KR100975850B1 - 탄소나노튜브 제조용 샤워헤드장치 - Google Patents
탄소나노튜브 제조용 샤워헤드장치 Download PDFInfo
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- KR100975850B1 KR100975850B1 KR1020070113109A KR20070113109A KR100975850B1 KR 100975850 B1 KR100975850 B1 KR 100975850B1 KR 1020070113109 A KR1020070113109 A KR 1020070113109A KR 20070113109 A KR20070113109 A KR 20070113109A KR 100975850 B1 KR100975850 B1 KR 100975850B1
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 239000002041 carbon nanotube Substances 0.000 title claims abstract description 45
- 229910021393 carbon nanotube Inorganic materials 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000007789 gas Substances 0.000 claims abstract description 91
- 239000012495 reaction gas Substances 0.000 claims abstract description 90
- 238000002347 injection Methods 0.000 claims abstract description 75
- 239000007924 injection Substances 0.000 claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000007921 spray Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 8
- 229910010293 ceramic material Inorganic materials 0.000 claims 1
- 239000002071 nanotube Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 9
- 239000002994 raw material Substances 0.000 abstract description 9
- 238000003786 synthesis reaction Methods 0.000 abstract description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 230000035484 reaction time Effects 0.000 abstract description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 238000001628 carbon nanotube synthesis method Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (9)
- 기판상에 탄소나노튜브를 합성시킬 수 있도록 챔버 내에 원료가스와 반응가스를 각각 공급하는 원료가스공급부와 반응가스공급부로 구성된 탄소나노튜브 제조용 샤워헤드장치에 있어서,상기 원료가스공급부는 원료가스와 반응가스가 챔버 내에 분리 공급될 수 있도록 상기 반응가스공급부 내측에 격리될 수 있게 설치하되, 상기 반응가스공급부와 원료가스공급부는 반응가스와 원료가스가 동심원을 형성하며 다공 분사될 수 있도록 제1분사노즐체와 제2분사노즐체가 각각 구비되고,상기 제1분사노즐체는 상기 반응가스공급관이 일측에 연결되는 제1버퍼부 하단부에 설치하되, 반응가스를 분사시키는 다수의 분사구가 일정 간격으로 관통 형성된 제1다공판으로 구성되고,상기 원료가스공급부의 제2분사노즐체는 원료가스공급관이 일측에 연결되고 상기 반응가스공급부의 내측 중앙부에 설치되는 제2버퍼부 하단부에 설치하되, 상기 분사구에 대응되게 다수의 배출공이 형성되며 상기 제1다공판과 이격되게 설치되는 제2다공판과, 상기 배출공에 일단부가 결합되며 타단부는 상기 제1분사노즐체의 분사구와 동심원을 형성하도록 분사구의 중앙부를 관통하여 설치되는 분사관으로 구성되며,상기 제1분사노즐체의 제1다공판과 상기 제2분사노즐체의 제2다공판은 반응가스가 플라즈마 상태가 될 수 있도록 고주파 전원의 하부전극과 상부전극으로 각각 형성되는 것을 특징으로 하는 탄소나노튜브 제조용 샤워헤드장치.
- 삭제
- 삭제
- 제 1항에 있어서,상기 분사관은 상기 제2다공판의 배출공에 일단이 삽입 설치되되, 내경이 상기 배출공의 직경과 동일하거나 또는 크게 형성되는 것을 특징으로 하는 탄소나노튜브 제조용 샤워헤드장치.
- 제 4항에 있어서,상기 분사관은 세라믹 소재로 형성되는 것을 특징으로 하는 탄소나노튜브 제조용 샤워헤드장치.
- 삭제
- 제 1항, 제 4항, 및 제 5항 중 어느 한 항에 있어서,상기 반응가스공급부와 원료가스공급부는 원통형 또는 사각통 형상인 것을 특징으로 하는 탄소나노튜브 제조용 샤워헤드장치.
- 삭제
- 제 1항에 있어서,상기 분사관은,탄소나노튜브가 기판에서만 성장될 수 있도록 하단부가 상기 분사구의 하단부보다 더 하측으로 연장되도록 형성되는 것을 특징으로 하는 탄소나노튜브 제조용 샤워헤드장치.
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KR1020070113109A KR100975850B1 (ko) | 2007-11-07 | 2007-11-07 | 탄소나노튜브 제조용 샤워헤드장치 |
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KR1020070113109A KR100975850B1 (ko) | 2007-11-07 | 2007-11-07 | 탄소나노튜브 제조용 샤워헤드장치 |
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KR20090047098A KR20090047098A (ko) | 2009-05-12 |
KR100975850B1 true KR100975850B1 (ko) | 2010-08-13 |
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KR1020070113109A Expired - Fee Related KR100975850B1 (ko) | 2007-11-07 | 2007-11-07 | 탄소나노튜브 제조용 샤워헤드장치 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020010465A (ko) * | 2001-05-08 | 2002-02-04 | 문종 | 개선된 샤워헤드를 구비한 반도체 제조장치 |
KR20040034907A (ko) * | 2002-10-17 | 2004-04-29 | 디지웨이브 테크놀러지스 주식회사 | 박막 증착 속도를 조절하는 샤워헤드를 구비한 화학 기상증착 장치. |
KR20060120402A (ko) * | 2005-05-19 | 2006-11-27 | 주식회사 피에조닉스 | 샤워헤드를 구비한 화학기상 증착 방법 및 장치 |
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2007
- 2007-11-07 KR KR1020070113109A patent/KR100975850B1/ko not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20020010465A (ko) * | 2001-05-08 | 2002-02-04 | 문종 | 개선된 샤워헤드를 구비한 반도체 제조장치 |
KR20040034907A (ko) * | 2002-10-17 | 2004-04-29 | 디지웨이브 테크놀러지스 주식회사 | 박막 증착 속도를 조절하는 샤워헤드를 구비한 화학 기상증착 장치. |
KR20060120402A (ko) * | 2005-05-19 | 2006-11-27 | 주식회사 피에조닉스 | 샤워헤드를 구비한 화학기상 증착 방법 및 장치 |
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