KR101054790B1 - Leds comprising electrode pattern for enhancing the efficiency - Google Patents

Abstract

PURPOSE: A semiconductor light emitting device with an electrode pattern is provided to control the generation of heat inside a semiconductor light emitting device without the elimination of a part of the semiconductor light emitting device and maintain a valid radiation area by not removing an active layer area in which the direct reaction of holes and electronics occurs. CONSTITUTION: A first nitride semiconductor layer(120), an active layer(130), a second nitride semiconductor layer(140), and a transparent electrode(150) are successively laminated in a substrate. A pair of first electrodes(160) is electrically touched with the first nitride semiconductor layer. A pair of second electrodes(170) is formed on the transparent electrode. The first electrode and the second electrode comprises a main electrode, which is parallel to one side edge of the transparent electrode, the first side end and the second side end of the main electrode, a first side end branch, which is perpendicularly projected to the same direction from the middle of the main electrode, a second side end branch, and a middle branch. The second side end branch comprises a horizontal part, which is connected to the outer part from the end of the vertical part, to be parallel with the vertical part and the main electrode which is perpendicularity to the main electrode.

Description

Semiconductor light emitting device including an electrode pattern for improving light efficiency

The present invention relates to a semiconductor light emitting device including an electrode pattern for improving the light efficiency, and more particularly to a semiconductor light emitting device that can improve the performance and reliability by forming an electrode pattern that can minimize current congestion will be.

In recent years, semiconductor light emitting device technology has been significantly developed to consider the application as an illumination light source.

However, in order for a light emitting device to replace an incandescent light source, it is necessary to provide a large area and high brightness output while maintaining the reliability, low power consumption, and low manufacturing cost of the semiconductor light emitting device itself. In particular, large area is required to enter the stable lighting industry, but due to the constraint that it is difficult to distribute the current uniformly over the entire structure as the chip size increases, many research institutes and companies are trying to develop lighting light sources of light emitting devices. I'm having a hard time.

If the current is unevenly injected into the semiconductor light emitting device, the unevenly injected current may accumulate in certain portions of the semiconductor light emitting device, preventing the efficient use of the light emitting semiconducting material, which is referred to as "current congestion." crowding ".

Current congestion tends to occur at the ends of the electrical contacts of the semiconductor light emitting device because of the tendency of charge carriers to move in the path of least resistance, and any area of electrical contacts that depends on the capacitance for each of the regions that receive and spread current. It also occurs in the field.

This current congestion causes unstable beams of light and dark portions on the semiconductor light emitting device, and more current is injected into the semiconductor light emitting device, thereby increasing power consumption and insulating the semiconductor light emitting device. Can cause. That is, there is a problem that light is not emitted efficiently and power consumption is increased.

In addition, the larger size semiconductor light emitting devices currently available include additional constraints that contribute additionally to their limited power and limited luminous flux output, which include inefficient heat dissipation, poor optical enhancement, and equipment. A limited number of light emitting regions are included that result in high light resorption within the structure.

1- (a) is a plan view showing an embodiment of a conventional semiconductor light emitting device in which electrode patterns are formed to reduce current congestion and inefficient heat dissipation, and FIG. 1- (b) is a semiconductor of FIG. 1- (a) 1-(c) is a diagram showing the internal quantum efficiency (IQE) of the semiconductor light emitting device of Figure 1 (a).

Referring to FIGS. 1- (a) and 1- (b), a conventional semiconductor light emitting device in which electrode patterns are formed to reduce current congestion and inefficient heat dissipation is sequentially grown on a substrate 100 and a substrate 100. A buffer layer 110, a first nitride semiconductor layer (n-type nitride semiconductor layer 120), an active layer 130, a second nitride semiconductor layer (p-type nitride semiconductor layer 140), a transparent electrode 150, and The first electrode (n-type electrode) formed on the first nitride semiconductor layer 120 where the second electrode (p-type electrode 170), the second nitride semiconductor layer 140, and the active layer 130 are etched and exposed. 160).

In particular, the removal portion 180 having the transparent electrode 150 or at least the active layer 130 removed is formed in the center of the semiconductor light emitting device, and the second electrode 170 is formed around the edge of the device and the removal portion 180. The first electrode 160, which is a counter electrode, is formed inside the element to face the second electrode 170.

In this case, as compared with a general semiconductor light emitting device, heat generation inside the device can be suppressed and current congestion can be reduced. However, the removal portion 180 reduces the area of the active layer 130 where the recombination reaction between electrons and holes occurs. As a result, the effective light emitting area is reduced and still does not spread the current uniformly, as shown in Fig. 1- (c), the lower and upper side internal quantum efficiency (photons made for the number of injected and recombined electrons) Ratios).

As a result, even when the electrode pattern of the device is formed, as in the semiconductor light emitting device of FIG. In order to develop LED chips of high power, high luminous flux, it is necessary to design an electrode pattern that can solve the above problems.

The present invention has been made to solve such a conventional problem, through the efficient positioning of the electrode, the early light saturation problem, localized light distribution and resulting heat generation, high power consumption due to uneven current distribution It is an object to solve the problems, such as to improve the performance and reliability of the semiconductor light emitting device.

The semiconductor light emitting device including the electrode pattern for improving the light efficiency according to the present invention for solving the above-described control is a substrate in which the first nitride semiconductor layer, the active layer, the second nitride semiconductor layer, and the transparent electrode are sequentially stacked; A pair of first electrodes in electrical contact with the one nitride semiconductor layer, and a pair of second electrodes formed on the transparent electrode.

At this time, the first electrode and the second electrode is a main electrode parallel to one edge of the transparent electrode, and the first side end, the second side end, the first side end branch protruding vertically in the same direction from the middle, A second side end branch may include a middle end branch, and the second side end branch may include a vertical part perpendicular to the main electrode, and a horizontal part connected outwardly from an end of the vertical part to be parallel to the main electrode.

In addition, the first electrode may be disposed such that the corner portion where the first side branch and the main electrode are perpendicular to the two corner portions positioned diagonally among the four corners of the transparent electrode.

In addition, the second electrode is formed along the edge of the transparent electrode such that the corner portion where the first side branch and the main electrode are perpendicular to each other corresponds to two corner portions where the first electrode is not located among the four corners of the transparent electrode. It may be formed on the transparent electrode, respectively.

In addition, each of the first electrode and the second electrode may form a pattern in which the horizontal portion is positioned between the first side end branch and the middle branch of the counter electrode.

In addition, the first electrode and the second electrode may have a pattern in which the first side end and the counter electrode are arranged in parallel so that the distance between the horizontal and intermediate branches of the counter electrode and the intermediate and vertical branches is a constant distance. Can be formed.

In addition, the pair of first electrodes may further include a connection part connecting the middle branches to each other.

In addition, the pair of second electrodes may further include a connection part connecting the intermediate branches to each other.

In this case, the connection part may have a straight line shape parallel to the main electrodes and perpendicular to the middle branches with respect to the pair of electrodes, and may connect the middle branches at the ends of the middle branches.

In addition, the first electrode and the second electrode may include a bonding electrode at a point where the intermediate branch and the main electrode meet.

Due to this configuration, heat generation inside the device can be suppressed without removing a part of the semiconductor light emitting device, and thus the effective light emitting area can be maintained without removing the active layer region where direct reaction between electrons and holes occurs.

In addition, by configuring two electrodes having the same electrode characteristics in the position opposite to each other, it is possible to induce a uniform dispersion of the current, so that early light saturation problem caused by uneven current distribution, local light distribution and Problems such as heat generation, high power consumption, etc. can be solved, thereby improving luminance characteristics and light extraction efficiency of the semiconductor light emitting device and at the same time improving the characteristics and reliability of the device.

According to the present invention, an electrode pattern composed of a pair of electrodes facing each other diagonally and another pair of electrodes facing each other diagonally with respect to the center of the semiconductor light emitting device is designed so that a part of the semiconductor light emitting device It is possible to suppress the generation of heat inside the device without removing the active material, and does not remove the active layer region in which direct reaction between electrons and holes occurs, thereby maintaining an effective light emitting area.

In addition, by configuring two electrodes having the same electrode characteristics in the position opposite to each other, it is possible to induce a uniform dispersion of the current, so that early light saturation problem caused by uneven current distribution, local light distribution and Problems such as heat generation, high power consumption, etc. can be solved, thereby improving luminance characteristics and light extraction efficiency of the semiconductor light emitting device and at the same time improving the characteristics and reliability of the device.

1- (a) is a plan view showing an embodiment of a conventional semiconductor light emitting device in which electrode patterns are formed to reduce current congestion and inefficient heat dissipation;
1- (b) is a cross-sectional view along the AA ′ line of the semiconductor light emitting device of FIGS. 1- (a).
1- (c) is a diagram showing the internal quantum efficiency (IQE) of the semiconductor light emitting device of FIG. 1- (a).
2- (a) is a plan view showing a preferred embodiment of a semiconductor light emitting device including an electrode pattern according to the present invention.
Fig. 2- (b) shows the internal quantum efficiency (IQE) of the semiconductor light emitting device of Fig. 2- (a).
3- (a) shows one embodiment of an n-type electrode 160 in accordance with the present invention.
3- (b) shows one embodiment of a p-type electrode 170 in accordance with the present invention.
4- (a) is a plan view showing a first modified embodiment of the semiconductor light emitting device including the electrode pattern according to the present invention.
Fig. 4- (b) shows the internal quantum efficiency (IQE) of the semiconductor light emitting device of Fig. 4- (a).
5 is a plan view showing a second modified embodiment of the semiconductor light emitting device including the electrode pattern according to the present invention.
6- (a) are graphs showing forward voltage characteristics of the semiconductor light emitting devices of FIGS. 2, 4, and 5;
6- (b) is an enlarged view of a portion corresponding to a forward voltage of about 4.6V in the graph of FIG. 6- (a).
7 is a graph illustrating temperature characteristics of the semiconductor light emitting devices of FIGS. 2, 4, and 5;

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. In order to more clearly understand the present invention, the same reference numerals are used for the same components in different drawings.

2- (a) is a plan view showing a preferred embodiment of a semiconductor light emitting device including an electrode pattern according to the present invention.

The semiconductor light emitting device according to the present invention, like the semiconductor light emitting device of FIG. 1 described above, has a buffer layer 110, a first nitride semiconductor layer 120, an active layer 130, and a second nitride semiconductor layer 140 on a substrate 100. ), And the transparent electrode 150 may be sequentially formed, and the transparent electrode 150 may be formed on almost the entire surface of the second nitride semiconductor layer 140.

In addition, the first electrode 160 is formed on the first nitride semiconductor layer 120 where the second nitride semiconductor layer 140 and the active layer 130 are etched and exposed, and the second electrode 170 is a transparent electrode 150. It can be formed on).

Hereinafter, the first nitride semiconductor layer 120 is an n-type nitride semiconductor layer, the second nitride semiconductor layer 140 is a p-type nitride semiconductor layer, the first electrode 160 is an n-type electrode, and the second electrode is Reference numeral 170 is set to be a p-type electrode.

(The first nitride semiconductor layer 120 may be a p-type nitride semiconductor layer, and the second nitride semiconductor layer 140 may be an n-type nitride semiconductor layer. In this case, the first electrode 160 may be p-type. As an electrode, the second electrode 170 may be set as an n-type electrode.)

The semiconductor light emitting device according to the present invention includes an electrode pattern designed to improve the light efficiency by adjusting the positions of the pair of p-type electrodes 170 and the pair of n-type electrodes 160.

The electrode pattern may be formed as a pair of p-type electrodes 170 facing in the diagonal direction and a pair of n-type electrodes 160 facing in the other diagonal direction with respect to the center of the semiconductor light emitting device as a whole. .

3- (a) shows an embodiment of an n-type electrode 160 according to the present invention, and FIG. 3- (b) shows an embodiment of a p-type electrode 170 according to the present invention. One drawing.

Referring to FIG. 3- (a), the n-type electrode 160 has a length of about 1/2 of the length of one edge of the transparent electrode 150, a first side end of the main electrode 200, The second side end portion may be formed in a shape including a first side end branch 210, a second side end branch 220, and a middle branch 230 protruding vertically in the same direction from the middle (eg, in the form of a trident). Can be.

In this case, the second side end branch 220 is horizontal with the vertical portion 222 and the main electrode 200 which are perpendicular to the main electrode 200, and vertically outward from the end of the vertical portion 222. By including a horizontal portion 224 is formed and connected, it can be formed to be bent in the vertical direction outward from the middle as a whole.

In addition, a bonding electrode 240 may be formed at a point where the middle branch 230 and the main electrode 200 meet each other.

In addition, referring to FIG. 3- (b), the p-type electrode 170, like the n-type electrode 160, is about 1/2 the length of the main electrode 300 with respect to the length of one edge of the transparent electrode 150. The first side end of the main electrode 300, the second side end, including a first side end branch 310, a second side end branch 320, a middle branch 330 which protrudes vertically in the same direction from the middle It may be formed in the form (eg, trident).

In this case, the second side end branch 320 is horizontal with the vertical portion 322 and the main electrode 300 which are perpendicular to the main electrode 300, and vertically outward from the end of the vertical portion 322. By including a horizontal portion 324 is formed and connected, it can be formed to be bent in the vertical direction outward from the middle as a whole.

In addition, a bonding electrode 340 may be formed at the point where the middle branch 330 and the main electrode 300 meet each other.

Referring again to FIG. 2- (a), the pair of n-type electrodes 160 includes a corner portion 212 where the first side branch 210 and the main electrode 200 are perpendicular to each other. Each of the four corners 152, 154, 156, and 158 of the electrode 150 may be disposed along the edge of the transparent electrode 150 so as to correspond to the two corner portions 152 and 156 positioned diagonally. have.

In addition, the pair of p-type electrodes 170 may include four corners 152 of the transparent electrode 150 having a corner portion 312 where the first side branch 310 and the main electrode 300 are perpendicular to each other. , 154, 156, and 158 to be formed on the transparent electrode 150 along the edge of the transparent electrode 150 so as to correspond to two corner portions 154 and 158 where the n-type electrode 160 is not located. Can be.

In this case, the branches of the n-type electrode 160 and the p-type electrode 170 may be alternately positioned. That is, the horizontal portion 224 of the n-type electrode 160 may be located between the first side branch 310 and the intermediate branch 330 of the p-type electrode 170, and the horizontal of the p-type electrode 170 The portion 324 may be positioned between the first side branch 210 and the middle branch 230 of the n-type electrode 160.

In addition, in order to prevent the current from being partially concentrated, the distance between the first side end branch 210 of the n-type electrode 160 and the horizontal portion 324 of the p-type electrode 170 and the p-type electrode 170 Distance between the horizontal portion 324 of the n-type electrode 160 and the middle branch 230 of the n-type electrode 160, and the vertical portion 222 of the middle branch 230 of the n-type electrode 160 and the n-type electrode 160. The distance between the two may be formed to be a constant distance, it is preferable that the four branches 210, 324, 230, 222 are parallel to each other.

Similarly, the distance between the first side edge 310 of the p-type electrode 170 and the horizontal portion 224 of the n-type electrode 160, the horizontal portion 224 of the n-type electrode 160 and the p-type electrode ( The distance between the middle branch 330 of the 170, and the distance between the middle branch 330 of the p-type electrode 170 and the vertical portion 322 of the p-type electrode 170 may be formed to be a constant distance, These four branches 310, 224, 330, 322 would preferably be parallel to each other.

From the form of the branches of the two electrodes 160 and 170 as described above, the length of the vertical portions 222 and 322 of each electrode is equal to the horizontal portions 224 of the second side edges 220 and 320. It will be preferred that the length 324 be between the first side branches 310, 210 and the intermediate branches 330, 230 of the counter electrode and the distance between the electrodes be a constant distance.

2B is a diagram showing the internal quantum efficiency IQE of the semiconductor light emitting device of FIG.

The internal quantum efficiency refers to the ratio of photons made to the number of electrons injected and recombined into the semiconductor light emitting device, and can also be expressed as the ratio of excited energy to light.

 It can be seen from FIG. 2- (b) that the imbalance of the lower and upper side internal quantum efficiencies of the elements in the figure as shown in FIGS. 1- (c) is alleviated, so that the device of FIG. It can be seen that the efficiency is higher than that of the conventional device of 1- (a).

4A is a plan view illustrating a first modified embodiment of the semiconductor light emitting device including the electrode pattern according to the present invention, and FIG. 4B is an internal quantum of the semiconductor light emitting device of FIG. 5 is a plan view showing a second modified embodiment of the semiconductor light emitting device including the electrode pattern according to the present invention.

In FIGS. 4- (a) and 5, the connecting parts 250 and 350 are further included in the electrode pattern of FIGS. 2- (a). The connecting parts 250 and 350 may include a pair of electrodes 160, 170, a straight line parallel to the main electrodes, perpendicular to the middle branches, and may be formed to connect the middle branches at the ends of the middle branches.

That is, referring to FIG. 4- (a), in the pair of p-type electrodes 170 of the electrode pattern of FIG. 2- (a), the connection portion 350 is the middle branches 330 of the p-type electrodes 170. ) Are connected to each other, and because of this connection portion 350, the area of the p-type electrode 170 is relatively larger than the area of the n-type electrode 160, it is possible to increase the degree of movement of the carrier This may be due to widening the effective area of light emission.

Referring to FIG. 4- (b), it can be seen that the electrode pattern of FIG. 4- (a) is also unbalanced in the internal quantum efficiency of the lower and upper elements of the device as shown in FIGS. 1- (c). 4 (a) also show that the efficiency is higher than that of the conventional device shown in FIG. 1- (a).

In addition, referring to FIG. 5, in the pair of n-type electrodes 160 of the electrode pattern of FIG. 2- (a), the connection part 250 connects the middle branches 230 of the n-type electrodes 160 to each other. It can be seen that, because of this connection portion 250, the area of the n-type electrode 160 is relatively larger than the area of the p-type electrode 170, as in Figure 4- (a), the movement of the carrier The degree can be increased, and it can be attributable to widening the effective area of light emission.

As described above, in FIGS. 2 to 5, since the first and second side ends of the main electrodes 200 and 300 are set to the left and right side ends of the main electrodes 200 and 300, respectively, the first side branch ( The 210 and 310 and the second side branches 220 and 320 may mean left and right branches, respectively, and the outward direction in which the second side branches 220 and 320 are bent vertically becomes right. something to do.

However, the first side end and the second side end may be set to the right side end and the left side end of the main electrodes 200 and 300, respectively, in this case, the first side end branches 220 and 320 and the second side end branches 210, respectively. 310 may mean a right branch and a left branch, respectively, and it may be preferable that the outward direction in which the second side branches 220 and 320 bend vertically becomes left.

6- (a) is a graph showing forward voltage characteristics of the semiconductor light emitting devices of FIGS. 1, 2, and 4, and FIG. 6- (b) is about 4.6V in the graph of FIG. 6- (a). Is an enlarged view of a portion corresponding to a forward voltage of?

A graph represented by a "■" dot represents a graph of the semiconductor light emitting device of FIG. 1, a graph represented by a "●" dot represents a graph of the semiconductor light emitting device of FIG. 2, and a graph represented by a "▲" dot is FIG. 4. Shows a graph of a semiconductor light emitting device.

6- (b), when forward voltage of about 4.6V is applied to each semiconductor light emitting device (exactly, 4.68V, 4.65V, and 4.64V are applied in the order of FIGS. 1, 2, and 4, respectively). 2 and 4 show a larger amount of current flowing than the device of FIG. 1 (FIGS. 2 and 4 have a current of about 350 mA and FIG. 1 has a current of about 325 mA).

Semiconductor light emitting diodes (LEDs) are light emitting diodes (Diode) due to the characteristics of the diode and match the electrical polarity, the current rapidly increases above a certain voltage, brightness has a unique characteristic that is directly proportional to the magnitude of the current, Figures 2 and 4 Since the semiconductor light emitting device of FIG. 1 can flow more current at the same voltage than that of the semiconductor light emitting device of FIG. 1 to increase the brightness, it can be confirmed from the present invention that a highly efficient semiconductor light emitting device can be manufactured.

7 is a graph illustrating temperature characteristics of the semiconductor light emitting devices of FIGS. 1, 2, and 4, wherein the device of FIG. 1 exhibits an average temperature of 322.9K and a maximum of 325.8K, and the device of FIG. 2 has an average of 322.3. K, a temperature of up to 324.8K, and the device of Figure 4 can be seen that the average of 322.2K, a temperature of up to 324.4K.

For this reason, the elements of FIGS. 2 and 4 according to the present invention, compared to the elements of the prior art of FIG. 1 in which a part of the transparent electrode 150 or the n-type nitride semiconductor layer 140 is removed, generate heat generated inside the element. It can be seen that relatively much can be suppressed.

In conclusion, the semiconductor light emitting device according to the present invention, due to the electrode pattern consisting of a pair of electrodes facing in the diagonal direction and another pair of electrodes facing in the other diagonal direction with respect to the center of the device, It can lead to a uniform dispersion of current.

In addition, due to the electrode pattern, heat generation inside the device can be suppressed without removing a part of the semiconductor light emitting device, and thus, the active light emitting area 130 in which direct reaction between electrons and holes occurs does not have to be removed. Can be maintained.

That is, by constructing two electrodes having the same electrode characteristics at positions opposite to each other, heat generation inside the material can be suppressed even without removing the semiconductor layer, and uniform dispersion of current can be induced, resulting in uneven current. It can solve the problems such as the early light saturation problem caused by the distribution, local light distribution and heat generation phenomenon, high power consumption, etc., improving the brightness characteristics and light extraction efficiency of the semiconductor light emitting device, Reliability can be improved.

So far I looked at the center of the preferred embodiment for the present invention. Those skilled in the art will appreciate that the present invention can be implemented in a modified form without departing from the essential features of the present invention. Therefore, the disclosed embodiments should be considered in descriptive sense only and not for purposes of limitation. The scope of the present invention is shown in the claims rather than the foregoing description, and all differences within the scope will be construed as being included in the present invention.

100 substrate
110 buffer layer
120 first nitride semiconductor layer
130 active layers
140 second nitride semiconductor layer
150 transparent electrodes
152, 154, 156, 158 first, second, third and fourth corners of the transparent electrode
160 first electrode
170 second electrode
180 removal parts
200, 300 main electrodes
210, 310 first side branch
212, 312 Corner portion between the first side branch and the main electrode
220, 320 second side branch
222, 322 Vertical part of the second side branch
224, 324 Horizontal part of second side end branches
230, 330 middle branches
240, 340 bonding electrodes
250, 350 connections

Claims (9)

A substrate in which a first nitride semiconductor layer, an active layer, a second nitride semiconductor layer, and a transparent electrode are sequentially stacked;
A pair of first electrodes in electrical contact with the first nitride semiconductor layer; And
A pair of second electrodes formed on the transparent electrode; Including,
The first electrode and the second electrode,
A main electrode parallel to one edge of the transparent electrode, and a first side end branch, a second side end branch, and a middle branch protruding vertically in the same direction from the first side end, the second side end, and the middle of the main electrode. ,
The second side end has,
A vertical portion perpendicular to the main electrode; And
A horizontal portion connected outwardly from an end of the vertical portion to be parallel to the main electrode; Semiconductor light emitting device comprising an electrode pattern for improving the light efficiency, characterized in that it comprises a. The method of claim 1,
The first electrode,
The electrode pattern for improving the light efficiency, characterized in that the corner portion where the first side branch and the main electrode is perpendicular to the two corner portions disposed in the diagonal direction among the four corners of the transparent electrode. Semiconductor light emitting device comprising a. The method of claim 2,
The second electrode,
The edge portion where the first side branch and the main electrode are perpendicular to each other corresponds to two edge portions of the four corners of the transparent electrode where the first electrode is not located. A semiconductor light emitting device comprising an electrode pattern for improving the light efficiency, characterized in that each formed on the transparent electrode. The method of claim 3, wherein
Each of the first electrode and the second electrode,
And the horizontal portion forms a pattern located between the first side end branch and the middle branch of the counter electrode. The method of claim 4, wherein
The first electrode and the second electrode,
And forming a pattern positioned in parallel so that a distance between the first side end branch and the counter electrode, the horizontal part of the counter electrode and the middle branch, and the distance between the middle branch and the vertical part is a constant distance. A semiconductor light emitting device comprising an electrode pattern for improving the light efficiency. 6. The method of claim 5,
The pair of first electrodes,
A connection part connecting the middle branches to each other; Semiconductor light emitting device comprising an electrode pattern for improving the light efficiency, characterized in that it further comprises. 6. The method of claim 5,
The pair of second electrodes,
A connection part connecting the middle branches to each other; Semiconductor light emitting device comprising an electrode pattern for improving the light efficiency, characterized in that it further comprises. The method according to claim 6 or 7,
The connecting portion,
The electrode pattern for improving the light efficiency, characterized in that for a pair of electrodes, parallel to the main electrodes, a straight line perpendicular to the middle branches, connecting the intermediate branches at the ends of the intermediate branches. Semiconductor light emitting device comprising. The method of claim 1,
The first electrode and the second electrode,
A semiconductor light emitting device comprising an electrode pattern for improving light efficiency, comprising a bonding electrode at a point where the intermediate branch and the main electrode meet.

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