KR100265806B1 - Laser Diode and Manufacturing Method - Google Patents
Laser Diode and Manufacturing Method Download PDFInfo
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- KR100265806B1 KR100265806B1 KR1019930022325A KR930022325A KR100265806B1 KR 100265806 B1 KR100265806 B1 KR 100265806B1 KR 1019930022325 A KR1019930022325 A KR 1019930022325A KR 930022325 A KR930022325 A KR 930022325A KR 100265806 B1 KR100265806 B1 KR 100265806B1
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 230000000670 limiting effect Effects 0.000 claims abstract description 15
- 239000003963 antioxidant agent Substances 0.000 claims abstract description 13
- 230000003078 antioxidant effect Effects 0.000 claims abstract description 13
- 238000005406 washing Methods 0.000 claims abstract description 3
- 238000005253 cladding Methods 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 230000010355 oscillation Effects 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 3
- 230000004907 flux Effects 0.000 claims description 2
- 230000006866 deterioration Effects 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000003064 anti-oxidating effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000010365 information processing Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/321—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
- G11B7/127—Lasers; Multiple laser arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/02—MBE
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
Abstract
본 발명은 레이저 다이오드와 그 제조방법에 관한 것이다.The present invention relates to a laser diode and a method of manufacturing the same.
본 발명 레이저 다이오드와 그 제조방법은 활성층을 횡 방향으로 단차를 주어 발광부위가 경사면에 의해 제한되도록 하여 제한효과를 증대시켜 임계전류의 저감화 및 레이저빔 특성등을 향상시키며, 제1크래드층이 공기중에 노출되어 특성이 나빠지는 것을 방지하기 위해 산화방지막버퍼층으로 덮은 다음 열세척 및 재성장을 행하는 방식으로 매우 깨끗한 표면위에 재성장을 행하여 계면특성을 향상시키는 이점등을 제공한다.The laser diode of the present invention and the method of manufacturing the active layer is provided with a step in the transverse direction so that the light emitting region is limited by the inclined surface to increase the limiting effect to reduce the threshold current and improve the laser beam characteristics, etc. In order to prevent the deterioration of properties due to exposure to air, it is covered with an antioxidant film buffer layer, and then regrowed on a very clean surface by heat washing and regrowth, thereby providing an interface property.
Description
[발명의 명칭[Name of invention]
레이저 다이오드와 그 제조방법Laser Diode and Manufacturing Method
[도면의 간단한 설명][Brief Description of Drawings]
제1도는 종래 레이저 다이오드의 개략적인 단면도이며,1 is a schematic cross-sectional view of a conventional laser diode,
제2도 내지 제3도는 본 발명 제조방법의 공정을 개략적으로 도시하는 공정 단면도이며, 그리고2 to 3 are process cross-sectional views schematically showing the process of the manufacturing method of the present invention, and
제4도는 본 발명에 따른 레이저 다이오드의 개략적인 단면도이다.4 is a schematic cross-sectional view of a laser diode according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 기판 2 : 버퍼층1 substrate 2 buffer layer
3 : 제1크래드층 4 : 전류제한층3: first clad layer 4: current limiting layer
5 : 활성층 6 : 제2크래드층5: active layer 6: second clad layer
7 : 밴드갭감소층 8 : 콘택트층7: bandgap reducing layer 8: contact layer
2a : 산화방지버퍼층2a: antioxidant buffer layer
[발명의 상세한 설명]Detailed description of the invention
본 발명은 광 디스크 및 레이저 프린터등의 광 정보처리용 광원으로 폭 넓게 사용되는 670nm 파장대의 가시광 레이저 다이오드와 그 제조방법에 관한 것으로서, 레이저 다이오드의 활성층에 단차를 주어 횡방향으로의 제한성(confinement)를 강화하여 레이저 다이오드의 특성을 개선시킨 변형된 VSIS 구조의 레이저 다이오드와 그 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a visible light laser diode having a wavelength of 670 nm widely used as a light source for optical information processing such as an optical disk and a laser printer, and a method of manufacturing the same. The present invention relates to a laser diode of a modified VSIS structure and a method of fabricating the same, by improving the characteristics of the laser diode.
일반적으로 레이저 다이오드를 광 디스크등의 광 정보처리 분야에 광원으로 사용하기 위한 가장 중요한 성능은 안정한 기본 횡 모드 발진이다. 즉, 발광 스폿이 단일로 되고, 더욱이 그 광 강도피크의 위치가 광 출력레벨에 따라서 이동하지 않는 것이 필요하다. 다음으로 중요한 성능은 임계치 전류가 적은 것이다. 이들 두가지의 성능을 만족시키기 위해서 개발된 것이 스트라이프(stripe)형 레이저 다이오드이다. 이 스트라이프형 레이저 다이오드는, 광 도파로가 전류주입에 의한 이득분포에 의해 결정되는 이득도파형 레이저 다이오드와 접합방향에 굴절율 분포가 설계된 굴절율 도파형 레이저 다이오드로 대별된다. 횡 모드의 안정성, 임계치 전류, 비점격차에서는 굴절율도파형 레이저 다이오드가 단연 우수하며, 현재 실용화되고 있는 레이저다이오드는 접합 평행방향에 실효 구절율차를 두어 접합폭에 광을 가두는 실효 굴절율 도파형 레이저 다이오드가 대부분이다. 이와 같은 실효 굴절율 도파형 레이저 다이오드의 예가 VSIS(V-channeled substrate inner stripe)형 레이저 다이오드이다. 이 VSIS형 레이저 다이오드는 스트라이프 양측의 활성층에 근접하여 광 흡수층이 형성되는데, 이것은 전류저지의 역할을 함과 동시에 내부 스트라이프 구조를 형성한다.In general, the most important performance for using a laser diode as a light source in an optical information processing field such as an optical disk is stable basic transverse mode oscillation. That is, it is necessary that the light emission spot becomes single, and furthermore, the position of the light intensity peak does not move in accordance with the light output level. The next important performance is the low threshold current. The stripe type laser diode was developed to satisfy these two performances. This stripe laser diode is roughly classified into a gain waveguide laser diode whose optical waveguide is determined by a gain distribution by current injection and a refractive index waveguide laser diode whose refractive index distribution is designed in the bonding direction. Refractive-waveguided laser diodes are far superior in the stability, threshold current, and non-point difference in the lateral mode, and currently used laser diodes have an effective refractive index waveguide laser diode that confines light in the junction width with an effective sphere ratio difference in the junction parallel direction. Is most of them. An example of such an effective refractive index waveguide laser diode is a V-channeled substrate inner stripe laser diode. This VSIS laser diode forms a light absorbing layer in proximity to the active layers on both sides of the stripe, which serves as current blocking and forms an internal stripe structure.
그러나, 상기의 670nm 파장대의 가시광 레이저 다이오드는 전형적인 SBR(selectively buried ridge) 구조의 반도체 소자로서, 제1도에 도시되어 있는 바와 같이 기판(10) 상부에 버퍼층(20), 제1크래드층(30), 도핑안된 활성층(40) 및 제2크래드층(50)을 1차로 성장한 다음, 사진식각에 의해 상기 제2크래드층 중심부에 소정의 폭과 높이를 가지는 리지 스트라이프(ridge stripe)를 형성한다. 그 다음, 2차로 밴드갭감소층(60), 전류제한층(70), 3차로 콘택트층(80)을 성장하여 제조하였다.However, the visible light laser diode in the 670 nm wavelength range is a typical SBR (selectively buried ridge) semiconductor device, and as shown in FIG. 1, the buffer layer 20 and the first cladding layer are formed on the substrate 10. 30), the undoped active layer 40 and the second cladding layer 50 are grown first, and then a ridge stripe having a predetermined width and height is formed at the center of the second cladding layer by photolithography. Form. Subsequently, the band gap reduction layer 60, the current limiting layer 70, and the third contact layer 80 were grown to be manufactured.
그런데, 상기의 2차 내지 3차의 성장시 아연(Zn)등의 불순물이 활성층(40)내로 확산되어 비발광의 원인이 되거나 소자의 특성인 신뢰성을 저하시키는 문제점이 있었다.However, during the second to third growth, impurities such as zinc (Zn) diffuse into the active layer 40 to cause non-light emission or to deteriorate the reliability of the device.
본 발명은 상기와 같은 문제점을 해결하기 위하여 안출된 것으로서, 활성층에 횡 방향으로 단차를 주어 발광 부위가 경사면에 의해 제한되도록 제한 효과를 증대시켜 임계전류치의 저감화와 레이저빔등의 특성을 향상시킬 수 있는 변형된 VSIS 레이저 다이오드와 그 제조방법을 제공함에 그 목적이 있다.The present invention has been made to solve the above problems, it is possible to increase the limiting effect so that the light emitting portion is limited by the inclined surface by giving a step in the lateral direction to the active layer to reduce the threshold current value and improve the characteristics of the laser beam and the like. An object of the present invention is to provide a modified VSIS laser diode and a method of manufacturing the same.
그리고, 크래드층이 공기중에 노출되어 알루미늄(Al)의 산화에 의해 특성이 나빠지는 것을 방지할 수 있는 레이저 다이오드와 그 제조방법을 제공함을 그 목적으로 한다.Another object of the present invention is to provide a laser diode and a method of manufacturing the same, which can prevent the clad layer from being exposed to air and deteriorating characteristics due to oxidation of aluminum (Al).
상기의 목적을 달성하기 위하여 본 발명에 따른 레이저 다이오드는,In order to achieve the above object, a laser diode according to the present invention,
그 저면에 전극이 형성되는 기판과, 상기 기판의 상부에 제1크래드층과 활성층 및 제2크래드층이 순차적으로 형성되어 레이저빔을 발진시키는 레이저 발진층 및 상기 레이저 발진층의 상부에 순차적으로 형성되는 콘택트층과 전극을 구비한 레이저 다이오드에 있어서,A substrate having an electrode formed on the bottom thereof, a first cladding layer, an active layer, and a second cladding layer formed sequentially on the substrate to sequentially generate a laser oscillation layer for generating a laser beam and an upper portion of the laser oscillation layer. In the laser diode having a contact layer and an electrode formed of,
상기 기판과 제1크래드층사이에는 평탄한 저면을 갖는 전류주입 채널이 그 가운데 부분에 형성되어 있는 전류제한층이 개재되고,Between the substrate and the first cladding layer is interposed a current limiting layer in which a current injection channel having a flat bottom surface is formed in the center portion,
상기 전류주입 채널 평탄저면상에 버퍼층이 형성되며,A buffer layer is formed on the bottom of the current injection channel flat surface,
상기 제1크래드층은 그 가운데 부분이 리지를 형성하고,The first cladding layer forms a ridge in the center thereof,
상기 활성층은 상기 제1크래드층의 리지에 대응하여 형성되어 평탄부와 경사부를 갖으며,The active layer is formed to correspond to the ridge of the first cladding layer and has a flat portion and an inclined portion,
상기 제2크래드층과 콘택트층사이에 밴드갭감소층이 개재되어 형성된 점에 그 특징이 있다.The band gap reducing layer is interposed between the second clad layer and the contact layer.
그리고, 상기 목적을 달성하기 위하여 본 발명 제조방법은,And, in order to achieve the object of the present invention,
(1) 기판상에 버퍼층, 제1크래드층 및 산화방지버퍼층을 성장하는 제1성장단계와,(1) a first growth step of growing a buffer layer, a first clad layer and an antioxidant buffer layer on a substrate,
(2) 상기 산화방지버퍼층의 가운데 부분의 일부영역에 마스크층을 형성하는 마스크형성단계와,(2) a mask forming step of forming a mask layer in a partial region of the center portion of the antioxidant buffer layer;
(3) 상기 마스크를 이용한 식각공정으로 상기 버퍼층, 제1크래드층 및 산화방지버퍼층의 소정부분을 식각하여 역 메사형의 구조를 형성하는 역메사 형성단계와,(3) a reverse mesa forming step of forming a reverse mesa type structure by etching predetermined portions of the buffer layer, the first clad layer, and the antioxidant buffer layer by an etching process using the mask;
(4) 상기 역메사 형성단계에서 식각제거된 부분에 전류제한층을 소정 높이까지 성장하는 전류제한층성장단계와,(4) a current limiting layer growth step of growing a current limiting layer to a predetermined height on the portion removed by etching in the reverse mesa forming step;
(5) 상기 마스크를 제거하고, 열세척에 의해 상기 산화방지버퍼층만을 선택적으로 제거하는 제거단계와,(5) a removing step of removing the mask and selectively removing only the antioxidant buffer layer by heat washing;
(6) 상기 메사구조에 대응하여 전류제한층을 포함하는 제1크래드층, 경사면을 갖는 활성층, 제2크래드층, 밴드갭감소층 및 콘택트층을 성장하는 다층성장단계를 포함하는 점에 그 특징이 있다.(6) a multilayer growth step of growing a first cladding layer including a current limiting layer, an active layer having an inclined surface, a second cladding layer, a bandgap reducing layer, and a contact layer corresponding to the mesa structure; It has its features.
이하 첨부된 도면을 참조하면서 본 발명의 실시예를 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
제2도 내지 제3도는 본 발명 제조방법의 공정을 개략적으로 도시하는 공정 단면도이며, 제4도는 본 발명에 따른 레이저 다이오드의 개략적인 단면도이다. 도면에서, 1은 p+-GaAs 기판이며, 4는 가운데 부분의 일부영역이 채널을 형성하고 그채널 저면에는 평탄면이 형성된 n+-GaAs 전류제한층, 2는 상기 채널의 평탄면상에 형성된 p-GaInP 버퍼층이다. 그리고, 3과 3a는 상기 채널영역과 전류제한층 상면에 형성된 그 가운데 영역이 리지구조인 p-AlGaInP 제1크래드층이며, 5는 상기 제1크래드층(3, 3a)의 리지에 대응하여 형성되어 경사면과 평탄면을 갖는, 즉 단차가 형성된 도핑안된 AlGaInP 활성층, 6은 상기 활성층(5)의 상면에 형성된 n-AlGaInP 제2크래드층이다. 또한, 8은 상기 제2크래드층(6)의 상부에 형성된 n+-GaAs 콘택트층이며, 7은 상기 제2크래드층(6)과 콘택트층(8)의 에너지 밴드갭을 완화하기 위하여 그 사이에 개재되어 형성된 n-GaInP 밴드갭감소층이다. 기판(1) 저면과 콘택트층(8) 상면에 형성되는 전극은 편의상 생략하였다.2 to 3 are process cross-sectional views schematically showing the process of the manufacturing method of the present invention, and FIG. 4 is a schematic cross-sectional view of the laser diode according to the present invention. In the figure, 1 is a p + -GaAs substrate, 4 is a n + -GaAs current limiting layer in which a partial region of the center portion forms a channel and a flat surface is formed on the bottom of the channel, and 2 is p formed on the flat surface of the channel GaInP buffer layer. 3 and 3a are p-AlGaInP first cladding layers having a ridge structure in the center formed on the channel region and the current limiting layer, and 5 corresponds to the ridges of the first cladding layers 3 and 3a. And an undoped AlGaInP active layer having an inclined surface and a flat surface, that is, a step formed therein, 6 is an n-AlGaInP second clad layer formed on the upper surface of the active layer 5. In addition, 8 is an n + -GaAs contact layer formed on the second clad layer 6, 7 is to reduce the energy band gap of the second clad layer 6 and the contact layer (8). It is an n-GaInP band gap reduction layer formed in between. The electrodes formed on the bottom surface of the substrate 1 and the top surface of the contact layer 8 are omitted for convenience.
상술한 바와 같은 본 발명 레이저 다이오드는 활성층(5)이 상기 제1크래드층(3, 3a)의 리지에 대응하여 형성됨으로써 제4도에 도시되어 있는 바와 같이 경사면을 갖는다. 즉, 활성층(5)이 횡 방향으로 단차가 존재하여 경사면상에서는 에너지 밴드갭이 커지는 효과에 의해 제한성의 향상과 임계전류치의 감소 및 원형레이저빔의 형성을 용이하게 할 수 있는 것이다.The laser diode of the present invention as described above has an inclined surface as shown in FIG. 4 by forming the active layer 5 corresponding to the ridges of the first clad layers 3 and 3a. That is, the active layer 5 has a step in the lateral direction, and thus the energy band gap can be increased on the inclined surface, thereby making it possible to improve the restriction, reduce the threshold current value, and easily form the circular laser beam.
이하 본 발명 제조방법을 설명한다.Hereinafter, the manufacturing method of the present invention will be described.
(1) (제1차성장단계) p+GaAs 기판(1)상에 p-GaInP 버퍼층(2), p-AlGaInP 제1크래드층(3) 및 상기 버퍼층(2)과 조성물질이 같은 산화방지버퍼층(2a)을 성장한다. 이때, 공정의 일관성을 위해 분자선성장법으로 성장하는 것이 바람직하다. 상기의 산화방지버퍼층(2a)을 더 성장하는 것은 후술하는 단계에서 제1크래드층(3)이 공기중에 노출되어 특성이 나빠지는 것을 방지하기 위한 것이다.(1) (First growth step) Oxidation of the same composition as the p-GaInP buffer layer (2), p-AlGaInP first clad layer (3) and the buffer layer (2) on the p + GaAs substrate (1) The prevention buffer layer 2a is grown. At this time, it is preferable to grow by the molecular beam growth method for the consistency of the process. Further growth of the antioxidant buffer layer 2a is to prevent the first cladding layer 3 from being exposed to air and deteriorating characteristics in the steps described later.
(2) (마스크형성단계) 상기 산화방지버퍼층(2a)의 가운데 부분의 일부영역에 SiO2또는 SiN4마스크층(9)을 형성한다.(2) (Mask Formation Step) A SiO 2 or SiN 4 mask layer 9 is formed in a partial region of the center portion of the antioxidant buffer layer 2a.
(3) (메사형성단계) 제2도에 도시되어 있는 바와 같이 상기 마스크(9)를 이용한 통상적인 식각공정으로 상기 버퍼층(2), 제1크래드층(3) 및 산화방지버퍼층(2a)의 소정부분을 식각하여 역메사형의 구조를 형성한다.(3) (Mesa forming step) As shown in FIG. 2, the buffer layer 2, the first cladding layer 3, and the anti-oxidation buffer layer 2a are conventionally etched using the mask 9. A predetermined portion of is etched to form an inverted mesa type structure.
(4) (전류제한층성장단계) 제3도에 도시되어 있는 바와 같이 상기 역메사 형성단계에서 식각제거된 영역에 n+-GaAs 전류제한층(4)을 소정 높이까지 성장한다. 이때, 공정의 일관성을 위해 분자선 성장법으로 성장하는 것이 바람직하다.(4) (Current Limit Layer Growth Step) As shown in FIG. 3, the n + -GaAs current limit layer 4 is grown to a predetermined height in the region etched away in the reverse mesa formation step. At this time, it is preferable to grow by the molecular beam growth method for the consistency of the process.
(5) (제거단계) 제3도에 도시되어 있는 바와 같이 상기 마스크(9)를 제거하고, 분자선성장법의 As4플럭스(flux)를 이용한 열세척(thermal cleaning)에 의해 상기 산화방지버퍼층(2a)만을 선택적으로 제거한다.(5) (Removal step) As shown in FIG. 3, the mask 9 is removed, and the antioxidant buffer layer is removed by thermal cleaning using As 4 flux of molecular line growth. Selectively remove only 2a).
(6) (다층성장단계) 제4도에 도시되어 있는 바와 같이 상기 메사구조에 대응하여 전류제한층을 포함하는 p-AlGaInP 제1크래드층(3a), 경사면을 갖는 도핑안된 AlGaInP 활성층(5), n-AlGaInP 제2크래드층(6), n-GaInP 밴드갭감소층(7) 및 n+-GaAs 콘택트층(8)을 성장한다. 이때, 제조공정의 일관성을 위해서 분자선성장법을 사용하여 성장하는 것이 바람직하다. 즉, 상기의 제거단계에 연이어서 계속적으로 동일한 제조공정인 분자선성장법으로 상기의 결정층들을 성장함으로써 소자를 효율적으로 제조할 수 있게 되는 것이다.(6) (Multilayer growth step) As shown in FIG. 4, the p-AlGaInP first cladding layer 3a including the current limiting layer corresponding to the mesa structure, and the undoped AlGaInP active layer having the inclined surface (5) ), an n-AlGaInP second clad layer 6, an n-GaInP band gap reduction layer 7 and an n + -GaAs contact layer 8 are grown. At this time, it is preferable to grow using the molecular beam growth method for the consistency of the manufacturing process. That is, the device can be efficiently manufactured by growing the crystal layers by the molecular beam growth method which is the same manufacturing process continuously after the removal step.
그리고, 더 나아가 상기 기판(1)의 저면 및 콘택트층(80)의 상면에 전극을 증착형성하여 하나의 완전한 레이저 다이오드를 완성한다.Further, an electrode is deposited on the bottom of the substrate 1 and the top of the contact layer 80 to complete one complete laser diode.
상술한 바와 같이 본 발명 레이저 다이오드의 제조방법은 제1크래드층(3)이 공기에 노출되어 알루미늄(Al)의 산화에 의해 특성이 나빠지는 것을 막기 위해 산화방지버퍼층(2a)으로 덮은 다음 열세척 및 재성장이 연속적으로 수행되는 방식으로 깨끗한 표면위에 재성장을 행하여 계면특성을 향상시킬 수 있는 이점을 제공한다.As described above, in the method of manufacturing the laser diode of the present invention, the first cladding layer 3 is covered with an anti-oxidation buffer layer 2a in order to prevent the properties of the first clad layer 3 from being deteriorated by oxidation of aluminum (Al) and then heat. The cleaning and regrowth is performed continuously to provide the advantage of improving the interfacial properties by regrowth on a clean surface.
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