KR100732491B1 - Low-energy thinfilm deposition apparatus - Google Patents

Abstract

A low energy thin film deposition apparatus is provided to lower a driving voltage by performing low temperature and lower energy thin film deposition even through one target. A low energy thin film deposition apparatus includes a target(230), and a substrate(250). A horizontal shaft of the target(230) in parallel to a surface of the target(230) is slanted for a horizontal shaft of the substrate(250) in parallel to a bottom plane of a table supported by the substrate(250) at a predetermined angle to extend a propagation path where a neutron emitted from the target(230) when sputtering reaches the substrate(250). The target(230) is installed to be spaced apart from a vertical part of a substrate thin film deposition point.

Description

Low energy thin film deposition apparatus

1 is a block diagram for explaining a counter target sputtering apparatus according to the prior art.

2 is a block diagram illustrating a low energy thin film deposition apparatus according to an embodiment of the present invention.

3 is a block diagram illustrating a slit of a low energy thin film deposition apparatus according to an embodiment of the present invention.

Figure 4 is a block diagram for explaining a low energy thin film deposition apparatus according to another embodiment of the present invention.

5 is a block diagram illustrating a low energy thin film deposition apparatus according to another embodiment of the present invention.

6 is a schematic view for explaining a configuration in which a plurality of low-energy thin film deposition apparatuses according to the present invention are arranged.

<Description of the symbols for the main parts of the drawings>

210: vacuum chamber 221: target holder

222: permanent magnet 230: target

241: shield 241a: slit

243, 244, 346, 441, 442: solenoid 250: substrate

340: valve 440: elbow

The present invention relates to a low energy thin film deposition apparatus for depositing a thin film on a substrate requiring low energy low temperature coating, and in particular, it is possible to prevent substrate damage due to high energy ion collision, as well as to prevent particle deposition. The present invention relates to a low energy thin film deposition apparatus for selectively depositing only low energy neutral particles.

Recently, as a self-luminous display device that does not require a separate light emitting device such as a backlight, an anode, such as a transparent electrode or ITO, and Cr, Al, Li, Mg on a single molecule, low molecule, or polymer thin film substrate is used. And an organic EL device which deposits a cathode made of a material such as Ag and generates light of a specific wavelength by recombination energy of electrons and holes injected through the anode and the cathode, respectively.

On the other hand, such an organic EL device requires a low-energy, low-temperature deposition process due to the characteristics of the material, and a face target sputtering (FTS) method that separates the plasma generation region and the thin film deposition region in a high energy state is used. ought.

That is, as shown in FIG. 1, a pair of targets 110a and 110b facing each other in parallel with each other in a predetermined space (electron confinement space) 120 and perpendicular to surfaces of the targets 110a and 110b are shown. Targets 110a and 110b, including magnetic field generating means 130a and 130b for generating a magnetic field in the direction and shielding portions 140a and 140b disposed to cover portions other than the opposing surfaces of the targets 110a and 110b. ) And the high energy electrons emitted when the power is applied between the shields 140a and 140b are bound to the space between the targets 110a and 110b, and are functional organic layer substrates 150 (hereinafter referred to as 'substrates') using neutral particles. Thin film is deposited.

However, the opposite target sputtering method as described above requires a relatively high driving voltage to obtain light emission of the same or similar luminance as that of the organic EL device manufactured by the conventional vacuum deposition method, resulting in deterioration of characteristics of the substrate 150. There was a problem.

In addition, at least a pair of targets (110a, 110b) for the thin film deposition has a problem that it is inevitable to increase the installation space and cost accordingly.

Furthermore, the thin film cannot be deposited while moving the targets 110a and 110b because the high energy electrons must be confined to the confined spaces between the targets 110a and 110b. Therefore, since the thin film must be deposited while moving the substrate 150 while the targets 110a and 110b are fixed, it is difficult to put the substrate 150 in place, and there is a problem that the facility itself becomes large. .

Accordingly, the present invention solves the problems described above, in the deposition of a thin film on a substrate requiring low-temperature low-temperature coating, even by a low driving voltage and simple configuration, to prevent damage to the substrate due to high energy ion collision In addition, to provide a low energy thin film deposition apparatus capable of selectively depositing only low-energy neutral particles to prevent particles from being deposited.

To this end, the low-energy thin film deposition apparatus according to the present invention, in the thin film deposition apparatus for depositing a thin film on the substrate using sputtering, the progress path for the neutral particles emitted from the target during the sputtering to reach the substrate to be deposited The target is thinned so that the horizontal axis of the target parallel to the surface of the target from which the neutral particles are emitted is inclined at a predetermined angle with respect to the horizontal axis of the substrate parallel to the bottom surface of the table on which the substrate is supported. It is characterized by being provided so that a predetermined distance may be spaced from directly above the deposition point.

However, in order to improve the deposition rate, it is preferable that at least one or more sputtering units are installed.

In addition, it is preferable to include a drive unit for transmitting power to the sputtering unit to move the target and to deposit a thin film on the substrate.

In the above configuration, an embodiment of the present invention is characterized in that the shield is provided on the lower portion of the target, the shield is formed with a slit on the traveling path of the neutral particles emitted in the vertical direction of the target surface. It is done.

At this time, the frame for supporting the shield, it is preferable that the sputtering region of the target and the thin film deposition region of the substrate, it is preferably made of a box shape equipped with a fixing portion for fixing the shield on the lower open surface.

In addition, at least one magnetic field generating unit below the target to guide the ions and electrons to one side of the shield where the slit is not formed so that high energy ions and electrons emitted during sputtering are not deposited on the substrate. It is preferable that it is done.

In addition, it is preferable that a dummy substrate is provided on one side of the shield in which the ions and electrons are induced so as to prevent deposition of the ions and electrons on the shield.

In addition, the magnetic field generating unit may further include a blocking pack covering the magnetic field generating unit so as to prevent deposition of the ions and electrons.

Another embodiment of the present invention is characterized in that a prevention plate is attached to the lower end of the sputtering unit where the target is installed to prevent particles emitted from the target from falling onto the substrate.

In this case, it is preferable that a magnetic field generating unit is provided under the barrier plate so that high energy ions and electrons emitted from the target can be guided to the barrier plate.

In addition, it is preferable that a dummy substrate is provided on an upper surface of the barrier plate to prevent deposition of the ions and electrons on the barrier plate.

Further, another embodiment of the present invention is coupled to the sputtering unit is equipped with the target so that one end is wrapped around the surface of the target, the tube is formed in the opening path of the neutral particles emitted in the vertical direction of the target surface It characterized in that it comprises an elbow of the shape.

At this time, it is preferable that at least one magnetic field generating unit is provided on the outside of the elbow so that ions emitted from the target can be guided to the other end of the elbow.

In addition, the other end of the elbow is preferably equipped with a removable dummy substrate.

Hereinafter, a preferred embodiment of a low energy thin film deposition apparatus according to the present invention will be described with reference to the accompanying drawings.

2 is a block diagram illustrating a low energy thin film deposition apparatus according to an embodiment of the present invention, Figure 3 is a block diagram for explaining a shield of a low energy thin film deposition apparatus according to an embodiment of the present invention.

As shown, the low-energy thin film deposition apparatus according to the present invention, the vacuum chamber 210 to provide a predetermined pressure and temperature largely thin film deposition, and to fix the target 230 in the vacuum chamber 210 and A sputtering unit including a target holder 221 to support the shield, a shield 241 having a slit 241a formed on one side of the sputtering unit at a predetermined distance from the lower side of the target 230, and the shield 241. A magnetic field generating unit including a support frame 242 supporting the support frame, a solenoid 243 and 244 installed under the target 230, a driving unit (not shown) for transmitting power, and a substrate 250. And a table 251 or the like.

In this configuration, the vacuum chamber 210, the reaction gas inlet 211 for injecting the sputtering gas, such as argon (Ar), and the like to make a thin film deposition under a predetermined temperature and pressure, and the inside to make a vacuum state Or a reaction gas outlet 212 connected with a vacuum pump, and a heating block (not shown) to allow the introduced reaction gas to flow out.

In this case, the reaction gas may be supplied while diffusing into the entire vacuum chamber 210 through the reaction gas inlet 211, but is led out through the reaction gas inlet 211 to the plasma generation region around the target 230. It is preferable to be supplied through the gas injection pipe 213.

The sputtering part is intended to release the thin film material by the momentum exchange by colliding the accelerated particles with the target surface, and is configured to include a target holder 221, a permanent magnet 222, and the like.

In this configuration, the target holder 221 for fixing and supporting the target 230 is installed to be inclined at a predetermined angle with respect to the substrate 250 on the upper side of the substrate 250, the target holder 221 The fixed target 230 is also inclined at an angle with respect to the substrate 250. That is, the horizontal axis of the substrate 250 parallel to the bottom surface of the table 251 on which the substrate 250 is supported with respect to the horizontal axis of the target 230 parallel to the surface of the target 230 from which the neutral particles are emitted is a predetermined angle. Tilt to In addition, the target holder 221 is arranged to be spaced a predetermined distance from directly above the thin film deposition point.

Therefore, the path of the neutral particles emitted from the target 230 during sputtering is increased to allow the neutral particles to be deposited on the substrate 250 at a lower temperature and a lower energy state.

However, the target holder 221 is coupled and supported by the hinge 223, so that the user can arbitrarily adjust the angle, and then fix it by screwing or the like, and the target holder 221 on which the target 230 is placed. On one side of the) is formed a fixing groove (not shown) for fixing the pointer (pointer) such as an infrared light emitting diode so as to emit infrared light in the same direction as the traveling direction of the neutral particles emitted from the target 230, the angle adjustment Afterwards, the pointer may be installed to predict the progress path of the neutral particles emitted from the target 230.

On the other hand, the permanent magnet 222 provided on the back of the target holder 221 is to enable the movement of electrons in the plasma, and to improve the deposition uniformity through an appropriate arrangement, such a permanent magnet 222 is Since it is a known technology, a detailed description thereof will be omitted.

The shield 241 is for preventing the high energy of electrons and ions emitted from the target 230, as well as particles such as particles that inhibit the uniformity of the thin film, do not reach the substrate 250. That is, the slits 241a are formed on a path where the neutral particles emitted in the vertical direction of the surface of the target 230 travel toward the substrate 250, so that only low-energy neutral particles pass through the slits 241a. The thin film is deposited to reach the substrate 252. In this case, the thin film is deposited according to a pattern of a mask 250 provided on the substrate 252.

The support frame 242 is for fixing and supporting the shield 241 and separating the sputtering region of the target 230 and the thin film deposition region of the substrate 250. Therefore, when the shield 241 is mounted below the support frame 242, the substrate 250 is exposed to the target 230 only through the slit 241a.

The magnetic field generating unit is installed under the target 230 to prevent high energy ions and electrons emitted during sputtering from colliding with the substrate 250. The solenoids 243 and 244 and the power supply unit (not shown) It is configured to include. Accordingly, when power is applied to the solenoids 243 and 244 through the power supply unit, a magnetic field may be generated to induce ions or electrons to one side of the shield 241 in which the slit 241a is not formed.

For example, one solenoid 244 is fixed by a rod of non-conductive material on one side of the shield 241 in which the slit 241a is not formed, and the other solenoid 233 is fixed to the target holder ( As the power is applied after being fixed to 221, ions and electrons can be induced to one side of the shield 241 as described above.

However, the magnetic field generating unit may induce the ions and electrons by the solenoid 234 installed at the final induction point of the ions and electrons, but if necessary, two or more solenoids are used to induce the ions and the electrons. It would be obvious.

In this configuration, a detachable dummy substrate 245 is provided on one side of the shield 241 on which ions and electrons are induced to prevent the shield 241 from being contaminated by the ions and electrons, and if necessary, the dummy. It is desirable to be able to replace only the substrate 245.

In addition, a blocking pack (not shown) may be further included to prevent deposition of ions and electrons on the magnetic field generating part including the solenoids 243 and 244, and it is preferable to replace only the blocking pack if necessary. Do.

As a result, ions or electrons emitted from the target 230 and particles freely falling in the direction of gravity action among the neutral particles and particles are shielded by the vertically shield 241 to prevent the substrate 250 from reaching the substrate 250. The high energy ions or electrons are guided by the magnetic force lines generated from the magnetic field generating unit to prevent the slits 241a from being formed on one side of the shield 241, thereby preventing them from reaching the substrate 250. In addition, only low-energy neutral particles emitted in the vertical direction of the target 230 surface but not affected by the magnetic lines of force are deposited on the substrate 250 through the slit 241a.

The driving unit is installed on the upper portion of the vacuum chamber 210, and the target holder 221 and the support frame 242 mounted on the guide rail 214a in which the moving groove 214b is formed can be simultaneously moved. In addition, the target 230 may be reciprocated in a scanning manner on the upper portion of the substrate 250 in the stationary state, and as the thin film is deposited, the alignment problem of the substrate 250 may be prevented from occurring.

In addition, the table 251 allows the substrate 250 to be introduced and removed, as well as to allow the substrate 250 to be fixed at the time of thin film deposition, and a non-contact permanent device for transferring the substrate 250 thereon. A jig for fixing the magnetic roller and the substrate 250 is provided.

Hereinafter, a low energy thin film deposition apparatus according to another embodiment of the present invention will be described with reference to the accompanying drawings. However, hereinafter, the same reference numerals are used for the same parts as those described in the embodiment of the present invention, and redundant description thereof will be omitted.

Figure 4 is a block diagram for explaining a low energy thin film deposition apparatus according to another embodiment of the present invention.

As shown, the low-energy thin film deposition apparatus according to another embodiment of the present invention, a sputtering unit having a vacuum chamber 210, a target holder 221 and the like, and is provided on one side of the target holder 221 A magnetic field generating unit including a prevention plate 340 and a solenoid 346 installed under the prevention plate 340, a driving unit (not shown) for transmitting power, and a table 251 for supporting the substrate 250. ) And the like.

In this configuration, the vacuum chamber 210 has a reaction gas inlet 211 for injecting a sputtering gas and a reaction gas outlet connected to a vacuum pump so as to vacuum the inside or outflow of the introduced reaction gas ( 212), and a heating block not shown.

The sputtering part is intended to release the thin film material by the momentum exchange by colliding the accelerated particles with the target surface, and is configured to include a target holder 221, a permanent magnet 222, and the like.

Here, the target holder 221 is installed so as to be inclined at a predetermined angle with respect to the substrate 250 from the upper side of the substrate 250, it is fixed to the target holder 221 as described in the embodiment of the present invention The horizontal axis of the substrate 250 is inclined at a predetermined angle with respect to the horizontal axis of the target 230. In addition, the target 230 is arranged to be spaced apart a predetermined distance from directly above the thin film deposition point of the substrate 250.

Therefore, the path of the neutral particles emitted from the target 230 during sputtering is increased to allow the neutral particles to be deposited on the substrate 250 at a lower temperature and a lower energy state.

However, the target holder 221 is coupled and supported by the hinge 223, so that the user can arbitrarily adjust the angle, the fixing groove (not shown) to which the pointer can be fixed to one side of the target holder 221 ) To predict the progress path of the neutral particles emitted from the target 230.

Permanent magnet 222 is provided on the back of the target holder 221 to enable the magnetic field is applied perpendicular to the target 230 to activate the movement of electrons in the plasma, and to improve the deposition uniformity through a proper arrangement It is for.

The prevention plate 340 is for preventing particles, ions, and electrons from being deposited on the substrate 250. The support plate 341, which has one end coupled to the target holder 221, and a receiving plate that accommodates particles, ions, and electrons. 342.

However, the other end of the support plate 341 and one end of the receiving plate 342 are coupled to each other by a hinge 343, even if the target holder 221 is inclined at various angles, the user has leveled the receiving plate 342 and then screwed. It is desirable to be able to maintain the horizontal state by tightening or the like.

In addition, the accommodation plate 342 accommodates the vertical projection area of the target 230 inclined at a predetermined angle so that the area of the accommodation plate 342 coincides with each other to prevent particles from falling on the substrate 250. It is preferable that the sliding groove 344 that can adjust the length of the plate 342 is formed.

The magnetic field generating unit is installed under the prevention plate 340 to prevent high energy ions and electrons emitted during sputtering from colliding with the substrate 250. The magnetic field generating unit includes a solenoid 346 and a power supply unit. Generating a magnetic field by applying power to the solenoid 346 allows the ions and electrons to be guided to the receiving plate 342.

In this case, the solenoid 346 is preferably configured to be coupled to the lower portion of the receiving plate 342 by a rod of a non-conductive material to move integrally with the receiving plate 342.

In addition, it is preferable that the dummy substrate 345 is provided on the upper surface of the receiving plate 342 to prevent ions and electrons from being deposited to contaminate the receiving plate 342. That is, it may be desirable to replace only the dummy substrate 345 when necessary.

According to the preventive plate 340 and the magnetic field generating unit as described above, the particles freely falling in the direction of gravity action among the ions or electrons emitted from the target 230 and the neutral particles and particles are vertically received in the receiving plate 342. Shielded by ions, ions and electrons are guided by the magnetic field lines generated from the magnetic field generating portion to the receiving plate 342. Therefore, only low-energy neutral particles, which are emitted in the vertical direction of the target 230 surface but are not affected by the lines of magnetic force, may reach the substrate 250, and a thin film is deposited according to the pattern of the mask 252.

On the other hand, the driving unit is installed on the upper portion of the vacuum chamber 210, to move the sputtering unit mounted on the guide rail 214a in which the moving groove 214b is formed, the target 230 in a scanning manner By reciprocating and depositing a thin film, alignment problems of the substrate 250 may be prevented from occurring.

In addition, the table 251 allows the substrate 250 to be pulled in and drawn out, as well as to fix the substrate 250 at the time of thin film deposition. The non-contact permanent part for transferring the substrate 250 thereon. A magnet roller and a jig for fixing the substrate 250 are provided.

Hereinafter, a low energy thin film deposition apparatus according to another embodiment of the present invention will be described with reference to the accompanying drawings.

5 is a block diagram illustrating a low energy thin film deposition apparatus according to another embodiment of the present invention.

As shown, the low-energy thin film deposition apparatus according to another embodiment of the present invention, the sputtering unit having a vacuum chamber 210, a target holder 221 for fixing and supporting the target 230, and the A magnetic field generating unit having an elbow 440 mounted on one side of the target holder 221, a solenoid 441 and 442 arranged to surround the outer circumferential surface of the elbow 440, a driving unit for transmitting power, and a substrate. The table 251 etc. which support the 250 are comprised.

In this configuration, the vacuum chamber 210 is a reaction gas inlet 211 and a reaction gas outlet 212 connected with a vacuum pump to vacuum the inside or outflow of the introduced reaction gas, and not shown Non-heating block and the like.

The sputtering part is for discharging the thin film material by the momentum exchange by colliding the accelerated particles with the target surface, and includes a target holder 221, a permanent magnet 222, and the like.

The target holder 221 is inclined at a predetermined angle with respect to the substrate 250 on the upper side of the substrate 250, so that the horizontal axis of the target 230 and the horizontal axis of the substrate 250 fixed to the target holder 221 The device is inclined at a predetermined angle and spaced a predetermined distance from directly above the thin film deposition point.

However, the target holder 221 is coupled and supported by the hinge 223, so that the user can arbitrarily adjust the angle, the fixing groove (not shown) to which the pointer can be fixed to one side of the target holder 221 ) Is preferably formed.

The elbow 440 is to prevent particles, ions, and electrons from being deposited on the substrate 250. The one end of the pipe-shaped elbow 440 surrounds the sputtering region of the target 230. 221 is coupled to the other end is made of a shape blocked by the removable dummy substrate 443, the opening of the neutral particles are discharged in the vertical direction of the target 230 surface is formed with an opening (440a) Only the substrate 250 is configured to be reached.

Here, the dummy substrate 443 is a thin film by removing the dummy substrate 443 and mounting a new dummy substrate when particles, electrons, and ions are deposited on the dummy substrate 443 due to frequent use of the device. It is configured to perform the deposition.

The magnetic field generating unit is provided to surround the outer circumferential surface of the elbow 440 to prevent the high energy ions or electrons emitted during sputtering from colliding with the substrate 250. The magnetic field generating unit includes solenoids 441 and 442 and a power supply unit. That is, when a magnetic field is generated by applying power to the solenoids 441 and 442 from the power supply unit, the ions or electrons may be induced to the dummy substrate 443 attached to the lower end of the elbow 440.

According to the elbow 440 and the magnetic field generating unit as described above, ions or electrons emitted from the target 230 and particles freely falling in the gravity action direction among the neutral particles and particles are placed on the dummy substrate 443 vertically downward. Shielded by the high energy ions and electrons are led to the dummy substrate 443 by the magnetic force lines generated from the solenoids 441 and 442. Therefore, only the low-energy neutral particles, which are emitted in the vertical direction of the surface of the target 230 and are not affected by the lines of magnetic force, reach the substrate 250, and a thin film is deposited according to the pattern of the mask 252.

On the other hand, the driving unit is installed on the upper portion of the vacuum chamber 210, to move the sputtering unit mounted on the guide rail 214a in which the moving groove 214b is formed, and the table 251 is the substrate 250 ) Is to allow the substrate 250 to be fixed at the time of thin film deposition, as well as to fix the non-contact permanent magnet roller and the substrate 250 to transfer the substrate 250 thereon. Jig and the like are provided.

Hereinafter, a plurality of low-energy thin film deposition apparatuses according to the preferred embodiments of the present invention as described above will be described in the configuration to increase the thin film deposition rate by a plurality of devices in one vacuum chamber.

However, hereinafter, a schematic configuration showing only a substrate and a target will be described as an example, but it will be apparent to those skilled in the art that such a configuration can be applied to all the low energy thin film deposition apparatuses of the present invention described with reference to FIGS. 2 to 5.

6 is a schematic view for explaining a configuration in which a plurality of low-energy thin film deposition apparatuses according to the present invention are arranged.

As shown, the low-energy thin film deposition apparatus according to the present invention may be used by placing a plurality of low-energy thin film deposition apparatus of various embodiments as described with reference to Figures 2 to 5 to increase the deposition rate.

That is, as shown in (a) of FIG. 6, the plurality of targets 230 are arranged in a line on the substrate 250, but the plurality of targets 230 may simultaneously reciprocate by a driving unit. As the configuration, it is possible to improve the thin film deposition rate.

In addition, as shown in FIG. 6B, the plurality of targets 230 are arranged in a zigzag shape on the substrate 250, but the plurality of targets 230 may simultaneously reciprocate by a driving unit. By configuring the thin film deposition rate can be improved. However, in this case, unlike the above-described FIG. 6 (a), the deposition speed of the center of the substrate 250 in which the reciprocating paths of the targets 230 overlap is particularly improved.

On the other hand, as described above, when the plurality of targets 230 are disposed to deposit a thin film, the solenoids 243, 244/346/441, 442 installed in each device are spaced apart by a predetermined distance or more so as not to influence each other. It is desirable to have.

The low energy thin film deposition apparatus according to the present invention has been described above. Such a technical configuration of the present invention will be understood by those skilled in the art that the present invention can be implemented in other specific forms without changing the technical spirit or essential features of the present invention.

Therefore, the above-described embodiments are to be understood in all respects as illustrative and not restrictive, and the scope of the present invention is indicated by the appended claims rather than the foregoing description, and the meanings of the claims and All changes or modifications derived from the scope and equivalent concepts thereof should be construed as being included in the scope of the present invention.

According to the low-energy thin film deposition apparatus according to the present invention as described above, in depositing a thin film on a substrate requiring a low temperature and low energy coating, it is possible to deposit a low temperature and low energy thin film using a single target to lower the driving voltage. Not only that, but also its configuration can be simplified.

In addition, it is possible to prevent the deposition of high-energy ions and particles, and to selectively deposit only low-energy neutral particles, thereby preventing damage to the substrate and improving the characteristics of the deposited thin film.

Claims (14)

In the thin film deposition apparatus for depositing a thin film on a substrate using sputtering, The bottom of the table is supported by a horizontal axis of the target parallel to the surface of the target from which the neutral particles are released, so that the sputtering path of the neutral particles emitted from the target to reach the substrate to be deposited is increased. And the target is inclined at a predetermined angle with respect to a horizontal axis of the substrate parallel to the surface, and the target is spaced apart from the upper portion of the substrate thin film deposition point by a predetermined distance. The method of claim 1, Low-energy thin film deposition apparatus, characterized in that at least one or more sputtering unit is equipped with the target to improve the deposition rate. The method of claim 2, Low energy thin film deposition apparatus comprising a drive unit for transmitting power to the sputtering unit to move the target and to deposit a thin film on the substrate. The method according to any one of claims 1 to 3, The lower portion of the target is equipped with a shield, the shield is a low-energy thin film deposition apparatus, characterized in that the slit is formed on the traveling path of the neutral particles emitted in the vertical direction of the target surface. The method of claim 4, wherein The frame for supporting the shield has a low-energy thin film deposition, characterized in that the box is formed with a fixing portion for fixing the shield on the lower open surface so as to separate the sputtering region of the target and the thin film deposition region of the substrate. Device. The method of claim 4, wherein At least one magnetic field generating unit is provided below the target to guide the ions and electrons to one side of the shield on which the slit is not formed so that high energy ions and electrons emitted during sputtering are not deposited on the substrate. Low energy thin film deposition apparatus, characterized in that. The method of claim 6, A low-energy thin film deposition apparatus, characterized in that the dummy substrate is provided on one side of the shield to guide the ions and electrons to prevent the deposition of the ions and electrons on the shield. The method of claim 6, And a blocking pack covering the magnetic field generating unit to prevent the ions and the electrons from being deposited on the magnetic field generating unit. The method according to any one of claims 1 to 3, A lower energy thin film deposition apparatus, characterized in that the prevention plate is attached to the lower end of the sputtering unit is installed to prevent the particles emitted from the target falling to the substrate. The method of claim 9, The lower energy thin film deposition apparatus of the lower plate is characterized in that the magnetic field generating unit is installed so that high energy ions and electrons emitted from the target can be guided to the blocking plate. The method of claim 10, Low-energy thin film deposition apparatus, characterized in that the dummy substrate is provided on the upper side of the barrier plate to prevent the deposition of the ions and electrons on the barrier plate. The method according to any one of claims 1 to 3, One end is coupled to the sputtering unit in which the target is installed to surround the surface of the target, and a pipe-shaped elbow having an opening formed on a path of the neutral particles emitted in the vertical direction of the target surface. Low energy thin film deposition apparatus comprising a. The method of claim 12, At least one magnetic field generator is provided on the outside of the elbow so that the ions emitted from the target can be guided to the other end of the elbow. The method of claim 13, The other end of the elbow is a low energy thin film deposition apparatus, characterized in that the detachable dummy substrate is provided.

Images