KR100710206B1 - Apparatus for Deposition of Thin Film layer in Semiconductor Device and Method for Deposition of the Same - Google Patents

Abstract

The present invention relates to a thin film deposition apparatus of a semiconductor device and a thin film deposition method thereof that can be used for recycling by recycling an expensive precursor (precursor), the thin film deposition equipment of the semiconductor device of the present invention is equipped with a substrate A chamber, a precursor storage unit for storing a precursor, a carrier gas supply unit for supplying a carrier gas for moving the precursor in the chamber, a recycle unit for storing a precursor which does not enter a chamber among precursors from the precursor storage unit; And a gas supply unit supplying a gas for inducing residue discharge after atomic layer deposition on the substrate in the chamber, and a pump to assist the evacuation of the chamber.

Precursor, Atom Layer Deposition (ALD), Metal Barrier, Recycling

Description

Apparatus for Deposition of Thin Film layer in Semiconductor Device and Method for Deposition of the Same}

1 is a process schematic diagram showing a thin film deposition apparatus of a conventional semiconductor device

2 is a process schematic diagram showing a thin film deposition apparatus of a semiconductor device of the present invention

3 is a cross-sectional view showing a metal barrier of a semiconductor device formed by using the thin film deposition apparatus of the semiconductor device of the present invention.

4 is a schematic view showing the interior of the chamber of FIG.

* Description of symbols on the main parts of the drawings *

100 carrier gas supply unit 110 chamber

120: recycling unit 130: precursor storage unit

140: gas supply unit 150: pump

111 ~ 115: Supply pipe 116, 117: Exhaust pipe

121 to 126: valve 200: substrate

210: insulating film 220: metal barrier

230: contact hole

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly, to a thin film deposition apparatus of a semiconductor device and a method of thin film deposition thereof, which can be reused by recycling expensive precursors.

As semiconductor circuits become highly integrated, improvements in existing thin film deposition processes are required. In particular, metal barrier films used in contacts, vias, trenches, and the like, which are well known in the art, have a smaller contact hole, that is, the width of the contact hole. As the aspect ratio increases, better step coverage is required.

In addition, the control of the deposition thickness by adjusting the deposition rate (deposition rate) also requires a new process that can be reproducibly deposited within the error of Å unit.

Since the Ti / TiN (or Ti / WN) film, which is commonly used as the metal barrier film, is formed by a sputtering method, which is a physical vapor deposition (PVD), the step coverage problem cannot be solved. Thickness control is also difficult. In addition, when the Ti film is formed by chemical vapor deposition (CVD), which is superior to the sputtering in terms of step coverage, a disadvantage of using plasma chemical vapor deposition (CVD) and the chemical vapor deposition method is known as TiN. When (WN) is formed, a problem of containing Cl (F) impurities occurs.

In this case, in order to solve the impurity containing problem, the temperature of forming the WN film should be increased to 650 ° C. or higher, and problems such as thermal budget, maintenance of equipment, particles, and the like occur. In addition, the plasma chemical vapor deposition is disadvantageous in terms of step coverage compared to thermal chemical vapor deposition (Thermal CVD).

 Therefore, a process capable of overcoming the above problems is essential for high integration of the device.

In order to solve the above problems, Atomic Layer Deposition (ALD) has recently emerged due to the formation of the metal barrier.

The atomic layer deposition (ALD) method is a deposition method using a chemical reaction such as a chemical vapor deposition (CVD) method, but each gas used is pulsed one by one without being mixed in a chamber. Inflow.

For example, in the case of forming the C film using the A gas and the B gas, first, only the A gas is introduced into the chamber to chemisorb the A gas onto the semiconductor substrate, and then the B gas is introduced to the B gas. Is chemically adsorbed on the semiconductor substrate to form the atomic layer C film.

Hereinafter, with reference to the accompanying drawings will be described a device for metal barrier deposition of a conventional semiconductor device.

1 is a process schematic diagram showing a thin film deposition apparatus of a conventional semiconductor device.

As shown in FIG. 1, a conventional thin film deposition apparatus of a semiconductor device includes a chamber 20 including a substrate on which atomic layer deposition (ALD) is formed through a precursor, and a precursor in the chamber 20. a carrier gas supply unit 10 for supplying a carrier gas for moving the precursor 31, a precursor storage unit 30 for storing and supplying the precursor 31, and a chamber 20. It comprises a gas supply unit 40 for supplying a gas for inducing residue discharge after the reaction after the atomic layer deposition and the pump 50 to help the exhaust of the chamber 20.

In addition, a first supply pipe 11 is formed between the carrier gas supply part 10 and the precursor storage part 30, and a second supply pipe 12 is disposed between the precursor storage part 30 and the chamber 20. The third supply pipe 13 is formed between the gas supply part 40 and the chamber 20.

In addition, a pump 50 that pumps to discharge the gas remaining after the metal barrier is formed on the substrate by using an atomic layer deposition method is disposed below the chamber 20.

In addition, the first exhaust pipe 14 is connected to a predetermined portion of the second supply pipe 12 to discharge the remaining precursor 31 that is not supplied into the chamber 20 from the precursor storage unit 30 to the outside. A first exhaust pipe 14 is provided. In addition, a second exhaust pipe 16 is formed between the chamber 20 and the pump 50 to discharge the residues remaining after the atomic layer deposition in the chamber 20 by the action of the pump 50. .

In addition, the first supply pipe 11 has a first valve 21 at a predetermined portion, and the second supply pipe 12 has a second valve 22 at a predetermined portion above the precursor storage portion 30. The third supply pipe 13 includes a third valve 23 and a fourth valve 24 at an intersection point of the second supply pipe 12 and the first exhaust pipe 14.

The thin film deposition of the conventional semiconductor device using the thin film deposition equipment of the semiconductor device is performed as follows.

In the thin film deposition using the atomic layer deposition method, the thin film deposition equipment is controlled by receiving a precursor supply signal from a system (located outside, not shown). That is, during atomic layer deposition the deposition equipment receives a precursor supply signal from the system, otherwise it receives a purge signal.

First, the first supply pipe 11 supplies a carrier gas from the carrier gas supply unit 10 to the precursor storage unit 30 through the first valve 21.

In addition, the second supply pipe 12 includes a second valve 22 and a fourth valve 24 at predetermined portions to move the precursor, which is not activated by itself, into the chamber 20 together with the carrier gas. Let's do it. Through this process, an atomic layer deposition (ALD) is formed on a substrate (not shown) mounted in the chamber 20. At this time, the remaining third valve 23 is closed. Here, the second valve 22 and the fourth valve 24 are in an open state.

The third valve 23 is then opened and the second valve 22 is closed for purging after deposition. At this time, the fourth valve 24 is continuously opened, and in this state, the precursor 31 continuously exits from the precursor supply part 30 to the first exhaust part 14.

As described above, when the metal barrier is formed by using a thin film deposition apparatus of a conventional semiconductor device, a by-pass line (14 in FIG. 1) which discharges the precursor 31 to the outside when purging is performed. In this case, the expensive precursor 31 can be wasted continuously during purge.

The conventional thin film deposition apparatus of the semiconductor device and the thin film deposition method thereof has the following problems.

When forming a metal barrier using a thin film deposition equipment of a conventional semiconductor device, since the precursor is sent to the bypass line to be discharged to the outside during the purge, the precursor is continuously expensive to purge You can waste it.

An object of the present invention is to provide a thin film deposition apparatus of a semiconductor device and a thin film deposition method thereof, which can be used for deposition by recycling expensive precursors.

The thin film deposition apparatus of the semiconductor device of the present invention for achieving the above object is a chamber on which the substrate is mounted, a precursor storage unit for storing the precursor, a carrier gas supply unit for supplying a carrier gas for moving the precursor in the chamber And a recycling unit for storing precursors that do not enter the chamber among the precursors from the precursor storage unit, a gas supply unit supplying a gas for inducing residue discharge after atomic layer deposition on the substrate in the chamber, and exhaust of the chamber. It is characterized by the fact that it comprises a pump to help.

The thin film deposition apparatus of the semiconductor device operates by receiving a precursor supply signal and a purge signal at regular intervals.

The precursor is supplied to the recycling unit when the purge signal is applied.

The gas supply from the gas supply unit to the chamber is made upon application of the purge signal.

In addition, the thin film deposition method of the semiconductor device of the present invention for achieving the same object, a chamber, a precursor storage unit for storing the precursor, a carrier gas supply unit for supplying a carrier gas for moving the precursor in the chamber, the precursor In the thin film deposition method using a thin film deposition apparatus of a semiconductor device comprising a recycling unit for storing the precursor that does not enter the chamber of the precursor from the storage unit and a gas supply unit for supplying the gas to induce residue discharge in the chamber Mounting a substrate in the chamber, supplying the carrier gas from the carrier gas supply to the precursor reservoir, supplying the precursor along with the carrier gas to the chamber, on the substrate After atomic layer deposition, from the gas supply to the chamber Supplying and purging a gas, storing the precursor from the precursor storage unit in the recycling unit, and simultaneously supplying a precursor to the chamber from the precursor storage unit and the recycling after the purge. There is another feature.

In the step of supplying the precursor along with the carrier gas to the chamber is cut off between the gas supply and the chamber, the precursor reservoir and the recycle portion is blocked.

After the atomic layer deposition on the substrate, the precursor supply unit and the chamber are blocked in the step of purging the gas from the gas supply unit to the chamber.

In the storing of the precursor from the precursor storage unit in the recycling unit, the recycling unit and the chamber are blocked.

In the step of simultaneously supplying a precursor to the chamber from the precursor reservoir and the recycle after the purge, the gas supply and the chamber are shut off.

Hereinafter, a thin film deposition apparatus and a thin film deposition method using the same of a semiconductor device of the present invention with reference to the accompanying drawings in detail as follows.

2 is a process schematic diagram showing a thin film deposition apparatus of a semiconductor device of the present invention.

As shown in FIG. 2, the thin film deposition apparatus of the semiconductor device of the present invention includes a chamber 110 including a substrate (200 of FIG. 3) in which atomic layer deposition (ALD) is largely formed through a precursor. A carrier gas supply unit 100 for supplying a carrier gas for moving the precursor 131 into the chamber, a recycle unit 120, and a precursor storage unit for storing and supplying the precursor 131. 130, a gas supply unit 140 for supplying a gas for inducing residue discharge after the reaction after the atomic layer deposition in the chamber, and a pump 150 for assisting the evacuation of the chamber 110.

In addition, a first supply pipe 111 is formed between the carrier gas supply unit 100 and the precursor storage unit 130, and a second supply pipe 112 is disposed between the precursor storage unit 130 and the chamber 110. Is formed, a third supply pipe 113 is formed between the gas supply unit 140 and the chamber 110, the chamber between the predetermined portion of the second supply pipe 112 and the recyclable unit 120. A fourth supply pipe 114, which is a recycle pipe for recycling the precursor not introduced into the reactor, and a fifth supply pipe 115 formed between the fourth supply pipe 114 and the recycle part 120 are formed. .

In addition, a pump 150 having a pumping function to exhaust gas remaining after forming a metal barrier deposited on the substrate 200 by using an atomic layer deposition method on the substrate 200 and the chamber. A first exhaust pipe 116 and a second exhaust pipe 117 are formed below the pump 150 between the 110 and the pump 150.

In addition, the first supply pipe 111 is provided with a first valve 121 in a predetermined portion, the second supply pipe 112 is provided with a second valve 122 in a predetermined portion, and the third supply pipe 113 ) Includes a third valve 123, a fourth valve 124 at a predetermined portion of the fourth supply pipe 124 adjacent to the second supply pipe 112, and the fourth supply pipe 114. The fifth valve 125 is provided between the fifth supply pipes 115.

A first exhaust pipe 116 is formed between the chamber 110 and the pump 150, and a second exhaust pipe 117 is formed below the pump 150 to remain after the reaction in the chamber 110. Drain the residue to the outside.

Thin film deposition using the thin film deposition equipment of the semiconductor device is performed as follows.

In the thin film deposition using the atomic layer deposition method, the thin film deposition equipment is controlled by receiving a precursor supply signal from a system (located outside, not shown). That is, during atomic layer deposition, the thin film deposition apparatus of the present invention receives a precursor supply signal from a system, otherwise receives a purge signal, and the fourth valve 124 that enters the recycle part 120 at the purge signal. ) And the fifth valve 125 are opened to allow the precursor 131 to enter the recycling unit 120 side rather than the chamber 110 side. In this case, the sixth valve 126 is in a locked state.

First, the first supply pipe 111 is provided with a first valve 121 at a predetermined portion to supply a carrier gas to the precursor storage unit 130.

In addition, the second supply pipe 112 includes a second valve 122 and a sixth valve 126 at predetermined portions to move the precursor, which is not activated by itself, into the chamber 110 together with the carrier gas. Let's do it. Through this process, an atomic layer deposition (ALD) is performed on the metal barrier on the substrate 200 mounted in the chamber 110. At this time, the remaining third to fifth valves 123 to 125 are locked.

Subsequently, the third valve 123 is opened and the second valve 122 is closed for purging after deposition. At this time, the fourth valve 124 and the fifth valve 125 are opened to recycle the precursor to the recycle unit 120.

Subsequently, the precursor 131 is supplied to the substrate 200 in the chamber 120 for atomic layer deposition (ALD). In this case, the third valve 123 and the fourth valve 124 are locked, and the remaining valves are opened to supply the precursor storage unit 130 and the new precursor and the recycled precursor from the recycle unit 120 together. .

In this case, the precursor is simultaneously supplied from the precursor storage unit 130 and the recycling unit 120 to the chamber 110, thereby enabling atomic layer deposition on the substrate 200 in the chamber 110 in a short time.

In addition, it is possible to reduce the cost of precursor use by reusing the precursor that is sent out of the chamber in the first deposition without consuming expensive precursors.

In this case, although not shown, the precursor storage unit 130 is separately controlled to control the supply amount of the precursor from the outside to control the supply amount of the precursor used for atomic layer deposition without recycling and the precursor supply amount after recycling. do. After recycling, the precursor supply amount may be smaller than the precursor supply amount used for atomic layer deposition without recycling, or the supply time may be shortened so that the amount of precursor finally supplied to the chamber 110 is constant.

Hereinafter, a metal barrier formed by atomic layer deposition using the above-described thin film deposition apparatus of the semiconductor device of the present invention will be described.

The metal barrier is formed on the contact hole sidewalls and the bottom surface, and is formed to reduce contact resistance with the plug material filled in the contact hole and the metal wiring formed thereon.

3 is a cross-sectional view illustrating a metal barrier of a semiconductor device formed using the thin film deposition apparatus of the semiconductor device of the present invention.

As illustrated in FIG. 3, an insulating film 210 is deposited on the substrate 200.

Subsequently, the insulating layer 210 is selectively removed to form a contact hole 230.

Subsequently, a metal barrier 220 is deposited in the contact hole 230. In this case, atomic layer deposition is performed on the surface including the contact hole 230 in the substrate 200 (the bottom and sidewalls of the contact hole and the upper part of the insulating layer around the contact hole) using the equipment shown in FIG. 2. .

4 is a schematic view showing the inside of the chamber of FIG.

As shown in FIG. 4, a fourth supply pipe 114 connected to the second supply pipe 112 and the recycle part 120 of FIG. 2 is formed on the chamber 110 to form a precursor 131 in the chamber 110. Is supplied, and the third supply pipe 113 is formed to discharge the remaining material remaining after the atomic layer deposition by the precursor 131 to the outside of the chamber 110, and supplies a gas to assist the discharge. Here, the fourth supply pipe 114 is first supplied to the precursor 131 to the chamber 110 through the second supply pipe 112, and then the precursor stored from the recycle part 120 is supplied from the deposition process. Lose.

The substrate 200 is mounted on a stage provided in the chamber 110. Whether the precursor 131 is supplied from the second supply pipe 112 and the fourth supply pipe 114 or the gas 113 assisting the discharge from the third supply pipe 113 is supplied to the chamber 110. Thus, the gas or material acts on the lower side of the substrate 200 or the chamber 110.

On the other hand, the metal barrier component of the atomic layer deposition described in the present invention may be any one of Ti, TiN, Ta, TaN, TiSN, TaSiN, in addition, may be a metal or metal alloy used to reduce the contact resistance There will be. At this time, the precursor (precursor) used as the material of the metal barrier is not a material consisting of atoms of the metal, but a precursor thereof, that is, an initial material that induces an atomic layer deposition reaction, between the atomic layer deposited material and several chemical molecules Reactant. For example, when forming an atomic layer TiN film, it will be TiCl4.

In addition, the gas supplied from the carrier gas supply unit 100 of FIG. 2 is an inert gas such as Ar.

In addition, the gas supplied from the gas supply unit 140 to assist in discharging the remaining residue after deposition in the chamber 110 of FIG. 2 may be H2, N2, NH3.

Meanwhile, using the same equipment, a copper thin film may be further formed on top of a Ti, TiN, Ta, TaN film, etc. as a metal barrier, and in this case, the copper precursor Cu (HFAC) 2 (HFAC: Hexafluoacethyl Acetonate) as the precursor. ), (HFAC) Cu (COD), (HFAC) (Cu) ATMS) and the like may be used as precursors.

On the other hand, the present invention described above is not limited to the above-described embodiment and the accompanying drawings, it is possible that various substitutions, modifications and changes within the scope without departing from the technical spirit of the present invention. It will be apparent to those of ordinary skill in Esau.

The thin film deposition apparatus and the thin film deposition method of the semiconductor device of the present invention as described above has the following effects.

The thin film deposition apparatus of the semiconductor device of the present invention forms a bypass supply pipe from which the precursor escapes during purge as a circulating pipe returning back to the chamber side, and connects the circulating pipe with a separate recycle part to provide a precursor that escapes during purge. Stored in the recycle section and use it for the next atomic layer deposition.

Therefore, the required amount of the precursor used for atomic layer deposition can be reduced by the provision of the recycle portion, which can prevent expensive precursor consumption and thus increase productivity.

Claims (9)

A chamber on which a substrate is mounted; A precursor storage unit for storing the precursor; A carrier gas supply unit supplying a carrier gas for moving the precursor in the chamber; Recycling unit for storing the precursor that does not enter the chamber of the precursor from the precursor storage unit; A gas supply unit supplying a gas for inducing residue discharge after atomic layer deposition on the substrate in the chamber; And Thin film deposition equipment of a semiconductor device, characterized in that comprises a pump to help the exhaust of the chamber. The method of claim 1, The thin film deposition apparatus of the semiconductor device is a thin film deposition equipment of a semiconductor device, characterized in that the operation of receiving a precursor supply signal and a purge (purge) at regular intervals. The method of claim 2, And depositing the precursor to the recycling unit when the purge signal is applied. The method of claim 1, The gas supply unit from the gas supply unit to the chamber is a vapor deposition equipment of the semiconductor element, characterized in that when the purge signal is applied. A chamber, a precursor storage unit for storing a precursor, a carrier gas supply unit for supplying a carrier gas for moving the precursor in the chamber, a recycle unit for storing a precursor which does not enter a chamber among precursors from the precursor storage unit; In the thin film deposition method using a thin film deposition apparatus of a semiconductor device comprising a gas supply unit for supplying a gas for inducing residue discharge in the chamber, Mounting a substrate in the chamber; Supplying the carrier gas from the carrier gas supply to the precursor reservoir; Supplying the precursor with the carrier gas to the chamber; After the atomic layer deposition on the substrate, supplying a gas to the chamber from the gas supply unit to purge; Storing the precursor from the precursor storage unit in the recycling unit; And And simultaneously supplying a precursor to the chamber from the precursor storage unit and the recycling after the purge. The method of claim 5, And in the step of supplying the precursor together with the carrier gas to the chamber, the gas supply unit and the chamber are blocked, and the precursor storage unit and the recycling unit are blocked. The method of claim 5, And depositing the gas from the gas supply part to the chamber after purging the atomic layer on the substrate, the precursor supply part and the chamber are blocked. The method of claim 5, And storing the precursor from the precursor storage part in the recycling part, wherein the recycling part and the chamber are blocked. The method of claim 5, And the gas supply unit and the chamber are blocked in the step of simultaneously supplying a precursor to the chamber from the precursor storage unit and the recycling after the purge.

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