KR100732785B1 - Filter array device and method thereof - Google Patents

Abstract

A filter array device and a manufacturing method thereof are provided to minimize a damage value in a low frequency band and a signal distortion in a high frequency band when removing the noise. A filter array device includes at least one resistor-bead-varistor phi type filter(41). Each of the resistor-bead-varistor phi type filter(41) includes a resistor, a first bead, a second bead, a first varistor, and a second varistor. The resistor is arranged between a second external electrode(25) and a third external electrode(26). The first bead and the second bead are arranged to be connected to each resistor in series at both ends of the resistor. The first varistor is arranged to be connected to the first bead in parallel between a first external electrode(24) and the second external electrode(25). And, the second external electrode(25) is arranged to be connected to the second bead in parallel between the first external electrode(24) and the third external electrode(26).

Description

Filter array device and method for manufacturing same {Filter Array Device and Method Thereof}

1 is an equivalent circuit diagram of a filter array element according to the present invention;

2 is a graph illustrating a sensitivity measurement result of the filter array device illustrated in FIG. 1;

3 to 8 illustrate a method of manufacturing a filter array device according to a first embodiment of the present invention.

9 to 11 are views showing a method of manufacturing a filter array element according to a second embodiment of the present invention,

12A to 12F are views showing another embodiment of the resistor forming groove shown in FIG. 9;

Explanation of symbols on the main parts of the drawings

1: cutting line 10: crimping member

11: first varistor sheet 12: second varistor sheet

13: bead sheet 13b: resistor forming groove

21: first internal electrode 22: second internal electrode

23: third internal electrode 24: first external electrode

25: second external electrode 26: third external electrode

30: cutting member 40: filter array element

41: resistor-bead-varistor π-type filter 41a: bead equivalent circuit

41c: DC resistor equivalent circuit

The present invention relates to a filter array element and a method of manufacturing the same, and more particularly, to a filter array element and a method of manufacturing the same that can minimize the loss in the low frequency band while protecting from noise, overvoltage and static electricity.

Filters are applied to remove noise components from the circuit, and such filters are resistor-capacitor π-type filters. The resistor-capacitor π-type filter has a wide band band, but has a large loss value in the low frequency band, and has a problem in that the circuit cannot be protected from overvoltage or electrostatic discharge (ESD).

A filter used to protect the circuit from noise, overvoltage or ESD is a resistor-varistor π-type filter. In a resistor-varistor π-type filter, the varistor acts as a capacitor when the circuit is operating normally at rated voltage, allowing the resistor-varistor π-type filter to function as a resistor-capacitor π-type filter. Conversely, if overvoltage or ESD occurs in the circuit, the varistor rapidly reduces the resistance, bypassing the current to ground, allowing the resistor-varistor π-type filter to protect the circuit from overvoltage or ESD.

The resistor-varistor π-type filter, which adds the function of protecting the circuit from overvoltage or ESD, can protect the circuit from overvoltage or ESD, but has a problem of large losses caused by resistors in low frequency bands, such as resistor-capacitor π-type filters. .

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-described problems, by adding a bead having an impedance characteristic of Z = R _A + jω _L to a resistor-varistor π-type filter to protect the circuit from overvoltage or ESD, The present invention provides a filter array device capable of minimizing a loss value in a low frequency band when removing noise and a method of manufacturing the same.

Another object of the present invention is to provide a filter array device capable of minimizing a loss value in a low frequency band and removing signal distortion in a high frequency band when removing noise, and a method of manufacturing the same.

The filter array device of the present invention is provided with at least one resistor-bead-varistor phi type filter, and the resistor-bead-varistor π-type filter may include a resistor, And first and second beads connected in series with a resistor, respectively, and first and second varistors connected in parallel with the first and second beads, respectively.

The structure of the filter array device of the present invention includes at least one first varistor sheet layer on which a first internal electrode is formed, and at least one second and third internal electrodes disposed on an upper side of the first varistor sheet layer and opposed to each other. A second varistor sheet layer to be formed, a bead sheet layer provided on an upper side of the second varistor sheet layer, a DC resistor having one or more formed on the bead sheet layer, and a first formed to be electrically connected to the first internal electrode. And one or more second and third external electrodes electrically connected to one external electrode and one or more second and third internal electrodes respectively formed.

The method of manufacturing a filter array device of the present invention comprises the steps of preparing and forming at least one first internal electrode on the front surface of the first varistor sheet, and at least one of the second and second opposing surfaces on the front surface of the second varistor sheet. (3) forming and preparing an internal electrode, preparing a bead sheet, sequentially stacking the first varistor sheet, the second varistor sheet, and the bead sheet, and then compressing them to form a crimping member. Cutting the pressing member to form a cutting member, firing the cutting member at a firing temperature, cutting the completed cutting member to form a cutting member, and forming a cutting member on the upper surface of the bead sheet layer of the cutting member. Forming at least two resistors and applying the first to third external electrodes when the resistors are formed on the upper surface of the bead sheet layer.

(First embodiment)

Hereinafter, a first embodiment of the present invention will be described with reference to the accompanying drawings.

1 is an equivalent circuit diagram of a filter array element according to the present invention. As shown, the filter array element 40 of the present invention is provided with one or more resistance-bead-varistor π-type filters 41, and the resistance-bead-varistor π-type filters 41 are each resistor R _A. And first and second beads 41a and 41b connected in series with the resistor R _A , respectively, and first and second varistors connected in parallel with the first and second beads 41a and 41b, respectively. V _T1 , V _T2 ).

Referring to the circuit configuration of the filter array element of the present invention in more detail as follows.

As shown in FIG. 1, the filter array element 40 includes one or more resistance-bead-varistor π-type filters 41, and each resistance-bead-varistor π-type filter 41 includes a resistor (R). _A ), the first bead (41a), the second bead (41b), the first varistor (V _T1 ) and the second varistor (V _T2 ) and each of these components will be described sequentially as follows.

The resistor R _A constituting the resistor-bead-varistor π-type filter 41 is disposed between the second external electrode 25 and the third external electrode 26, and the first and second beads 41a and 41b. Are arranged so as to be connected in series with the resistor R _A at both ends of the resistor R _A.

The first varistor V _T1 is arranged to be connected in parallel with the first bead 41a between the first external electrode 24 and the second external electrode 25, and the second varistor V _{T2 is} connected to the first external electrode. It is arranged to be connected in parallel with the second bead 41b between the 24 and the third external electrode 26. Here, the first external electrode 24 is a ground electrode, and the second external electrode 25 and the third external electrode 26 are used as signal input terminals or signal output terminals, respectively.

As described above, the first and second beads 41a and 41b disposed at both ends of the resistor R _A each include a resistor R _B and an inductance X _L , where Z = R _A + jω _L. It has an impedance characteristic of, and in the low frequency band when removing the noise through the resistor-bead-varistor π-type filter 41 because the resistance (R _A ) and the resistance (R _B ) are connected in parallel when viewed from the input terminal and the output terminal. In addition to improving attenuation of the signal, the first and second beads 41a and 41b may remove the signal distortion in the high frequency band. Here, the resistor R _A is used as the resistor 41c in the DC component, and the resistor R _B included in the first and second beads 41a and 41b is used as the AC component resistor.

For example, a conventional inductor-capacitor π-type filter has a frequency characteristic as shown in ① shown in FIG. 2, and a resistor-capacitor or resistor-varistor π-type filter has a frequency characteristic as shown in FIG. 2 as shown in FIG. 2. However, the resistive-bead-varistor π-type filter 41 of the present invention has the same frequency as 3 shown in Fig. 2 by the first and second beads 41a and 41b disposed across the resistor R _A. Show characteristics. That is, the initial loss is small and has the same frequency characteristics as that of the chasm resistor-capacitor or the resistor-varistor π-type filter.

Attached drawings show the structure of the filter array element 40 in which one or more resistor-bead-varistor π-type filters 41 are arranged to minimize signal attenuation in a low frequency band and distortion of a signal in a high frequency band. The description is as follows.

As shown in FIGS. 6 to 8, the structure of the filter array element 40 according to the first embodiment of the present invention includes a first varistor sheet layer 11a on which the first internal electrode 21 is formed, and a first varistor sheet layer 11a. The second varistor sheet layer 12a and the second varistor sheet layer 12a disposed on the varistor sheet layer 11a and having at least one second and third internal electrodes 22 and 23 facing each other. A bead sheet layer 13a provided on the upper side of the bead, a DC resistor 14 having one or more formed on the bead sheet layer 13a, and a first formed to be electrically connected to the first internal electrode 21. One or more second and third external electrodes 25 and 26 are electrically connected to the external electrodes 24 and the second and third internal electrodes 22 and 23, each of which is formed.

The structure of the filter array element 40 according to the first embodiment of the present invention will be described in more detail as follows.

The filter array element 40 is composed of a first varistor sheet layer 11a, a second varistor sheet layer 12a, and a bead sheet layer 13a as shown in FIG. Is as follows.

The first varistor sheet layer 11a has a first internal electrode 21 formed on an upper surface thereof, and the second varistor sheet layer 12a has a second and third internal electrodes 22 and 23 facing each other on its upper surface. Is formed. As shown in FIG. 6, the first and second varistor sheet layers 11a and 12a having the first to third internal electrodes 21, 22 and 23 are formed on the upper surface of the first varistor sheet layer 11a. The lower surface of the two varistor sheet layer 12a is formed by lamination, and the number of laminations is one or more. Here, the first and second varistor sheet layer (11a, 12a) is a mixture of ZnO-Bi ₂ O ₃ -Co ₃ O ₄ -Sb ₂ O ₃ system and additives, respectively, or ZnO-Pr ₆ O ₁₁ -Co ₃ A mixture of O ₄ system and rare earth is applied, and additive is SiO ₂ -MnCO ₃ -Cr ₂ O ₃ system, and rare earth is Nd ₂ O ₃ -Er ₂ O ₃ -Dy ₂ O ₃ system.

The bead sheet layer 13a is laminated and installed on the upper surface of the second varistor sheet layer 12a. At least one resistor 14 is formed on the upper surface of the bead sheet layer 13a, and the bead sheet layer 13a is NiO-ZnO-Fe ₂ O ₃ -CuO system is applied. 7 and 8 when the bead sheet layer 13a having the resistor 14 formed thereon is stacked on the top surfaces of the first and second varistor sheet layers 11a and 12a provided with at least one, as shown in FIG. As described above, the first to third internal electrodes 21, 22, and 23 provided with one or more are electrically connected to each other.

In order to electrically connect the first internal electrodes 21, the first external electrodes 24 are formed on both side surfaces of the cutting member 30 in the longitudinal direction, and the second and third internal electrodes 22 and 23 and the bead sheet are formed. In order to electrically connect the layer 13a and the resistor 14, one or more second and third external electrodes 25 and 26 are formed on both side surfaces of the cutting member 30 in the width direction to form one filter array element ( 40).

When the first to third external electrodes 24, 25, and 26 are formed on the cutting member 30, a first protective layer 51 having a Ni—Zn type applied to an upper surface of the bead sheet layer 13a is illustrated in FIG. 11. ) And a second protective layer 52 (shown in FIG. 11) to which a glass or epoxy dielectric material is applied are sequentially stacked, so that the filter array element 40 has moisture resistance and insulation.

The filter array element 40 configured as described above and the circuit of the filter array element 40 in FIG. 1 will be described as follows.

First, the region divided by the dotted lines shown in FIGS. 7 and 8 serves as one resistor-bead-varistor π-type filter 41 shown in FIG. 1, respectively. For example, the first and second varistor sheets having the first and second internal electrodes 21 and 22 connected to the first to third external electrodes 24, 25 and 26, respectively, shown in FIGS. 7 and 8. The layers 11a and 12a serve as the first and second varistors V _T1 and V _T2 shown in FIG. 1.

The resistance R _A shown in FIG. 1 connected in parallel with the first and second varistors V _T1 and V _T2 is performed by the resistor 14 formed in the bead sheet layer 13a and the resistor 14. ) Formed bead sheet layer (13a) is a function of the first and second beads (41a, 41b) connected to both ends of the resistor (R _A ), respectively. Here, the resistor 14 becomes a DC component resistor 41c indicated by 'R _A ' as a component symbol.

The manufacturing method of the filter array device according to the first embodiment of the present invention having the structure as described above will be described in detail with reference to the accompanying drawings.

3 to 8 are roads showing the manufacturing process of the filter array device according to the first embodiment of the present invention. First, the first varistor as shown in FIG. 3 to manufacture the filter array device as shown in FIG. The conductive material (Ag, Ag-Pd, Pt, Pd, Ni, Cu is selected from the material) on the front surface of the sheet 11 is one or more first internal using a silk printing method, plating or deposition method The electrode 21 is formed and prepared.

In addition to preparing the first varistor sheet 11, the conductive material (Ag, Ag-Pd, Pt, Pd, Ni, Cu is selected on the front of the second varistor sheet 12) is silk (silk) ) Forming and preparing the second and third internal electrodes 22 and 23 facing each other by using a printing method, a plating method, or a deposition method, and preparing the bead sheet 13. Conduct.

At least one first and second varistor sheets 11 and 12 are applied at this stage, respectively, as shown in FIG. 3, and their materials are ZnO-Bi ₂ O ₃ -Co ₃ O ₄ -Sb, respectively. A mixture of ₂ O ₃ system and additives is applied or a mixture of ZnO-Pr ₆ O ₁₁ -Co ₃ O ₄ system and rare earth is applied, the additive is SiO ₂ -MnCO ₃ -Cr ₂ O ₃ system, and rare earth is Nd ₂ O ₃ -Er ₂ O ₃ -Dy ₂ O ₃ system is applied. In addition, the bead sheet 13 is NiO-ZnO-Fe ₂ O ₃ -CuO system is applied.

When the first varistor sheet 11, the second varistor sheet 12, and the bead sheet 13 are prepared in this step, as shown in FIG. 4, the layers are sequentially stacked, and a press or other pressing method is performed. By pressing to form a pressing member 10 is carried out. When the pressing member 10 is formed, as shown in FIG. 5, the cutting member 10 is cut along the cutting line 1 using a sawing machine or the like to form the cutting member 30.

When the cutting member 30 is formed, the cutting member 30 is subjected to a binder at 300 to 400 ° C. and then fired at a firing temperature. Here, the firing temperature indicates a temperature set during the firing process, and the firing temperature causes the cutting member 30 to fire in the range of 900 to 1050 ° C. When the firing is completed, as shown in Figure 6, a material such as Ag, Ag-Pd, Pt, Pd, Ni, Cu on the upper surface of the bead sheet layer 13a of each cutting member 30, the silk printing method, sputtering method And forming one or more resistors 14 using roller dipping or pad printing methods. When the resistor 14 is formed, the resistor 14 is formed, and then heated by drying at an appropriate temperature.

When the resistor 14 is formed on the upper surface of the bead sheet layer 13a, the conductive material (Ag, Ag-Pd, Pt, Pd, Ni, Cu is selected from the material) as shown in FIG. The first to third external electrodes 24, 25, and 26 are coated by using a printing method, a roller dipping method, a pad printing method, a plating method, or a deposition method. The first external electrodes 24 formed in this step are formed on both side surfaces in the longitudinal direction of the cutting member 30 shown in FIG. 6 so that the first internal electrodes 21 formed on the first varistor layer 11a are electrically connected to each other. Each is formed. In addition, the second and third external electrodes 25 and 26 are formed on both side surfaces of the cutting member 30 in the width direction, respectively, and the second and third internal electrodes 22 and 23 formed on the second varistor layer 12a. The first and second beads 41a and 41b and the resistor 14 are electrically connected to each other.

When the first to third external electrodes 24, 25, and 26 are formed on the cutting member 30, the first protective layer 51 (shown in FIG. 11) to which the Ni—Zn system is applied to the bit sheet layer 13a may be formed. The second protective layer 52 (shown in FIG. 11) to which the dielectric material is applied is sequentially stacked to form the filter array element 40 as shown in FIG. 8.

Second Embodiment

Another embodiment of the method of manufacturing the filter array element 40 will be described with reference to the accompanying drawings.

9 to 11 are views illustrating a manufacturing process of the filter array device according to the second embodiment of the present invention. As shown in FIG. 9, at least one first internal electrode 21 is prepared on the front surface of the first varistor sheet 11 as shown in FIG. 9, and the front surface of the second varistor sheet 12 is prepared. Forming and preparing at least two opposing second and third internal electrodes 22 and 23 are performed.

At least one resistor forming groove 13b is prepared by preparing the first and second varistor sheets 11 and 12 and using a press or a punch mechanism (not shown) on the front surface of the bead sheet 13. ) To form and prepare. As shown in FIGS. 12A to 12F, the resistor forming groove 13b is formed in a 'V' shape, a 'U' shape, a 'c' shape, or the like, in addition to the single shape, thereby forming the straight resistor 14 in a V'-shaped resistor 14a. ), 'U' shaped resistor 14b or 'c' shaped resistor 14c.

When the first and second varistor sheets 11 and 12 and the bead sheet 13 are prepared through the above steps, the first varistor sheet 11, the second varistor sheet 12 and the bead sheet 13 are sequentially formed. After laminating, pressing is performed to form a pressing member 10 (shown in FIG. 4). In this step, one or more first and second varistor sheets 11 and 12 are provided and stacked, respectively.

When the pressing member 10 is formed, the pressing member 10 is cut along the cutting line 1 to form a cutting member 30 (shown in FIG. 5). When the cutting member 30 is formed in this step, the cutting member 30 is fired at a firing temperature, that is, 900 to 1050 ° C.

When the firing step of the cutting member 30 is completed, as shown in FIG. 10, a step of forming the resistor 14 in the resistor forming groove 13b formed in the bead sheet layer 13a of the cutting member 30 is performed. When the resistor 14 is formed, the first to third external electrodes are formed using a conductive material (A material selected from Ag, Ag-Pd, Pt, Pd, Ni, and Cu, as shown in FIGS. 8 and 11). After applying (24, 25, 26), as shown in FIG. 11, the first protective layer 51 to which the Ni-Zn system is applied to the bit sheet layer 13a and the dielectric material of glass and epoxy are The applied second protective layer 52 is sequentially stacked to manufacture the filter array element 40.

The materials of the first and second varistor sheets 11 and 12 and the bead sheet 13 in the above-described second embodiment are the first and second varistor sheets 11 and 12 and the bead sheet (in the first embodiment). 13, the first varistor sheet layer 11a, the second varistor sheet layer 12a and the bead sheet layer 13a in the first and second embodiments are the first varistor sheet 11, The separated state in the two varistor sheet 12 and the bead sheet 13 is shown to be used to distinguish it from the first varistor sheet 11, the second varistor sheet 12 and the bead sheet 13.

As described above, the filter array device of the present invention is configured by adding beads to both sides of the resistor in the resistor-varistor π-type filter to protect the circuit from overvoltage or ESD, and to reduce the loss in the low frequency band when noise is removed. It offers the advantage of minimizing signal distortion in values and high frequency bands.

In addition, by forming a resistor forming groove in the bead sheet at the time of forming the resistor, by using it to form a resistor provides an advantage that can be easily manufactured filter array elements.

Claims (16)

One or more resistor-bead-varistor π-type filters are provided, and each of the resistor-bead-varistor π-type filters includes a resistor, first and second beads connected in series with each of the resistors, and the first and second filters. A filter array element comprising: first and second varistors connected in parallel with two beads, respectively. The filter of claim 1, wherein the resistor-bead-varistor π-type filter comprises: a resistor disposed between the second external electrode and the third external electrode; First and second beads disposed at both ends of the resistor to be connected to the resistor in series; A first varistor disposed between the first external electrode and the second external electrode in parallel with the first bead; And a second varistor disposed between the first external electrode and the third external electrode so as to be connected in parallel with the second bead. A first varistor sheet layer having a first internal electrode formed thereon; A second varistor sheet layer disposed on the first varistor sheet layer and having at least one second and third internal electrode facing each other; A bead sheet layer provided above the second varistor sheet layer, At least one resistor formed on the bead sheet layer; A first external electrode formed to be electrically connected to the first internal electrode; And at least one second and third external electrodes formed to electrically connect the second and third internal electrodes, at least one of which is formed, and the bead sheet layer and the resistor, respectively. The filter array device of claim 3, wherein at least one of the first varistor sheet layer and the second varistor sheet layer is laminated. The method of claim 3, wherein the first varistor sheet layer and the first varistor sheet layer is a mixture of ZnO-Bi ₂ O ₃ -Co ₃ O ₄ -Sb ₂ O ₃ system and additives, respectively, or ZnO-Pr ₆ O A mixture of _11- Co ₃ O ₄ system and rare earth is applied, additive is SiO ₂ -MnCO ₃ -Cr ₂ O ₃ system, and rare earth is applied to Nd ₂ O ₃ -Er ₂ O ₃ -Dy ₂ O ₃ system. The filter array element characterized by the above-mentioned. The filter array device of claim 3, wherein the bead sheet layer is formed of a NiO—ZnO—Fe ₂ O ₃ —CuO system. 4. The filter array device according to claim 3, wherein the first protective layer and the second protective layer are sequentially stacked on the bead sheet layer on which the resistor is formed. 8. The filter array device of claim 7, wherein the first protective layer is formed of Ni-Zn, and the second protective layer is formed of a dielectric material. Preparing and forming one or more first internal electrodes on the front surface of the first varistor sheet; Forming and preparing at least one second and third internal electrodes facing each other on the front surface of the second varistor sheet; Preparing the bead sheet, Sequentially stacking the first varistor sheet, the second varistor sheet and the bead sheet, and then compressing the first varistor sheet to form a pressing member; Cutting the pressing member to form a cutting member; Firing the cutting member at a firing temperature; Forming at least one resistor on an upper surface of the bead sheet layer of the cutting member after the firing is completed; When the resistor is formed on the upper surface of the bead sheet layer, the method comprising the steps of applying the first to third external electrodes. Preparing and forming one or more first internal electrodes on the front surface of the first varistor sheet; Forming and preparing one or more opposing second and third internal electrodes on a front surface of the second varistor sheet; Preparing one or more resistor forming grooves on the front surface of the bead sheet; Sequentially stacking the first varistor sheet, the second varistor sheet and the bead sheet, and then compressing the first varistor sheet to form a pressing member; Cutting the pressing member to form a cutting member; Firing the cutting member at a firing temperature; Forming a resistor in at least one resistor forming groove formed in the bead sheet layer of the cutting member after the firing is completed; When the resistor is formed on the upper surface of the bead sheet layer, the method comprising the steps of applying the first to third external electrodes. The method of claim 9 or 10, wherein at least one of the first varistor sheet and the second varistor sheet is laminated. The method of claim 9 or 10, wherein the first varistor sheet and the second varistor sheet is a ZnO-Bi ₂ O ₃ -Co ₃ O ₄ -Sb ₂ O ₃ system and a mixture of additives or ZnO-Pr, respectively A mixture of ₆ O ₁₁ -Co ₃ O ₄ system and rare earth is applied, additive is SiO ₂ -MnCO ₃ -Cr ₂ O ₃ system, and rare earth is Nd ₂ O ₃ -Er ₂ O ₃ -Dy ₂ O ₃ system Method for manufacturing a filter array element, characterized in that applied. The method of claim 9, wherein the bead sheet is a NiO—ZnO—Fe ₂ O ₃ —CuO system. The method of claim 9, wherein the firing temperature is 900 to 1050 ° C. in the step of firing the pressing member at a firing temperature. The first protective layer and the dielectric according to claim 9 or 10, wherein when the first to third external electrodes are applied in the step of applying the first to third external electrodes, Ni-Zn-based is applied to the bit sheet layer. A method of manufacturing a filter array device, characterized in that the second protective layer to which the material is applied is sequentially stacked. The filter array device according to claim 10, wherein the resistor forming groove formed in the bead sheet is formed by selecting any one of a straight line, a 'V' shape, a 'U' shape, and a 'c' shape. Manufacturing method.

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