KR100484515B1 - 유전체 자기 조성물 및 전자부품 - Google Patents
유전체 자기 조성물 및 전자부품 Download PDFInfo
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- KR100484515B1 KR100484515B1 KR10-2002-7011085A KR20027011085A KR100484515B1 KR 100484515 B1 KR100484515 B1 KR 100484515B1 KR 20027011085 A KR20027011085 A KR 20027011085A KR 100484515 B1 KR100484515 B1 KR 100484515B1
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- 239000000203 mixture Substances 0.000 title claims abstract description 77
- 229910052573 porcelain Inorganic materials 0.000 title 1
- 239000000919 ceramic Substances 0.000 claims abstract description 63
- 229910052788 barium Inorganic materials 0.000 claims abstract description 14
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 13
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 12
- 229910052692 Dysprosium Inorganic materials 0.000 claims abstract description 7
- 229910052689 Holmium Inorganic materials 0.000 claims abstract description 7
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 6
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 6
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 5
- 239000004615 ingredient Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 20
- 239000000470 constituent Substances 0.000 claims description 7
- 229910052691 Erbium Inorganic materials 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- 239000002075 main ingredient Substances 0.000 claims 1
- 239000012298 atmosphere Substances 0.000 abstract description 34
- 238000009413 insulation Methods 0.000 abstract description 19
- 239000010410 layer Substances 0.000 description 78
- 239000003990 capacitor Substances 0.000 description 59
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- 238000000137 annealing Methods 0.000 description 16
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
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- 239000001301 oxygen Substances 0.000 description 10
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- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 5
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- 230000002411 adverse Effects 0.000 description 4
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- 229910052726 zirconium Inorganic materials 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
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- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
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- 229910052765 Lutetium Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 2
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- 229910052725 zinc Inorganic materials 0.000 description 2
- SXAMGRAIZSSWIH-UHFFFAOYSA-N 2-[3-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-1,2,4-oxadiazol-5-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1=NOC(=N1)CC(=O)N1CC2=C(CC1)NN=N2 SXAMGRAIZSSWIH-UHFFFAOYSA-N 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910020599 Co 3 O 4 Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 1
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
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- 230000002950 deficient Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
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- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 150000003891 oxalate salts Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
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- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
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- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- 238000005476 soldering Methods 0.000 description 1
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- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 description 1
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- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
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Abstract
Description
Claims (12)
- 티탄산바륨을 포함하는 주성분과,AE 산화물을 포함하는 제1부성분과,R 산화물을 포함하는 제2부성분을 갖고,상기 AE는 Mg, Ca, Ba 및 Sr 중에서 선택되는 적어도 1종이고,상기 R은 Y, Dy, Ho 및 Er 중에서 선택되는 적어도 1종이며,상기 주성분 100mol에 대한 각 부성분의 비율이,제1부성분: 0mol<제1부성분<0.1mol,제2부성분: 1mol<제2부성분<7mol인 유전체 자기 조성물.
- 제 1 항에 있어서, 제1부성분의 mol수에 대한 제2부성분의 mol수의 비(제2부성분/제1부성분)가 10<(제2부성분/제1부성분)<500인 유전체 자기 조성물.
- 제 1 항 또는 제 2 항에 있어서, CaZrO3 또는 CaO + ZrO2를 포함하는 제6부성분을 추가로 갖고, 상기 주성분 100mol에 대한 상기 제6부성분의 비율이 0mol<제6부성분<5mol인 유전체 자기 조성물.
- 제 1 항 또는 제 2 항에 있어서, MxSiO3를 포함하는 제3부성분을 추가로 갖고,상기 M은 Ba, Ca, Sr, Li, B 중에서 선택되는 적어도 1종으로,M이 Ba인 경우에는 x=1, M이 Ca인 경우에는 x=1, M이 Sr인 경우에는 x=1, M이 Li인 경우에는 x=2, M이 B인 경우에는 x=2/3이며,상기 주성분 100mol에 대한 상기 제3부성분의 비율이 2mol≤제3부성분 ≤10mol인 유전체 자기 조성물.
- 제 1 항 또는 제 2 항에 있어서, Mn0 및 Cr2O3 중 적어도 1종을 포함하는 제4부성분을 추가로 갖고, 상기 주성분 100mol에 대한 상기 제4부성분의 비율이 0mol<제4부성분≤0.5mol인 유전체 자기 조성물.
- 제 1 항 또는 제 2 항에 있어서, V2O5, MoO3 및 WO3 중에서 선택되는 적어도 1종을 포함하는 제5부성분을 추가로 갖고, 상기 주성분 100mol에 대한 상기 제5부성분의 비율이 0.01mol≤제5부성분≤0.5mol인 유전체 자기 조성물.
- 유전체 자기 조성물로 구성되어 있는 유전체층을 갖는 전자부품에 있어서,상기 유전체 자기 조성물이 티탄산바륨을 포함하는 주성분과,AE 산화물을 포함하는 제1부성분과,R 산화물을 포함하는 제2부성분을 갖고,상기 AE는 Mg, Ca, Ba 및 Sr 중에서 선택되는 적어도 1종이고,상기 R은 Y, Dy, Ho 및 Er 중에서 선택되는 적어도 1종이며,상기 주성분 100mol에 대한 각 부성분의 비율이,제1부성분: 0mol<제1부성분<0.1 mol,제2부성분: 1mol<제2부성분<7mol인 전자부품.
- 제 7 항에 있어서, 제1부성분의 mol수에 대한 제2부성분의 mol수의 비(제2부성분/제1부성분)가 10<(제2부성분/제1부성분)<500인 전자부품.
- 제 7 항 또는 제 8 항에 있어서, CaZrO3 또는 CaO + ZrO2를 포함하는 제6부성분을 추가로 갖고, 상기 주성분 100mol에 대한 상기 제6부성분의 비율이 0mol<제6부성분<5mol인 전자부품.
- 제 7 항 또는 제 8 항에 있어서, MxSiO3를 포함하는 제3부성분을 추가로 갖고,상기 M은 Ba, Ca, Sr, Li, B 중에서 선택되는 적어도 1종으로,M이 Ba인 경우에는 x=1, M이 Ca인 경우에는 x=1, M이 Sr인 경우에는 x=1, M이 Li인 경우에는 x=2, M이 B인 경우에는 x=2/3이며,상기 주성분 100mol에 대한 상기 제3부성분의 비율이 2mol≤제3부성분 ≤10mol인 전자부품.
- 제 7 항 또는 제 8 항에 있어서, MnO 및 Cr2O3 중 적어도 1종을 포함하는 제4부성분을 추가로 갖고, 상기 주성분 100mol에 대한 상기 제4부성분의 비율이 0mol<제4부성분≤0.5 mol인 전자부품.
- 제 7 항 또는 제 8 항에 있어서, V2O5, MoO3 및 WO3 중에서 선택되는 적어도 1종을 포함하는 제5부성분을 추가로 갖고, 상기 주성분 100mol에 대한 상기 제5부성분의 비율이 0.01mol≤제5부성분≤0.5 mol인 전자부품.
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CN (1) | CN100400463C (ko) |
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US7482299B2 (en) * | 1998-07-29 | 2009-01-27 | Namics Corporation | Dielectric ceramic composition and multi-layer ceramic capacitor |
TW569254B (en) * | 2001-11-14 | 2004-01-01 | Taiyo Yuden Kk | Ceramic capacitor and its manufacturing method |
JP4203452B2 (ja) * | 2004-06-28 | 2009-01-07 | Tdk株式会社 | 積層型セラミックコンデンサの製造方法 |
JP4095586B2 (ja) * | 2004-06-29 | 2008-06-04 | Tdk株式会社 | 積層型セラミックコンデンサおよびその製造方法 |
TWI275582B (en) | 2004-08-30 | 2007-03-11 | Tdk Corp | Dielectric ceramic composition and electronic device |
JP4428187B2 (ja) * | 2004-10-12 | 2010-03-10 | Tdk株式会社 | 誘電体磁器組成物及び電子部品 |
JP4407497B2 (ja) * | 2004-11-30 | 2010-02-03 | Tdk株式会社 | 誘電体磁器組成物及び電子部品 |
JP4748978B2 (ja) * | 2004-12-02 | 2011-08-17 | 日本碍子株式会社 | 圧電/電歪素子及びその製造方法 |
EP1702905A1 (en) * | 2005-03-09 | 2006-09-20 | TDK Corporation | Piezoelectric ceramic composition, production method thereof, piezoelectric element and fabrication method thereof |
US7528088B2 (en) | 2005-04-01 | 2009-05-05 | Tdk Corporation | Electronic device |
JP4937522B2 (ja) * | 2005-04-04 | 2012-05-23 | Tdk株式会社 | 電子部品、誘電体磁器組成物およびその製造方法 |
JP4483659B2 (ja) * | 2005-04-04 | 2010-06-16 | Tdk株式会社 | 電子部品、誘電体磁器組成物およびその製造方法 |
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US7541306B2 (en) * | 2007-01-17 | 2009-06-02 | Ferro Corporation | X8R dielectric composition for use with nickel electrodes |
US7521390B2 (en) * | 2007-03-05 | 2009-04-21 | Ferro Corporation | Ultra low temperature fixed X7R and BX dielectric ceramic composition and method of making |
US8178458B2 (en) * | 2009-12-01 | 2012-05-15 | National Taiwan University Technology | Dielectric ceramic composition |
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US10155697B2 (en) | 2012-03-22 | 2018-12-18 | Holy Stone Enterprise Co., Ltd. | Composite dielectric ceramic material having anti-reduction and high temperature stability characteristics and method for preparing same |
TWI639575B (zh) * | 2016-07-19 | 2018-11-01 | 禾伸堂企業股份有限公司 | Anti-reduction high-temperature stable composite dielectric ceramic material and manufacturing method thereof |
KR20140118557A (ko) * | 2013-03-29 | 2014-10-08 | 삼성전기주식회사 | 유전체 자기 조성물 및 이를 포함하는 적층 세라믹 캐패시터 |
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US6764976B2 (en) | 2004-07-20 |
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EP1262467A1 (en) | 2002-12-04 |
CN100400463C (zh) | 2008-07-09 |
WO2002051770A1 (fr) | 2002-07-04 |
DE60129533D1 (de) | 2007-09-06 |
KR20020092966A (ko) | 2002-12-12 |
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