KR100902080B1 - Insulator electric conduction plate, method of manufacturing the insulator electric conduction plate - Google Patents

Abstract

An insulator electric conductive plate of one plate unit and a manufacturing method thereof are provided to remove a leakage current generated in a through hole according to an insulation degree and process accuracy by setting a conductive plate of one plate unit as a nonconductor. A conductive plate(10) of one plate unit has a through hole by a micro blast process and a half hole of an inverted triangle. The half hole formed in an upper side is filled with the metal and forms an upper half conductive wiring(11). A conductive pin is contacted in the upper half conductive wiring. A lower half hole serves as a lower half via hole(13) and a connecting pin of an interposer is inserted. A half hole of the conductive plate of one plate unit includes mutually stepped holes.

Description

Insulator Electric Conduction Plate, Method of manufacturing the Insulator Electric Conduction Plate

The present invention relates to a method for manufacturing a plate-by-plate unit plate of a plate pin head for energizing a non-conductor glass plate through a plate pin for semiconductor chip inspection using micro blast processing characteristics. It is assembled into a structure in which the conductive pin is precisely bonded at the wiring hole position and the connecting pin is inserted into the half hole on the bottom surface. The board is a board unit that selects good and defective products by inspecting the semiconductor chip patterned on the wafer for electrical characteristics. It is made of an energizing plate head probe card.

The alignment plate of the current-carrying pin head assembly is used as a current-carrying pin head alignment plate by processing through-holes using a silicon plate, which is a semiconductor, by dry etching. The resistivity of the silicon plate was deposited with an oxide film on the front surface of the silicon plate and through-holes in order to block conduction on the conduction plate. In this case, a problem arises that the insulating film falls, and a leakage current is generated when the current supply pin is assembled into the heat exchanger plate through-hole.

Due to the leakage current problem of the silicon plate through-hole wall, the heat exchanger plate of the current-carrying pin head assembly is processed into a non-conductor soda-lime glass plate, a pyrex glass plate, and a quartz glass plate to insert the electricity supply pin into the plate-by-plate unit hole. Used as a pinhead assembly.

The current-carrying plate of the current-carrying pin head assembly is to uniformly and precisely process the current-carrying plate by using the micro blast method, which is a micro process using high precision microparticles.

The problem to be solved by the present invention is that the current-carrying plate processed through the silicon substrate by through-hole dry etching has an oxide film based on the through-hole etching precision when etching the silicon substrate to 500 μm or more, the uniformity of each through-hole etching size, and the photoresist residue used during the process. This problem does not deposit evenly and leakage current occurs.

Another problem of the present invention is that the silicon substrate is not able to apply the current-carrying plate by the unit by the difference in precision and uniformity of each through-hole etched.

The current-carrying plate used as the current-carrying pin head assembly is a silicon substrate, which is etched to a certain depth on the upper surface, flipped and etched to a certain depth on the lower surface to etch through holes in both directions, thereby eliminating the problem of roughness in the through-hole wall during etching and leakage current. In order to solve the problem of depositing an oxide film on the front surface of the silicon plate and through hole wall, the current-carrying plate, which is the current-carrying plate head, is made of soda-lime glass plate, quartz glass plate, and Pyrex glass plate which are insulators. The micro blasting method realizes fine particles through compressed air through through hole processing, half hole processing, groove processing, and slit groove processing, and embeds metal in half holes or through holes, and the dirt per plate. Similarly, it is processed by the energization wiring of the energization plate.

According to the present invention, it is used to select and process a single plate unit conducting plate, which is a conducting pin head, as a non-conductor, and forms a conducting wiring by embedding a metal only in the half hole of the upper surface in an approximately inverted triangular half hole formed with microblast processing characteristics. The pins are precisely bonded to the energizing wiring, and the lower half holes become via holes, so that the connecting pins of the interposers are inserted into the energizing pin heads. In addition, the holes and holes are stepped on the top of the energizing plate to process the half holes, and the holes are stepped to cope with the narrow pitch of the semiconductor chip inspection pad pitch.

By selecting the non-conductor plate as a non-conductor, it is possible to process the same through hole for each dirt in the plate-by-plate plate by eliminating the leakage current generated in the through hole according to the degree of insulation and processing accuracy of the silicon plate when using the silicon plate.

If the non-conductor is first processed from the upper surface by the micro blasting method, the half hole is processed by the micro blast processing method, and then reversed. When the half hole is processed by the micro blast processing method on the lower surface, the half hole is penetrated by the upper half hole and the lower half. It is roughly processed into an inverted cylindrical triangle.

That is, the upper half circle of the upper half hole is larger and the circle of the end hole is smaller in size than the upper half circle of the starting hole.The lower half of the half hole is larger than the starting circle of the circle. The processed through-hole shape is small in size and the upper half hole and the lower half hole are smaller in the middle part, so that the upper half hole and the lower half hole penetrate each other in an inverted cylindrical triangle shape.

In addition, if the selected non-conductor is processed through the half through-hole by the microblast processing method from the top surface and inverted, and the through-hole through the micro blast processing method on the lower surface by the second side, the half through-opening hole and the bottom through-hole through the top surface are penetrated. It is processed into a cylindrical rectangle.

The micro blasting method is spray processing using fine particles by compressed air, and the non-conductor is selected from a soda-lime glass plate, a quartz glass plate, a pyrex glass plate, and processed into a single plate current-carrying plate (10, 20, 30, 50). .

The microparticles used in the micro blasting method are green carbites, slurries, nanopowders, and fine sands that are used as through abrasives.

The plate-bearing plate (10,30) is a micro blasting method to finely process the half-holes, through-holes.

The plate unit current-carrying plate (20, 50) is a micro blasting process to finely process the half through opening, the through opening.

It is to increase the support strength of the plate-by-plate plate 10, 20, 30 by butt-bonding the plate plate of the plate-by-plate unit 10, 20, 30.

The bonding method of the plate-by-plate unit 10, 20, 30 and the plate-by-plate unit 50 is to bond by UV irradiation bonding, enodic bonding or high temperature thermocompression bonding using an organic adhesive. .

The hole arrangement of the current-carrying plate 10 and 30 is not arranged in a row so as to correspond to the minimum size of micro blast processing and the test pad pitch of the semiconductor chip. It is excreted to be formed to be processed.

The holes a, holes b, and holes c determine the number of hole steps and the hole positions according to the test pad pitch of the semiconductor chip.

The total number of semiconductor chips formed in the wafer to be processed by inspecting the half holes of the plate-bearing plate 10 and 30 and the penetrating openings of the plate-by-plate plate 20 by individual hole formation by the number of inspection pins of one semiconductor chip. The hole is to be machined.

The through-holes of the half-holes and the plate-by-plate plate 20 of the plate-by-plate unit 10 and 30 are filled with metal, and the pins are connected to the plate.

The metal to be embedded in the half hole of the plate-bearing plate 10 and 30 and the through opening of the plate-shaped platen plate 20 is selected from one of Cu, Au, and Ag.

The metal buried in the half hole of the plate-by-plate plate 10 and 30 and the through hole of the plate plate plate 20 is selected by E-beam deposition, sputtering deposition, electroplating, electroless plating. Will be.

The conductive pins are connected to and fixed to the conductive wires of the single plate unit conductive plates 10, 20 and 30, and the conductive pins are energized by the interposer.

The size of the plate current plate (10, 20, 30) and the plate plate 50 of the plate unit is the size of the current pin head 100 is determined according to the number of inspection of the wafer to be inspected and also inspect the wafer at once It can be as big as it can be.

Referring to the accompanying drawings, the manufacturing unit obtained from the microblast processing characteristics of the plate-by-plate unit 10, 20, 30, 50 of the present invention will be described in detail as follows.

Micro Machining Example 1

The single plate current conducting plate 10 is a non-conductor, which processes through-holes with microblast processing characteristics, and embeds a metal into an upper half hole of a substantially inverted triangular cylindrical shape (43), which is formed with microblast processing characteristics. The wiring 11 is formed to accurately connect the conduction pin to the upper half conducting wiring 11, and the lower half of the lower hole becomes the lower via hole 13 so that the connecting pin of the interposer is inserted into the conducting pin head. will be.

FIG. 1 illustrates a structure in which the upper half conducting wiring is enlarged in the unit of dirt by being filled with metal in the upper half hole in the plate-shaped conducting plate 10 and processed into the upper half conducting wiring 11.

The upper plate half-hole is filled with metal to form the upper half-conducting wiring 11, and the lower half-hole 13 becomes a half-via hole when the plate unit current-carrying plate 10 is embedded.

The arrangement of the half holes of the plate unit current conducting plate 10 is to be processed such that a plurality of steps are arranged in steps such as the holes 11a, 11b, and 11c.

Steps a to j of Figure 2 is a flow chart illustrating in detail the manufacturing process of the plate-by-plate unit 10 as an embodiment and the size of the plate to the step-by-step plate 10 is a unit.

As described in step a, the manufacturing of the plate-by-plate unit 10 is performed by laminating a dry film resist on the selected non-conductive upper surface.

A photomask in which a hole pattern is formed is prepared as in step b, and the top half hole shape and size are patterned by exposing and developing the photomask on the upper surface of the plate-coating unit current-carrying plate 10 to which the dry film resist is attached.

As in step c, the upper half hole is micro-processed on the upper surface of the plate-by-plate unit 10 by the micro blasting method.

As in step d, the dry film resist remaining on the upper surface of the plate-by-plate unit 10 is removed.

In step e, the metal, which becomes the upper half conducting wiring 11, is embedded in the upper half hole of the plate unit conducting plate 10.

As in step f, the upper half hole is laminated with a dry film resist on the lower surface of the current-carrying unit 10.

In step g, a photomask having a hole pattern is prepared, and the bottom half hole 13 is patterned by exposing and developing the photomask on the lower surface of the plate-shaped conducting plate 10 to which the dry film resist is attached.

As shown in step h, the bottom surface of the plate-by-plate unit 10 is subjected to fine processing by the micro blasting method so that the half hole 13 is coincident with the top half hole.

As in step i, the dry film resist remaining on the lower surface of the plate-by-plate unit 10 is removed.

As shown in step j, the upper half conducting wiring 11 and the lower half hole 13 formed on the solenoid conducting plate 10 are cleaned.

Micro Machining Example 2

The plate-by-plate conduction plate 20 processes the through opening with a microblast processing characteristic by selecting a non-conductor, and the half through opening and the bottom surface of the upper surface of the half through opening having a roughly reverse cylindrical shape 45 formed by the microblast processing characteristic. The through-opening conduction wiring 29 is formed by burying the metal in the half-opening opening of the through-hole so that the conduction pin is precisely bonded to the through-opening conduction wiring of the upper surface. In addition, the connecting pin of the interposer is a conductive pin head (not shown) that is in contact with the through-opening conduction wiring (29).

3 is a view illustrating a structure in which the upper half conducting wiring is enlarged in dirt units while the metal is embedded in the upper half through opening and the lower opening through the through-opening conduction wiring 29 in the plate-by-plate conduction plate 20. .

The plate unit current-carrying plate 20 is to process the lower half through opening after the micro blasting the upper half through opening.

The arrangement of the through openings of the baffle through plate 20 is to process the plurality of through openings in a single row.

The slit groove 41 is formed on the left and right half through openings formed on the upper surface of the plate-by-plate unit 20.

The slit grooves 41 on the left and right half through openings formed on the upper surface of the plate unit conduction plate 20 are used to precisely position the alignment pins when the conduction pins are joined to the through hole openings 29.

In addition, the upper plate half-hole and the lower half-hole are through-via holes 59 of the plate-by-plate unit 50.

The arrangement of the through-via holes 59 of the plate-by-plate unit 50 is to be processed so that a plurality of rows are arranged in one row.

The interposer connecting pin is inserted into the through via hole 59 of the through plate hole 50 of the plate unit, and contacts the bottom surface of the through opening through-hole conduction wiring 29 embedded in the through opening of the through plate 20. It is energized by an interposer.

The through-via hole 59 of the plate unit current-carrying plate 50 is processed into an inverted triangular cylindrical 43 structure.

Steps a to k of Figure 4 is a flow chart illustrating in detail the embodiment of the current-carrying unit plate conduction plate 20, and the step-by-step current-carrying plate 20 size is one plate unit.

As described in step a, the manufacturing of the plate-by-plate unit 20 is performed by laminating a dry film resist on the selected non-conductive upper surface.

As in step b, a photomask having a through opening pattern is prepared, and exposed and developed with a photomask on the upper surface of the plate unit current-carrying plate 20 to which the dry film resist is attached, thereby patterning the shape and size of the upper half through opening.

As described in step c, the micro-blasting method is performed through the half-opening opening of the upper surface of the plate-by-plate unit 20.

As in step d, the dry film resist remaining on the upper surface of the plate-by-plate unit 20 is removed.

As shown in step e, the slit groove 25 is machined on the left and right half through openings formed on the upper surface of the plate-by-plate unit 20.

As in step f, the upper half through-opening is processed by lamination with a dry film resist on the lower surface of the single plate unit current-carrying plate 20.

A photomask in which a through opening pattern is formed is prepared as in step g, and the bottom half through opening pattern is patterned by exposing and developing the photomask on the bottom surface of the single plate unit conducting plate 20 to which the dry film resist is attached.

As shown in step h, the micro-blasting method is performed on the lower surface of the lower plate of the unit plate through the micro blasting method to match the upper half through opening of the lower half.

As in step i, the dry film resist remaining on the lower surface of the plate-by-plate unit 20 is removed.

As in step j, the metal that becomes the through-opening conduction wiring 29 is buried in the upper half-opening opening of the upper plate and the lower half-opening opening of the unit plate.

As described in step k, the entire through-opening current-carrying plate 20 formed in the plate-by-plate current-carrying plate 20 is cleaned.

The through-open conduction wiring 29 in which the metal is embedded in the through-opening opening of the board unit current-carrying plate 20 and the through-via hole 59 of the board unit current-carrying plate 50 coincide with each other.

Micro Machining Example 3

5 shows that the upper half through hole 33 is formed in the upper conducting plate 30a of the plate unit, and the upper half via hole 33 is formed, and the lower half hole is filled with metal, and the lower half conducting wiring 31 is embedded in the lower half hole. The upper half hole wiring wire 35 is formed by burying a metal in the upper half hole in the plate 30b, and the lower half hole becomes a lower via hole 37 in the lower half hole. 30b) are joined to each other to form a single plate current-carrying plate 30, and the structure of the upper half-carrying wiring 31 enlarged in dirt units will be described.

First, the upper plate through the upper plate (30a) is selected as a non-conductor to process through-holes on the upper and lower surfaces by the microblast processing characteristics, the upper half hole formed by the microblast processing characteristics is roughly inverted triangular cylindrical (43) shape If the half hole is also roughly inverted cylindrical triangle 43 is processed.

The upper half hole becomes the upper half via hole 33 and the lower half hole becomes a half conducting wiring 31 when metal is embedded in the lower half hole.

The upper half via hole 33 of the upper plate-bearing plate 30a is joined to the half-carrying wiring 31 by inserting a pin.

The plate unit current plate 30a has slit grooves formed in the longitudinal side and the transverse side, and the slit grooves of the longitudinal side slit groove 49 have a depth deeper than the depth of the lateral slit groove 47.

The transverse side slit grooves and the longitudinal side slit grooves formed in the plate unit current conducting plate 30a hold the alignment positions of the X-axis and Y-axis positions precisely when they are connected to the half-conducting wiring 31 when the conduction pin is used.

Next, the bottom plate of the current-carrying unit 30b is selected as a non-conductor, and the through hole is processed by the micro blast processing characteristics. The upper half hole formed by the micro blast processing characteristics is processed into a substantially inverted triangular cylindrical shape (43). The half hole is also roughly formed into an inverted cylindrical triangle 43.

Metals are embedded in the half holes on the upper surface of the lower plate-bearing plate 30b to form the upper half conducting wiring 35 and the lower half of the lower plate becomes the half via hole 37.

When the connecting pin of the interposer is inserted into the half via hole 37, the conductive pin head 100 is energized.

The upper plate of the current-carrying unit (30a) is the upper half hole is the upper half via hole 33, the lower half hole is to fill the metal and the lower half conduction wiring 31.

The hole excavation of the plate unit of the single plate unit 30a may be performed like the hole 33a, the hole 33b, the hole 33c, or the hole 33a, the hole 33b, or the hole 33a, the hole 33. As c is to be processed to be excreted in multiple steps.

In the hole excavation of the board unit current-carrying plate 30a, the number of holes and the hole positions are determined according to the test pad pitch of the semiconductor chip.

The baffle unit current-carrying plate 30 is butt-bonded by matching the half-conducting wiring 31 on the lower surface of the upper-conductive plate 30a and the half-conducting wiring 35 on the upper surface of the lower-conductive plate 30b.

Steps a to j of Figure 6 is a flow chart illustrating in detail the manufacturing process of the plate-by-plate current-carrying plate 30a by way of example, the size of the step-by-step current-carrying plate (30a) is a board unit.

As described in step a, the manufacture of the single plate unit upper conducting plate 30a is performed by laminating a dry film resist on the selected non-conductive upper surface.

As in step b, a photomask having a hole pattern is prepared, and exposed and developed with a photomask on an upper surface of the upper conductive plate 30a on which the dry film resist is attached, to pattern an upper half-hole shape and size.

As in step c, the microhole processing is performed on the upper half-hole of the upper conductive plate 30a of the plate unit.

As in step d, the dry film resist remaining on the upper surface of the single plate unit upper conductive plate 30a is removed.

processing the transverse side slit grooves 47 and the dirt unit longitudinal side left and right grooves at the left and right sides of the half through holes formed on the upper plate of the upper plate (30a) as in step e;

As in step f, the upper half-hole of the upper surface is processed by laminating with a dry film resist on the lower surface of the upper conductive plate 30a.

In step g, a photomask having a hole pattern is prepared, and a half hole shape is patterned by exposing and developing the photomask on the lower surface of the upper conductive plate 30a having a dry film resist.

As shown in step h, the bottom surface of the lower plate of the upper plate of the upper plate 30a is subjected to micromachining by the micro blasting method.

As in step i, the dry film resist remaining on the lower surface of the upper plate of the upper plate 30a is removed.

As in step j, the lower conductive plate 30a is embedded in the lower conductive plate 30a in the lower plate.

Subsequently, except for step e of step a and step j, the bottom plate is repeatedly processed, and the stepped plate 30b is one plate unit.

Then, as in step k, the upper half via hole 33 and the lower half conducting wiring 31 formed on the upper half conducting plate 30a and the lower half unit conducting plate 30a are formed on the upper conducting plate 30a. The upper half conducting wiring 35 and the lower half via hole 37 formed therein are cleaned on the front surface of the lower plate unit energizing plate 30b, and the lower plate half conducting wiring 31 and the lower surface of the plate unit upper conducting plate 30a. The lower unit current conduction plate 30b of the upper plate is made to match the conduction wiring surface in which the upper half conducting wiring 35 is embedded, and the upper unit conduction plate 30a of the unit unit and the lower conduction plate 30b of the unit unit are joined to each other.

The manufacturing method of the above-mentioned board unit current board of the present invention is not limited to the above embodiments, and the manufacturing method of the implementation of another current board is the same within the spirit and scope of the present invention.

1 is a perspective view showing an enlarged cross-sectional view showing a state in which the upper half conducting wiring is processed on the plate unit conducting plate 10 of the present invention.

Steps a to j of Figure 2 is a process flow diagram illustrating a manufacturing method of the current-carrying unit plate 10 of the present invention.

Figure 3 is a perspective view showing an enlarged cross-sectional view showing a state in which the through-opening energization wiring is processed in the plate unit current-carrying plate 20 of the present invention.

Steps a to k of Figure 4 is a process flow diagram illustrating a manufacturing method of the current-carrying unit plate of the present invention.

5 is a state in which the upper half via hole and the lower half conducting wiring process of the upper plate of the plate unit of the present invention 30a and the lower half conducting wiring line and the lower half via hole process of the lower plate of the plate unit 30b are bonded to each other. It is a perspective view of a board unit current-carrying plate (30).

Steps a to k of Figure 6 is a process flow diagram illustrating a method of manufacturing a plate-by-plate current carrying plate 30a of the present invention.

<Description of the code | symbol about the principal part of drawing>

10... B. Top half energized wiring 13.. Half Via Hole

20... B. Through opening energized wiring 30. Bout

30a... Upper unit of the board unit 30b... Lower current board

31... Lower conducting wiring 33. Half via hole on top

35... Lower conducting plate, upper half conducting wiring 37.. Half via hole on bottom

41... Slit groove 43.. Inverted triangular cylindrical 45. History angle cylindrical type

47... Transverse slit groove 49.. Longitudinal slit groove 50.. Bout

59... Through-hole via hole 100... Power pin head

Claims (12)

The manufacturing of the current-carrying unit 10 is a step of laminating with a dry film resist on the selected non-conductive upper surface; Preparing a photomask on which a hole pattern is formed and exposing and developing the photomask on the upper surface of the single plate unit current-carrying plate 10 to which the dry film resist is attached to pattern the upper half-hole shape and size; C) performing micro-processing on the upper half hole on the upper surface of the plate-by-plate unit by a micro blasting method; A step d of removing the dry film resist remaining on the upper surface of the plate-bearing plate 10; A step (e) of burying a metal to be the upper half conducting wiring (11) in the upper half hole of the plate unit energizing plate (10); F step of laminating a dry film resist on the lower surface of the plate-bearing unit plate through which the upper half hole is processed; G preparing a photomask having a hole pattern formed thereon and patterning a half hole shape by exposing and developing the photomask on a lower surface of the plate-shaped conducting plate 10 to which the dry film resist is attached; A step h of performing fine processing by the micro blasting method to match the half hole to the upper half hole on the lower surface of the plate-by-electric plate 10; I step of removing the dry film resist remaining on the lower surface of the plate-by-plate unit 10; A step j of cleaning the entire surface of the upper plate half conducting wiring 11 and the lower surface half hole 13 formed on the plate unit conducting plate 10; Method for manufacturing a non-conductive baffle unit current conduction plate comprising a. Manufacturing of the current-carrying unit 20 is a step of laminating with a dry film resist on the selected non-conductive upper surface; Preparing a photomask on which a through opening pattern is formed and exposing and developing the photomask on the upper surface of the single plate unit conducting plate 20 to which the dry film resist is attached to pattern the shape and size of the upper half through opening; C step of performing fine processing on the half through opening of the upper plate through the plate unit; A step d of removing the dry film resist remaining on the upper surface of the plate-by-plate unit 20; E-processing the slit groove 41 on the left and right half through openings formed on the upper surface of the plate unit energizing plate 20; F step of laminating with a dry film resist on the lower surface of the plate unit through which the upper half through opening is processed; G preparing a photomask having a through-opening pattern and exposing and developing the lower half through-opening shape of the lower surface through a photomask on a lower surface of the plate-coating unit through which the dry film resist is attached; A step h of performing micro-processing by the micro blasting method so that the half through openings on the lower surface of the plate unit current conducting plate 20 coincide with the upper half through openings; I step of removing the dry film resist remaining on the lower surface of the plate-by-plate unit; A step (j) of burying a metal to be a through-opening conduction wiring (29) in the upper half-opening opening and the lower half-opening opening of the plate-by-plate unit; A step k for cleaning the entire surface of the plate-bearing plate through which the through-open plate-coating wire 29 formed on the plate-plate plate-opening plate 20 is processed; Method for manufacturing a non-conductor bout unit current conduction plate comprising a. 3. The non-conductor according to claim 2, wherein the half-opening opening shape of the baffle unit current conducting plate 20 is processed into an inverted angle cylindrical shape 45, and the arrangement of the through-opening openings is processed so that a plurality of rows are arranged in one row. Method of manufacturing a current-carrying board. According to claim 2, wherein the through-opening current-carrying plate 29 is embedded in the plate unit current-carrying plate 20 and the through-hole via 59 is matched with the plate unit current-carrying plate 50 is processed to join each other unit plate Method for manufacturing a non-conductive baffle unit energized plate, characterized in that. Manufacturing of the upper unit plate (30a) of the unit unit a step of laminating with a dry film resist on the selected non-conductive upper surface; Preparing a photomask having a hole pattern and exposing and developing the photomask on the upper surface of the upper conductive plate 30a to which the dry film resist is attached, thereby patterning the shape and size of the upper half hole 33; C step of performing fine processing on the upper half plate 33 of the upper conductive plate 30a by the micro blast method; Step d to remove the dry film resist remaining on the upper surface of the plate unit upper conductive plate (30a); An e step of processing the lateral slit grooves 47 and the slit grooves 49 at the left and right sides of the dirt unit longitudinal side; F step of laminating with a dry film resist on the lower surface of the upper plate (a) of the upper plate plate processed by the upper half hole; Preparing a photomask on which a hole pattern is formed, and exposing and developing a lower half hole shape by exposing and developing a photomask on a lower surface of the upper conductive plate 30a having a dry film resist; Step h of performing fine processing by the micro blasting method to match the half hole to the upper half hole on the lower plate of the upper plate of the upper plate (30a); I step of removing the dry film resist remaining on the lower surface of the upper unit plate 30a of the unit; A j step of burying a metal that becomes a half conducting wiring 31 in the lower half of the lower unit of the upper conducting plate 30a; And A step k for cleaning the entire surface of the upper plate of the upper plate plate 30a on which the lower half platen wiring line 31 and the upper surface half hole 37 formed on the plate plate upper plate plate 30a are processed; Method for manufacturing a non-conductor bout unit current conduction plate comprising a. According to claim 5, wherein the longitudinal side and the lateral slit groove formed in the upper plate (30a) of the plate unit slit groove 49 is deeper than the depth of the lateral slit groove 47 depth of the longitudinal slit groove (47) Method for manufacturing a non-conductor baffle current conduction plate, characterized in that formed. According to claim 5, wherein the upper conductive plate 30a with the conductive wiring is embedded and the lower conductive plate (30b) with the conductive wiring is embedded in the unit plate through the matched electrical wiring wiring 30 Method for manufacturing a non-conductor baffle unit current plate, characterized in that the. delete According to claim 1, 2, 5, wherein the plate-shaped conductive plate 10 half hole, the lower hole of the upper plate plate 30a of the plate unit and the through hole opening of the plate plate unit 20 of the plate unit The method of manufacturing a non-conductive single-circuit current-carrying plate, characterized in that the metal to be embedded is selected one of Cu, Au, Ag and embedded. The method according to claim 1, wherein the conduction wiring shape of the half-hole of the baffle unit current conduction plate 10 and the baffle unit upper conduction plate 30a is processed into a plurality of inverted triangular cylinders 43, The method of manufacturing a non-conductor plate through a half hole is characterized in that the number of hole steps and the hole position is determined according to the test pad pitch of the semiconductor chip. According to claim 1, 2, and 5, wherein the metal plate in the through-hole opening of the half-hole and the upper plate of the plate unit (30a) and the through-hole of the plate unit of the plate unit The method of manufacturing a non-conductive single plate unit energizing plate, characterized in that the buried in any one of the process selected from E-beam deposition, sputtering deposition, electroplating, electroless plating. According to claim 1, 2, 5, wherein the size of the plate-by-plate conductive plate (10, 20), the plate unit upper conductive plate (30a) and the plate unit conductive plate 50 is a current-carrying pin head (100) Non-conductor, characterized in that the size can be the size of a single-circuit energizing plate that can inspect the entire wafer to be examined at a time, and the size of the single-circuit energizing plate (10,20,30a, 50) is determined according to the number of inspections Method of manufacturing a current-carrying board.

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