KR100916609B1 - 솔더 라이팅을 이용한 다이본딩 방법 - Google Patents
솔더 라이팅을 이용한 다이본딩 방법 Download PDFInfo
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- KR100916609B1 KR100916609B1 KR1020090043499A KR20090043499A KR100916609B1 KR 100916609 B1 KR100916609 B1 KR 100916609B1 KR 1020090043499 A KR1020090043499 A KR 1020090043499A KR 20090043499 A KR20090043499 A KR 20090043499A KR 100916609 B1 KR100916609 B1 KR 100916609B1
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- Prior art keywords
- solder
- feeder
- line
- delay
- preformer
- Prior art date
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- 229910000679 solder Inorganic materials 0.000 title claims abstract description 163
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000005476 soldering Methods 0.000 claims description 13
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 12
- 239000004593 Epoxy Substances 0.000 description 6
- 239000011800 void material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L2224/743—Apparatus for manufacturing layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Die Bonding (AREA)
Abstract
Description
Claims (5)
- X, Y 축의 테이블이 정지된 상태에서 피더 모터(Feeder Moter)가 동작하여 노즐을 통해 솔더 와이어(Solder Wire)를 하강시키는 단계와;상기 솔더 와이어가 리드 프레임에 접속하는 순간에, 솔더 터치업 지연(Solder Touchup Delay) 만큼 피더를 정지시키는 단계와;상기 솔더 터치업 지연이 종료되면, X, Y축의 테이블이 동시에 구동되어, 비포 라인(Before Line) 피드 길이량 만큼 피더가 동작하여, 선 또는 특정 형태에 부합되게 솔더 와이어를 리드 프레임 상에서 녹이는 단계와;비포 라인 지연 만큼 프리포머 피더가 정지되었다가 솔더 피드 길이량 만큼 피더가 동작하여, 솔더 와이어를 리드 프레임 상에서 녹이는 단계와;에프터 라인(After Line) 지연 만큼 프리포머 피더가 정지되었다가, 에프터 라인 피드 길이량 만큼 피더가 동작하여, 솔더 와이어를 리드 프레임 상에서 녹이는 단계 및;솔더 멜트 오프 지연만큼 프리포머 피더가 정지되었다가 솔더 역진 길이만큼 피더 모터가 역회전하여 솔더 와이어를 원위치로 복귀시키는 단계로 구성되는 것을 특징으로 하는 솔더 라이팅을 이용한 다이본딩 방법.
- 제 1항에 있어서, 상기 솔더 피드 길이량이 무효가 되면, 프리포머 X, Y 축 의 테이블의 모터가 동작하는 시간만큼 솔더 와이어가 피드되는 것을 특징으로 하는 솔더 라이팅을 이용한 다이본딩 방법.
- 제 1항에 있어서, 상기 솔더 터치업 지연이 종료되면, 비포 라인 피드 길이량 만큼 피더가 동작하여 솔더 와이어를 리드 프레임 상에서 녹이는 단계는,비포 라인 피드 속도 및 비포 라인 피드 길이 데이터를 송신 및 수신하는 단계 및;상기 비포 라인 피드 속도 및 비포 라인 피드 길이 데이터에 의거, 프리포머 피더 모터를 구동시키거나 또는 정지시키는 단계를 포함하는 것을 특징으로 하는 솔더 라이팅을 이용한 다이본딩 방법.
- 제 1항에 있어서, 상기 비포 라인 지연 만큼 프리포머 피더가 정지되었다가 솔더 피드 길이량 만큼 피더가 동작하여, 솔더 와이어를 리드 프레임 상에서 녹이는 단계는,비포 라인 지연 데이터를 송신 및 수신하는 단계와;상기 비포 라인 지연 데이터에 의거, 프리포머 피더 모터를 정지시키는 단계와;라인 솔더링 피드 속도 및 라인 솔더링 형 데이터를 송신 및 수신하는 단계 및;상기 라인 솔더링 피드 속도 및 라인 솔더링 형 데이터에 의거, 프리포머 X, Y 축의 테이블의 피더 모터를 구동시키거나 또는 정지시키는 단계를 포함하는 것을 특징으로 하는 솔더 라이팅을 이용한 다이본딩 방법.
- 제 1항에 있어서, 상기 에프터 라인(After Line) 지연 만큼 프리포머 피더가 정지되었다가, 에프터 라인 피드 길이량 만큼 피더가 동작하여, 솔더 와이어를 리드 프레임 상에서 녹이는 단계는,에프터 라인 지연 데이터를 송신 및 수신하는 단계와;상기 에프터 라인 지연 데이터에 의거, 프리포머 X, Y 축의 테이블의 피더 모터를 정지시키는 단계와;에프터 라인 피드 속도 및 에프터 라인 피드 길이 데이터를 송신 및 수신하는 단계 및;상기 에프터 라인 피드 속도 및 에프터 라인 피드 길이 데이터에 의거, 프리포머 피더 모터를 구동시키거나 또는 정지시키는 단계를 포함하는 것을 특징으로 하는 솔더 라이팅을 이용한 다이본딩 방법.
Priority Applications (2)
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KR1020090043499A KR100916609B1 (ko) | 2009-05-19 | 2009-05-19 | 솔더 라이팅을 이용한 다이본딩 방법 |
CN2010101741332A CN101890548B (zh) | 2009-05-19 | 2010-05-13 | 焊料印刷式管芯焊接方法 |
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KR1020090043499A KR100916609B1 (ko) | 2009-05-19 | 2009-05-19 | 솔더 라이팅을 이용한 다이본딩 방법 |
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CN (1) | CN101890548B (ko) |
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CN108381065A (zh) * | 2018-01-30 | 2018-08-10 | 福建聚云科技股份有限公司 | 一种电子器件印刷装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007311653A (ja) | 2006-05-19 | 2007-11-29 | Canon Machinery Inc | 半田塗布方法および半田塗布ユニット、ダイボンダー |
JP2007335478A (ja) | 2006-06-13 | 2007-12-27 | Matsushita Electric Ind Co Ltd | はんだ供給装置およびこのはんだ供給装置を使用した半導体装置の製造方法 |
JP2008192964A (ja) | 2007-02-07 | 2008-08-21 | Denso Corp | 半導体チップの実装方法 |
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JP4048012B2 (ja) * | 1999-12-21 | 2008-02-13 | キヤノンマシナリー株式会社 | ダイボンダ |
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- 2009-05-19 KR KR1020090043499A patent/KR100916609B1/ko active IP Right Grant
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007311653A (ja) | 2006-05-19 | 2007-11-29 | Canon Machinery Inc | 半田塗布方法および半田塗布ユニット、ダイボンダー |
JP2007335478A (ja) | 2006-06-13 | 2007-12-27 | Matsushita Electric Ind Co Ltd | はんだ供給装置およびこのはんだ供給装置を使用した半導体装置の製造方法 |
JP2008192964A (ja) | 2007-02-07 | 2008-08-21 | Denso Corp | 半導体チップの実装方法 |
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Publication number | Publication date |
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CN101890548A (zh) | 2010-11-24 |
CN101890548B (zh) | 2013-03-27 |
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