KR101206725B1 - Substrate processing apparatus in which buffer insulator is insulted in gap between different potential surfaces - Google Patents

Abstract

The present invention relates to a substrate processing apparatus including a chamber surrounding a reaction space and a power supply means insulated from the chamber, the chamber comprising: a gap formed between the first potential surface and the second potential surface; An insulating material inserted into the gap for insulation and provided with the adjacent ends spaced apart from each other such that a buffer space is formed between the adjacent ends; It relates to a substrate processing apparatus including a buffer insulating material inserted into the buffer space.

According to the present invention, the buffer insulating material is inserted into the buffer space between the insulating material is prevented the reaction gas flow into the buffer space can be prevented to prevent plasma discharge inside the buffer space. Therefore, since unnecessary thin film deposition in the buffer space is prevented, generation of pollutants in the chamber can be greatly reduced, and damage or deterioration of the chamber member and the insulating material can be prevented.

Insulation Material, Shock Absorbing Material

Description

Substrate processing apparatus in which buffer insulator is insulted in gap between different potential surfaces}

1 is a schematic configuration diagram of a general PECVD apparatus

2a to 2c are views showing various types of inserting an insulating material in the gap between the gas distribution plate and the electrode mounting portion;

3 is a view showing a state in which the buffer insulating material is inserted between the insulating material according to an embodiment of the present invention;

4 is a perspective view of a buffer insulating material

5 is a view showing a state in which the inserted buffer insulating material is compressed due to thermal expansion

6 and 7 respectively show another embodiment of the present invention for inserting a cushioning insulating material between insulating materials.

* Description of the symbols for the main parts of the drawings *

13 gas distribution plate 14 plasma electrode

19: electrode mounting portion 20: insulating material

30: buffer space 40: buffer insulating material

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus for processing a wafer or glass (hereinafter, referred to as a substrate) using plasma for the manufacture of a semiconductor device or a flat panel display (FPD). The present invention relates to a substrate processing apparatus for inserting a normal insulating material as well as a buffered insulating material into a gap around a distribution plate.

In general, in order to manufacture a flat panel display device such as a liquid crystal display (LCD), a plasma display panel (PDP), or a semiconductor device, a predetermined circuit pattern is performed by performing a process such as thin film deposition, photolithography, and etching on a substrate as a base material. Etc., and each of these processes is performed in a substrate processing apparatus designed for an optimal environment for the process.

There are many kinds of such substrate processing apparatus, but recently, many apparatuses for performing deposition or etching processes using plasma have been used.

1 is a view showing a general configuration of a plasma enhanced chemical vapor deposition (PECVD) apparatus 10 for depositing a thin film using plasma.

The PECVD apparatus 10 may include a chamber 11 forming a reaction space and maintaining a pressure lower than atmospheric pressure, and placing the substrate s in the chamber 11 and serving as a lower electrode for plasma generation. And a substrate electrode 12, a plasma electrode 14 disposed on the substrate stabilizer 12, and an exhaust port 18 provided on the substrate stabilizer 12.

The substrate support 12 may be moved up and down by a support 12a coupled to the center portion of the lower surface.

The plasma electrode 14 is a portion to which RF power is applied from the RF power source 17 and is usually made of aluminum. A matching circuit 16 for matching an impedance is provided between the RF power source 17 and the plasma electrode 14.

A gas supply pipe 15 is connected to a central portion of the plasma electrode 14, and a gas distribution plate 13 is coupled to a lower portion of the plasma electrode 14 with a gas diffusion space communicating with the gas supply pipe 15 interposed therebetween. .

The gas distribution plate 13 is an aluminum block having a plurality of injection holes, and since the peripheral part is fixed to the lower portion of the plasma electrode 14 and is made of the same material (eg, aluminum) as the plasma electrode 14, the plasma electrode ( It has the same potential as 14) and serves as a practical electrode.

On the other hand, since the chamber 11 is grounded, the chamber 11 must be insulated from the plasma electrode 14 or the gas distribution plate 13 to which RF power is applied.

To this end, the edge of the plasma electrode 14 is mounted on the electrode mounting portion 19 protruding into the chamber from the upper side of the chamber side wall or the side wall, and the electrode mounting portion 19 is made of an insulating material or the electrode mounting portion 19 and the plasma. An insulating material must be interposed between the electrodes 14.

However, due to such an installation structure of the plasma electrode 14 or the gas distribution plate 13, the side of the electrode placement unit 19, the side of the gas distribution plate 13, and the plasma electrode 14 around the gas distribution plate 13. The gap surrounded by is formed.

As described above, the gas distribution plate 13 and the plasma electrode 14 are portions to which RF power is applied, and the electrode placement portion 19 is a portion connected to the sidewall or the upper sidewall of the grounded chamber 11.

Therefore, when RF power is applied to the plasma electrode 14, arcing occurs due to a voltage difference inside the gap or a reaction gas is introduced to generate plasma discharge.

When arcing or plasma discharge is generated in the gap, not only the loss of RF power but also the damage of the gas distribution plate 13 are caused, and a thin film is deposited inside or around the gap to provide a cause of particle generation.

In order to prevent such arcing or plasma discharge, an insulating material 20 is inserted into the gap as shown in FIG. 1.

The insulating material 20 is made of a nonconductor or a material having a very high electrical resistance, and is made of, for example, Teflon, ceramic, engineering plastic, or the like. The thicker the width or thickness of the insulating material 20 is, of course, the higher the insulating effect.

This insulating material 20 is affected by the thermal expansion of the metallic parts installed in the chamber, and therefore must be taken into account when selecting the material.

Therefore, it is very rare to provide an integral type of insulating material 20 inside the gap, and in general, the insulating material 20 is divided into a plurality of pieces, and a buffer space is provided between the insulating materials 20.

In particular, in the case of Teflon, such a buffer space is further required because the amount of heat deformation is much larger than that of aluminum constituting the chamber member.

2A to 2C illustrate various types of buffer spaces 30 formed between the insulating materials 20.

In the type shown in FIG. 2A, the ends of each insulating material 20 face each other in parallel and are spaced apart by a distance d.

In this case, since the gas distribution plate 13 and the grounded electrode mounting unit 19 face each other through the buffer space 30, arcing or plasma discharge occurs inside the buffer space 30 to deteriorate the insulating material 20. In addition, the gas distribution plate 13, there is a problem that results in damage to the chamber member, particle generation due to thin film deposition, and the like.

The type shown in FIG. 2B is provided with recesses 20b and convex portions 20a corresponding to each other at the ends of the adjacent insulating material 20 so that the gas distribution plate 13 and the electrode mounting portion 19 do not directly face each other. It forms, respectively, and forms the said recessed part 20b and the convex part 20a.

However, even in this case, since the buffer space 30 is to be disposed between the insulating materials 20 in consideration of thermal expansion, the convex portion 20a should not be inserted to the bottom of the recess 20b. In addition, a buffer space 30 equal to the interval d is formed between the end portions of both insulating materials 20 except the recessed portion 20b and the convex portion 20a.

In the type shown in FIG. 2C, protrusions 21 are formed at each end of the adjacent insulating material 20 as modified in FIG. 2B, and the protrusions 21 are installed to cross each other.

Even in this case, the two distribution parts 21 intersect each other in consideration of thermal expansion so that the gas distribution plate 13 and the electrode mounting part 19 do not directly face each other, while the gap between the ends of both insulating materials 20 is provided. d buffer space was created.

The type shown in FIGS. 2B and 2C can greatly reduce the risk of direct discharge compared to the type shown in FIG. 2A because the gas distribution plate 13 and the grounded electrode mounting portion 19 do not directly face each other. .

However, even in this case, since the buffer space 30 exists between each insulating material 20, the risk of discharge due to this still remains.

A potential difference exists between the gas distribution plate 13 to which the RF power is applied and the grounded electrode mounting unit 19, and one of the buffer spaces 30 is always exposed to the reaction space inside the chamber. The reaction gas introduced into 30 is discharged by the potential difference so that unwanted plasma is often generated.

As described above, the plasma generated inside the buffer space 30 may cause deterioration of the insulating material 20, damage to the chamber members such as the gas distribution plate 13, particle generation due to thin film deposition, and the like.

The present invention is to solve this problem, by preventing arcing or plasma discharge between the gas distribution plate to which RF power is applied and the electrode mounting portion connected to the chamber to prevent damage to the chamber member or the insulating material and to thin film deposition The purpose is to prevent the occurrence of particles caused by.

The present invention provides a substrate processing apparatus including a chamber surrounding a reaction space and a power supply means insulated from the chamber, in order to achieve the above object, between a first potential surface and a second potential surface inside the chamber. A gap formed in the; An insulating material inserted into the gap for insulation and provided with the adjacent ends spaced apart from each other such that a buffer space is formed between the adjacent ends; Provided is a substrate processing apparatus including a buffer insulating material inserted into the buffer space.

The first potential surface may have the same potential as the chamber, and the second potential surface may have the same potential as the power supply means.

The first potential surface includes an electrode holder protruding from an inner side surface or an upper side of the chamber, and the second potential surface is a portion to which RF power is applied, and a plasma electrode and an edge mounted on the electrode holder. It may include a gas distribution plate coupled to the lower portion of the.

The buffer insulating material may be made of the same material as the insulating material, wherein the buffer insulating material may be made of Teflon or engineering plastics.

The buffer insulating material may have a form in which horizontal portions and vertical portions are alternately formed.

Protruding portions may be formed to intersect with each other at both ends of the insulating material, and the buffer insulating material may be installed at the side portions of the respective protruding portions.

Concave portions or convex portions corresponding to each other may be formed at both adjacent ends of the insulating material, and the cushioning insulating material may be provided at the side portions of the concave portions.

Two adjacent ends of the insulating material may be parallel to each other, and the buffer insulating material may be provided between both ends of the insulating material.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiment of the present invention is to insulate the two potential surfaces generated inside the substrate processing apparatus more completely from each other, and the gas distribution plate or the structure of the plasma electrode is not particularly limited.

However, in the present specification, for convenience of description, the electrode mounting portion 19 protrudes from the upper side of the chamber side wall or the side wall as shown in FIG. An example of a substrate processing apparatus in which an edge is placed and the gas distribution plate 13 is coupled to the lower portion of the plasma electrode 14 while being electrically connected to the plasma electrode 14 will be described.

In particular, the embodiment of the present invention is characterized in that the buffer insulating material 40 is inserted between the two insulating materials 20 as shown in FIG.

The insulating material 20 and the buffer insulating material 40 insulate the first potential surface having the same potential as the chamber 11 and the second potential surface having the same potential as the gas distribution plate 13 and the plasma electrode 14. Do it.

To this end, the insulating material 20 and the buffer insulating material 40 are inserted into a gap formed around the gas distribution plate 13.

The buffer insulating material 40 may be manufactured in various forms, but since the buffer insulating material 40 may be contracted by an external pressure, the horizontal portion 32 and the vertical portion 34 alternately as shown in FIG. 4 in the embodiment of the present invention. Propose a continuous form. Of course, the shape of the buffer insulating material 40 is not limited thereto.

The buffer insulating material 40 should be an insulating material and a material having elasticity, and more preferably manufactured from the same material as the insulating material 20. Therefore, it can be made of a material such as engineering plastics, such as PTFE (Polytetrafluoroethylene), Teflon.

When the buffer insulating material 40 is inserted into the buffer space between the insulating materials 20, the inflow of the reaction gas into the buffer space is greatly reduced, thereby preventing plasma discharge in the buffer space.

Therefore, since unnecessary thin film deposition in the buffer space is prevented, generation of pollutants in the chamber can be greatly reduced, and damage or deterioration of the chamber member and the insulating material can be prevented.

The buffer insulating material 40 has a shape as shown in FIG. 3 in the absence of external pressure, but when the gap between the insulating materials 20 is narrowed due to thermal expansion, the buffer insulating material 40 is compressed as shown in FIG. 5 to absorb the expansion force. .

In the compressed state of the buffer insulating material 40, since the horizontal portions 32 are in close contact with each other or the gap thereof becomes very narrow, the reaction gas flow into the buffer space is further blocked.

Meanwhile, although FIG. 3 illustrates a form in which the protrusions 21 formed at each end of the adjacent insulating material 20 cross each other, the installation form of the insulating material 20 is not limited thereto.

Thus, for example, when the recessed portions 20b and the convex portions 20a corresponding to each other are formed at the ends of the adjacent insulating material 20, as shown in FIG. 6, both sides and the concave portions 20b of the convex portions 20a are formed. The buffer insulating material 40 may be inserted into the buffer space formed in the inside of the.

In addition, when the ends of the adjacent insulating material 20 is spaced apart by a certain distance in parallel to each other, as shown in Figure 7, the buffer insulating material 40 must be inserted into the buffer space therebetween.

According to the present invention, the buffer insulating material is inserted into the buffer space between the insulating material is prevented the inflow of the reaction gas into the buffer space can be prevented plasma discharge in the buffer space.

Therefore, since unnecessary thin film deposition in the buffer space is prevented, generation of pollution sources in the chamber can be greatly reduced, and damage or deterioration of the chamber member and the insulating material can be prevented.

Claims (10)

In the substrate processing apparatus including a chamber and a plasma electrode defining a reaction space, A gap formed inside the chamber, the first potential surface forming an equipotential with the chamber and a second potential surface forming an equipotential with the plasma electrode; A plurality of insulating materials inserted into the gap and spaced apart from each other to form a buffer space; And A buffer insulating material inserted into the buffer space; Substrate processing apparatus comprising a. delete The method of claim 1, The first potential surface includes an electrode holder protruding from the inner surface or the upper side of the side of the chamber, And the second potential surface comprises the plasma electrode. The method of claim 1, The buffer insulating material has a substrate processing apparatus, characterized in that it has elasticity capable of expansion and contraction in accordance with the external pressure. 5. The method of claim 4, And a gas distribution plate coupled to the plasma electrode, wherein the gas distribution plate forms the second potential surface. The method of claim 1, And the buffer insulating material includes a plurality of horizontal portions and a plurality of vertical portions alternately connecting the plurality of horizontal portions. The method of claim 1, Substrates intersecting each other are formed at each of both ends of the plurality of insulating materials adjacent to each other, and the buffer insulating material is formed on the side of the projection. The method of claim 1, Substrates and convex portions are formed at both ends of the plurality of insulating materials adjacent to each other, and the buffer insulating material is provided on the side of the convex portion. The method of claim 1, Both ends of the plurality of insulating materials adjacent to each other are parallel to the spaced apart from each other, the buffer insulating material is disposed between the both ends of the plurality of insulating materials. The method of claim 6, The buffer insulating material is a substrate processing apparatus, characterized in that the interval between the plurality of horizontal portion changes according to the external pressure.

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