KR100637101B1 - 에피택셜 스택과 금속층의 이중 구조로 된 콘택플러그를구비하는 반도체소자 및 그의 제조 방법 - Google Patents
에피택셜 스택과 금속층의 이중 구조로 된 콘택플러그를구비하는 반도체소자 및 그의 제조 방법 Download PDFInfo
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- KR100637101B1 KR100637101B1 KR1020050033263A KR20050033263A KR100637101B1 KR 100637101 B1 KR100637101 B1 KR 100637101B1 KR 1020050033263 A KR1020050033263 A KR 1020050033263A KR 20050033263 A KR20050033263 A KR 20050033263A KR 100637101 B1 KR100637101 B1 KR 100637101B1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 66
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 25
- 239000002184 metal Substances 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 104
- 239000010703 silicon Substances 0.000 claims abstract description 104
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 66
- 238000000034 method Methods 0.000 claims abstract description 61
- 230000008569 process Effects 0.000 claims abstract description 37
- 238000000151 deposition Methods 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 238000004140 cleaning Methods 0.000 claims abstract description 30
- 230000007547 defect Effects 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 36
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 27
- 239000007789 gas Substances 0.000 claims description 27
- 229910052698 phosphorus Inorganic materials 0.000 claims description 27
- 239000011574 phosphorus Substances 0.000 claims description 27
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 16
- 239000001257 hydrogen Substances 0.000 claims description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 14
- 238000011065 in-situ storage Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 11
- 229910052732 germanium Inorganic materials 0.000 claims description 11
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 11
- 239000011229 interlayer Substances 0.000 claims description 11
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical group [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 8
- 238000005108 dry cleaning Methods 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 5
- 239000010941 cobalt Substances 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 claims description 3
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims 1
- 230000035876 healing Effects 0.000 claims 1
- 238000007669 thermal treatment Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 abstract description 30
- 230000006866 deterioration Effects 0.000 abstract description 6
- 238000004381 surface treatment Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 51
- 125000004429 atom Chemical group 0.000 description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 8
- 125000006850 spacer group Chemical group 0.000 description 7
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 238000009832 plasma treatment Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000348 solid-phase epitaxy Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000593 degrading effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910000078 germane Inorganic materials 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- Microelectronics & Electronic Packaging (AREA)
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- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (19)
- 동일 물질의 제1에피택셜층 사이에 상기 제1에피택셜층과 다른 물질의 제2에피택셜층이 삽입된 에피택셜스택과 상기 에피택셜 스택 상의 금속층으로 이루어진 콘택플러그를 포함하는 반도체소자.
- 제1항에 있어서,상기 에피택셜스택에서,상기 제1에피택셜층은 실리콘이고, 상기 제2에피택셜층은 실리콘저마늄이되, SEG 공정에 의해 제1SEG-실리콘, SEG-실리콘저마늄 및 제2SEG-실리콘의 순서로 스택된 것을 특징으로 하는 반도체 소자.
- 제2항에 있어서,상기 제1SEG-실리콘, SEG-실리콘저마늄 및 제2SEG-실리콘은,인이 도핑된 것을 특징으로 하는 반도체 소자.
- 제3항에 있어서,상기 인의 도핑농도는,상기 제1,2SEG-실리콘에서 1E19∼5E19atoms/cm3이고, 상기 SEG-실리콘저마늄에서는 8E19∼1E20atoms/cm3인 것을 특징으로 하는 반도체 소자.
- 제2항 내지 제4항 중 어느 한 항에 있어서,상기 제1,2SEG-실리콘은 10Å∼50Å 두께이고, 상기 SEG-실리콘저마늄은 100Å∼300Å 두께인 것을 특징으로 하는 반도체 소자.
- 제2항 내지 제4항 중 어느 한 항에 있어서,상기 SEG-실리콘저마늄 내에 저마늄이 5%∼30% 범위로 첨가된 것을 특징으로 하는 반도체 소자.
- 제1항에 있어서,상기 금속층은,티타늄, 티타늄나이트라이드, 니켈, 텅스텐 또는 코발트 중에서 선택되는 것을 특징으로 하는 반도체 소자.
- 반도체 기판 상에 층간절연막을 형성하는 단계;상기 층간절연막을 선택적으로 식각하여 상기 반도체 기판의 일부 표면을 오픈시키는 콘택홀을 형성하는 단계;상기 콘택홀 바닥의 결함을 치유하고 자연산화막을 제거하기 위한 제1전세정 단계;상기 제1전세정 후에 상기 콘택홀 바닥의 반도체 기판 표면에 잔류하는 미세 산화막을 제거하기 위해 비정질이 형성되는 온도에서 희생막을 형성하는 단계;상기 희생막을 제거하는 단계;상기 콘택홀에 SEG 공정을 통해 적어도 SEG-실리콘저마늄을 포함하는 에피택셜 스택을 형성하는 단계;상기 에피택셜스택 표면의 자연산화막을 제거하기 위한 제2전세정 단계; 및상기 에피택셜스택 상에 상기 콘택홀을 채우는 금속층을 형성하는 단계를 포함하는 반도체소자의 제조 방법.
- 제8항에 있어서,상기 에피택셜스택을 형성하는 단계는,제1SEG-실리콘을 성장시키는 단계;상기 제1SEG-실리콘 상에 SEG-실리콘저마늄을 성장시키는 단계; 및상기 SEG-실리콘저마늄 상에 제2SEG-실리콘을 성장시키는 단계를 포함하는 것을 특징으로 하는 반도체소자의 제조 방법.
- 제9항에 있어서,상기 SEG-실리콘저마늄을 성장시키는 단계는,상기 제1SEG-실리콘을 일정 두께로 성장시킨 후 상기 제1SEG-실리콘을 계속 성장시키되 저매인 가스를 추가로 흘려주어 상기 SEG-실리콘저마늄 내에 저마늄을 5%∼30% 범위로 첨가하는 것을 특징으로 하는 반도체소자의 제조 방법.
- 제9항에 있어서,상기 제1SEG-실리콘, SEG-실리콘저마늄 및 상기 제2SEG-실리콘 성장시 인시튜로 인을 도핑하는 것을 특징으로 하는 반도체 소자의 제조 방법.
- 제11항에 있어서,상기 제1,2SEG-실리콘에서의 인의 도핑농도는 1E19∼5E19atoms/cm3이고, 상기 SEG-실리콘저마늄에서의 인의 도핑농도는 8E19∼1E20atoms/cm3인 것을 특징으로 하는 반도체 소자의 제조 방법.
- 제9항에 있어서,상기 제1,2SEG-실리콘은 10Å∼50Å 두께로 성장시키고, 상기 SEG-실리콘저마늄은 100Å∼300Å 두께로 성장시키는 것을 특징으로 하는 반도체 소자의 제조 방법.
- 제8항에 있어서,상기 희생막 형성 단계, 희생막 제거 단계 및 상기 에피택셜 스택의 성장 단계는,LPCVD, VLPCVD, PECVD, UHVCVD, RTCVD 또는 APCVD 중에서 선택된 장비를 이용하여 진행하되, 400℃∼700℃의 온도에서 진행하는 것을 특징으로 하는 반도체소자의 제조 방법.
- 제8항에 있어서,상기 희생막을 형성하는 단계는,500℃∼600℃에서 비선택적으로 1E20∼1E21 atoms/cm3로 불순물이 도핑된 실리콘막을 50Å∼80Å 두께로 증착하는 것을 특징으로 하는 반도체소자의 제조 방법.
- 제8항 또는 제15항에 있어서,상기 희생막을 제거하는 단계는,할로겐 가스를 이용하여 상기 희생막을 형성하는 챔버에서 인시튜로 진행하는 것을 특징으로 하는 반도체소자의 제조 방법.
- 제8항에 있어서,상기 금속층은,티타늄, 티타늄나이트라이드, 니켈, 텅스텐 또는 코발트 중에서 선택하여 형성하는 것을 특징으로 하는 반도체 소자의 제조 방법.
- 제8항에 있어서,상기 제1,2전세정 단계는,건식세정 또는 습식세정으로 진행하는 것을 특징으로 하는 반도체소자의 제조 방법.
- 제18항에 있어서,상기 건식세정은,수소가스 분위기 또는 수소계열 가스분위기에서 700℃∼900℃ 범위의 고온으로 급속열처리 세정하는 것을 특징으로 하는 반도체소자의 제조 방법.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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KR1020050033263A KR100637101B1 (ko) | 2005-04-21 | 2005-04-21 | 에피택셜 스택과 금속층의 이중 구조로 된 콘택플러그를구비하는 반도체소자 및 그의 제조 방법 |
US11/154,474 US7605070B2 (en) | 2005-04-21 | 2005-06-17 | Semiconductor device having contact plug formed in double structure by using epitaxial stack and metal layer and method for fabricating the same |
US12/566,181 US20100013097A1 (en) | 2005-04-21 | 2009-09-24 | Semiconductor device having contact plug formed in double structure by using epitaxial stack and metal layer and method for fabricating the same |
Applications Claiming Priority (1)
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KR1020050033263A KR100637101B1 (ko) | 2005-04-21 | 2005-04-21 | 에피택셜 스택과 금속층의 이중 구조로 된 콘택플러그를구비하는 반도체소자 및 그의 제조 방법 |
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Cited By (1)
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KR20220114620A (ko) * | 2020-05-22 | 2022-08-17 | 어플라이드 머티어리얼스, 인코포레이티드 | 필드 폴리머 보호들을 이용한 방향성 선택적 접합 세정 |
Families Citing this family (8)
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JP4215787B2 (ja) * | 2005-09-15 | 2009-01-28 | エルピーダメモリ株式会社 | 半導体集積回路装置およびその製造方法 |
JP2007294618A (ja) * | 2006-04-24 | 2007-11-08 | Elpida Memory Inc | 半導体装置の製造方法及び半導体装置 |
JP2008047720A (ja) * | 2006-08-17 | 2008-02-28 | Elpida Memory Inc | 半導体装置の製造方法 |
KR100814417B1 (ko) * | 2006-10-02 | 2008-03-18 | 삼성전자주식회사 | 단결정 실리콘 패턴 형성 방법 및 이를 이용한 불 휘발성 메모리 소자의 형성 방법 |
US20140264612A1 (en) * | 2013-03-15 | 2014-09-18 | International Business Machines Corporation | Growth of epitaxial semiconductor regions with curved top surfaces |
US10163797B2 (en) * | 2015-10-09 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Forming interlayer dielectric material by spin-on metal oxide deposition |
US10058371B2 (en) * | 2015-11-18 | 2018-08-28 | Medtronic Cryocath Lp | Multi-lobe balloon for cryoablation |
US10608012B2 (en) * | 2017-08-29 | 2020-03-31 | Micron Technology, Inc. | Memory devices including memory cells and related methods |
Family Cites Families (6)
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US6077752A (en) * | 1995-11-20 | 2000-06-20 | Telefonaktiebolaget Lm Ericsson | Method in the manufacturing of a semiconductor device |
JP2877108B2 (ja) * | 1996-12-04 | 1999-03-31 | 日本電気株式会社 | 半導体装置およびその製造方法 |
JP3478141B2 (ja) * | 1998-09-14 | 2003-12-15 | 信越半導体株式会社 | シリコンウエーハの熱処理方法及びシリコンウエーハ |
KR100327596B1 (ko) * | 1999-12-31 | 2002-03-15 | 박종섭 | Seg 공정을 이용한 반도체소자의 콘택 플러그 제조방법 |
KR100475084B1 (ko) * | 2002-08-02 | 2005-03-10 | 삼성전자주식회사 | Dram 반도체 소자 및 그 제조방법 |
US6893911B2 (en) * | 2003-03-16 | 2005-05-17 | Infineon Technologies Aktiengesellschaft | Process integration for integrated circuits |
-
2005
- 2005-04-21 KR KR1020050033263A patent/KR100637101B1/ko not_active Expired - Fee Related
- 2005-06-17 US US11/154,474 patent/US7605070B2/en not_active Expired - Fee Related
-
2009
- 2009-09-24 US US12/566,181 patent/US20100013097A1/en not_active Abandoned
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220114620A (ko) * | 2020-05-22 | 2022-08-17 | 어플라이드 머티어리얼스, 인코포레이티드 | 필드 폴리머 보호들을 이용한 방향성 선택적 접합 세정 |
KR102802058B1 (ko) * | 2020-05-22 | 2025-04-28 | 어플라이드 머티어리얼스, 인코포레이티드 | 필드 폴리머 보호들을 이용한 방향성 선택적 접합 세정 |
Also Published As
Publication number | Publication date |
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US20100013097A1 (en) | 2010-01-21 |
US7605070B2 (en) | 2009-10-20 |
US20060240655A1 (en) | 2006-10-26 |
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