KR100261539B1 - Organic light emitting device having good stability - Google Patents
Organic light emitting device having good stability Download PDFInfo
- Publication number
- KR100261539B1 KR100261539B1 KR1019970074297A KR19970074297A KR100261539B1 KR 100261539 B1 KR100261539 B1 KR 100261539B1 KR 1019970074297 A KR1019970074297 A KR 1019970074297A KR 19970074297 A KR19970074297 A KR 19970074297A KR 100261539 B1 KR100261539 B1 KR 100261539B1
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- emitting device
- organic light
- formula
- hole transport
- Prior art date
Links
- 239000000463 material Substances 0.000 claims abstract description 23
- 229920000642 polymer Polymers 0.000 claims abstract description 22
- 239000004642 Polyimide Substances 0.000 claims abstract description 13
- 229920001721 polyimide Polymers 0.000 claims abstract description 13
- 230000005525 hole transport Effects 0.000 claims description 24
- 229920001601 polyetherimide Polymers 0.000 claims description 16
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 claims description 13
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 9
- 229910052731 fluorine Inorganic materials 0.000 claims description 9
- 239000011737 fluorine Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 229920005569 poly(vinylidene fluoride-co-hexafluoropropylene) Polymers 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 125000002524 organometallic group Chemical group 0.000 claims description 4
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 claims description 3
- 239000007983 Tris buffer Substances 0.000 claims description 3
- 239000004697 Polyetherimide Substances 0.000 claims 2
- FJNCXZZQNBKEJT-UHFFFAOYSA-N 8beta-hydroxymarrubiin Natural products O1C(=O)C2(C)CCCC3(C)C2C1CC(C)(O)C3(O)CCC=1C=COC=1 FJNCXZZQNBKEJT-UHFFFAOYSA-N 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract description 23
- 239000010408 film Substances 0.000 abstract 7
- 108091006149 Electron carriers Proteins 0.000 abstract 4
- 239000012876 carrier material Substances 0.000 abstract 2
- 229920002313 fluoropolymer Polymers 0.000 abstract 2
- 239000004811 fluoropolymer Substances 0.000 abstract 2
- 239000005357 flat glass Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 7
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000007787 solid Substances 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 238000004770 highest occupied molecular orbital Methods 0.000 description 3
- 239000002861 polymer material Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 2
- 238000000103 photoluminescence spectrum Methods 0.000 description 2
- -1 poly (p-phenylene vinylene) Polymers 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- PRGAWFXXABCMIW-UHFFFAOYSA-L magnesium;quinolin-8-olate Chemical compound [Mg+2].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 PRGAWFXXABCMIW-UHFFFAOYSA-L 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- HTPBWAPZAJWXKY-UHFFFAOYSA-L zinc;quinolin-8-olate Chemical compound [Zn+2].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 HTPBWAPZAJWXKY-UHFFFAOYSA-L 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
본 발명은 안정성이 우수한 유기발광소자에 관한 것으로, 상세하게는 양극 전극, 정공수송층, 발광/전자수송층 및 음극을 포함하는 유기발광소자에 있어서 정공수송층이 정공수송 물질 및 불소 고분자를 포함하고 발광/전자수송층이 유기금속 발광물질 및 폴리이미드를 포함하는 것을 특징으로 한다.The present invention relates to an organic light emitting device having excellent stability, and more particularly, in an organic light emitting device including an anode electrode, a hole transport layer, a light emitting / electron transporting layer, and a cathode, the hole transporting layer includes a hole transporting material and a fluorine polymer. The electron transport layer is characterized in that it comprises an organometallic light emitting material and polyimide.
종래의 유기전기발광소자로는 양극과 음극사이에 (1) 단분자 발광층을 가지는 소자, (2) 단분자 정공수송층과 단분자 발광/전자수송층을 가지는 소자, (3) 고분자 발광층을 가지는 소자, (4) 고분자 정공수송층과 고분자 발광/전자수송층을 가지는 소자, (5) 고분자 정공수송/발광층과 고분자 전자수송층을 가지는 소자, (6) 이외 유기박막 다층구조를 가지는 소자가 있다.Conventional organic electroluminescent devices include (1) a device having a monomolecular emission layer between an anode and a cathode, (2) a device having a monomolecular hole transport layer and a monomolecular emission / electron transport layer, (3) a device having a polymer light emitting layer, (4) a device having a polymer hole transport layer and a polymer light emitting / electron transport layer, (5) a device having a polymer hole transport / light emitting layer and a polymer electron transport layer, and a device having an organic thin film multilayer structure other than (6).
이중 정공수송층, 발광층, 전자수송층이 단분자 물질로 진공증착된 소자는 결정화 등과 같은 열화현상에 의해 소자의 안정성이 매우 저하되어 있고, 고분자 물질을 포함하는 소자도 폴리(p-페닐렌 비닐렌)(PPV) 계열을 사용함으로써 안정성 문제를 해결하지 못하고 있다.In the device in which the double hole transport layer, the light emitting layer, and the electron transport layer are vacuum-deposited with a monomolecular material, the stability of the device is very deteriorated due to deterioration such as crystallization, and the device including the polymer material is also poly (p-phenylene vinylene). The use of the (PPV) family does not solve the stability problem.
따라서 본 발명의 목적은 안정성이 우수한 유기발광소자를 제공하는 것이다.Accordingly, an object of the present invention is to provide an organic light emitting device having excellent stability.
도 1은 본 발명의 유기발광소자의 구조를 나타내고,1 shows a structure of an organic light emitting device of the present invention,
도 2a와 2b는 각각 본 발명의 유기발광소자의 전압 인가 전과 후의 에너지 띠 구조를 나타내고,2A and 2B show energy band structures before and after voltage application of the organic light emitting diode of the present invention, respectively.
도 3은 Alq3 진공증착 박막과 Alq3/PEI 박막의 광발광 스펙트럼을 나타내고,Figure 3 shows the photoluminescence spectrum of the Alq3 vacuum deposition thin film and Alq3 / PEI thin film,
도 4a와 4b는 본 발명의 유기발광소자의 인가전압에 따른 유기발광소자의 전류밀도의 변화를 나타내고,4a and 4b show the change in current density of the organic light emitting device according to the applied voltage of the organic light emitting device of the present invention,
도 5a와 5b는 본 발명의 유기발광소자의 인가전압에 따른 전기발광강도의 변화를 나타내고,5a and 5b show the change in the electroluminescence intensity according to the applied voltage of the organic light emitting device of the present invention,
도 6은 본 발명의 유기발광소자의 전류밀도에 따른 전기발광강도의 변화를 나타낸다.6 shows a change in electroluminescence intensity according to the current density of the organic light emitting device of the present invention.
상기 목적을 달성하기 위하여 본 발명에서는, 양극 전극, 정공수송층, 발광/전자수송층 및 음극을 포함하는 유기발광소자에 있어서 정공수송층이 정공수송 물질 및 불소 고분자를 포함하고 발광/전자수송층이 유기금속 발광물질 및 폴리이미드를 포함하는 것을 특징으로 하는 소자를 제공한다.In order to achieve the above object, in the present invention, in the organic light emitting device comprising an anode electrode, a hole transport layer, a light emitting / electron transport layer and a cathode, the hole transport layer comprises a hole transport material and a fluorine polymer, the light emitting / electron transport layer is an organic metal light emitting Provided is a device comprising a material and a polyimide.
이하 본 발명의 유기발광소자에 대하여 상세히 설명한다.Hereinafter, the organic light emitting diode of the present invention will be described in detail.
본 발명에서의 유기발광소자는 유리-ITO 기판위에 유기물질로 된 정공수송층, 발광/전자수송층 및 전자수송전극을 기본으로 포함하며, 안정성 도모를 위해 정공수송층과 발광/전자수송층에 호스트-게스트 시스템을 적용하였다.The organic light emitting device according to the present invention includes a hole transport layer, a light emitting / electron transporting layer and an electron transporting electrode made of organic materials on a glass-ITO substrate, and a host-guest system in the hole transporting layer and the light emitting / electron transporting layer for stability. Was applied.
본 발명의 발광소자에서 호스트-게스트 시스템이 적용되는 정공수송층은 호스트로 사용되는 고분자 물질로서 불소 고분자와 게스트인 정공수송물질이 균일하게 혼합된 박막을 이루게 되고, 또다른 호스트-게스트 시스템이 적용되는 발광/전자수송층은 호스트로 사용되는 고분자 물질로서 폴리이미드와 발광특성 뿐 아니라 전자전달 특성도 함께 갖는 유기금속 발광물질이 균일하게 혼합된 박막을 이루게 된다.In the light emitting device of the present invention, the hole transport layer to which the host-guest system is applied forms a thin film in which a fluorine polymer and a guest hole transport material are uniformly mixed as a polymer material used as a host, and another host-guest system is applied. The light emitting / electron transport layer is a polymer material used as a host to form a thin film in which polyimide and an organometallic light emitting material having not only light emitting characteristics but also electron transfer characteristics are uniformly mixed.
정공수송 물질로는 하기 구조식 (I)의 N,N'-디페닐-N,N'-디(m-톨릴)벤지딘(TPD), 4,4',4"-트리스(3-메틸페닐-페닐아미노)트리페닐아민(MTDATA), 폴리(9-비닐카바졸) 등이 있으며, TPD가 바람직하다.Examples of the hole transport material include N, N'-diphenyl-N, N'-di (m-tolyl) benzidine (TPD), 4,4 ', 4' '-tris (3-methylphenyl-phenyl) Amino) triphenylamine (MTDATA), poly (9-vinylcarbazole), and the like, with TPD being preferred.
불소 고분자로는 하기 구조식 (II)의 반복단위를 가지는 폴리(비닐리덴 플루오라이드-코-헥사플루오로프로필렌)(PVdF-HFP) 또는 폴리(비닐리덴 플루오라이드)(PVdF) 이다.The fluorine polymer is poly (vinylidene fluoride-co-hexafluoropropylene) (PVdF-HFP) or poly (vinylidene fluoride) (PVdF) having a repeating unit of the following structural formula (II).
또한 본 발명에 사용되는 전자수송 특성을 가지는 발광물질로는 하기 구조식 (III)의 트리스(8-하이드록시퀴놀리나토)알루미늄(Alq3), 비스(8-하이드록시퀴놀리나토)아연(II)(Znq2), 비스(8-하이드록시퀴놀리나토)베릴륨(II)(Beq2), 비스(8-하이드록시퀴놀리나토)마그네슘(Mgq2), 비스(8-하이드록시-2-메틸퀴놀리나토)아연(II)(ZnMq2), 비스(8-하이드록시-2-퀴놀리나토)베릴륨(BeMq2), 비스(8-하이드록시-2-프로필퀴놀리나토)알루미늄(AlPrq2) 등이 있으며, 이중에서 Alq3가 바람직하다.In addition, as a light emitting material having an electron transporting property used in the present invention, tris (8-hydroxyquinolinato) aluminum (Alq3), bis (8-hydroxyquinolinato) zinc (II) of formula (III) (Znq2), bis (8-hydroxyquinolinato) beryllium (II) (Beq2), bis (8-hydroxyquinolinato) magnesium (Mgq2), bis (8-hydroxy-2-methylquinolinato Zinc (II) (ZnMq2), bis (8-hydroxy-2-quinolinato) beryllium (BeMq2), bis (8-hydroxy-2-propylquinolinato) aluminum (AlPrq2), and the like. Alq3 is preferred.
발광/전자수송층에 사용되는 폴리이미드로는 하기 구조식 (IV)의 반복단위를 가지는 폴리(에테르이미드)(PEI)가 있다.Examples of the polyimide used for the light emitting / electron transport layer include poly (etherimide) (PEI) having a repeating unit represented by the following structural formula (IV).
본 발명의 소자는 다음과 같이 제조될 수 있다.The device of the present invention can be manufactured as follows.
정공수송 물질을 불소 고분자에 용매를 사용하여 무게비 5 : 95 내지 60 : 40, 바람직하게는 30 : 70으로 분자수준으로 분산시킨 용액을 제조한다. 이때 고형분 함량은 0.2 내지 10 중량%, 바람직하게는 0.3 중량%이고, 용매로는 디메틸아세트아미드, N-메틸-2-피롤리돈, 테트라하이드로푸란 또는 아세톤이 사용될 수 있다. 이 용액을 유리-ITO 기판위에 코팅하여 고분자 정공수송층 박막을 제조한다. 코팅 방법으로는 스핀-코팅, 닥터-블레이딩(Doctor-blading) 또는 스크린 프린팅(Screen Printing) 등의 방법이 사용될 수 있으며, 바람직하게는 1,000 내지 5,000 rpm에서 1 내지 5 분 동안 스핀-코팅하는 것이고, 더욱 바람직하게는 3,000rpm에서 3분동안 스핀-코팅하는 것이다. 코팅된 박막을 40 내지 90℃에서 30분 이상 건조시킨다.A hole transport material is prepared by dispersing a molecular weight at a weight ratio of 5:95 to 60:40, preferably 30:70 using a solvent in a fluorine polymer. In this case, the solid content is 0.2 to 10% by weight, preferably 0.3% by weight, and dimethylacetamide, N-methyl-2-pyrrolidone, tetrahydrofuran or acetone may be used as the solvent. The solution is coated on a glass-ITO substrate to prepare a polymer hole transport layer thin film. As the coating method, a method such as spin-coating, doctor-blading or screen printing may be used, and preferably spin-coating for 1 to 5 minutes at 1,000 to 5,000 rpm. More preferably, spin-coating for 3 minutes at 3,000 rpm. The coated thin film is dried at 40 to 90 ° C. for at least 30 minutes.
이어서, 유기금속 발광물질을 가용성 폴리이미드에 클로로포름과 같은 용매를 사용하여 무게비 5 : 95 내지 75 : 25, 바람직하게는 70 : 30로 분자수준으로 분산시킨 용액을 제조한다. 이때, 고형분 함량은 0.5 내지 10 중량%, 바람직하게는 0.5중량%이다. 이 용액을 상기 정공수송층 박막위에 코팅하여, 고분자 정공수송층과 고분자 전자수송층의 이중고분자층 박막을 제조한다. 코팅 및 건조 방법은 정공수송 박막의 경우에서와 동일하다.Subsequently, a solution in which the organometallic luminescent material is dispersed at a molecular level in a weight ratio of 5:95 to 75:25, preferably 70:30 in a soluble polyimide using a solvent such as chloroform is prepared. At this time, the solid content is 0.5 to 10% by weight, preferably 0.5% by weight. The solution is coated on the hole transport layer thin film to prepare a double polymer layer thin film of a polymer hole transport layer and a polymer electron transport layer. Coating and drying methods are the same as in the case of hole transport thin films.
상기 이중층 박막위에 0.5 내지 1 ㎚/sec의 속도로 금속을 진공증착시켜 최종 금속층의 두께가 300 내지 500㎚, 바람직하게는 400㎚가 되도록 한다. 이때 금속으로는 알루미늄, 은, 칼슘, 마그네슘, 구리 및 이들 금속들의 합금을 사용할 수 있다.The metal is vacuum deposited on the bilayer thin film at a rate of 0.5 to 1 nm / sec so that the thickness of the final metal layer is 300 to 500 nm, preferably 400 nm. In this case, aluminum, silver, calcium, magnesium, copper and alloys of these metals may be used.
본 발명의 소자위에 추가로 보호/전도층을 증착할 수도 있다.Further protective / conductive layers may be deposited on the devices of the present invention.
상기와 같이 제작된 소자의 개략적인 구조는 도 1에 나타낸 바와 같이, 유리(a), ITO 층(b), 정공수송층(c), 발광/전자수송층(d), 및 음극(e)으로 이루어진다.As shown in FIG. 1, the schematic structure of the device manufactured as described above is composed of a glass (a), an ITO layer (b), a hole transport layer (c), a light emitting / electron transport layer (d), and a cathode (e). .
이하 본 발명을 실시예에 의하여 상세히 설명하나, 본 발명의 내용이 이에 한정되는 것은 아니다.Hereinafter, the present invention will be described in detail by way of examples, but the content of the present invention is not limited thereto.
실시예Example
미리 준비한 유리-ITO 기판위에 TPD를 PVdF-HFP에 디메틸아세트아미드를 사용하여 무게비 30:70(TPD:PVdF-HFP)로 분산시킨 용액(고형분 약 0.3 중량% 함유)을 3,000 rpm에서 3 분 동안 스핀코팅한 후, 50℃에서 1 시간 동안 건조시켰다.Spin a solution (containing about 0.3 wt% solids) of TPD dispersed in a weight ratio of 30:70 (TPD: PVdF-HFP) by using dimethylacetamide in PVdF-HFP on a glass-ITO substrate prepared in advance for 3 minutes at 3,000 rpm. After coating, it was dried at 50 ° C. for 1 hour.
이어서 Alq3를 PEI에 클로로포름을 사용하여 무게비 70:30(Alq3:PEI)로 분산시킨 용액(고형분 함량 약 0.5 중량% 함유)을 상기 TPD/PVdF-HFP 박막위에 3,000 rpm에서 3 분 동안 스핀코팅한 후, 50℃에서 1 시간 동안 건조시켰다.Subsequently, a solution in which Alq3 was dispersed in PEI using chloroform in a weight ratio of 70:30 (Alq3: PEI) (containing about 0.5 wt% of solid content) was spin-coated on the TPD / PVdF-HFP thin film at 3,000 rpm for 3 minutes. And dried at 50 ° C. for 1 hour.
다시 이 기판을 진공챔버에 넣고 알루미늄을 10-6torr에서 진공증착하여 최종 두께 400 nm인 유기발광소자를 제작하였다.The substrate was placed in a vacuum chamber and aluminum was vacuum deposited at 10 −6 torr to produce an organic light emitting diode having a final thickness of 400 nm.
상기와 같이 제작한 유기발광소자에 직류전압을 인가하기 전과 후의 에너지 띠 구조를 관찰하였으며 이를 각각 도 2a와 2b에 나타내었다. 점선은 예측되는 최고 점유 분자 오비탈(Highest Occupied Molecular Orbital(HOMO)) 준위이다. 여기에서 보듯이 소자에 직류전압을 인가하지 않았을 때는 도 2a에서처럼 HOMO 및 LUMO 에너지 상태가 평행한 구조로 있다가, 전압을 인가하게 되면 도 3b에서처럼 에너지 띠 구조가 경사진 구조로 변하여, 알루미늄 전극(음극)에서는 전자가, ITO 전극(양극)에서는 정공이 유기 박막 쪽으로 주입된다. 음극에서 주입된 전자의 대부분은 TPD/PVdF-HFP 층의 높은 LUMO 에너지 준위 때문에 유기 박막계면에 축적되고, 양극에서 주입된 정공은 HOMO 준위를 지나서 Alq3/PEI 층의 HOMO 준위쪽으로 약간 감속되어 이동하여서, 궁극적으로 Alq3/PEI 층 박막 내부에서 이미 축적된 전자와 재결합을 하여 빛을 내게된다.The energy band structures before and after applying the DC voltage to the organic light emitting diodes manufactured as described above were observed and shown in FIGS. 2A and 2B, respectively. The dashed line is the highest Occupied Molecular Orbital (HOMO) level expected. As shown here, when the DC voltage is not applied to the device, as shown in FIG. 2A, the HOMO and LUMO energy states are parallel, but when the voltage is applied, the energy band structure is changed to the inclined structure as shown in FIG. 3B. Electrons are injected from the cathode) and holes are injected into the organic thin film from the ITO electrode (anode). Most of the electrons injected from the cathode accumulate in the organic thin film interface due to the high LUMO energy level of the TPD / PVdF-HFP layer. Ultimately, the light is recombined with electrons already accumulated inside the Alq3 / PEI layer.
한편, 폴리이미드 고분자가 소자의 전기 발광에 미치는 영향을 살펴보기 위해, 먼저 유기금속 발광물질인 Alq3만을 석영(quartz) 기판위에 진공증착하여 최종 두께 50 ㎚로 PEI를 포함하지 않는 박막을 제조하고, Alq3를 PEI에 클로로포름을 사용하여 무게비 50 : 50 (Alq3 : PEI)로 분자수준으로 분산시킨 용액 (고형분 함량: 1 중량%)을 석영 기판위에 스핀-코팅한 후 건조시켜 50 ㎚ 두께로 폴리이미드를 포함하는 박막을 제조하고, 이들 박막의 광발광 스펙트럼을 측정하였으며, 그 결과를 도 3에 나타내었다. 도 3에서 점선은 Alq3 박막이고 실선은 Alq3/PEI 박막이다. 여기에서 보듯이, PEI를 포함하지 않는 박막은 520㎚ 근처에서 발광피크가 관찰된 데 반하여 PEI를 포함하는 박막은 510㎚ 근처에서 발광피크가 관찰되어 에너지가 큰 쪽으로 청색이동(blue shift)되었음을 알 수 있다. 이러한 현상은 발광분자들이 기질인 PEI로 인해 분자간 거리가 멀어져 생기는 "희석 효과(dilution effect)"에 기인하는 것이다. 따라서, PEI에 발광물질을 분산시킨 박막은 색조정(color tunning)이 가능함을 알 수 있다.On the other hand, in order to examine the effect of the polyimide polymer on the electroluminescence of the device, by first vacuum-depositing only Alq3, an organic metal light emitting material on a quartz substrate to prepare a thin film containing no PEI with a final thickness of 50 nm, Alq3 was dissolved in PEI with chloroform at a molecular weight of 50: 50 (Alq3: PEI) in a molecular level solution (solid content: 1 wt%) on a quartz substrate by spin-coating and drying the polyimide to 50 nm thickness. Thin films were prepared, the photoluminescence spectra of these thin films were measured, and the results are shown in FIG. 3. In FIG. 3, the dotted line is an Alq3 thin film and the solid line is an Alq3 / PEI thin film. As shown here, the light emitting peak was observed at around 520 nm for the thin film without PEI, whereas the light emission peak was observed at around 510 nm for the thin film containing PEI, indicating that the blue shifted toward the higher energy. Can be. This phenomenon is due to the "dilution effect" caused by the intermolecular distance caused by the light-emitting molecules PEI substrate. Therefore, it can be seen that the thin film in which the light emitting material is dispersed in the PEI is capable of color tunning.
또한 상기에서 제조된 소자의 구동시 전압인가에 따른 전류 밀도의 변화를 살펴보았으며, 그 결과는 도 4a와 4b에 나타내었다. 도 4a와 4b에서 1은 정공수송층이고 2는 발광/전자수송층이며, h+는 정공이고 e-는 전자이다. 여기에서 보듯이 전압을 인가하자마자 누설전류(leakage current)가 점진적으로 증가하다가 약 13 volt부터 전류가 급격히 증가하는 전형적인 다이오드 특성이 나타났다. 따라서, 이 전압에서부터 발광이 됨을 짐작할 수 있다.In addition, the change of the current density according to the voltage applied when driving the device manufactured above, the results are shown in Figures 4a and 4b. 4A and 4B, 1 is a hole transport layer, 2 is a light emitting / electron transport layer, h + is a hole, and e− is an electron. As shown here, a typical diode characteristic was observed in which the leakage current gradually increased as soon as voltage was applied, and then the current rapidly increased from about 13 volts. Therefore, it can be estimated that light emission starts from this voltage.
또한, 상기에서 제조된 소자의 구동시 인가 전압에 따른 전기발광강도의 변화를 살펴보았으며, 그 결과는 도 5a와 5b에 나타내었다. 여기에서 보듯이 12 volt에서 광자(photon)가 감지되었으나(도 5a), 13 volt가 보다 정확한 켜짐 전압임을 알 수 있다(도 5b).In addition, the change in electroluminescent intensity according to the applied voltage when driving the device manufactured above was examined, and the results are shown in FIGS. 5A and 5B. As shown here, photons were detected at 12 volts (FIG. 5A), but it can be seen that 13 volts is a more accurate ON voltage (FIG. 5B).
상기에서 제조된 소자의 전류밀도에 따른 전기발광강도의 변화는 도 6에 나타내었다. 여기에서 보듯이 0 내지 4 ㎃/㎠ 의 구간은 누설전류(leakage current) 구간으로 이 구간에서는 전류는 소자내부로 흐르지만 발광이 되지않으며, 4 내지 45 ㎃/㎠ 의 구간은 주입된 전자가 발광에 기여하는 구간으로 이중 특히 20 내지 45 ㎃/㎠ 의 고전압 구간에서의 기울기는 0.368인데 반해 4 내지 20 ㎃/㎠ 의 저전압 구간에서의 기울기는 0.018이었다. 따라서, 전자의 발광에 대한 기여도는 저전압 구간에서보다는 고전압 구간에서 높음을 알 수 있다.The change in electroluminescent intensity according to the current density of the device manufactured above is shown in FIG. 6. As shown here, a section of 0 to 4 ㎃ / ㎠ is a leakage current section in which current flows into the device but no light is emitted, and a region of 4 to 45 ㎃ / ㎠ is injected. In particular, the slope of the high voltage section of 20 to 45 mA /
본 발명의 유기발광소자는 전공수송층을 정공수송 물질과 불소 고분자로 이루어진 혼합층으로 제조하고 발광/전자수송층을 발광물질과 폴리이미드 고분자로 이루어진 혼합층으로 제조함으로써, 내열성 및 박막특성이 우수하여 안정성이 매우 탁월하다.The organic light emitting device of the present invention is made of a mixed layer made of a hole transport material and a fluorine polymer and a light emitting / electron transport layer made of a mixed layer made of a light emitting material and a polyimide polymer. Excellent
또한 본 발명의 소자는 대면적으로 제조가 가능하고, 고분자만으로 이루어지므로 구부리거나 접을 수 있는 표시소자(flexible display)의 제작이 가능해진다.In addition, the device of the present invention can be manufactured in a large area and made of only a polymer, so that a bendable or foldable display device can be manufactured.
본 발명은 유기전자소자 뿐 아니라 대면적 태양전지 및 포토다이오드 등에 활용될 수 있다.The present invention can be utilized in large area solar cells and photodiodes as well as organic electronic devices.
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019970074297A KR100261539B1 (en) | 1997-12-26 | 1997-12-26 | Organic light emitting device having good stability |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019970074297A KR100261539B1 (en) | 1997-12-26 | 1997-12-26 | Organic light emitting device having good stability |
Publications (2)
Publication Number | Publication Date |
---|---|
KR19990054476A KR19990054476A (en) | 1999-07-15 |
KR100261539B1 true KR100261539B1 (en) | 2000-07-15 |
Family
ID=19528728
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019970074297A KR100261539B1 (en) | 1997-12-26 | 1997-12-26 | Organic light emitting device having good stability |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100261539B1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100778286B1 (en) * | 2001-12-29 | 2007-11-22 | 엘지.필립스 엘시디 주식회사 | manufacturing method of organic electroluminescence displays |
KR100478523B1 (en) * | 2002-06-12 | 2005-03-28 | 삼성에스디아이 주식회사 | Emitting composition mixture polymer and electroluminescence device using the same |
-
1997
- 1997-12-26 KR KR1019970074297A patent/KR100261539B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR19990054476A (en) | 1999-07-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Gong et al. | Multilayer polymer light‐emitting diodes: white‐light emission with high efficiency | |
JP4048521B2 (en) | Light emitting element | |
US6611096B1 (en) | Organic electronic devices having conducting self-doped polymer buffer layers | |
KR20020059256A (en) | Organic light emitting diode devices with improved luminance efficiency | |
JP3978976B2 (en) | Organic electroluminescence device | |
US6917158B2 (en) | High-qualty aluminum-doped zinc oxide layer as transparent conductive electrode for organic light-emitting devices | |
US7121912B2 (en) | Method of improving stability in OLED devices | |
JP3923038B2 (en) | Organic EL light emitting display device and method for manufacturing the same | |
JPH11219790A (en) | Multi-layer electrode for electroluminescence device | |
US20010003629A1 (en) | Organic electroluminescence device | |
KR100261539B1 (en) | Organic light emitting device having good stability | |
KR20000048006A (en) | Electroluminescent device with arylethylene derivatives in hole transport layer | |
KR100280961B1 (en) | Organic light emitting device capable of driving at low pot ential with good stability | |
JP2003229279A (en) | Organic electroluminescent element | |
KR100790672B1 (en) | Organic electroluminescence element and organic electroluminescence display | |
Wang et al. | Light‐emitting devices for wearable flexible displays | |
Hamaguchi et al. | Color-variable emission in multilayer polymer electroluminescent devices containing electron-blocking layer | |
GB2412658A (en) | Organic EL element | |
KR100261537B1 (en) | Organic light-emitting device having improved stability | |
KR100261540B1 (en) | Organic light emitting device capable of driving at low potential with improved stability | |
KR100280960B1 (en) | Voltage-controlled color variable light emitting device having good stability and the preparation thereof | |
JP2000348865A (en) | Organic electroluminescent element | |
WO2015152148A1 (en) | Organic electroluminescent element | |
KR100277486B1 (en) | Organic light-emitting diode capable of color tuning | |
KR101193181B1 (en) | Composition for forming luminiscent layer and high efficient organic electroluminescence device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20060403 Year of fee payment: 7 |
|
LAPS | Lapse due to unpaid annual fee |