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KR100954858B1 - A high-luminance led package and method for manufacturing thereof - Google Patents

A high-luminance led package and method for manufacturing thereof Download PDF

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Publication number
KR100954858B1
KR100954858B1 KR1020090049131A KR20090049131A KR100954858B1 KR 100954858 B1 KR100954858 B1 KR 100954858B1 KR 1020090049131 A KR1020090049131 A KR 1020090049131A KR 20090049131 A KR20090049131 A KR 20090049131A KR 100954858 B1 KR100954858 B1 KR 100954858B1
Authority
KR
South Korea
Prior art keywords
led chip
led package
high brightness
transparent
transparent film
Prior art date
Application number
KR1020090049131A
Other languages
Korean (ko)
Inventor
박충호
안종욱
Original Assignee
엘이디에스티 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority to KR1020090049131A priority Critical patent/KR100954858B1/en
Application granted granted Critical
Publication of KR100954858B1 publication Critical patent/KR100954858B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Led Device Packages (AREA)

Abstract

The present invention relates to a high brightness LED package capable of increasing the amount of light and driving low current by emitting light in the entire 360 ° direction.

The high brightness LED package of the present invention for this purpose is a transparent film, an insulating substrate formed on both sides on the transparent film spaced apart a predetermined distance, the metal wiring formed on each of the insulating substrate, and a gap is formed between the respective insulating substrates An LED chip mounted on an upper portion of the insulating substrate, a wire electrically connecting the LED chip to the metal wiring, a transparent molding resin having a spherical shape surrounding the outside of the transparent film and the outside of the LED chip; And a flexible terminal connected to an outer side of each of the insulating substrates and protruding to the outside of the transparent molding resin.

Description

High brightness LED package and manufacturing method {A HIGH-LUMINANCE LED PACKAGE AND METHOD FOR MANUFACTURING THEREOF}

The present invention relates to an LED package and a manufacturing method, and more particularly, to a high-brightness LED package and a method of manufacturing the same, which can emit light in a 360 ° overall direction, thereby increasing light quantity and driving a low current.

Light Emitting Diode (LED), or light emitting diode, is a diode that emits excess energy as light when the injected electrons and holes recombine. A red light emitting diode using GaAsP and the like, a green light emitting diode using GaP and InGaN And blue light emitting diodes using a / AlGaN double hetero structure.

Meanwhile, as a technology for generating white light from blue or UV LEDs using a combination of RGB LED elements or phosphors has been developed, the lighting field can be replaced with conventional light bulbs or fluorescent lamps, as well as backlights of LCD display devices. The scope of application is expanding, and the development of high brightness LEDs for this purpose is actively underway.

1 is a cross-sectional view of a general LED chip, wherein a buffer layer 11, an n-type semiconductor N layer 12, a photoactive layer 13, a p-type semiconductor layer 14, and a transparent electrode 15 on the front surface of a sapphire substrate 10 are illustrated. ), an n-type metal electrode 16 and a p-type metal electrode 17.

Meanwhile, LED chip package types include a lamp type and a surface mount type.

As the lamp type LED package, as shown in FIG. 2, the LED chip 21 is seated on a lead frame 20 having a predetermined shape, and ball bonding is performed by conductive wires 22 such as copper, gold, and aluminum. Or the wire frame (wire bonding) is connected to the lead frame 20, the upper surface has a structure solidified by the transparent silicon molding (23).

The lamp type LED has a high thermal resistance between the LED element and the package case and is difficult to attach a heat sink to the bottom of the package.

Meanwhile, in the surface mounted LED, the LED chip 31 is attached to the lower transparent substrate 30 such as Al 2 O 3, and the LED chip 31 is connected to the external electrode 32. The wire 33 is bonded, and a cup-shaped upper substrate 34 having a reflective surface is formed outside the LED chip 31, and the upper portion of the LED chip 31 is molded with an epoxy resin 35. .

In addition, a metal surface 36 is formed at the bottom of the LED chip 31 to release heat to the lower substrate 30 or the heat sink.

Surface-mount LED packages are widely used as high power LED packages because of their easy heat dissipation.

However, in the conventional LED package, since the LED chip is packaged on the translucent Al 2 O 3 substrate, light emitted from the LED chip is emitted only in the upper direction of the LED chip, and thus the light emission angle is limited to within 180 °.

In other words, the light emitted from the LED chip by the translucent substrate is lost.

In order to compensate for the light loss and increase the amount of light, a higher voltage is required to be applied, so that the amount of heat generated by the high current increases the necessity of attaching the heat sink and shortens the life of the LED package.

In addition, since the light is emitted only in the upper direction as described above, there is a disadvantage that the amount of light is low.

An object of the present invention for solving the disadvantages of the background technology is to provide a high brightness LED package and a method of manufacturing the same to increase the amount of light by emitting light emitted from the LED chip in all directions 360 °.

In addition, another object of the present invention is to provide a high brightness LED package and a method of manufacturing the same by having a high amount of light at a low current does not require a separate heat sink.

The high brightness LED package of the present invention for solving the above problems is a transparent film, an insulating substrate formed on both sides of the transparent film spaced apart by a predetermined distance, the metal wiring formed on each of the insulating substrate, and each of the insulating substrate LED chip mounted on top of the insulating substrate to form a gap in the wire, a wire electrically connecting the LED chip to the metal wiring, and the outer surface of the transparent film and the entire outer surface of the LED chip has a spherical shape It includes a transparent molding resin, and a flexible terminal connected to the outside of each of the insulating substrate and protruding out of the transparent molding resin.

An electrostatic discharge circuit may be further included on the transparent film.

The transparent film may be made of transparent silicon or polycarbonate.

Phosphor may be further applied to the LED chip.

The transparent molding resin may be made of any one selected from epoxy resin and transparent silicone.

In addition, the present invention for solving the technical problem is a high brightness LED package manufacturing method for manufacturing the LED package mounting the LED package on the substrate, forming an insulating substrate spaced a predetermined distance apart on both sides on the transparent film, Forming metal wirings on an insulating substrate, die bonding an LED chip on top of the insulating substrate so that a gap is formed between the respective insulating substrates, and forming the LED chip on the metal wiring and conductive line wires. Performing a wire bonding process of electrically connecting using the same, and applying a phosphor to the LED chip, covering the outside of the transparent film and the outside of the LED chip, and molding a transparent molding resin to have a spherical shape. Performing the process.

Here, the die bonding process may attach the LED chip to the insulating substrate through a conductive adhesive or a non-conductive adhesive.

In addition, the wire bonding process may be performed using an auto wire bonder or a manual wire bonder, and gold or aluminum may be used.

In the phosphor coating process, the color of the LED chip may be determined by mixing the phosphor and silicon according to the color of the LED chip, or the color of the LED chip may be determined by mixing the epoxy and the phosphor.

Alternatively, the LED chip may be die-bonded by combining a red chip, a blue chip, and a green chip to implement a desired color.

In addition, the coating process may be applied by mixing the phosphor and silicon to the LED chip and the entire structure of the transparent film or by mixing the phosphor and epoxy.

The present invention has the advantage that the brightness of the LED chip can be increased by increasing the amount of light by emitting light emitted from the LED chip in all directions 360 °.

In addition, the present invention has the advantage that by having a high amount of light at a low current does not require a separate heat sink can be reduced in size compared to the structure having a conventional heat sink.

In addition, there is an advantage that can increase the lifetime by reducing the amount of heat generated by obtaining a high amount of light at a low current.

4 is a cross-sectional structure of a high brightness LED package according to the present invention, the present invention has a surface-mount package structure.

Referring to FIG. 4, the high brightness LED package according to the present invention includes a transparent film 40, an insulating substrate 41, a metal wiring 42, an LED chip 43, a wire 44, and a transparent molding resin. 45, and a flexible terminal 46.

Here, the transparent film 40 serves as a substrate on which the LED chip 43 is mounted.

In this case, the transparent film 40 may be any material that penetrates light using transparency of a material such as transparent silicon or polycarbonate, glass, acrylic, ceramic, or the like.

Here, since transparent silicon has high light transmittance and thermal conductivity, and polycarbonate has excellent reflection performance against light and has excellent heat resistance and impact resistance, LEDs are used by using polycarbonate as the transparent film 40. It is desirable to reflect the light generated from the chip 43 effectively.

In addition, the insulating substrate 41 is provided on both sides of the transparent film 40 at a predetermined distance apart.

In this case, the insulating substrate 41 is electrically insulative, and in order to smoothly discharge heat generated from the LED chip 43, the insulating substrate 41 may be formed of a material having good thermal conductivity.

In addition, the metal wire 42 is formed on each insulating substrate 41, and is electrically connected to the LED chip 43 through wire bonding, which will be described later.

That is, the insulating substrate 41 and the metal wiring 42 formed thereon correspond to a printed circuit board (PCB) for electrical connection with the LED chip 43.

In addition, the LED chip 43 is mounted on each insulating substrate 41, but is attached by a transparent adhesive having conductive or non-conductive properties.

Here, in the embodiment of the present invention has been described as a structure in which one LED chip 43 is provided on the insulating substrate 41, a structure in which a plurality of LED chips 43 are spaced apart by a predetermined distance may be adopted.

In addition, although shown as a single LED chip in the drawings, through a modified embodiment, the red, blue, green LED chip can be mixed to implement a variety of colors or increase the intensity of the brightness, by applying a phosphor to a plurality of blue light emitting diodes white You can also implement

In addition, a phosphor may be further applied to the LED chip 43 in order to increase luminous efficiency.

In addition, an electrostatic discharge circuit may be further provided on the transparent film 40 to prevent the LED chip 43 from being damaged due to the electrostatic discharge (ESD), and specific details of the electrostatic discharge circuit are already known. Detailed description will be omitted.

At this time, since the LED chip 43 is mounted between the insulating substrates 41, a gap 49 is formed below the LED chip.

In addition, the LED chip 43 is electrically connected by bonding through the metal wire 42 and the wire 44, and has an n-type metal electrode 47 and a p-type metal electrode 48.

At this time, the structure of the LED chip except for each metal electrode is a technique well known to those skilled in the art, the detailed structure thereof and description thereof will be omitted.

Meanwhile, according to a characteristic aspect of the present invention, the transparent molding resin 45 is formed on the outer side of the transparent film 40, that is, the lower side and both sides of the transparent film 40, and the outer side of the LED chip 43, that is, the LED chip 43. Wrap the entire top and both sides of it.

At this time, the transparent molding resin 45 has a spherical shape, to maintain the shape of the entire structure.

And, the transparent molding resin 45 is made of a transparent material epoxy resin or transparent silicon (clear silicon) serves to uniformly emit light emitted from the LED chip 43 in all directions, that is, 360 ° all directions. .

As described above, since the present invention has a structure surrounding the entire structure including the transparent film on which the LED chip is mounted with the transparent molding resin, the light emitted from the LED chip is emitted in the entire 360 ° direction instead of only one direction.

Accordingly, the amount of light of the LED package is significantly increased compared to the conventional.

In addition, since the amount of light increases, the LED chip can emit light at a low current, so that a low heat generation effect is obtained and a separate heat sink is not attached.

In addition, it is possible to increase the life of the LED package by the low heat it is possible to reduce the work or cost for LED replacement.

In addition, in the past, the light is emitted only in one direction, but only the wall and the like may be attached. However, the present invention may be applied to various fields because the light is emitted in the 360 ° overall direction, and there is no limitation in the attachment.

On the other hand, the flexible terminal 46 is connected to the outside of each insulating substrate 41, and protrudes outside the transparent molding resin 45.

Hereinafter, a method of manufacturing a high brightness LED package of the present invention will be described with reference to FIG. 5.

First, an insulating substrate spaced apart from each other by a predetermined distance on both sides of the transparent film is formed (S10).

In this case, the transparent film may be any material that penetrates light using transparency of a material such as transparent silicon or polycarbonate, glass, acrylic, ceramic, or the like.

In addition, the insulating substrate is electrically insulating, but in order to smoothly discharge heat generated from the LED chip, it is preferable to form a good thermal conductivity material.

Then, metal wirings are formed on each insulating substrate (S20).

Here, although the present invention has been described as forming the metal wiring on the insulating substrate, it is possible to use an insulating substrate on which the metal wiring is already formed through another modified embodiment.

Subsequently, a die bonding process for mounting the LED chip between each insulating substrate is performed (S30).

Here, the die bonding process is performed by mounting the LED chip on the insulating substrate using a transparent adhesive having a conductive or non-conductive property.

In addition, the die chip may be die-bonded by combining a red chip, a blue chip, and a green chip, thereby implementing a desired color.

At this time, since the LED chip is mounted between the insulating substrate spaced a certain distance, a gap is formed in the lower portion of the LED chip.

Then, a wire bonding process of electrically connecting the LED chip using the metal wiring and the conductive line wire is performed (S40).

Here, the wire bonding process may be performed using an auto die bonder or a manual wire bonder.

In addition, the wire bonding step may be performed using gold (Au), aluminum (Al) or other conductive wire.

Thereafter, the phosphor is coated on the LED chip, and a coating process is performed to cover the outside of the transparent film and the entire outside of the LED chip and molding the transparent chip with a transparent molding resin to have a spherical shape (S50).

Here, in the phosphor coating process, the color of the LED chip may be determined by mixing the phosphor and silicon according to the color of the LED chip.

Alternatively, in the phosphor coating process, the color of the LED chip may be determined by mixing the epoxy and the phosphor.

 Meanwhile, the coating process may use a method of mixing phosphors and silicon on the LED chip and the entire structure of the transparent film, or a method of mixing phosphors and epoxy.

1 is a cross-sectional view of a typical LED chip.

Figure 2 is a cross-sectional view of a conventional lamp-type LED package.

Figure 3 is a surface-mounted LED package cross-sectional view of the seed.

Figure 4 is a high brightness LED package cross-sectional structure diagram according to the present invention.

5 is a flowchart sequentially showing a method of manufacturing a high brightness LED package according to the present invention.

<Description of the symbols for the main parts of the drawings>

40: transparent film

41: insulated substrate

42: metal wiring

43: LED chip

44: wire

45: transparent molding resin

46: flexible terminal

47: n-type metal electrode

48: p-type metal electrode

49: gap

Claims (14)

Transparent film; An insulating substrate formed on both sides of the transparent film at a predetermined distance from each other; Metal wiring formed on each of the insulating substrates; An LED chip mounted on an upper portion of the insulating substrate such that a gap is formed between the insulating substrates; A wire electrically connecting the LED chip to the metal wire; A transparent molding resin having a spherical shape surrounding the entire outer side of the transparent film and the LED chip; And a flexible terminal connected to an outer side of each of the insulating substrates and protruding to the outside of the transparent molding resin. The method of claim 1, High brightness LED package, characterized in that further comprising an electrostatic discharge circuit on the transparent film. The method of claim 1, The transparent film is a high brightness LED package, characterized in that made of transparent silicon. The method of claim 1, The transparent film is a high brightness LED package, characterized in that made of polycarbonate (polycarbonate). The method of claim 1, High brightness LED package, characterized in that the phosphor further coated on the LED chip. The method of claim 1, The transparent molding resin is a high brightness LED package, characterized in that made of any one selected from epoxy resin or transparent silicone. In the LED package manufacturing method for mounting the LED package on the substrate, Forming an insulating substrate spaced apart from each other on both sides on the transparent film (S10); Forming a metal wire on each of the insulating substrates (S20); Die-bonding (S30) mounting an LED chip on the insulating substrate so that a gap is formed between the insulating substrates; Performing a wire bonding process of electrically connecting the LED chip using a metal wire and a conductive line wire (S40); Applying a phosphor to the LED chip, covering the outside of the transparent film and the entire outside of the LED chip, and performing a coating process of molding with a transparent molding resin to have a spherical shape (S50), characterized in that it comprises a high brightness. LED package manufacturing method. The method of claim 7, wherein The die bonding process is a method of manufacturing a high brightness LED package, characterized in that for attaching the LED chip to the insulating substrate through a conductive adhesive or a non-conductive adhesive. The method of claim 7, wherein The wire bonding process is a high brightness LED package manufacturing method characterized in that performed using an auto wire bonder (bonder) or a manual wire bonder (bonder). The method of claim 9, The wire bonding process is a high brightness LED package manufacturing method characterized in that performed using gold (Au) or aluminum (Al). The method of claim 7, wherein The LED chip is a high brightness LED package manufacturing method characterized in that the die bonding by combining the red chip, blue chip, green chip. The method of claim 7, wherein The coating process is a method of manufacturing a high brightness LED package, characterized in that the coating by coating the phosphor and silicon on the LED chip and the entire structure of the transparent film or by mixing the phosphor and epoxy. delete delete
KR1020090049131A 2009-06-03 2009-06-03 A high-luminance led package and method for manufacturing thereof KR100954858B1 (en)

Priority Applications (1)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101365625B1 (en) * 2007-06-21 2014-02-25 서울반도체 주식회사 Bidirectional light emitting diode
CN103972354A (en) * 2013-01-28 2014-08-06 宏齐科技股份有限公司 White-light encapsulation for multiple blue-light LEDs
KR102091338B1 (en) * 2018-11-15 2020-03-19 조성은 Laser diode package

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090004646U (en) * 2007-11-12 2009-05-15 유니티 옵토 테크노로지 주식회사 Structure of omnidirectional light-emitting diode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090004646U (en) * 2007-11-12 2009-05-15 유니티 옵토 테크노로지 주식회사 Structure of omnidirectional light-emitting diode

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101365625B1 (en) * 2007-06-21 2014-02-25 서울반도체 주식회사 Bidirectional light emitting diode
CN103972354A (en) * 2013-01-28 2014-08-06 宏齐科技股份有限公司 White-light encapsulation for multiple blue-light LEDs
KR102091338B1 (en) * 2018-11-15 2020-03-19 조성은 Laser diode package

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