KR100244919B1 - Gas analysis device in forming semiconductor - Google Patents

Abstract

The present invention relates to a gas analysis device for semiconductor processes that can easily analyze the gas and gas supply mechanisms used in the semiconductor device manufacturing process.

The present invention relates to a plurality of pure gas supply sources for supplying different pure gas to each other, a plurality of purifiers connected to the plurality of pure gas supplies, and the pure gas respectively connected to the purifiers and discharged from the pure gas supply source. Equipped with a plurality of standard gas supply source for supplying to the analysis equipment for measuring the impurity concentration of the standard gas having a known concentration to the pure gas by diluting the pure gas passing through the purification device by releasing the standard gas of the same specific concentration It is done by

Therefore, there is an effect that can easily proceed the analysis process.

Description

Semiconductor Gas Analysis System

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas analyzing apparatus for semiconductor processes, and more particularly, to a gas analyzing apparatus for semiconductor processing, which can easily analyze gases and gas supplying apparatuses used in semiconductor device manufacturing processes.

Generally, more than 40 kinds of gases (Gas) having properties such as reactivity, corrosiveness, and toxicity are used in the semiconductor device manufacturing process. These gases are also used as process gases used directly in the semiconductor device manufacturing process and as auxiliary gases to maintain the process environment. It is also used as a carrier gas to move the process gas to the process chamber where the process proceeds.

Therefore, if the above-mentioned gas contains ionic impurities, molecular impurities, metallic impurities, or the like above the reference value, it may cause process defects. Therefore, the analytical process of periodically measuring the concentration of impurities contained in the gas using an analyzer Going on.

1 is a schematic configuration diagram of a gas analyzer for a semiconductor process according to the related art.

Referring to FIG. 1, a pure gas supply source 10 selectively supplying high purity nitrogen (N ₂ ) gas, argon (Ar) gas, and helium (He) gas is connected to a purification device 14 in which a purification process is performed. Then, it is connected with the purification device 14 and the 1st flow regulator 18 which adjusts the quantity of gas which passes.

The first valve 12 is installed on the gas supply line to which the pure gas supply source 10 and the purifier 14 are connected, and on the gas supply line to which the purifier 14 and the first flow regulator 18 are connected. The second valve 16 is provided. Then, after branching in front of the first valve 12 on the basis of the flow of pure gas, the branching line is formed after the second valve 16 is joined and the third valve 20 is provided.

In addition, the fourth valve 24 includes a standard gas supply source 22 for selectively supplying nitrogen gas, argon gas, and helium gas to which a certain amount of impurity is added, and a second flow controller 26 for adjusting the amount of gas passed. Is connected to the installed gas supply line.

In addition, after the first flow controller 18 and the second flow controller 26 are connected to each other, the first flow controller 18 and the second flow controller 26 are connected to an atmospheric pressure ionization mass spectrometer 28 in which an ionizer, an analyzer, and a detector are installed.

Accordingly, the pure gas selected from nitrogen gas, argon gas, and helium gas is discharged from the pure gas supply source 10, passes through the first valve 12, and then is supplied to the purification device 14 to be included in the pure gas. Purification process is performed to remove the.

The pure gas having undergone the purification process passes through the first flow regulator 18 after passing through the second valve 16 and is discharged after the amount of gas is adjusted. At this time, the same standard gas supplied from the pure gas supply source 10 of nitrogen gas, argon gas, and helium gas to which a predetermined amount of impurities are added is discharged from the standard gas supply source 22 to pass through the fourth valve 24. Then, the amount of gas is passed through the second flow regulator 26 is adjusted to dilute with the pure gas passed through the first flow regulator 18, a specific concentration of analytical reference gas is formed.

Subsequently, the specific reference analyte gas is supplied to an Atmospheric Pressure Ionization Mass Spectrometer (28), and as a result of ionization, the number of impurity components in the ionized analyte reference gas is calculated.

Therefore, the operator can prepare a standard graph representing the frequency of existence corresponding to the concentration of each component of the impurities contained in the analytical gas.

Next, after connecting a port for supplying an analytical process gas for a semiconductor device manufacturing process to a port for supplying a standard gas, an atmospheric pressure ionization mass spectrometer 28 converts the process gas for a semiconductor device manufacturing process. When supplied to, each component contained in the process gas is ionized to calculate a frequency of existence.

Therefore, the operator can determine the use of the process gas used in the semiconductor device manufacturing process by obtaining the concentration of the process gas using the standard graph and the frequency of the analysis process gas.

In addition, the first valve 12 and the second valve 16 provided at the front and rear ends of the purifier 14 are closed, and pure gas is supplied to the atmospheric pressure ionization mass spectrometer 28 while the third valve 20 is opened. And analysis to evaluate the performance of the purifier 14.

However, the pure gas discharged from the pure gas supply source selectively supplying nitrogen gas, argon gas, and helium gas has a problem in that the purification device is easily deteriorated because it is purified by only one purification device.

In addition, there is a problem in that an analysis process cannot be performed on impurities adsorbed on gas supply parts such as a filter and a valve used in a semiconductor device manufacturing process.

In addition, it is used for opening / closing an air valve on a gas supply line, cleaning a semiconductor component separated from a semiconductor device, and the like for analyzing nitrogen gas, helium gas, argon gas, etc., of which purity is lower than that of the pure gas. There is a problem that the port is not formed and the port for analyzing the air used in the semiconductor device manufacturing process is not formed, so that the analysis process cannot be easily performed.

In addition, since the gas passing through the gas supply line is not installed to maintain a constant temperature, there was a problem that the standard gas and pure gas passing through the gas supply line liquefied to act as a process defect factor.

SUMMARY OF THE INVENTION An object of the present invention is to provide a gas analysis device for semiconductor processing which prevents the deterioration of a purifier that purifies highly pure pure gas easily.

Another object of the present invention is to provide a gas analysis apparatus for a semiconductor process that can perform an analysis process on gas supply parts such as a valve and a filter used in a semiconductor device manufacturing process.

Still another object of the present invention is to close the air valve, to clean the semiconductor parts separated from the semiconductor device, and the like, and to reduce the purity of gas compared to pure gas such as nitrogen gas, argon gas, helium gas, etc. The present invention provides a gas analyzer for a semiconductor process that can be easily analyzed.

Still another object of the present invention is to provide a gas analyzer for a semiconductor process that can easily analyze air used in a semiconductor device manufacturing process.

Still another object of the present invention is to provide a gas analysis apparatus for a semiconductor process which prevents liquefaction of pure gas, standard gas, and analytical reference gas passing through the gas supply line on the gas supply line.

1 is a schematic configuration diagram of a gas analyzer for a semiconductor process according to the related art.

Figure 2 is a block diagram for explaining an embodiment of a gas analysis device for a semiconductor process according to the present invention.

* Explanation of symbols for main parts of the drawings

10: pure gas supply source 12, 48, 54, 60: first valve

14, 32, 38, 44: purifier 16, 50, 56, 62: second valve

18, 34, 40, 46: first flow regulator 20, 52, 58, 64: third valve

22: standard gas supply source 24, 68, 74, 80: fourth valve

26, 70, 76, 82: second flow regulator

28, 120: atmospheric ionization mass spectrometer

30: pure nitrogen gas source 36: pure argon gas source

42: pure helium gas source 66: standard nitrogen gas source

72: standard argon gas source 78: standard helium gas source

84: gas supply 86, 91: eighth valve

88, 92: third flow regulator 90: air supply source

94, 102: fifth valve 96, 104: sixth valve

98, 106 filter 100, 108 seventh valve

118: spool piece 122: ninth valve

124: the tenth valve 126: the eleventh valve

In order to achieve the above object, there is provided a gas analysis apparatus for a semiconductor process, comprising: a plurality of pure gas supply sources for supplying different pure gas, a plurality of purifiers connected to the plurality of pure gas supply sources, and the purifying apparatus; The concentration of impurity in the standard gas having a known concentration to the pure gas is measured by diluting the pure gas passing through the purification apparatus by releasing standard gas having a specific concentration equal to the pure gas emitted from the pure gas supply source, respectively. It consists of a plurality of standard gas supply source for supplying to the analysis equipment.

A plurality of first flow rate regulators are installed at the rear end of the purification apparatus based on the flow of the pure gas, and a plurality of second flow rate regulators are installed at the rear end of the standard gas supply source based on the flow of the standard gas. And to control the amount of standard gas.

Further, a plurality of first valves are installed between the pure gas supply source and the purifier, and a plurality of second valves are installed between the purifier and the first flow regulator, based on the flow of the pure gas. A branching line branched at the front end of the first valve and joined at the rear end of the second valve, and a branching line provided with the third valve may be formed to evaluate the performance of the purifier.

And an atmospheric pressure ionization mass spectrometer can also be used as said analysis equipment.

Preferably, a spool piece in which an analytical gas supply part is located inside the atmospheric pressure ionization mass spectrometer is installed on the basis of the flow of the diluted gas.

In addition, it is preferable to wind the heating coil outside the gas supply line for supplying the standard gas and the pure gas to the analysis equipment to prevent the gas passing through the gas supply line to be liquefied.

In addition, air used in a gas supply line and a semiconductor device manufacturing process supplying a gas used for opening / closing an air valve and cleaning a semiconductor component separated from a semiconductor device on a gas supply line supplied to the analysis facility. It may further form an air supply line for supplying.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a block diagram showing an embodiment of a gas analysis device for a semiconductor process according to the present invention.

2, the pure nitrogen gas supply source 30 for supplying pure nitrogen gas, the pure argon gas supply source 36 for supplying pure argon gas, and the pure helium gas supply source 42 for supplying pure helium gas Each nitrogen gas, argon gas and helium gas passes through each of the purifiers 32, 38 and 44 connected individually, and then passes through the first flow regulators 34, 40 and 46 connected individually and the amount of gas is controlled. It is supposed to be.

First valves 48, 54, and 60 are installed between the respective purification devices 32, 38, 44 and the pure gas supply sources 30, 36, 42, and each of the purification devices 32, 38, 44 and The second valves 50, 56, 62 are provided between the first flow regulators 34, 40, 46. Further, a branch branched from the front end of the first valves 48, 54, and 60 based on the gas flow, merged from the rear end of the second valves 50, 56, and 62, and provided with the third valves 52, 58, and 64. A line is formed.

Then, the standard nitrogen gas supply source 66 for supplying nitrogen gas mixed with impurities of a certain concentration, the standard argon gas source 72 for supplying argon gas in which impurities of a certain concentration are mixed, and the helium in which impurities of a certain concentration are mixed. A standard helium gas source 78 for supplying gas is connected to each of the second flow regulators 70, 76, and 82 for controlling the amount of gas passing through. Fourth valves 68, 74, and 80 are provided between the standard gas supply sources 66, 72, and 78 and the second flow regulators 70, 76, and 82.

Each of the first flow controllers 34, 40, 46 and the second flow controllers 70, 76, 82, and 88 corresponding to each other in the drawing and having the same gas passing therethrough are connected to each other, and then, It is connected to the spool piece 118 in which the gas supply component to be used is located.

On / off operation of the air valve and the semiconductor separated from the semiconductor device on the gas supply line to which each of the first flow regulators 34, 40, 46, the second flow regulators 70, 76, 82, and the spool piece 118 are connected Used to clean parts, etc., and supplies a gas supply source 84 for supplying nitrogen gas, argon gas, helium gas, etc., of which purity is lower than that of the pure gas, and for supplying air used in a semiconductor device manufacturing process. A gas supply line, in which an air supply source 90 is sequentially connected to each of the third flow regulators 88 and 92, is formed. Fifth valves 94 and 102 are provided at the front end of the gas supply source 84 and the air supply source 90, respectively, and branched at the front end of the fifth valve 94 and 102 based on the gas flow to form the fifth valve. A branching line is formed at the rear end (94, 102) and provided with the sixth valves 96, 104, the filters 98, 106, and the seventh valves 100, 108 sequentially. In addition, eighth valves 86 and 91 are provided between the gas supply source 84 and the air supply source 90 and the third flow regulators 88 and 92, respectively.

The spool piece 118 is connected to an atmospheric pressure ionization mass spectrometer 120 including an ionizer, an analyzer, and a detector.

A ninth valve 122 is installed in front of the spool piece 118 based on the flow of the gas, and a tenth valve 124 is installed in the rear end of the spool piece 118. In addition, a branching line is branched from the front of the ninth valve 122 based on the gas flow, merged from the rear end of the tenth valve 124, and provided with the eleventh valve 126.

As shown in FIG. 2, a heating coil is wound around the outer wall of the gas supply line to which gas such as standard gas, pure gas, air gas, and the like are supplied.

Accordingly, the pure gas supplied from the pure nitrogen gas supply source 30, the pure argon gas supply source 36, or the pure helium gas supply source 42 selected for the analysis process may be provided with the first valves 48, 54, and 60 separately installed. After passing through the purification apparatuses 32, 38, and 44 installed separately, and removing the foreign matters contained in the gas, the second valves 50, 56, and 62 are passed. Passing through the flow regulators 34, 40, 46, the amount of pure gas is controlled. At this time, the same type as the pure gas, and contains a certain amount of impurities, the standard gas selected from the standard nitrogen gas source 66, the standard argon gas source 72, the standard helium gas source 78 is the fourth valve (68). , 74, 80, and then passed through the second flow controller (70, 76, 82) and diluted with the pure gas passed through the first flow controller (34, 40, 46) to form an analytical reference gas. .

The analytical reference gas formed by the above-described process is supplied to the atmospheric pressure ionization mass spectrometer 120 through the eleventh valve 126 provided on the branch line. In the atmospheric pressure ionization mass spectrometer 120, a process of ionizing each component of the analytical reference gas supplied is performed. Accordingly, by calculating the number of each ionized component, that is, the abundance frequency, a standard graph corresponding to the abundance and concentration of each component included in the analysis reference gas can be prepared.

After the gas supply parts such as valves and filters used in the semiconductor device manufacturing process are positioned at the spool piece 118, the analysis reference gas is introduced into the spool piece 118 through the ninth valve 122. When supplied, moisture, ionic impurities, etc. adsorbed to the gas supplying part are outgassed, mixed with the analytical reference gas, and passed through the tenth valve 124 to the atmospheric ionization mass spectrometer 120. do.

Accordingly, the operator can obtain the concentration of impurities adsorbed on the gas supply component using the standard graph and evaluate the same.

In addition, the air stored in a specific location and stored in a specific location other than nitrogen gas, argon gas, helium gas, etc., whose purity is lower than that of the pure gas stored in the gas supply source, and the air used in the semiconductor device manufacturing process is selectively After passing through 94 and 102, it is stored in gas supply 84 or air supply 90.

Subsequently, the gas and air selected from the gas supply source 84 and the air supply source 90 pass the eighth valves 86 and 91, the third flow regulators 88 and 92, and the eleventh valve 126 installed on the branch line. After passing through, it is supplied to the atmospheric ionization mass spectrometer 120.

Accordingly, the inside of the atmospheric pressure ionization mass spectrometer 120 ionizes each component of the supplied gas and air to obtain the number of ionized components, that is, the frequency of existence, and then calculates the concentration of gas and air using the standard graph. Therefore, it is possible to evaluate how much impurities are contained in the gas and air.

After the continuous analysis process is performed, the first valves 48, 54, 60 and the second valves 50, 56, 62 provided at the front and rear ends of the purification apparatuses 32, 38, 44 are closed, and the gas flow is closed. When opening the third valve (52, 58, 64) installed on the branch line is branched in front of the first valve (48, 54, 60) and merged in the rear end of the second valve (50, 56, 62), Pure argon gas, nitrogen gas, helium gas, etc. supplied from the selected pure gas supply sources 30, 36, 42 pass through the third valves 52, 58, 64, and then the first flow regulators 34, 40, 46), the eleventh valve 126 is supplied to the atmospheric pressure ionization mass spectrometer 120, and the performance of the purification apparatuses 32, 38, 44 is evaluated as the gas analysis process proceeds.

In addition, the fifth valve 94, 102 is closed, the sixth valves 96, 104 and the seventh valves 100, 108 are opened, and the air or gas supplied from a specific position is supplied to the gas supply source 84 or the air supply source. It is supplied to 90.

Next, the gas or air discharged from the gas supply source 84 or the air supply source 90 is transferred to the eighth valves 86 and 91, the third flow regulators 88 and 92, and the eleventh valve 126 installed on the branch line. The filter 98 and 106 are evaluated as the analysis process for impurities contained in the gas or air is supplied to the atmospheric ionization mass spectrometer 120 after passing through).

In addition, since the heating coil is wound outside the gas supply line, the gas supply line maintains a constant temperature to prevent the standard gas, the pure gas, and the analytical standard gas from liquefying.

Therefore, according to the present invention, since the purification apparatus for purifying pure gas such as helium gas, argon gas, nitrogen gas, and the like is individually installed for each gas, the purification apparatus can be easily prevented from deteriorating.

In addition, by installing a spool piece in which a gas supply part is located, there is an effect that an analysis process may be performed on impurities adsorbed on a gas supply part such as a filter and a valve used in a semiconductor device manufacturing process.

In addition, it is used for opening / closing an air valve on a gas supply line, cleaning a semiconductor component separated from a semiconductor device, and the like, and gases such as nitrogen gas, helium gas, and argon gas, which have lower purity than the pure gas, and semiconductors. Forming a port for supplying air used in the device manufacturing process has an effect that can easily proceed the analysis process for the gas and air.

In addition, the heating coil is wound on the outer wall of the gas supply line, so that the gas supply line maintains a constant temperature, so that the standard gas, the pure gas, and the analytical standard gas that pass through the gas supply line are liquefied to act as a source of process failure. It has an effect.

Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.

Claims (25)

A plurality of pure gas supply sources for supplying different pure gas, a plurality of purifiers respectively connected to the plurality of pure gas supply sources and a specific concentration of the same as the pure gas discharged from the pure gas supply source, respectively connected to the purifier And a plurality of standard gas supply sources for diluting the pure gas passing through the purification apparatus by releasing the standard gas and supplying the analytical equipment for measuring impurity concentrations of the standard gas having a known concentration with respect to the pure gas. Gas analysis device for semiconductor processes. The gas analyzer of claim 1, wherein a plurality of first flow controllers are installed at a rear end of the purification apparatus based on the flow of the pure gas. The gas analyzer of claim 1, wherein a plurality of second flow controllers are installed at a rear end of the standard gas supply source based on the flow of the standard gas. 3. The gas analyzer of claim 2, wherein a plurality of first valves are installed between the pure gas supply source and the purifier. The gas analyzer of claim 2, wherein a plurality of second valves are disposed between the purifier and the first flow regulator. The gas analysis for semiconductor process according to claim 5, wherein a branching line branched at the front end of the first valve based on the flow of the pure gas, merged at the rear end of the second valve, and a third valve is installed. Device. 4. The gas analyzer of claim 3, wherein a fourth valve is installed between the standard gas supply source and the second flow regulator. The gas analyzer for semiconductor processing according to claim 1, wherein an atmospheric pressure ionization mass spectrometer is used as the analysis equipment. The gas analyzer of claim 8, wherein a spool piece is installed in front of the atmospheric ionization mass spectrometer based on the flow of the diluted gas. 10. The gas analyzer of claim 9, wherein a ninth valve is installed in front of the spool piece based on the flow of the diluted gas. The gas analyzer of claim 10, wherein a tenth valve is installed at a rear end of the spool piece based on the flow of the diluted gas. 12. The gas analyzer of claim 11, wherein a branching line is branched at the front end of the ninth valve and merged at the rear end of the tenth valve based on the flow of the gas. . The gas analyzer of claim 1, wherein a heating coil is wound around a gas supply line for supplying the standard gas and the pure gas to an analysis facility. The gas analyzer of claim 1, further comprising a gas supply line on which a gas used in a semiconductor device manufacturing process is supplied, on a gas supply line connected to the analysis facility. 15. The gas analyzer of claim 14, wherein a third flow controller is installed on the gas supply line. The gas analyzer of claim 15, wherein a gas supply source is installed in front of the third flow controller based on the flow of the gas. 17. The gas analyzer of claim 16, wherein an eighth valve is installed between the third flow controller and the gas supply source. 18. The gas analyzer of claim 17, wherein a fifth valve is installed in front of the gas supply source based on the flow of the gas. 19. The method according to claim 18, wherein a branching line is branched at the front end of the fifth valve based on the flow of the gas to merge at the fifth valve and the gas supply source, and a branching line in which the sixth valve, the filter, and the seventh valve are sequentially installed is formed. Gas analysis device for a semiconductor process, characterized in that. The gas analyzer of claim 1, further comprising an air supply line on which a gas used in a semiconductor device manufacturing process is supplied, on a gas supply line connected to the analysis facility. 21. The gas analyzer of claim 20, wherein a third flow controller is installed on the air supply line. 22. The gas analyzer of claim 21, wherein an air supply source is installed in front of the third flow regulator based on the air flow. 23. The gas analyzer of claim 22, wherein an eighth valve is installed between the third flow regulator and the air supply source. 24. The gas analyzer of claim 23, wherein a fifth valve is installed in front of the air supply source based on the air flow. A branching line according to claim 24, wherein a branching line branched at the front end of the fifth valve and merged between the fifth valve and the air supply source on the basis of the flow of air, and the sixth valve, the filter, and the seventh valve are sequentially installed. Gas analysis device for the semiconductor process, characterized in that formed.

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