KR101241922B1 - 통합 가스 배합 장치 및 방법 - Google Patents
통합 가스 배합 장치 및 방법 Download PDFInfo
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- KR101241922B1 KR101241922B1 KR1020087001735A KR20087001735A KR101241922B1 KR 101241922 B1 KR101241922 B1 KR 101241922B1 KR 1020087001735 A KR1020087001735 A KR 1020087001735A KR 20087001735 A KR20087001735 A KR 20087001735A KR 101241922 B1 KR101241922 B1 KR 101241922B1
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- Prior art keywords
- fluid
- active
- diluent
- gas
- active fluid
- Prior art date
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- 238000000034 method Methods 0.000 title claims description 35
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- 230000008569 process Effects 0.000 title claims description 14
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- 238000010790 dilution Methods 0.000 claims abstract description 58
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- 238000004377 microelectronic Methods 0.000 claims description 15
- 238000005468 ion implantation Methods 0.000 claims description 14
- 238000003860 storage Methods 0.000 claims description 12
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical group [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims description 11
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 10
- 239000000376 reactant Substances 0.000 claims description 10
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 8
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 8
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000010897 surface acoustic wave method Methods 0.000 claims description 6
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 4
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 4
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- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 claims description 4
- 238000002716 delivery method Methods 0.000 claims description 4
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 claims description 4
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- 238000012806 monitoring device Methods 0.000 claims description 4
- -1 pentafluoromethane Chemical compound 0.000 claims description 4
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 4
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- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
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- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 2
- 239000004254 Ammonium phosphate Substances 0.000 claims description 2
- 229910015900 BF3 Inorganic materials 0.000 claims description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 2
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- 235000019289 ammonium phosphates Nutrition 0.000 claims description 2
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- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
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- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 claims description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 claims description 2
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- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims description 2
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- QYSGYZVSCZSLHT-UHFFFAOYSA-N octafluoropropane Chemical compound FC(F)(F)C(F)(F)C(F)(F)F QYSGYZVSCZSLHT-UHFFFAOYSA-N 0.000 claims description 2
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- 239000001294 propane Substances 0.000 claims description 2
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- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 2
- 239000005052 trichlorosilane Substances 0.000 claims description 2
- 238000001179 sorption measurement Methods 0.000 claims 3
- 238000011144 upstream manufacturing Methods 0.000 claims 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 2
- QMMFVYPAHWMCMS-UHFFFAOYSA-N Dimethyl sulfide Chemical compound CSC QMMFVYPAHWMCMS-UHFFFAOYSA-N 0.000 claims 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims 1
- 230000000779 depleting effect Effects 0.000 claims 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 claims 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C5/00—Methods or apparatus for filling containers with liquefied, solidified, or compressed gases under pressures
- F17C5/06—Methods or apparatus for filling containers with liquefied, solidified, or compressed gases under pressures for filling with compressed gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2225—Diffusion sources
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
- B01F23/10—Mixing gases with gases
- B01F23/19—Mixing systems, i.e. flow charts or diagrams; Arrangements, e.g. comprising controlling means
- B01F23/191—Mixing systems, i.e. flow charts or diagrams; Arrangements, e.g. comprising controlling means characterised by the construction of the controlling means
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- B01F35/21—Measuring
- B01F35/213—Measuring of the properties of the mixtures, e.g. temperature, density or colour
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B01F35/21—Measuring
- B01F35/2132—Concentration, pH, pOH, p(ION) or oxygen-demand
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- B01F35/2202—Controlling the mixing process by feed-back, i.e. a measured parameter of the mixture is measured, compared with the set-value and the feed values are corrected
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- B01F35/83—Forming a predetermined ratio of the substances to be mixed by controlling the ratio of two or more flows, e.g. using flow sensing or flow controlling devices
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- F17C13/00—Details of vessels or of the filling or discharging of vessels
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- F17C13/00—Details of vessels or of the filling or discharging of vessels
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- F17C13/025—Special adaptations of indicating, measuring, or monitoring equipment having the pressure as the parameter
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C7/00—Methods or apparatus for discharging liquefied, solidified, or compressed gases from pressure vessels, not covered by another subclass
- F17C7/02—Discharging liquefied gases
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- G—PHYSICS
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- G05D11/02—Controlling ratio of two or more flows of fluid or fluent material
- G05D11/13—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means
- G05D11/131—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means by measuring the values related to the quantity of the individual components
- G05D11/132—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means by measuring the values related to the quantity of the individual components by controlling the flow of the individual components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
Description
Claims (24)
- (i) 활성 유체를 수용한 활성 유체 공급원과 (ii) 희석제 유체를 수용한 희석제 유체 공급원을 결합하여 희석된 유체를 급송하는 시스템으로서,활성 유체와 희석제 유체 중 하나를 분배하도록 된 유체 유동 계측 장치;활성 유체와 희석제 유체를 혼합하여 희석된 활성 유체 혼합물을 형성하도록 된 혼합기;상기 희석된 활성 유체 혼합물 내에서 활성 유체와 희석제 유체 중 임의의 유체의 농도를 감지하도록 된 모니터;상기 희석된 활성 유체 혼합물 내의 활성 유체와 희석제 유체 중 하나 이상의 유체의 농도를 나타내는 신호를 상기 모니터로부터 수신하고, 이에 응답하여, 상기 희석된 활성 유체 혼합물 내의 활성 유체의 예정된 농도를 달성할 수 있도록 상기 유체 유동 계측 장치를 조절하도록 된 제어부; 및상기 혼합기의 상류측의 유체 유동 라인 내에 배치되어, 활성 유체와 희석제 유체 중 다른 하나의 유체의 압력을 감지 및 제어하여, 상기 혼합기에서 활성 유체와 희석제 유체 중 다른 하나의 유체의 예정된 압력을 유지하도록 구성된 압력 제어부를 포함하는 희석 유체 급송 시스템.
- 제1항에 있어서, 상기 유체 유동 계측 장치는 활성 유체를 분배하도록 되는 것인 희석 유체 급송 시스템.
- 제1항에 있어서, 상기 압력 제어부는 희석제 유체 흐름을 제어하도록 되는 것인 희석 유체 급송 시스템.
- 청구항 4은(는) 설정등록료 납부시 포기되었습니다.제1항에 있어서, 상기 모니터는 상기 희석된 활성 유체 혼합물 내의 희석제 유체의 농도를 감지하도록 되느 것인 희석 유체 급송 시스템.
- 제1항에 있어서, 상기 압력 제어부는 활성 유체 흐름을 제어하도록 되는 것인 희석 유체 급송 시스템.
- 제1항에 있어서, 반도체 또는 마이크로 전자 소자 제조 기구를 포함하는 유체 이용 유닛으로 희석된 활성 유체 혼합물이 흐를 수 있도록 상기 유체 이용 유닛에 결합되는 것인 희석 유체 급송 시스템.
- 제6항에 있어서, 상기 혼합기의 하류측에 배치되어, 상기 유체 이용 유닛에 희석된 활성 유체 혼합물의 예정된 흐름을 제공하도록 된 유동 제어부를 더 포함하는 것인 희석 유체 급송 시스템.
- 청구항 8은(는) 설정등록료 납부시 포기되었습니다.제6항에 있어서, 상기 반도체 또는 마이크로 전자 소자 제조 기구는 이온 주입 기구, 화학적 증착 기구, 에피텍셜 도핑 기구, 에칭 기구 중 임의의 기구를 포함하는 것인 희석 유체 급송 시스템.
- 청구항 9은(는) 설정등록료 납부시 포기되었습니다.제1항에 있어서, 상기 모니터는, 아르신, 포스핀, 수소, 삼플루오르화질소, 암모니아, 질소 산화물, 육플루오르화텅스텐, 염화 수소, 염소, 브롬화수소, 디보란, 메탄, 메탄, 에틸렌, 클로로포름, 프로판, 부탄, 육플루오르화황, 질소, 불소, 플루오르화암모늄, 인산암모늄, 수산화암모늄, 삼플루오르화붕소, 삼염화붕소, 디클로로실란, 게르만, 테트라플루오르메탄, 트리플루오르메탄, 디플루오르메탄, 플루오르화메틸, 헥사플루오르에탄, 펜타플루오르메탄, 퍼플루오르프로판, 옥타플로오르시클로부탄, 일산화질소, 실란, 사염화실리콘, 사플루오르화실리콘, 트리클로로실란, 세렌화수소 및 유기금속 반응물 가스 중 임의의 것을 감지하도록 된 것인 희석 유체 급송 시스템.
- 제1항에 있어서, 상기 모니터는 열전퇴 적외선 분석기(thermopile infrared analyzer)를 포함하는 것인 희석 유체 급송 시스템.
- 청구항 11은(는) 설정등록료 납부시 포기되었습니다.제1항에 있어서, 상기 모니터는, 스펙트로미터(spectrometric)형, 스펙트로스코픽(spectroscopic)형, 전기화학적, 음향적, 열적, 포토미터(photometric)형, 크로마토그래픽(chromatographic)형, 컬러미터(colorimetric)형, 표면 음향파(SAW)형, 포토닉스(photonics)형, 및 플레임(flame) 이온화기 유형의 유체 모니터로 이루어진 군으로부터 선택된 유체 모니터링 장치를 포함하는 것인 희석 유체 급송 시스템.
- 청구항 12은(는) 설정등록료 납부시 포기되었습니다.제1항에 있어서, 상기 유체 유동 계측 장치는, 질량 유량 제어부, 활성 유체 공급원으로부터 활성 유체를 낮은 유량으로 분배하도록 작동 가능한 마이크로-밸브, 및 유동 제어 밸브와 결합된 유량계로 이루어진 군으로부터 선택되는 장치를 포함하는 것인 희석 유체 급송 시스템.
- 청구항 13은(는) 설정등록료 납부시 포기되었습니다.제1항에 있어서, 상기 유체 유동 계측 장치는, 전기 응답식 가변 교축 흐름 오리피스를 포함하는 것인 희석 유체 급송 시스템.
- 청구항 14은(는) 설정등록료 납부시 포기되었습니다.제1항에 있어서, 상기 유체 유동 계측 장치는, 전기 제어식 가변 교축 흐름 오리피스를 포함하며, 상기 모니터는 상기 전기 제어식 가변 교축 흐름 오리피스에 전송되는 제어 신호를 검출하도록 되며, 상기 모니터는 상기 제어 신호가 상기 활성 유체와 희석제 유체 중 하나의 유체와 관련된 공급원의 고갈 상태를 나타내는 값인 경우에 이에 응답하여 상기 활성 유체와 희석제 유체 중 하나의 유체와 관련된 공급원을 이용할 수 없게 하는 것인 희석 유체 급송 시스템.
- 청구항 15은(는) 설정등록료 납부시 포기되었습니다.제1항에 있어서, 상기 활성 유체 공급원은 가스 저장 및 분배 용기를 포함하며, 이 용기는, (A) 활성 가스를 수착에 의해 유지하여 활성 가스가 상기 용기로부터 분배되도록 하기 위해서는 탈착되는 물리적 흡착 매체, 및 (B) 조절기의 설정점에 의해 결정되는 압력으로 상기 용기로부터 활성 가스를 분배하는 내부 배치형 조절기 중 임의의 것을 수용하는 것인 희석 유체 급송 시스템.
- 활성 유체를 수용한 활성 유체 공급원과 희석제 유체를 수용한 희석제 유체 공급원을 이용하여 희석된 유체를 급송하는 방법으로서,상기 활성 유체와 희석제 유체 중 하나의 유체를 관련 유체 공급원으로부터 예정된 유량으로 혼합기에 제어 가능하게 분배하는 단계;상기 활성 유체와 희석제 유체 중 다른 하나의 유체를 상기 혼합기에 분배하되, 상기 혼합기의 상류측의 유체 유동 라인 내에서 상기 활성 유체와 희석제 유체 중 다른 하나의 유체의 압력을 감지 및 제어하여, 상기 혼합기에서 활성 유체와 희석제 유체 중 다른 하나의 유체의 예정된 압력을 유지하도록 하는 것을 포함하는 단계분배된 활성 유체와 분배된 희석제 유체를 혼합하여 희석된 활성 유체 혼합물을 형성하는 단계;상기 희석된 활성 유체 혼합물 내에서의 활성 유체와 희석제 유체 중 적어도 하나의 유체의 농도를 모니터링하고, 이에 응답하여 예정된 유량으로 분배되는 유체의 유량을 조절하여 상기 희석된 활성 유체 혼합물 내의 활성 유체의 예정된 농도를 유지하는 단계; 및유체 이용 공정에서 이용하도록 상기 희석된 활성 유체 혼합물을 분배하는 단계를 포함하는 희석 유체 급송 방법.
- 청구항 17은(는) 설정등록료 납부시 포기되었습니다.제16항에 있어서, 상기 이용은 반도체 제품의 제조를 포함하는 것인 희석 유체 급송 방법.
- 청구항 18은(는) 설정등록료 납부시 포기되었습니다.제16항에 있어서, 상기 활성 유체 공급원은 유체 저장 및 분배 용기를 포함하며, 이 용기는, (A) 활성 유체에 대한 수착성(sorptive affinity)을 갖는 물리적 흡착 매체, 및 (B) 유체 압력 조절기 중 임의의 것을 수용하는 것인 희석 유체 급송 방법.
- 청구항 19은(는) 설정등록료 납부시 포기되었습니다.제16항에 있어서, 모니터링은, 스펙트로미터형, 스펙트로스코픽형, 전기화학적, 음향적, 열적, 포토미터형, 크로마토그래픽형, 컬러미터형, 표면 음향파(SAW)형, 포토닉스형 및 플레임 이온화기 유형의 유체 모니터로 이루어진 군으로부터 선택된 장치를 이용하는 것을 포함하는 것인 희석 유체 급송 방법.
- 제16항에 있어서, 농도의 모니터링은 열전퇴 적외선 검출기를 이용하는 것을 포함하는 것인 희석 유체 급송 방법.
- 청구항 21은(는) 설정등록료 납부시 포기되었습니다.제16항에 있어서, 제어 가능한 분배는 가변 유체 제어 장치에 의해 수행되며, 상기 희석 유체 급송 방법은, 가변 유체 제어 장치의 특성을 모니터링하고, 모니터링된 특성이 상기 활성 유체 공급원 또는 희석제 유체 공급원이 고갈되어감을 나타내는 경우에 이에 응답하여 상기 활성 유체와 희석제 유체 중 임의의 유체의 혼합을 종료하는 것을 포함하는 것인 희석 유체 급송 방법.
- (i) 활성 유체를 수용한 활성 유체 공급원과 (ii) 희석제 유체를 수용한 희석제 유체 공급원을 결합하여 희석된 유체를 급송하는 시스템으로서,활성 유체와 희석제 유체 중 하나를 분배하는 유체 유동 계측 장치;활성 유체와 희석제 유체를 혼합하여 희석된 활성 유체 혼합물을 형성하도록 된 혼합기;상기 희석된 활성 유체 혼합물 내에서 활성 유체와 희석제 유체 중 임의의 유체의 농도를 감지하도록 된 모니터;상기 희석된 활성 유체 혼합물 내의 활성 유체와 희석제 유체 중 하나 이상의 유체의 농도를 나타내는 신호를 상기 모니터로부터 수신하고, 이에 응답하여, 상기 희석된 활성 유체 혼합물 내의 활성 유체의 예정된 농도를 달성할 수 있도록 상기 유체 유동 계측 장치를 조절하도록 된 제어부; 및(I) 상기 혼합기의 상류측의 유체 유동 라인 내에 배치되어, 활성 유체와 희석제 유체 중 다른 하나의 유체의 압력을 감지 및 제어하여, 상기 혼합기에서 활성 유체와 희석제 유체 중 다른 하나의 유체의 예정된 압력을 유지하도록 구성된 압력 제어부와,(II) 상기 활성 유체 공급원과 희석제 유체 공급원 중 적어도 하나가 비워지거나 비워진 상태에 도달하는 때를 결정하고 이에 응답하여 그 유체 공급원(들)이 유체를 분배하지 못하도록 하는 종료 시점 검출기 조립체를 포함하는 희석 유체 급송 시스템.
- 청구항 23은(는) 설정등록료 납부시 포기되었습니다.제22항에 있어서, 상기 유체 유동 계측 장치는, 전기 응답식 가변 교축 흐름 오리피스를 포함하며, 상기 종료 시점 검출기 조립체는 상기 가변 교축 흐름 오리피스로 전송되는 전기 신호를 검출하고 이에 응답하여 활성 유체와 희석제 유체 중 적어도 하나의 유체의 분배를 종료하도록 되는 것인 희석 유체 급송 시스템.
- 삭제
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US20100224264A1 (en) | 2010-09-09 |
TWI552797B (zh) | 2016-10-11 |
KR20080032113A (ko) | 2008-04-14 |
EP1899040A2 (en) | 2008-03-19 |
WO2007002288A2 (en) | 2007-01-04 |
TW200711720A (en) | 2007-04-01 |
JP2008543563A (ja) | 2008-12-04 |
US9666435B2 (en) | 2017-05-30 |
US20130330917A1 (en) | 2013-12-12 |
TWI402098B (zh) | 2013-07-21 |
TW201402203A (zh) | 2014-01-16 |
WO2007002288A3 (en) | 2007-04-05 |
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