KR100336764B1 - Pad structure for chemical mechanical polishing - Google Patents
Pad structure for chemical mechanical polishing Download PDFInfo
- Publication number
- KR100336764B1 KR100336764B1 KR1019990045586A KR19990045586A KR100336764B1 KR 100336764 B1 KR100336764 B1 KR 100336764B1 KR 1019990045586 A KR1019990045586 A KR 1019990045586A KR 19990045586 A KR19990045586 A KR 19990045586A KR 100336764 B1 KR100336764 B1 KR 100336764B1
- Authority
- KR
- South Korea
- Prior art keywords
- pad
- polishing
- chemical mechanical
- slurry
- hole
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 27
- 239000000126 substance Substances 0.000 title claims abstract description 9
- 239000002002 slurry Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 abstract description 4
- 238000009499 grossing Methods 0.000 abstract 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
본 발명은 화학 기계적 연마용 패드의 구조에 관한 것으로, 종래의 기술에 있어서는 패드의 홀과 홀 사이의 홈(groove)의 깊이가 경사없이 연결되어 있기 때문에 홈(groove)내에 함유할 수 있는 연마용 슬러리의 양이 적거나 홀과 홀의 정 중앙에는 없을 수도 있게 되어 이럴 경우 연마(CMP) 공정의 연마율(removal rate)이 저하하거나 비균질성(Non-uniformity)의 상승으로 이어질 수 있는 문제점이 있었다. 따라서, 본 발명은 패드의 홀과 홀 사이의 홈(groove)을 역 아치형으로 파이게 만듦으로써, 슬러리의 이동을 원활하게 하고, 함유량을 증가시켜 연마율과 균질성을 향상시킬 수 있도록 하는 화학 기계적 연마용 패드의 구조.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a chemical mechanical polishing pad. In the related art, the depth of a groove between a hole and a hole of the pad is connected without an inclination so that the polishing can be contained in a groove. The amount of slurry may be small or may not exist in the center of the hole and the hole, and in this case, the polishing rate of the polishing (CMP) process may be lowered or the non-uniformity may be increased. Accordingly, the present invention provides a chemical mechanical polishing that makes the slurry between the holes and the holes of the pads inverted in an arc, thereby smoothing the movement of the slurry and increasing the content to improve the polishing rate and homogeneity. The structure of the pad.
Description
본 발명은 화학 기계적 연마용 패드의 구조에 관한 것으로, 특히 패드의 홈(groove)을 곡면으로 개조함으로써 화학 기계적 연마(CMP)시 슬러리(Slurry)의 유동량과 유동성을 향상시킬 수 있도록 하는 화학 기계적 연마용 패드의 구조에 관한 것이다.The present invention relates to a structure of a chemical mechanical polishing pad, and in particular, by modifying the groove of the pad to a curved surface, the chemical mechanical polishing to improve the flow rate and fluidity of the slurry during chemical mechanical polishing (CMP) It relates to the structure of a pad for use.
도1은 종래 웨이퍼 연마용 패드의 개략적인 모양을 보인 예시도로서, 도 1a는 상측에서 바라본 구조로 이에 도시된 바와 같이 패드의 상측에는 격자형태로 홈(groove)이 파여져 있고, 슬러리가 나올 수 있는 홀(hole)들이 뚫어져 있다.Figure 1 is an exemplary view showing a schematic shape of a conventional wafer polishing pad, Figure 1a is a structure viewed from the upper side as shown in the grooves (groove) in the lattice shape is formed on the upper side of the pad, the slurry may come out Holes are open.
도 1b는 상기 패드의 측면에서 바라본 단면도로서, 패드의 홀과 홀 사이의 홈(groove)의 깊이가 경사없이 연결되어 있는 구조로 되어있다.FIG. 1B is a cross-sectional view of the pad, in which the depth of the groove between the pad and the hole is connected without inclination.
이에 따라 웨이퍼를 연마(CMP)하기 위해 각 홀에서 슬러리가 흘러나와 홈을 따라서 패드 전면에 골고루 퍼지도록 되어 있다.As a result, the slurry flows from each hole in order to grind the wafer (CMP), and is evenly spread on the entire surface of the pad along the groove.
따라서, 웨이퍼는 상기 패드면에 마주보고 접촉되어서 골고루 연마하도록 되어 있다.Therefore, the wafer is in contact with the pad surface so as to evenly polish.
그러나, 상기 종래의 기술에 있어서는 패드의 홀과 홀 사이의 홈(groove)의 깊이가 경사없이 연결되어 있기 때문에 홈(groove)내에 함유할 수 있는 연마용 슬러리의 양이 적거나 홀과 홀의 정 중앙에는 없을 수도 있게 되어 이럴 경우 연마(CMP) 공정의연마율(removal rate)이 저하하거나 비균질성(Non-uniformity)의 상승으로 이어질 수 있는 문제점이 있었다.However, in the above conventional technique, since the depth of the groove between the hole of the pad and the hole is connected without inclination, the amount of the polishing slurry that can be contained in the groove is small or the center of the hole and the hole is small. In this case, there was a problem that the polishing rate of the polishing (CMP) process may be lowered or the non-uniformity may be increased.
따라서, 본 발명은 상기와 같은 종래의 문제점을 해결하기 위하여 창출한 것으로, 패드의 홀과 홀 사이의 홈(groove)을 역 아치형으로 파이게 만듦으로써, 슬러리의 이동을 원활하게 하고, 함유량을 증가시켜 연마율과 균질성을 향상시킬 수 있도록 하는 화학 기계적 연마용 패드의 구조를 제공함에 그 목적이 있다.Accordingly, the present invention has been made to solve the above-mentioned conventional problems, and by making the groove between the hole of the pad and the hole in an inverted arc shape, smooth the movement of the slurry and increase the content. It is an object of the present invention to provide a structure of a chemical mechanical polishing pad to be able to improve the polishing rate and homogeneity.
도 1은 종래 웨이퍼 연마용 패드의 개략적인 모양을 보인 예시도.1 is an exemplary view showing a schematic shape of a conventional wafer polishing pad.
도 2는 본 발명에 의한 웨이퍼 연마용 패드의 단면도.2 is a cross-sectional view of a wafer polishing pad according to the present invention.
이와 같은 목적을 달성하기 위한 본 발명은 웨이퍼 연마용 슬러리가 이동할 수 있도록 파여진 홈을 역 아치형으로 하는 것을 특징으로 한다.The present invention for achieving the above object is characterized in that the grooves excavated so that the slurry for wafer polishing can move.
이하, 본 발명에 따른 일실시예를 첨부한 도면을 참조하여 상세히 설명하면 다음과 같다.Hereinafter, an embodiment according to the present invention will be described in detail with reference to the accompanying drawings.
도 2은 본 발명에 의한 웨이퍼 연마용 패드의 단면도로서, 이에 도시한 바와 같이 패드의 홀과 홀 사이의 홈(groove)을 역 아치형으로 파여져 있다.Fig. 2 is a cross-sectional view of a wafer polishing pad according to the present invention, in which grooves between the holes of the pads and the holes are excavated in an inverted arc shape.
이와 같이 홈이 파여짐으로써 홈안에 슬러리의 함유량을 증가시킬 수 있게 된다.As the grooves are dug in this way, the content of the slurry in the grooves can be increased.
이하 웨이퍼를 연마하는 과정은 종래와 같다.Hereinafter, the process of polishing the wafer is the same as in the prior art.
즉, 웨이퍼를 연마(CMP)하기 위해 각 홀에서 슬러리가 흘러나와 홈을 따라서 패드 전면에 골고루 퍼지도록 되어 있다.That is, in order to grind the wafer (CMP), a slurry flows out of each hole and is evenly spread along the groove along the groove.
따라서, 웨이퍼는 상기 패드면에 마주보고 접촉되어서 골고루 연마하도록 되어 있다.Therefore, the wafer is in contact with the pad surface so as to evenly polish.
이상에서 설명한 바와 같이 본 발명 화학 기계적 연마용 패드의 구조는 패드의 홀과 홀 사이의 홈(groove)을 역 아치형으로 만듦으로써 홈내의 연마용 슬러리의 함유량을 증가시키고, 홀과 홀 사이의 홈의 정 중앙으로 슬러리의 유동성을 증가시킴으로써 연마(CMP) 공정에서의 연마율과 균질성을 향상시킬 수 있는 효과가 있다.As described above, the structure of the chemical mechanical polishing pad of the present invention increases the content of the polishing slurry in the grooves by making the grooves between the holes and the holes of the pads in an arcuate shape. By increasing the fluidity of the slurry to the center, there is an effect that can improve the polishing rate and homogeneity in the polishing (CMP) process.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990045586A KR100336764B1 (en) | 1999-10-20 | 1999-10-20 | Pad structure for chemical mechanical polishing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990045586A KR100336764B1 (en) | 1999-10-20 | 1999-10-20 | Pad structure for chemical mechanical polishing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20010037856A KR20010037856A (en) | 2001-05-15 |
| KR100336764B1 true KR100336764B1 (en) | 2002-05-16 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019990045586A KR100336764B1 (en) | 1999-10-20 | 1999-10-20 | Pad structure for chemical mechanical polishing |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100336764B1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7442116B2 (en) * | 2003-11-04 | 2008-10-28 | Jsr Corporation | Chemical mechanical polishing pad |
-
1999
- 1999-10-20 KR KR1019990045586A patent/KR100336764B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010037856A (en) | 2001-05-15 |
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