KR100390539B1 - Heating unit for vaporized material transfer tube in organic semiconductor device - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device used in a semiconductor manufacturing process, and more particularly, to an apparatus and a method for heating a vaporized material transport pipe for heating a temperature distribution of a vaporized material in an organic semiconductor manufacturing device. In addition, the present invention provides a container for forming a processing chamber in which an object is processed, a first gas supply unit for supplying the processing chamber, a first heating device for heating an object installed in the processing chamber and mounted on a mounting table; It functions as a shower head heater for heating a processing gas for forming a high melting point metal film layer on an object, a first gas supply unit for supplying a process chamber, and a heat conducting medium for transferring heat from the first gas supply unit to the process chamber. And an external heater used together with a transport pipe internal heater to maintain a constant internal temperature, and a vaporized material transport pipe having a heat insulation region that forms a gas flow path between the transport pipe internal heater and the transport pipe external heater. .

Description

HEATING UNIT FOR VAPORIZED MATERIAL TRANSFER TUBE IN ORGANIC SEMICONDUCTOR DEVICE

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device used in a semiconductor manufacturing process, and more particularly, to an apparatus and method for heating a transport tube of vaporized material in an organic semiconductor device which is heated to maintain a uniform temperature distribution of the vaporized substance in the transport tube and the transport tube. It is about.

Conventionally, as an organic semiconductor manufacturing apparatus, the semiconductor chemical vapor deposition (CVD) apparatus is used as an evaporation substance heating apparatus and method in the organic semiconductor apparatus which forms a barrier metal layer, for example. In addition, when forming a barrier metal layer made of TiN, for example, a thermal CVD apparatus is also used. In these organic semiconductor manufacturing apparatuses, the transport line for supplying gas during the transfer from the organic chamber to the deposition chamber through the gas supply line should ensure that the material vaporized by the heater is heated above the vaporization temperature and maintained at a constant temperature. Castle is secured.

However, the processing gas for forming this vapor deposition film has a high temperature dependency on the film formation speed. In other words, when the processing gas is transferred through the transfer conduit in the thermal CVD apparatus forming the deposited film, the heat supply line itself connected to the transfer conduit is in contact with the outside, and thus heat loss is involved. That is, since the endothermic process is carried out to the transfer conduit, the heating supply line, and the chamber support frame or the clamp in contact with the transfer conduit, it is difficult to secure a predetermined conductance in the gas flow path, thereby making it difficult to form a nonuniform temperature distribution. Furthermore, in the thermal CVD apparatus, since the wafer W is only placed on the mounting target, if a constant temperature is not maintained, it causes contamination in the deposition processing chamber which performs post-processing, and damages each device in the wafer. There was a problem that causes a decrease in yield.

As a technique proposed in order to prevent damage to each device in the wafer as described above, the semiconductor forming apparatus technology of Tokyo Electron Co., Ltd., Japan, provides a heater device inside the chamber of the apparatus and on its wall to uniformly maintain the temperature of the processing gas. A method of employing the configuration described above is disclosed. However, even in this method, the heat loss on the gas supply line is inevitable, which leads to an uneven temperature supply.

As another technique, a semiconductor forming device means has been proposed by LAM Corp. of the United States. However, this technique also cannot ensure a certain conductance in the gas flow path as described above, and since the gas flow path is heated through radiant heat from the heating source or the backside gas, a uniform temperature distribution on the gas supply line is achieved. Not enough to provide.

Accordingly, an object of the present invention is that, in view of the above problems, when the organic material gas is transferred from the source supply apparatus through the transfer conduit, the heat loss of the organic gas flows below the reference temperature beyond the radiant heat from the heating source or the processing gas. A vaporizing material heating apparatus and method are provided in an organic semiconductor device which is not generated and is heated to maintain a uniform temperature distribution of a heating source with respect to a gas flow path in a vaporizing material conveying tube.

1 is a schematic plan view of a processing apparatus having an organic semiconductor device of the present invention,

2 is an enlarged cross-sectional view of a portion A in the transport pipe of FIG.

3 is a side view of the transportation pipe of FIG. 2;

4 is an enlarged cross-sectional view of a portion B of the connection portion of the transport pipe of FIG.

5 is a cross-sectional view extending in the longitudinal direction of the delivery pipe of FIG.

<Brief description of the main parts of the drawing>

102: treatment chamber

200: vaporized material transport pipe

210: heater inside the transport pipe

220: external heater pipe

230: thermal insulation area

260 exhaust pump

F: vaporization transport area

H, H ', H ": Heating area

This object is achieved by a vaporization material heating apparatus and method in the following organic semiconductor device. That is, the present invention provides an apparatus for heating a vaporized material in an organic semiconductor device, comprising: a container for forming a processing chamber in which an object is processed; a first heating device for heating an object installed in the processing chamber and mounted on a mounting table; A shower head heater for heating a processing gas for forming a high melting point metal film layer on a target object, a first gas supply unit for supplying a process chamber, and a heat conducting medium for transferring heat from the first gas supply unit to the process chamber. And an external heater used together with a transport pipe internal heater to maintain a constant internal temperature, and a vaporized material transport pipe having a thermal insulation region for forming a gas flow path between the transport pipe internal heater and the transport pipe external heater. It is characterized by.

EMBODIMENT OF THE INVENTION Hereinafter, with reference to an accompanying drawing, the preferable Example applied to the thermal CVD apparatus (henceforth a "CVD apparatus") concerning this invention is demonstrated.

1 to 5, the configuration of the CVD apparatus of this embodiment will be described.

First, with reference to FIG. 1, the whole structure of the CVD apparatus 100 is demonstrated. The processing chamber 102 of the CVD apparatus 100 is formed in the airtight processing chamber 104. On the side wall of the processing chamber 102, a first heating device 106 is mounted to heat the wall surface of the processing chamber 102 to a predetermined temperature. In addition, a shower head 107 extends above the processing container 104, and a heater 108 is installed in the shower head 107 to heat the gas supply 118 described later to a predetermined temperature. have. Moreover, the mounting part 112 supported by the support | pillar 110 is arrange | positioned in the process chamber 102, and it is provided so that the wafer W may be mounted in this mounting part 112. As shown in FIG. Here, the detailed structure of the mounting part 112 is mentioned later.

In addition, the gas supply part 118 is provided in the ceiling part of the process chamber 102. The gas supply unit 118 is a so-called showerhead type gas supply device, which diffuses the processing gas supplied from the gas supply source 128 through the on / off valve 124 and the flow rate control valve 122 in the gas diffusion chamber 120. Next, it is possible to uniformly supply the plurality of gas blowing holes 118a into the processing chamber 102.

In addition, a vacuum pump 130 for exhausting the interior of the processing chamber 102 is connected to the lower portion of the interior of the processing chamber 102 via the exhaust path 132. With this configuration, since the processing gas supplied into the processing chamber 102 is injected into the processing surface of the wafer W held by the mounting portion 112 and then exhausted through the periphery of the mounting table 114, the wafer W The processing gas can be uniformly supplied over the entire surface of the processing surface, and the uniform film forming process can be performed.

Next, the backside gas flow path will be described in detail with reference to FIG. 1. As described above, in the present embodiment, the clamp portion 116 must be isolated from the environment in the processing chamber 102 in an airtight manner. In addition, the clamp portion 116 must be indirectly heated by heating so that the temperature of the processing surface of the wafer W is not affected by the contact with the clamp portion 116. The clamp portion 116 can be heated with only radiant heat from the heating block 135, but by flowing a backside gas between the clamp portion 116 and the heating block 135, the clamp portion 116 is effectively and highly efficient. Can transfer heat.

The backside gas flow path is a gas flow path 152 formed between the support plate 134 and the mounting table 114 through a pipe 150 penetrating from the gas supply source 144 into the flow control valve 140 and the support 110. After the backside gas flowing into the mounting table 114 flows around the wafer W, the backside gas is guided around the wafer W and again, through the space formed between the heating block 135 and the clamp unit 116. It is secured to escape from the outer periphery. According to this embodiment, the following effects can be obtained by securing the backside gas flow path as described above.

Since the backside gas flows into the space formed between the heating block 135 and the clamp portion 116, the backside gas acts as a heat conducting medium, and thermal conduction is quickly performed from the heating block 135 to the clamp portion 116. Therefore, the clamp portion 116 can be quickly heated to a desired temperature.

In addition, as the backside gas, various gases can be employed depending on the type of treatment, but it is preferable that the backside gas has characteristics that are excellent in thermal conductivity and do not adversely affect the treatment performed in the treatment chamber 102. For example, an inert gas such as N 2 or Ar can be employed.

Next, temperature control of the clamp portion 116 will be described. The temperature of the wafer W is detected by a temperature sensor (not shown) installed in the heating device 146, and the temperature information is input to the heater controller 150. In addition, the heater controller 150 is installed in the heating apparatus 148 to compensate for the amount of heat lost from the wafer W to the clamp unit 116 so that the temperature distribution on the entire surface of the wafer W is uniform. The amount of heat generated by the heating device 148 is adjusted based on the temperature information from the temperature sensor, which is not used, and the clamp unit 116 is heated. By such a configuration, since the heat transferred from the wafer W to the clamp portion 116 and the heat transferred from the clamp portion 116 to the wafer W are substantially canceled, the wafer W is clamped to the clamp portion 116. Even if pressurized by, the heat of the wafer W is not lost beyond the clamp portion 116 as in the prior art, and the temperature distribution on the entire surface of the wafer W can be kept uniform. In addition, by a simple method, a temperature sensor is provided only in the heating device 148, and the clamp 116 is always kept at a higher temperature than the mounting table 114, so that the temperature of the wafer W can be made uniform. Do.

2 is an enlarged cross-sectional view of a portion A of the delivery pipe 200 of FIG.

In the embodiment of FIG. 2, when the processing gas is transferred from the source supply apparatus 300 through the transport pipe 200, the gaseous organic material 310 is heated by the transport pipe internal heater 210 and the external heater 220. do. Here, since the source supply device 300 uses the transport pipe inner heater 210 and the outer heater 220 together, no heat loss occurs in which the radiant heat is lowered below the reference temperature. In order to maintain a constant internal temperature of the gas vaporization material transport pipe 200 in the vaporization material transport pipe, the temperature of the vaporization material transport area F between the transport pipe internal heater 210 and the transport pipe external heater 220 is maintained. Maintaining the warming region 230 to keep warm. In addition, while maintaining the temperature of the vaporization material transport pipe 200 by exhausting the gas in the transport pipe 200 to be supplied into the process chamber 102 by the exhaust pump 260, the inside of the process chamber 102 is kept in a predetermined pressure atmosphere. Keep it. In addition, this thermal insulation area 230 is a vaporization material transport region (F) held from the heaters 210 and 220 of the vaporization material transport pipe 200 to the heating devices 146 and 148 shown in FIG. As can be seen, the heating areas H, H ', and H "which are divided into a plurality of areas, for example, divided into three areas are employed.

3 is a side view of the delivery pipe 200 of FIG. In Fig. 3, parts corresponding to Fig. 2 are given the same reference numerals. In addition, the thermal insulation region 230 is a thermal insulation region 240 is maintained between the inner heater 210 of the vaporization material transport pipe 200 and the outer heater 220 of the vaporization material transport pipe 200 is formed. Indicates.

4 is an enlarged cross-sectional view of a portion B of the connection portion of the transport pipe 200 of FIG. In FIG. 4, except that the clamp 300 is installed at the connection site, parts corresponding to FIG. 2 are given the same reference numerals. The clamp 300 has a structure connected using the clamp 300 for the transport pipe 200 or a structure of the same type for the maintenance of the transport pipe 200.

5 is a cross-sectional view extending in the longitudinal direction of the transport pipe 200 of FIG.

5, as described above, in order to maintain a constant internal temperature of the vaporization material transport pipe 200, the transport pipe internal heater 210 and the external heater 220 are used together, and the transport pipe internal heater 210 is used. ) And a heat insulation region 230 between the transport pipe and the external heater 220. The thermal insulation region 230 maintains a pressure of 10 ⁻¹ torr − 10 Torr by the exhaust pump 260 of FIG. 2. And this transport pipe 200 itself maintains a uniform temperature because it does not directly contact with the outside. The heat insulating area 230 is a heating area (H, consisting of three divided areas, for example, divided into a plurality of areas, for example, the vaporization material transport region F from the heating apparatus 146, 148 shown in FIG. H ', H ". The heating areas H, H', and H" are set to several temperature ranges for the gas delivery pipe 200 itself, whereby stable control of the vaporized material is possible.

Therefore, independent temperature control is possible for each of the heaters, so that partial temperature adjustment of the wafer W or the clamp portion 116 can be performed, thereby maintaining a more uniform temperature distribution on the entire surface of the wafer W. have. In addition, when the area heater is adopted, the heat generation efficiency can be improved as compared with the case of heating with one heater, so that the power consumption can be reduced. The number of heaters constituting the area heater is not limited to the above number, and an area heater composed of any number of heaters may be appropriately employed depending on the device configuration or the like.

As described above, in the present invention, since the inert gas is heated to a predetermined temperature while the wafer W is heated and pressed, the wafer W is pressed by the clamp portion 116 even when the wafer W is pressed. The temperature distribution on the entire surface of the treatment surface (W) can be maintained uniformly, and generation of foreign matters can be prevented.

As mentioned above, although preferred embodiment of this invention was described with reference to an accompanying drawing, this invention is not limited to this structure. Various changes and modifications can be devised by those skilled in the art in the scope of the technical idea described in the claims, and those modifications and modifications also belong to the technical scope of the present invention.

Claims (4)

In the device for heating the vaporized material in the organic semiconductor device, A container forming a processing chamber in which the object is processed; A first heating device for heating an object installed in the processing chamber and mounted on a mounting table, a shower head heater for heating a processing gas for forming a high melting point metal film layer on the object, and a supply for supplying the processing chamber. 1 gas supply unit and the vaporization material transport pipe, The vaporization material transport pipe acts as a heat conduction medium together with a transport pipe internal heater and the transport pipe internal heater to maintain a constant internal temperature while acting as a heat conducting medium for transferring heat from the first gas supply to the process chamber. And a heat insulating region for forming a gas flow path to maintain a constant internal temperature between the transport pipe inner heater and the transport pipe external heater. Heating device. The method of claim 1, And exhausting the flow path gas by means of an exhaust pump so as to maintain a constant temperature of the vaporization material transport pipe supplied into the processing chamber. The method of claim 1, The transport zone of the vaporizer transport pipe further comprises a heating zone divided into a plurality of zones to independently control the temperature of the vaporizer transport pipe heating apparatus. In the method of heating a vaporized material in an organic semiconductor device, Treating the object in a container forming a processing chamber, Heating an object installed in the processing chamber and mounted on a mounting portion by a first heating device; Supplying a processing gas into the processing chamber by a first gas supply unit for forming a high melting point metal film layer on the object; A transport pipe internal heater to act as a heat conduction medium for transferring heat from the first gas supply to the process chamber and to maintain a constant internal temperature, an external heater which acts as a heat conduction medium together with the transport pipe internal heater, An internal temperature is formed between the internal heating pipe and the external external heating pipe to form a gas flow path to maintain a constant internal temperature, and serves as a heat conducting medium for transferring heat from the vaporized material transport pipe to the clamp. Method of heating the transport pipe of the vaporized material in the organic semiconductor device characterized in that it comprises a temperature maintaining step of maintaining a constant.