KR100894624B1 - Fabric type semiconductor device package, installing and manufacturing method thereof - Google Patents

Abstract

The present invention relates to a woven semiconductor device package and the like.

Fabric type semiconductor device package according to the present invention is a fabric type printed circuit board including a lead (Lead) formed by patterning the conductive material on the fabric and the fabric, a semiconductor device bonded to the lead portion of the fabric printed circuit board; It includes a molding for sealing the fabric printed circuit board and the semiconductor device.

In the fabric type semiconductor device package according to the present invention, foreign matters can be minimized by using a fabric type printed circuit board formed of fabric. In addition, the fabric type semiconductor device package can be easily installed. In addition, the productivity of the woven semiconductor device package can be improved.

Description

Fabric type semiconductor device package, its installation method and manufacturing method {FABRIC TYPE SEMICONDUCTOR DEVICE PACKAGE, INSTALLING AND MANUFACTURING METHOD THEREOF}

The present invention relates to a fabric type semiconductor device package, a method for manufacturing the same, and a method for installing the same.

Recently, the interest in the wearable computer (Wearable Computer) that integrates a variety of digital devices and functions necessary for everyday life in the clothing is increasing. Currently, the components of a computer are distributed and placed in clothing. However, as miniaturization of portable devices, multifunctionalization, and development of conductive fibers are made, a wearable computer that provides functions of a computer in the form of a garment without a user's knowledge is expected to be realized.

Under these circumstances, conventional semiconductor packaging and printed circuit board manufacturing methods have limitations in miniaturizing portable devices and minimizing foreign object feeling when the portable devices are inserted into clothing. Accordingly, flexible circuit boards for liquid crystal display modules have been developed, but it is still inconvenient to insert them into clothing. In addition, when implementing electrical wiring using a conductive fiber in the fabric or fabric, the end of the conductive fiber and the semiconductor package must be soldered by hand one by one, there is a problem that automation is difficult and productivity is reduced.

SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a fabricated semiconductor device package, an installation method, and a manufacturing method of the fabricated semiconductor device package in which foreign matter in clothing is minimized and productivity may be improved.

Fabric type semiconductor device package according to the present invention fabric and printed circuit board comprising a lead (Lead) formed by patterning a conductive material on the fabric, a semiconductor device and the electrode bonded to the lead portion of the fabric printed circuit board It includes a molding for sealing the printed circuit board and the semiconductor device.

It is preferable that the electrode portion of the semiconductor element and the lead portion of the woven printed circuit board are wire bonded through a wire.

The fabricated printed circuit board further includes a metal plate formed on the lead portion, and the electrode portion of the semiconductor element and the metal plate of the fabricated printed circuit board are wire bonded through a wire.

A separate protrusion is formed on the electrode portion of the semiconductor element or the lead portion of the fabricated printed circuit board, and the electrode portion of the semiconductor element and the lead portion of the fabricated printed circuit board are flip chip bonded through the protrusion.

The semiconductor device preferably includes at least one of a semiconductor chip, a passive device, and an integrated circuit chipset.

Via-holes are formed in the fabricated printed circuit board, and the molding part is formed in the upper and lower portions of the via-hole and the fabricated printed circuit board, and the molding region and the fabricated printing formed on the upper portion of the fabricated printed circuit board. The molding regions formed under the circuit board are preferably connected to each other by the molding regions formed in the via holes.

The installation method of the woven semiconductor device package according to the present invention includes the step of installing the woven semiconductor device package to the garment by stitching the woven printed circuit board to the garment using conductive fibers.

The step of installing the fabric type semiconductor device package includes removing the coating layer of the conductive fiber by using a knife or a laser so that the conductor of the conductive fiber sewn onto the garment is partially exposed, and the lead portion of the exposed conductor and the printed circuit board. It is preferable to include the step of bonding using.

The installation step of the fabric type semiconductor device package may include a step of making the lead part of the fabric type printed circuit board to which the semiconductor element is bonded and the lead pattern of the separate fabric type printed circuit board to be in contact with each other and stitching with conductive or general fiber. desirable.

A method of manufacturing a fabricated semiconductor device package according to the present invention includes the steps of: (a) forming a printed circuit board comprising patterning a conductive material on the fabric to form a lead portion, and (b) an electrode of the semiconductor device. Bonding the portion to the lead portion of the fabricated printed circuit board and (c) forming a molding portion for sealing the fabricated printed circuit board and the semiconductor element.

Forming the lead portion preferably includes disposing a screen mask having a pattern corresponding to the pattern of the lead portion on the fabric and applying a conductive material onto the fabric through the screen mask.

The conductive material preferably includes silver, a polymer, a solvent (Solvent), nylon (Polyester), and cynohexanone.

Forming the lead portion may include generating a plasma by colliding the sputtering gas with the target material in a high vacuum state, and depositing the plasma on the fabricated printed circuit board through a mask having a pattern corresponding to the pattern of the lead portion. desirable.

The semiconductor device preferably includes at least one of semiconductor chips, passive devices, and IC chipsets.

(b) step,

Applying a liquid epoxy on the fabric printed circuit board, placing a semiconductor device on the fabric printed circuit board coated with liquid epoxy, bonding a wire to the electrode, and bonding the electrode to the electrode It is preferable to include bonding the wire to the lead portion.

(b) step,

Bonding a metal plate to the lead portion of the fabricated printed circuit board, bonding the semiconductor element to the metal plate, bonding the wire to the electrode portion of the semiconductor element bonded to the metal plate, and attaching the wire bonded to the electrode portion to the metal plate It is preferable to include the step of bonding.

In step (b),

It is preferable that the lead portion of the fabricated printed circuit board and the electrode portion of the semiconductor element are bonded in a flip chip method.

(c) step,

Forming a plurality of holes in the fabricated printed circuit board bonded to the semiconductor device and forming a plastic molding so that the upper and lower portions of the fabricated printed circuit board are connected to each other through the holes.

In the fabric type semiconductor device package according to the present invention, foreign matters can be minimized by using a fabric type printed circuit board formed of fabric.

In addition, the fabric type semiconductor device package can be easily installed.

In addition, the productivity of the woven semiconductor device package can be improved.

Hereinafter, a fabric type semiconductor device package according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings.

1 to 4 are diagrams showing a fabric type semiconductor device package according to a preferred embodiment of the present invention.

Referring to FIG. 1, a fabricated semiconductor device package 101 according to the present invention includes a fabricated printed circuit board 100 including a lead 110 formed by patterning a fabric and a conductive material on the fabric. The molding unit 300 in which the electrode unit 210 seals the semiconductor device 200 and the fabricated printed circuit board 100 and the semiconductor device 200 bonded to the lead unit 110 of the fabricated printed circuit board 100. ).

The fabricated printed circuit board 100 includes a lead part 110 formed by patterning a conductive material on a fabric. The lead unit 110 may be formed by depositing or applying a conductive material on a fabric using a mask. In the mask according to the embodiment of the present invention, holes may be formed in a shape of a pattern desired by a user. Therefore, the conductive material is sprayed on the surface of the mask, the sprayed conductive material is passed through the hole of the mask is formed in a pattern on the fabric can be provided with a fabric type printed circuit board 100.

The fabricated printed circuit board 100 and the semiconductor device 200 may be wire bonded. As shown in FIG. 1, the lead unit 110 of the fabricated printed circuit board 100 and the electrode unit 210 of the semiconductor device 200 are wire bonded through the wire 220. In addition, a metal plate may be formed on the lead unit 110 of the fabricated printed circuit board 100, and the metal plate and the electrode unit 210 of the semiconductor device may be wire bonded through a wire.

The fabricated printed circuit board 100 and the semiconductor device 200 may be flip chip bonded. As shown in FIG. 2, a separate protrusion 150 is formed on the lead portion 110 of the fabricated printed circuit board 100 or the electrode portion 210 of the semiconductor element 200, and the semiconductor element 200. The electrode unit 210 and the lead unit 110 of the fabricated printed circuit board 100 may be flip chip bonded through the protrusion 150.

The semiconductor device bonded to the woven printed circuit board may include one or more of a semiconductor chip, a passive device, and an integrated circuit chipset. Accordingly, as shown in FIG. 3, a fabricated printed circuit board 100 ′ having a pattern of various lead parts may be used so that a plurality of passive elements or an integrated circuit chipset may be mounted.

The molding part 300 is formed to protect the semiconductor device 200 bonded on the fabricated printed circuit board 100 from an external environment such as electrical, physical and chemical shock, dust, and humidity. As shown in FIG. 4, a via hole 103 may be formed in the fabricated printed circuit board 100 to which the semiconductor device 200 is bonded. The molding part 300 may be formed on and under the fabricated printed circuit board 100 to which the via hole 103 and the semiconductor device 200 are bonded. The molding regions formed on the upper and lower portions of the fabricated printed circuit board 100 may be connected to each other by molding regions formed in the via holes 103 of the fabricated printed circuit board 100. Therefore, the upper and lower portions of the fabricated printed circuit board 100 are connected to one by the molding part 300, so that the fabricated semiconductor device package 101 can withstand the pressure received in the horizontal direction.

Fabric type semiconductor device package according to the present invention can minimize the foreign object by using a fabric type printed circuit board formed of a fabric. In addition, the fabric type semiconductor device package may improve durability against pressure in the horizontal direction through a molding part formed so that the top and bottom portions of the fabric type printed circuit board are connected to one.

Hereinafter, with reference to the accompanying drawings will be described for the installation method of the fabric type semiconductor device package according to a preferred embodiment of the present invention.

5 and 6 are views showing a method of installing a fabric type semiconductor device package according to an embodiment of the present invention.

5 is a view showing a fabric-type semiconductor device package installed in a garment according to a preferred embodiment of the present invention.

Referring to FIG. 5, each of the woven semiconductor device packages 101 and 101 ′ is installed in the garment 500 by stitching the woven printed circuit board onto the garment 500 using the conductive fibers 400.

FIG. 6 is a diagram illustrating a method of electrically connecting the fabric type semiconductor device packages 101 and 101 ′ distributed in the garment 500 as shown in FIG. 5.

6A, first, each of the woven semiconductor device packages 101 and 101 'may be sewn onto a garment or the like through the conductive fiber 400. The coating film of the conductive fiber 400 may be removed using a knife or a laser so that the conductor 401 of the conductive fiber 400 sewn onto the garment is partially exposed. Thereafter, the exposed conductor 401 portion and the lead portion 110 of the woven semiconductor device package 101 may be bonded using the conductive adhesive 403. In addition, the conductive fiber 400 connected to the woven semiconductor device package 101 may be connected to another woven semiconductor device package 101 ′ in the same manner.

6B, each of the fabric type semiconductor device packages 101 and 101 ′ may be electrically connected using a separate fabric printed circuit board 100 ′ having a lead pattern 111 formed thereon. First, the lead portions 110 and 110 'formed in the respective fabric type semiconductor device packages 101 and 101' and the lead patterns 111 formed in the separate fabricated printed circuit board 100 'are brought into contact with each other. Thereafter, the lead patterns 111 and the lead portions 110 and 110 ′ in contact with each other are sewn using the conductive fibers or the normal fibers 405. Accordingly, each of the fabric type semiconductor device packages 101 and 101 'installed in the garment may be electrically connected to each other.

Accordingly, each of the woven semiconductor device packages 101 and 101 ′ shown in FIG. 5 may be installed in the garment 500 as well as electrically connected using the conductive fibers 400.

The installation method of the fabric type semiconductor device package according to the preferred embodiment of the present invention has the effect of easily installing the fabric type semiconductor device package on the garment by using stitching.

Hereinafter, a method of manufacturing a fabric type semiconductor device package according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings.

7 to 12 are views showing a method of manufacturing a fabric type semiconductor device package according to an embodiment of the present invention.

7 to 12, a method of manufacturing a fabricated semiconductor device package according to the present invention includes fabricating a printed circuit board 100 including forming a lead unit 110 by patterning a conductive material on a fabric. Forming step, bonding the electrode portion 210 of the semiconductor device 200 and the lead portion 110 of the fabricated printed circuit board 100 and sealing the fabricated printed circuit board 100 and the semiconductor device 200 Forming the molding part 300.

<Step of Forming Fabric Printed Circuit Board>

7 is a view showing a method of forming a woven printed circuit board 100 according to an embodiment of the present invention.

Referring to FIG. 7, the forming of the fabricated printed circuit board 100 may include forming the lead unit 110 by patterning a conductive material on the fabric.

In the method of forming the lead portion 110 of the fabricated printed circuit board 100, first, a screen mask having a pattern corresponding to the pattern of the lead portion 110 is disposed on the fabric. Thereafter, a conductive material is applied to the screen mask surface disposed on the fabric. At this time, the conductive material is deposited on the fabric through the pattern of the screen mask. The conductive material deposited on the fabric is formed of the lead portion 110 having a predetermined pattern. Accordingly, the fabricated printed circuit board 100 having the lead unit 110 may be formed. The conductive material used to form the lead portion 110 of the fabricated printed circuit board 100 may include silver, a polymer, a solvent, a solvent, a nylon, and a cyclohexanone. .

Another method of forming the lead portion 110 of the fabricated printed circuit board 100, first, to generate a plasma by colliding the sputtering gas with the target material in a high vacuum state. Thereafter, the plasma is sprayed onto the fabric through a mask having a pattern corresponding to the pattern of the lead portion 110. Accordingly, the lead portion 110 having a predetermined pattern is formed on the fabric, thereby providing a fabricated printed circuit board 100. Here, the lead part 110 formed on the fabricated printed circuit board 100 may be formed of a conductive material.

8 is a view showing various passive devices that may be implemented as a woven printed circuit board. The fabricated printed circuit board to which the semiconductor device to be described below will be bonded includes pads for 16 pins 13, pads 15 and 17 for 12 pins, wires 21, inductors 23 and 25, capacitors 27, 29 and 31, and The resistor 33 may be implemented.

Bonding Semiconductor Devices and Fabricated Printed Circuit Boards

9 to 11 illustrate a bonding method of a semiconductor device and a fabricated printed circuit board according to an exemplary embodiment of the present invention.

9 and 10, the semiconductor device 200 and the fabricated printed circuit board 100 may include the electrode portion 210 of the semiconductor device 200 and the lead portion 110 of the fabricated printed circuit board 100. Is bonded by a wire bonding method bonded through the wire 220. The semiconductor device bonded to the fabricated printed circuit board 100 may include one or more of a semiconductor chip, a passive device, and an integrated circuit chipset.

When the semiconductor device 200 is bonded to the fabricated printed circuit board 100, the bonding operation may not be easily performed due to the flexibility of the fabricated printed circuit board 100. In order to solve this problem, first, a liquid epoxy may be applied to an area of the fabricated printed circuit board 100 to which the semiconductor device 200 is to be bonded. Thereafter, as shown in FIG. 9, the semiconductor device 200 is fixed on the fabric type printed circuit board 100 coated with liquid epoxy.

Thereafter, as shown in FIG. 10-a, one end of the wire 220 is first bonded to the electrode portion 210 of the semiconductor device 200. Thereafter, the other end of the wire 220 bonded to the electrode unit 210 is secondarily bonded to the lead unit 110 of the fabricated printed circuit board 100. Here, after the first bonding and the second bonding using the electrodes included in the electrode unit 210 and the leads included in the lead unit 110 as a unit, another electrode and the lead may be primary bonded and secondary bonded. Can be. Accordingly, as shown in FIG. 10-b, the semiconductor device 200 may be wire bonded to the wire on the fabricated printed circuit board 100.

In addition, during wire bonding of the semiconductor device and the fabricated printed circuit board 100, first, a metal plate may be adhered onto the lead portion 110 of the fabricated printed circuit board 100. Thereafter, the semiconductor device may be adhered to the metal plate adhered on the lead unit 110. Subsequently, the electrode 210 of the semiconductor device 200 and the metal plate on the fabricated printed circuit board 100 may be bonded through primary bonding and secondary bonding in the same manner as the wire bonding method described above.

Referring to FIG. 11, the electrode unit 210 of the semiconductor device 200 and the lead unit 110 of the fabricated printed circuit board 100 may be bonded by a flip chip method.

As shown in FIG. 11, the flip chip method uses a separate protrusion 150 formed on the lead portion 110 of the fabricated printed circuit board 100 or the electrode portion 210 of the semiconductor device 200. The device 200 and the fabric printed circuit board 100 are electrically connected to each other.

<Step of forming molding part>

12 is a view showing a method of forming a molding part of a woven semiconductor device package according to an exemplary embodiment of the present invention.

Referring to FIG. 12-a, a plurality of holes 103 are formed in the fabricated printed circuit board 100 to which the semiconductor device 200 is bonded. Thereafter, as shown in Fig. 12-B, a liquid molding compound and the like are deposited. Accordingly, the liquid molding compound is permeated through the holes 103 of the fabricated printed circuit board 100 to which the semiconductor device 200 is bonded. Accordingly, the molding part 300 may be formed so that the upper and lower portions of the fabricated printed circuit board 100 are connected to each other. That is, each of the molding regions formed on the upper and lower portions of the fabricated printed circuit board 100 may be connected to one by the molding region formed in the hole. Since the molding part 300 is formed so that the upper part and the lower part are connected to each other, the fabric type semiconductor device package 101 may better withstand the pressure in the horizontal direction.

As described above, those skilled in the art will understand that the present invention can be implemented in other specific forms without changing the technical spirit or essential features. Therefore, the embodiments described above are to be understood in all respects as illustrative and not restrictive, and the scope of the present invention is indicated by the following claims rather than the above description, and the meaning and scope of the claims And all changes or modifications derived from the equivalent concept should be interpreted as being included in the scope of the present invention.

1 to 4 are diagrams showing a woven semiconductor device package according to an embodiment of the present invention.

5 and 6 are views showing a method of installing a fabric type semiconductor device package according to an embodiment of the present invention.

7 to 12 are views showing a method of manufacturing a fabric type semiconductor device package according to an embodiment of the present invention.

******** Explanation of symbols for the main parts of the drawing ********

100: fabric printed circuit board

110: lead portion

200: semiconductor device

210: electrode portion

220: wire

300: molding part

Claims (18)

A printed circuit board including a fabric and a lead formed by patterning a conductive material on the fabric; A semiconductor device having an electrode portion bonded to a lead portion of the fabric type printed circuit board; And Fabric type semiconductor device package comprising a molding unit for sealing the fabric-type printed circuit board and the semiconductor device. The method of claim 1, The electrode unit of the semiconductor device and the lead portion of the fabricated printed circuit board, wire-bonded through a wire, a fabric type semiconductor device package. The method of claim 1, The fabric printed circuit board further includes a metal plate formed on the lead portion, The electrode part of the semiconductor device and the metal plate of the fabricated printed circuit board is wire-bonded through a wire, the fabric-type semiconductor device package. The method of claim 1, A separate protrusion is formed on the electrode portion of the semiconductor element or the lead portion of the fabricated printed circuit board, and the electrode portion of the semiconductor element and the lead portion of the fabricated printed circuit board are flip chip bonded through the protrusion. Semiconductor device package. The method of claim 1, The semiconductor device package includes a semiconductor chip, a passive device and an integrated circuit chipset (IC Chipset). The method of claim 1, Via-holes are formed in the fabric type printed circuit board, The molding part is formed above and below the via hole and the fabricated printed circuit board. And a molding region formed on an upper portion of the fabricated printed circuit board and a molding region formed on a lower portion of the fabricated printed circuit board are connected to each other by a molding region formed in the via hole. The fabric type semiconductor device package according to any one of claims 1 to 6, wherein the fabric type semiconductor device package is installed on the garment by stitching the fabric printed circuit board to the garment using conductive fibers. The method of claim 7, wherein The installation step of the fabric type semiconductor device package, Removing the coating film of the conductive fiber by using a knife or a laser to partially expose the conductor of the conductive fiber sewn onto the garment; And Bonding the exposed conductor and the lead portion of the fabricated printed circuit board using a conductive adhesive; Including, fabric type semiconductor device package installation method. The method of claim 7, wherein The installation step of the fabric type semiconductor device package, Installation of the fabric type semiconductor device package, comprising the step of contacting the lead portion of the printed circuit board bonded to the semiconductor device and the lead pattern of the separate fabricated printed circuit board to each other and stitched with the conductive fiber or normal fiber. Way. (a) forming a printed circuit board comprising patterning a conductive material on the fabric to form a lead portion; (b) bonding an electrode part of the semiconductor device to a lead part of the fabricated printed circuit board; And (c) forming a molding part for sealing the fabric type printed circuit board and the semiconductor element. The method of claim 10, Forming the lead portion, Disposing a screen mask having a pattern corresponding to the pattern of the lead portion on the fabric; And Applying the conductive material onto the fabric through the screen mask; A manufacturing method of a woven semiconductor device package comprising a. The method of claim 11, The conductive material includes silver, a polymer, a solvent, a solvent, a nylon, a polyester, and a cycloneone. The method of claim 10, Forming the lead portion, Generating a plasma by colliding the sputtering gas with the target material in a high vacuum state; And Depositing the plasma on the fabricated printed circuit board through a mask having a pattern corresponding to the pattern of the lead portion; A manufacturing method of a woven semiconductor device package comprising a. The method of claim 10, The semiconductor device comprises at least one of a semiconductor chip, a passive device and an integrated circuit chipset (IC Chipset), manufacturing method of the fabric type semiconductor device package. The method of claim 10, In step (b), Applying liquid epoxy on the fabric printed circuit board; Bonding the wire to the electrode part after placing the semiconductor device on the fabric type printed circuit board coated with the liquid epoxy; And Bonding the wire bonded to the electrode to the lead; A manufacturing method of a woven semiconductor device package comprising a. The method of claim 10, In step (b), Adhering a metal plate on a lead portion of the fabricated printed circuit board, and adhering the semiconductor element on the metal plate; Bonding a wire to an electrode portion of the semiconductor element bonded to the metal plate; And Bonding the wire bonded to the electrode to the metal plate; A manufacturing method of a woven semiconductor device package comprising a. The method of claim 10, In step (b), The lead portion of the fabric-type printed circuit board and the electrode portion of the semiconductor device is bonded by a flip chip method (Flip Chip) method of manufacturing a semiconductor device package. The method of claim 10, In step (c), Forming a plurality of holes in the fabricated printed circuit board to which the semiconductor device is bonded; And Forming the plastic molding part such that upper and lower portions of the fabricated printed circuit board are connected to each other through the holes; A manufacturing method of a woven semiconductor device package comprising a.

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