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KR100836750B1 - Electrostatic chuck of dry etching apparatus for semiconductor manufacture - Google Patents

Electrostatic chuck of dry etching apparatus for semiconductor manufacture Download PDF

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Publication number
KR100836750B1
KR100836750B1 KR1020060108144A KR20060108144A KR100836750B1 KR 100836750 B1 KR100836750 B1 KR 100836750B1 KR 1020060108144 A KR1020060108144 A KR 1020060108144A KR 20060108144 A KR20060108144 A KR 20060108144A KR 100836750 B1 KR100836750 B1 KR 100836750B1
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KR
South Korea
Prior art keywords
electrostatic chuck
etching apparatus
electrostatic
wafer
semiconductor
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KR1020060108144A
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Korean (ko)
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KR20080040332A (en
Inventor
신문우
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동부일렉트로닉스 주식회사
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Priority to KR1020060108144A priority Critical patent/KR100836750B1/en
Publication of KR20080040332A publication Critical patent/KR20080040332A/en
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Publication of KR100836750B1 publication Critical patent/KR100836750B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

본 발명은 반도체 제조용 식각장치의 정전척에 관한 것으로서, 원주 방향으로 배치되는 복수의 정전척(100)과, 복수의 정전척(100)이 원주 방향으로 회동 가능하도록 정전척(100)의 양단부에 설치되는 회동수단(110)과, 회동되는 정전척(100)의 하부에서 실린더(120)로 하여 승하강 가능하도록 설치되며 미사용 중인 정전척(100)의 상면을 크리닝하게 되는 세정수단(130)을 포함한다. 따라서 본 발명은, 매 웨이퍼 마다에 오염 물질이 제거된 정전척을 교번 사용할 수 있게되어 결점 원인이 다른 웨이퍼로의 전이됨을 방지하여 품질 향상의 효과를 가지고 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic chuck of an etching apparatus for manufacturing a semiconductor, and includes a plurality of electrostatic chucks 100 arranged in the circumferential direction, and both ends of the electrostatic chuck 100 such that the plurality of electrostatic chucks 100 can rotate in the circumferential direction. Rotating means 110 is installed, and the washing means 130 is installed so as to be able to move up and down by the cylinder 120 from the lower portion of the rotating electrostatic chuck 100 and to clean the upper surface of the unused electrostatic chuck 100 Include. Therefore, the present invention can alternately use an electrostatic chuck from which contaminants have been removed for every wafer, thereby preventing the defect from being transferred to another wafer, thereby improving quality.

식각장치, 챔버, 정전척, 교번 사용 Etching device, chamber, electrostatic chuck, alternating use

Description

반도체 제조용 식각장치의 정전척{ELECTROSTATIC CHUCK OF DRY ETCHING APPARATUS FOR SEMICONDUCTOR MANUFACTURE}ELECTROSTATIC CHUCK OF DRY ETCHING APPARATUS FOR SEMICONDUCTOR MANUFACTURE}

도 1은 종래의 기술에 따른 건식 식각장치의 개략적인 구성도를 도시한 단면도이고,1 is a cross-sectional view showing a schematic configuration diagram of a dry etching apparatus according to the prior art,

도 2는 본 발명의 실시예 따른 반도체 제조용 식각장치의 정전척의 정면도이고,2 is a front view of an electrostatic chuck of an etching apparatus for manufacturing a semiconductor according to an embodiment of the present invention,

도 3은 본 발명의 실시예 따른 반도체 제조용 식각장치의 정전척의 측면도이고,3 is a side view of an electrostatic chuck of an etching apparatus for manufacturing a semiconductor according to an embodiment of the present invention,

도 4는 본 발명의 실시예 따른 정전척의 사용 상태도이다.4 is a state diagram of use of the electrostatic chuck in accordance with an embodiment of the present invention.

<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>

100 : 정전척 110 : 회동수단100: electrostatic chuck 110: rotation means

120 : 실린더 130 : 세정수단120: cylinder 130: cleaning means

131 : 본체 132 : 개구부131: main body 132: opening

133 : 가스공급부 134 : 진공펌프133: gas supply unit 134: vacuum pump

140 : 전원공급부 140: power supply

본 발명은 반도체 제조용 식각장치의 정전척에 관한 것으로서, 보다 상세하게는 복수의 정전척을 가지고서 오염된 정전척과 크리닝이 완료된 정전척을 교번 사용하도록 하여 정전척을 통한 오염을 방지할 수 있는 반도체 제조용 식각장치의 정전척에 관한 것이다.The present invention relates to an electrostatic chuck of an etching apparatus for manufacturing a semiconductor, and more particularly, to a semiconductor manufacturing that can prevent contamination through an electrostatic chuck by using alternating electrostatic chucks having a plurality of electrostatic chucks and cleaned electrostatic chucks alternately. The electrostatic chuck of the etching apparatus.

일반적으로 반도체를 제조하는 과정에서 미세한 패턴 형성을 위해 식각 공정을 수행하게 되는데, 이러한 식각 공정은 크게 습식식각(wet etching)과 건식식각(dry etching)으로 나누어진다.In general, an etching process is performed to form a fine pattern in the process of manufacturing a semiconductor. The etching process is largely divided into wet etching and dry etching.

이 중 습식식각은 공정이 비교적 간단하고 비용이 적게드는 장점이 있기는 하나 언더컷(undercut)의 발생이라는 단점이 있기 때문에 최근에는 고집적화된 반도체 소자의 식각에 대부분 건식식각을 주로 사용하고 있다.Among them, wet etching is relatively simple and inexpensive. However, wet etching is mainly used for etching of highly integrated semiconductor devices because of the disadvantage of undercut.

이하, 도면을 참조하여 종래 기술의 반도체 제조용 식각장치를 설명하면 다음과 같다.Hereinafter, an etching apparatus for manufacturing a semiconductor of the prior art will be described with reference to the accompanying drawings.

도 1에서와 같이, 불활성 기체 및 반응 가스로 충만된 챔버(10)내부의 상단에 형성된 상부전극(12)과, 상부전극(12)의 대향하는 챔버(10)의 하단에 형성된 하부전극(14)과, 하부전극(14)상에서 웨이퍼(W)를 고정 부착하는 정전척(16)과, 정전척(16)의 하부에 연결되고 챔버(10)의 외부에서 정전압 또는 역전압을 공급하는 정전척 전원공급부(20)가 구비된다. As shown in FIG. 1, an upper electrode 12 formed at an upper end of a chamber 10 filled with an inert gas and a reactive gas, and a lower electrode 14 formed at a lower end of a chamber 10 facing the upper electrode 12. ), An electrostatic chuck 16 fixedly attaching the wafer W on the lower electrode 14, and an electrostatic chuck connected to the lower portion of the electrostatic chuck 16 and supplying a constant voltage or a reverse voltage from the outside of the chamber 10. The power supply unit 20 is provided.

또한, 정전척(16)의 가장자리에서는 스크류홀(미도시)을 통해 정전척(16)을 하부전극(14)에 고정하는 스크류(22)가 마련되고, 스크류(22) 및 스크류홀을 플라 즈마 반응으로부터 보호하고 정전척(16)의 가장자리에 설치되는 에지링(24)이 있으며, 에지링(24)을 지지하고 플라즈마 반응시 정전척(16)의 척벽을 보호하는 절연링(26)이 설치된다.In addition, at the edge of the electrostatic chuck 16, a screw 22 is provided to fix the electrostatic chuck 16 to the lower electrode 14 through a screw hole (not shown), and the screw 22 and the screw hole are provided with plasma. There is an edge ring 24 that protects against reaction and is installed at the edge of the electrostatic chuck 16. An insulation ring 26 is installed to support the edge ring 24 and to protect the chuck wall of the electrostatic chuck 16 during the plasma reaction. do.

또, 식각 공정의 수행을 위하여 챔버(10)의 내부는 일정한 압력과 온도를 유지해야만 하며, 이때 지속적으로 챔버(10)의 하부에 설치된 배기라인(30)을 통하여 배출된다. 배기라인(30)은 진공펌프(32)의 구동에 의해서 챔버(10)의 내부로부터 잔류 잔응 가스와 파티클을 강제 배출되도록 구성한다.In addition, in order to perform the etching process, the inside of the chamber 10 must maintain a constant pressure and temperature, and at this time, it is continuously discharged through the exhaust line 30 installed under the chamber 10. The exhaust line 30 is configured to forcibly discharge residual residual gas and particles from the inside of the chamber 10 by driving the vacuum pump 32.

여기서, 상부전극(12) 및 하부전극(14)에 외부로부터 교류 고전압이 각각 인가되면, 챔버(10)의 내부에서 불활성 기체 및 반응 가스를 이온과 전자로 분리시켜 플라즈마 상태로 만들어 식각 공정이 진행된다.Here, when an alternating current high voltage is applied to the upper electrode 12 and the lower electrode 14 from the outside, the inert gas and the reactive gas are separated into ions and electrons inside the chamber 10 to form a plasma state, and an etching process is performed. do.

따라서, 플라즈마 상태의 이온은 반응 가스의 종류에 따라 웨이퍼에 형성된 포토레지스트 또는 식각 방지막을 식각 마스크로 사용하여 식각 마스크에 의해 노출된 웨이퍼(W) 또는 웨이퍼(W) 상에 형성된 박막을 선택적으로 식각한다.Accordingly, the ions in the plasma state selectively etch the thin film formed on the wafer W or the wafer W exposed by the etching mask using a photoresist or an etch stop layer formed on the wafer as an etching mask according to the type of reaction gas. do.

또한, 식각 공정시 정전척(16)과 전원공급부(20)에서 정전척(16)에 교류 또는 직류의 정전압 또는 역전압을 인가하여 웨이퍼(W)를 정전척(16)에 밀착 고정한다. 이때, 정전척(16)은 각각 웨이퍼(W)에 접촉하는 세라믹 재질의 유전막(15)과 유전막(15) 하부의 척바디(17)로 구성되어 식각 공정 시 웨이퍼(W)를 압착하는 역할을 수행한다.In addition, during the etching process, the electrostatic chuck 16 and the power supply unit 20 apply a constant voltage or a reverse voltage of alternating current or direct current to the electrostatic chuck 16 to fix the wafer W to the electrostatic chuck 16. At this time, the electrostatic chuck 16 is composed of a dielectric film 15 of a ceramic material in contact with the wafer W and a chuck body 17 below the dielectric film 15 to compress the wafer W during the etching process. Perform.

그런데, 위와 같은 종래의 정전척(16)은, 웨이퍼(W)에 물리적 손상을 최소화할 수 있다는 장점을 가지고 있지만, 반면에 발생되어지는 정전기에 의해 파티클의 원인이 되기도 하고, 이미 백 사이드가 오염된 웨이퍼가 정전척(16)에 오염시킴에 따른 2차전이를 유발하여 웨이퍼 제품의 품질저하의 원인이 되는 문제점이 있었다. By the way, the conventional electrostatic chuck 16 as described above has the advantage that the physical damage to the wafer (W) can be minimized, on the other hand, it may cause particles by the static electricity generated, and the back side is already contaminated There was a problem that the secondary wafer caused by the contamination of the wafers contaminated the electrostatic chuck 16 causes the quality of the wafer product.

본 발명은 상기한 바와 같은 결점을 해소시키기 위하여 안출된 것으로서, 웨이퍼를 홀딩할 수 있는 정전척이 회동수단으로 하여 교번 사용될 수 있도록 복수개 구비되고, 그 복수의 정전척 중 미사용 중인 정전척을 크리닝할 수 있는 세정수단을 구비함으로써, 매 웨이퍼 마다에 오염 물질이 제거된 정전척을 교번 사용할 수 있게되어 결점 원인이 다른 웨이퍼로의 전이됨을 방지할 수 있는 반도체 제조용 식각장치의 정전척을 제공하는 것을 그 목적으로 한다.The present invention has been made to solve the above-described drawbacks, and a plurality of electrostatic chucks capable of holding wafers are provided so that they can be used alternately as a rotating means, and among the plurality of electrostatic chucks to clean unused electrostatic chucks. It is possible to provide an electrostatic chuck of an etching apparatus for manufacturing a semiconductor device capable of alternately using an electrostatic chuck from which contaminants have been removed on each wafer, thereby preventing the defect from being transferred to another wafer. The purpose.

상술한 목적을 달성하기 위한 본 발명은, 플라즈마 반응 시 챔버내에서 웨이퍼를 홀딩하는 반도체 제조용 식각장치의 정전척에 있어서, 원주 방향으로 배치되는 복수의 정전척과, 복수의 정전척이 원주 방향으로 회동 가능하도록 정전척의 양단부에 설치되는 회동수단과, 회동되는 정전척의 하부에서 실린더로 하여 승하강 가능하도록 설치되며 미사용 중인 정전척의 상면을 크리닝하게 되는 세정수단을 포함을 포함하되, 세정수단은, 정전척의 일면을 포함할 수 있도록 상면에 개구부를 형성하는 본체와, 본체의 하부측에 설치되어 고압의 질소가스가 분사될 수 있도록 하는 가스공급부와, 본체의 측면에 설치되어 질소가스와 오염물질을 배출하는 진공펌프를 포함하는 반도체 제조용 식각장치의 정전척을 제공한다. The present invention for achieving the above object, in the electrostatic chuck of the etching apparatus for semiconductor manufacturing holding the wafer in the chamber during the plasma reaction, a plurality of electrostatic chuck disposed in the circumferential direction, the plurality of electrostatic chuck is rotated in the circumferential direction Rotation means provided at both ends of the electrostatic chuck so as to be capable of raising and lowering as a cylinder from the lower portion of the electrostatic chuck being rotated, and including cleaning means for cleaning the upper surface of the unused electrostatic chuck, wherein the cleaning means includes: A main body forming an opening on the upper surface to include one surface, a gas supply part installed at a lower side of the main body to inject high pressure nitrogen gas, and a side surface of the main body to discharge nitrogen gas and pollutants The present invention provides an electrostatic chuck of an etching apparatus for manufacturing a semiconductor including a vacuum pump.

이하 첨부된 도면을 참조하여 본 발명의 바람직한 실시 예에 대하여 상세하게 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 2는 본 발명의 실시예 따른 반도체 제조용 식각장치의 정전척의 정면도이고, 도 3은 본 발명의 실시예 따른 반도체 제조용 식각장치의 정전척의 측면도이 고, 도 4는 본 발명의 실시예 따른 정전척의 사용 상태도이다.2 is a front view of an electrostatic chuck of the etching apparatus for manufacturing a semiconductor according to an embodiment of the present invention, Figure 3 is a side view of the electrostatic chuck of the etching apparatus for manufacturing a semiconductor according to an embodiment of the present invention, Figure 4 is the use of an electrostatic chuck according to an embodiment of the present invention State diagram.

본원의 발명에서는 설명의 편의를 위하여 정전척에 설치되는 하부전극, 에지링, 절연링, 스크류(도 1참조) 등은 설명과 도시를 생략하였으며, 더욱이 복수의 정전척은 적어도 하나 이상 즉, 3개나 4개도 설치될 수 있으나 도시된 도면에서는 실시예로 2개를 도시하였다.In the present invention, for convenience of description, the lower electrode, the edge ring, the insulating ring, the screw (see FIG. 1), etc. installed in the electrostatic chuck are omitted from the description and illustration. Although four or four may be installed, two of them are illustrated in the drawing.

따라서 도시된 도 2 및 도 3에서의 정전척 구조는, 복수의 정전척(100)이 원주 방향을 따라 회동 가능하도록 배치 설치되며, 각 정전척(100)의 양단부에 회동수단(110)이 설치되어 복수의 정전척(100)을 고정함과 같이 원주 방향으로의 회동을 가능하게 한다.Thus, the electrostatic chuck structure shown in FIGS. 2 and 3 is arranged so that the plurality of electrostatic chucks 100 can rotate in the circumferential direction, and the rotating means 110 are installed at both ends of each electrostatic chuck 100. It is possible to rotate in the circumferential direction, such as to fix the plurality of electrostatic chuck (100).

회동수단(110)은 정확한 각도에 따른 회전을 위하여 서보모터 또는 스텝모터의 사용이 바람직하다.Rotating means 110 is preferably used for the servo motor or step motor for rotation according to the correct angle.

한편, 회동되는 정전척(100)의 하부에 미사용 중인 정전척(100)의 상면을 크리닝하게 되는 세정수단(130)이 설치된다.On the other hand, the cleaning means 130 for cleaning the upper surface of the unused electrostatic chuck 100 is installed below the rotating electrostatic chuck 100.

바람직하게 세정수단(130)은 실린더(120)로 하여 승하강 이동이 가능하며, 이는 정전척(100)의 회동 공간 확보를 위함이다.Preferably, the cleaning means 130 can be moved up and down by the cylinder 120, which is to ensure the rotation space of the electrostatic chuck (100).

세정수단(130)은, 크게 본체(131)와 가스공급부(133) 그리고 진공펌프(134)로 구성되어지며, 본체(131)는 내부 공간을 가지는 챔버 형태로 하여 정전척(100)의 일면을 포함할 수 있도록 상면에 개구부(132)를 형성한다.The cleaning means 130 is largely composed of a main body 131, a gas supply unit 133, and a vacuum pump 134. The main body 131 is formed in a chamber shape having an internal space, and forms one surface of the electrostatic chuck 100. The opening 132 is formed on the upper surface to be included.

그리고 본체(131)의 하부측에는 개구부(132)에 포함된 정전척(100)을 향하여 고압의 질소가스가 분사될 수 있도록 하는 가스공급부(133)가 설치되며, 또, 본 체(131)의 측면에는 질소가스와 오염물질을 배출하는 진공펌프(134)가 설치된다. And the lower side of the main body 131 is provided with a gas supply unit 133 to inject high-pressure nitrogen gas toward the electrostatic chuck 100 included in the opening 132, the side of the main body 131 The vacuum pump 134 for discharging nitrogen gas and pollutants is installed.

또한, 복수의 정전척(100) 각각에는 전원공급부(140)가 연결되는 구성을 가진다.In addition, each of the plurality of electrostatic chuck 100 has a configuration in which the power supply unit 140 is connected.

이와 같이 구성된 본 발명에 따른 반도체 제조용 식각장치의 정전척의 작용을 설명하면 다음과 같다.Referring to the operation of the electrostatic chuck of the etching apparatus for manufacturing a semiconductor according to the present invention configured as described above are as follows.

먼저, 종래 도면 도 1을 참고하면, 상부전극 및 하부전극에 외부로부터 교류 고전압이 각각 인가되면, 챔버의 내부에서 불활성 기체 및 반응 가스를 이온과 전자로 분리시켜 플라즈마 상태로 만들어 식각 공정이 진행된다.First, referring to FIG. 1, when an alternating current high voltage is applied to the upper electrode and the lower electrode from the outside, an inert gas and a reactive gas are separated into ions and electrons inside the chamber, and an etching process is performed. .

따라서, 플라즈마 상태의 이온은 반응 가스의 종류에 따라 웨이퍼에 형성된 포토레지스트 또는 식각 방지막을 식각 마스크로 사용하여 식각 마스크에 의해 노출된 웨이퍼(W) 또는 웨이퍼(W) 상에 형성된 박막을 선택적으로 식각한다.Accordingly, the ions in the plasma state selectively etch the thin film formed on the wafer W or the wafer W exposed by the etching mask using a photoresist or an etch stop layer formed on the wafer as an etching mask according to the type of reaction gas. do.

또한, 식각 공정시 정전척과 전원공급부에서 정전척에 교류 또는 직류의 정전압 또는 역전압을 인가하여 웨이퍼(W)를 정전척에 밀착 고정한다. 이때, 정전척은 각각 웨이퍼(W)에 접촉하는 세라믹 재질의 유전막과 유전막 하부의 척바디로 구성되어 식각 공정 시 웨이퍼(W)를 압착하는 역할을 수행한다.In addition, during the etching process, the wafer W is fixed to the electrostatic chuck by applying a constant voltage or a reverse voltage of alternating current or direct current to the electrostatic chuck from the electrostatic chuck and the power supply unit. At this time, the electrostatic chuck is composed of a dielectric film made of a ceramic material in contact with the wafer W and a chuck body under the dielectric film, thereby compressing the wafer W during the etching process.

이러한 식각 공정에서 식각이 완료된 웨이퍼(W)는 매번 교체가 이루어지게 되는데, 새로운 웨이퍼(W)의 교체 이전에 본 발명에 따라 사용된 정전척(100)은 회동수단(110)을 통하여 일정 각도 만큼, 도시된 도면에 따라서는 180도 회전을 하게 된다. 이 때, 실린더(120)로 하여 세정수단(130)은 하강 이동되어 정전척(100)의 회동 공간을 확보하게 된다.In this etching process, the wafer W, which has been etched, is replaced every time. The electrostatic chuck 100 used according to the present invention before the replacement of the new wafer W is rotated by a predetermined angle through the rotation means 110. In accordance with the drawing, the rotation is 180 degrees. At this time, the cleaning means 130 is moved downward as a cylinder 120 to secure the rotation space of the electrostatic chuck (100).

따라서 사용된 정전척(100)은 180도 회전하여 상면이 하방을 향하는 상태가 되며, 다음과 같은 상태에서 세정수단(130)은 다시 실린더(120)로 하여 원위치로 승강하여 본체(131)의 개구부(132)에 정전척(100)의 상면 일부를 포함하게 된다.Therefore, the used electrostatic chuck 100 is rotated 180 degrees and the upper surface is downward, and in the following state, the cleaning means 130 is elevated to the original position by the cylinder 120 again, the opening of the main body 131 A portion of the upper surface of the electrostatic chuck 100 is included in 132.

이어서 본체(131)에 설치된 가스공급부(133)를 통해서는 고압의 질소 가스가 정전척(100)의 상면에 분사되어 오염된 이물질을 제거하게 되며, 이 제거된 이물질과 질소 가스는 진공펌프(134)로 하여 외부로 배출된다.Subsequently, a high pressure nitrogen gas is sprayed on the upper surface of the electrostatic chuck 100 to remove contaminated foreign substances through the gas supply unit 133 installed in the main body 131. The removed foreign substances and nitrogen gas are vacuum pumps 134. Is discharged to outside.

위와 같이 식각 사용시 오염되어 회동된 정전척(100)을 세정하는 동안 세정이 완료된 또 다른 정전척(100)은 웨이퍼(W)의 홀딩 가능한 위치로 회동된다.While cleaning the electrostatic chuck 100 contaminated and rotated during the etching use as described above, another electrostatic chuck 100 which has been cleaned is rotated to a holdable position of the wafer (W).

이처럼 교번 가능한 복수의 정전척(100)을 가지고서 어느 하나의 정전척(100)이 웨이퍼를 홀딩하고 있는 동안에 다른 하나의 정전척(100)은 세정수단(130)을 통하여 크리닝이 이루어져서 다음 사용이 가능하도록 대기 위치에 놓이게 됨으로써, 매 웨이퍼의 사용시 세정된 정전척(100)으로 하여 웨이퍼를 홀딩할 수 있게 되어 오염을 방지할 수 있는 매우 유용한 발명이다.Thus, while one of the electrostatic chuck 100 has a plurality of alternating electrostatic chuck 100 while holding the wafer, the other electrostatic chuck 100 is cleaned through the cleaning means 130 can be used next By being placed in the standby position, it is a very useful invention to be able to hold the wafer with the electrostatic chuck 100 cleaned in use of every wafer, thereby preventing contamination.

이상에서 설명한 것은 본 발명에 따른 반도체 제조용 식각장치의 정전척을 실시하기 위한 하나의 실시예에 불과한 것으로서, 본 발명은 상기한 실시예에 한정되지 않고, 이하의 특허청구범위에서 청구하는 바와 같이 본 발명의 요지를 벗어남이 없이 당해 발명이 속하는 분야에서 통상의 지식을 가진 자라면 누구든지 다양한 변경 실시가 가능한 범위까지 본 발명의 기술적 정신이 있다고 할 것이다. What has been described above is just one embodiment for performing the electrostatic chuck of the etching apparatus for manufacturing a semiconductor according to the present invention, the present invention is not limited to the above-described embodiment, as claimed in the following claims Without departing from the gist of the invention, anyone of ordinary skill in the art to which the present invention will have the technical spirit of the present invention to the extent that various modifications can be made.

이상에서 설명한 바와 같이, 본 발명에 의한 반도체 제조용 식각장치의 정전 척은, 웨이퍼를 홀딩할 수 있는 정전척이 회동수단으로 하여 교번 사용될 수 있도록 복수개 구비되고, 그 복수의 정전척 중 미사용 중인 정전척을 크리닝할 수 있는 세정수단을 구비함으로써, 매 웨이퍼 마다에 오염 물질이 제거된 정전척을 교번 사용할 수 있게되어 결점 원인이 다른 웨이퍼로의 전이됨을 방지하여 품질 향상의 효과를 가지고 있다.As described above, the electrostatic chuck of the etching apparatus for semiconductor manufacturing according to the present invention is provided with a plurality of electrostatic chucks capable of holding a wafer so as to be alternately used as a rotation means, and among the plurality of electrostatic chucks which are not in use. By providing cleaning means capable of cleaning, the electrostatic chuck from which contaminants have been removed can be alternately used for every wafer, thereby preventing defects from being transferred to other wafers, thereby improving quality.

Claims (4)

플라즈마 반응 시 챔버내에서 웨이퍼를 홀딩하는 반도체 제조용 식각장치의 정전척에 있어서,In the electrostatic chuck of the etching apparatus for semiconductor manufacturing holding the wafer in the chamber during the plasma reaction, 원주 방향으로 배치되는 복수의 상기 정전척과,A plurality of said electrostatic chucks arranged in the circumferential direction, 상기 복수의 정전척이 원주 방향으로 회동 가능하도록 상기 정전척의 양단부에 설치되는 회동수단과,Rotating means provided at both ends of the electrostatic chuck so that the plurality of electrostatic chucks can rotate in the circumferential direction; 상기 회동되는 정전척의 하부에서 실린더로 하여 승하강 가능하도록 설치되며 미사용 중인 상기 정전척의 상면을 크리닝하게 되는 세정수단을 포함하되,It includes a washing means installed to be able to move up and down as a cylinder in the lower portion of the rotating electrostatic chuck and to clean the upper surface of the unused electrostatic chuck, 상기 세정수단은,The cleaning means, 상기 정전척의 일면을 포함할 수 있도록 상면에 개구부를 형성하는 본체와,A main body defining an opening on an upper surface thereof so as to include one surface of the electrostatic chuck; 상기 본체의 하부측에 설치되어 고압의 질소가스가 분사될 수 있도록 하는 가스공급부와,A gas supply unit installed at a lower side of the main body to allow high pressure nitrogen gas to be injected; 상기 본체의 측면에 설치되어 질소가스와 오염물질을 배출하는 진공펌프Vacuum pump installed on the side of the main body to discharge nitrogen gas and pollutants 를 포함하는 반도체 제조용 식각장치의 정전척.Electrostatic chuck of the etching apparatus for manufacturing a semiconductor comprising a. 제 1 항에 있어서,The method of claim 1, 상기 복수의 정전척 각각에는 전원공급부가 연결되는 것을 특징으로 하는 반도체 제조용 식각장치의 정전척.The electrostatic chuck of the etching apparatus for semiconductor manufacturing, characterized in that the power supply is connected to each of the plurality of electrostatic chuck. 제 1 항에 있어서,The method of claim 1, 상기 회동수단은, The rotation means, 서보모터 또는 스텝모터가 사용되는 것을 특징으로 하는 반도체 제조용 식각장치의 정전척.An electrostatic chuck of an etching apparatus for manufacturing a semiconductor, wherein a servo motor or a step motor is used. 삭제delete
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US6132517A (en) 1997-02-21 2000-10-17 Applied Materials, Inc. Multiple substrate processing apparatus for enhanced throughput
KR20040053465A (en) * 2002-12-14 2004-06-24 동부전자 주식회사 Process Chamber And Method For Cleaning Electrostatic Chuck
JP2004327674A (en) * 2003-04-24 2004-11-18 Dainippon Screen Mfg Co Ltd Substrate inversion unit and substrate treatment apparatus having the same
KR20050108064A (en) * 2004-05-11 2005-11-16 삼성전자주식회사 Apparatus for removing particle on esc and method for removing the same

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US6132517A (en) 1997-02-21 2000-10-17 Applied Materials, Inc. Multiple substrate processing apparatus for enhanced throughput
KR20040053465A (en) * 2002-12-14 2004-06-24 동부전자 주식회사 Process Chamber And Method For Cleaning Electrostatic Chuck
JP2004327674A (en) * 2003-04-24 2004-11-18 Dainippon Screen Mfg Co Ltd Substrate inversion unit and substrate treatment apparatus having the same
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