KR100884519B1 - 유기 el 패널의 제조 방법, 유기 el 표시 장치의 제조방법 - Google Patents
유기 el 패널의 제조 방법, 유기 el 표시 장치의 제조방법 Download PDFInfo
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- KR100884519B1 KR100884519B1 KR1020077011520A KR20077011520A KR100884519B1 KR 100884519 B1 KR100884519 B1 KR 100884519B1 KR 1020077011520 A KR1020077011520 A KR 1020077011520A KR 20077011520 A KR20077011520 A KR 20077011520A KR 100884519 B1 KR100884519 B1 KR 100884519B1
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- 238000000034 method Methods 0.000 title claims abstract description 12
- 239000010408 film Substances 0.000 claims abstract description 110
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 49
- 230000001681 protective effect Effects 0.000 claims abstract description 49
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims abstract description 29
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 claims abstract description 15
- 239000010409 thin film Substances 0.000 claims abstract description 14
- 238000005401 electroluminescence Methods 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims description 78
- 238000007789 sealing Methods 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 25
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 8
- 229910001882 dioxygen Inorganic materials 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 150000003377 silicon compounds Chemical class 0.000 claims 1
- 230000002463 transducing effect Effects 0.000 claims 1
- 239000011347 resin Substances 0.000 description 19
- 229920005989 resin Polymers 0.000 description 19
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 7
- 239000002994 raw material Substances 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (6)
- 지지 기판과,상기 지지 기판 상에 배치된 발광부와,상기 발광부 상에 배치된 전기 절연성의 제 1 보호막을 갖고, 밀봉 패널과 부착되어 유기 EL 표시 장치를 구성하는 유기 EL 패널의 제조 방법으로서,상기 제 1 보호막을 형성하기 전의 상기 유기 EL 패널을 막형성 장치 내로 반입하고,상기 막형성 장치 내에 적어도 실리콘 원자를 함유하는 제 1 원료 가스를 도입하고, 실리콘 화합물로 이루어지는 제 1 보호막을 형성하는 공정과,상기 유기 EL 패널을 상기 제 1 보호막이 노출된 상태에서 진공 분위기에 두고,상기 진공 분위기 중에 트리메틸알루미늄을 도입하고,이어서, 오존을 도입하여 상기 제 1 보호막의 표면에 알루미나 박막으로 이루어지는 제 2 보호막을 형성하는 공정을 포함하는, 유기 EL 패널의 제조 방법.
- 제 1 항에 있어서,상기 진공 분위기 중에, 상기 트리메틸알루미늄과 상기 오존을 교대로 도입하는, 유기 EL 패널의 제조 방법.
- 제 2 항에 있어서,상기 트리메틸알루미늄이 도입된 후, 상기 오존을 도입하기 전에, 상기 진공 분위기로의 상기 트리메틸알루미늄의 도입을 정지하고, 상기 진공 분위기를 진공 배기하여 잔류하는 상기 트리메틸알루미늄을 진공 배기하는, 유기 EL 패널의 제조 방법.
- 제 2 항에 있어서,상기 오존의 도입 후, 상기 트리메틸알루미늄을 도입하기 전에, 상기 진공 분위기로의 상기 오존의 도입을 정지하고, 상기 진공 분위기를 진공 배기하여 잔류하는 상기 오존을 진공 배기하는, 유기 EL 패널의 제조 방법.
- 제 2 항에 있어서,상기 제 1 보호막을 형성하기 전의 상기 유기 EL 패널을 막형성 장치 내로 반입하고,상기 막형성 장치 내에 실리콘 원자를 함유하는 제 1 원료 가스와, 질소 원자를 함유하는 제 2 원료 가스와, 산소 가스를 도입하고, SiON 막으로 이루어지는 제 1 보호막을 형성하는, 유기 EL 패널의 제조 방법.
- 제 1 항에 기재된 유기 EL 패널에, 밀봉 패널을 중첩시켜 유기 EL 표시 장치를 제조하는, 유기 EL 표시 장치의 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JPJP-P-2005-00175492 | 2005-06-15 | ||
JP2005175492 | 2005-06-15 |
Publications (2)
Publication Number | Publication Date |
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KR20070085419A KR20070085419A (ko) | 2007-08-27 |
KR100884519B1 true KR100884519B1 (ko) | 2009-02-18 |
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KR1020077011520A KR100884519B1 (ko) | 2005-06-15 | 2006-06-07 | 유기 el 패널의 제조 방법, 유기 el 표시 장치의 제조방법 |
Country Status (5)
Country | Link |
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JP (1) | JP4891236B2 (ko) |
KR (1) | KR100884519B1 (ko) |
CN (1) | CN101069300A (ko) |
TW (1) | TW200711201A (ko) |
WO (1) | WO2006134812A1 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5208591B2 (ja) * | 2007-06-28 | 2013-06-12 | 株式会社半導体エネルギー研究所 | 発光装置、及び照明装置 |
TWI438953B (zh) * | 2008-01-30 | 2014-05-21 | Osram Opto Semiconductors Gmbh | 電子組件之製造方法及電子組件 |
FR2933538B1 (fr) * | 2008-07-07 | 2012-09-21 | Commissariat Energie Atomique | Dispositif electroluminescent d'affichage, d'eclairage ou de signalisation, et son procede de fabrication |
WO2012029765A1 (ja) | 2010-09-03 | 2012-03-08 | 株式会社アルバック | 保護膜形成方法、表面平坦化方法 |
CN107285781A (zh) * | 2017-06-30 | 2017-10-24 | 长兴泓矿炉料有限公司 | 一种抗水化镁钙质耐火材料及其制备方法 |
CN114420816B (zh) * | 2021-12-09 | 2023-07-21 | 苏州工业园区雨竹半导体有限公司 | 一种发光二极管芯片及其制备工艺 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002033186A (ja) * | 2000-07-17 | 2002-01-31 | Stanley Electric Co Ltd | 有機発光素子 |
JP2003347042A (ja) * | 2002-05-24 | 2003-12-05 | Denso Corp | 有機電子デバイス用の封止膜およびその製造方法 |
WO2004030115A1 (en) | 2002-09-30 | 2004-04-08 | Microemissive Displays Limited | Passivation layer |
Family Cites Families (2)
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JP2003217829A (ja) * | 2002-01-22 | 2003-07-31 | Toyota Industries Corp | 有機elディスプレイパネル |
US6888172B2 (en) * | 2003-04-11 | 2005-05-03 | Eastman Kodak Company | Apparatus and method for encapsulating an OLED formed on a flexible substrate |
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2006
- 2006-06-07 KR KR1020077011520A patent/KR100884519B1/ko active IP Right Grant
- 2006-06-07 WO PCT/JP2006/311427 patent/WO2006134812A1/ja active Application Filing
- 2006-06-07 CN CNA2006800013306A patent/CN101069300A/zh active Pending
- 2006-06-07 JP JP2007521254A patent/JP4891236B2/ja active Active
- 2006-06-14 TW TW095121262A patent/TW200711201A/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002033186A (ja) * | 2000-07-17 | 2002-01-31 | Stanley Electric Co Ltd | 有機発光素子 |
JP2003347042A (ja) * | 2002-05-24 | 2003-12-05 | Denso Corp | 有機電子デバイス用の封止膜およびその製造方法 |
WO2004030115A1 (en) | 2002-09-30 | 2004-04-08 | Microemissive Displays Limited | Passivation layer |
Also Published As
Publication number | Publication date |
---|---|
WO2006134812A1 (ja) | 2006-12-21 |
TW200711201A (en) | 2007-03-16 |
JP4891236B2 (ja) | 2012-03-07 |
CN101069300A (zh) | 2007-11-07 |
JPWO2006134812A1 (ja) | 2009-01-08 |
KR20070085419A (ko) | 2007-08-27 |
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