KR101015843B1 - 유기 발광 조명 장치 - Google Patents
유기 발광 조명 장치 Download PDFInfo
- Publication number
- KR101015843B1 KR101015843B1 KR1020090103763A KR20090103763A KR101015843B1 KR 101015843 B1 KR101015843 B1 KR 101015843B1 KR 1020090103763 A KR1020090103763 A KR 1020090103763A KR 20090103763 A KR20090103763 A KR 20090103763A KR 101015843 B1 KR101015843 B1 KR 101015843B1
- Authority
- KR
- South Korea
- Prior art keywords
- electrode
- light emitting
- organic light
- auxiliary electrode
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 230000003068 static effect Effects 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 20
- 230000004888 barrier function Effects 0.000 claims description 11
- 238000000926 separation method Methods 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 7
- 239000004033 plastic Substances 0.000 claims description 7
- 229920003023 plastic Polymers 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 5
- 239000012780 transparent material Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 4
- 239000010410 layer Substances 0.000 description 57
- 238000002347 injection Methods 0.000 description 12
- 239000007924 injection Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 9
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 8
- 239000004020 conductor Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000011575 calcium Substances 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- -1 Polyethylene Polymers 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/145—Organic substrates, e.g. plastic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/816—Multilayers, e.g. transparent multilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/87—Arrangements for heating or cooling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/878—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80516—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80517—Multilayers, e.g. transparent multilayers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (15)
- 복수의 그루브 라인(groove line)들이 형성된 투명한 기판 본체;상기 복수의 그루브 라인들에 형성된 보조 전극;상기 기판 본체 상에 형성된 제1 전극;상기 보조 전극과 상기 제1 전극을 서로 연결하는 정특성 서미스터(positive temperature coefficient, PTC);상기 제1 전극 상에 형성된 유기 발광층; 그리고상기 유기 발광층 상에 형성된 제2 전극을 포함하는 유기 발광 조명 장치.
- 제1항에서,상기 정특성 서미스터는 한 쌍의 저항 전극들과 상기 한 쌍의 저항 전극들 사이에 배치된 폴리머층을 포함하는 유기 발광 조명 장치.
- 제1항에서,상기 정특성 서미스터는 상기 복수의 그루브 라인들 상에 형성된 유기 발광 조명 장치.
- 제1항에서,상기 정특성 서미스터 가장자리를 둘러싸는 서미스터 절연층을 더 포함하는 유기 발광 조명 장치.
- 제1항에서,상기 정특성 서미스터는 상기 보조 전극과 함께 상기 복수의 그루브 라인들 내에 형성된 유기 발광 조명 장치.
- 제1항 내지 제5항 중 어느 한 항에서,상기 보조 전극은 2㎛ 내지 100㎛ 범위 내의 두께를 갖는 유기 발광 조명 장치.
- 제6항에서,상기 복수의 그루브 라인들은 상기 기판 본체의 두께와 대비하여 50% 미만의 깊이를 갖는 유기 발광 조명 장치.
- 제6항에서,상기 보조 전극은 1㎛ 내지 50㎛ 범위 내의 폭을 갖는 유기 발광 조명 장치.
- 제8항에서,상기 보조 전극이 차지하는 전체 면적은 상기 유기 발광층이 실제 발광하는 면적의 15% 이내의 크기를 갖는 유기 발광 조명 장치.
- 제8항에서,상기 제1 전극은 투명 물질로 형성되고,상기 제2 전극은 반사 물질로 형성된 유기 발광 조명 장치.
- 제10항에서,상기 제1 전극은 200nm 보다 작은 두께를 갖는 유기 발광 조명 장치.
- 제10항에서,상기 보조 전극은 도전성 반사 물질을 포함하여 만들어지며,상기 제1 전극보다 비저항이 낮은 물질로 만들어진 유기 발광 조명 장치.
- 제12항에서,상기 기판 본체는 글라스(glass) 계열의 소재를 포함하여 만들어지며,상기 기판 본체는 0.2mm 내지 1.2mm 범위 내의 두께를 갖는 유기 발광 조명 장치.
- 제12항에서,상기 기판 본체는 플라스틱 계열의 소재를 포함하여 만들어지며,상기 기판 본체는 0.01mm 내지 1mm 범위 내의 두께를 갖는 유기 발광 조명 장치.
- 제12항에서,상기 보조 전극과 중첩되도록 상기 제1 전극과 상기 제2 전극 사이에 형성된 분리 격벽층을 더 포함하는 유기 발광 조명 장치.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090103763A KR101015843B1 (ko) | 2009-10-29 | 2009-10-29 | 유기 발광 조명 장치 |
US12/846,731 US8841654B2 (en) | 2009-10-29 | 2010-07-29 | Organic light-emitting diode lighting apparatus |
TW099125566A TWI519205B (zh) | 2009-10-29 | 2010-08-02 | 有機發光二極體發光設備 |
DE102010041113A DE102010041113A1 (de) | 2009-10-29 | 2010-09-21 | Beleuchtungsvorrichtung mit organischen Leutdioden |
US14/460,249 US9331303B2 (en) | 2009-10-29 | 2014-08-14 | Organic light-emitting diode lighting apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090103763A KR101015843B1 (ko) | 2009-10-29 | 2009-10-29 | 유기 발광 조명 장치 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR101015843B1 true KR101015843B1 (ko) | 2011-02-23 |
Family
ID=43777617
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020090103763A Active KR101015843B1 (ko) | 2009-10-29 | 2009-10-29 | 유기 발광 조명 장치 |
Country Status (4)
Country | Link |
---|---|
US (2) | US8841654B2 (ko) |
KR (1) | KR101015843B1 (ko) |
DE (1) | DE102010041113A1 (ko) |
TW (1) | TWI519205B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150132030A (ko) * | 2014-05-15 | 2015-11-25 | 주식회사 엘지화학 | 유기발광소자 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2946796B1 (fr) * | 2009-06-11 | 2011-12-09 | Commissariat Energie Atomique | Dispositif microelectronique dote d'une matrice d'elements a base d'un polymere conducteur a coefficient de temperature positif. |
KR101094300B1 (ko) * | 2009-10-12 | 2011-12-19 | 삼성모바일디스플레이주식회사 | 유기 발광 조명 장치 및 그 제조 방법 |
DE102014115121B4 (de) * | 2014-10-17 | 2023-03-02 | Pictiva Displays International Limited | Optoelektronische Baugruppe und Verfahren zum Herstellen und Betreiben einer optoelektronischen Baugruppe |
CN106782308B (zh) | 2017-02-10 | 2020-05-01 | 上海天马有机发光显示技术有限公司 | 一种具有温度补偿功能的有机发光电路结构 |
KR102415045B1 (ko) | 2017-11-28 | 2022-06-29 | 엘지디스플레이 주식회사 | Oled 조명 장치 |
DE202018101537U1 (de) * | 2018-03-20 | 2019-06-27 | Tridonic Jennersdorf Gmbh | Elektronische Baugruppe mit automatischer Schutzfunktion gegen überhöhte Temperaturen |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09199307A (ja) * | 1996-01-23 | 1997-07-31 | Tdk Corp | 有機質ptcサーミスタ |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW364275B (en) | 1996-03-12 | 1999-07-11 | Idemitsu Kosan Co | Organic electroluminescent element and organic electroluminescent display device |
US5965280A (en) | 1997-03-03 | 1999-10-12 | Hewlett-Packard Company | Patterned polymer electroluminescent devices based on microlithographic processes |
US6713955B1 (en) * | 1998-11-20 | 2004-03-30 | Agilent Technologies, Inc. | Organic light emitting device having a current self-limiting structure |
JP2002108250A (ja) * | 2000-09-29 | 2002-04-10 | Sharp Corp | アクティブマトリックス駆動型自発光表示装置及びその製造方法 |
US6759940B2 (en) | 2002-01-10 | 2004-07-06 | Lamina Ceramics, Inc. | Temperature compensating device with integral sheet thermistors |
US8421715B2 (en) * | 2004-05-21 | 2013-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Display device, driving method thereof and electronic appliance |
JP2006030318A (ja) * | 2004-07-12 | 2006-02-02 | Sanyo Electric Co Ltd | 表示装置 |
JP2006038987A (ja) * | 2004-07-23 | 2006-02-09 | Seiko Epson Corp | 表示装置、表示装置の製造方法、電子機器 |
DE102004057379B3 (de) | 2004-11-26 | 2006-08-10 | Schott Ag | Temperaturstabilisiertes organisches Leuchtelement |
KR101424784B1 (ko) * | 2006-01-10 | 2014-07-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 그의 제조방법 |
JP4793197B2 (ja) | 2006-09-22 | 2011-10-12 | セイコーエプソン株式会社 | 有機エレクトロルミネッセンス装置の製造方法 |
JP2008134577A (ja) | 2006-10-24 | 2008-06-12 | Eastman Kodak Co | 表示装置及びその製造方法 |
CA2675533C (en) * | 2007-01-22 | 2013-09-24 | Panasonic Corporation | Sheet heating element |
-
2009
- 2009-10-29 KR KR1020090103763A patent/KR101015843B1/ko active Active
-
2010
- 2010-07-29 US US12/846,731 patent/US8841654B2/en active Active
- 2010-08-02 TW TW099125566A patent/TWI519205B/zh active
- 2010-09-21 DE DE102010041113A patent/DE102010041113A1/de not_active Withdrawn
-
2014
- 2014-08-14 US US14/460,249 patent/US9331303B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09199307A (ja) * | 1996-01-23 | 1997-07-31 | Tdk Corp | 有機質ptcサーミスタ |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150132030A (ko) * | 2014-05-15 | 2015-11-25 | 주식회사 엘지화학 | 유기발광소자 |
KR101925574B1 (ko) * | 2014-05-15 | 2018-12-05 | 엘지디스플레이 주식회사 | 유기발광소자 |
Also Published As
Publication number | Publication date |
---|---|
TWI519205B (zh) | 2016-01-21 |
TW201116152A (en) | 2011-05-01 |
US9331303B2 (en) | 2016-05-03 |
US20110101396A1 (en) | 2011-05-05 |
DE102010041113A1 (de) | 2011-05-05 |
US20140353655A1 (en) | 2014-12-04 |
US8841654B2 (en) | 2014-09-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105210206B (zh) | 有机发光器件及其制造方法 | |
KR101094300B1 (ko) | 유기 발광 조명 장치 및 그 제조 방법 | |
KR101015843B1 (ko) | 유기 발광 조명 장치 | |
TWI552403B (zh) | 利用電流散佈總線之大面積發光電氣封裝體 | |
TWI552408B (zh) | 有機發光裝置及其製造方法 | |
KR101065409B1 (ko) | 유기 발광 조명 장치 | |
JP6510560B2 (ja) | 有機発光素子 | |
KR101456154B1 (ko) | 유기 발광 조명 장치 | |
CN106463642B (zh) | 有机发光装置及其制造方法 | |
CN107004695B (zh) | 有机发光装置 | |
CN106463645B (zh) | 有机发光装置及其制造方法 | |
CN103250265B (zh) | 有机电致发光元件 | |
TWI552411B (zh) | 有機發光裝置及其製造方法 | |
TW201436329A (zh) | 有機發光裝置及其製造方法 | |
TW201244524A (en) | Organic light emitting diode lighting apparatus | |
JP2011222449A (ja) | 発光装置 | |
JP5297400B2 (ja) | 発光装置 | |
JP2011216353A (ja) | 発光装置 | |
JP2011222448A (ja) | 発光装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20091029 |
|
PA0201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20110201 |
|
GRNT | Written decision to grant | ||
PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20110211 Patent event code: PR07011E01D |
|
PR1002 | Payment of registration fee |
Payment date: 20110211 End annual number: 3 Start annual number: 1 |
|
PG1601 | Publication of registration | ||
FPAY | Annual fee payment |
Payment date: 20140129 Year of fee payment: 4 |
|
PR1001 | Payment of annual fee |
Payment date: 20140129 Start annual number: 4 End annual number: 4 |
|
FPAY | Annual fee payment |
Payment date: 20150130 Year of fee payment: 5 |
|
PR1001 | Payment of annual fee |
Payment date: 20150130 Start annual number: 5 End annual number: 5 |
|
FPAY | Annual fee payment |
Payment date: 20180201 Year of fee payment: 8 |
|
PR1001 | Payment of annual fee |
Payment date: 20180201 Start annual number: 8 End annual number: 8 |
|
FPAY | Annual fee payment |
Payment date: 20190129 Year of fee payment: 9 |
|
PR1001 | Payment of annual fee |
Payment date: 20190129 Start annual number: 9 End annual number: 9 |
|
FPAY | Annual fee payment |
Payment date: 20200203 Year of fee payment: 10 |
|
PR1001 | Payment of annual fee |
Payment date: 20200203 Start annual number: 10 End annual number: 10 |
|
PR1001 | Payment of annual fee |
Payment date: 20210201 Start annual number: 11 End annual number: 11 |
|
PR1001 | Payment of annual fee |
Payment date: 20220127 Start annual number: 12 End annual number: 12 |
|
PR1001 | Payment of annual fee |
Payment date: 20240125 Start annual number: 14 End annual number: 14 |