KR100995630B1 - Liquid crystal display device of in-plane switching and method for fabricating the same - Google Patents

Abstract

In-Plane Switching (IPS) liquid crystal display device and a method of manufacturing the same for improving the aperture ratio, preventing the misalignment of the black matrix layer when reducing the upper and lower substrates, and reducing the TFT optical leakage current. In order to achieve the above object, a liquid crystal display (IPS) of the transverse electric field method (IPS) of the present invention for achieving the above object includes a first substrate and a second substrate facing each other at a predetermined interval; A gate wiring formed on the first substrate in a first direction; A gate insulating film formed on the entire surface of the first substrate including the gate wirings; A data wiring formed on the gate insulating film in a second direction perpendicular to the first direction so that the pixel region is defined; A thin film transistor formed at an intersection of the gate wiring and the data wiring; A first pixel electrode connected to the drain electrode of the thin film transistor on the gate insulating layer and formed in the second direction to correspond to the pixel region; An interlayer insulating film formed on an entire surface of the gate insulating film including the data line, the thin film transistor, and the first pixel electrode; A contact hole formed in the interlayer insulating layer to correspond to a region of the first pixel electrode; A common wiring formed on the interlayer insulating film so as to overlap the gate wiring; A portion formed on the interlayer insulating layer and overlapping with the data line and the active region of the thin film transistor; and another portion formed in the pixel region in the second direction so as to alternate with the first pixel electrode. A common electrode connected to the common wiring; And a second pixel electrode formed on the interlayer insulating layer so as to overlap the first pixel electrode in the pixel region and contacting one region of the first pixel electrode through the contact hole.

Common electrode, common wiring, aperture ratio, black matrix layer

Description

Transverse electric field type liquid crystal display device and its manufacturing method {LIQUID CRYSTAL DISPLAY DEVICE OF IN-PLANE SWITCHING AND METHOD FOR FABRICATING THE SAME}

1 is an exploded perspective view showing a part of a typical TN liquid crystal display device

Figure 2 is a schematic cross-sectional view showing a liquid crystal display device of a typical transverse electric field (IPS)

3A to 3B are diagrams illustrating phase transitions of liquid crystals when voltage on / off is performed in IPS mode.

4A and 4B are perspective views showing the operation of the IPS mode LCD in the off and on states, respectively.

5 is a plan view of a liquid crystal display device of a transverse electric field method (IPS) according to the prior art;

6 is a structural cross-sectional view taken along line II ′ of FIG. 5.

7 is a plan view of a liquid crystal display device of a transverse electric field method (IPS) according to another conventional technology

FIG. 8 is a structural cross-sectional view taken along line II-II 'of FIG. 7;

9 is a plan view of the upper and lower plates in accordance with the prior art

10 is a plan view of a liquid crystal display device of a transverse electric field system (IPS) according to a first embodiment of the present invention;

FIG. 11 is a structural cross-sectional view taken along line III-III ′ of FIG. 10.                 

12A to 12D are plan views illustrating a method of manufacturing a liquid crystal display device of a transverse electric field system (IPS) according to a first embodiment of the present invention.

13A to 13D are cross-sectional views illustrating a method of manufacturing a liquid crystal display device of a transverse electric field system (IPS) according to a first embodiment of the present invention.

14 is a plan view of a liquid crystal display device of a transverse electric field system (IPS) according to a second embodiment of the present invention;

15 is a cross-sectional view taken along the line IV-IV 'of FIG.

16A to 16C are plan views illustrating a method of manufacturing a liquid crystal display device of a transverse electric field system (IPS) according to a second embodiment of the present invention.

17A through 17C are cross-sectional views illustrating a method of manufacturing a transverse electric field type (IPS) liquid crystal display device according to a second embodiment of the present invention.

18 is a plan view of a liquid crystal display device of a transverse electric field system (IPS) according to a third embodiment of the present invention;

19A is a structural cross-sectional view along the line VV ′ of FIG. 18.

19B is a cross-sectional view taken along the line VI-VI 'of FIG. 18.

20A to 20C are plan views illustrating a method of manufacturing a liquid crystal display device of a transverse electric field method (IPS) according to a third embodiment of the present invention.

21A to 21C are cross-sectional views illustrating a method of manufacturing a transverse electric field (IPS) liquid crystal display device according to a third exemplary embodiment of the present invention.

22 is a plan view of a liquid crystal display device of a transverse electric field system (IPS) according to a fourth embodiment of the present invention.

FIG. 23 is a cross-sectional view taken along the line VII-VII 'of FIG. 22;

24A to 24D are plan views illustrating a method of manufacturing a liquid crystal display device of a transverse electric field system (IPS) according to a fourth embodiment of the present invention.

25A to 25D are cross-sectional views illustrating a method of manufacturing a transverse electric field type (IPS) liquid crystal display device according to a fourth embodiment of the present invention.

26 is a plan view of a liquid crystal display device of a transverse electric field system (IPS) according to a fifth embodiment of the present invention.

FIG. 27A is a structural cross sectional view along the line VII-VII 'of FIG. 26;

FIG. 27B is a structural cross sectional view taken along the line VII-VII 'of FIG. 26;

28A to 28C are plan views illustrating a method of manufacturing a liquid crystal display device of a transverse electric field method (IPS) according to a fifth embodiment of the present invention.

29A to 29C are cross-sectional views illustrating a method of manufacturing a transverse electric field type (IPS) liquid crystal display device according to a fifth embodiment of the present invention.

Explanation of symbols on the main parts of the drawings

50, 90, 190, 220, 290: upper substrate 91, 191: black matrix layer

52, 92, 192, 235, 305: color filter layer 53, 93, 193: overcoat layer

60, 100, 200, 230, 300: lower substrate

61, 101, 201, 231, 301: gate wiring                 

61a, 101a, 201a, 231a, 301a: gate electrode

62, 102, 202, 232, 302: gate insulating film

63, 103, 203, 233, 303: active layer

64, 104, 204, 234, 304: data wiring

64a, 104a, 204a, 234a, 304a: source electrode

64b, 104b, 204b, 234b, 304b: drain electrode

65, 105, 205, 236, 306: interlayer insulating film

66a, 106a, 206a, 237a, 307a: Common wiring

66b, 106b, 206b, 237b, 307b: common electrode

67, 238: Shield 68, 239: Contact hole

69, 104c, 204c, 240, 304c: pixel electrode

69a, 104d, 204d, 240a, 304d: storage electrodes 206c, 307c: upper pixel electrodes

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to a liquid crystal display device of an in-plane switching (hereinafter referred to as IPS) suitable for improving an aperture ratio and a manufacturing method thereof.

As the information society develops, the demand for display devices is increasing in various forms, and in recent years, liquid crystal display (LCD), plasma display panel (PDP), electro luminescent display (ELD), and vacuum fluorescent (VFD) have been developed. Various flat panel display devices such as displays have been studied, and some of them are already used as display devices in various devices.

Among them, LCD is the most widely used as a substitute for CRT (Cathode Ray Tube) for the use of mobile image display device because of the excellent image quality, light weight, thinness and low power consumption. In addition, it is being developed in various ways, such as a television for receiving and displaying broadcast signals, and a monitor of a computer.

As described above, although various technical advances have been made in order for the liquid crystal display device to serve as a screen display device in various fields, the task of improving the image quality as the screen display device has many advantages and disadvantages.

Therefore, in order to use a liquid crystal display device in various parts as a general screen display device, the key to development is how much high definition images such as high definition, high brightness, and large area can be realized while maintaining the characteristics of light weight, thinness, and low power consumption. It can be said.

Such a liquid crystal display device may be broadly divided into a liquid crystal panel displaying an image and a driving unit for applying a driving signal to the liquid crystal panel, wherein the liquid crystal panel includes first and second glass substrates having a space and are bonded to each other; It consists of a liquid crystal layer injected between the said 1st, 2nd glass substrate.                         

The first glass substrate (TFT array substrate) may include a plurality of gate lines arranged in one direction at a predetermined interval, a plurality of data lines arranged at regular intervals in a direction perpendicular to the gate lines, and A plurality of pixel electrodes formed in a matrix form in each pixel region defined by crossing each gate line and data line, and a plurality of thin films that transmit signals of the data line to each pixel electrode by being switched by signals of the gate line The transistor is formed.

The second glass substrate (color filter substrate) includes a black matrix layer for blocking light in portions other than the pixel region, an R, G, B color filter layer for expressing color colors, and a common electrode for implementing an image. Is formed. Of course, the common electrode is formed on the first glass substrate in the transverse electric field type liquid crystal display device.

The first and second glass substrates are bonded by a sealing material having a predetermined space by a spacer and having a liquid crystal injection hole, and a liquid crystal is injected between the two substrates.

In this case, in the liquid crystal injection method, the liquid crystal is injected between the two substrates by osmotic pressure when the liquid crystal injection hole is immersed in the liquid crystal container by maintaining the vacuum state between the two substrates bonded by the reality. When the liquid crystal is injected as described above, the liquid crystal injection hole is sealed with a sealing material.

On the other hand, the driving principle of the liquid crystal display device as described above uses the optical anisotropy and polarization of the liquid crystal.

Since the liquid crystal is thin and long in structure, the liquid crystal has a direction in the arrangement of the molecules, and the direction of the molecular array can be controlled by artificially applying an electric field to the liquid crystal.

Accordingly, when the molecular arrangement direction of the liquid crystal is arbitrarily adjusted, the molecular arrangement of the liquid crystal is changed, and light polarized by optical anisotropy may be arbitrarily modulated to express image information.

Such liquid crystals may be classified into positive liquid crystals having a positive dielectric anisotropy and negative liquid crystals having a negative dielectric anisotropy according to an electrical specific classification, and liquid crystal molecules having a positive dielectric anisotropy are long axes of liquid crystal molecules in a direction in which electric fields are applied. The liquid crystal molecules arranged in parallel and having negative dielectric anisotropy are arranged perpendicularly to the direction in which the electric field is applied and the major axis of the liquid crystal molecules.

1 is an exploded perspective view illustrating a part of a general TN liquid crystal display device.

As shown in FIG. 1, the lower substrate 1 and the upper substrate 2 bonded to each other with a predetermined space, and the liquid crystal layer 3 injected between the lower substrate 1 and the upper substrate 2 are composed of. It is.

More specifically, the lower substrate 1 has a plurality of gate lines 4 arranged in one direction at regular intervals to define the pixel region P, and in a direction perpendicular to the gate lines 4. A plurality of data lines 5 are arranged at regular intervals, and a pixel electrode 6 is formed in each pixel region P where the gate line 4 and the data line 5 intersect, and each gate line The thin film transistor T is formed at the portion where (4) and the data line 5 intersect.

The upper substrate 2 may include a black matrix layer 7 for blocking light in portions other than the pixel region P, an R, G, B color filter layer 8 for expressing color colors, The common electrode 9 for forming an image is formed.

The thin film transistor T may include a gate electrode protruding from the gate line 4, a gate insulating film (not shown) formed on the front surface, an active layer formed on the gate insulating film above the gate electrode, and the data. And a source electrode protruding from the line 5 and a drain electrode to face the source electrode.

The pixel electrode 6 uses a transparent conductive metal having a relatively high light transmittance, such as indium-tin-oxide (ITO).

In the liquid crystal display device configured as described above, the liquid crystal layer 3 positioned on the pixel electrode 6 is aligned by a signal applied from the thin film transistor T, and the liquid crystal layer 3 is aligned with the alignment degree of the liquid crystal layer 3. Accordingly, the image can be expressed by controlling the amount of light passing through the liquid crystal layer 3.

As described above, the liquid crystal panel drives the liquid crystal by an electric field applied up and down, and has excellent characteristics such as transmittance and aperture ratio, and the common electrode 9 of the upper substrate 2 serves as a ground to discharge static electricity. It is possible to prevent the destruction of the liquid crystal cell.

However, the liquid crystal drive by the electric field applied up-down has a disadvantage that the viewing angle characteristics are not excellent.

Accordingly, in order to overcome the above disadvantages, a new technology, namely, a liquid crystal display device of IPS, has been proposed.                         

2 is a schematic cross-sectional view showing a liquid crystal display of a general IPS.

As shown in FIG. 2, the pixel electrode 12 and the common electrode 13 are formed on the lower substrate 11 on the same plane.

In addition, the liquid crystal layer 14 formed between the lower substrate 11 and the upper substrate 15 bonded to the lower substrate 11 may be disposed between the pixel electrode 12 and the common electrode 13 on the lower substrate 11. It works by electric field.

3A to 3B are diagrams illustrating phase transitions of liquid crystals when voltages are turned on and off in the IPS mode.

That is, FIG. 3A shows an off state in which no transverse electric field is applied to the pixel electrode 12 or the common electrode 13, so that the phase change of the liquid crystal layer 14 does not occur. For example, the pixel electrode 12 and the common electrode 13 are basically shifted by 45 ° in the horizontal direction.

FIG. 3B is an on state in which a transverse electric field is applied to the pixel electrode 12 and the common electrode 13, and a phase shift of the liquid crystal layer 14 occurs, and is about 45 ° compared to the off state of FIG. 3A. It can be seen that the horizontal direction of the pixel electrode 12 and the common electrode 13 and the twist direction of the liquid crystal have a twist angle.

As described above, in the liquid crystal display of the IPS, both the pixel electrode 12 and the common electrode 13 exist on the same plane.

An advantage of the transverse electric field method is that a wide viewing angle is possible.

That is, when the liquid crystal display device is viewed from the front, the liquid crystal display device may be visible in the up / down / left / right directions at about 70 °.                         

In addition, there is an advantage that the manufacturing process is simpler and the color shift according to the viewing angle is smaller than that of the liquid crystal display device.

However, since the common electrode 13 and the pixel electrode 12 are present on the same substrate, there is a disadvantage in that transmittance and aperture ratio due to light are reduced.

In addition, there is a disadvantage in that the response time due to the driving voltage must be improved and the cell gap is made uniform because the misalign margin of the cell gap is small.

That is, the transverse electric field type liquid crystal display device has the advantages and disadvantages as described above can be selected according to the user's use.

4A and 4B are perspective views showing the operation of the liquid crystal display of the IPS in the off state and the on state, respectively.

As shown in FIG. 4A, when no transverse electric field voltage is applied to the pixel electrode 12 or the common electrode 13, the alignment direction of the liquid crystal molecules 16 is the same as that of the initial alignment layer (not shown). Is arranged.

As shown in FIG. 4B, when the transverse electric field voltage is applied to the pixel electrode 12 and the common electrode 13, the alignment direction 16 of the liquid crystal molecules is arranged in the direction 17 to which the electric field is applied. Can be.

Hereinafter, a liquid crystal display of a conventional transverse electric field method (IPS) will be described with reference to the accompanying drawings.

5 is a plan view of a liquid crystal display device of a transverse electric field method (IPS) according to the prior art, FIG. 6 is a structural cross-sectional view taken along line II ′ of FIG. 5, and FIG. .

First, a transverse electric field type liquid crystal display device according to the related art includes a gate electrode protruding from a gate wiring 31 in a predetermined region on a transparent lower substrate 30 as shown in FIGS. 5 and 6. 31a) and the gate insulating layer 32 formed of a material such as SiNx or SiOx on the entire surface of the lower substrate 30 including the common electrode 31b having a predetermined distance from the gate electrode 31a and the gate electrode 31a. ), An active layer 33 formed in an island shape on the gate insulating layer 32 while corresponding to the gate electrode 31a, and a portion of the active layer 33 overlapping the data line (FIG. 5). The source electrode 34a and the drain electrode 34b formed at regular intervals from the source electrode 34a, and the source / drain electrodes 34a / 34b and the active layer 33. An ohmic contact layer 33a formed therebetween, A passivation layer 35 formed of a material made of SiNx or SiOx on the entire surface of the lower substrate 30 to have a contact hole in the drain electrode 34b, and the pixel electrode contacted with the drain electrode 34b through the contact hole. It consists of 36.

The common electrode 31b in the pixel region is connected to the common wiring 31c, and the pixel electrode 36 is formed between the common electrode 31b in the pixel region and on one region of the common wiring 31c. .

In addition, an alignment film (not shown) made of polyimide is formed on the passivation layer 35.                         

In addition, on the lower substrate 31 and the corresponding upper substrate 20 having the above configuration, as shown in FIGS. 6 and 9, the black matrix layer 21 and the color for preventing leakage of light may be implemented. The color filter layer 22 and the overcoat layer 23 which consist of R, G, and B color filter elements for this purpose are laminated | stacked in order.

In this case, the black matrix layer 21 is widely formed in the region corresponding to the data line 34, the gate line 31, and the thin film transistor TFT ('T') in consideration of the upper and lower bonding margins.

Next, a transverse electric field type liquid crystal display device according to another conventional technique will be described.

7 is a plan view of a liquid crystal display device of a transverse electric field system (IPS) according to another conventional technology, and FIG. 8 is a cross-sectional view of the structure along the line II-II 'of FIG.

As shown in FIGS. 7 and 8, a liquid crystal display device of a transverse electric field method (IPS) according to another conventional technology may include a gate electrode protruding from a gate wiring 31 in a predetermined region on a transparent lower substrate 30. 31a) and the gate insulating layer 32 formed of a material such as SiNx or SiOx on the entire surface of the lower substrate 30 including the common electrode 31b having a predetermined distance from the gate electrode 31a and the gate electrode 31a. ), An active layer 33 formed in an island shape on the gate insulating layer 32 while corresponding to the gate electrode 31a, and a predetermined portion of the active layer 33 overlaps the data line 34. A source electrode 34a protruding from the source electrode, a drain electrode 34b and a pixel electrode 34c formed at regular intervals from the source electrode 34a, and SiNx or SiOx on the entire surface of the lower substrate 30; Beams formed of a material consisting of It consists of the arc film 35.

Here, the common electrode 31b in the pixel region is connected to the common wiring 31c, and the pixel electrode 34c is connected to the drain electrode 34b of the thin film transistor overlapped on one side of the active layer 33. Are formed between the common electrodes 31b and on one region of the common wiring 31c.

In addition, an alignment film (not shown) made of polyimide is formed on the passivation layer 35.

In addition, the upper substrate 20 corresponding to the lower substrate 30 formed as described above includes a black matrix layer 21 for preventing light leakage and color filter elements of R, G, and B for implementing colors. The color filter layer 22 and the overcoat layer 23 are laminated one by one.

Although the black matrix layer 21 is not shown in the drawing, the black matrix layer 21 is widely considered in the area corresponding to the data wiring 34, the gate wiring 31, and the thin film transistor TFT ('T') in consideration of the upper and lower bonding margins. Formed.

As described above, the IPS liquid crystal display has a structure in which the common electrode and the pixel electrode are formed on the same substrate, and have a great advantage in improving the viewing angle.

However, the liquid crystal display of the conventional transverse electric field (IPS) as described above has the following problems.

First, since the common wiring occupies one region of the pixel region separately from the gate wiring and the data wiring, the aperture ratio is lowered.

Second, since the black matrix layer formed on the upper substrate is designed to be ?? considering the upper / lower plate bonding margin, there is a problem that the opening ratio is lowered.

Third, since the black matrix layer is formed on the upper substrate corresponding to the TFT, the light leakage current may be generated by external light.

The present invention has been made to solve the above problems, and in particular, an object of the present invention is to provide a liquid crystal display device of the In-Plane Switching (IPS) suitable for improving the aperture ratio and a manufacturing method thereof. .

Another object of the present invention is to provide a liquid crystal display device of an in-plane switching (IPS) suitable for preventing misalignment of the black matrix layer when the upper and lower substrates are bonded, and a manufacturing method thereof. have.

It is still another object of the present invention to provide a liquid crystal display device having an in-plane switching (IPS) suitable for reducing the light leakage current of a TFT and a manufacturing method thereof.

In order to achieve the above object, a liquid crystal display (IPS) of the transverse electric field system (IPS) of the present invention includes: a first substrate and a second substrate facing each other at a predetermined interval; A gate wiring formed on the first substrate in a first direction; A gate insulating film formed on the entire surface of the first substrate including the gate wirings; A data wiring formed on the gate insulating film in a second direction perpendicular to the first direction so that the pixel region is defined; A thin film transistor formed at an intersection of the gate wiring and the data wiring; A first pixel electrode connected to the drain electrode of the thin film transistor on the gate insulating layer and formed in the second direction to correspond to the pixel region; An interlayer insulating film formed on an entire surface of the gate insulating film including the data line, the thin film transistor, and the first pixel electrode; A contact hole formed in the interlayer insulating layer to correspond to a region of the first pixel electrode; A common wiring formed on the interlayer insulating film so as to overlap the gate wiring; A portion formed on the interlayer insulating layer and overlapping with the data line and the active region of the thin film transistor; and another portion formed in the pixel region in the second direction so as to alternate with the first pixel electrode. A common electrode connected to the common wiring; And a second pixel electrode formed on the interlayer insulating layer so as to overlap the first pixel electrode in the pixel region and contacting one region of the first pixel electrode through the contact hole.

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In addition, a transverse electric field type liquid crystal display device according to another embodiment of the present invention includes a first substrate and a second substrate facing each other at a predetermined interval; A gate wiring formed on the first substrate in a first direction; A gate insulating film formed on the entire surface of the first substrate including the gate wirings; A data wiring formed on the gate insulating film in a second direction perpendicular to the first direction so that the pixel region is defined; A thin film transistor formed at an intersection of the gate wiring and the data wiring; A first pixel electrode connected to the drain electrode of the thin film transistor on the gate insulating layer and formed in the second direction to correspond to the pixel region; A color filter layer formed on an entire surface of the gate insulating layer including the data line, the first pixel electrode, and the thin film transistor; An interlayer insulating film formed on the entire surface of the color filter layer; A contact hole formed in the color filter layer and the interlayer insulating layer so as to correspond to a region of the first pixel electrode; A common wiring formed on the interlayer insulating film so as to overlap the gate wiring; A portion formed on the interlayer insulating layer and overlapping the data line and the active region of the thin film transistor, and another portion formed in the second region so as to alternate with the first pixel electrode in the pixel region; A common electrode connected to the wiring; A second pixel electrode formed on the interlayer insulating layer so as to overlap the first pixel electrode in the pixel area formed in the second direction, and contacting one region of the first pixel electrode through the contact hole; Characterized in that configured.

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In addition, a method of manufacturing a transverse electric field type liquid crystal display device according to an exemplary embodiment of the present invention includes forming a gate wiring having a first direction on a substrate and a gate electrode provided at one side of the gate wiring; Forming a gate insulating film on an entire surface of the substrate including the gate electrode and the gate wiring; Forming an active layer on the gate insulating layer, the active layer overlapping at least a portion of the gate electrode; A data line having a second direction perpendicular to the first direction so as to define a pixel region, a source electrode and a drain electrode overlapping one side and the other side of the active layer, and the drain electrode; Forming a first pixel electrode corresponding to the pixel region and having the second direction; Forming an interlayer insulating film on the entire surface of the substrate; And a common line overlapping the gate line on the interlayer insulating layer, a portion corresponding to the pixel area, alternately with the first pixel electrode and having a second direction, and another portion overlapping with the data line and the active layer. And forming a second pixel electrode which alternates with a part of the common electrode by overlapping the common electrode including the common electrode and the first pixel electrode in the pixel region.

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Hereinafter, a liquid crystal display (IPS) of a transverse electric field system (IPS) of the present invention and a manufacturing method thereof will be described with reference to the accompanying drawings.

First embodiment

In the first embodiment of the present invention, the common wiring and the common electrode are formed to overlap the gate wiring and the data wiring with the active layer (especially, the channel region) to serve as a black matrix layer of the upper substrate. The pixel electrode overlaps the gate wiring.

First, a transverse electric field type liquid crystal display device according to a first embodiment of the present invention will be described.

FIG. 10 is a plan view of a liquid crystal display device of a transverse electric field system (IPS) according to a first embodiment of the present invention, and FIG. 11 is a structural cross-sectional view taken along line III-III 'of FIG.

As shown in FIGS. 10 and 11, the horizontal liquid crystal display device according to the first embodiment of the present invention includes a gate wiring 61 arranged vertically and horizontally on a transparent lower substrate 60 to define a pixel region; A gate formed of a material such as SiNx or SiOx on the entire surface of the data line 64, the gate electrode 61a protruding from one side of the gate line 61, and the lower substrate 60 including the gate electrode 61a. An insulating layer 62, an active layer 63 formed in an island shape on the gate insulating layer 62 on the gate electrode 61a, and protruding from the data line 64 to form an active layer 63. An overlapping source electrode 64a on one side, a drain electrode 64b spaced apart from the source electrode 64a by a predetermined interval, and overlapping on the other side of the active layer 63, a source electrode 64a, and a drain electrode 64b. Layer formed on the front surface of the lower substrate 60 including A common layer formed on the interlayer insulating film 65 so as to overlap the insulating film 65 and the gate wiring 61, the data wiring 64, and the active layer 63 (particularly, the channel region) and to cross the pixel region. Drain through the wiring 66a and the common electrode 66b, the passivation layer 67 formed on the entire surface of the lower substrate 60 to have the contact hole 68 in the drain electrode 64b, and the contact hole 68. The pixel electrode 69 is formed of a pixel electrode 69 which is in contact with the electrode 64b and overlaps the upper portion of the gate wiring 61 at the front end and is formed at regular intervals on both sides of the common electrode 66b of the pixel region.

In addition, an alignment film (not shown) made of polyimide is formed on the passivation film 67.

In this case, the common wiring 66a overlaps the gate wiring 66a and the common electrode 66b overlaps the data wiring 64 and the active layer 63 (particularly, the channel region). It is formed to intersect the pixel area in connection with 66a.

The interlayer insulating layer 65 may have a thickness of about 2 μm to 3 μm in order to prevent a delay of signals of the gate line 61 and the data line 64 by the common line 66a and the common electrode 66b. It is formed of at least one of acryl, polyimide, BCB (Benzo Cyclo Butene), an oxide film, and a nitride film which has, and the surface is flat.

In addition, on the lower substrate 60 and the corresponding upper substrate 50 formed as described above, the color filter layer 52 and the overcoat layer 53 made of color filter elements of R, G, and B for realizing color are sequentially. It is stacked.

In this case, the black matrix layer which is generally formed to prevent light leakage on the upper substrate is a common wiring 66a formed of an opaque metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), and tungsten (W). And the common electrode 66b may be omitted since the common electrode 66b may take its role.

Meanwhile, the common wiring 66a and the common electrode 66b may be formed of a transparent metal material such as ITO. In this case, an island-type black matrix layer is formed to cover the active layer of the thin film transistor on the upper substrate 50. It is further provided.

Next, a manufacturing method of the transverse electric field type liquid crystal display device according to the first embodiment of the present invention will be described to have the above configuration.

12A to 12D are plan views illustrating a method of manufacturing a liquid crystal display device of a transverse electric field method (IPS) according to a first embodiment of the present invention, and FIGS. 13A to 13D are transverse electric fields according to a first embodiment of the present invention. The process cross-sectional view which shows the manufacturing method of the liquid crystal display device of IP system (IPS).

First, as illustrated in FIGS. 12A and 13A, a conductive metal is deposited on a transparent lower substrate 60, and the conductive metal is patterned by using a photo and etching process, so that one end thereof is formed with a wider predetermined area. (Not shown) and a gate wiring 61 extending in one direction from the gate pad and a gate electrode 61a protruding from the gate wiring 61 in one direction.

Thereafter, a gate insulating layer 62 is formed on the entire surface of the lower substrate 60 on which the gate electrode 61a is formed.

The gate insulating layer 62 may be formed of silicon nitride (SiNx) or silicon oxide (SiO ₂ ).

12B and 13B, a semiconductor layer (amorphous silicon + impurity amorphous silicon) is formed on the gate insulating layer 62.

Subsequently, the semiconductor layer is patterned by photo and etching processes to form an active layer 63 having an island shape on the gate electrode 61a.

Subsequently, a conductive metal is deposited on the entire surface of the lower substrate 60 on which the active layer 63 is formed, and patterned through photo and etching processes to cross the gate line 61 to define a pixel region 64. A source pad (not shown) having a predetermined area at the end, a source electrode 64a protruding in one direction from the data line 64, and a source electrode 64a separated from the source electrode 64a by a predetermined distance. A drain electrode 64b is formed. At this time, the impurity amorphous silicon of the active layer 63 on the channel region is also etched to form the ohmic contact layer 63a.

12C and 13C, an interlayer insulating film 65 having a flat surface is formed on the entire surface of the lower substrate 60 on which the data lines 64 are formed.

The interlayer insulating layer 65 may be formed using at least one of acryl, polyimide, benzocyclobutene (BCB), oxide film, and nitride film.

Next, a conductive metal is deposited on the interlayer insulating film 65 and patterned through photo and photolithography to form a common wiring 66a and a common electrode 66b.

The conductive metal may be formed of a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), or may be formed of a transparent metal such as ITO.

The common wiring 66a is formed to overlap the gate wiring 61.

The common electrode 66b is formed to overlap the data line 64 and the active layer 63, and is connected to the common line 66a formed on the gate line 61 to cross the pixel area. Form.                     

Thereafter, after the passivation layer 67 is formed on the entire surface of the lower substrate 60 including the common wiring 66a and the common electrode 66b, the contact hole 68 is formed to expose one region of the drain electrode 64b. .

The protective film 67 is formed using either an oxide film or a nitride film.

When the contact hole 68 is formed, although not shown in the drawing, the gate pad and the source pad portion are also exposed.

Next, as shown in FIGS. 12D and 13D, a conductive metal is deposited on the entire surface of the lower substrate 60 including the contact hole 68, and the conductive metal is selectively removed through photo and etching processes to remove the conductive metal. The contact electrode 68 contacts the drain electrode 64b, overlaps the upper portion of the gate wiring 61 at the front end, and has a predetermined interval on both sides of the common electrode 66b of the pixel region.

At this time, the conductive metal contacting the drain electrode 64b through the contact hole 68 and having a predetermined interval on both sides of the common electrode 66b of the pixel region forms the pixel electrode 69, and the upper portion of the gate wiring 61 in the front end. The conductive metal overlapped on each other forms the storage electrode 69b.

In this case, the pixel electrode 69 is connected to the storage electrode 69b.

The storage structure is a hybrid storage structure that employs both a storage on gate and a storage on common.

Although not shown in the drawing, an alignment layer made of polyimide or photo-alignment material is formed on the entire surface of the lower substrate 60 including the pixel electrode 69, the common wiring 66a, and the common electrode 66b.

Here, the alignment layer made of polyimide is determined by mechanical rubbing, and the photoreactive material made of polyvinylcinnamate based material or polysiloxane based material is oriented by irradiation with light such as ultraviolet rays. This is determined.

At this time, the orientation direction is determined by the irradiation direction of the light or the property of the irradiated light, that is, the polarization direction.

Thereafter, the upper substrate 50, which is the color filter array substrate on which the color filter layer 52 and the overcoat layer 53 are formed, is prepared.

A seal material (not shown) for bonding the lower substrate 60 and the upper substrate 50 is formed on the lower substrate 60 or the upper substrate 50.

Subsequently, the upper substrate 50, which is the color filter substrate, and the lower substrate 60, which is a thin film transistor array substrate, are bonded to each other.

Although not shown in the drawing, an alignment layer of the same material as that of the lower substrate 60 is formed on the front surface of the upper substrate 50.

In the case where the common wiring 66a and the common electrode 66b are formed of a transparent metal, the upper substrate 50 further includes an island-type black matrix layer to cover the active layer of the thin film transistor.

Second embodiment

First, a transverse electric field type liquid crystal display device according to a second embodiment of the present invention will be described.

FIG. 14 is a plan view of a liquid crystal display device of a transverse electric field system (IPS) according to a second embodiment of the present invention, and FIG. 15 is a structural cross-sectional view taken along the line IV-IV 'of FIG.

In the transverse electric field type liquid crystal display device according to the second exemplary embodiment of the present invention, as illustrated in FIGS. 14 and 15, gate wirings arranged vertically and horizontally on a transparent lower substrate 100 to define pixel regions (see FIG. 16A). 101 and the data line 104, a gate electrode 101a protruding from one side of the gate line 101, and a material such as SiNx or SiOx on the entire surface of the lower substrate 100 including the gate electrode 101a Protruded from the gate insulating film 102 formed of the semiconductor layer, the active layer 103 formed in an island shape on the gate insulating film 102 above the gate electrode 101a, and the data line (104 in FIG. 16B). The source electrode 104a overlapped on one side of the active layer 103, the drain electrode 104b spaced apart from the source electrode 104a by a predetermined interval, and overlapped on the other side of the active layer 103, and the drain electrode ( 104b) and work on the pixel area The interlayer insulating film 105 formed on the entire surface of the lower substrate 100 including the pixel electrode 104c, the pixel electrode 104c, and the common wiring 106a overlapped on the gate wiring 101; The common electrode connected to the common wiring 106a formed on the gate wiring 101 and spaced apart from each other between the pixel electrode 104c and the data wiring 104 and between the two pixel electrodes 104c ( 106b).

The storage electrode 104d is connected to the pixel electrode 104c and is formed on an upper portion of the gate wiring.                     

A storage capacitor in which a gate insulating layer, a pixel electrode, a deposition insulating layer and a common wiring are stacked is disposed on the gate wiring 101 at the front end.

Also, an alignment film (not shown) made of polyimide is formed on the interlayer insulating film 105.

The interlayer insulating film 105 is formed of at least one of acryl, polyimide, Benzo cyclobutene (BCB), oxide film, and nitride film.

In addition, the lower substrate 100 and the upper substrate 90 formed as described above are formed of a black matrix layer 91 for preventing light leakage and color filter elements of R, G, and B for implementing colors. The color filter layer 92 and the overcoat layer 93 are laminated one by one.

Next, a method of manufacturing a transverse electric field type liquid crystal display device according to a second embodiment of the present invention will be described so as to have the above configuration.

16A to 16C are plan views illustrating a method of manufacturing a liquid crystal display device of a transverse electric field method (IPS) according to a second embodiment of the present invention, and FIGS. 17A to 17D are transverse electric fields according to a second embodiment of the present invention. The process cross-sectional view which shows the manufacturing method of the liquid crystal display device of IP system (IPS).

First, as illustrated in FIGS. 16A and 17A, a conductive metal is deposited on a transparent lower substrate 100, and the conductive metal is patterned by using a photo and etching process, so that one end of the gate pad is formed to have a predetermined area. (Not shown), a gate wiring 101 extending in one direction from the gate pad and a gate electrode 101a protruding in one direction from the gate wiring 101 are formed.

Thereafter, the gate insulating layer 102 is formed on the entire surface of the lower substrate 100 on which the gate electrode 101a is formed.

The gate insulating layer 102 may use a silicon nitride layer (SiNx) or a silicon oxide layer (SiO ₂ ).

Thereafter, as shown in FIGS. 16B and 17B, a semiconductor layer (amorphous silicon + impurity amorphous silicon) is formed on the gate insulating film 102.

Subsequently, the semiconductor layer is patterned by photo and etching processes to form an active layer 103 having an island shape on the gate electrode 101a.

Thereafter, a conductive metal is deposited on the entire surface of the lower substrate 100 on which the active layer 103 is formed, and patterned through photo and etching processes to intersect the gate wiring 101 to define a pixel region 104. A source pad (not shown) having a predetermined area at an end thereof, the source electrode 104a protruding in one direction from the data line 104, and the source electrode 104a separated from the source electrode 104a by a predetermined distance. A drain electrode 104b is formed in the region. At this time, the impurity amorphous silicon of the active layer 103 on the channel region is etched to form an ohmic contact layer 103a.

In addition, the pixel electrode 104c is formed to extend from the drain electrode 104b and have a predetermined interval in the pixel region.

When the pixel electrode 104c is formed, the storage electrode 104d is formed on the gate wiring of the front end so as to be connected to the pixel electrode 104c and exist on the same layer.

That is, the pixel electrode 104c and the storage electrode 104d are connected above the gate wiring of the front end.

The storage structure is formed of a hybrid storage structure in which both a storage on gate and a storage on common are applied.

Thereafter, as shown in FIGS. 16C and 17C, an interlayer insulating layer 105 is formed on the entire surface of the lower substrate 100 on which the data lines 104 are formed.

The interlayer insulating layer 105 may be formed using at least one of acryl, polyimide, benzocyclobutene (BCB), oxide film, and nitride film.

Next, a conductive metal is deposited on the interlayer insulating layer 105 and patterned through photo and photolithography to form a common wiring 106a and a common electrode 106b.

The conductive metal may be a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W).

In this case, the common wiring 106a is formed on an upper portion of the gate wiring 101.

The common electrode 106b is connected to the common wiring 106a formed on the gate wiring 101 to be spaced apart from each other between the pixel electrode 104c and the data line 104 and between the two pixel electrodes 104c. To form.

Although not shown in the drawing, an alignment layer made of polyimide or photo-alignment material is formed on the entire surface of the lower substrate 100 including the pixel electrode 104c, the common wiring 106a, and the common electrode 106b.

Here, the alignment layer made of polyimide is determined by mechanical rubbing, and the photoreactive material made of polyvinylcinnamate based material or polysiloxane based material is oriented by irradiation with light such as ultraviolet rays. This is determined.

At this time, the orientation direction is determined by the irradiation direction of the light or the property of the irradiated light, that is, the polarization direction.

Thereafter, the upper substrate 90, which is a color filter array substrate on which the black matrix layer 91, the color filter layer 92, and the overcoat layer 93 are formed, is prepared.

A seal material (not shown) for bonding the lower substrate 100 and the upper substrate 90 is formed on the lower substrate 100 or the upper substrate 90.

Next, the upper substrate 90 as the color filter substrate and the lower substrate 100 as the thin film transistor array substrate are bonded to each other.

Although not shown in the drawing, an alignment layer of the same material as the lower substrate 100 is formed on the front surface of the upper substrate 90.

As described above, the transverse electric field type liquid crystal display device according to the second exemplary embodiment of the present invention excludes a branch portion in which the common wiring 106a and the common electrode 106b protrude to apply an electric field to operate the liquid crystal. Since it does not occupy the opening of the pixel area, there is an effect that the opening ratio becomes higher than the prior art.

Third Embodiment

First, a transverse electric field type liquid crystal display device according to a third embodiment of the present invention will be described.

FIG. 18 is a plan view of a liquid crystal display device of a transverse electric field system (IPS) according to a third exemplary embodiment of the present invention, FIG. 19A is a structural cross-sectional view taken along the line VV ′ of FIG. 18, and FIG. 19B is a VI- FIG. It is a structural cross section on line VI '.

In the transverse electric field type liquid crystal display device according to the third exemplary embodiment of the present invention, as shown in FIGS. 18, 19A, and 19B, the gate wirings are arranged vertically and horizontally on the transparent lower substrate 200 to define pixel regions. 20N of FIG. 20A and the data wiring 204, the gate electrode 201a protruding from one side of the gate wiring 201, and the SiNx or the like on the front surface of the lower substrate 200 including the gate electrode 201a. A gate insulating film 202 formed of a material such as SiOx, an active layer 203 formed in an island shape on the gate insulating film 202 on the gate electrode 201a, and the data line 204 of FIG. 120B. A source electrode 204a protruding from the second electrode 204a overlapping the upper side of the active layer 203, a drain electrode 204b spaced apart from the source electrode 204a by a predetermined interval, and overlapping the other side of the active layer 203, and Connected to the drain electrode 204b and constant An interlayer insulating film 205 formed on the entire surface of the lower substrate 200 including the pixel electrode 204c and the pixel electrode 204c and having a contact hole in the drain electrode 204b and the gate; Overlapping the wiring 201, the data wiring 204, and the active layer 203, and being connected to the common wiring 206a on the front gate wiring 201 and between the pixel electrode 204c of the pixel region. An upper portion of the pixel electrode 204c protruding from the common wiring 206a and the common electrode 206b and the pixel electrode 204c through the contact hole and spaced apart from the common wiring 206a and the common electrode 206b. And an upper pixel electrode 206c superimposed thereon.

In this case, the common wiring 206a and the common electrode 206b are formed on the same layer as the upper pixel electrode 206c, and are formed of a transparent material such as indium-tin-oxide (ITO).

An alignment film (not shown) made of polyimide is formed on the interlayer insulating film 205.

The interlayer insulating film 205 is formed of at least one of acryl, polyimide, Benzo cyclobutene (BCB), oxide film, and nitride film, and has a flat surface.

The reason why the upper pixel electrode 206c is formed to be connected to the pixel electrode 204c is that a transverse electric field does not occur between the pixel electrode 204c and the common electrode 206b due to the thickness of the interlayer insulating film 205. To prevent it.

In addition, the upper substrate 190 corresponding to the lower substrate 200 formed as described above includes a black matrix layer 191 for preventing light leakage and color filter elements of R, G, and B for implementing colors. The color filter layer 192 and the overcoat layer 193 are laminated one by one.

The common electrode 206b and the common wiring 206a may be formed of a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), or the like.

As described above, when the common electrode 206b and the common wiring 206a are formed of an opaque metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), or the like, the upper substrate 190 It is composed of a color filter layer 192 and an overcoat layer 193 composed of color filter elements of R, G, and B for realizing color.

Next, a manufacturing method of the transverse electric field type liquid crystal display device according to the third embodiment of the present invention will be described to have the above configuration.

20A to 20C are plan views illustrating a method of manufacturing a transverse electric field (IPS) liquid crystal display device according to a third embodiment of the present invention, and FIGS. 21A to 21E are transverse electric fields according to a third embodiment of the present invention. The process cross-sectional view which shows the manufacturing method of the liquid crystal display device of IP system (IPS).

First, as illustrated in FIGS. 20A and 21A, a conductive metal is deposited on a transparent lower substrate 200, and the conductive metal is patterned by using a photo and etching process, so that one end thereof is widened to a predetermined area. (Not shown) and a gate wiring 201 extending in one direction from the gate pad and a gate electrode 201a protruding from the gate wiring 201 in one direction.

Thereafter, the gate insulating layer 202 is formed on the entire surface of the lower substrate 200 on which the gate electrode 201a is formed.

The gate insulating layer 202 may use a silicon nitride layer (SiNx) or a silicon oxide layer (SiO ₂ ).

Thereafter, as shown in FIGS. 20B and 21B, a semiconductor layer (amorphous silicon + impurity amorphous silicon) is deposited on the gate insulating film 202.

Subsequently, the semiconductor layer is patterned by photo and etching processes to form an active layer 203 having an island shape on the gate electrode 101a.

Subsequently, a conductive metal is deposited on the entire surface of the lower substrate 200 on which the active layer 203 is formed, and patterned through photo and etching processes to intersect the gate wiring 201 and define a data region 204. A source pad (not shown) having a predetermined area at an end thereof, the source electrode 204a protruding in one direction from the data line 204, and the source electrode 204a separated from each other by a predetermined distance. A drain electrode 204b is formed in the region. At this time, the impurity amorphous silicon of the active layer 203 on the channel region is etched to form an ohmic contact layer 203a.

In addition, the pixel electrode 204c is formed to extend from the drain electrode 204b and protrude at a predetermined interval in the pixel region.

When the pixel electrode 204c is formed, the storage electrode 204d is formed on the front gate wiring 201 so as to be connected to the pixel electrode 204c.

The storage structure is a hybrid storage structure that employs both a storage on gate and a storage on common.

Thereafter, as shown in FIGS. 20C and 21C, an interlayer insulating layer 205 is formed on the entire surface of the lower substrate 200 on which the data lines 204 are formed.

The interlayer insulating layer 205 may be formed using at least one of acryl, polyimide, benzocyclobutene (BCB), oxide film, and nitride film.

Thereafter, contact holes are formed to expose one region of the pixel electrode 204c.

Next, a transparent conductive material is deposited on the interlayer insulating layer 205 and patterned through photo and photolithography to form a common wiring 206a, a common electrode 206b, and an upper pixel electrode 206c.

In this case, the transparent conductive material may use indium-tin-oxide (ITO).

The common wiring 206a, the common electrode 206b, and the upper pixel electrode 206c may be formed of an opaque metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), or the like.

The common wiring 206a is formed to overlap the gate wiring 201, and the common electrode 206b overlaps the data wiring 204 and the active layer 203 and is formed on the gate wiring 201. It is connected to the wiring 206a and formed to be spaced apart from each other by the pixel electrode 204c.

The upper pixel electrode 206c is contacted with the pixel electrode 204c through a contact hole, and is formed on the pixel electrode 204c so as to be spaced apart from the common wiring 206a and the common electrode 206b.

Although not shown in the drawing, an alignment layer made of polyimide or photo-alignment material is formed on the entire surface of the lower substrate 200 including the common wiring 206a, the common electrode 206b, and the upper pixel electrode 206c.                     

Here, the alignment layer made of polyimide is determined by mechanical rubbing, and the photoreactive material made of polyvinylcinnamate based material or polysiloxane based material is oriented by irradiation with light such as ultraviolet rays. This is determined.

At this time, the orientation direction is determined by the irradiation direction of the light or the property of the irradiated light, that is, the polarization direction.

Thereafter, the upper substrate 190, which is a color filter array substrate on which the black matrix layer 191, the color filter layer 192, and the overcoat layer 193 are formed, is prepared.

In this case, when the common wiring 206a, the common electrode 206b, and the upper pixel electrode 206c are formed of a transparent conductive material, the black matrix layer 191 is formed to cover the channel region of the thin film transistor.

When the common wiring 206a, the common electrode 206b, and the upper pixel electrode 206c are formed of an opaque metal, the common wiring 206a, the common electrode 206b, and the upper pixel electrode 206c block light. Since it plays a role, it is not necessary to form the black matrix layer on the upper substrate 190.

A seal material (not shown) for bonding the lower substrate 200 and the upper substrate 190 is formed on the lower substrate 200 or the upper substrate 190.

Next, the upper substrate 190, which is the color filter substrate, and the lower substrate 200, which is a thin film transistor array substrate, are bonded to each other.

Although not shown in the drawing, an alignment layer of the same material as the lower substrate 200 is formed on the front surface of the upper substrate 190.

Fourth embodiment

First, a transverse electric field type liquid crystal display device according to a fourth embodiment of the present invention will be described.

FIG. 22 is a plan view of a liquid crystal display device of a transverse electric field system (IPS) according to a fourth embodiment of the present invention, and FIG. 23 is a structural cross-sectional view taken along the line XX 'of FIG.

The transverse electric field type liquid crystal display according to the fourth exemplary embodiment of the present invention is characterized in that the color filter layer 235 is formed on the lower substrate 230 instead of the upper substrate 220. 237a and the common electrode 237b serve as a black matrix layer.

Therefore, although not shown in the figure, only the alignment layer is formed on the upper substrate 220.

That is, the same as that of the first embodiment of the present invention except that the color filter layer 235 is formed between the interlayer insulating film 236 and the source / drain electrodes 234a and 234b and no black matrix layer is formed.

In this case, the color filter layer 235 partially overlaps both sides of the data line 234 and is formed along the pixel area.

Next, a method of manufacturing a liquid crystal display device of a transverse electric field system (IPS) according to a fourth embodiment of the present invention having the above configuration will be described.

24A to 24D are plan views illustrating a method of manufacturing a liquid crystal display device of a transverse electric field method (IPS) according to a fourth embodiment of the present invention, and FIGS. 25A to 25D are horizontal views according to a fourth embodiment of the present invention. It is a process sectional drawing which shows the manufacturing method of the liquid crystal display device of an electric field system (IPS).

According to the fourth embodiment of the present invention, a method of manufacturing a liquid crystal display (IPS) of a transverse electric field method (IPS) is shown in FIGS. 24A, 24B, 25A, and 25B. The gate insulating film 232, the active layer 233, the data wiring 234, the source electrode 234a, and the drain electrode 234b are formed by the same method as the first embodiment of the present invention.

Subsequently, as shown in FIGS. 24C and 25C, the color filter layers 235 of R, G, and B are respectively formed on the entire surface of the lower substrate 230, and the interlayer insulating film (the surface is flat on the color filter layer 235). 236).

Next, the common wiring 237a, the common electrode 237b, and the protective film 238, the pixel electrode 240, the storage electrode 240a and the alignment film as shown in Figs. 24D and 25D are also shown in the first embodiment of the present invention. It is formed by the same method as.

If there is a difference, a contact hole for contacting the pixel electrode 240 with the drain electrode 234b is formed by etching the passivation layer 238, the interlayer insulating layer 236, and the color filter layer 235, and the upper substrate 220. It is to form only the alignment film without forming the color filter layer, the black matrix layer and the overcoat layer.

Fifth Embodiment

First, a transverse electric field type liquid crystal display device according to a fifth embodiment of the present invention will be described.

FIG. 26 is a plan view of a liquid crystal display device of a transverse electric field system (IPS) according to a fifth embodiment of the present invention. FIG. 27A is a cross-sectional view taken along the line VII-VII 'of FIG. 26, and FIG. 27B is VII- Ⅸ 'Cross section of the structure.

In the transverse electric field type liquid crystal display device according to the fifth embodiment of the present invention, the color filter layer 305 is not formed on the upper substrate 290, and the lower substrate 300 is compared with the configuration of the third embodiment of the present invention. There is a structural difference in that it is formed.

In addition, since the common wiring 206a and the common electrode 206b serve as a black matrix layer, only an alignment layer (not shown) is formed on the upper substrate 290.

That is, except that the color filter layer 305 is formed in the pixel region between the interlayer insulating film 306 and the source / drain electrodes 304a / 304b, and the black matrix layer is not formed. same.

In this case, the color filter layer 305 overlaps both sides of the data line 304 and is formed along the pixel area.

Next, a manufacturing method of a liquid crystal display device of a transverse electric field system (IPS) according to a fifth embodiment of the present invention having the above configuration will be described.

28A to 28C are plan views illustrating a method of manufacturing a transverse electric field (IPS) liquid crystal display device according to a fifth embodiment of the present invention, and FIGS. 29A to 29C are transverse electric fields according to a fifth embodiment of the present invention. The process cross-sectional view which shows the manufacturing method of the liquid crystal display device of IP system (IPS).                     

A method of manufacturing a transverse electric field type (IPS) liquid crystal display device according to a fifth embodiment of the present invention is as shown in FIGS. 28A to 28B, 29A, and 29B. The method of forming the gate insulating film 302, the active layer 303, the data wiring 304, the source electrode 304a, the drain electrode 304b, and the pixel electrode 304c is the same as that of the third embodiment of the present invention. Form by the method.

Thereafter, R, G, and B color filter layers 305 are formed in the pixel region of the lower substrate 300, respectively.

Next, as shown in FIGS. 28C and 29C, an interlayer insulating film 306 is formed on the color filter layer 305 with a flat surface.

Thereafter, the common wiring 307a, the common electrode 307b, and the upper pixel electrode 307c are also formed by the same method as in the third embodiment of the present invention.

If there is a difference, a contact hole for contacting the pixel electrode 304c and the upper pixel electrode 307c is formed by etching the interlayer insulating film 306 and the color filter layer 305.

As described above, the transverse electric field type liquid crystal display device and the manufacturing method thereof have the following effects.

First, since the common wiring and the common electrode are overlapped on the gate wiring, the data wiring, and the active layer to serve as a black matrix layer, it is possible to prevent the misalignment of the black matrix layer of the upper substrate by the upper / lower substrate bonding. can do.

As a result, since the black matrix layer can be omitted or its width can be narrowed, the aperture ratio can be improved.

Second, since the common wiring and the common electrode completely cover the active layer (particularly, the channel region) of the TFT, the light leakage current of the TFT can be reduced.

Third, since the common wiring and the common electrode do not occupy other openings of the pixel region except for the portion where the electric field is applied to operate the liquid crystal, the aperture ratio is higher than in the prior art.

Fourth, since the electrodes (common electrode, upper pixel electrode) for driving the liquid crystal exist in the same layer, the afterimage property is superior to the case where the electrodes for forming the electric field for driving the liquid crystal exist in different layers.

Claims (52)

A first substrate and a second substrate facing each other at a predetermined interval; A gate wiring formed on the first substrate in a first direction; A gate insulating film formed on the entire surface of the first substrate including the gate wirings; A data wiring formed on the gate insulating film in a second direction perpendicular to the first direction so that the pixel region is defined; A thin film transistor formed at an intersection of the gate wiring and the data wiring; A first pixel electrode connected to the drain electrode of the thin film transistor on the gate insulating layer and formed in the second direction to correspond to the pixel region; An interlayer insulating film formed on an entire surface of the gate insulating film including the data line, the thin film transistor, and the first pixel electrode; A contact hole formed in the interlayer insulating layer to correspond to a region of the first pixel electrode; A common wiring formed on the interlayer insulating film so as to overlap the gate wiring; A portion formed on the interlayer insulating layer and overlapping with the data line and the active region of the thin film transistor; and another portion formed in the pixel region in the second direction so as to alternate with the first pixel electrode. A common electrode connected to the common wiring; A second pixel electrode formed on the interlayer insulating layer so as to overlap the first pixel electrode in the pixel region, and contacting one region of the first pixel electrode through the contact hole; A second pixel electrode formed to overlap the first pixel electrode therein and contacting one region of the first pixel electrode through the contact hole; A storage electrode formed on the gate insulating layer, the storage electrode extending from the first pixel electrode and overlapping with a front gate wiring; The front gate gate and the storage electrode overlap each other with the gate insulating layer interposed therebetween to form a storage on gate, and the common wire overlapping the storage electrode and the front gate gate wiring overlap each other with the interlayer insulating layer interposed therebetween. And a common wiring overlapping the storage electrode, the front gate line, and the front gate line to form a hybrid storage structure. The method of claim 1, The interlayer dielectric layer is formed of at least one of acrylic, polyimide, benzocyclobutene (BCB), oxide film, and nitride film. The method of claim 1, And the interlayer insulating film has a flat surface. delete delete The method of claim 1, The common electrode and the common wiring are formed of a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W) and the like. The method of claim 1, The second substrate includes a color filter layer and an overcoat layer formed of color filter elements of R, G, and B for realizing color. delete The method of claim 1, And a passivation layer formed on an entire surface of the interlayer insulating layer including the second pixel electrode, the common wiring, and the common electrode. The protective film is a liquid crystal display device of a transverse electric field characterized in that the protective film is composed of any one of an oxide film and a nitride film. The method of claim 1, The common electrode, the common wiring, and the second pixel electrode are formed of a transparent conductive material such as ITO. The method of claim 10, When the common electrode and the common wiring are formed of a transparent metal material such as ITO, And a black matrix layer formed in an island shape covering the active layer of the thin film transistor on the second substrate. delete delete delete The method of claim 1, And the other part of the common electrode is formed between two second pixel electrodes. delete delete delete delete delete delete delete delete The method of claim 1, An alignment film is provided on the second substrate further comprises a transverse electric field type liquid crystal display device. delete A first substrate and a second substrate facing each other at a predetermined interval; A gate wiring formed on the first substrate in a first direction; A gate insulating film formed on the entire surface of the first substrate including the gate wirings; A data wiring formed on the gate insulating film in a second direction perpendicular to the first direction so that the pixel region is defined; A thin film transistor formed at an intersection of the gate wiring and the data wiring; A first pixel electrode connected to the drain electrode of the thin film transistor on the gate insulating layer and formed in the second direction to correspond to the pixel region; A color filter layer formed on an entire surface of the gate insulating layer including the data line, the first pixel electrode, and the thin film transistor; An interlayer insulating film formed on the entire surface of the color filter layer; A contact hole formed in the color filter layer and the interlayer insulating layer so as to correspond to a region of the first pixel electrode; A common wiring formed on the interlayer insulating film so as to overlap the gate wiring; A portion formed on the interlayer insulating layer and overlapping the data line and the active region of the thin film transistor, and another portion formed in the second region so as to alternate with the first pixel electrode in the pixel region; A common electrode connected to the wiring; A second pixel electrode formed on the interlayer insulating layer so as to overlap the first pixel electrode in the pixel region formed in the second direction and contacting one region of the first pixel electrode through the contact hole; A storage electrode on the gate insulating layer, the storage electrode extending from the first pixel electrode and overlapping a front gate wiring; The storage electrode may form a storage on gate with the shear gate wiring overlapping the gate insulating layer, and may form a storage on comon with the common wiring with the interlayer insulating layer interposed therebetween, thereby forming a hybrid storage structure. Transverse electric field type liquid crystal display device characterized in that the generated. delete The method of claim 26, And wherein the common wiring, the common electrode and the second pixel electrode are made of a transparent conductive material such as ITO. 29. The method of claim 28, When the common wiring, the common electrode and the second pixel electrode are made of a transparent conductive material such as ITO, The second substrate further comprises a black matrix layer formed in an island shape corresponding to the active layer of the thin film transistor. The method of claim 26, And the color filter layer is overlapped on both sides of the data line. Forming a gate wiring having a first direction on the substrate and a gate electrode provided on one side of the gate wiring; Forming a gate insulating film on an entire surface of the substrate including the gate electrode and the gate wiring; Forming an active layer on the gate insulating layer, the active layer overlapping at least a portion of the gate electrode; A data line having a second direction perpendicular to the first direction so as to define a pixel region, a source electrode and a drain electrode overlapping one side and the other side of the active layer, and the drain electrode; Forming a first pixel electrode corresponding to the pixel area and having the second direction, and a storage electrode extending from the first pixel electrode and overlapping a front gate wiring; Forming an interlayer insulating film on the entire surface of the substrate; And On the interlayer insulating layer, a common wiring overlapping with the gate wiring, a portion corresponding to the pixel region alternately with the first pixel electrode and having a second direction, and another portion overlapping with the data wiring and the active layer may be formed. And forming a common electrode including a second pixel electrode which overlaps with a portion of the common electrode by overlapping with the first pixel electrode in the pixel region, The storage electrode may form a storage on gate with the shear gate wiring overlapping the gate insulating layer, and may form a storage on comon with the common wiring with the interlayer insulating layer interposed therebetween, thereby forming a hybrid storage structure. A method of manufacturing a transverse electric field type liquid crystal display device, characterized in that formed. delete The method of claim 31, wherein And in the forming of the interlayer insulating film, the interlayer insulating film is formed to have a flat surface. delete delete delete delete The method of claim 31, wherein In the forming of the common wiring, the common electrode, and the second pixel electrode, The common electrode is connected to the first common line overlapping the gate line and the second common line overlapping the front gate line between the second pixel electrode, and crosses the pixel area in the second direction. Method of manufacturing a transverse electric field type liquid crystal display device characterized in that. delete The method of claim 31, wherein In the forming of the common wiring, the common electrode, and the second pixel electrode, And wherein the common wiring, the common electrode, and the second pixel electrode are formed of an indium-tin-oxide (ITO) film. delete delete 32. The method of claim 31, Before forming the interlayer insulating film, And forming a color filter layer corresponding to the entire surface of the substrate. delete delete delete delete The method of claim 31, wherein In the forming of the common wiring, the common electrode, and the second pixel electrode, The common wiring and the common electrode may be formed of a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), or the like. delete delete The method of claim 26, The other part of the common electrode is connected between the second pixel electrode to a first common line overlapping the gate line and a second common line overlapping the previous gate line, thereby moving the pixel area in the second direction. A transverse electric field type liquid crystal display device, characterized in that formed to cross. delete

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