KR100678303B1 - Cmp pad dresser and cmp apparatus - Google Patents

Abstract

The chemical mechanical polishing (CMP) pad dresser of the chemical mechanical polishing (CMP) device for flattening the surface of the wafer in the manufacturing process of the semiconductor device is formed by processing the ceramic and integrally formed, thereby forming a conventional chemical mechanical polishing ( Diamonds attached to the pad dresser may escape and damage the chemical mechanical polishing (CMP) pad during conditioning, as well as remaining on the chemical mechanical polishing (CMP) pad and scratching subsequent wafers. Scratch lowers the yield of the wafer.

Pad Dresser, Chemical Mechanical Polishing, CMP

Description

Chemical mechanical polishing (CPM) pad dresser and chemical mechanical polishing (CPM) device {CMP PAD DRESSER AND CMP APPARATUS}

1 is a diagram illustrating a chemical mechanical polishing (CMP) apparatus.

FIG. 2 is a plan view showing the bottom surface of a conventional pad dresser in a chemical mechanical polishing (CMP) apparatus.

3 is a cross-sectional view showing a cross section of a conventional pad dresser in a chemical mechanical polishing (CMP) apparatus.

Figure 4 is a plan view showing the bottom surface of the pad dresser according to the present invention of the chemical mechanical polishing (CMP) apparatus.

5 is a cross-sectional view showing a cross section of a pad dresser according to the present invention in a chemical mechanical polishing (CMP) apparatus.

<Description of the symbols for the main parts of the drawings>

10: disc 11: chemical mechanical polishing (CMP) pad

50: wafer holding head 55: wafer

100: chemical mechanical polishing (CMP) pad dresser

110: turning

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical mechanical polishing (CMP) pad dresser, and more particularly, to a chemical mechanical polishing (CMP) pad for preventing scratches on the surface of a CMP pad due to separation of diamonds formed in the pad dresser. The present invention relates to a dresser, and to a chemical mechanical polishing (CMP) pad dresser formed integrally by processing ceramic.

In the process of manufacturing a semiconductor device, a chemical mechanical polishing (CMP) process is widely used as a method for planarizing surfaces of layers formed in multiple layers. In the chemical mechanical polishing (CMP) process, a slurry is supplied and applied on top of the chemical mechanical polishing (CMP) pad while rotating the disk to which the chemical mechanical polishing (CMP) pad is attached. By rotating the wafer fixed to the wafer carrier in close contact with the surface of the chemical mechanical polishing (CMP) pad, the surface of the wafer is flattened by the friction effect and the chemical composition of the slurry.

The surface of the chemical mechanical polishing (CMP) pad, which is usually made of polyurethane, is formed with a myriad of fine grooves, and serves to smoothly supply slurry while friction with the wafer surface. However, as the polishing of the wafer proceeds continuously, the grooves are sandwiched or abraded with abrasives or other kinds of foreign matter in the slurry, so that they are changed to a state different from the initial surface state. When the chemical mechanical polishing (CMP) pad is deteriorated, the degree of polishing, that is, the polishing rate, decreases, so that a process of regenerating the surface state of the polishing cloth (called conditioning) is essential.

Conditioning of chemical mechanical polishing (CMP) pads is accomplished by rubbing the surface of the chemical mechanical polishing (CMP) pad with a diamond-attached chemical mechanical polishing (CMP) pad dresser. A method of returning to the initial state is used.

As shown in Figs. 2 and 3, such a chemical mechanical pad dresser is provided with abrasive particles made of diamond on the disk substrate.

A chemical mechanical polishing (CMP) pad dresser is a diamond particle that is abraded using an electrodeposition process or a deposition process, which is loaded on a nickel substrate and applied electrical energy to an aqueous nickel solution to plate nickel on a metal using a chemical reaction on an electrode surface. Is attached to the disk substrate.

As described above, the diamond fixed by the electrodeposition process or the welding process may be incompletely attached to the disk substrate, as well as used during friction and chemical mechanical polishing (CMP) processes during the conditioning of the chemical mechanical polishing (CMP) pad. The reaction with the chemical liquid leaves the chemical mechanical polishing (CMP) pad from the body of the disk substrate and falls on the chemical mechanical polishing (CMP) pad. Falling diamonds not only damage the chemical mechanical polishing (CMP) pads during conditioning, but also have the disadvantage of remaining on the chemical mechanical polishing (CMP) pads and scratching subsequent wafers, which results in lower wafer yields. Let's go.

The technical problem to be achieved by the present invention is to solve the problems as described above, to prevent the diamond abrasive projections commonly used in chemical mechanical polishing (CMP) pad dresser to escape, thereby preventing scratches A chemical mechanical polishing (CMP) pad dresser is provided.

In order to solve the above problems, in the present invention, the chemical mechanical polishing (CMP) pad dresser used in the chemical mechanical polishing (CMP) process processes a ceramic to prevent chemical particles from leaving the abrasive particles to process the chemical mechanical polishing (CMP) pad. It is formed integrally.

Specifically, a chemical mechanical polishing (CMP) pad dresser used in a chemical mechanical polishing (CMP) apparatus for planarizing a wafer surface in a semiconductor device manufacturing process, wherein the chemical mechanical polishing (CMP) pad dresser is processed into a ceramic. A chemical mechanical polishing (CMP) pad dresser is formed.

DETAILED DESCRIPTION Embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

A chemical mechanical polishing (CMP) pad dresser according to an embodiment of the present invention will now be described in detail with reference to the drawings.

First, FIG. 1 is a view illustrating a chemical mechanical polishing (CMP) device, and is a chemical mechanical polishing (CMP) device to be used by mounting a chemical mechanical polishing (CMP) pad dresser developed in the present invention.

First, the chemical mechanical polishing (CMP) apparatus will be described in detail. The rotating disc 10, the chemical mechanical polishing (CMP) pad 11, the wafer holding head 50, and the chemical mechanical polishing (CMP) pad dresser 100 are described. Although not shown, a supply part for supplying a slurry for chemical planarization is also formed.

Looking at each part, the chemical mechanical polishing (CMP) pad 11 is fixed on the rotating disk 10, the chemical mechanical polishing (CMP) pad dresser on top of the chemical mechanical polishing (CMP) pad 11 100 and the wafer holding head 50 are positioned at regular intervals, and the chemical mechanical polishing (CMP) pad dresser 100 and the wafer holding head 50 are also formed to rotate respectively.

First, the wafer holding head 50 has a fixed end capable of fixing the wafer 55 at the lower end thereof. After fixing the wafer 55, the wafer 55 is brought into close contact with the chemical mechanical polishing (CMP) pad 11. After the rotation, the surface of the wafer 55 is planarized.

On the other hand, the chemical mechanical polishing (CMP) pad dresser 100 removes the slurry collected in the pores of the surface of the chemical mechanical polishing (CMP) pad 11, the wafer 55 is in close rotation, and dull the chemical mechanical polishing (CMP) Conditioning to restore the abrasiveness of the pad 11 is performed.

The chemical mechanical polishing (CMP) pad dresser 100 used in the present invention is as shown in FIGS. 4 and 5.

4 is a plan view showing a bottom surface of the pad dresser according to the present invention among the chemical mechanical polishing (CMP) apparatus, and FIG. 5 is a cross-sectional view showing a cross section of the pad dresser according to the present invention among the chemical mechanical polishing (CMP) apparatus.

The chemical mechanical polishing (CMP) pad dresser 100 of the present invention is a chemical mechanical polishing (CMP) pad dresser formed integrally by processing ceramics to solve the conventional problems.

That is, by processing the ceramic abrasive particles formed of conventional diamond to form a protrusion 110 integrated in the body of the chemical mechanical polishing (CMP) pad dresser 100. The method of forming the protrusions 110 may be formed using a variety of methods, such as a method of processing by using a machine and a method of forming a pattern by using a mold, but preferably by a thermal spraying method on a ceramic substrate. The protrusion 110 is formed with the chemical mechanical polishing (CMP) pad dresser 100.

Looking at the lower surface of the chemical mechanical polishing (CMP) pad dresser 100 formed of ceramic (see FIG. 4), in the embodiment of the present invention, since the protrusions are formed on the ceramic substrate by using a thermal spraying method, the protrusions 110 may be the pad dresser. Irregularly formed on the lower surface of the (100), it is preferable that the protrusion 110 is formed to have a height of about 10 ~ 100㎛. In general, the chemical mechanical polishing (CMP) pad dresser 100 may form protrusions 110 having various shapes, although it is common to form abrasive particles having a circular shape as shown in FIG. The protrusion 110 may also be formed on the side surface of the chemical mechanical polishing (CMP) pad dresser.

Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of rights.

As described above, a chemical mechanical polishing (CMP) pad dresser is formed by processing a ceramic into a ceramic, and the chemical mechanical polishing (CMP) pad dresser is integrally formed with a conditioning protrusion to form a chemical mechanical polishing (CMP) pad dresser. Not only does the diamond attached to the chip damage the chemical mechanical polishing (CMP) pad during conditioning, but also has the disadvantage of remaining on the chemical mechanical polishing (CMP) pad and scratching subsequent wafers. Will lower the yield.

Claims (6)

A chemical mechanical polishing (CMP) pad dresser used in a chemical mechanical polishing (CMP) apparatus for planarizing the surface of a wafer in a semiconductor device manufacturing process, The chemical mechanical polishing (CMP) pad dresser is a ceramic mechanical polishing (CMP) pad dresser comprising a protrusion formed by a spraying method and integral with the main body. delete delete In claim 1, The chemical mechanical polishing (CMP) pad dresser is a chemical mechanical polishing (CMP) pad dresser having a projection having a height of 10 ~ 100 ㎛ by the thermal spraying method. A chemical mechanical polishing (CMP) apparatus for planarizing the surface of a wafer in the manufacturing process of a semiconductor device, Chemical mechanical polishing (CMP) pad dresser is a chemical mechanical polishing (CMP) pad dresser which is formed by processing a ceramic, and is a chemical mechanical polishing (CMP) in which the protruding protrusion and the main body on which the protrusion is formed are integrally formed. Pad dresser, A wafer holder for fixing a wafer to be polished, A chemical mechanical polishing (CMP) pad to which the wafer is polished, The projection of the pad dresser is a chemical mechanical polishing (CMP) device formed to have a height of 10 ~ 100 ㎛ by the spraying method. delete

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