KR100467114B1 - 유기 일렉트로루미네선스 디스플레이 패널 - Google Patents
유기 일렉트로루미네선스 디스플레이 패널 Download PDFInfo
- Publication number
- KR100467114B1 KR100467114B1 KR10-2002-0020578A KR20020020578A KR100467114B1 KR 100467114 B1 KR100467114 B1 KR 100467114B1 KR 20020020578 A KR20020020578 A KR 20020020578A KR 100467114 B1 KR100467114 B1 KR 100467114B1
- Authority
- KR
- South Korea
- Prior art keywords
- electrode
- organic
- layer
- organic electroluminescent
- display panel
- Prior art date
Links
- 238000005401 electroluminescence Methods 0.000 title description 2
- 239000010408 film Substances 0.000 claims abstract description 27
- 238000005192 partition Methods 0.000 claims abstract description 27
- 239000010409 thin film Substances 0.000 claims abstract description 11
- 230000001681 protective effect Effects 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 6
- 238000007789 sealing Methods 0.000 abstract description 20
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 14
- 238000009413 insulation Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 description 14
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000001771 vacuum deposition Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
Landscapes
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (3)
- 유기 일렉트로루미네선스 재료의 박막으로 이루어지는 발광층을 구비한 유기 일렉트로루미네선스 소자를 매트릭스상으로 배치한 유기 일렉트로루미네선스 디스플레이 패널로서,제 1 전극이 표면에 평행한 스트라이프형상으로 형성된 기판과,상기 제 1 전극상의 소정 위치에 복수의 상기 유기 일렉트로루미네선스 소자를 형성하기 위한 영역을 남기고 상기 제 1 전극과 교차하는 상태로 형성된 절연성 격벽과,상기 영역상에 형성된 유기 일렉트로루미네선스층과,적어도 상기 유기 일렉트로루미네선스층을 덮음과 동시에 평행한 스트라이프형상으로 형성된 제 2 전극을 구비하며,상기 절연성 격벽은 상기 제 1 전극에 가까워질수록 폭이 좁아지는 역테이퍼형상으로 형성된 2 개의 돌조와, 양 돌조의 외측을 따라 저면측의 폭이 넓어지는 테이퍼형상으로 형성된 절연층으로 구성되어 있는 것을 특징으로 하는 유기 일렉트로루미네선스 디스플레이 패널.
- 제 1 항에 있어서, 상기 절연층은 포지티브형 레지스트로 형성되어 있는 것을 특징으로 하는 유기 일렉트로루미네선스 디스플레이 패널.
- 제 1 항 또는 제 2 항에 있어서, 상기 유기 일렉트로루미네선스 소자를 덮는 보호막이 형성되어 있는 것을 특징으로 하는 유기 일렉트로루미네선스 디스플레이 패널.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001229219A JP2003045668A (ja) | 2001-07-30 | 2001-07-30 | 有機エレクトロルミネッセンスディスプレイパネル |
JPJP-P-2001-00229219 | 2001-07-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030012813A KR20030012813A (ko) | 2003-02-12 |
KR100467114B1 true KR100467114B1 (ko) | 2005-01-24 |
Family
ID=19061604
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2002-0020578A KR100467114B1 (ko) | 2001-07-30 | 2002-04-16 | 유기 일렉트로루미네선스 디스플레이 패널 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2003045668A (ko) |
KR (1) | KR100467114B1 (ko) |
TW (1) | TW550973B (ko) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100702481B1 (ko) * | 2003-07-01 | 2007-04-04 | 엘지전자 주식회사 | 무격벽 유기 전계 발광 소자 및 그 제조방법 |
US7132796B2 (en) * | 2003-12-30 | 2006-11-07 | Lg.Philips Lcd Co., Ltd | Organic electroluminescent device and method of fabricating the same |
KR100611757B1 (ko) * | 2004-06-18 | 2006-08-10 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 소자 및 그 제조방법 |
US6992326B1 (en) * | 2004-08-03 | 2006-01-31 | Dupont Displays, Inc. | Electronic device and process for forming same |
US7772763B2 (en) | 2004-12-02 | 2010-08-10 | Lg Display Co., Ltd. | Organic electro-luminescence display device comprising grid shaped auxiliary electrode |
KR100717332B1 (ko) * | 2005-04-19 | 2007-05-15 | 엘지전자 주식회사 | 유기 전계발광표시소자 및 그 제조방법 |
KR101143356B1 (ko) * | 2005-06-30 | 2012-05-09 | 엘지디스플레이 주식회사 | 듀얼패널타입 유기전계발광 소자 및 그의 제조방법 |
US7800101B2 (en) | 2006-01-05 | 2010-09-21 | Samsung Electronics Co., Ltd. | Thin film transistor having openings formed therein |
US8628986B2 (en) | 2007-07-31 | 2014-01-14 | Sumitomo Chemical Company, Limited | Organic electroluminescent element and method for manufacturing the same |
US7888867B2 (en) | 2007-12-28 | 2011-02-15 | Panasonic Corporation | Organic el device having bank with groove, organic el display panel, and method for manufacturing the organic el device |
JP5199772B2 (ja) * | 2008-07-30 | 2013-05-15 | 住友化学株式会社 | 有機エレクトロルミネッセンス素子及びその製造方法 |
JP5199773B2 (ja) * | 2008-07-30 | 2013-05-15 | 住友化学株式会社 | 有機エレクトロルミネッセンス素子およびその製造方法 |
JP5185007B2 (ja) * | 2008-07-31 | 2013-04-17 | 住友化学株式会社 | 有機エレクトロルミネッセンス素子の製造方法および有機エレクトロルミネッセンス素子 |
JP2012014868A (ja) * | 2010-06-29 | 2012-01-19 | Sony Corp | 表示装置 |
JP6059647B2 (ja) | 2013-12-06 | 2017-01-11 | 双葉電子工業株式会社 | 有機エレクトロルミネッセンスデバイス及びその製造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100281045B1 (ko) * | 1997-12-29 | 2001-02-01 | 구자홍 | 유기전계발광소자 |
-
2001
- 2001-07-30 JP JP2001229219A patent/JP2003045668A/ja active Pending
-
2002
- 2002-04-16 KR KR10-2002-0020578A patent/KR100467114B1/ko not_active IP Right Cessation
- 2002-04-22 TW TW091108208A patent/TW550973B/zh not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100281045B1 (ko) * | 1997-12-29 | 2001-02-01 | 구자홍 | 유기전계발광소자 |
Also Published As
Publication number | Publication date |
---|---|
KR20030012813A (ko) | 2003-02-12 |
JP2003045668A (ja) | 2003-02-14 |
TW550973B (en) | 2003-09-01 |
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