KR100419025B1 - Nitride film formation method of semiconductor device - Google Patents
Nitride film formation method of semiconductor device Download PDFInfo
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- KR100419025B1 KR100419025B1 KR1019960052260A KR19960052260A KR100419025B1 KR 100419025 B1 KR100419025 B1 KR 100419025B1 KR 1019960052260 A KR1019960052260 A KR 1019960052260A KR 19960052260 A KR19960052260 A KR 19960052260A KR 100419025 B1 KR100419025 B1 KR 100419025B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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Abstract
본 발명은 반도체소자의 질화막 형성방법에 관한 것으로, 반응로 내부에서 반도체기판 상부에 질화막을 저압화학기상증착 ( Low Pressure Chemical Vapor Deposition, 이하에서 LPCVD 라 함 ) 방법으로 증착하는 질화막 형성방법에 있어서, 상기 반응로를 질화막 증착압력보다 낮은 압력으로 유지하고 부식성 가스를 이용하여 일정시간 퍼지 ( purge ) 하고, 상기 반응로를 질소가스와 진공을 이용하여 퍼지한 다음, 상기 반응로의 압력을 질화막 증착압력으로 유지하고, 상기 부식성 가스를 이용하여 상기 반응로를 퍼지하는 동시에 디.클로로.사일렌 ( di-chloro-silane, SiH2Cl2, 이하에서 DCS 라 함 ) 가스를 플로우시켜 파티클 ( particle ) 의 오염이 억제된 막질이 우수한 질화막을 형성함으로써 반도체소자의 특성 및 신뢰성을 향상시킬 수 있는 기술이다.The present invention relates to a method of forming a nitride film of a semiconductor device, in the method of forming a nitride film by depositing a nitride film on the semiconductor substrate in the reactor by a low pressure chemical vapor deposition (LPCVD) method, The reactor is maintained at a pressure lower than the nitride deposition pressure and purged with a corrosive gas for a predetermined time, the reactor is purged with nitrogen gas and a vacuum, and the pressure of the reactor is changed to the nitride deposition pressure. maintain, di while purging the reactor using the corrosive gas in. chloro. for four days alkylene (di-chloro-silane, SiH 2 Cl 2, referred to hereinafter DCS hereinafter) by the gas flow of particles (particle) It is a technology that can improve the characteristics and reliability of semiconductor devices by forming a nitride film having excellent contamination quality.
Description
본 발명은 반도체소자의 질화막 형성방법에 관한 것으로, 특히 LPCVD 방법의 질화막 형성공정시 부반응에 의한 파티클 소오스 ( particle source ) 를 제거하여 순수한 질화막을 형성함으로써 반도체소자에 형성되는 질화막의 막질을 향상시켜 반도체소자의 특성을 향상시키는 기술에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a nitride film of a semiconductor device, and in particular, by removing a particle source caused by side reaction during the nitride film forming process of an LPCVD method to form a pure nitride film, thereby improving the film quality of the nitride film formed on the semiconductor device. A technique for improving the characteristics of the device.
종래의 질화막 형성방법은 다음과 같다.The conventional nitride film forming method is as follows.
먼저, 산화막이 형성된 반도체기판 상부에 LPCVD 방법을 이용하여 질화막을 형성한다. 이때, 상기 질화막은 실리콘질화막으로서, DCS 와 NH3가스의 열분해를 통하여 상기 산화막 표면에 형성된다.First, a nitride film is formed on the semiconductor substrate on which the oxide film is formed by using the LPCVD method. In this case, the nitride film is a silicon nitride film and is formed on the surface of the oxide film through thermal decomposition of DCS and NH 3 gas.
여기서, 상기 질화막 증착공정은 상기 질화막 증착공정과 같은 200 ∼ 250 Torr 의 압력에서 NH3가스 퍼지를 짧은 시간 진행하고, 연속적으로 DCS 가스를 플로우 ( flow ) 시킨다. 그러나, 이것만으로는 부반응으로 생성되어 보우트 ( boat ) 나 반응로 내부에 흡착된 파티클을 제거하지 못한다.In this case, the nitride film deposition process proceeds with NH 3 gas purge at a pressure of 200 to 250 Torr for the same time as the nitride film deposition process, and continuously flows the DCS gas. However, this alone does not remove particles generated by side reactions and adsorbed inside the boat or reactor.
상기한 바와같이 종래기술에 따른 반도체소자의 질화막 형성방법은, 반응로내부를 진공으로 만들고 물질을 반응시키는 LPCVD 방법으로 실시함으로써 파티클에 의한 오염도가 증가되어 상기 질화막의 막질을 저하시킨다. 이로인하여, 반도체소자의 특성 및 신뢰성을 저하시키는 문제점이 있다.As described above, the method of forming a nitride film of a semiconductor device according to the prior art is carried out by the LPCVD method in which the inside of the reactor is vacuumed and the material is reacted to increase the degree of contamination by particles, thereby reducing the film quality of the nitride film. As a result, there is a problem of lowering the characteristics and reliability of the semiconductor device.
본 발명의 상기한 종래기술의 문제점을 해결하기 위하여, 질화막 증착공정시 보다 낮은 압력에서 부식성 가스를 이용하여 일정시간 이상 퍼지공정을 실시하고 질소가스와 진공을 이용하여 반응로의 내부를 퍼지함으로써 막질이 우수한 질화막을 형성하여 반도체소자의 특성 및 신뢰성을 향상시킬 수 있도록 반도체소자의 질화막 형성방법을 제공하는데 그 목적이 있다.In order to solve the problems of the prior art of the present invention, the film quality by performing a purge process for a predetermined time using a corrosive gas at a lower pressure than the nitride film deposition process and purging the interior of the reactor using nitrogen gas and vacuum. It is an object of the present invention to provide a method for forming a nitride film of a semiconductor device so that the excellent nitride film can be formed to improve characteristics and reliability of the semiconductor device.
이상의 목적을 달성하기 위해 본 발명에 따른 반도체소자의 질화막 형성방법은,In order to achieve the above object, a method of forming a nitride film of a semiconductor device according to the present invention,
반도체소자의 질화막 형성방법에 있어서,In the method of forming a nitride film of a semiconductor device,
반응로를 질화막 증착압력보다 낮은 압력으로 유지하고 부식성 가스를 이용하여 일정시간 퍼지하는 공정과,Maintaining the reactor at a pressure lower than the nitride film deposition pressure and purging with a corrosive gas for a predetermined time;
상기 반응로를 질소가스와 진공을 이용하여 퍼지하는 공정과,Purging the reactor using nitrogen gas and vacuum;
상기 반응로의 압력을 질화막 증착압력으로 유지하는 공정과,Maintaining the pressure of the reactor at a nitride film deposition pressure;
상기 부식성 가스를 이용하여 상기 반응로를 퍼지하는 동시에 DCS 가스를 플로우시키는 LPCVD 방법으로 반도체기판 상에 질화막을 증착하는 공정을 포함하는 것과,And depositing a nitride film on a semiconductor substrate by an LPCVD method of flowing the DCS gas while simultaneously purging the reactor using the corrosive gas;
상기 낮은 압력은 500 mTorr 이하인 것과,The low pressure is less than 500 mTorr,
상기 부식성 가스는 NH3가스인 것과,The corrosive gas is NH 3 gas,
상기 부식성 가스를 이용한 퍼지공정은 10 ∼ 100 초 정도 실시하는 것과,The purge step using the corrosive gas is performed for about 10 to 100 seconds,
상기 질화막 증착압력은 200 ∼ 250 Torr 인 것을 특징으로 한다.The nitride film deposition pressure is characterized in that 200 to 250 Torr.
이하, 도시되진 않았으나 본 발명의 실시예를 설명하면 다음과 같다.Hereinafter, although not shown will be described an embodiment of the present invention.
먼저, 소정구조가 구비된 반도체기판 상에 질화막 형성하되, 상기 질화막의 막질을 향상시킬 수 있도록 퍼지공정을 수반하는 LPCVD 방법으로 증착한다.First, a nitride film is formed on a semiconductor substrate provided with a predetermined structure, and is deposited by an LPCVD method involving a purge process to improve the film quality of the nitride film.
상기 LPCVD 방법은 다음과 같은 순서로 실시한다.The LPCVD method is performed in the following order.
첫째, 질화막 증착 단계의 압력보다 낮은 500 mTorr 이하의 압력에서 NH3가스를 10 ~ 100 초 정도 플로우시킨다. 이때, 상기 NH3가스는 부식성 가스로서, 반응로 내부의 부반응 흡착물을 여기시킨다.First, the NH 3 gas is flowed for 10 to 100 seconds at a pressure of 500 mTorr or lower than the pressure of the nitride film deposition step. At this time, the NH 3 gas is a corrosive gas, and excites a side reaction adsorbate inside the reactor.
둘째, 질소가스와 진공을 이용하여 상기 반응로 내부의 여기된 부반응 흡착물을 반응로 밖으로 제거한다.Secondly, the excited side reaction adsorbate inside the reactor is removed out of the reactor using nitrogen gas and a vacuum.
셋째, 증착 단계의 압력으로 NH3가스를 이용한 퍼지공정을 실시하여 파티클을 제거하는 동시에 상기 반응로를 NH3가스분위기로 유지한다.Third, a purge process using NH 3 gas is performed at the pressure of the deposition step to remove particles and maintain the reactor in an NH 3 gas atmosphere.
이때, 상기 NH3가스분위기는 후속공정인 DCS 가스 플로우공정시 상기 반도체기판에 다결정실리콘이 형성되는 것을 방지하기 위한 것이다.At this time, the NH 3 gas atmosphere is to prevent the formation of polysilicon on the semiconductor substrate during the DCS gas flow process is a subsequent process.
넷째, 상기 반응로에 DCS 가스를 플로우시켜 상기 NH3가스와 DCS 가스의 열분해작용을 유발시킴으로써 상기 반도체기판의 소정 구조 상에 질화막을 증착한다.Fourth, a nitride film is deposited on a predetermined structure of the semiconductor substrate by flowing a DCS gas into the reactor to cause a thermal decomposition of the NH 3 gas and the DCS gas.
이상에서 설명한 바와 같이 본 발명에 따른 반도체소자의 질화막 형성방법은, 종래의 LPCVD 방법에서 짧은 시간 동안 부식성 가스에 의하여 여기된 파티클을 완전히 제거하지 못하고 연속적으로 DCS 가스를 플로우시켜 질화막을 증착함으로써 반응로 내부에 흡착된 파티클을 완전히 제거할 수 없었던 문제점을 해결하기 위하여,As described above, in the method of forming the nitride film of the semiconductor device according to the present invention, the conventional LPCVD method does not completely remove particles excited by the corrosive gas for a short time and continuously deposits the nitride film by flowing DCS gas continuously. In order to solve the problem that could not completely remove the particles adsorbed inside,
부식성가스를 이용한 파티클의 여기 공정 후 질소가스 및 진공을 이용하여 반응로 밖으로 파티클을 제거하고 후속 공정으로 종래기술과 같은 퍼지 및 DCS 가스 플로우 공정을 실시하여 파티클이 완전히 제거된 상태에서 질화막을 증착함으로 써 질화막의 막을 향상시킬 수 있는 효과를 제공한다.After excitation of particles using corrosive gas, particles are removed from the reactor using nitrogen gas and vacuum, followed by a purge and DCS gas flow process as in the prior art by depositing a nitride film in a state where the particles are completely removed. It provides an effect to improve the film of the nitride film.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5762537A (en) * | 1980-10-02 | 1982-04-15 | Semiconductor Energy Lab Co Ltd | Forming method for film |
| JPS61234534A (en) * | 1985-04-11 | 1986-10-18 | Semiconductor Energy Lab Co Ltd | Fabrication of silicon nitride coating |
| JPS61288431A (en) * | 1985-06-17 | 1986-12-18 | Fujitsu Ltd | Manufacture of insulating layer |
| KR890005881A (en) * | 1987-09-29 | 1989-05-17 | 최근선 | Method for manufacturing thin film transistor of amorphous silicon |
| KR940008042A (en) * | 1992-09-07 | 1994-04-28 | 기다오까 다까시 | Wafer vacuum chuck apparatus, gas cleaning method and nitride film forming method in semiconductor manufacturing apparatus and semiconductor manufacturing apparatus |
| KR960005863A (en) * | 1994-07-06 | 1996-02-23 | 김주용 | Method of forming nitride film of semiconductor device |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5762537A (en) * | 1980-10-02 | 1982-04-15 | Semiconductor Energy Lab Co Ltd | Forming method for film |
| JPS61234534A (en) * | 1985-04-11 | 1986-10-18 | Semiconductor Energy Lab Co Ltd | Fabrication of silicon nitride coating |
| JPS61288431A (en) * | 1985-06-17 | 1986-12-18 | Fujitsu Ltd | Manufacture of insulating layer |
| KR890005881A (en) * | 1987-09-29 | 1989-05-17 | 최근선 | Method for manufacturing thin film transistor of amorphous silicon |
| KR940008042A (en) * | 1992-09-07 | 1994-04-28 | 기다오까 다까시 | Wafer vacuum chuck apparatus, gas cleaning method and nitride film forming method in semiconductor manufacturing apparatus and semiconductor manufacturing apparatus |
| KR960005863A (en) * | 1994-07-06 | 1996-02-23 | 김주용 | Method of forming nitride film of semiconductor device |
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