g / L water, 0.1 ~ 0.4g / L palladium chloride (PdCl 2 ) It is carried out by immersing the plated object for 110 to 130 seconds in the second catalyst adsorption solution formed at 10 to 30 Vol%.

한편, 제2촉매흡착단계(80)에서는 이미 상기 안테나부(A)에 흡착되어 있는 촉매금속에 파라듐(4)을 흡착시키는 단계로서 제1촉매흡착단계(S50)에서 흡착제 역활을 하도록 사용된 염화제일주석은 이용되지 않는다.On the other hand, in the second catalyst adsorption step (80) is used to act as the adsorbent in the first catalyst adsorption step (S50) as a step of adsorbing the palladium (4) to the catalyst metal already adsorbed to the antenna unit (A). No tin chloride is used.

상기 제2부분에칭단계(S90)는 상기 제2촉매흡착단계(80)에서 상기 주변부(P)에 흡착되는 미량의 촉매금속 파라듐(4)을 제거하면서, 상기 안테나부(A)의 표면 거칠기(roughness)를 감소시키는 단계이다.The second partial etching step S90 removes a trace amount of the catalytic metal palladium 4 adsorbed to the peripheral part P in the second catalyst adsorption step 80, and roughens the surface of the antenna part A. It is a step to reduce roughness.

한편, 상기 제2부분에칭단계(S90)는 물 910~950g/L, 불화암모늄 50~90g/L로 조성된 불화암모늄용액 83~90Vol%와, 98%의 황산 10~17Vol%로 조성된 상기 제2부분에칭용액을 40~70℃로 가열하고 상기 피도금물(C)을 100~120초 침적하여 실시된다.On the other hand, the second partial etching step (S90) is an aqueous ammonium fluoride solution composed of 910 ~ 950g / L water, 50 ~ 90g / L ammonium fluoride 83 ~ 90Vol%, 98% sulfuric acid 10 ~ 17Vol% It is carried out by heating the second partial etching solution to 40 ~ 70 ℃ and immersing the plated (C) for 100 to 120 seconds.

따라서, 상기 제2부분에칭단계(S90) 후 피도금물(C)은 상기 안테나부(A)에만 촉매금속 파라듐(4)이 흡착되어 있는 상태이다.Therefore, after the second partial etching step (S90), the plated object (C) is in a state in which the catalytic metal palladium (4) is adsorbed only to the antenna unit (A).

한편, 전술한 바와 같이 상기 각 공정단계 이후에는 상기 수세세척단계와 동일한 방법으로 세척하는 것이 바람직하다.On the other hand, it is preferable to wash in the same manner as the water washing step after each process step as described above.

상기 제1니켈도금단계(S100)는, 도 2의 (g)에 나타낸 바와 같이, 상기 안테나부(A)에 흡착되어 있는 파라듐(4)을 시드(seed)로 이용하여 제1니켈-붕소(Ni-B)합금막(5)을 무전해도금을 하는 단계이다.In the first nickel plating step (S100), as shown in FIG. 2G, first nickel-boron is used by using palladium 4 adsorbed to the antenna unit A as a seed. It is a step of electroless plating the (Ni-B) alloy film 5.

한편, 상기 제2촉매흡착단계(S80)에서 상기 주변부(P)에 흡착된 파라듐(4)은 상기 제2부분에칭단계(S90)에서 제거되므로, 상기 주변부(P)에는 상기 제1니켈-붕소합금막(5)이 도금되지 않는다.On the other hand, since the palladium (4) adsorbed to the peripheral portion (P) in the second catalyst adsorption step (S80) is removed in the second partial etching step (S90), the first nickel- in the peripheral portion (P) The boron alloy film 5 is not plated.

한편, 본 발명에서는 내후성과 연성이 우수한 니켈-붕소합금이 사용되었으나, 제품의 특성에 따라서 구리, 니켈-인(Ni-P)합금, 크롬(Cr)을 무전해 도금할 수 있다.Meanwhile, in the present invention, nickel-boron alloy having excellent weatherability and ductility is used, but copper, nickel-phosphorus (Ni-P) alloy, and chromium (Cr) may be electroless plated according to the characteristics of the product.

이때, 상기 제1니켈도금단계(S100)는 제1니켈-붕소합금막(5)이 도금되도록 황산니켈 30g/L, 환원제로서 디메틸아민보란(DMAB) 3g/L, 착화제 구연산나트륨 25g/L, 황산 25g/L으로 이루어진 니켈-붕소 도금용액을 이용하는 것이 바람직하다.At this time, the first nickel plating step (S100) is nickel sulfate 30g / L to plate the first nickel-boron alloy film 5, dimethylamine borane (DMAB) 3g / L as a reducing agent, sodium citrate complex 25g / L It is preferable to use a nickel-boron plating solution composed of 25 g / L sulfuric acid.

또한, 상기 니켈-붕소 도금용액은 pH 6~8, 50~65℃를 유지하는 것이 바람직하며, 상기 제1니켈-붕소합금막(5)의 두께를 0.5~1㎛로 형성하여 합성수지와 도금막 사이의 밀착력을 증가시킨다.In addition, the nickel-boron plating solution is preferably maintained at a pH of 6 ~ 8, 50 ~ 65 ℃, the thickness of the first nickel-boron alloy film (5) by forming a thickness of 0.5 ~ 1㎛ synthetic resin and plating film To increase the adhesion between.

다음, 상기 수세세척단계와 동일한 수세세척을 실시하고, 상기 니켈-붕소 도금용액 내에서 석출되어 미처 도금되지 않고 상기 피도금물(C)의 표면에 붙어 있는 니켈금속 알갱이가 제거되도록 초음파를 이용한 수세세척을 하는 것이 바람직하다.Next, washing with water is performed in the same manner as washing with water, and washing with ultrasonic waves is performed to remove nickel metal grains deposited on the surface of the plated material C without being plated and precipitated in the nickel-boron plating solution. It is preferable to wash.

상기 안테나부(A)의 전도성이 증가되도록 상기 제1니켈도금단계(S100)에서 도금된 제1니켈-붕소합금막(5)의 상면에 구리막(6)을 무전해 도금하는 구리도금단계(S110)가 더 포함된다.Copper plating step of electroless plating the copper film (6) on the upper surface of the first nickel-boron alloy film (5) plated in the first nickel plating step (S100) to increase the conductivity of the antenna unit (A) ( S110) is further included.

한편, 상기 구리도금단계(S110)는 구리농도 2.5 ~ 3 g/L, 수산화나트륨 8 ~ 9g/L, 포르마린 3 ~ 3.8g/L, EDTA 30 ~ 35g/L 도금용액에 온도 45 ~ 55℃에서 2 ~ 5분간 무전해 도금하는 것이 바람직하다.On the other hand, the copper plating step (S110) is a copper concentration of 2.5 ~ 3 g / L, sodium hydroxide 8 ~ 9g / L, formalin 3 ~ 3.8g / L, EDTA 30 ~ 35g / L plating solution at a temperature of 45 ~ 55 ℃ Electroless plating is preferred for 2 to 5 minutes.

또한, 상기 구리막(6)의 두께는 전도성이 증가되어 제품의 전기적 특성이 향상되도록 10~40㎛로 생성하는 것이 바람직하다.In addition, the thickness of the copper film 6 is preferably generated in 10 ~ 40㎛ to increase the electrical properties of the product to increase the conductivity.

다음, 상기 주변부(P)에 미세하게 도금된 상기 제1니켈-붕소합금막(5)과 구리막(6)이 제거되도록 제3부분에칭단계(S120)가 더 포함될 수 있다.Next, a third partial etching step S120 may be further included to remove the first nickel-boron alloy film 5 and the copper film 6 which are finely plated on the peripheral portion P. FIG.

이때, 상기 제3부분에칭단계(S120)는 물 90~92Vol%와 98%의 황산 8~10Vol%로 조성된 제3부분에칭용액을 40~50℃로 가열하고, 상기 피도금물(C)을 50~60초 침적하여 상기 주변부(P)에 미세하게 도금된 제1니켈-붕소합금막(5)과 구리막(6)을 제거한다.At this time, the third partial etching step (S120) is heated to 40 ~ 50 ℃ the third partial etching solution composed of 90 ~ 92Vol% of water and 98% sulfuric acid 8 ~ 10Vol%, the plated material (C) Immersed for 50 to 60 seconds to remove the first nickel-boron alloy film 5 and the copper film 6 finely plated on the peripheral portion P.

한편, 상기 무전해도금된 구리막(6)은 전기 전도성은 우수하나 연성이 크므로 사용시 또는 취급시 표면이 긁히거나 벗겨질 수 있으므로 상기 구리막(6)의 상면에 구리 보다 경도 큰 제2니켈-붕소합금막(7)을 도금하는 것이 바람직하다.On the other hand, the electroless plated copper film 6 is excellent in electrical conductivity but has a high ductility, so that the surface may be scratched or peeled off during use or handling, so that the second nickel having a hardness higher than that of copper on the upper surface of the copper film 6 It is preferable to plate the boron alloy film 7.

본 발명에서는 상기 구리막(6)과 구리막(6)의 상면에 도금되는 제2니켈-붕소합금막(7)의 밀착력이 향상되도록 제3촉매흡착단계(S130)가 더 포함된다.In the present invention, a third catalyst adsorption step S130 is further included to improve adhesion between the copper film 6 and the second nickel-boron alloy film 7 which is plated on the upper surface of the copper film 6.

상기 제3촉매흡착단계(S130)는 상기 구리도금단계(S110)에서 무전해 도금된 구리막(6)의 상면에 촉매금속 파라듐(4)을 흡착시키는 단계이다.The third catalyst adsorption step (S130) is a step of adsorbing the catalytic metal palladium (4) on the upper surface of the electroless plated copper film (6) in the copper plating step (S110).

이때, 상기 제3촉매흡착단계(S130)는 0.01~0.02g/L의 염화파라듐용액 99.7~99.9Vol%와, 98%의 염산 0.1~0.3Vol%로 조성되어 pH 2~4인 제2촉매흡착용액에 20~30℃에서, 5~10초간 침적하여 촉매금속 파라듐(4)을 상기 구리막(6)의 상면에 흡착시킨다. At this time, the third catalyst adsorption step (S130) is composed of 99.7 ~ 99.9 Vol% of 0.01 ~ 0.02 g / L palladium chloride solution, 0.1 ~ 0.3 Vol% of 98% hydrochloric acid, the second catalyst of pH 2-4 The catalyst metal palladium (4) is adsorbed on the upper surface of the copper film (6) by immersing the adsorption solution at 20 to 30 ° C. for 5 to 10 seconds.

한편, 상기 제3촉매흡착단계(S130)는 금속인 구리막(6)에 상기 촉매금속 파라듐(4)을 직접 흡착시키는 것이 가능하므로, 상기 제1촉매흡착단계(S50)에서 흡착제로 사용된 제일염화주석은 사용되지 않는다.On the other hand, the third catalyst adsorption step (S130) is capable of directly adsorbing the catalytic metal palladium (4) to the copper film (6) that is a metal, it was used as an adsorbent in the first catalyst adsorption step (S50) Tetrachloride is not used.

다음, 상기 수세세척단계와 동일한 수세세척을 하고, 상기 구리 도금용액에서 석출되어 미처 도금되지 않은 상태로 상기 피도금물(C)의 표면에 붙어 있는 구리 알갱이가 제거되도록 초음파를 이용한 수세세척을 하는 것이 바람직하다.Next, the same washing with the washing step, washing with water using ultrasonic waves to remove the copper grains deposited on the surface of the plated material (C) without being plated and precipitated in the copper plating solution. It is preferable.

상기 구리막(6)의 상면에 제2니켈-붕소합금막(7)을 무전해 도금하는 제2니켈도금단계(S140)가 더 포함된다.A second nickel plating step (S140) of electroless plating the second nickel-boron alloy film 7 on the upper surface of the copper film 6 is further included.

이때, 상기 제2니켈도금단계(S140)는 상기 구리막(6)이 보호되도록, 구리막(6)의 상면에 경도 큰 제2니켈-붕소합금막(7)을 도금하는 단계로서, 상기 제1니켈도금단계(S100)와 동일하게 조성된 니켈-붕소합금 도금용액을 사용하는 것이 바람직하며, 도금두께는 1~4㎛가 바람직하다.In this case, the second nickel plating step (S140) is a step of plating a second nickel-boron alloy film 7 having a high hardness on the upper surface of the copper film 6 so that the copper film 6 is protected. It is preferable to use a nickel-boron alloy plating solution prepared in the same manner as in the nickel plating step (S100), and the plating thickness is preferably 1 to 4 μm.

한편, 상기 제2니켈도금단계(S140) 후 상기 피도금물(C)은, 도 2의 (h)에 나타낸 바와 같이, 상기 안테나부(A)는 제1니켈-붕소합금막(5),구리막(6), 제2니켈-붕소합금막(7)이 적층되어 도금되어 있으며 상기 구리막(6)과 제2니켈-붕소합금막(7) 사이에는 상기 제3촉매흡착단계(S130)에서 흡착된 촉매금속 파라듐(4)이 남아있게 된다.On the other hand, after the second nickel plating step (S140), the plated object (C), as shown in Figure 2 (h), the antenna portion (A) is a first nickel-boron alloy film (5), A copper film 6 and a second nickel-boron alloy film 7 are laminated and plated, and the third catalyst adsorption step S130 is performed between the copper film 6 and the second nickel-boron alloy film 7. The catalytic metal palladium (4) adsorbed at is left.

한편, 상기 제2니켈도금단계(S140)에서 도금된 제2니켈-붕소합금막(7)의 표면이 변색되지 못하도록 변색방지단계(S150)를 더 포함하는 것이 바람직하다.On the other hand, it is preferable to further include a discoloration prevention step (S150) so that the surface of the second nickel-boron alloy film (7) plated in the second nickel plating step (S140) is not discolored.

이때, 상기 변색방지단계는 물 90~92Vol%, 소듐글루코네이트(Sodium Gluconate) 8~10Vol%로 조성되어 45~55℃로 가열된 용액에 상기 피도금물을 1분간 침적하여 실시될 수 있다.At this time, the discoloration prevention step may be carried out by immersing the plated object for 1 minute in a solution heated to 45 ~ 55 ℃ composed of 90 ~ 92Vol% of water, 8 ~ 10Vol% of sodium gluconate (Sodium Gluconate).

본 발명은 상술한 특정의 바람직한 실시 예에 한정되지 아니하며, 청구범위에서 청구하는 본 발명의 요지를 벗어남이 없이 당해 발명이 속하는 기술분야에서 통상의 지식을 가진 자라면 누구든지 다양한 변형실시가 가능한 것은 물론이고, 그와 같은 변경은 청구범위 기재의 범위 내에 있게 된다.It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined in the appended claims and their equivalents. Of course, such modifications are within the scope of the claims.

*도면의 주요부분에 대한 부호의 설명*
S10: 레이저활성단계 S20: 탈지단계
S30: 중화단계 S40: 에칭단계
S50: 제1촉매흡착단계 S60: 촉매활성단계
S70: 제1부분에칭단계 S80: 제2촉매흡착단계
S90: 제2부분에칭단계 S100: 제1니켈도금단계
S110: 구리도금단계 S120: 제3부분에칭단계
S130: 제3촉매흡착단계 S140: 제2니켈도금단계
1 : 요철 2 : 주변요철
3 : 파라듐-주석 4 : 파라듐
5 : 제1니켈-붕소합금막 6 : 구리막
7 : 제2니켈-붕소합금막 A : 안테나부
P : 주변부 C : 피도금물
Description of the Related Art [0002]
S10: laser activation step S20: degreasing step
S30: neutralization step S40: etching step
S50: first catalyst adsorption step S60: catalytic activity step
S70: first partial etching step S80: second catalyst adsorption step
S90: second partial etching step S100: first nickel plating step
S110: copper plating step S120: third partial etching step
S130: third catalyst adsorption step S140: second nickel plating step
1: Unevenness 2: Surroundings
3: palladium-tin 4: palladium
5: first nickel-boron alloy film 6: copper film
7: second nickel-boron alloy film A: antenna portion
P: Peripheral C: Plated Object

Claims (9)

모바일기기의 안테나 제조방법에 있어서,
합성수지로 성형된 모바일기기의 케이스 또는 하우징 피도금물(C)의 표면에 레이저를 조사하여 안테나부(A)를 형성하면서 요철(1)을 생성하는 레이저활성단계(S10)와;
상기 안테나부(A)에 형성된 요철(1)의 크기가 증가되도록 산성의 에칭용액을 이용하여 에칭하는 에칭단계(S40)와;
상기 피도금물(C)을 촉매흡착용액에 침적하여 상기 안테나부(A)에 무전해도금이 가능토록 상기 요철(1) 내부에 촉매금속화합물을 흡착시키는 제1촉매흡착단계(S50)와;
상기 피도금물(C)을 산성의 촉매활성용액에 침적하고 산화환원반응을 이용하여 상기 안테나부(A)에 흡착된 촉매금속화합물을 촉매금속으로 변환하는 촉매활성단계(S60)와;
상기 피도금물(C)을 알카리성 제1부분에칭용액에 침적하여 상기 안테나부(A) 이외의 주변부(P)에 흡착된 촉매금속을 제거하는 제1부분에칭단계(S70)와;
상기 피도금물(C)을 제2촉매흡착용액에 침적하여 상기 안테나부(A)의 표면에 촉매금속을 흡착시켜 보충하는 제2촉매흡착단계(S80)와;
상기 피도금물(C)을 제2부분에칭용액에 침적하여 상기 제2촉매흡착단계(S80)에서 상기 주변부(P)에 흡착된 촉매금속을 제거하면서 상기 안테나부(A)의 거칠기(roughness)가 감소되도록 에칭하는 제2부분에칭단계(S90)와;
상기 안테나부(A)에 흡착된 촉매금속을 시드(seed)로서 이용하여 제1니켈-붕소(Ni-B)합금막(5)을 무전해 도금하는 제1니켈도금단계(S100)로; 구성된 것을 특징으로 하는 모바일기기의 안테나 제조방법.
In the antenna manufacturing method of a mobile device,
A laser activation step (S10) of generating unevenness (1) while forming an antenna portion (A) by irradiating a laser on the surface of the case or housing to-be-plated object (C) of the mobile device molded of synthetic resin;
An etching step (S40) of etching using an acidic etching solution so that the size of the unevenness (1) formed in the antenna unit (A) is increased;
A first catalyst adsorption step (S50) of depositing the plated material (C) on a catalyst adsorption solution to adsorb a catalytic metal compound inside the unevenness (1) to allow electroless plating on the antenna unit (A);
A catalytically active step (S60) of depositing the plated material (C) in an acidic catalytically active solution and converting the catalytic metal compound adsorbed to the antenna unit A to a catalytic metal using a redox reaction;
A first partial etching step (S70) of depositing the plated object (C) in an alkaline first partial etching solution to remove the catalytic metal adsorbed on the peripheral portion (P) other than the antenna portion (A);
A second catalyst adsorption step (S80) of depositing the plated material (C) in a second catalyst adsorption solution to adsorb and supplement a catalyst metal on the surface of the antenna unit (A);
The roughness of the antenna portion A is removed by depositing the plated material C on the second partial etching solution while removing the catalytic metal adsorbed to the peripheral portion P in the second catalyst adsorption step S80. A second partial etching step (S90) for etching to reduce the number of parts;
A first nickel plating step (S100) of electroless plating the first nickel-boron (Ni-B) alloy film 5 using the catalyst metal adsorbed to the antenna unit A as a seed; Antenna manufacturing method of a mobile device, characterized in that configured.
제 1 항에 있어서,
상기 안테나부(A)의 표면에 도금된 도금막의 전도성이 증가되도록 상기 제1니켈도금단계(S100)에서 도금된 제1니켈-붕소합금막(5) 상면에 구리막(6)을 무전해 도금하는 구리도금단계(S110)가 더 포함된 것을 특징으로 하는 모바일기기의 안테나 제조방법.
The method of claim 1,
Electroless plating of the copper film (6) on the upper surface of the first nickel-boron alloy film (5) plated in the first nickel plating step (S100) to increase the conductivity of the plating film plated on the surface of the antenna portion (A) Copper plating step (S110) to the antenna manufacturing method of a mobile device, characterized in that it further comprises.
제 2 항에 있어서,
상기 구리도금단계(S110)에서 도금된 구리막(6)의 상면에 촉매금속 파라듐(4)을 흡착시키는 제3촉매흡착단계(S130)와;
상기 구리막(6)의 상면에 제2니켈-붕소합금막(7)을 무전해 도금하는 제2니켈도금단계(S140)가 더 포함된 것을 특징으로 하는 모바일기기의 안테나 제조방법.
The method of claim 2,
A third catalyst adsorption step (S130) of adsorbing the catalytic metal palladium (4) on the upper surface of the copper film (6) plated in the copper plating step (S110);
The second nickel plating step (S140) of electroless plating the second nickel-boron alloy film (7) on the upper surface of the copper film (6) further comprises an antenna manufacturing method of a mobile device.
제 1 항에 있어서,
상기 에칭단계(S40)의 에칭용액은 황산 10~15Vol%, 물 85~90Vol%로 조성되고 50~60℃로 가열된 것을 특징으로 하는 모바일기기의 안테나 제조방법.
The method of claim 1,
The etching solution of the etching step (S40) is 10 to 15% by volume of sulfuric acid, 85 to 90% by volume of water, the antenna manufacturing method of a mobile device, characterized in that heated to 50 ~ 60 ℃.
제 1 항에 있어서,
상기 촉매활성단계(S60)의 촉매활성용액은 98%의 황산 4~8Vol%, 물 92~96Vol%의 혼합으로 조성된 것을 특징으로 하는 모바일기기의 안테나 제조방법.
The method of claim 1,
The catalyst active solution of the catalytic activity step (S60) is a method of manufacturing an antenna of a mobile device, characterized in that the composition of 98% sulfuric acid 4 ~ 8Vol%, water 92 ~ 96Vol% mixture.
제 1 항에 있어서,
상기 제1부분에칭단계(S70)의 제1부분에칭용액은 물 900~950g/L, 불화암모늄 50~100g/L로 조성되고, 40~70℃로 가열된 것을 특징으로 하는 모바일기기의 안테나 제조방법.
The method of claim 1,
The first partial etching solution of the first partial etching step (S70) is water 900 ~ 950g / L, ammonium fluoride 50 ~ 100g / L composition, the antenna manufacturing of the mobile device, characterized in that heated to 40 ~ 70 ℃ Way.
제 1 항에 있어서,
상기 제2촉매흡착단계(S80)의 제2촉매흡착용액은 물 999.6~999.9g/L, 염화파라듐(PdCl2) 0.1~0.4g/L로 조성된 염화파라듐용액 70~90Vol%와, 98%의 염산 10~30Vol%로 조성된 것을 특징으로 하는 모바일기기의 안테나 제조방법.
The method of claim 1,
The second catalyst adsorption solution of the second catalyst adsorption step (S80) is 70 to 90 vol% of a palladium chloride solution composed of 999.6 to 999.9 g / L of water and 0.1 to 0.4 g / L of palladium chloride (PdCl 2 ), Antenna manufacturing method of a mobile device, characterized in that the composition of 98% hydrochloric acid 10 ~ 30Vol%.
제 1 항에 있어서,
상기 제2부분에칭용액은 물 910~950g/L, 불화암모늄 50~90g/L로 조성된 불화암모늄용액 83~90Vol%와 98%의 황산 10~17Vol%로 조성되고, 40~70℃로 가열된 것을 특징으로 하는 모바일기기의 안테나 제조방법.
The method of claim 1,
The second partial etching solution is composed of 83 to 90 Vol% of ammonium fluoride solution and 10 to 17 Vol% of 98% sulfuric acid composed of water 910 to 950 g / L, ammonium fluoride 50 to 90 g / L, and heated to 40 to 70 ° C. Antenna manufacturing method of a mobile device, characterized in that the.
제 1 항 내지 제 8 항 중 어느 한 항의 제조방법에 따라 제조된 것을 특징으로 하는 모바일기기의 안테나.An antenna of a mobile device, which is manufactured according to the method of any one of claims 1 to 8.
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KR20150071809A (en) * 2013-12-18 2015-06-29 (주)디에이케이코리아 A method for forming metal pattern on synthetic resin
KR101534796B1 (en) * 2013-10-02 2015-07-08 김용식 The Antenna of manufacture method using Plastic platting solution
KR101557276B1 (en) * 2014-08-11 2015-10-07 칠성산업 주식회사 Antenna for mobile device and the manufacturing method thereof
KR101570641B1 (en) * 2015-05-18 2015-11-20 (주)대영케이티엑스 Manufacturing method of LDP type vehicle antenna for direct-soldering to PCB
KR101608220B1 (en) 2014-01-20 2016-04-01 주식회사 부광피엘 Method for metal plating on synthetic resin product
CN106532240A (en) * 2016-12-26 2017-03-22 青岛伟林电子有限公司 Mobile phone antenna and electroless plating technology thereof
KR20190086215A (en) * 2018-01-12 2019-07-22 주식회사 엠에스씨 Micro circuit plating method on laser direct molding injection molding for automotive parts
KR102159372B1 (en) * 2019-08-23 2020-09-24 (주)파트론 A wireless communication device including an antenna
KR102159370B1 (en) * 2019-08-23 2020-09-24 (주)파트론 Antenna package
WO2021040225A1 (en) * 2019-08-23 2021-03-04 주식회사 파트론 Method for producing antenna package

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US10344385B2 (en) 2013-08-09 2019-07-09 Lg Chem, Ltd. Method for forming conductive pattern by direct radiation of electromagnetic wave, and resin structure having conductive pattern thereon
CN105474331A (en) * 2013-08-09 2016-04-06 Lg化学株式会社 Method of forming conductive pattern through direct irradiation of electromagnetic waves, and resin structure having conductive pattern
CN105474330A (en) * 2013-08-09 2016-04-06 Lg化学株式会社 Method of forming conductive pattern through direct irradiation of electromagnetic waves, and resin structure having conductive pattern
WO2015020332A1 (en) * 2013-08-09 2015-02-12 주식회사 엘지화학 Method of forming conductive pattern through direct irradiation of electromagnetic waves, and resin structure having conductive pattern
KR101831885B1 (en) * 2013-08-09 2018-02-23 주식회사 엘지화학 Method for forming conductive pattern by direct radiation of electromagnetic wave, and resin structure having conductive pattern thereon
KR101534796B1 (en) * 2013-10-02 2015-07-08 김용식 The Antenna of manufacture method using Plastic platting solution
KR20150071809A (en) * 2013-12-18 2015-06-29 (주)디에이케이코리아 A method for forming metal pattern on synthetic resin
KR101583007B1 (en) * 2013-12-18 2016-01-07 주식회사 디에이케이코리아 A method for forming metal pattern on synthetic resin
KR101608220B1 (en) 2014-01-20 2016-04-01 주식회사 부광피엘 Method for metal plating on synthetic resin product
KR101557276B1 (en) * 2014-08-11 2015-10-07 칠성산업 주식회사 Antenna for mobile device and the manufacturing method thereof
KR101509473B1 (en) 2014-12-19 2015-04-09 (주) 우진 더블유.티.피. Synthetic Resin Electro-less Intenna Plating Method and Rear Case thereof
KR101570641B1 (en) * 2015-05-18 2015-11-20 (주)대영케이티엑스 Manufacturing method of LDP type vehicle antenna for direct-soldering to PCB
CN106532240A (en) * 2016-12-26 2017-03-22 青岛伟林电子有限公司 Mobile phone antenna and electroless plating technology thereof
CN106532240B (en) * 2016-12-26 2023-09-26 青岛伟林电子有限公司 Mobile phone antenna and chemical plating process thereof
KR20190086215A (en) * 2018-01-12 2019-07-22 주식회사 엠에스씨 Micro circuit plating method on laser direct molding injection molding for automotive parts
KR102031916B1 (en) * 2018-01-12 2019-10-14 (주)엠에스씨 Micro circuit plating method on laser direct molding injection molding for automotive parts
KR102159372B1 (en) * 2019-08-23 2020-09-24 (주)파트론 A wireless communication device including an antenna
KR102159370B1 (en) * 2019-08-23 2020-09-24 (주)파트론 Antenna package
WO2021040226A1 (en) * 2019-08-23 2021-03-04 주식회사 파트론 Antenna package
WO2021040225A1 (en) * 2019-08-23 2021-03-04 주식회사 파트론 Method for producing antenna package
WO2021040221A1 (en) * 2019-08-23 2021-03-04 주식회사 파트론 Wireless communication device having antenna

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