KR101084311B1 - Atomic layer deposition apparatus - Google Patents

Abstract

An atomic layer deposition apparatus capable of preventing gas mixing and particle generation in an exhaust pipe is disclosed. In the atomic layer deposition apparatus, the tower exhaust unit, which is provided in the shower head and sucks and discharges exhaust gases in a plurality of injection regions in which different source gases are injected, discharges exhaust gases discharged from the respective injection regions of the shower head through independent flow paths. It may be configured to include a plurality of separation exhaust pipe formed to discharge and each of the separation exhaust pipe is connected to the shower head and a separation module for adjusting the pressure and the displacement of each separation exhaust pipe.

Atomic layer deposition apparatus, ALD, separate exhaust

Description

Atomic Layer Deposition Apparatus {ATOMIC LAYER DEPOSITION APPARATUS}

The present invention relates to an atomic layer deposition apparatus, and to provide an atomic layer deposition apparatus capable of preventing the generation of particles due to the mixing of the deposition gas in the exhaust pipe and the resulting blockage or exhaust failure of the exhaust pipe.

In general, a method of depositing a thin film having a predetermined thickness on a substrate such as a semiconductor substrate or glass includes physical vapor deposition (PVD) using physical collision, such as sputtering, and chemical reaction using a chemical reaction. Chemical vapor deposition (CVD) and the like. Recently, as the design rules of semiconductor devices are drastically fined, thin films of fine patterns are required, and the step height of regions where thin films are formed is also very large. Due to this trend, the use of atomic layer deposition (ALD), which is capable of forming a very uniform pattern of atomic layer thickness very uniformly and has excellent step coverage, has been increasing.

ALD is similar to the general chemical vapor deposition method in that it uses chemical reactions between gas molecules. However, in contrast to conventional CVD in which a plurality of gas molecules are simultaneously injected into the chamber to deposit the reaction product generated on the substrate, ALD injects a gas containing one source material into the chamber to chemisorb the heated substrate. There is a difference in that a product by chemical reaction between the source materials is deposited on the substrate surface by injecting a gas containing another source material into the chamber. These ALDs are widely attracting attention because they have the advantage of being able to deposit pure thin films having excellent step coverage characteristics and low impurity contents.

A semi-batch type ALD is disclosed in which a deposition process is simultaneously performed on a plurality of substrates in order to improve throughput in an ALD device. In general, the semi-batch type ALD is formed with a region in which different kinds of deposition gas is injected, and the chemical reaction between the deposition gases on the surface of the substrate as the substrate sequentially passes through each region by the high-speed rotation of the showerhead or susceptor. This occurs and works in such a way that the reaction product is deposited.

On the other hand, the ALD apparatus is provided with an exhaust portion for exhausting the exhaust gas including the residual deposition gas and reaction by-products not deposited on the substrate in the process chamber. By the way, the existing ALD device discharges the exhaust gas through one pipe or a plurality of pipes, but converges and discharges into the exhaust pipe that is finally discharged. Thus, particles may be generated by chemical reaction as the deposition gases are mixed inside the exhaust pipe. In particular, the top vacuum type ALD apparatus having an exhaust portion in the shower head has a relatively small diameter of the exhaust pipe for discharging the exhaust gas and a low vacuum pressure acting on the exhaust pipe, so that the flow rate of the exhaust gas is relatively low. As a result, particles are more likely to be generated by mixing deposition gas inside the exhaust pipe, and the exhaust pipe is easily clogged by the particles. In addition, when particles are generated, the degree of opening of the control valve provided in the exhaust pipe may be changed, which may result in a poor exhaust condition and an exhaust pressure condition of the process chamber.

Embodiments of the present invention for solving the above problems are to provide an atomic layer deposition apparatus that can prevent the generation of particles due to the mixing of the source gas in the exhaust pipe to discharge the exhaust gas and the resulting exhaust failure.

In addition, embodiments of the present invention is to provide an atomic layer deposition apparatus capable of preventing changes in process conditions due to poor exhaust of the exhaust gas.

According to embodiments of the present invention for achieving the above object of the present invention, the atomic layer deposition apparatus capable of separating and exhausting the deposition gas, by sucking the exhaust gas in a plurality of injection zones in which different source gases are injected In the exhaust part for discharging, the exhaust part includes a tower exhaust part connected to the shower head to discharge the exhaust gas. The tower exhaust unit may include a plurality of separation exhaust pipes formed to discharge the exhaust gas discharged from the respective injection zones of the shower head through independent flow paths, and each of the separation exhaust pipes may be connected to the shower head. It may be configured to include a separation module for adjusting the pressure and displacement of the.

In an embodiment, the separation module may include a plurality of internal flow paths to which the respective separation exhaust pipes are respectively connected, and a plurality of control units for individually adjusting the opening degree of the internal flow path. And a chamber exhaust for discharging the exhaust gas from the process chamber and adjusting the pressure inside the process chamber, wherein the tower exhaust is connected to the chamber exhaust by converging the separate exhaust pipe into one converging exhaust pipe. Here, the convergence exhaust pipe may be provided with an angle valve for connecting the convergence exhaust pipe and the chamber exhaust.

On the other hand, according to other embodiments of the present invention for achieving the above object of the present invention, the atomic layer deposition apparatus capable of separating and exhausting the deposition gas is provided in the process chamber, the process chamber to each other with respect to the substrate The shower head may include a shower head having a plurality of injection regions formed therein to inject different source gases, and a tower exhaust portion connected to the shower head to suck and discharge the exhaust gas from the respective injection regions. The tower exhaust unit may include a plurality of separate exhaust pipes formed to discharge the exhaust gas discharged from the respective injection zones through independent flow paths, and connect the process chamber or the shower head and the separate exhaust pipe. It may be composed of a separation module that controls the pressure and displacement of the separation exhaust pipe.

In detail, the separation module includes a plurality of internal flow paths and each of the internal flow paths connected to the shower head and communicating with the respective separation exhaust pipes so that the exhaust gases sucked from the respective injection zones can flow independently of each other. And it may be composed of a plurality of control unit for individually adjusting the opening degree of each inner flow path. The separation module may be modularized to be connected to the plurality of separation exhaust pipes at the same time. In addition, the shower head is provided with an exhaust line defined by a plurality of exhaust holes formed to suck and exhaust the exhaust gas inside the process chamber, the exhaust line is to exhaust the exhaust gas in each of the respective injection zones A plurality of exhaust lines may be provided along the boundary of the injection area, and the separation module may be configured to connect the respective exhaust lines and the respective exhaust pipes.

Here, a chamber exhaust part connected to the process chamber to discharge exhaust gas from within the process chamber and to regulate the pressure inside the process chamber is provided, and the chamber exhaust part is connected to the process chamber and discharges the exhaust gas. It is provided on the exhaust pipe and the chamber exhaust pipe flow path may be configured as a control valve for adjusting the opening degree of the chamber exhaust pipe. Here, the tower exhaust may be configured such that the plurality of separate exhaust pipes converge to one convergence exhaust pipe, and the convergence exhaust pipe may be configured to be connected to the chamber exhaust pipe after the control valve in the chamber exhaust.

As described above, according to the embodiments of the present invention, by configuring the exhaust pipe of the top exhaust portion of two pipes independent of each other, to prevent the generation of particles while the source gases are mixed with each other inside the exhaust pipe, the exhaust due to the particles It is possible to prevent defects and influences on exhaust pressure changes or process conditions.

In addition, since the control valve is provided in each of the separate exhaust pipes, the exhaust pressure of each of the separate exhaust pipes can be adjusted independently, so that the first source gas and the second source gas having different molecular weights can be exhausted with a uniform displacement, and each injection area It is possible to effectively adjust the exhaust amount and the exhaust pressure for the film can be improved.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited to or limited by the embodiments. In describing the present invention, a detailed description of well-known functions or constructions may be omitted for clarity of the present invention.

Hereinafter, an atomic layer deposition apparatus 100 according to an embodiment of the present invention will be described in detail with reference to FIGS. 1 to 4. For reference, FIGS. 1 to 3 are views for explaining the exhaust of the atomic layer deposition apparatus according to an embodiment of the present invention, Figure 1 is a perspective view of the atomic layer deposition apparatus 100, Figure 2 is a cross-sectional view 3 is a schematic diagram. 4 is a perspective view illustrating an exhaust separation module 161 separating the exhaust gas flow path of the tower exhaust unit 106 in the atomic layer deposition apparatus 100 of FIGS. 1 to 3.

Referring to the drawings, an atomic layer deposition apparatus (ALD) 100 is composed of a process chamber 101 in which a process is performed and an exhaust unit for exhausting the exhaust gas from the process chamber 101.

Here, the susceptor 102 on which the plurality of substrates 10 are seated and the shower head 103 for providing the deposition gas to the substrate 10 are provided in the process chamber 101, and the exhaust part is the showerhead 103. Connected to the top vacuum 106 and the lower part of the process chamber 101 to suck and discharge the exhaust gas from the upper part of the process chamber 101. And a chamber vacuum 107 for discharging.

Referring to FIG. 2, in the atomic layer deposition apparatus 100, deposition is simultaneously performed on a plurality of substrates 10 in order to improve throughput. A semi-batch type may be used in which the deposition is performed by the deposition. In addition, in the present embodiment, the substrate 10 to be deposited may be a silicon wafer. However, the object of the present invention is not limited to the silicon wafer, and the substrate 10 may be a transparent substrate including glass used for a flat panel display device such as a liquid crystal display (LCD) and a plasma display panel (PDP). . In addition, the shape and size of the substrate 10 is not limited by the drawings, and may have substantially various shapes and sizes, such as a circle and a rectangle. Here, since the detailed technical configuration of the atomic layer deposition apparatus 100 is not the gist of the present invention, the detailed description and illustration are omitted and only the main components will be briefly described.

The process chamber 101 accommodates a plurality of substrates 10 to provide a space and environment in which an atomic layer deposition process is performed.

The susceptor 102 is provided inside the process chamber 101 so that the substrate 10 may be seated and rotated at a predetermined speed during the deposition process. For example, the susceptor 102 may be formed such that six substrates 10 are horizontally mounted along the circumferential direction of the susceptor 102.

The shower head 103 is provided on the susceptor 102, and a plurality of injection holes 131 are formed to inject deposition gas onto the substrate 10, and provide the deposition gas to the substrate 10.

In the present embodiment, the "deposition gas" is a gas for depositing a thin film, at least one source gas or reactant and a substrate including a source material constituting the thin film to be deposited on the substrate 10. (10) It includes a purge gas (purge gas) for removing the remaining gas except the reactants chemisorbed on the surface. In the present embodiment, an example using two kinds of source gas and one kind of purge gas will be described. However, the present invention is not limited thereto, and it is also possible to use two or more kinds of source gases or two or more kinds of purge gases.

The shower head 103 is formed with regions where the source gas and the purge gas are respectively injected, and as the susceptor 102 rotates, the thin film is deposited as the substrate 10 sequentially passes through the region where the deposition gas is injected. As the substrate 10 revolves once, one cycle in which the monoatomic layer is deposited is performed, and a thin film having a predetermined thickness is deposited while the deposition cycle is repeatedly performed a plurality of times according to the number of revolutions of the substrate 10. For example, as shown in FIG. 3, the shower head 103 has four sectors having a fan shape, and includes a first source region in which the first source gas is injected along the moving direction of the substrate 10. SA1), a first purge region PA1 through which purge gas is injected, a second source region SA2 through which second source gas is injected, and a second purge region PA2 through which purge gas is injected. And a plurality of exhaust holes formed to separate the respective injection regions SA1, PA1, SA2, and PA2 between each injection regions SA1, PA1, SA2, and PA2 and to discharge the exhaust gas inside the process chamber 101. An exhaust line 104 is provided. For example, the exhaust line 104 is formed in two 'V' shapes having vertices facing each other at the central portion of the shower head 103 so as to divide the shower head 103 into four fan shapes. Can be.

On the other hand, the exhaust line 104 is connected to the exhaust duct 105 and the top exhaust 106 to discharge the sucked exhaust gas. Exhaust duct 105 is provided in communication with the exhaust line 104 in the upper center of the process chamber 101 to form a discharge flow path of the exhaust gas sucked in the exhaust line 104, the top exhaust 106 is exhaust exhaust duct The vacuum pressure for suction of the exhaust gas is provided to the 105 and the exhaust line 104, and the exhaust gas sucked through the exhaust duct 105 is discharged.

Here, since the unreacted source gas is included in the exhaust gases sucked from the first and second source regions SA1 and SA2, when the exhaust gases are mixed with each other during the exhaust process, the unreacted source gases included in the exhaust gases are mutually different. In response, particles may be generated. In the present embodiment, the exhaust line 104 and the exhaust duct 105 are exhaust gases in the first and second source regions SA1 and SA2 to prevent the exhaust gases from mixing with each other and generating particles in the exhaust process. It is formed to suck and separate through different flow paths to be discharged.

In detail, two exhaust lines 104 are provided to suck exhaust gases from the first and second source regions SA1 and SA2, respectively, and are sucked from the first source region SA1 inside the exhaust duct 105. The exhaust gas flow path 151 and the two flow paths 151 and 152 serving as the flow path 152 of the exhaust gas sucked in the second source area SA2 are divided into two exhaust lines 104, respectively.

The tower exhaust 106 is formed to separate and discharge the exhaust gas sucked through the exhaust line 104 and the exhaust duct 105 as described above. The tower exhaust section 106 separates two separate exhaust pipes 162 and 163 and exhaust gas connected to the two flow paths 151 and 152 of the exhaust duct 105, respectively, and exhausts each of the separate exhaust pipes 162 and 163. It consists of a separation module 161 for adjusting the pressure.

Here, the separation module 161 is a control valve for controlling the displacement and the exhaust pressure of the separation exhaust pipe (162, 163), it is provided to connect the separation exhaust pipe (162, 163) to the exhaust duct 105. . For example, as shown in FIG. 4, the separation module 161 may connect two internal flow paths 611 and 152 to connect the flow paths 151 and 152 of the exhaust duct 105 and the separation exhaust pipes 162 and 163, respectively. 621 and the internal flow paths 611 and 621 to adjust the displacement of the housing 601 and the separation exhaust pipes 162 and 163 on which the connection flow paths 623 (the illustration of the opposite connection flow path of 623 in FIG. 4 is omitted) are formed. A dog opening adjustment unit 612, 622 for adjusting the opening degree may be formed. In addition, the separation module 161 may be connected to a plurality of separation exhaust pipes 162 and 163 at the same time, and may be formed as a single module so as to individually control the displacement and the exhaust pressure of each separation exhaust pipe 162 and 163. However, the present invention is not limited by the drawings, and the separation module 161 may be formed of a plurality of objects to be provided in each of the separation exhaust pipes 162 and 163, respectively.

Hereinafter, for convenience of description, the configuration of the internal flow paths 611 and 621, the connection flow path 623, and the opening degree adjusting units 612 and 622 will be referred to as “control units 610 and 620”. That is, the control units 610 and 620 serve as control valves for adjusting the exhaust pressures of the separate exhaust pipes 162 and 163 and the first and second source regions SA1 and SA2.

According to the present exemplary embodiment, since the control units 610 and 620 are provided in the separate exhaust pipes 162 and 163, respectively, the displacements of the separate exhaust pipes 162 and 163 and the first and second source regions SA1 and SA2 may be adjusted. Can be adjusted independently of each other. In this case, the first and second source gases are generally used gas having a different molecular weight. Therefore, when the same exhaust pressure is applied to the first and second source regions SA1 and SA2, the displacements actually acting on the first and second source regions SA1 and SA2 due to the difference in molecular weight of the first and second source gases. Will be different. However, according to the present embodiment, since the separation module 161 includes control units 610 and 620 that are independently controlled in the separation exhaust pipes 162 and 163, the displacement amount of the first and second source areas SA1 and SA2 is reduced. And the exhaust pressure can be appropriately adjusted, and the exhaust volume of the first and second source regions SA1 and SA2 can be kept constant according to the actual exhaust volume.

However, the present invention is not limited by the drawings, and the configuration and shape of the separation module 161 may be changed in various ways.

On the other hand, since the top exhaust portion 106 is formed to suck and discharge the exhaust gas through the shower head 103, the exhaust pipe diameter is relatively small and the flow rate is slow, the flow rate and the opening degree is sharp before the control valve for adjusting the opening degree of the exhaust pipe Will decrease. As a result, a portion that is greatly affected when particles are generated in the exhaust pipe of the tower exhaust 106 becomes a section before the control valve. In the present embodiment, the tower exhaust unit 106 is formed to separate and exhaust the flow paths of the exhaust gas sucked from the separation module 161 serving as the control valve and the first and second source areas SA1 and SA2. It is possible to prevent the generation of particles and to block the flow path.

After passing through the separation module 161, two separation exhaust pipes 162 and 163 are connected to one converging exhaust pipe 164 so that the exhaust gas is discharged through one pipe since the separation module 161 is not significantly affected. Can be converged.

The chamber exhaust unit 107 is provided at one side of the process chamber 101 to suck and exhaust the exhaust gas from the lower portion of the process chamber 101. In particular, the chamber exhaust 107 serves to adjust and maintain the pressure inside the process chamber 101.

Here, the chamber exhaust 107 sucks the exhaust gas through the process chamber 101 and maintains a vacuum, so that the diameters of the chamber exhaust pipes 171 and 173 are larger than those of the tower exhaust 106 and the chamber exhaust pipes 171 and 173 are larger. The flow rate of exhaust gas discharged through) is high and the flow rate is fast. As a result, the chamber exhaust unit 107 may prevent particle generation due to mixing of the first and second source gases in the chamber exhaust pipes 171 and 173, and even if particles are generated, the front of the control valve 172 may be prevented. The degree of opening can be prevented from changing.

Meanwhile, the chamber exhaust unit 107 adjusts the pressure inside the process chamber 101 through the pressure discharged from the tower exhaust unit 106. That is, the exhaust gas exhausted from the tower exhaust unit 106 is connected to join the chamber exhaust unit 107, and in detail, the converging exhaust pipe 164 of the tower exhaust unit 106 is a chamber of the chamber exhaust unit 107. Is connected to the exhaust pipe 173. Here, the chamber exhaust unit 107 is a chamber exhaust unit (106) so that the pressure in the process chamber 101 can be accurately adjusted without being affected by the exhaust gas converged in the tower exhaust unit (106). In the chamber exhaust pipes 171, 173 of 107 are connected after the control valve 172. In addition, an angle valve 165 may be provided at the converging exhaust pipe 164 of the tower exhaust 106 to be connected to the chamber exhaust pipe 173 of the chamber exhaust 107. The exhaust gas discharged through the chamber exhaust unit 107 and the exhaust gas discharged through the tower exhaust unit 106 converge on the chamber exhaust pipe 173 of the chamber exhaust unit 107 to process through the discharge tube 175. The final discharge to the outside of the chamber 101 is performed. Here, the reference numeral 174 is an exhaust discharge valve 174 for opening and closing the discharge pipe 175.

According to the present embodiment, since the exhaust gas exhausted from the first and second source regions SA1 and SA2 is separated and discharged, and in particular, the exhaust gas is separated and discharged before the control valve, particle generation inside the exhaust pipe can be prevented, and the exhaust pipe is discharged by the particles. This can prevent the blockage or the opening degree from changing. In addition, it is possible to prevent the pressure change of the process chamber 101 from occurring due to the change in the exhaust pressure or the displacement of the top exhaust part 106, and to maintain the process conditions constant, thereby improving the thin film quality.

As described above, the present invention has been described by specific embodiments such as specific components and the like, but the embodiments and the drawings are provided only to help a more general understanding of the present invention, and the present invention is limited to the above-described embodiments. In other words, various modifications and variations are possible to those skilled in the art to which the present invention pertains. Therefore, the spirit of the present invention should not be limited to the above-described embodiments, and all the things that are equivalent to or equivalent to the scope of the claims as well as the claims to be described later belong to the scope of the present invention.

1 is a perspective view for explaining the exhaust in the atomic layer deposition apparatus according to an embodiment of the present invention;

2 is a cross-sectional view of the atomic layer deposition apparatus of FIG.

3 is a schematic view for explaining the configuration of the exhaust unit in the atomic layer deposition apparatus of FIG.

4 is a perspective view illustrating an example of an exhaust separation module for separating an exhaust gas flow path of a tower exhaust in the atomic layer deposition apparatus of FIGS. 1 to 3.

<Explanation of symbols for the main parts of the drawings>

10: substrate 100: atomic layer deposition apparatus

101: process chamber 102: susceptor

103: shower head 104: top vacuum

105: exhaust duct 106: top vacuum

107: chamber lower vacuum

151, 152: exhaust passage 161: exhaust separation module

162, 163: separate exhaust pipe 164: convergent exhaust pipe

165: angle valve 171, 173: chamber exhaust pipe

172: control valve 174: exhaust discharge valve

175: discharge tube 601: housing

610 and 620: control unit 611 and 621: internal flow path

612, 622: opening degree adjusting section 623: connecting flow path

Claims (10)

In the exhaust unit for injecting and exhausting the exhaust gas in a plurality of injection zones in which different source gas is injected in the atomic layer deposition apparatus, the exhaust portion includes a tower exhaust portion connected to the shower head to discharge the exhaust gas, Top exhaust part, A plurality of separate exhaust pipes configured to discharge the exhaust gases exhausted from the respective injection zones of the shower head through independent flow paths; And A separation module provided to connect the respective separation exhaust pipes to the shower head, and controlling the pressure and the displacement of each separation exhaust pipe; Including, The separation module, A plurality of internal flow paths to which the separate exhaust pipes are respectively connected; And A plurality of control unit for individually adjusting the opening degree of the inner passage; Exhaust unit of the atomic layer deposition apparatus comprising a. delete The method of claim 1, A chamber exhaust unit for exhausting the exhaust gas from the process chamber and adjusting the pressure inside the process chamber, The tower exhaust portion exhaust portion of the atomic layer deposition apparatus is the separation exhaust pipe is converged to one converging exhaust pipe and connected to the chamber exhaust. The method of claim 3, And an angle valve for connecting the converging exhaust pipe and the chamber exhaust to the converging exhaust pipe. Process chambers; A shower head provided in the process chamber and having a plurality of injection regions formed therein to inject different source gases to the substrate; And A tower exhaust part connected to the shower head to suck and exhaust the exhaust gas from each injection area; Including, The tower exhaust unit, A plurality of separate exhaust pipes configured to discharge the exhaust gas exhausted from the respective injection zones through independent flow paths; And A separation module provided to connect the process chamber or the shower head and the separation exhaust pipe, and controlling a pressure and an exhaust amount of each separation exhaust pipe; Including, The separation module, A plurality of internal flow paths connected to the shower heads and communicating with the separate exhaust pipes so that the exhaust gases sucked in the respective injection zones can flow independently of each other; And A plurality of control units provided in the respective inner passages to individually adjust the opening degree of the respective inner passages; Atomic layer deposition apparatus comprising a. delete The method of claim 5, And the separation module is modularized to be connected to the plurality of separation exhaust pipes at the same time. The method of claim 5, The shower head is provided with an exhaust line defined by a plurality of exhaust holes formed to suck and exhaust the exhaust gas inside the process chamber, The exhaust line is provided with a plurality of exhaust lines along the boundary of the injection region to exhaust the exhaust gas in each of the injection zone, The separation module is an atomic layer deposition apparatus for connecting the respective exhaust line and each separation exhaust pipe. The method of claim 5, A chamber exhaust part connected to the process chamber to discharge exhaust gas from the process chamber and regulate pressure in the process chamber; The chamber exhaust unit, A chamber exhaust pipe connected to the process chamber to exhaust the exhaust gas; And A control valve provided on the chamber exhaust pipe passage to adjust an opening degree of the chamber exhaust pipe; Atomic layer deposition apparatus comprising a. 10. The method of claim 9, The tower exhaust is formed such that the plurality of separate exhaust pipes converge to one convergent exhaust pipe, The converging exhaust pipe is connected to the chamber exhaust pipe after the control valve in the chamber exhaust.

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