KR101192773B1 - Method For Fabricating Liquid Crystal Display Device - Google Patents
Method For Fabricating Liquid Crystal Display Device Download PDFInfo
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- KR101192773B1 KR101192773B1 KR1020050134413A KR20050134413A KR101192773B1 KR 101192773 B1 KR101192773 B1 KR 101192773B1 KR 1020050134413 A KR1020050134413 A KR 1020050134413A KR 20050134413 A KR20050134413 A KR 20050134413A KR 101192773 B1 KR101192773 B1 KR 101192773B1
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 90
- 239000000565 sealant Substances 0.000 claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 claims abstract description 19
- 239000010409 thin film Substances 0.000 claims abstract description 8
- 239000011159 matrix material Substances 0.000 claims abstract description 7
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 125000006850 spacer group Chemical group 0.000 claims description 9
- 229920001187 thermosetting polymer Polymers 0.000 claims description 8
- 229920005989 resin Polymers 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 6
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 239000003795 chemical substances by application Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 210000004027 cell Anatomy 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 210000002858 crystal cell Anatomy 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920005575 poly(amic acid) Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009172 bursting Effects 0.000 description 1
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- KUAZQDVKQLNFPE-UHFFFAOYSA-N thiram Chemical compound CN(C)C(=S)SSC(=S)N(C)C KUAZQDVKQLNFPE-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
- G02F1/133519—Overcoatings
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136222—Colour filters incorporated in the active matrix substrate
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
Abstract
본 발명은 레이저를 이용하여 씨일제가 형성되는 기판 가장자리의 오버코트층을 용이하게 제거하여 씨일제와 기판을 직접적으로 접착시킴으로써 씨일제 터짐 불량을 제거하고자 하는 액정표시소자의 제조방법에 관한 것으로서, 특히 제 1 ,제 2 기판을 준비하는 단계와, 상기 제 1 기판 상에 게이트 배선 및 데이터 배선을 교차하여 화소를 정의하고 각 화소 내에 박막트랜지스터 및 화소전극을 형성하는 단계와, 상기 제 2 기판 상에 블랙 매트릭스 및 컬러필터층을 형성하는 단계와, 상기 컬러필터층을 포함한 전면에 오버코트층을 형성하는 단계와, 상기 제 2 기판 가장자리의 오버코트층에 대해 레이저를 조사하여 오버코트층을 제거하는 단계와, 상기 오버코트층이 제거된 기판 가장자리에 씨일제를 형성하는 단계와, 상기 제 1 ,제 2 기판을 대향합착하고 그 사이에 액정층을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a liquid crystal display device, which is intended to remove defects in sealant by directly removing the overcoat layer at the edge of the substrate on which the sealant is formed using a laser and directly bonding the sealant and the substrate. Preparing a first and a second substrate, defining a pixel by crossing a gate wiring and a data wiring on the first substrate, and forming a thin film transistor and a pixel electrode in each pixel, and on the second substrate. Forming a black matrix and color filter layer, forming an overcoat layer on the entire surface including the color filter layer, irradiating a laser to the overcoat layer on the edge of the second substrate, and removing the overcoat layer; Forming a sealant at the edge of the substrate from which the layer is removed, and opposing the first and second substrates. The high and forming a liquid crystal layer therebetween characterized by comprising.
오버코트층, 씨일제, 레이저 Overcoat layer, sealant, laser
Description
도 1은 종래 기술에 의한 액정표시소자 제조방법의 순서를 나타낸 블록도.1 is a block diagram showing a procedure of a liquid crystal display device manufacturing method according to the prior art.
도 2a 및 도 2b는 종래 기술에 의한 액정표시소자의 제조방법을 나타낸 공정단면도.2A and 2B are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to the prior art;
도 3은 본 발명에 의한 액정표시소자의 단면도.3 is a cross-sectional view of a liquid crystal display device according to the present invention.
도 4a 내지 도 4d는 본 발명에 의한 액정표시소자의 제조방법을 나타낸 공정단면도.4A to 4D are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to the present invention.
*도면의 주요 부분에 대한 부호설명* Explanation of symbols on the main parts of the drawings
101 : 제 2 기판 102 : 제 1 기판 101: second substrate 102: first substrate
103 : 액정층 111 : 블랙 매트릭스 103: liquid crystal layer 111: black matrix
112 : 컬러필터층 113 : 오버코트층 112: color filter layer 113: overcoat layer
115 : 스페이서 116 : 씨일제 115: spacer 116: sealant
122 : 화소전극 135 : 데이터 배선 122: pixel electrode 135: data wiring
152 : 레이저 빔 기구 154 : 씨일제 분사기구 152
본 발명은 액정표시소자의 제조방법에 관한 것으로 특히, 레이저를 이용하여 씨일제가 형성되는 기판 가장자리의 오버코트층을 용이하게 제거하여 씨일제와 기판을 직접적으로 접착시킴으로써 씨일제 터짐 불량을 제거하고자 하는 액정표시소자의 제조방법에 관한 것이다.The present invention relates to a method of manufacturing a liquid crystal display device, and in particular, to remove the defect of sealant by directly removing the overcoat layer at the edge of the substrate on which the sealant is formed by using a laser to directly bond the sealant and the substrate. A method for manufacturing a liquid crystal display device.
근래 고품위 TV(high definition TV) 등의 새로운 첨단 영상기기가 개발됨에 따라 브라운관(CRT) 대신에 액정표시소자(LCD :Liquid Crystal Display), ELD(electro luminescence display), VFD(vacuum fluorescence display), PDP(plasma display panel) 등과 같은 평판표시장치에 대한 연구가 활발히 진행되고 있다.Recently, with the development of new advanced imaging devices such as high definition TVs, liquid crystal displays (LCDs), electro luminescence displays (ELDs), vacuum fluorescence displays (VFDs), and PDPs are used instead of CRTs. Research on flat panel display devices such as plasma display panels is being actively conducted.
그 중에서도 액정표시소자는 평판 표시기의 대표적인 기술로써 박형, 저가, 저소비 전력 구동 등의 특징을 가져 랩 톱 컴퓨터(lap top computer)나 포켓 컴퓨터(pocket computer)의 표시 외에 차량 적재용, 칼라 TV의 화상용으로도 그 용도가 급속하게 확대되고 있다. Among them, the liquid crystal display device is a representative technology of a flat panel display, and has characteristics such as thin, low cost, low power consumption, etc. Its use is also rapidly expanding.
이러한 특성을 갖는 액정표시소자는 상부기판인 컬러필터(color filter) 어레이 기판과 하부기판인 TFT(Thin Film Transistor) 어레이 기판이 서로 대향되도록 배치되고, 그 사이에 유전 이방성을 갖는 액정이 형성되는 구조를 가지는 것으로, 화소 선택용 어드레스(address) 배선을 통해 수십 만개의 화소에 부가된 박막트랜지스터(TFT)를 스위칭 동작시켜 해당 화소에 전압을 인가해 주는 방식으로 구동하게 된다. A liquid crystal display device having such characteristics is a structure in which a color filter array substrate as an upper substrate and a TFT (Thin Film Transistor) substrate as a lower substrate are disposed to face each other, and a liquid crystal having dielectric anisotropy is formed therebetween. By driving a thin film transistor (TFT) added to hundreds of thousands of pixels through the pixel selection address wiring to drive a voltage applied to the pixel.
상기와 같은 액정표시소자를 제조하기 위해서는, 크게 트랜지스터 공정, 컬러필터 공정, 씨일제 형성공정, 스페이서 형성공정, 액정주입 공정 등을 수행하여야 한다. In order to manufacture the liquid crystal display device as described above, a transistor process, a color filter process, a sealant forming process, a spacer forming process, a liquid crystal injection process, and the like should be largely performed.
이하에서, 도면을 참고로 하여 구체적으로 살펴보면 다음과 같다. Hereinafter, with reference to the drawings in detail as follows.
도 1은 종래 기술에 의한 액정표시소자 제조방법의 순서를 나타낸 블록도이고, 도 2a 및 도 2b는 종래 기술에 의한 액정표시소자의 제조방법을 나타낸 공정단면도이다.1 is a block diagram showing a procedure of a liquid crystal display device manufacturing method according to the prior art, Figures 2a and 2b is a process cross-sectional view showing a method for manufacturing a liquid crystal display device according to the prior art.
먼저, 트랜지스터 공정(S1)은 제 1 기판 상에 증착(deposition) 및 포토리소그래피(photolithography), 식각(etching) 공정을 반복함으로써 게이트 배선 및 데이터 배선에 의해 정의된 각 화소 영역 내에 박막트랜지스터 및 화소전극을 형성하는 공정이다.First, the transistor process S1 repeats the deposition, photolithography, and etching processes on the first substrate, thereby forming a thin film transistor and a pixel electrode in each pixel region defined by the gate wiring and the data wiring. Forming process.
그리고, 상기 컬러필터 공정(S2)은 제 2 기판 상에 블랙 매트릭스(black matrix)를 형성하고, 그 위에 일정한 순서로 배열되어 색상을 구현하는 적(Red), 녹(Green), 청(Blue)의 컬러필터층을 형성한 후, 상기 컬러필터층을 포함한 전면에 공통전극을 형성하는 공정이다. 이때, 상기 컬러필터층의 단차를 보상하고 컬러필터층의 물질이 액정층으로 확산되는 것을 방지하기 위해서, 상기 컬러필터층을 포함한 전면에 오버코트층을 더 형성해준다. In addition, the color filter process S2 forms a black matrix on the second substrate, and is arranged in a predetermined order on the second substrate to realize red, green, and blue colors. After the color filter layer is formed, the common electrode is formed on the entire surface including the color filter layer. In this case, an overcoat layer is further formed on the entire surface including the color filter layer to compensate for the step of the color filter layer and to prevent the material of the color filter layer from being diffused into the liquid crystal layer.
상기 오버코트층은 UV 광조사에 의해 경화가 이루어지는 광경화성 오버코트층과 소성로에 인입되어 가열에 의해 경화가 이루어지는 열경화성 오버코트층이 있다. 상기 광경화성 오버코트층은 경화를 위해 전면에 UV를 조사해주고, 상기 열경 화성 오버코트층은 경화를 위해 전면에 열을 가해준다. The overcoat layer includes a photocurable overcoat layer which is cured by UV light irradiation, and a thermosetting overcoat layer which is hardened by heating after being introduced into a firing furnace. The photocurable overcoat layer irradiates UV on the entire surface for curing, and the thermosetting overcoat layer heats the entire surface for curing.
상기 트랜지스터 공정 및 컬러필터 공정을 각각 마친후, 각종 패턴이 구비된 제 1 기판 또는 제 2 기판을 포함한 전면에 액정의 초기배향을 결정하기 위한 배향막을 더 형성하기도 한다. After completing the transistor process and the color filter process, an alignment layer for determining the initial alignment of the liquid crystal may be further formed on the entire surface including the first substrate or the second substrate provided with various patterns.
상기에서와 같이, 트랜지스터 공정 및 컬러필터 공정을 수행한 다음에는, 기판 사이의 셀 갭을 유지하기 위해 제 1 기판의 전면에 4~5㎛의 크기로 제작된 플라스틱 볼(plastic ball)이나 실리카(silica) 구와 같은 볼 스페이서(ball spacer)를 산포하는 스페이서 형성공정(S3)을 수행한다.As described above, after performing the transistor process and the color filter process, a plastic ball or silica (4) having a size of 4 to 5 μm is formed on the front surface of the first substrate to maintain the cell gap between the substrates. A spacer forming step (S3) of dispersing a ball spacer such as a silica sphere is performed.
이어서, 셀 갭을 형성함과 동시에 액정의 누출을 방지하기 위해 상기 제 2 기판의 가장자리에 마이크로 펄(micro pearl) 등을 섞은 씨일제를 액정주입구를 제외한 나머지 영역에 프린팅 방법으로 형성하는 씨일제 형성공정(S4)을 수행한다. Subsequently, in order to form a cell gap and prevent leakage of liquid crystals, a sealant is formed in which a sealant, in which micro pearls or the like is mixed at the edge of the second substrate, is formed in the remaining areas except for the liquid crystal inlet. Step S4 is performed.
계속하여, 볼 스페이서가 형성된 제 2기판과 씨일제가 형성된 제 1 기판을 정렬 마크를 기준으로 자동 정렬한 후 대향 합착시키고, 고온, 고압 하에서 상기 씨일제를 경화시켜 두 기판을 완전히 접착시키는 기판 합착공정(S5)을 수행한다.Subsequently, the second substrate on which the ball spacer is formed and the first substrate on which the sealant is formed are automatically aligned based on the alignment mark, and then bonded to each other, and the substrate is bonded to completely bond the two substrates by curing the sealant under high temperature and high pressure. Step (S5) is performed.
구체적으로, 도 2a에 도시된 바와 같이, 오버코트층(51)이 전면에 형성되어 있는 제 2 기판(52)의 가장자리에 노즐(54)을 이용하여 씨일제(53)를 전사하고, 도 2b에 도시된 바와 같이, 씨일제(53)가 전사된 제 2 기판(52)에 제 1 기판(55)이 대향하도록 한 다음, 두 기판을 합착시킨다. 따라서, 씨일제(53)는 제 1 기판(55)과 오버코트층(51) 사이에 개재되게 된다. Specifically, as shown in FIG. 2A, the
도시하지는 않았으나, 완전히 접착된 상기 두 기판을 필요한 크기로 절단하 기 위해서 기판 표면에 라인을 형성하는 스크라이브 공정과 상기 라인에 충격을 가하여 접착된 기판을 액정셀 단위로 분리하는 브레이크 공정을 더 수행한다. Although not shown, a scribe process of forming a line on the surface of the substrate and a break process of separating the bonded substrate into liquid crystal cell units by applying an impact to the line in order to cut the two fully bonded substrates to a required size. .
마지막으로, 액정셀 공정은 트랜지스터 공정이 완료된 제 1 기판과 컬러필터 공정이 완료된 제 2 기판을 두 기판 사이로 액정주입구를 통하여 액정을 주입하고, 상기 액정주입구를 봉지하여 액정층을 형성하는 액정주입공정(S5)을 수행하여 액정표시소자를 완성한다. Finally, the liquid crystal cell process is a liquid crystal injection process of forming a liquid crystal layer by injecting a liquid crystal through the liquid crystal inlet through the liquid crystal injection hole between the first substrate and the second substrate, the color filter process complete the transistor process is completed (S5) is performed to complete the liquid crystal display device.
그러나, 상기와 같은 종래의 액정표시소자의 제조방법은 다음과 같은 문제점이 있다.However, the conventional manufacturing method of the liquid crystal display device as described above has the following problems.
즉, 컬러필터층을 포함한 기판 전면에 오버코트층을 구비하는 경우, 씨일제가 형성되는 기판 가장자리의 오버코트층이 기판으로부터 필링되고, 씨일제가 오버코트층으로부터 필링되는 문제점이 있었는바, 이것은 무기물과 무기물 사이의 접착력보다 유기물과 무기물 사이의 접착력이 약해지는 특성에 입각하여 씨일제와 오버코트층의 접착력이 약하고 제 2 기판과 오버코트층의 접착력이 서로 약하기 때문이다. That is, when the overcoat layer is provided on the entire surface of the substrate including the color filter layer, there is a problem that the overcoat layer at the edge of the substrate on which the sealant is formed is peeled from the substrate, and the sealant is peeled from the overcoat layer. This is because the adhesion between the sealant and the overcoat layer is weak and the adhesion between the second substrate and the overcoat layer is weak, based on the property that the adhesion between organic and inorganic is weaker than the adhesion between
본 발명은 상기와 같은 문제점을 해결하기 위하여 안출한 것으로, 레이저를 이용하여 씨일제가 형성되는 기판 가장자리의 오버코트층을 용이하게 제거하여 씨일제와 기판을 직접적으로 접착시킴으로써 씨일제 터짐 불량을 제거하고자 하는 액정표시소자의 제조방법을 제공하는데 그 목적이 있다.The present invention has been made in order to solve the above problems, by using a laser to easily remove the overcoat layer on the edge of the substrate on which the sealant is formed to directly seal the sealant and the substrate to remove the defect defect It is an object of the present invention to provide a method for manufacturing a liquid crystal display device.
또한, 본 발명에 의한 액정표시소자의 제조방법의 또다른 목적은, 기판 가장 자리의 오버코트층을 레이저로써 용이하게 제거함으로써 오버코트층 패터닝을 위한 포토식각공정을 추가수행하지 않고자 함에 있다. In addition, another object of the method for manufacturing a liquid crystal display device according to the present invention is to avoid performing a photo-etching process for overcoat layer patterning by easily removing the overcoat layer of the substrate edge with a laser.
상기와 같이 구성되는 본 발명의 액정표시소자의 제조방법은 제 1 ,제 2 기판을 준비하는 단계와, 상기 제 1 기판 상에 게이트 배선 및 데이터 배선을 교차하여 화소를 정의하고 각 화소 내에 박막트랜지스터 및 화소전극을 형성하는 단계와, 상기 제 2 기판 상에 블랙 매트릭스 및 컬러필터층을 형성하는 단계와, 상기 컬러필터층을 포함한 전면에 오버코트층을 형성하는 단계와, 상기 제 2 기판 가장자리의 오버코트층에 대해 레이저를 조사하여 오버코트층을 제거하는 단계와, 상기 오버코트층이 제거된 기판 가장자리에 씨일제를 형성하는 단계와, 상기 제 1 ,제 2 기판을 대향합착하고 그 사이에 액정층을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 한다.In the method of manufacturing the liquid crystal display device of the present invention configured as described above, preparing the first and second substrates, crossing the gate wiring and the data wiring on the first substrate to define a pixel, and a thin film transistor in each pixel And forming a pixel electrode, forming a black matrix and a color filter layer on the second substrate, forming an overcoat layer on the entire surface including the color filter layer, and forming an overcoat layer on the edge of the second substrate. Irradiating a laser to remove the overcoat layer, forming a sealant on the edge of the substrate from which the overcoat layer has been removed, and opposing the first and second substrates to form a liquid crystal layer therebetween. Characterized in that comprises a.
즉, 기판과 오버코트층 사이 또는 오버코트층과 씨일제 사이의 필링 문제를 방지하기 위해 씨일제가 형성되는 기판 가장자리의 오버코트층을 제거하는 것을 특징으로 하는바, 포토식각공정으로 제거하지 않고 레이저를 사용하여 용이하게 제거하는 것을 특징으로 한다. That is, in order to prevent peeling problems between the substrate and the overcoat layer or between the overcoat layer and the sealant, the overcoat layer at the edge of the substrate on which the sealant is formed is removed. The laser is used without removing the photoetch process. It is characterized by easy removal.
이하, 첨부된 도면을 참조하여 본 발명에 의한 액정표시소자의 제조방법을 상세히 설명하면 다음과 같다.Hereinafter, a method of manufacturing a liquid crystal display device according to the present invention will be described in detail with reference to the accompanying drawings.
도 3은 본 발명에 의한 액정표시소자의 단면도이고, 도 4a 내지 도 4d는 본 발명에 의한 액정표시소자의 제조방법을 나타낸 공정단면도이다.3 is a cross-sectional view of a liquid crystal display device according to the present invention, and FIGS. 4A to 4D are process cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to the present invention.
본 발명에 의한 액정표시소자는, 도 3에 도시된 바와 같이, 대향하는 제 1 ,제 2 기판(102,101)과, 액정주입구를 제외하고 상기 제 1 기판(102) 가장자리에 형성되어 두 기판을 접착하는 씨일제(116)와, 상기 제 1 ,제 2 기판(102,101) 사이의 셀 갭과 액정주입구에서의 셀 갭을 유지하기 위한 스페이서(115)와, 상기 제 1 ,제 2 기판 사이에 봉입된 액정층(103)과, 씨일제가 형성되는 기판 가장자리를 제외한 나머지 영역에 형성되는 오버코트층(113)으로 구성된다. 이때, 기판 가장자리의 오버코트층은 레이저 조사에 의해 제거되는 것을 특징으로 한다. As shown in FIG. 3, the liquid crystal display device according to the present invention is formed at the edges of the first and
상기 제 1 기판(102)의 내측면에는 수직 교차하여 화소를 정의하는 데이터 배선(135) 및 게이트 배선(도시하지 않음)과, 두 배선의 교차 지점에 형성되어 각 화소의 온/오프(On/Off)를 결정하는 박막트랜지스터(TFT)와, 상기 공통전극에 대향되어 액정을 구동하기 위한 전압을 인가하는 화소전극(122)이 형성되어 있다. On the inner surface of the
그리고, 제 2 기판(101)의 내측면에는 빛샘을 방지하고 RGB의 혼색을 방지하기 위한 블랙 매트릭스(111)와, 색상을 구현하기 위한 RGB의 컬러필터층(112)과, 상기 컬러필터층을 포함한 전면에 형성되어 단차를 개선하고 표면을 평탄화하는 오버코트층(113)과, 화소전극(122)과 더불어 액정에 전압을 인가해주기 위한 공통전극(도시하지 않음)이 형성되어 있다. In addition, the inner surface of the
이와같이, 본 발명에 의한 오버코트층(113)은 씨일제가 형성되는 부분을 제외한 나머지 영역에 형성되어 씨일제(116)와 제 2 기판(101)이 직접적으로 접착되도록 하는 것을 특징으로 한다. 씨일제와 기판은 무기물로서 서로에 대한 접착력이 강하므로 씨일제 터짐 불량을 제거할 수 있다. As described above, the
상기 제 2 기판(101) 가장자리의 오버코트층은 레이저를 사용하여 제거하는 것을 특징으로 하는바, 오버코트층 패터닝을 위한 별도의 포토식각공정을 수행하지 않는 것을 특징으로 한다. The overcoat layer at the edge of the
구체적으로, 도 4a에 도시된 바와 같이, 블랙 매트릭스 및 컬러필터층이 형성되어 있는 제 2 기판(101) 전면에 스핀-코팅(spin-coating) 방식 또는 롤-코팅(roll-coating) 방식을 이용하여 유기계 물질인 아크릴계 수지를 도포한 후, 용제를 휘발시키기 위해서 핫 챔버(hot chamber) 또는 핫 플레이트(hot plate, 295)에서 경화시켜 오버코트층(113)을 형성한다.Specifically, as shown in FIG. 4A, a spin-coating method or a roll-coating method is used on the entire surface of the
본 발명에 의한 오버코트층은 폴리이미드계 타입의 열경화성 수지를 사용하여 형성한다. The overcoat layer by this invention is formed using the thermosetting resin of a polyimide type.
상기 폴리이미드계 타입의 열경화성 수지는 폴리아믹산(polyamic acid)이 포함된 실리콘 화합물, 에폭시 수지, 에폭시 경화제, 첨가제, 용매를 사용하여 제조되거나 또는, 실리콘 화합물, 폴리아믹산(polyamic acid)이 포함된 에폭시 수지, 에폭시 경화제, 첨가제, 용매를 사용하여 제조된다. The polyimide-based thermosetting resin is prepared using a silicone compound containing polyamic acid, an epoxy resin, an epoxy curing agent, an additive, a solvent, or an epoxy containing a silicone compound and polyamic acid. It is prepared using resins, epoxy curing agents, additives, and solvents.
이러한, 폴리이미계 타입의 열경화성 수지는 일반적인 오버코트층의 열경화공정을 수행하여 용매를 제거하고 혼합물을 서로 가교시키는데, 일예로 전면 도포된 열경화성 수지를 230℃에서 40분 내외로 가열하여 소성시킨다. The polyimide-type thermosetting resin removes a solvent and crosslinks the mixture by performing a thermosetting process of a general overcoat layer. For example, the front-coated thermosetting resin is heated by heating at 230 ° C. for about 40 minutes.
다음, 도 4b에 도시된 바와 같이, 씨일제가 형성될 기판 가장자리의 오버코트층을 제거하기 위해 레이저 빔기구(152)를 이용하여 레이저를 조사한다.Next, as shown in FIG. 4B, the laser is irradiated using the
레이저는 고에너지의 인공 광선으로 오버코트층에 조사하면 열에너지로 변해 오버코트층을 녹이는데, 레이저 세기 및 범위를 잘 선택하여 오버코트층을 녹인다. When the laser is irradiated to the overcoat layer with a high energy artificial ray, the laser turns into thermal energy to melt the overcoat layer. By selecting the laser intensity and range well, the laser melts the overcoat layer.
상기 레이저의 높은 에너지에 의해 기판 가장자리의 오버코트층(113)을 녹인 이후에는, 용제 또는 순수를 이용하여 녹은 오버코트층을 제거한다. After melting the
이후, 도 4c에 도시된 바와 같이, 씨일제 분사기구(154)를 이용하여 오버코트층(113)이 제거된 제 2 기판(101) 가장자리에 접착제 역할을 하는 씨일제(116)를 전사한다. Thereafter, as illustrated in FIG. 4C, the
마지막으로, 도 4d에 도시된 바와 같이, 가장자리에 씨일제(116)가 전사된 제 2 기판(101)과, 스페이서(spacer)(도시하지 않음)를 산포된 제 1 기판(102)을 대향 합착시키고, 액정셀 내부를 진공화한 후 모세관 현상을 이용하여 두 기판 사이에 액정을 주입하고 액정주입구를 봉지하여 원하는 액정표시소자를 완성한다. Finally, as shown in FIG. 4D, the
이로써, 씨일제(116)는 제 1 ,제 2 기판(102,101) 사이에 개재되어 기판과 씨일제가 직접 접촉하게 되므로, 씨일제 터짐 불량이 방지된다. As a result, the sealing
마지막으로, 게이트 배선, 데이터 배선, 박막트랜지스터 및 화소전극이 형성되어 있는 제 1 기판의 가장자리의 액정주입구를 제외한 나머지 영역에 씨일제를 형성하고 상기 스페이서가 프린팅된 제 2 기판을 대향합착한 후, 액정표시소자를 완성한다. Finally, after the sealing agent is formed in the remaining region except for the liquid crystal inlet at the edge of the first substrate on which the gate wiring, the data wiring, the thin film transistor, and the pixel electrode are formed, the second substrate on which the spacer is printed is oppositely bonded. Complete the liquid crystal display device.
한편, 이상에서 설명한 본 발명은 상술한 실시예 및 첨부된 도면에 한정되는 것이 아니고, 본 발명의 기술적 사상을 벗어나지 않는 범위내에서 여러 가지 치환, 변형 및 변경이 가능하다는 것이 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 있어 명백할 것이다.On the other hand, the present invention described above is not limited to the above-described embodiment and the accompanying drawings, it is possible that various substitutions, modifications and changes within the scope without departing from the technical spirit of the present invention. It will be apparent to those of ordinary skill in Esau.
즉, 상기에서는 화소전극이 형성되어 있는 하부기판과 공통전극이 형성되어 있는 상부기판을 대향합착하여 상기 화소전극과 공통전극 사이에 형성되는 수직전계에 의해 액정층을 구동하는 TN 모드에 한정하여 설명하였으나, 이에 한정하지 않고 IPS 모드에도 적용가능하다. IPS 모드는 TN모드와 달리, 하나의 기판에 화소전극과 공통전극을 평행하게 형성하고 그 사이에 형성되는 횡전계에 액정층을 구동하는 것으로, TN 모드에 비해서 시야각이 휠씬 우수한 모드이다.That is, the above description is limited to the TN mode in which the lower substrate on which the pixel electrode is formed and the upper substrate on which the common electrode are formed are opposed to each other to drive the liquid crystal layer by a vertical electric field formed between the pixel electrode and the common electrode. However, the present invention is not limited thereto and can be applied to the IPS mode. Unlike the TN mode, the IPS mode forms a pixel electrode and a common electrode on one substrate in parallel and drives the liquid crystal layer in a transverse electric field formed therebetween, and has a much better viewing angle than the TN mode.
상기와 같은 본 발명의 액정표시소자의 제조방법은 다음과 같은 효과가 있다.The manufacturing method of the liquid crystal display device of the present invention as described above has the following effects.
첫째, 레이저를 이용하여 씨일제가 형성되는 기판 가장자리의 오버코트층을 용이하게 제거하여 씨일제와 기판을 직접적으로 접착시킴으로써 씨일제 터짐 불량이 제거된다. First, the defect of the sealant burst is eliminated by easily removing the overcoat layer at the edge of the substrate on which the sealant is formed using a laser to directly bond the sealant to the substrate.
둘째, 기판 가장자리의 오버코트층을 레이저로써 용이하게 제거함으로써 오버코트층 패터닝을 위한 포토식각공정을 추가수행하지 않아도 되므로 공정이 간소해지고, 고가의 노광 마스크 사용에 의한 공정비용을 저감할 수 있다. Second, by easily removing the overcoat layer at the edge of the substrate with a laser, it is not necessary to perform an additional photo etching process for patterning the overcoat layer, thereby simplifying the process and reducing the process cost by using an expensive exposure mask.
셋째, 씨일제 터짐에 의해 떨어져 나간 씨일제 파편이 액정층을 오염할 수 있는데, 씨일제 터짐이 방지되므로 액정층 오염도 방지할 수 있다. Third, the sealant fragments that fall off by the sealant may contaminate the liquid crystal layer, and thus the sealant may be prevented from bursting, thus preventing the liquid crystal layer contamination.
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| KR102010959B1 (en) * | 2013-06-28 | 2019-08-14 | 엘지디스플레이 주식회사 | Alignment layer patterning method and method of fabricating liquid crystal display device using the same |
| KR102118364B1 (en) * | 2020-03-03 | 2020-06-04 | 주식회사 엘지화학 | Preparation method for light modulating device |
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