KR100966443B1 - In plane switching mode liquid crystal display device and fabrication method threrof - Google Patents

Abstract

The present invention relates to a transverse electric field type liquid crystal display device capable of suppressing a mirror effect by external light, and a manufacturing method thereof, comprising: first and second substrates; Gate lines and data lines arranged vertically and horizontally on the first substrate; A pixel region defined by the gate line and the data line; A common electrode and a pixel electrode disposed in the pixel region and generating a transverse electric field in the pixel region; A protective film formed on an entire surface of the substrate including the pixel electrode and the common electrode; The buffer layer is formed on the passivation layer, and includes a buffer layer in which insulating layers having different refractive indices of at least two or more layers are alternately stacked.

Description

Transverse electric field type liquid crystal display device and manufacturing method therefor {IN PLANE SWITCHING MODE LIQUID CRYSTAL DISPLAY DEVICE AND FABRICATION METHOD THREROF}

1 is a view showing the structure of a general transverse electric field type liquid crystal display device.

2 is a view showing a transverse electric field type liquid crystal display device according to the present invention.

Figure 3 shows another embodiment of the present invention.

4 illustrates another embodiment of the present invention.

5 is a graph showing the reflectance according to the wavelength of the conventional structure and the structure according to the present invention.

6 is a process flowchart showing a manufacturing process of a transverse electric field type liquid crystal display device according to the present invention.

*** Explanation of symbols for main parts of drawing ***

101: gate line 103: data line

104: common electrode line 108: gate insulating film

109: thin film transistor 111: protective film

114: pixel electrode line 130: buffer layer

130a: first titanium oxide film (TiO ₂ )

130b: first silicon oxide film (SiO ₂ )

130c: second titanium oxide film (TiO ₂ )

130d: second silicon oxide film (SiO ₂ )

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and in particular, to a common electrode made of an opaque metal material disposed in a pixel region, and a transverse electric field type liquid crystal display device capable of suppressing a mirror effect caused by external light reflected by a pixel electrode, and a It relates to a manufacturing method.

The twisted nematic mode liquid crystal display device, which is mainly used as a high-definition, low power flat panel display device, has a narrow viewing angle. This is due to the refractive anisotropy of the liquid crystal molecules, because the liquid crystal molecules oriented horizontally with the substrate are oriented almost perpendicular to the substrate when a voltage is applied to the liquid crystal display panel.

Accordingly, in-plane switching mode LCD (LCD), which solves the viewing angle problem by aligning liquid crystal molecules in a substantially horizontal direction with a substrate, has been actively studied in recent years.                         

FIG. 1 schematically illustrates a unit pixel of a general transverse electric field type liquid crystal display device. FIG. 1A is a plan view, and FIG. 1B is a cross-sectional view taken along line II ′ in FIG. 1A.

As shown in the figure, in the transverse electric field type liquid crystal display device, the gate line 1 and the data line 3 are vertically and horizontally arranged on a transparent first substrate 10 to define a pixel area. In an actual liquid crystal display device, n gate lines 1 and m data lines 3 intersect with n x m pixels, but only one pixel is shown in the figure for simplicity. It was.

A thin film transistor 9 composed of a gate electrode 1a, a semiconductor layer 5, and a source / drain electrode 2a / 2b is disposed at an intersection point of the gate line 1 and the data line 3. The gate electrode 1a and the source / drain electrodes 2a / 2b are connected to the gate line 1 and the data line 3, respectively.

The common electrode line 4 is arranged in parallel with the gate line 1 in the pixel region, and at least one pair of electrodes for switching the liquid crystal molecules, that is, the common electrodes 6a to 6c and the pixel electrodes 7a and 7b. It is arranged in parallel with this data line 103. The common electrodes 6a to 6c are formed at the same time as the gate line 1 and connected to the common electrode line 4, and the pixel electrodes 7a to 7b are formed at the same time as the source / drain electrodes 2a / 2b to form a thin film. It is connected to the drain electrode 2b of the transistor 9. The protective film 11 and the first alignment film 12a are coated over the entire substrate including the source / drain electrodes 2a / 2b. In this case, the common electrode 6 may be formed outside the pixel area to shield the transverse electric field generated between the pixel electrodes 7a and 7b and the data line 3. In addition, the pixel electrode line 14 formed to overlap the common electrode line 4 and to be connected to the pixel electrode 7 has a storage capacitance between the insulating film 8 (FIG. 1B) interposed therebetween. Form.

In addition, a black matrix 21 and a color filter 23 are formed on the second substrate 20 to prevent light leakage from the thin film transistor 9, the gate line 1, and the data line 3. The second alignment film 12b is applied thereon. In addition, a liquid crystal layer 13 is formed between the first and second substrates 10 and 20.

The transverse electric field type liquid crystal display device having the above structure has an advantage of improving the viewing angle because the common electrode and the pixel electrode are disposed on the same plane to generate a transverse electric field. However, since the common electrodes 6a to 6c and the pixel electrodes 7a and 7b disposed in the pixel region where the screen is displayed are formed of an opaque metal film, external light is reflected by the two electrodes when the user observes the screen. There was a problem in that the user's appearance reflects the mirror effect.

Accordingly, an object of the present invention is to solve the above problems, and an object of the present invention is to repeatedly stack at least two layers having different refractive indices on top of a common electrode and a pixel electrode disposed in a pixel, thereby reflecting external light. To reduce the mirror effect.

Other objects and features of the present invention will be described in detail in the configuration and claims of the following invention.

A transverse electric field type liquid crystal display device of the present invention for achieving the above object comprises a first and a second substrate; Gate lines and data lines arranged vertically and horizontally on the first substrate to define pixel regions; A common electrode and a pixel electrode disposed in the pixel region to generate a transverse electric field in the pixel region; A protective film formed on an entire surface of the substrate including the pixel electrode and the common electrode; The buffer layer is formed on the passivation layer, and includes a buffer layer in which insulating layers having different refractive indices of at least two or more layers are alternately stacked.

A thin film transistor is formed at an intersection of the gate line and the data line, the thin film transistor comprising: a gate electrode connected to the gate line; A gate insulating film stacked on the gate electrode; A semiconductor layer formed on the gate insulating film; An ohmic contact layer formed on the semiconductor layer; And a source / drain electrode formed on the ohmic contact layer and connected to the data line.

The buffer layer includes first and second insulating layers, wherein the first insulating layer is a silicon oxide layer (SiO ₂ ), and the second insulating layer is a titanium oxide layer (TiO ₂ ). It is also possible that the first insulating film is a titanium oxide film (TiO ₂ ) and the second insulating layer is a silicon oxide film (SiO ₂ ).

In addition, the buffer layer may be composed of a quadruple insulating film made of a first silicon oxide (SiO ₂ ) / first titanium oxide (TiO ₂ ) / second silicon oxide (SiO ₂ ) / second titanium oxide (TiO ₂ ). . As such, when the quadruple insulating film is formed, the thickness of the first silicon oxide film (SiO ₂ ) is 500 kPa to 900 kPa, the thickness of the first titanium oxide film (TiO ₂ ) is 20 kPa to 100 kPa, and the second silicon oxide film ( SiO ₂ ) has a thickness of 10 kPa to 70 kPa, and the thickness of the second titanium oxide film (TiO ₂ ) is 10 kPa to 120 kPa.

In addition, the black matrix formed on the second substrate; A color filter formed on the black matrix; Further comprising a liquid crystal layer formed between the first and second substrate.

The common electrode is selected from the group consisting of Cu, Ti, Cr, Al, Mo, Ta, Al alloy, and the pixel electrode is selected from the group consisting of Cu, Mo, Ta, Al, Cr, Ti, Al alloy.

In addition, the transverse electric field type liquid crystal display device according to the present invention comprises: a first substrate and a second substrate; Gate lines and data lines disposed vertically and horizontally on the first substrate to define pixel regions; A switching element disposed at an intersection of the gate line and the data line; A common electrode and a pixel electrode disposed in the pixel region and generating a transverse electric field in the pixel region; A protective film formed on an entire surface of the substrate including the pixel electrode and the common electrode; A buffer layer formed on the passivation layer and formed of a quadruple insulating layer of a first silicon oxide layer (SiO ₂ ) / first titanium oxide layer (TiO ₂ ) / second silicon oxide layer (SiO ₂ ) / first titanium oxide layer (TiO ₂ ). and; And a liquid crystal layer formed between the first and second substrates.

In addition, the method of manufacturing a transverse electric field type liquid crystal display device according to the present invention comprises the steps of preparing a transparent substrate; Forming the gate electrode, the gate line and the common electrode; Forming an insulating film over the substrate on which the gate electrode, the gate line and the common electrode are formed, and then forming a source / drain electrode, a data line, and a pixel electrode thereon; Forming a buffer layer by repeatedly stacking at least two layers of silicon oxide film (TiO ₂ ) / titanium oxide film (TiO ₂ ) on a substrate including the source / drain electrode, the data line, and the pixel electrode. The method may further include forming a passivation layer on an entire surface of the substrate including the source / drain electrode, the data line, and the pixel electrode.

As described above, the present invention can suppress the mirror effect by adding a buffer layer on the common electrode and the pixel electrode to lower the reflectance of external light.

Hereinafter, a transverse electric field type liquid crystal display device and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings.

2 is a transverse electric field type liquid crystal display device according to the present invention. FIG. 2A is a plan view showing unit pixels, and FIG. 2B is a cross-sectional view taken along line II-II 'of FIG. 2A.

As shown in the figure, in the transverse electric field type liquid crystal display device according to the present invention, a gate line 101 and a data line 103 are vertically and horizontally arranged on a transparent first substrate 110 to define a pixel area. At the intersection of the gate line 101 and the data line 103, a thin film transistor 109 composed of the gate electrode 101a, the semiconductor layer 105, and the source / drain electrodes 102a / 102b is disposed. . In this case, the gate electrode 101a and the source / drain electrodes 102a and 102b are connected to the gate line 101 and the data line 103, respectively.

The common electrode line 104 is arranged in parallel with the gate line 101 in the pixel area, and at least one pair of electrodes for switching the liquid crystal molecules, that is, the common electrodes 106a to 106c and the pixel electrodes 107a and 107b It is arranged in parallel with the data line 103. The common electrodes 106a to 106c are formed at the same time as the gate line 101 and connected to the common electrode line 104, and the pixel electrodes 107a to 107b are formed at the same time as the source / drain electrodes 102a and 102b to form a thin film. It is connected to the drain electrode 2b of the transistor 109. The protective layer 111 is stacked over the entire substrate including the source / drain electrodes 102a and 102b, and a buffer layer 130 in which at least two or more insulating layers are repeatedly stacked is formed on the protective layer 111. It is.

The common electrodes 106a to 106c and the pixel electrodes 107a and 107b are made of an opaque metal material such as Cu, Ti, Cr, Al, Mo, Ta, and an Al alloy. Accordingly, when external light is incident, the common electrodes 106a to 106c and the pixel electrodes 107a and 107b serve as reflecting layers, which generate a mirror effect in which a user's face is observed on a monitor. Let's go.

Therefore, the buffer layer 130 suppresses the mirror effect by causing a destructive interference with respect to the reflected light reflected through the common electrodes 106a to 106c and the pixel electrodes 107a and 107b to lower the reflectance. That is, the buffer layer 130 is a structure in which at least two or more insulating layers having different refractive indices are repeatedly stacked, and external light passes through an insulating layer having different refractive indices, thereby generating a phase difference, thereby causing common electrodes 106a to 106c and pixel electrodes. The light reflected by 107a and 107b is canceled out.

On the other hand, in the cross-section of II-II 'shown in FIG. 2B, the common electrode 106b is formed on the transparent first substrate 110, and an insulating film 108 is coated thereon. The insulating layer 108 insulates the gate electrode 101a and the semiconductor layer 105 and is interposed between the common electrode line 104 and the pixel electrode line 114 to form a storage capacitor. The pixel electrode 107a is formed on the insulating film 108 to be spaced apart from the common electrode 106b by a predetermined distance, and a protective film 111 is coated thereon. The passivation layer 111 is coated on the entire surface of the substrate, and the buffer layer 130 is formed on the passivation layer 111. The first alignment layer 112a is disposed on the buffer layer 130 to determine the initial alignment direction of the liquid crystal molecules.

The buffer layer 130 has a structure in which two insulating films, a titanium oxide film (TiO ₂ ; 130a) and a silicon oxide film (SiO ₂ ; 130b), are stacked, and the two insulating films 130a and 130b have different refractive indices. That is, the refractive index of the titanium oxide film 130a is 2.62 to 2.90, and the refractive index of the silicon oxide film 130b is 1.48 to 1.51.

On the other hand, the second substrate facing the first substrate 110 is a color filter substrate, the second substrate 120 together with the color filter 123 and the first alignment layer 112a for substantially implementing the color. The second alignment film 112b for determining the arrangement state of the liquid crystal is formed.

The external light incident on the common electrode and the pixel electrode region disposed in the pixel causes offset interference because the refractive indexes of the two materials constituting the buffer layer 130 are different from each other. That is, the light transmitted through the buffer layer 130 and reflected from the common electrode or the pixel electrode and the light reflected from the buffer layer generate a phase difference due to different refractive indices of the insulating films constituting the buffer, and cause offset interference, thereby causing the intensity of reflected light. Weakens.

Therefore, the mirror effect of the user's appearance on the monitor can be suppressed. That is, in the related art, since there is no buffer layer that blocks light reflected from the common electrode and the pixel electrode, the user's appearance is directly reflected on the monitor. On the other hand, in the present invention, since a buffer layer capable of canceling the reflected light is disposed on the common electrode and the pixel electrode, the reflection of the common electrode and the pixel electrode and the user's reflection on the monitor can be reduced. Can also increase the contrast ratio.

The buffer layer 130 does not necessarily need to be a double insulation layer. That is, if the structure in which the double insulation layers having different refractive indices are stacked repeatedly is also possible, a multilayer structure of two or more.

3 shows one end surface of a transverse electric field type liquid crystal display device having a buffer layer formed of a quadruple insulating layer. In this embodiment, all components except for the buffer layer structure are the same as in the previous drawings (FIG. 2B), the same reference numerals are used for the same components, and the description thereof will be omitted.

As shown in the figure, the structure of the buffer layer 130 is a first titanium oxide film (TiO ₂ ; 130a) / first silicon oxide film (SiO ₂ ; 130b) / second titanium oxide film sequentially stacked on the protective film 111 (TiO ₂ ; 130c) / second silicon oxide film (SiO ₂ ; 130d). In this case, the buffer layer 130 may be formed on or under the passivation layer 111. In order to reduce the reflectance of external light, the buffer layer 130 should be formed on the common electrode 106b and the pixel electrode 107a.

In addition, the buffer layer 130 may be formed on the entire surface of the substrate, or may be formed only on the common electrode and the pixel electrode region, as shown in FIG. 4. However, the structure shown in FIG. 4 has a problem in that a mask process is added for patterning because the buffer layer is locally formed only on the common electrode and the pixel electrode region. However, the same effect as the previous drawing (FIG. 4) can be obtained. At this time, the thickness of the first silicon oxide film 130a is 500 kPa to 900 kPa, the thickness of the first titanium oxide film 130b is 20 kPa to 100 kPa, and the thickness of the second silicon oxide film 130c is 10 kPa to 70 kPa, The second titanium oxide film 130d has a thickness in the range of 10 kPa to 120 kPa, and the protective film 111 has a thickness in the range of 2000 kPa to 3000 kPa. The thicknesses of the above-mentioned buffer layer and protective film are just examples, and are not limited in the present invention, and should be determined within a range of minimizing reflectance of external light.

FIG. 5 is a graph comparing the results of simulating a reflectance according to the wavelength of light with respect to the pixel electrode region A of the present invention having a conventional structure without a buffer layer and a buffer layer having a four-layer structure. Here, what is indicated by the dotted line is the conventional structure, and what is indicated by the solid line represents the reflectance of the structure of the present invention, respectively. In order to simplify the simulation, the second substrate, the color filter, the liquid crystal, and the alignment layer were excluded. The pixel electrode is molybdenum (Mo), and the protective film is formed of SiNx, and the thicknesses of the pixel electrode, the protective film, and the buffer layer prepared for the simulation are as follows. In addition, the light source used at this time is a standard light source D65 close to daylight sunlight of about 6504K.

Second titanium oxide film (TiO ₂ ): 700 ± 70Å

2nd silicon oxide film (SiO ₂ ): 60 ± 20Å

First titanium oxide film (TiO ₂ ): 40 ± 20Å

1st silicon oxide film (SiO ₂ ): 80 ± 20Å

Protective film (SiNx): 3000 ± 300Å

Pixel electrode (Mo): 1500Å

As shown on the graph of FIG. 5, the reflectance is 49.13% for the conventional structure without the buffer layer. On the other hand, as a result of measuring the reflectance by inserting a buffer layer having a four-layer structure having the above conditions, it was possible to obtain a reflectance of 16.8 to 18.7%, which is reduced by 60% to 63.6% compared to the conventional reflectance.

Although the simulation did not consider the color filter substrate and the liquid crystal layer, the reflectance of the common electrode and the pixel electrode may be reduced when the buffer layer is inserted even if the virtual filter is considered.

In addition, the thickness of the pixel electrode, the passivation layer, and the buffer layer is an arbitrary value and is not limited in the embodiment of the present invention. Therefore, the thickness of the components (pixel electrode, protective film, buffer layer) will be determined within a range that minimizes the external reflected light.                     

FIG. 6 is a process flowchart illustrating a manufacturing process according to the first substrate of the transverse electric field type liquid crystal display device of FIG. 3, which is a plan view and a cross-sectional view.

First, as shown in 6a, after preparing a transparent single insulating substrate 110, such as glass, and then depositing a metal, such as Cu, Ti, Cr, Al, Mo, Ta, Al alloy through the sputtering method The gate electrode 101a, the gate line 101, the common electrode line 104, and the common electrodes 106a to 106c vertically branched from the common electrode line 104 are formed by patterning the gate electrode 101a, the gate line 101, and the common electrode line 104. Then, SiNx or SiOx is deposited on the entire surface of the substrate 110 including the gate line 101 and the common electrodes 106a to 106c by plasma CVD to form a gate insulating film 108.

Subsequently, as shown in FIG. 6B, an amorphous silicon and an n + amorphous silicon are stacked and patterned on the gate insulating layer 108 to form a semiconductor layer 105 on the gate electrode 101a. Subsequently, a metal such as Cu, Mo, Ta, Al, Cr, Ti, Al alloy is deposited on the semiconductor layer 105 and the gate insulating layer 108 by a sputtering method, and then patterned to form the gate line 101. Disposed on the pixel electrode line 114 and the semiconductor layer 105 that are disposed perpendicular to the data line 103 and overlap the common electrode line 104 together with the gate line 301. Source / drain electrodes 102a and 102b spaced a predetermined distance from each other and pixel electrodes 107a and 107b vertically branching from the pixel electrode line 114 are formed. Subsequently, an inorganic material such as SiNx or SiOx or an organic material such as benzocyclobutene or acrylic is coated on the entire surface of the substrate including the common electrodes 106a to 106c and the pixel electrodes 107a and 107b to form the protective film 111. Form.

6C, a first titanium oxide layer (TiO ₂ ; 130a) / first silicon oxide layer (SiO ₂ ; 130b) / second titanium oxide layer (TiO ₂ ; 130c) / is formed on the passivation layer 111. A second silicon oxide film (SiO ₂ ; 130d) is sequentially stacked to form a buffer layer 130. The stacking order of the buffer layers 130 may be reversed, and the insulating layers having different refractive indices of at least two layers or more may be repeatedly formed. In addition, the buffer layer 130 may be patterned to be left only in the upper regions of the common electrodes 106a to 106c and the pixel electrodes 107a and 107b. In addition, the buffer layer may be formed under the protective layer 111. However, it should be formed on the common electrodes 106a to 106c and the pixel electrodes 107a and 107b.

Thereafter, the substrate and the substrate on which the color filter is formed are bonded together to form a liquid crystal layer, thereby manufacturing a liquid crystal display device.

The present invention provides a transverse electric field type liquid crystal display device. In particular, in a transverse electric field liquid crystal display device made of an opaque metal material, there is provided a transverse electric field liquid crystal display device capable of reducing a mirror effect and a method of manufacturing the same. The basic concept of the present invention is to put the buffer on the pixel electrode and the common electrode, to minimize the mirror effect that the user feels due to the light reflected from the external light reflected on the pixel electrode and the common electrode made of an opaque metal material. In particular, the buffer layer repeatedly constitutes two or more insulating layers having different refractive indices, and the embodiment has been described with reference to materials and thicknesses of the insulating layers, but the present invention does not limit their materials and thicknesses. That is, any material and thickness can be used as long as the reflectance can be reduced.

As described above, according to the present invention, a mirror is formed by repeatedly forming two or more insulating layers having different refractive indices on the common electrode and the pixel electrode made of an opaque metal material to cancel the light reflected from the common electrode and the pixel electrode. The image quality can be further improved by reducing the effect and increasing the contrast ratio.

Claims (19)

First and second substrates; Gate lines and data lines disposed vertically and horizontally on the first substrate to define pixel regions; A common electrode and a pixel electrode disposed in the pixel region and generating a transverse electric field in the pixel region; A protective film formed on an entire surface of the substrate including the pixel electrode and the common electrode; And a buffer layer formed on the passivation layer, the buffer layer having alternately stacked insulating layers having different refractive indices of at least two layers or more from each other. The transverse electric field liquid crystal display of claim 1, further comprising a thin film transistor formed at an intersection of the gate line and the data line. 3. The thin film transistor of claim 2, wherein the thin film transistor comprises: a gate electrode connected to the gate line; A gate insulating film stacked on the gate electrode; A semiconductor layer formed on the gate insulating film; An ohmic contact layer formed on the semiconductor layer; And a source / drain electrode formed on the ohmic contact layer and connected to the data line. The transverse electric field liquid crystal display device according to claim 1, wherein the buffer layer comprises first and second insulating layers. The transverse electric field liquid crystal display device according to claim 4, wherein the first insulating layer is a silicon oxide film (SiO2), and the second insulating layer is a titanium oxide film (TiO2). 5. The transverse electric field liquid crystal display device according to claim 4, wherein the first insulating layer is a titanium oxide film (TiO2), and the second insulating layer is a silicon oxide film (SiO2). The method of claim 1, wherein the buffer layer is characterized by consisting of a quadruple insulating layer of the first silicon oxide (SiO2) / first titanium oxide (TiO2) / second silicon oxide (SiO2) / second titanium oxide (TiO2). Transverse electric field type liquid crystal display device. The transverse electric field liquid crystal display device according to claim 7, wherein the first silicon oxide film (SiO2) has a thickness of 500 kW to 900 kW. The transverse electric field liquid crystal display device according to claim 7, wherein the first titanium oxide film (TiO2) has a thickness of 20 kPa to 100 kPa. The transverse electric field liquid crystal display device according to claim 7, wherein the thickness of the second silicon oxide film (SiO2) is 10 kPa to 70 kPa. The transverse electric field liquid crystal display device according to claim 7, wherein the thickness of the second titanium oxide film (TiO2) is 10 kPa to 120 kPa. The transverse electric field liquid crystal display device according to claim 1, wherein the protective film is a silicon nitride film (SiNx). The transverse electric field liquid crystal display device according to claim 12, wherein the silicon nitride film (SiNx) has a thickness of 2000 kPa to 3000 kPa. The method of claim 1, further comprising: a black matrix formed on the second substrate; A color filter formed on the black matrix; And a liquid crystal layer formed between the first and second substrates. The transverse electric field liquid crystal display device of claim 1, wherein the common electrode is selected from a group consisting of Cu, Ti, Cr, Al, Mo, Ta, and Al alloys. The transverse electric field liquid crystal display device of claim 1, wherein the pixel electrode is selected from a group consisting of Cu, Mo, Ta, Al, Cr, Ti, and Al alloys. First and second substrates; Gate lines and data lines arranged vertically and horizontally on the first substrate; A switching element disposed at an intersection of the gate line and the data line; A pixel region defined by the gate line and the data line; A common electrode and a pixel electrode disposed in the pixel region and generating a transverse electric field in the pixel region; A protective film formed on an entire surface of the substrate including the pixel electrode and the common electrode; A buffer layer formed on the passivation layer and formed of four insulating layers of a first silicon oxide layer (SiO 2) / first titanium oxide layer (TiO 2) / second silicon oxide layer (SiO 2) / second titanium oxide layer (TiO 2); A transverse electric field liquid crystal display device comprising a liquid crystal layer formed between the first and second substrates. Preparing a transparent substrate; Forming a gate electrode, a gate line, and a common electrode; Forming an insulating film over the substrate on which the gate electrode, the gate line and the common electrode are formed, and then forming a source / drain electrode, a data line, and a pixel electrode thereon; Transverse field type liquid crystal comprising the step of forming a buffer layer by repeatedly stacking at least two or more silicon oxide film (SiO 2) / titanium oxide film (TiO 2) on a substrate including the source / drain electrodes, data lines, and pixel electrodes. Manufacturing method of display element. The method of claim 18, And forming a protective film on the entire surface of the substrate including the source / drain electrodes, the data lines, and the pixel electrodes.

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