KR100946159B1 - Atomic Layer Deposition Device - Google Patents

Abstract

Disclosed is a thin film deposition apparatus capable of improving deposition quality by preventing a reaction gas from being mixed with each other. The thin film deposition apparatus according to the present invention includes a housing, an injection unit for injecting gas into the housing, a susceptor provided in the housing, and a plurality of substrates seated in a circumferential direction, and a central empty space formed by the plurality of substrates. Is provided as a member separate from the susceptor, a plurality of suction holes are formed in the side communication with the outside of the housing, the suction hole is formed at a position equal to or higher than the substrate seated on the susceptor It includes a unit. Therefore, according to the present invention, it is possible to prevent the phenomenon in which the reaction gases are mixed with each other to improve the deposition quality.

Thin film deposition apparatus, susceptor, suction unit, suction hole, suction flow path

Description

Thin Film Deposition Device {Atomic Layer Deposition Device}

The present invention relates to a thin film deposition apparatus, and more particularly, to a thin film deposition apparatus which improves the deposition quality by preventing a phenomenon in which different reaction gases are mixed by improving the structure.

In general, in order to deposit a thin film having a predetermined thickness on a substrate such as a semiconductor wafer or glass, physical vapor deposition (PVD) using physical collision such as sputtering and chemical vapor deposition using chemical reaction A thin film production method using (CVD; Chemical Vapor Deposition) is used.

Here, chemical vapor deposition includes atmospheric pressure chemical vapor deposition (APCVD), low pressure chemical vapor deposition (LPCVD), plasma organic chemical vapor deposition (Plasma Enhanced CVD), and the like. Plasma organic chemical vapor deposition has been widely used due to its advantages and fast film formation.

However, as the design rule of the semiconductor device is drastically reduced, a thin film of a fine pattern is required, and the step of the region where the thin film is formed also becomes very large. As a result, the use of an atomic layer deposition (ALD) method, which is capable of forming a very fine pattern of atomic layer thickness very uniformly and has excellent step coverage, has been increasing. That is, it is used for the deposition of thin films such as gate oxide films, capacitor dielectric films and diffusion barrier films in semiconductor manufacturing processes.

The atomic layer deposition method (ALD) is similar to the conventional chemical vapor deposition (CVD) method in that it uses chemical reactions between gas molecules. However, the conventional chemical vapor deposition method is to inject a plurality of gas molecules into the chamber at the same time to deposit the reaction product generated above the wafer onto the wafer, whereas the atomic layer deposition method is to inject one gaseous material into the chamber. It is then different in that it purges it, leaving only the gas that is physically adsorbed on top of the heated wafer, and then injecting another gaseous material to deposit the chemical reaction product that occurs only on the top of the wafer.

The thin film implemented through such an atomic layer deposition method has a very excellent step coverage characteristic, and in particular, has the advantage that it is possible to implement a pure thin film with a very low impurity content, which is widely attracting attention.

1 and 2, an example of a conventional thin film deposition apparatus for depositing a predetermined film on the surface of a substrate by the atomic layer deposition method as described above is as follows.

Conventional thin film deposition apparatus, as shown in Figure 1, is provided with a rotary injector on the upper portion of the process chamber (C).

The rotatable injector includes a drive shaft 10, a housing 20, and an injector 30. The injector 30 rotates in the process chamber C and injects reaction gas and purge gas, thereby providing a substrate (W). A thin film is deposited on it.

In contrast, the susceptor 40 is rotated instead of fixing the injection device, and may be configured to inject the reaction gas and the purge gas onto the substrate (W). In addition, since the distance between the rotatable injection device and the susceptor 40 needs to be adjusted according to the process, the susceptor 40 may be configured to move in the vertical direction. On the other hand, the gas discharge port 80 for discharging the internal gas is provided below the process chamber (C).

The susceptor 40 is horizontally installed in the process chamber C, and a plurality of support parts 50 on which the substrate W is seated are placed on the susceptor 40. In addition, a fixing part 60 is installed on the support part 50 to prevent horizontal movement of the substrate W.

Meanwhile, a through hole communicating with the gas outlet 80 may be formed at a portion of the susceptor 40 where the support part 50 is not placed. In addition, a heater 70 is provided inside the support part 50 to suppress the redeposition of the thin film so that the substrate W can be heated.

2 is a view showing the configuration of the injector 30 for injecting the reaction gas and purge gas, the injector 30 is formed with a flow path through which the reaction gas and purge gas flow, the end of each injector 30 On the side, a plurality of injection holes 32 for gas injection are formed.

The injector 30 configured as described above sprays the reaction gas or purge gas onto the substrate W seated on the support part 50 while rotating in the axial direction. Specifically, the injector 30 as shown in FIG. 2 receives the first reaction gas, the purge gas, the second reaction gas, and the purge gas, respectively, and injects them onto the substrate W. Accordingly, each substrate W In the reaction gas and the purge gas is sequentially injected to perform the film forming process.

However, in the conventional thin film deposition apparatus, since the injector rotates at high speed to inject the reaction gas and the purge gas, different kinds of reaction gases are mixed with each other, the concentration is diluted, and unnecessary reaction occurs, resulting in the deposition quality of the substrate. There was a problem falling.

In addition, the reaction phenomenon of the reaction gas becomes more serious as the reaction gases injected onto the substrate are not smoothly discharged to the outside and remain in the process chamber.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a thin film deposition apparatus that can effectively inhale the injected gas to effectively discharge the injected gas.

Another object of the present invention is to provide a thin film deposition apparatus which improves deposition quality by preventing a phenomenon in which different reaction gases are mixed.

In order to achieve the above object, the present invention provides a housing, an injection unit for injecting gas into the housing, provided in the housing, the susceptor is a plurality of substrates are seated in the circumferential direction and the plurality of substrates are formed The substrate is provided as a separate member from the susceptor in the empty space at the center, and a plurality of suction holes are formed at a side thereof to communicate with the outside of the housing. Provided is a thin film deposition apparatus including a suction unit formed at a position equal to or higher.

The suction unit may protrude downward from an upper portion of the housing. And the suction hole may be formed at a predetermined interval on the side of the suction unit.

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Alternatively, the suction unit may protrude upward from the susceptor, and the suction holes may be formed at predetermined intervals on the side surface of the suction unit.

In addition, the suction unit may be configured, for example, in a cylindrical shape, and a support portion protruding a predetermined height from the susceptor surface may be provided at a portion where the substrate is seated in the susceptor.

The thin film deposition apparatus according to the present invention having the above configuration has the following effects.

First, by forming a flow path for suction of residual gas in the central empty space of the substrate disposed along the circumferential direction, it is possible to effectively discharge the residual gas injected to the substrate without taking a separate space for gas discharge have.

Accordingly, there is an advantage that can significantly reduce the phenomenon that the reaction gases injected to the substrate are mixed with each other.

In particular, the suction flow passage communicating with the suction hole is allowed to communicate with the external vacuum region, so that the residual gas can be sucked more efficiently. In addition, by placing the suction hole at a position higher than the substrate, it is possible to discharge the residual gas more smoothly.

Secondly, by significantly reducing the mixing phenomenon between the reaction gases generated by the remaining of the reactive gases injected into the substrate, it is possible to effectively perform the thin film deposition of the substrate and as a result has the advantage of improving the deposition quality.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description of this embodiment, the same name and the same reference numerals are used for the same configuration and additional description thereof will be omitted.

Referring to Figure 3, the configuration of a thin film deposition apparatus according to a first embodiment of the present invention will be described.

The thin film deposition apparatus according to the present exemplary embodiment includes a housing 160, an injection unit 150, a susceptor 110, and a suction unit 130.

The housing 160 provides a process chamber C, which is a space for gas injection, to accommodate the susceptor 110 on which the substrate W is placed.

The injection unit 150 injects reaction gas or purge gas into the process chamber C inside the housing 160 to perform thin film deposition on the substrate W. In the present embodiment, the injection unit 150 is external to the injection unit 150. Supply holes 152 connected to the gas supply pipe of the plurality of injection holes 156 for injecting the supplied gas on the substrate is formed.

 Meanwhile, in this embodiment, as shown in FIG. 3, a flow path hole 154 is formed between the supply hole 152 and the injection hole 156.

Here, the detailed configuration of the injection unit 150 may be modified in various ways, for example, the rotary injection method of the type shown in Figures 1 and 2, or different types of the whole process chamber (C) A method of spraying the gas sequentially may be applied.

The susceptor 110 is disposed in a horizontal direction to allow the plurality of substrates W to be seated, and FIG. 4 shows that the susceptor 110 is formed in a disc shape, and thus the plurality of substrates W are disposed along the circumferential direction. .

In this embodiment, as shown in FIG. 4, a plurality of support parts 120 are provided on the susceptor 110, and the substrates W are mounted on the respective support parts 120.

On the other hand, when a plurality of substrates are arranged along the circumferential direction, an empty space is formed in the center portion. The suction unit 130 is thus disposed in the circumferential direction of the plurality of substrates (W) is provided in the remaining empty space in the center, and serves to suck the residual gas injected to the substrate (W).

In this way, the suction unit 130 is provided in the remaining empty space after the substrate is disposed, it does not occupy a separate space for the placement of the suction unit 130 can increase the space utilization.

The specific shape of the suction unit 130 can be variously modified, as shown in FIG. 3 in this embodiment, the susceptor 110 is composed of a separate member from the upper portion of the housing 160 It is made in the form of protruding downward.

In addition, a suction hole 132 is formed at an outer surface of the suction unit 130 to suck residual gas injected into the substrate W. In this embodiment, the suction holes 132 are formed in plural, and are disposed at predetermined intervals on the side portions of the suction unit 130.

As shown in FIG. 4, the suction hole 132 is formed at a position higher than the substrate W seated on the susceptor 110 so that the gas injected to the substrate W can be effectively discharged. It is preferable.

On the other hand, the inside of the suction unit 130, the inner passage 134 is formed in communication with the above-described suction hole 132, the guide pipe connected to the outside the residual gas sucked through the suction hole 132 ( 138). Here, the guide tube 138 is in communication with the external vacuum area, it is preferable for the suction hole 132 on the suction unit 130 to be a vacuum suction for smooth gas discharge.

The specific arrangement of the internal passage 134 in the suction unit may be variously modified according to design conditions.

In this embodiment, the auxiliary suction unit 140 is provided at the side surface of the housing 160, and is configured to assist the external discharge of residual gas together with the suction unit 130.

The auxiliary suction unit 140 may be connected to the auxiliary suction hole 142 and the auxiliary suction hole 142 and include an auxiliary flow path 144 communicating with the outside.

Next, referring to Figures 4 and 5, the configuration of a thin film deposition apparatus according to a second embodiment of the present invention will be described. 4 is a configuration diagram illustrating a part of the thin film deposition apparatus according to the present embodiment, and FIG. 5 is a perspective view illustrating the susceptor and the suction unit of FIG. 4.

Similar to the first embodiment described above, the present embodiment also includes a housing 260, an injection unit 150 (see FIG. 3), a susceptor 210, and a suction unit 230. In addition, in the present embodiment, the suction unit 130 is disposed on a central empty space in which the substrate W remains while being disposed in the circumferential direction.

Therefore, in the present embodiment, since the suction unit 230 is provided between the substrate and the remaining empty space, the suction unit 230 does not occupy a separate space for the placement of the suction unit 230, thereby increasing the space utilization.

Meanwhile, in the present embodiment, the suction unit 230 is formed as a separate member from the susceptor 210 and is provided on the susceptor 210, instead of the susceptor 210 on the susceptor 210. Protruding by a certain height to the top of the formed.

As shown in FIGS. 4 and 5, the suction unit 230 protrudes upward from the bottom of the susceptor 210 by a predetermined height, and a plurality of suctions are provided on the outer surface of the suction unit 230. The holes 232 are arranged at regular intervals.

The suction hole 232 is connected to the internal flow path 234 formed in the suction unit 230 and the suction flow path 112 located in the susceptor 210, and thus within the process chamber C. Residual gas is configured to be discharged to the outside via the suction hole 132, the inner passage 234 and the suction passage 112 in sequence.

On the other hand, one side of the housing 160 has a secondary gas outlet 240 for assisting the discharge of residual gas is formed, and is injected onto the substrate (W) with the suction unit 230 in the center of the susceptor 210 Allow residual gas to be discharged to the outside smoothly.

And, similar to the above-described embodiment, between the susceptor 210 and the substrate (W), a support 220 for mounting the substrate (W) may be provided.

The present invention is not limited to the above-described embodiments, and as can be seen in the appended claims, those skilled in the art can make modifications without departing from the spirit of the present invention, and such modifications are possible. Belongs to the scope of.

1 is a block diagram showing a conventional thin film deposition apparatus;

2 is a partial perspective view of the injector of FIG. 1;

3 is a cross-sectional view showing a thin film deposition apparatus according to a first embodiment of the present invention;

4 is a cross-sectional view showing a thin film deposition apparatus according to a second embodiment of the present invention;

5 is a perspective view showing the susceptor and the suction unit of FIG.

<Explanation of Signs of Major Parts of Drawings>

110: susceptor 120: support

130: suction unit 132: suction hole

134: internal passage 138: guide

140: auxiliary outlet 150: injection unit

152: supply hole 154: communication hole

156: injection hole C: process chamber

W: Substrate

Claims (5)

housing; An injection unit for injecting gas into the housing; A susceptor provided in the housing and having a plurality of substrates seated in a circumferential direction; And A plurality of suction holes protruding from the upper portion of the housing to the lower portion in a central empty space formed by the plurality of substrates and provided as a separate member from the susceptor, and communicating with the outside of the housing at predetermined intervals on the side portion A suction unit formed at a position equal to or higher than a substrate seated on the susceptor; Thin film deposition apparatus comprising a. delete delete delete delete

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