KR100719282B1 - 탑 뷰 및 사이드 뷰 공용 발광 다이오드 - Google Patents
탑 뷰 및 사이드 뷰 공용 발광 다이오드 Download PDFInfo
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- KR100719282B1 KR100719282B1 KR1020050126473A KR20050126473A KR100719282B1 KR 100719282 B1 KR100719282 B1 KR 100719282B1 KR 1020050126473 A KR1020050126473 A KR 1020050126473A KR 20050126473 A KR20050126473 A KR 20050126473A KR 100719282 B1 KR100719282 B1 KR 100719282B1
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- 239000000758 substrate Substances 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000000465 moulding Methods 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000012356 Product development Methods 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (10)
- 발광 다이오드 에 있어서,기판;상기 기판 상에 소정 간격으로 이격되어 형성된 제1 리드와 제2 리드 및상기 제1 및 제2 리드 중 어느 한 리드 상에 실장되는 발광 다이오드 칩을 포함하며, 상기 제1 리드와 제2 리드는 상기 기판의 동일한 일 측면 및 배면 상으로 연장되어 형성되는 것을 특징으로 하는 발광 다이오드.
- 제1항에 있어서,상기 발광 다이오드 칩을 봉지하는 몰딩부를 더 포함하는 것을 특징으로 하는 발광 다이오드.
- 제1항 또는 제2항에 있어서,상기 기판 상에 형성되는 반사기를 더 포함하는 것을 특징으로 하는 발광 다이오드.
- 제1항 또는 제2항에 있어서,상기 제1 리드와 제2 리드는 기판의 동일한 타 측면 상으로 연장되어 형성되는 것을 특징으로 하는 발광 다이오드.
- 제1항 또는 제2항에 있어서,상기 발광 다이오드 칩이 실장되는 리드가 더 크게 형성되는 것을 특징으로 하는 발광 다이오드.
- 발광 다이오드에 있어서,기판;상기 기판 상에 소정 간격으로 이격되어 형성된 제1 리드와 제2 리드 및상기 기판 상에 실장되는 발광 다이오드 칩을 포함하며, 상기 제1 리드와 제2 리드는 상기 기판의 동일한 일 측면 및 배면 상으로 연장되어 형성되는 것을 특징으로 하는 발광 다이오드.
- 발광 다이오드에 있어서,기판;상기 기판 상에 소정 간격으로 이격되어 형성된 다수의 제1 리드와 다수의 제2 리드; 및다수의 발광 다이오드 칩을 포함하며,상기 다수의 제1 리드와 다수의 제2 리드는 상기 기판의 동일한 일 측면 및 배면 상으로 연장되어 형성되는 것을 특징으로 하는 발광 다이오드.
- 제7항에 있어서,상기 다수의 제1 리드와 상기 제2 리드는 상기 기판의 동일한 타 측면 상으로 연장되어 형성되는 것을 특징으로 하는 발광 다이오드.
- 제7항에 있어서,상기 다수의 발광 다이오드 칩은 상기 다수의 제1 리드 및 다수의 제2 리드 중 어느 한 리드 상에 각각 실장되는 것을 특징으로 하는 발광 다이오드.
- 제7항에 있어서,상기 다수의 발광 다이오드 칩은 상기 기판 상에 실장되는 것을 특징으로 하는 발광 다이오드.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050126473A KR100719282B1 (ko) | 2005-12-20 | 2005-12-20 | 탑 뷰 및 사이드 뷰 공용 발광 다이오드 |
DE112006003435T DE112006003435B4 (de) | 2005-12-20 | 2006-12-15 | Lichtemittierende Diode in Kopfabstrahlungs- und Seitenabstrahlungsbauart |
PCT/KR2006/005499 WO2007073062A1 (en) | 2005-12-20 | 2006-12-15 | Light emitting diode for top view type and side view type |
TW95147887A TWI388069B (zh) | 2005-12-20 | 2006-12-20 | 頂視型與側視型的發光二極體 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020050126473A KR100719282B1 (ko) | 2005-12-20 | 2005-12-20 | 탑 뷰 및 사이드 뷰 공용 발광 다이오드 |
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Publication Number | Publication Date |
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KR100719282B1 true KR100719282B1 (ko) | 2007-05-17 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020050126473A KR100719282B1 (ko) | 2005-12-20 | 2005-12-20 | 탑 뷰 및 사이드 뷰 공용 발광 다이오드 |
Country Status (4)
Country | Link |
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KR (1) | KR100719282B1 (ko) |
DE (1) | DE112006003435B4 (ko) |
TW (1) | TWI388069B (ko) |
WO (1) | WO2007073062A1 (ko) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010002226A3 (ko) * | 2008-07-03 | 2010-04-22 | 삼성엘이디 주식회사 | Led 패키지 및 그 led 패키지를 포함하는 백라이트 유닛 |
WO2010137841A2 (ko) * | 2009-05-26 | 2010-12-02 | 일진반도체(주) | 발광 다이오드 패키지 및 백라이트 유닛 |
US8258526B2 (en) | 2008-07-03 | 2012-09-04 | Samsung Led Co., Ltd. | Light emitting diode package including a lead frame with a cavity |
WO2016060472A1 (ko) * | 2014-10-17 | 2016-04-21 | 서울반도체 주식회사 | 백라이트 유닛 및 사이드뷰 발광 다이오드 패키지 |
KR101678790B1 (ko) * | 2015-08-26 | 2016-11-23 | 주식회사원광전자 | 표시용 엘이디와 조도센서의 일체형 패키지 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI414096B (zh) * | 2010-01-15 | 2013-11-01 | I Chiun Precision Ind Co Ltd | High power light emitting diode bracket |
DE102013110733A1 (de) | 2013-09-27 | 2015-04-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
EP3601186B1 (en) | 2017-03-20 | 2022-01-12 | Central Glass Company, Limited | Infrared rays (ir) reflective laminated glass for a window |
EP3544066A1 (en) * | 2018-03-23 | 2019-09-25 | Excellence Opto. Inc. | High heat dissipation light emitting diode package structure having at least two light cups and lateral light emission |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20050103625A (ko) * | 2004-04-27 | 2005-11-01 | 럭스피아 주식회사 | 백라이트용 발광 다이오드 패캐지 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR940003109A (ko) * | 1992-07-31 | 1994-02-19 | 김광호 | 발광다이오드 및 그 제조방법 |
WO1999007023A1 (de) * | 1997-07-29 | 1999-02-11 | Osram Opto Semiconductors Gmbh & Co. Ohg | Optoelektronisches bauelement |
KR100421688B1 (ko) * | 1999-11-11 | 2004-03-10 | 도요다 고세이 가부시키가이샤 | 풀컬러 광원 유니트 |
JP2001210871A (ja) * | 2000-01-25 | 2001-08-03 | Sharp Corp | サイド発光型発光ダイオードおよびその製造方法、ならびにこのサイド発光型発光ダイオードを備えた携帯端末機器 |
KR100395306B1 (ko) * | 2000-04-27 | 2003-08-25 | 한국과학기술원 | 발광 다이오드 및 제조방법 |
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2005
- 2005-12-20 KR KR1020050126473A patent/KR100719282B1/ko active IP Right Grant
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2006
- 2006-12-15 WO PCT/KR2006/005499 patent/WO2007073062A1/en active Application Filing
- 2006-12-15 DE DE112006003435T patent/DE112006003435B4/de active Active
- 2006-12-20 TW TW95147887A patent/TWI388069B/zh active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20050103625A (ko) * | 2004-04-27 | 2005-11-01 | 럭스피아 주식회사 | 백라이트용 발광 다이오드 패캐지 |
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10-2005-103625 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010002226A3 (ko) * | 2008-07-03 | 2010-04-22 | 삼성엘이디 주식회사 | Led 패키지 및 그 led 패키지를 포함하는 백라이트 유닛 |
KR101101134B1 (ko) * | 2008-07-03 | 2012-01-05 | 삼성엘이디 주식회사 | Led 패키지 및 그 led 패키지를 포함하는 백라이트 유닛 |
US8258526B2 (en) | 2008-07-03 | 2012-09-04 | Samsung Led Co., Ltd. | Light emitting diode package including a lead frame with a cavity |
US9022632B2 (en) | 2008-07-03 | 2015-05-05 | Samsung Electronics Co., Ltd. | LED package and a backlight unit unit comprising said LED package |
US9594207B2 (en) | 2008-07-03 | 2017-03-14 | Samsung Electronics Co., Ltd. | LED package and a backlight unit comprising said LED package |
WO2010137841A2 (ko) * | 2009-05-26 | 2010-12-02 | 일진반도체(주) | 발광 다이오드 패키지 및 백라이트 유닛 |
WO2010137841A3 (ko) * | 2009-05-26 | 2011-03-03 | 일진반도체(주) | 발광 다이오드 패키지 및 백라이트 유닛 |
WO2016060472A1 (ko) * | 2014-10-17 | 2016-04-21 | 서울반도체 주식회사 | 백라이트 유닛 및 사이드뷰 발광 다이오드 패키지 |
KR101678790B1 (ko) * | 2015-08-26 | 2016-11-23 | 주식회사원광전자 | 표시용 엘이디와 조도센서의 일체형 패키지 |
Also Published As
Publication number | Publication date |
---|---|
TWI388069B (zh) | 2013-03-01 |
TW200729565A (en) | 2007-08-01 |
DE112006003435T5 (de) | 2008-10-09 |
WO2007073062A1 (en) | 2007-06-28 |
DE112006003435B4 (de) | 2012-04-26 |
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