KR101116755B1 - SiC/C/SiO2 composite powders fabricated by sol-gel process, and fabrication method of reaction bonded silicon carbide with high purity and high strength using them - Google Patents

Abstract

The present invention relates to a silicon carbide / carbon / silica composite powder produced by a sol-gel process, and to a method for producing high purity and high strength reaction-sintered silicon carbide using the composite powder.

Since the reaction sintered silicon carbide prepared by the present invention has high purity and high strength at the same time, it is variously applied to reaction sintered silicon carbide (RBSC) fixtures for next-generation semiconductor high temperature processes, components for high temperature vacuum devices, and heater materials for semiconductor processes. .

Composite powder, reaction sintering, silicon carbide, high purity, high strength

Description

Silicon carbide / carbon / silica composite powder prepared by sol-gel process and method for producing high purity and high strength reaction sintered silicon carbide using this composite powder {SiC / C / SiO2 composite powders fabricated by sol-gel process, and fabrication method of reaction bonded silicon carbide with high purity and high strength using them}

The present invention relates to a silicon carbide / carbon / silica composite powder prepared by a sol-gel process at low temperature, and a method for producing high purity and high strength reaction-sintered silicon carbide using the composite powder.

Reaction Bonded Silicon Carbide not only has excellent heat, corrosion and mechanical properties, but also maintains the original dimensions and shape of the molded body after sintering, making it possible to produce silicon carbide products of the desired shape with minimal processing. In particular, large products are considered to be of high commercial value because they can be sintered at relatively low temperatures. Reaction sintered silicon carbide having high purity characteristics has been developed and used as a material for reaction tubes, susceptors and heaters used in semiconductor high temperature processes.

Since reaction sintered silicon carbide has excellent high temperature strength, thermal shock resistance, and thermal expansion coefficient similar to that of a silicon wafer, it is widely used to replace quartz as a jig material in a semiconductor high temperature process using a 300 mm silicon wafer. In the next-generation semiconductor manufacturing process that will achieve large diameter (450 mm) and ultra fine line width (30 nm) of silicon wafers, high-strength and high purity of reaction-sintered silicon carbide is required to develop reaction-sintered silicon carbide fixtures for semiconductor high temperature processes.

In general, high-purity reaction-sintered silicon carbide manufacturing process technology for semiconductor high temperature process uses a high purity silicon carbide powder and a carbon source as raw materials, and performs a powder mixing process and a molding process used in a ceramic manufacturing process to form a molded body made of silicon carbide and carbon. In order to remove impurities, reacted silicon carbide was prepared by subjecting the formed article to high purity at high temperature and infiltrating molten silicon (Si) at a temperature above the melting point of silicon (Si).

US Patent No. 6,627,169 discloses a method for producing high purity reaction sintered silicon carbide for semiconductor high temperature processes having an impurity content of 0.01 ppm or less using high purity silicon carbide having an average particle size of 1 to 50 μm.

Japanese Patent Application Laid-Open No. 2000-119079 and U.S. Patent No. 6,699,401 disclose a kneading process of a high purity silicon carbide powder and a molding binder in which Fe is 0.05 ppm or less and Ni, Cu, Ca, Cr, and K are 0.05 ppm or less. Molding process for forming a molded body from kneaded raw material, process for calcining the molded body, high purity process for purifying the plasticizer used in the above, and infiltration of molten silicon (Si) at high temperature to the high-purified molded body at induction heating method A method of producing a high purity reaction sintered silicon carbide is disclosed.

In US Patent No. 6,632,761, a highly purified silicon carbide powder having a controlled size is dispersed in a solvent and then mixed with an organic binder and a nitrogen compound to prepare a silicon carbide mixed powder slurry, which is poured into a mold and dried to prepare a molded product. In addition, a method for producing reaction-sintered silicon carbide is disclosed by infiltration of molten silicon at a temperature equal to or higher than the melting point of silicon (Si) under vacuum or an inert gas atmosphere.

As described above, the conventional reaction sintered silicon carbide manufacturing process uses a separate carbon source to infiltrate molten silicon (Si) in the silicon carbide powder, and the reaction source sintered silicon carbide by homogeneously mixing the carbon source and silicon carbide powder A mixing process was necessary to have a uniform microstructure. However, the method known to date is difficult to uniformly mix the silicon carbide powder and the carbon source, it was difficult to produce high-strength reaction-sintered silicon carbide having a uniform microstructure. In addition, the production cost of high-purity reaction-sintered silicon carbide manufactured using high-purity silicon carbide produced at high temperature is not only high, but it is also impossible to purchase high-purity silicon carbide powder having a purity of 99.999% or more.

Therefore, there is an urgent need for a new low-cost manufacturing process of reaction-sintered silicon carbide having high purity and high strength properties that can replace the existing high-purity reaction-sintered silicon carbide manufacturing process.

The present invention provides a method for producing reaction-sintered silicon carbide using a silicon carbide / carbon / silica composite powder in which the content of carbon and silica remaining unreacted in a composite powder composed of silicon carbide used for the production of reaction-sintered silicon carbide It is an object of the present invention to provide.

The present invention utilizes a silicon carbide / carbon / silica composite powder prepared at a temperature lower than about 1700 ° C. to form a silicon carbide powder or a silicon carbide / carbon composite powder. It is a problem to be solved by the present invention to provide a process for producing reaction-sintered silicon carbide which has a lowering effect.

The present invention eliminates the step of mixing the silicon carbide powder and carbon source and the high purity treatment process required in the production of high purity reaction sintered silicon carbide sintering process to produce a highly economical reaction sintered silicon carbide that can reduce the cost of the product by simplifying the process It is an object of the present invention to provide.

The present invention is to provide a reaction-sintered silicon carbide having high purity and high strength characteristics at a low price by using the above-described high-purity silicon carbide / carbon / silica composite powder to solve the problem.

The present invention provides homogeneous dispersion of beta-phase silicon carbide (β-SiC / C) powder, carbon powder produced by thermal decomposition of carbon source, and silica powder in which liquid silicon source reacts with carbon source and remains unreacted. By providing a silicon carbide / carbon / silica composite powder, the problem of the present invention is solved.

The present invention also provides a process for mixing a silicon source and a carbon source using an alcohol solvent so that the molar ratio (C / Si) of the carbon element to 1 mol of the silicon element is in the range of 1.8 to 3.0; Adding a hydrolysis catalyst to the mixture at a molar ratio of 0.05 to 0.14 based on 1 mole of the silicon source, gelling and curing to prepare a cured gel powder; Heat-treating the cured gel powder in a nitrogen (N ₂ ) atmosphere at a temperature ranging from 900 to 1200 ° C. for 0.5 to 6 hours to produce a silicon carbide precursor (precursor) powder consisting of silica (SiO ₂ ) and carbon; The prepared silicon carbide precursor powder was heated at a rate of 2 to 5 ° C./min in an inert or vacuum atmosphere, and heat-treated at a temperature of 1300 to 1600 ° C. to form beta-like silicon carbide / carbon / silica (β-SiC / C / SiO _2). A process for preparing a composite powder; By providing a method for producing a silicon carbide / carbon / silica composite powder comprising a, to solve the problem of the present invention.

In addition, the present invention is a process for producing a plate-like silicon carbide / carbon / silica molded body by pressing after mixing 100 parts by weight of the silicon carbide / carbon / silica composite powder and 2 to 5 parts by weight of the binder; And producing reaction-sintered silicon carbide by infiltration of molten silicon into the silicon carbide / carbon / silica molded body at a temperature of 1450 to 1600 ° C. and a pressure of 10 ⁻² to 10 ⁻¹ torr; By providing a method for producing a high purity and high strength reaction sintered silicon carbide comprising a, the problem of the present invention is solved.

In addition, the present invention has a relative density ranging from 2.8 to 3.01 g / cm ³ , the maximum breaking strength is 530 MPa, and the purity measured by inductively coupled plasma spectroscopy (ICP) method is 99.999% or higher, high purity and high strength reaction sintering carbonization. By providing silicon, the subject of this invention is solved.

The present invention has the effect of lowering the production cost of high purity and high strength reaction sintered silicon carbide products by using a high purity silicon carbide / carbon / silica composite powder having a homogeneous distribution synthesized at low temperature as a raw material for producing reaction sintered silicon carbide.

According to the present invention, it is possible to provide reaction-sintered silicon carbide having low purity, high purity and high strength by controlling the amount of carbon source and silicon source defined by the C / Si element molar ratio, and controlling the content of carbon and silica remaining in the silicon carbide composite powder. Have

 Hereinafter, the method for preparing the silicon carbide / carbon / silica composite powder according to the present invention will be described in detail.

In the present invention, the starting material used for synthesizing the silicon carbide / carbon / silica composite powder uses a high-purity material that contains or does not contain 0.05 ppm or less of a metallic element which can be introduced into impurities in a semiconductor high temperature process. . Silicon alkoxides (e.g. methoxysilane, triethoxysilane, dimethoxydiethoxysilane, tetramethyl orthosilicate, tetraethyl orthosilicate) as the silicon source, alkylsilanes (e.g. ethylsilane, tetra High purity liquid silicon compounds such as ethylsilane) are used. A high purity phenolic resin is used as a carbon source. Acids such as p-toluenesulfonic acid (p-TSA), nitric acid, oleic acid, maleic acid, acrylic acid and hydrochloric acid are used as the hydrolysis catalyst. The silicon source and the carbon source are mixed using a solvent, in which an aliphatic alcohol (for example, methanol, ethanol, isopropanol) is used.

First, the silicon source and the carbon source are mixed using an alcohol solvent, and at this time, the molar ratio (C / Si) of the carbon element to 1 mol of the silicon element is adjusted to be in the range of 1.8 to 3.0. A hydrolysis catalyst is added to the mixture, and the hydrolysis catalyst is added in a range of 0.05 to 0.14 molar ratio based on 1 mole of the silicon source. Then, the mixture is gelled while stirring for 2 to 24 hours at a temperature of 40 to 60 ° C. so as to be uniformly mixed to crosslink the silicon source and the carbon source, and then powdered, followed by a constant temperature dryer at 50 to 200 ° C. The cured gel powder is then cured completely for 8 to 24 hours. The cured gel powder was heat treated in a high purity quartz reaction tube under a nitrogen (N ₂ ) atmosphere at a temperature ranging from 900 to 1200 ° C. for 0.5 to 6 hours to form a silicon carbide precursor powder composed of silica (SiO ₂ ) and carbon. To prepare. The silicon carbide precursor powder was placed in a high purity graphite hermetically sealed container and heated at a rate of temperature increase from 2 ° C. to 5 ° C./min from room temperature (20 ° C.) while maintaining a vacuum, and then argon (Ar) in a temperature range of 1300 ° C. to 1600 ° C. A beta-phase silicon carbide / carbon / silica (β-SiC / C / SiO ₂ ) composite powder is prepared by heat treatment under an inert atmosphere or vacuum for 0.5 to 3 hours.

The silicon carbide / carbon / silica composite powder prepared by the production method of the present invention is a beta-phase silicon carbide (β-SiC / C) powder, carbon (C) powder produced by thermal decomposition of a carbon source, and a liquid silicon source. Silica (SiO ₂ ) powder, which remains unreacted by reacting with a carbon source at low temperature, is evenly dispersed. Beta-phase silicon carbide (β-SiC) powder has an average particle size of 5.0 μm or less, specifically 0.1 to 5.0 μm, and carbon (C) powder has an average particle size of 1.0 μm or less, specifically 0.01 to 1.0 μm, and the silica (SiO ₂ ) powder has an average particle size of 1.0 μm or less, specifically 0.01 to 1.0 μm.

In addition, the silicon carbide / carbon / silica composite powder prepared by the production method of the present invention is 15 to 36% by weight of the residual carbon content in the composite powder, the silica content is adjusted to the range of 9 to 27% by weight. The residual carbon content in the composite powder was measured from the weight loss after oxidizing the silicon carbide / carbon / silica composite powder at 700 ° C. for 3 hours. The silica content in the composite powder was measured by XRD quantitative analysis after crystallizing the silica by heating the oxidized powder at 1800 ° C. under an inert atmosphere for 3 hours.

The present invention is characterized by a method for producing reaction-sintered silicon carbide produced using a silicon carbide / carbon / silica composite powder. The method for producing reaction-sintered silicon carbide will be described in detail as follows.

After mixing 2 to 5 parts by weight of a phenol resin as a binder to 100 parts by weight of the silicon carbide / carbon / silica composite powder prepared above, uniaxially pressurizing at 10 to 30 MPa pressure, and hydrostatic pressure to 80 to 150 MPa pressure (cold isostatic pressing) to prepare a plate-shaped silicon carbide / carbon / silica molded body.

The silicon carbide / carbon / silica molded article thus prepared is placed in a high purity graphite hermetically sealed container, and then maintained at a temperature of 1450 to 1600 ° C. and a pressure of 10 ⁻¹ torr or less, preferably 10 ⁻² to 10 ⁻¹ torr. While the molten silicon is infiltrated into the silicon carbide / carbon molded body to produce the reaction-sintered silicon carbide. The molten silicon is a melt of semiconductor grade ultra high purity metal silicon. The total amount of silicon (Si) used in the molten silicon infiltration process is 110 to 130 mol% based on the carbon source contained in the silicon carbide / carbon / silica molding and 110 to 130 of the amount of silicon that can fill the pore volume of the molding. A sum of weight percent is used.

As a result, the molten silicon supplied from the outside is infiltrated into the silicon carbide / carbon / silica molded body and reacts with the carbon powder homogeneously dispersed in the molded body, thereby synthesizing the silicon carbide and homogeneously in the molded body by the heat generated during the synthesis of silicon carbide. The dispersed silica powder and carbon react at low temperatures to form silicon carbide, and the extra molten silicon is actively infiltrated into the voids inside the molded body, and the reaction is made of silicon and silicon carbide with a dense microstructure without pores. Sintered silicon carbide sintered body is produced.

The relative density of the reaction-sintered silicon carbide sintered body manufactured by the method described above is in the range of 2.8 to 3.01 g / cm ³ , and the maximum breaking strength is 530 MPa. The purity of the reaction-sintered silicon carbide was measured by inductively coupled plasma spectroscopy (ICP) method, and the purity was more than 99.999%.

The present invention as described above will be described in more detail based on the following examples, but the present invention is not limited to these examples.

[Example]

Example 1

1) Preparation of Silicon Carbide / Carbon / Silica Composite Powder

Liquid tetraethyl orthosilicate (TEOS) was used as the silicon source, solid phenol resin was used as the carbon source, and maleic acid was used as the hydrolysis catalyst. The liquid silicon source and the solid carbon source were mixed with ethanol so that the elemental molar ratios of C / Si were 2.3, 2.5, 2.7, 3.0 and 4.2, respectively, and the hydrolysis catalyst was added at 0.1 molar ratio based on 1 mole of silicon source. Added. In order to uniformly mix the liquid silicon source and the carbon source, the mixture was gelled while stirring at a temperature of 40 ° C. for 12 hours to crosslink the silicon source and the carbon source, followed by powdering, and then in a constant temperature dryer at 100 ° C. Curing gel powder was prepared by fully curing for hours. The cured gel powder was heat-treated at 900 ° C. for 2 hours under a nitrogen (N ₂ ) atmosphere in a high purity quartz reaction tube to prepare a silicon carbide precursor (precursor) powder made of silica (SiO ₂ ) and carbon. The prepared silicon carbide precursor powder was placed in a high purity graphite hermetically sealed container and heated at a rate of 5 ° C./min while maintaining a vacuum from room temperature to 800 ° C., and heat-treated at 1600 ° C. under an argon (Ar) atmosphere for 4 hours to be carbonized in beta phase. A silicon / carbon / silica composite powder was prepared.

The beta phase silicon carbide / carbon / silica composite powder prepared by the above method was obtained as a composite powder in which beta phase silicon carbide powder, carbon powder and silica powder were evenly dispersed. In addition, in order to measure the carbon content and silica content remaining in the beta-phase silicon carbide / carbon / silica composite powder prepared by the above method, the weight loss amount after oxidizing the silicon carbide / carbon / silica composite powder at 700 ℃ for 3 hours The carbon content was measured, and the oxidized powder was heated at 1800 ° C. for 3 hours under an inert atmosphere to crystallize the silica, and the silica content was measured by XRD quantitative analysis. The measured residual carbon content and residual silica content are shown in Table 1, respectively.

2) Preparation of Reaction Sintered Silicon Carbide

After mixing 5 parts by weight of a high-purity phenolic resin with a binder to 100 parts by weight of the silicon carbide / carbon / silica composite powder prepared above, and then uniaxially pressurized to 20 MPa pressure and 20 to 20 MPa hydrostatic pressure (cold isostatic pressing) A plate-shaped silicon carbide / carbon / silica molded body of size 50 × 5 mm was prepared. After using a graphite vacuum furnace to place the silicon carbide / carbon / silica moldings produced in a high purity graphite hermetically sealed container, using a semiconductor grade ultra high purity silicon ingot, the temperature of 1550 ° C. and a vacuum of 10 ⁻¹ torr or less Reaction-sintered silicon carbide was prepared by infiltrating molten silicon into a silicon carbide / carbon molded body for 1 hour at. At this time, the amount of silicon (Si) used in the molten silicon infiltration process is 110 mol% based on the carbon source contained in the silicon carbide / carbon / silica molded body and 120% by weight of the amount of silicon that can fill the pore volume of the molded body Combined amounts were used.

The relative density and three-point bending strength of the reaction-sintered silicon carbide prepared by the above method were measured and shown in Table 1 below.

C / Si molar ratio β-SiC / C / SiO ₂ Composite Powder Reaction Sintered Silicon Carbide Residual carbon content Residual silica content Relative density 3-point bending strength 2.3  18.04 wt% 10.9 wt% 2.89 g / cm ³ 470 MPa 2.5 24.98 wt% 10.8 wt% 3.0 g / cm ³ 515 MPa 2.7 29.3 wt% 10.1 wt% 3.01 g / cm ³ 530 MPa 3.0 36 wt% 9.8 wt% 2.82 g / cm ³ 330 MPa 4.2 46.9 wt% 9.7 wt% 2.7 g / cm ³ 260 MPa

According to the results of Table 1, as the C / Si molar ratio of the carbon source and the silicon source increases, the content of the residual carbon powder tends to increase, and the content of the residual silica powder tends to decrease. When the C / Si molar ratio is 2.3 to 4.2, the relative density of the reaction-sintered silicon carbide sintered body is in the range of 2.7 to 3.01 g / cm ³ , the three-point bending strength is in the range of 260 to 530 MPa, and the relative density and mechanical strength are in the composite powder. It can be seen that it is closely related to the content of residual carbon and silica. In addition, in the reaction-sintered silicon carbide prepared using a composite powder containing 46.9% by weight in excess of the residual carbon content proposed by the present invention, cracking occurred due to excessive volume expansion due to the synthesis of silicon carbide during reaction sintering. . The purity of the prepared reaction-sintered silicon carbide was measured by ICP method, and the purity was more than 99.999%, and the purity did not significantly affect the content of residual carbon and residual silica.

Example 2

1) Preparation of Silicon Carbide / Carbon Composite Powder

Liquid tetraethyl orthosilicate (TEOS) was used as the silicon source, solid phenol resin was used as the carbon source, and nitric acid was used as the hydrolysis catalyst. The liquid silicon source and the carbon source were mixed with ethanol so that the C / Si molar ratios were 2.3, 2.7 and 3.0, respectively, and then a hydrolysis catalyst was added at 0.08 molar ratios based on 1 mole of the silicon source. In order to uniformly mix the liquid silicon source and the carbon source, the mixture was gelled while stirring at a temperature of 40 ° C. for 12 hours to crosslink the silicon source and the carbon source, followed by powdering, and then, in a constant temperature dryer at 100 ° C. Curing gel powder was prepared by fully curing for hours. The cured gel powder was heat-treated at 900 ° C. for 2 hours under a nitrogen (N ₂ ) atmosphere in a high purity quartz reaction tube to prepare a silicon carbide precursor (precursor) powder composed of silica (SiO ₂ ) and carbon. The prepared silicon carbide precursor powder was placed in a high-purity graphite sealed container and heated at a rate of 5 ° C./min while maintaining a vacuum from room temperature to 800 ° C., and heat-treated at 1400 ° C. under argon (Ar) for 6 hours to form a beta phase. Silicon carbide / carbon / silica composite powders were prepared.

The beta phase silicon carbide / carbon / silica composite powder prepared by the above method was obtained as a composite powder in which beta phase silicon carbide powder, carbon powder, and silica powder were evenly dispersed. In addition, in order to measure the carbon content and silica content remaining in the beta-phase silicon carbide / carbon / silica composite powder prepared by the above method, the weight loss amount after oxidizing the silicon carbide / carbon / silica composite powder at 700 ℃ for 3 hours The carbon content was measured, and the oxidized powder was heated at 1800 ° C. for 3 hours under an inert atmosphere to crystallize the silica, and the silica content was measured by XRD quantitative analysis. The measured residual carbon content and residual silica content are shown in Table 2 below, respectively.

2) Preparation of Reaction Sintered Silicon Carbide

After mixing 3 parts by weight of the phenol resin as a binder to 100 parts by weight of the silicon carbide / carbon / silica composite powder prepared as described above, 20 × 50 by a method of cold isostatic pressing at 120 MPa pressure after uniaxial pressure at 20 MPa pressure A plate-shaped silicon carbide / carbon / silica molded body of size 5 mm was prepared. After using a graphite vacuum furnace to place the silicon carbide / carbon / silica moldings produced in a high purity graphite hermetically sealed container, using a semiconductor grade ultra high purity silicon ingot and a temperature of 1500 ° C. and a vacuum of 10 ⁻¹ torr or less Reaction-sintered silicon carbide was prepared by infiltrating molten silicon into a silicon carbide / carbon molded body for 1 hour at. At this time, the amount of silicon (Si) used in the molten silicon infiltration process is 110 mol% based on the carbon source contained in the silicon carbide / carbon / silica molded body and 130% by weight of the amount of silicon that can fill the pore volume of the molded body Combined amounts were used. The relative density and three-point bending strength of the reaction-sintered silicon carbide prepared by the above method were measured and shown in Table 2 below.

C / Si molar ratio β-SiC / C / SiO ₂ Composite Powder Reaction Sintered Silicon Carbide Residual carbon content Residual silica content Relative density 3-point bending strength 2.3 27.6 wt% 27 wt% 2.9 g / cm ³ 430 MPa 2.5 34.6 wt% 26.2 wt% 2.98 g / cm ³ 450 MPa 3.0 45.1 wt% 25.8 wt% 2.82 g / cm ³ 320 MPa

According to the results of Table 2, as the C / Si molar ratio of the carbon source and the silicon source increases, the content of the residual carbon powder tends to increase, and the content of the residual silica powder tends to decrease. When the C / Si molar ratio is 2.3 to 3.0, the relative density of the reaction-sintered silicon carbide sintered body is in the range of 2.82 to 2.98 g / cm ³ , the three-point bending strength is in the range of 320 to 450 MPa, and the relative density and mechanical strength in the composite powder It can be seen that it is closely related to the content of residual carbon and silica.

Since the reaction sintered silicon carbide produced by the manufacturing method of the present invention has high strength and high purity, it can be applied to reaction sintered silicon carbide (RBSC) fixtures for next-generation semiconductor high temperature processes, components for high temperature vacuum devices, and heater materials for semiconductor processes. .

Claims (7)

Beta phase silicon carbide (β-SiC / C) powder; Carbon powder produced by pyrolysis of a carbon source; And Silica powder in which a liquid silicon source reacts with a carbon source and remains unreacted; A silicon carbide / carbon / silica composite powder, which is homogeneously dispersed. The silicon carbide / carbon / silica composite powder according to claim 1, wherein the composite powder has a residual carbon content of 15 to 36% by weight and a silica content of 9 to 27% by weight. Preparing a mixture by mixing the silicon source and the carbon source in an alcohol solvent so that the molar ratio (C / Si) of the carbon element to 1 mol of the silicon element is in the range of 1.8 to 3.0; Adding a hydrolysis catalyst to the mixture at a molar ratio of 0.05 to 0.14 based on 1 mole of the silicon source, gelling and curing to prepare a cured gel powder; Heat-treating the cured gel powder in a nitrogen (N ₂ ) atmosphere to produce a silicon carbide precursor (precursor) powder composed of silica (Silica, SiO ₂ ) and carbon; And The silicon carbide precursor (precursor) powder is heated at a rate of 2 ~ 5 ℃ / min in an inert or vacuum atmosphere, and heat-treated at a temperature of 1300 ~ 1600 ℃ beta phase silicon carbide / carbon / silica (β-SiC / C / SiO) ₂ ) preparing a composite powder; Method for producing a silicon carbide / carbon / silica composite powder comprising a. The method of claim 3, wherein the silicon source is a liquid silicon compound selected from silicon alkoxides and alkylsilanes. The method of claim 3, wherein the carbon source is a phenol resin. 4. The silicon carbide / carbon according to claim 3, wherein the hydrolysis catalyst is one or two or more acids selected from p-toluenesulfonic acid (p-TSA), nitric acid, oleic acid, maleic acid, acrylic acid and hydrochloric acid. / Silica composite powder production method. Preparing a plate-like silicon carbide / carbon / silica molded body by mixing 100 parts by weight of the silicon carbide / carbon / silica composite powder of any one of claims 1 or 2 with 2 to 5 parts by weight of the binder and then pressing the mixture; And Preparing a reaction-sintered silicon carbide by infiltration of molten silicon in the silicon carbide / carbon / silica molded body at a temperature of 1450 to 1600 ° C. and a pressure of 10 ⁻² to 10 ⁻¹ torr; Method for producing a reaction sintered silicon carbide comprising a.