KR101132885B1 - Nitride light emitting diode and fabricating method thereof - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a nitride based light emitting diode and a method of manufacturing the same, wherein an oxide layer composed of a plurality of islands is spaced apart from each other on a p-type nitride semiconductor layer, and then the p-type nitride semiconductor layer is not formed. Forming a bonding layer or a transparent electrode made of a metal material on the.

According to the present invention, an electric current flows from the p-electrode through the bonding layer made of a metal material, thereby lowering the contact resistance, thereby making it possible to form an ohmic contact, thereby lowering the operating voltage.

In addition, since the current flowing through the p-electrode is uniformly injected into the active layer through the bonding layer formed on the p-type nitride semiconductor layer, the current spreading effect is increased, thereby improving the luminous efficiency of the device. There is

Contact resistance, transparent electrode, light emitting diode, operating voltage

Description

Nitride light emitting diode and fabrication method

1 is a cross-sectional view of a conventional nitride light emitting diode.

2 is a cross-sectional view showing a first embodiment of the nitride-based light emitting diode of the present invention.

3 is a plan view showing a first embodiment of the nitride-based light emitting diode of the present invention.

4 is a sectional view showing a second embodiment of the nitride-based light emitting diode of the present invention.

Fig. 5 is a sectional view showing a third embodiment of the nitride based light emitting diode of the present invention.

6A to 6F are sectional views showing the manufacturing method of the first embodiment of the nitride light emitting diode of the present invention.

7A to 7E are sectional views showing the manufacturing method of the second embodiment of the nitride-based light emitting diode of the present invention.

8A to 8F are sectional views showing the manufacturing method of the third embodiment of the nitride-based light emitting diode of the present invention.

Explanation of symbols on the main parts of the drawings

100 substrate 110 buffer layer

120: n-type nitride semiconductor layer 130: active layer

140: p-type nitride semiconductor layer 150: oxide layer

160: bonding layer 170: reflecting film

180: p-electrode 190: n-electrode

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device, and more particularly to a nitride based light emitting diode and a method of manufacturing the same.

In general, a light emitting diode (LED) is a kind of semiconductor device that transmits and receives a signal by converting electricity into infrared rays or light using characteristics of a compound semiconductor.

The light emitting diode generates energy with high efficiency at low voltage, so it is very energy-saving.In recent years, the luminance problem, which was the limitation of the light emitting diode, has been greatly improved, and the entire industry including a backlight unit, an electronic board, an indicator, a home appliance, and various automation devices It is used throughout.

Particularly, gallium nitride (GaN) -based light emitting diodes have a broad emission spectrum ranging from ultraviolet rays to infrared rays and are environmentally friendly since they do not contain environmentally harmful substances such as arsenic (As) and mercury (Hg). I get a high response.

1 is a cross-sectional view of a conventional nitride light emitting diode. As shown therein, the buffer layer 11, the n-type nitride semiconductor layer 12, the active layer 13, and the p-type nitride semiconductor layer 14 are sequentially stacked on the substrate 10.

Mesa is etched from the p-type nitride semiconductor layer 14 to a portion of the n-type nitride semiconductor layer 12, and n- is formed on the n-type nitride semiconductor layer 12 exposed from the top by the mesa etching. The electrode 15 is formed,

The transparent electrode 16 is formed on the p-type nitride semiconductor layer 14 and the p-electrode 17 is formed on the transparent electrode 16.

In the conventional nitride light emitting diode configured as described above, since the p-type nitride semiconductor layer 14 has a low impurity doping concentration, the contact resistance is high and the ohmic characteristic is not good, so that the transparent electrode 16 is improved. Is formed on the p-type nitride semiconductor layer 14.

The transparent electrode 16 may be made of a metal having a relatively high transmittance, and a transparent electrode layer composed of a double layer of Ni / Au is currently widely used. It is known that the transparent electrode layer formed of the double layer of Ni / Au lowers the forward voltage V _f by forming an ohmic contact while increasing the current injection area.

However, the transparent electrode 16 made of Ni / Au has a low transmittance of about 60% to 70% even when treated using a heat treatment process. Such low transmittance lowers the overall luminous efficiency when the package is implemented by wire bonding using a light emitting device.

In order to overcome this low transmittance problem, a method of forming an Indium-Tin Oxide (ITO) layer, which is known to have a transmittance of about 90% or more in place of the double layer of Ni / Au, has been proposed.

However, the ITO has a weak adhesion to the GaN crystal, and the work function of the p-type GaN is 7.5 eV, whereas the work function of the ITO is 4.7-5.2 eV, so that ITO is directly deposited on the p-type GaN layer. In this case, there is a problem in that ohmic contact is not formed due to high contact resistance.

Accordingly, an object of the present invention is to form an oxide layer composed of a plurality of islands on the p-type nitride semiconductor layer spaced apart from each other, and then to form a bonding layer of a metal material on the p-type nitride semiconductor layer on which the oxide layer is not formed. The present invention provides a nitride based light emitting diode having a low contact resistance and a low operating voltage, and a method of manufacturing the same.

In a first embodiment of the nitride-based light emitting diode of the present invention, a buffer layer, an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer are sequentially stacked on the substrate;

Mesa is etched from the p-type nitride semiconductor layer to a portion of the n-type nitride semiconductor layer, and oxide layers formed of a plurality of islands are spaced apart from each other on the p-type nitride semiconductor layer;

A bonding layer is formed on top of the oxide layer and on a p-type nitride semiconductor layer on which the oxide layer is not formed, and a reflective film is bonded on the bonding layer;

A p-electrode is formed in a predetermined region above the reflective film, and an n-electrode is formed on the n-type nitride semiconductor layer exposed by the mesa etching.

According to a second embodiment of the nitride-based light emitting diode of the present invention, a buffer layer, an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer are sequentially stacked on the substrate;

A mesa is etched from the p-type nitride semiconductor layer to a portion of the n-type nitride semiconductor layer, and an oxide layer formed of a plurality of islands is spaced apart from each other on the p-type nitride semiconductor layer;

A transparent electrode is formed on the p-type nitride semiconductor layer where the oxide layer is not formed, and a p-electrode is formed on a portion of the transparent electrode and the oxide layer, and n is exposed by the mesa etching. An n-electrode is formed on the type nitride semiconductor layer.

In a third embodiment of the nitride-based light emitting diode of the present invention, an active layer and a p-type nitride semiconductor layer are sequentially formed below the n-type nitride semiconductor layer;

An oxide layer composed of a plurality of islands is formed below the p-type nitride semiconductor layer, and a bonding layer is formed below the oxide layer and the p-type nitride semiconductor layer under which the oxide layer is not formed;

A reflective film is bonded under the bonding layer, a conductive support substrate is formed under the reflective film, and an n-electrode is formed on the n-type nitride semiconductor layer.

In the manufacturing method according to the first embodiment of the nitride-based light emitting diode of the present invention, the step of sequentially forming a buffer layer, n-type nitride semiconductor layer, active layer, p-type nitride semiconductor layer on the substrate, and the p-type nitride semiconductor layer Mesa etching to a portion of the n-type nitride semiconductor layer, and forming an oxide layer formed of a plurality of islands on the p-type nitride semiconductor layer spaced apart from each other, the top of the oxide layer and the oxide Forming a junction layer on the p-type nitride semiconductor layer, on which the layer is not formed, forming a reflection layer on the junction layer, and forming a p-electrode on the reflection layer, and n-exposed by the mesa etching process. And forming an n-electrode on top of the type nitride semiconductor layer.

In the manufacturing method according to the second embodiment of the nitride-based light emitting diode of the present invention, the step of sequentially forming a buffer layer, n-type nitride semiconductor layer, active layer, p-type nitride semiconductor layer, and the p-type nitride semiconductor layer Mesa etching to a portion of the n-type nitride semiconductor layer, forming an oxide layer formed of a plurality of islands on the p-type nitride semiconductor layer spaced apart from each other, and the oxide layer is not formed forming a transparent electrode on the p-type nitride semiconductor layer, and forming a p-electrode on a portion of the oxide layer and the transparent electrode, and n-electrode on the n-type nitride semiconductor layer exposed by the mesa etching process. Characterized in that it comprises a step of forming.

In the manufacturing method according to the third embodiment of the nitride-based light emitting diode of the present invention, the step of sequentially forming an n-type nitride semiconductor layer, an active layer, a p-type nitride semiconductor layer on the substrate, and on the p-type nitride semiconductor layer Forming an oxide layer composed of a plurality of islands spaced apart from each other, forming a bonding layer on the oxide layer and on the p-type nitride semiconductor layer on which the oxide layer is not formed, and forming a reflective film on the bonding layer. Forming a conductive support substrate on the reflective film, separating the substrate from the n-type nitride semiconductor layer, and forming an n-electrode below the n-type nitride semiconductor layer. It is characterized by.

Hereinafter, the nitride-based light emitting diode of the present invention and a manufacturing method thereof will be described in detail with reference to FIGS. 2 to 8. 2 is a cross-sectional view showing a first embodiment of the nitride-based light emitting diode of the present invention.

As shown in the drawing, the buffer layer 110, the n-type nitride semiconductor layer 120, the active layer 130, and the p-type nitride semiconductor layer 140 are sequentially stacked on the substrate 100.

Mesa etching is performed from the p-type nitride semiconductor layer 140 to a portion of the n-type nitride semiconductor layer 120, and the oxide layer 150 formed of a plurality of islands is disposed on the p-type nitride semiconductor layer 140. ) Are spaced apart from each other,

A bonding layer 160 is formed on the oxide layer 150 and an upper portion of the p-type nitride semiconductor layer 140 on which the oxide layer 150 is not formed, and a reflective film is formed on the bonding layer 160. 170) is joined,

The p-electrode 180 is formed in a predetermined region on the reflective film 170, and the n-electrode 190 is formed on the n-type nitride semiconductor layer 120 exposed by the mesa etching. have.

In the nitride-based light emitting diode configured as described above, the substrate 100 uses a sapphire substrate, a silicon carbide substrate, or the like, and in particular, a sapphire substrate is typically used. This is because there is no commercial substrate in the lattice match that is identical to the crystal structure of the nitride semiconductor material grown on the substrate 100.

The buffer layer 110 is formed to mitigate a difference in lattice mismatch and thermal expansion coefficient between the substrate 100 and the n-type nitride semiconductor layer 120 formed on the substrate 100. Or an AlN layer is used.

The n-type nitride semiconductor layer 120 is n− having an Al _x In _y Ga _(1-xy) N composition formula, where 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, and 0 ≦ x + y ≦ 1. It may be made of a doped semiconductor material, in particular GaN is widely used.

The active layer 130 has a quantum well structure and may be formed of GaN or InGaN.

The p-type nitride semiconductor layer 140, like the n-type nitride semiconductor layer 120, Al _x In _y Ga _(1-xy) N composition formula (where 0≤x≤1, 0≤y≤1, 0 ≦ x + y ≦ 1) and p-doped.

The buffer layer 110, the n-type nitride semiconductor layer 120, the active layer 130, and the p-type nitride semiconductor layer 140 may be formed using a metal organic chemical vapor deposition (MOCVD) method or a molecular beam epitaxy (MBE) method. Grow using a deposition process.

The oxide layer 150 is formed with a plurality of islands spaced apart from each other on the p-type nitride semiconductor layer 140, wherein the islands have a stripe shape, a mesa shape, a hexagon shape, a square shape, It can form in various ways, such as a convex lens type.

The oxide forming the oxide layer 150 is made of transparent conducting oxide (TCO) including ITO and ZnO.

The bonding layer 160 is formed to increase the adhesion between the p-type nitride semiconductor 140 and the oxide layer 150 and the reflective film 170, and the bonding layer 160 is Ti (titanium). , W (tungsten), Ni (nickel) is made of any one material, the bonding layer 160 is preferably formed to a thickness of 1 ~ 10 nm.

The reflective film 170 is made of one metal selected from Ag, Al, Au, Ni, Ti, or an alloy of two or more metals selected from the metals. The reflective film 170 reflects light generated from the active layer 130 to the outside.

That is, the reflective film 170 is to prevent the light emitted from the active layer 130 is attenuated in the device to reduce the amount of light of the light emitting diode.

As such, after the oxide layers 150 formed of a plurality of islands are formed on the p-type nitride semiconductor layer 140 to be spaced apart from each other, the p-type nitride semiconductor layer 140 on which the oxide layer 150 is not formed is formed. When the bonding layer 160 is formed on the oxide layer 150, the oxide layer 150 serves as a transparent electrode to increase the luminous efficiency of the device, and the reflective film 170 made of a metal material from the p-electrode 180. ) And the contact layer is lowered through the junction layer 160, so that the ohmic contact can be formed, thereby lowering the operating voltage of the device.

3 is a plan view showing a first embodiment of the nitride-based light emitting diode of the present invention. For convenience, the state before the reflection film and the p-electrode is formed is shown.

As shown in the drawing, a rectangular oxide layer 150 is formed on the p-type nitride semiconductor layer (not shown) and spaced apart from each other at regular intervals.

A junction layer 160 made of Ti, W, Ni, or the like is formed in a region where the oxide layer 150 is not formed on the p-type nitride semiconductor layer, and the n-type nitride semiconductor layer 120 exposed by mesa etching. The n-electrode 190 is formed on the top.

Here, the current flowing through the p-electrode (not shown) is injected into the active layer through the bonding layer 160 which is formed as a whole spread over the p-type nitride semiconductor layer.

Therefore, since the current is uniformly spread and injected into the active layer, the current spreading effect is increased, thereby improving the efficiency of the device when the high power operation of the light emitting diode is performed.

4 is a cross-sectional view showing a second embodiment of the nitride-based light emitting diode of the present invention. As shown in the drawing, the buffer layer 210, the n-type nitride semiconductor layer 220, the active layer 230, and the p-type nitride semiconductor layer 240 are sequentially stacked on the substrate 200.

A mesa is etched from the p-type nitride semiconductor layer 240 to a portion of the n-type nitride semiconductor layer 220, and the oxide layer 250 formed of a plurality of islands is disposed on the p-type nitride semiconductor layer 240. ) Are spaced apart from each other,

A transparent electrode 260 is formed on the p-type nitride semiconductor layer 240 where the oxide layer 250 is not formed, and in a predetermined region on the transparent electrode 260 and the oxide layer 250. The p-electrode 270 is formed, and the n-electrode 280 is formed on the n-type nitride semiconductor layer 220 exposed by the mesa etching.

Here, the oxide layer 250 formed with a plurality of islands spaced apart from each other on the p-type nitride semiconductor layer 240 is made of transparent conducting oxide (TCO) including ITO and ZnO, and the shape of the island is striped. (Stripe), mesa (mesa), hexagon, square, convex lens type, etc. can be formed in various ways.

The transparent electrode 260 is formed on the p-type nitride semiconductor layer 240 in which the oxide layer 250 is not formed in order to minimize absorption of light emitted from the active layer 230, and Ni is a metal material. It is preferable that it consists of a bilayer of / Au.

In the second embodiment of the nitride-based light emitting diode of the present invention configured as described above, the current flowing through the p-electrode 270 is formed to be entirely spread over the p-type nitride semiconductor layer 240, the metal It is widely spread and supplied to the active layer 230 through a transparent electrode 260 made of a double layer of Ni / Au as a material.

In other words, the transparent electrode 260 is formed of a double layer of Ni / Au, which is a metal material, thereby lowering the contact resistance of the p-type nitride semiconductor 240.

5 is a cross-sectional view showing a third embodiment of the nitride-based light emitting diode of the present invention. As shown in the drawing, an active layer 310 and a p-type nitride semiconductor layer 320 are sequentially formed below the n-type nitride semiconductor layer 300,

An oxide layer 330 having a plurality of islands is formed below the p-type nitride semiconductor layer 320 and spaced apart from each other, and the lower portion of the oxide layer 330 and the oxide layer 330 are not formed. A bonding layer 340 is formed under the nitride semiconductor layer 320.

A reflective film 350 is bonded to the lower portion of the bonding layer 340, a conductive support substrate 360 is formed below the reflective film 350, and an n-electrode is formed on the n-type nitride semiconductor layer 300. 370 has a structure formed.

Since the conductive support substrate 360 serves as a p-electrode, the conductive support substrate 360 is preferably made of any one metal selected from gold (Au), copper (Cu), silver (Ag), and aluminum (Al).

In this case, the same effect as the invention shown in FIG. 2 can be obtained, and in addition, since the p-electrode and the n-electrode are formed in a vertical structure, the flow of current is good to lower the operating voltage and the current in the active layer 310. The uniformity of the has good characteristics.

In addition, it is not necessary to remove a portion of the active layer 310 to form the n-electrode 370, thereby increasing the light emitting area, thereby increasing the light emitting efficiency.

6A to 6F are sectional views showing the manufacturing method of the first embodiment of the nitride light emitting diode of the present invention. As shown in the figure, first, the buffer layer 410, the n-type nitride semiconductor layer 420, the active layer 430, and the p-type nitride semiconductor layer 440 are sequentially stacked on the substrate 400 (FIG. 6A).

Next, a portion of the n-type nitride semiconductor layer 420 is exposed by mesa etching from the p-type nitride semiconductor layer 440 to a portion of the n-type nitride semiconductor layer 420 (FIG. 6B).

Subsequently, an oxide layer 450 including a plurality of islands is formed on the p-type nitride semiconductor layer 440 so as to be spaced apart from each other (FIG. 6C).

Here, the islands may be formed in various shapes such as a stripe type, a mesa type, a hexagonal shape, a square shape, a convex lens type, and the oxide layer 450 may be formed of indium tin oxide (ITO), ZnO, It is made of any one material selected from transparent conducting oxides (TCO).

Thereafter, a bonding layer 460 is formed on the oxide layer 450 and on the p-type nitride semiconductor layer 440 where the oxide layer 450 is not formed (FIG. 6D).

Here, the bonding layer 460 is made of any one material selected from Ti, W, Ni, the bonding layer 460 is preferably formed to a thickness of 10 ~ 30 Å.

Next, a reflective film 470 is formed on the bonding layer 460 (FIG. 6E). The reflective film 470 is made of one metal selected from Ag, Al, Au, Ni, Ti, or an alloy of two or more metals selected from the metals.

Subsequently, a p-electrode 480 is formed on the reflective film 470, and an n-electrode 490 is formed on the n-type nitride semiconductor layer 420 exposed by the mesa etching process (FIG. 6F). .

7A to 7E are sectional views showing the manufacturing method of the second embodiment of the nitride-based light emitting diode of the present invention. As shown in the drawing, first, the buffer layer 510, the n-type nitride semiconductor layer 520, the active layer 530, and the p-type nitride semiconductor layer 540 are sequentially stacked on the substrate 500 (FIG. 7A).

Next, a portion of the n-type nitride semiconductor layer 520 is exposed by mesa etching from the p-type nitride semiconductor layer 540 to a portion of the n-type nitride semiconductor layer 520 (FIG. 7B).

Subsequently, an oxide layer 550 formed of a plurality of islands is formed on the p-type nitride semiconductor layer 540 to be spaced apart from each other (FIG. 7C). Here, the shape of the island may be variously formed, such as a stripe type, a mesa type, a hexagonal shape, a square shape, a convex lens type, and the like.

Thereafter, a transparent electrode 560 is formed on the p-type nitride semiconductor layer 540 on which the oxide layer 550 is not formed (FIG. 7D). Here, the transparent electrode 560 is preferably made of a double layer of Ni / Au.

Next, a p-electrode 570 is formed in a predetermined region on the transparent electrode 560 and the oxide layer 550, and n is formed on the n-type nitride semiconductor layer 520 exposed through the mesa etching. An electrode 580 is formed (FIG. 7E).

8A to 8F are sectional views showing the manufacturing method of the third embodiment of the nitride-based light emitting diode of the present invention. As shown in the drawing, first, an n-type nitride semiconductor layer 610, an active layer 620, and a p-type nitride semiconductor layer 630 are sequentially formed on the substrate 600 (FIG. 8A).

Next, an oxide layer 640 including a plurality of islands is formed on the p-type nitride semiconductor layer 630 so as to be spaced apart from each other (FIG. 8B).

Thereafter, a bonding layer 650 is formed over the oxide layer 640 and over the p-type nitride semiconductor layer 630 in which the oxide layer 640 is not formed (FIG. 8C). Here, the bonding layer 650 is made of any one material selected from Ti (titanium), W (tungsten), Ni (nickel), and preferably formed with a thickness of 1 to 10 nm.

Subsequently, a reflective film 660 is formed on the bonding layer 650, and a conductive support substrate 670 is formed on the reflective film 660 (FIG. 8D).

Here, the reflective film 660 is made of any one metal selected from Ag, Al, Au, Ni, Ti, or an alloy of two or more metals selected from the metals.

In addition, since the conductive support substrate 670 serves as a p-electrode, a metal having excellent electrical conductivity is used, and a metal having high thermal conductivity is used because it must be able to sufficiently dissipate heat generated during operation of the device. use.

Accordingly, the conductive support film 670 is preferably made of any one metal selected from gold (Au), copper (Cu), silver (Ag), and aluminum (Al).

Next, the substrate 600 is separated from the n-type nitride semiconductor layer 610 (FIG. 8E). Here, the substrate 600 may be removed by a laser lift off (LLO) method using an excimer laser or the like, or may be a dry or wet etching method.

In particular, the substrate 600 may be removed by a laser lift-off method. That is, when focusing and irradiating an excimer laser light having a predetermined wavelength to the substrate 600, thermal energy is concentrated on the interface between the substrate 600 and the n-type nitride semiconductor layer 610. As the interface of the n-type nitride semiconductor layer 610 is separated into gallium and nitrogen molecules, the substrate 600 is instantaneously separated at the portion where the laser light passes.

After performing the laser lift-off process, the roughened surface of the n-type nitride semiconductor layer 610 may be polished by an ICP / RIE (Inductively Coupled Plasma / Reactive Ion Etching) method.

Thereafter, an n-electrode 680 is formed under the n-type nitride semiconductor layer 610 (FIG. 8F).

On the other hand, while the present invention has been shown and described with respect to specific preferred embodiments, various modifications and variations of the present invention without departing from the spirit or field of the invention provided by the claims below It will be readily apparent to one of ordinary skill in the art that it can be used.

According to the present invention, the oxide layer is transparent by forming an oxide layer composed of a plurality of islands spaced apart from each other, and then forming a bonding layer on the p-type nitride semiconductor layer on which the oxide layer is not formed. It acts as an electrode to increase the luminous efficiency of the device, the current flows from the p-electrode through the reflective film and the bonding layer of the metal material to form a ohmic contact because the contact resistance is lowered, lowering the operating voltage It is effective.

In addition, since the current flowing through the p-electrode is uniformly injected into the active layer through the bonding layer formed on the p-type nitride semiconductor layer as a whole, the current diffusion effect is increased, thereby improving the luminous efficiency of the device. There is.

In addition, by forming a plurality of islands spaced apart from each other, the oxide layer serves as surface texturing, thereby improving light extraction efficiency.

Claims (12)

A buffer layer, an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer are sequentially stacked on the substrate, Mesa is etched from the p-type nitride semiconductor layer to a portion of the n-type nitride semiconductor layer, the conductive oxide layer consisting of a plurality of islands are formed spaced apart from each other on the p-type nitride semiconductor layer, A bonding layer is formed on top of the conductive oxide layer and on a p-type nitride semiconductor layer on which the conductive oxide layer is not formed, and a reflective film is bonded on the bonding layer. A p-electrode is formed in a predetermined region above the reflective film, and an n-electrode is formed on the n-type nitride semiconductor layer exposed by the mesa etching. A buffer layer, an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer are sequentially stacked on the substrate, Mesa is etched from the p-type nitride semiconductor layer to a portion of the n-type nitride semiconductor layer, the conductive oxide layer consisting of a plurality of islands are formed spaced apart from each other on the p-type nitride semiconductor layer, A transparent electrode is formed on the p-type nitride semiconductor layer on which the conductive oxide layer is not formed, and a p-electrode is formed on a portion of the transparent electrode and the conductive oxide layer, and the mesa is etched and exposed. A nitride based light emitting diode in which an n-electrode is formed on the n-type nitride semiconductor layer. an active layer and a p-type nitride semiconductor layer are sequentially formed below the n-type nitride semiconductor layer, Conductive oxide layers composed of a plurality of islands are formed below the p-type nitride semiconductor layer, and a bonding layer is formed below the conductive oxide layer and the p-type nitride semiconductor layer in which the conductive oxide layer is not formed. It is A reflective film is bonded below the bonding layer, a conductive support substrate is formed below the reflective film, and an n-electrode is formed above the n-type nitride semiconductor layer. The nitride-based light emitting diode of any one of claims 1 to 3, wherein the conductive oxide layer is made of transparent conducting oxide (TCO). The shape of the island according to any one of claims 1 to 3, wherein the island has a shape selected from a stripe type, a mesa type, a hexagonal shape, a square shape, and a convex lens type. Nitride-based light emitting diode. The nitride-based light emitting diode of claim 2, wherein the transparent electrode comprises a double layer of Ni / Au. The nitride-based light emitting diode of claim 1 or 3, wherein the bonding layer is made of any one material selected from Ti, W, and Ni, and has a thickness of 1 to 10 nm. The nitride-based light emitting diode of claim 1 or 3, wherein the reflective film is made of one metal selected from Ag, Al, Au, Ni, Ti, or an alloy of two or more metals selected from the metals. The nitride-based light emitting diode of claim 3, wherein the conductive support substrate is made of any one metal selected from Au, Cu, Ag, and Al. Sequentially forming a buffer layer, an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on the substrate; Mesa etching from the p-type nitride semiconductor layer to a portion of the n-type nitride semiconductor layer; Forming a conductive oxide layer formed of a plurality of islands spaced apart from each other on the p-type nitride semiconductor layer; Forming a junction layer on the conductive oxide layer and on the p-type nitride semiconductor layer on which the conductive oxide layer is not formed; Forming a reflective film on the bonding layer; And Forming a p-electrode on the reflective film and forming an n-electrode on the mesa-etched and exposed n-type nitride semiconductor layer. Sequentially forming a buffer layer, an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on the substrate; Mesa etching from the p-type nitride semiconductor layer to a portion of the n-type nitride semiconductor layer; Forming a conductive oxide layer formed of a plurality of islands spaced apart from each other on the p-type nitride semiconductor layer; Forming a transparent electrode on the p-type nitride semiconductor layer on which the conductive oxide layer is not formed; And Forming a p-electrode in a predetermined region on the conductive oxide layer and the transparent electrode, and forming an n-electrode on the n-type nitride semiconductor layer exposed by the mesa etching Way. Sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on the substrate; Forming a conductive oxide layer formed of a plurality of islands spaced apart from each other on the p-type nitride semiconductor layer; Forming a junction layer on the conductive oxide layer and on the p-type nitride semiconductor layer on which the conductive oxide layer is not formed; Forming a reflective film on the bonding layer and forming a conductive support substrate on the reflective film; Separating the substrate from the n-type nitride semiconductor layer; And And forming an n-electrode under the n-type nitride semiconductor layer.

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