KR100848549B1 - Method of manufacturing silicon single crystal - Google Patents

Abstract

The present invention relates to a method of growing a silicon single crystal. The silicon single crystal growth method according to the present invention is a silicon single crystal growth method comprising a necking formation step, wherein the silicon single crystal is grown from seed crystals until the necking formation step is at least 1.5 times the diameter of the final necking diameter. Making a step; And reducing the diameter of the silicon single crystal to grow thinly to a constant final necking diameter of 3 to 5 mm to remove slip dislocations. According to the present invention, it is possible to grow a silicon single crystal by removing the slip dislocation within a short necking length without extremely reducing the necking diameter to 2 mm or forming a large number of irregularities after a predetermined diameter to remove the slip dislocation.

Silicon Single Crystal, <110> Crystal Orientation, Necking, Slip Dislocation

Description

Method of manufacturing silicon single crystal

1 shows the shape of seed crystals used for silicon single crystal growth by the Czochralski method.

2 is a view for explaining a dash necking method.

3 illustrates a growth apparatus that can be used for growing silicon single crystals in accordance with the present invention.

4 is a flow chart of a silicon single crystal growth method according to the present invention.

5 is a shape of slip dislocations observed with an optical microscope after a light etching process.

Figure 6 shows the necking diameter according to the necking length in the present invention and a comparative example.

Figure 7 measures the length of the slip dislocation actually disappears in the necking in the present invention and the comparative example.

<Explanation of symbols for the main parts of the drawings>

1 ... seed crystal 2 ... necked 3 ... shoulder

4 ... trunk 5 ... melt 6 ... melt surface

7 ... heater 8 ... upper insulation 9 ... side insulation

10 ... bottom insulation 11 ... quartz crucible 12 ... graphite crucible

13 Lower drive 14 Diameter sensor 15 Growth device

16 ... growth furnace 17 ... impression furnace 18 ... upper turn

19 ... Cable 20 ... Crystal Holder 21 ... Graphite Crucible Support Shaft

22 Lower part 23 Inert gas inlet regulator

24 ... pressure regulator

The present invention relates to a method of growing a silicon single crystal by the method of crystal growth from the melt, and more particularly, to a method of growing a silicon single crystal by the Czochralski (CZ) method. will be.

As the large diameter of the silicon wafer for semiconductor device manufacture progresses, most of the silicon wafer is produced by processing the silicon single crystal grown by the CZ method in the form of a wafer. In general, in the growth of silicon single crystal using the CZ method, when the seed crystal 1 having the shape shown in FIG. 1 is brought into contact with a silicon melt heated to 1420 ° C. or higher, which is a melting point, and the seed crystal temperature becomes stable, By gradually pulling the seed crystals upwardly from the melt, silicon single crystals are grown under the seed crystals.

At this time, since the thermal shock is caused when the seed crystal is brought into contact with the high temperature silicon melt, countless slip dislocations are generated in the seed crystal. For the purpose of removing such slip dislocations, as shown in FIG. 2, a cross-sectional reduction portion, so-called necking, which gradually narrows the diameter of the silicon single crystal grown below the seed crystal to about 3 to 5 mm smaller than the seed crystal diameter. (2). Then, when the slip dislocation is removable from the silicon single crystal, the crystal diameter is enlarged to the desired diameter. The part whose diameter is expanded compared with the necking 2 is called the shoulder 3. Then, while maintaining a constant diameter, the silicon single crystal having a substantially cylindrical body 4 is pulled up. The method for removing slip dislocations by narrowing the diameter of the crystal in this manner is called a dash necking method and is widely used in the growth of silicon single crystals using the CZ method.

On the other hand, in the present production of silicon single crystal, in order to increase the productivity of the silicon single crystal, a production form in which the trunk portion having a constant diameter is made as long as possible in the silicon single crystal is adopted. In order to increase the size of the semiconductor element and to improve the error rate, a silicon wafer having a large diameter is required. Therefore, a larger diameter and a higher weight of the silicon single crystal to be pulled out are in progress.

Also, conventionally, due to physical characteristics, crystal growth, or superiority in the process of manufacturing a semiconductor device, many silicon wafers having a plane orientation of (100) or (111) on the main surface of the wafer forming the semiconductor device are often used. Has been used. In recent years, since the movement of carriers when forming a semiconductor element largely depends on the crystal orientation, attention has been paid to the silicon wafer of the surface orientation 110 capable of increasing the switching speed in order to speed up the semiconductor element.

In order to obtain the silicon wafer of the surface orientation 110, a cylindrical silicon single crystal having a crystal orientation of <100> or <111> is processed by cutting inclined so that the (110) plane becomes the wafer main surface, or crystallized from the beginning. There is a method of growing a silicon single crystal having an orientation of <110> and processing it into a silicon wafer.

However, in the method of manufacturing a silicon wafer whose main surface orientation is (110) from a silicon single crystal having a crystal orientation of <100> or <111>, the portion where the silicon single crystal is cut out to obtain a circular silicon wafer is greatly lost. In addition, since the time required for processing also becomes long, it is not an efficient method for mass producing silicon wafers industrially.

On the other hand, in the method of manufacturing a silicon wafer whose main surface orientation is (110) from the silicon single crystal whose crystal orientation is <110> from the beginning, the silicon single crystal is sliced perpendicularly to the pulling axis direction and the mirror polishing is performed. In this way, a silicon wafer having the (110) plane as the main surface can be obtained. According to this method, in the processing step after the silicon single crystal is pulled up, the same processing as that of the wafer having the surface orientation of (100) or (111) can be performed, so that the processing time for shape adjustment is required to obtain a circular silicon wafer. It can be suppressed to the minimum and efficient wafer processing can be performed. In this method, however, it is a problem to grow a silicon single crystal whose crystal orientation is <110>.

In crystals in which the crystal orientation is <100> or <111>, since the slip dislocations caused by the seed crystal due to thermal shock are introduced at an angle of about 50 to 70 ° with respect to the crystal growth interface, the slip dislocations are removed by the dash necking method. It is possible to do However, in a crystal having a crystal orientation of <110>, since the slip dislocation enters near the perpendicular direction to the crystal growth interface, it is difficult to simply remove the slip dislocation. For this reason, as disclosed in Japanese Patent Application Laid-Open No. 9-165298 and the like, the method of extremely narrowing the necking diameter to less than 2 mm, or the operation of increasing the diameter after thinning the necking diameter to about 3 to 5 mm is repeated to the necking. Special methods such as making a large number of irregularities are used. In addition, a method of growing the silicon single crystal without using the dash necking method by processing the seed crystal tip into a pointed shape has also been proposed.

However, the method of thinning the necking diameter to extremely less than 2 mm is difficult to reproduce in the process, and the tensile strength required to withstand the load of the silicon single crystal grown below the necking becomes poor. Making a large number of irregularities in the necking also appears to be less reproducible and unstable in the process. Finally, the growth of silicon single crystal without necking has the advantage of improving the productivity by enhancing the tensile strength, but the seed crystal processing is somewhat complicated, and once the tip portion is melted to a certain portion, the single crystal is grown down. If single crystal growth does not occur, it proceeds by melting to the bottom of the seed crystal. At this time, the slip potential is already introduced to the seed crystal tip and there is a difficulty in the process of replacing the new seed crystal. In addition, melting the tip of the seed crystal tip to a certain length and then growing the silicon single crystal under it is not a simple problem in terms of temperature control.

As a result of the investigation of the slip dislocation according to the necking diameter in the existing <100> or <111> crystal orientation studies, the necking diameter and the propagation length of the slip dislocation that can support the load of silicon single crystal are proportional to each other. There is a generalization that there is a relationship. In general, the shorter the length of the necking, the more the body portion of the silicon single crystal can be produced. Therefore, a diameter short enough to withstand the load of the silicon single crystal is preferable. As described above, much research has been made on the point where the slip dislocation disappears in the growth of silicon single crystal silicon in the <100> or <111> crystal orientation, but the slip dislocation propagation limit for growing the silicon single crystal in the <110> crystal orientation There is little research on spots and their observations.

The technical problem to be achieved by the present invention is to provide an effective silicon single crystal growth method.

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The silicon single crystal growth method according to the present invention for achieving the above technical problem, in the silicon single crystal growth method comprising a necking (necking) forming step, until the necking forming step is a diameter 1.5 times or more of the final necking diameter Growing the silicon single crystal from the seed crystal and reducing the diameter of the silicon single crystal to grow thinly to a constant final necking diameter of 3 to 5 mm to remove slip dislocations.

Preferably, the slip dislocation is removed by the necking forming step from 180 mm to 220 mm from the bottom of the seed crystal.

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Hereinafter, exemplary embodiments and experimental examples of the present invention will be described with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms, only this embodiment is to complete the disclosure of the present invention, those skilled in the art to which the present invention belongs It is provided to fully inform the scope of the invention, and the invention is defined only by the scope of the claims.

(Example)

Preferably, a single crystal in the <110> crystal orientation is used to grow a silicon single crystal in the <110> crystal orientation.

At this time, seed crystals such as those shown in FIG. 1 can be used. The seed crystal 1 having a square pillar shape shown in FIG. 1 is etched after processing. Etching can remove fine scratches present on the surface by processing, reducing the areas where stress can be concentrated. Through this, stress is concentrated on the seed crystal by thermal shock received when the seed crystal lands on the silicon melt surface, thereby preventing cracking in the seed crystal itself.

Further, in the growth of silicon single crystals, silicon single crystals are grown using seed crystals having the same crystal orientation as the silicon single crystals to be grown in order to make the desired crystal orientation of the grown silicon single crystals. Therefore, in order to grow a silicon single crystal having a crystal orientation of <110>, a seed crystal having a crystal orientation of <110> in the pulling axis direction is used as the seed crystal 1.

On the other hand, the growth of the silicon single crystal according to the present invention can use a growth apparatus as shown in FIG.

The growth device 15 is configured in such a manner that the silicon melt 5 in the growth furnace 16 in which the silicon single crystal is grown is pulled up into the pulling furnace 17. Above the upper impression furnace 17 is a seed crystal holder 20 at the tip of the cable 19 connected to the upper rotary part 18 for rotating the seed crystal 1 when growing the silicon single crystal. The impression passage 17 is also provided with a diameter detecting sensor 14.

Inside the growth furnace 16 is a quartz crucible 11 containing a silicon melt 5, around which a graphite crucible for supporting a quartz crucible 11, which can be changed in shape by a high temperature silicon melt 5. It consists of 12. In the lower part, there is a lower driving part 13 and a lower rotating part 22 for raising and lowering and rotating the graphite crucible support shaft 21 supporting the graphite crucible 12, around which the silicon is melted and heated during the process. The heater 7 for supplying the heat is provided. The upper heat insulating material 8, the side heat insulating material 9, and the lower heat insulating material 10 are configured on the outside of the heater 7 to insulate the growth furnace 16.

In addition, inert to control the flow rate of the inert gas to the impression furnace 17 to flow an inert gas such as argon (Ar) for the purpose of preventing oxidation of the structure in the growth furnace 16 from high temperature to room temperature. There is a gas inflow regulator 23, and a pressure regulator 24 for regulating the pressure in the growth furnace 16 is configured under the lower insulation 10.

The silicon single crystal growth method using the growth apparatus 15 will be described below with reference to the flowchart of FIG. 4.

First, polycrystalline silicon, which is a raw material, is placed in a quartz crucible 11, and then the heater 7 is heated to melt polycrystalline silicon to form a silicon melt 5. When the polycrystalline silicon is melted into the silicon melt 5, the silicon melt is lowered to a temperature at which silicon single crystal growth is possible and temperature stabilization is performed for a predetermined time (step s1).

In order to maintain the melt, the silicon 7 receives continuous thermal energy by the heater 7 surrounding it, which causes the silicon melt 5 to have a tropical flow and constantly change the temperature delicately. If the temperature change caused by the tropical flow is too large, even when the seed crystal is heated and liquidized in accordance with the temperature of the silicon melt, thermal shock is applied to the tip of the seed crystal to cause slip dislocation. Also, even when the tip portion of the seed crystal is immersed in the silicon melt, if the silicon melt temperature near the seed crystal changes significantly during the immersion of the tip portion, thermal deformation occurs in the seed crystal due to the temperature difference between the seed crystal and the melt temperature, and the slip potential is increased. After entering the seed crystal, it becomes difficult to grow the silicon single crystal at no potential thereafter. In particular, when the slip dislocation becomes difficult once the dislocation becomes difficult, such as a silicon single crystal in the <110> crystal orientation, thermal deformation of the seed crystal occurs due to the temperature difference between the seed crystal and the melt temperature, and thus the slip dislocation easily enters the seed crystal. In the end, it causes a decrease in silicon single crystal growth potential. For this reason, this temperature stabilization is an important pre-step process for removing slip dislocations from the necking.

After the seed crystal 1 is coupled to the seed crystal holder 20, the cable 19 connected to the upper rotary part 18 is lowered to preheat the seed crystal 1 from the melt surface 6 for a predetermined time. Thereby minimizing thermal shock due to a difference from the melt temperature (step s2).

Then, immerse the melt surface 6 downward by a predetermined length of the tip of the seed crystal 1 (step s3), and at the time when the temperature reaches the melt temperature, the seed crystal 1 is opposite to the quartz crucible 11 direction of rotation. The necking for removing slip dislocations is formed by rotating at a predetermined speed while rotating at a predetermined speed (step s4).

In the necking forming step, the pulling speed of the seed crystal 1 is adjusted to finally form the necking 2 having a diameter of 3 to 5 mm to remove slip dislocations. In the present invention, the diameter of the necking is 1.5 times or more than the final necking diameter. The silicon single crystals are grown first until they are thinned to a constant final necking diameter of 3-5 mm. By this operation, slip dislocations can be removed more quickly than the conventional dash necking method of gradually decreasing the necking diameter.

On the other hand, large growth of the diameter of the silicon single crystal before thin growth to a final necking diameter of 3 to 5 mm is almost the same as the effect of shortening the necking length from which slip dislocations are removed as long as the diameter is 1.5 times or more the final necking diameter. The upper limit for the diameter of this large area is not determined separately.

After growing the silicon single crystal until the diameter reaches 1.5 times or more of the final necking diameter, in order to grow thinly to the final necking diameter of 3 to 5 mm, the pulling speed of the seed crystal 1 is kept slow and then rapidly changed. can do. At this time, if the pulling is performed at a higher speed than necessary, the diameter of the crystal grown below the seed crystal 1 becomes too thin than the desired diameter, or in some cases, the crystal falls into the silicon melt 5, Make the appropriate adjustments.

According to the present invention, the point at which the slip dislocation is removed by the necking forming step is preferably at least 180 mm and at most 220 mm from the bottom of the seed crystal 1. The removal of slip dislocations is not perfect at necking lengths shorter than 180 mm, and necking lengths longer than 220 mm can be impeded by lengthening the length of the monolithic body.

As described above, according to the silicon growth method of the present invention, the necking process time is reduced, and the single crystal body portion can be further produced by the shortened necking length.

When the necking forming step is completed, the horizontal growth to a constant diameter is formed to form the shoulder (3) and then vertically grown to a uniform diameter to make the body (4) in the actual crystal orientation to grow the dislocation-free silicon single crystal (Step s5).

When the amount of the silicon melt 5 is insufficient to grow the body 4, the diameter is reduced again to form a pointed silicon single crystal to make the contact surface with the melt surface 6 small to minimize the thermal shock generated during separation. After the cooling step, the growth device 15 is removed out of the silicon single crystal growth.

Then, the silicon single crystal with crystal orientation <110> grown by the growth method described above was sliced by cylindrical grinding by a manufacturing process such as crystal with crystal orientation <100> or <111>, followed by mirror polishing. In this case, it is possible to industrially produce a silicon wafer having a plane orientation of (110) on the main surface of the wafer, which is a main material when fabricating a semiconductor element. Silicon single crystals grown by the growth method according to the present invention can be used to produce wafers with one or both polished surfaces, wafers with epitaxial coating, wafers with heat treatment, and wafers coated with other methods. Meanwhile, the present embodiment has been described with an example of growing a silicon single crystal having a crystal orientation of <110> using a seed crystal having a crystal orientation of <110>. However, the crystal orientation of the silicon single crystal and seed crystals for growth thereof is changed as necessary. Can be applied.

According to the present invention, it is possible to grow a silicon single crystal without extremely reducing the necking diameter to 2mm or to form a large number of irregularities after a certain diameter to maintain a constant tensile strength. Therefore, the load change influenced by the change of the diameter can be reduced, so that a stable process can be performed.

Experimental Example

According to the method of the present invention described above, the silicon single crystal is grown to a diameter of 1.5 times or more the final diameter before the necking diameter is finally reduced to 3-5 mm by adjusting the pulling speed of the silicon single crystal, and then the length is limited to 240 mm. After the necking process to reduce the diameter to 3 ~ 5mm to grow the silicon single crystal in the <110> crystal orientation. When the growth of the silicon single crystal is removed from the growth device 15 was cut using a ceramic scissors from the seed crystal to the bottom end of the necking, a sample was repeated four times in total.

Then, the necking site of the sample was observed by an optical microscope after 15 minutes or more of the light etching.

5 is a shape of slip dislocations observed with an optical microscope after light etching is performed.

In order to observe the pit shape as shown in FIG. 5, it is preferable to process the Wright etching for 15 minutes or more. Wright etchant was HF, HNO ₃ , CrO ₃ aqueous solution (5 mol%). As a mixed solution of Cu (NO ₃ ) ₂ , CH ₃ COOH, and H ₂ O, the etching rate is about 1 μm / min. If the Wright etch was processed for less than 15 minutes, it was difficult to observe the shape of the pit, which is considered a slip dislocation, and contaminants were not completely removed. However, the Wright etch time does not significantly affect the evaluation as long as it is 15 minutes or more, so it is not necessary to keep it too long to shorten the overall evaluation time.

The most difficult point in observing the slip dislocation is to distinguish between the pit, which is considered a slip dislocation, and simply the fine hole by etching and the remaining contaminants. The method devised to solve this problem is to use the depth of focus of the optical microscope. In the case of the pit, which is considered to be a slip dislocation, the afterimage remains sharply when adjusting the focus. In other cases, the afterimage is unclear. Significant afterimages during adjustment were classified as feet. In practice, however, this method requires some practice. The shape of the pit, which is considered to be a slip dislocation, is mainly a rhombus, a rectangle or an ellipse. The most slip dislocations in the seed crystal portion are due to the largest area of thermal shock in contact with the melt surface, and it is necking to remove such slip dislocations.

In the experimental example, the last point where such a pit shape existed at the necking site was defined as the point where the slip dislocation completely disappeared. Figure 6 shows the necking diameter according to the necking length in the present invention and a comparative example.

As shown in FIG. 6A, in the case of the present invention, silicon single crystals were first grown until the diameter of the final necking diameter was 1.5 times or more, and then thinly grown to the final necking diameter of 3 to 5 mm. FIG. 6B is a comparative example, in which the diameter is gradually reduced to a final diameter of 3 to 5 mm according to the conventional dash necking method.

Figure 7 measures the length of the slip dislocation actually disappears in the necking in the present invention and the comparative example.

Samples according to the present invention and the comparative examples were prepared under the same conditions as in FIG. 6, and were observed once along each of four side surfaces in the seed crystal having a square pillar shape as shown in FIG. 1. Two sides had convex long nodes that occurred during silicon single crystal growth, and two had no nodes.

The diameter of the necking of the crystal orientation is elliptical, and the two parts with nodes are farthest from the elliptical. Since the measurement of the slip dislocation is made with an optical microscope, the amount of light reflected and collected is much smaller than that without a node. Therefore, the surface where the node is present is not easy to observe the pit, and the point where the slip dislocation disappears is observed closer to the seed crystal than the portion where the node is not present.

In FIG. 7, (A) is a measurement result for the plane without a node, and (B) is a measurement result for the plane with a node. If any of the pits considered to be slip dislocations are present, growth of silicon single crystals does not occur. Therefore, as shown in FIG. I will.

It can be seen that the sample number "1" is the case according to the invention and the slip dislocation at the necking is removed after 180 mm. Sample numbers "2", "3", and "4" are the comparative examples as in the prior art, and the length of the slip dislocation disappearing should be 230 mm or more, and it can be seen that 250 mm or more is suitable for removing the slip dislocation more stably. . From this, it can be seen that according to the present invention, slip dislocations can be removed more quickly by 40 mm or more than in the general necking process. Accordingly, there is an advantage that the silicon single crystal body portion can be formed longer than 40mm.

As mentioned above, the present invention has been described in detail with reference to preferred examples and experimental examples, but the present invention is not limited to the above examples and experimental examples, and should be understood by those skilled in the art within the technical spirit of the present invention. It is obvious that many other variations are possible.

As described above, according to the present invention, before narrowing to a uniform necking diameter (3 to 5 mm), without reducing the necking diameter to 2 mm or forming a large number of irregularities after a certain diameter in order to eliminate slip dislocations. The necking can be grown to 1.5 times the diameter to remove the slip dislocation within the short necking length to grow the silicon single crystal.

The slip dislocation can be removed more than 40mm faster than by the general necking process, thereby reducing the necking process time and producing more single crystals by the shorter necking length. In addition, the process is simple, it is possible to maintain a constant tensile strength can reduce the load change affected by the diameter change and can proceed a stable process.

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Therefore, the present invention is suitable for growing a silicon single crystal by the CZ method, increases the success rate of pulling up the silicon single crystal at no potential, and is formed at the tip of the seed crystal even in the growth of a silicon single crystal having a crystal orientation of <110>. It is possible to grow a silicon single crystal having a large diameter of 200 mm or more in the silicon single crystal part by setting the minimum diameter of the crystal to be 3 to 5 mm, which is a conventional level.

Claims (6)

In the silicon single crystal growth method comprising the necking (necking) forming step, the necking forming step, Growing silicon single crystals from the seed crystals until they are at least 1.5 times the diameter of the final necking diameter; And Reducing the diameter of the silicon single crystal and growing thinly to a constant final necking diameter of 3 to 5 mm to remove slip dislocations. The silicon single crystal growth method according to claim 1, wherein the slip dislocation is removed by the necking forming step from 180 mm to 220 mm from the bottom of the seed crystal. The method of growing silicon single crystal according to claim 1, wherein the single crystal having a crystal orientation of <110> is used to grow a silicon single crystal having a crystal orientation of <110>. delete delete delete

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