KR100338585B1 - 이분산성침강실리카 - Google Patents
이분산성침강실리카 Download PDFInfo
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- KR100338585B1 KR100338585B1 KR19980037741A KR19980037741A KR100338585B1 KR 100338585 B1 KR100338585 B1 KR 100338585B1 KR 19980037741 A KR19980037741 A KR 19980037741A KR 19980037741 A KR19980037741 A KR 19980037741A KR 100338585 B1 KR100338585 B1 KR 100338585B1
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- precipitated silica
- silica
- minutes
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
- C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
- C01B33/187—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by acidic treatment of silicates
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
- C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
- C01B33/187—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by acidic treatment of silicates
- C01B33/193—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by acidic treatment of silicates of aqueous solutions of silicates
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/51—Particles with a specific particle size distribution
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/51—Particles with a specific particle size distribution
- C01P2004/53—Particles with a specific particle size distribution bimodal size distribution
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/19—Oil-absorption capacity, e.g. DBP values
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/20—Powder free flowing behaviour
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/90—Other properties not specified above
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Silicon Compounds (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
Claims (15)
- 하기 물리-화학적 변수를 특징으로 하는 침강 실리카.
- 알칼리 금속 실리케이트를 온도 60 내지 95℃ 및 pH 7.0 내지 11.0에서 연속적으로 교반하면서 무기산과 반응시키되, 반응은 고체 농도 40 내지 110g/ℓ 까지 계속시키고, pH를 3 내지 5의 값으로 조정하고, 침강 실리카를 여과 제거하여 세척한 다음, 건조시키고, 적합한 경우, 분쇄하거나 과립화하는 것을 특징으로 하는,하기 물리-화학적 변수를 갖는 침강 실리카의 제조방법.
- 제2항에 있어서, 고체 농도가 80g/ℓ 미만일 수 있고/있거나 온도가 80℃ 미만일 수 있고/있거나 침강 시간이 76분 미만일 수 있고/있거나 침강이 중단될 수 있고/있거나 묽은 또는 진한 무기산이 사용될 수 있는 방법.
- 제2항 또는 제3항에 있어서, 하기 조건을 유지시켜, BET 표면적이 120 내지140㎡/g이고 wk 계수가 3.4 미만인 침강 실리카를 제조하는 방법.1. 물유리와 황산을 15 내지 25분 동안 첨가2. 30 내지 90분 동안 첨가 중단3. 물유리와 황산을 50 내지 70분 동안 첨가하며,여기서 총 침강시간은 130분 내지 140분임
- 제2항 또는 제3항에 있어서, 하기 조건을 유지시켜, BET 표면적이 140 내지 160㎡/g이고 wk 계수가 3.4 미만인 침강 실리카를 제조하는 방법.물유리와 황산을 38 내지 50분 동안 첨가함
- 제2항 또는 제3항에 있어서, 하기 조건을 유지시켜, BET 표면적이 160 내지180㎡/g이고 wk 계수가 3.4 미만인 침강 실리카를 제조하는 방법.물유리와 황산을 150 내지 170분 동안 첨가함
- 제2항 또는 제3항에 있어서, 하기 조건을 유지시켜, BET 표면적이 180 내지 200㎡/g이고 wk 계수가 3.4 미만인 침강 실리카를 제조하는 방법.물유리와 황산을 60 내지 70분 동안 첨가함
- 제2항 또는 제3항에 있어서, 하기 조건을 유지시켜, BET 표면적이 200 내지 300㎡/g이고 wk 계수가 3.4 미만인 침강 실리카를 제조하는 방법.물유리와 황산을 60 내지 86분 동안 첨가함
- 제2항 또는 제3항에 있어서, 여과를 위해 챔버 필터 프레스 또는 멤브레인 필터 프레스 또는 벨트 필터 또는 회전 필터 또는 오토메틱 멤브레인 필터 프레스 또는 상기 필터중 두개가 병용된 필터를 사용하는 방법.
- 제2항 또는 제3항에 있어서, 건조를 위해 유동 건조기, 랙 건조기, 플래시 건조기, 스핀-플래시 건조기 또는 유사 장비를 사용하는 방법.
- 제2항 또는 제3항에 있어서, 액화된 여과 케이크를, 분무기 또는 2성분 노즐 또는 1성분 노즐 및/또는 통합 유동층이 구비된 분무 건조기에서 건조시키는 방법.
- 제2항 또는 제3항에 있어서, 과립화를 위해 롤러 콤펙터 또는 유사 장비를 사용하는 방법.
- 제1항에 있어서, 다음 화학식 1 내지 3의 오가노실란에 의해 표면적이 변형된 것을 특징으로 하는 침강 실리카.화학식 1[R1 n-(R0)3-nSi-(Alk)m-(Ar)p]q[B]화학식 2R1 n(R0)3-nSi-(알킬)화학식 3R1 n(R0)3-nSi-(알케닐)위의 화학식 1 내지 3에서,B는 -SCN, -SH, -Cl, -NH2(q가 1인 경우) 또는 -Sx-(q가 2인 경우)이고,R 및 R1은 탄소수 1 내지 4의 알킬 그룹 또는 페닐 라디칼로서 여기서 라디칼 R과 R1은 모두 각 경우에서 동일하거나 상이한 의미를 가질 수 있고,R은 C1-4-알킬 또는 C1-4-알콕시 그룹이고,n은 0, 1 또는 2이고,Alk는 탄소수 1 내지 6의 2가 직쇄 또는 측쇄 탄화수소 라디칼이고,m은 0 또는 1이고,Ar은 탄소수 6 내지 12의 아릴렌 라디칼이고,p는 0 또는 1로서 단 p와 n은 동시에 0이 아니고,x는 2 내지 8의 수이고,알킬은 탄소수 1 내지 20의 1가 직쇄 또는 측쇄의 불포화 탄화수소 라디칼이며,알케닐은 탄소수 2 내지 20의 1가 직쇄 또는 측쇄의 불포화 탄화수소 라디칼임
- 침강 실리카 100부를 기준으로 하여, 0.5 내지 50부로 혼합되어 있는 오가노실란으로 침강실리카를 변형시키되, 침강 실리카와 오가노실란과의 반응이, 상기 혼합물을 제조하는 동안 동일 반응계로 수행되거나, 분무후 혼합물을 열처리하거나 실란과 실리카 현탁액을 혼합한 다음 건조시켜 열처리함으로써 외부적으로 수행됨을 특징으로 하는, 제13항에 따르는 실리카의 제조방법.
- 하기 물리-화학적 변수를 갖는 제1항에 따르는 침강 실리카를 충진제로서 포함하는 가황성 고무 혼합물 및 가황 고무.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19740440.5 | 1997-09-15 | ||
DE19740440A DE19740440A1 (de) | 1997-09-15 | 1997-09-15 | Leicht dispergierbare Fällungskieselsäure |
Publications (2)
Publication Number | Publication Date |
---|---|
KR19990029762A KR19990029762A (ko) | 1999-04-26 |
KR100338585B1 true KR100338585B1 (ko) | 2002-11-22 |
Family
ID=7842342
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR19980037741A KR100338585B1 (ko) | 1997-09-15 | 1998-09-14 | 이분산성침강실리카 |
Country Status (13)
Country | Link |
---|---|
US (1) | US6180076B1 (ko) |
EP (1) | EP0901986B1 (ko) |
JP (2) | JP3795237B2 (ko) |
KR (1) | KR100338585B1 (ko) |
AT (1) | ATE212954T1 (ko) |
BR (1) | BR9803966A (ko) |
DE (2) | DE19740440A1 (ko) |
DK (1) | DK0901986T3 (ko) |
ES (1) | ES2141693T3 (ko) |
PL (1) | PL194576B1 (ko) |
PT (1) | PT901986E (ko) |
TR (1) | TR199801831A2 (ko) |
TW (1) | TW446683B (ko) |
Cited By (1)
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DE4423493A1 (de) * | 1993-08-07 | 1995-02-09 | Degussa | Verfahren zur Herstellung einer Fällungskieselsäure |
DK0643015T3 (da) | 1993-08-07 | 1996-12-23 | Degussa | Fremgangsmåde til fremstilling af fældningskiselsyre |
DE4427137B4 (de) * | 1993-10-07 | 2007-08-23 | Degussa Gmbh | Fällungskieselsäure |
US5846506A (en) | 1994-10-07 | 1998-12-08 | Degussa Aktiengesellschaft | Precipitated silicas |
IN188702B (ko) | 1995-06-01 | 2002-10-26 | Degussa | |
DE19526476A1 (de) | 1995-07-20 | 1997-01-23 | Degussa | Fällungskieselsäure |
DE19527278A1 (de) | 1995-07-26 | 1997-01-30 | Degussa | Fällungskieselsäure |
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1997
- 1997-09-15 DE DE19740440A patent/DE19740440A1/de not_active Ceased
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1998
- 1998-08-28 DK DK98116279T patent/DK0901986T3/da active
- 1998-08-28 DE DE59803001T patent/DE59803001D1/de not_active Expired - Lifetime
- 1998-08-28 PT PT98116279T patent/PT901986E/pt unknown
- 1998-08-28 ES ES98116279T patent/ES2141693T3/es not_active Expired - Lifetime
- 1998-08-28 EP EP98116279A patent/EP0901986B1/de not_active Expired - Lifetime
- 1998-08-28 AT AT98116279T patent/ATE212954T1/de not_active IP Right Cessation
- 1998-09-10 TW TW087115100A patent/TW446683B/zh not_active IP Right Cessation
- 1998-09-14 KR KR19980037741A patent/KR100338585B1/ko not_active IP Right Cessation
- 1998-09-14 BR BR9803966-0A patent/BR9803966A/pt not_active Application Discontinuation
- 1998-09-14 JP JP26027698A patent/JP3795237B2/ja not_active Expired - Lifetime
- 1998-09-14 PL PL328556A patent/PL194576B1/pl unknown
- 1998-09-15 US US09/153,232 patent/US6180076B1/en not_active Expired - Lifetime
- 1998-09-15 TR TR1998/01831A patent/TR199801831A2/xx unknown
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Cited By (1)
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---|---|---|---|---|
WO2009041752A1 (en) * | 2007-09-28 | 2009-04-02 | Il Shin Chemical Co., Ltd. | Method of fabricating superhydrophobic silica chain powders |
Also Published As
Publication number | Publication date |
---|---|
EP0901986A1 (de) | 1999-03-17 |
PL328556A1 (en) | 1999-03-29 |
JP2006117531A (ja) | 2006-05-11 |
ATE212954T1 (de) | 2002-02-15 |
PT901986E (pt) | 2002-07-31 |
DE59803001D1 (de) | 2002-03-21 |
TR199801831A3 (tr) | 1999-10-21 |
DE19740440A1 (de) | 1999-03-18 |
ES2141693T1 (es) | 2000-04-01 |
TR199801831A2 (xx) | 1999-10-21 |
JPH11157826A (ja) | 1999-06-15 |
PL194576B1 (pl) | 2007-06-29 |
JP3795237B2 (ja) | 2006-07-12 |
TW446683B (en) | 2001-07-21 |
EP0901986B1 (de) | 2002-02-06 |
ES2141693T3 (es) | 2002-09-16 |
BR9803966A (pt) | 1999-12-07 |
KR19990029762A (ko) | 1999-04-26 |
US6180076B1 (en) | 2001-01-30 |
DK0901986T3 (da) | 2002-05-21 |
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