KR100194201B1 - Test circuit of semiconductor memory device - Google Patents

Abstract

The present invention discloses a test circuit of a semiconductor memory device. The circuit can write various data input patterns in response to the control signal, and since the data input signal is waiting in front of the data input / output drivers in advance, there is no marginal problem with the clock signal controlling the input / output drivers. There is no loss of light time. Therefore, before the input / output driver enable clock signal is enabled when implementing the block write address masking and input / output masking functions in which write enable / disable is determined by data input through the data input / output pad. Timing margin is improved to allow valid input data to disable the clock signal.

Description

Test circuit of semiconductor memory device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor memory device, and more particularly to a semiconductor capable of generating various input data patterns when inputting test data to a predetermined number of representative input / output pins of input / output pins during multi-chip testing of the semiconductor memory device. A test circuit of a memory device.

The current trend of application specific memory (ASM) requires a memory having a high bandwidth. As one of the methods for this purpose, the memory device and the application specific integrated circuit (ASIC) have been integrated into a single chip in which the memory device and the ASIC chip are integrated into a board as a separate device. Embedded memory logic (EML) is in the stage of full-fledged development. The advantage of combining the memory device and the ASIC chip is that the data input / output bandwidth of the memory device can be greatly increased by increasing the number of data input / output pins between the memory device and the logic.

However, if the number of input / output pins of the memory device is increased, the test itself is impossible due to exceeding the input / output channel limit that the test equipment can provide when the memory device is tested, or the test cost is increased due to the difficulty of multi-chip test. Bring it.

In order to solve such a problem, a method of reducing the number of input / output pins in actual test was considered by adding a plurality of input / output pins.

For example, in a device with 1 * 32 input / output pins, if four input / output pins are added together, the test can be performed like a device with 1 * 8 input / output pins, thereby overcoming the limitation of the input / output channel of the test equipment. In addition, multi-chip testing is possible.

FIG. 1 is a block diagram of a test circuit of a conventional semiconductor memory device, and illustrates a test circuit in a case of testing a group of four data input / output pins of a chip 100 having 32 data input / output pins. 10), a pad 12, a data input buffer 14, a data output buffer 16, a data input / output driver 18, a comparator 20, and a memory cell array 22. In the multi-chip test, it is impossible to connect each of the 32 input / output pins to the test equipment, so the input / output pins are tied to the test equipment. Connections from pins 0 to 3 are the same as connections from pins 4 to 7 to pins 28 to 31. Therefore, the data write operation during connection and test from pins 0 to 3 is described as follows. Input data of 0 or 1 is input through pin 0. The data input buffer DIB0 buffers and outputs data from the pad 12. The data buffered by the data input buffer DIB0 is input and buffered into the other data input buffers DIB1, DIB2, DIB3, respectively. The data input / output drivers DIOD0 to DIOD3 input buffered data from each of the data input buffers DIB0 to DIB3 to write data to corresponding memory cells of the memory cell array 22. The written data is read from the corresponding memory cells according to the following read command and output to the data input / output drivers DIOD0 to DIOD3, respectively. Each output data of the data input / output drivers DIOD0 to DIOD3 is output and buffered to the data output buffers DOB0 to DOB3, respectively. The comparator 20 inputs and compares all the output data of the data output buffers DOB0 to DOB3 and compares whether these data are all the same or not, and outputs the result data to the pin 0 through the pad 12. Done. Thus, the inspector monitors the result data to determine whether the chip is defective or normal.

However, a test circuit of a conventional semiconductor memory device classifies a plurality of input / output pins into a predetermined number of groups in a multi-chip test and inputs the same data through one input / output pin of one of the input / output pins of each group. As a result, the same data is written to the corresponding memory cells of these groups. Thus, there is a problem in that different data cannot be written to adjacent memory cells. Therefore, it is possible to write all 0's or all 1's to the corresponding memory cells at the same time, but it is impossible to write 1010 ... and 0101 ... to the memory cells at the same time.

That is, when this method is used, the same input data is applied to other input / output pins in the group where the input / output representative of the input / output pins of the test equipment are contacted, so that various data patterns can be input between adjacent input / outputs. Due to the difficulty that is difficult, it is difficult to effectively verify the fail due to the coupling effect between adjacent input / output at high frequencies.

In addition, when a normal data path and a data path according to the pattern are differently used to write the pattern in the data input buffer to write various data patterns, at high frequency due to the delay difference between the normal data path and the data pattern path under test. Margin deteriorates between the input data arriving at the input / output driving circuit and the clock signal (DTCP) driving the input / output driving circuit, so that the margin in the input / output masking and block write address masking functions used in the graphic memory device is poor. Fail can occur.

SUMMARY OF THE INVENTION An object of the present invention is to generate various input data patterns upon inputting test data to a predetermined number of representative input / output pins of a plurality of input / output pins during multi-chip testing of a semiconductor memory device, and It is to provide a test circuit of a semiconductor memory device that can be prevented.

The test circuit of the semiconductor memory device of the present invention for achieving the above object is a plurality of data input / output pins, a plurality of data input / output pads respectively connected to the data input / output pins, the plurality of data input A plurality of data input buffers for respectively inputting and buffering data from the output pads, and a plurality of data input drivers for storing data from the plurality of data input buffers into respective corresponding memory cells. In the test circuit of a semiconductor memory device for performing a test by classifying into a predetermined number of groups according to the data input through the one data input / output pad of each group, the data input buffer of each group is inverted column Buffer and output the first data signal in response to the address strobe signal Buffering and outputting the even-numbered second data signals and the odd-numbered third data signals except for the first data signal in response to the first data input buffer and the inverted column address strobe signal in normal operation, respectively. And a plurality of second data input buffers, wherein each group of data input drivers latches the first data signal during normal operation and a test operation to output the latched first data signal in response to a clock signal. A first data input driver configured to latch the even-numbered second data signals in normal operation and output the respective latched even-numbered second data signals in response to the clock signal, and output the first in a test operation. Even-numbered second data for respectively latching signals and outputting the latched first signals in response to the clock signal An input driver, and latching the odd third data signals in normal operation, respectively, outputting the latched odd third data signals in response to the clock signal, and latching the second signal in test operation, respectively. And an odd third data input driver for outputting the latched second signal in response to the clock signal.

1 is a block diagram of a test circuit of a conventional semiconductor memory device.

FIG. 2 is a block diagram of the data input / output driver shown in FIG.

3 is a block diagram of the data input buffer shown in FIG.

4 is a detailed circuit diagram of the data input buffer 40 shown in FIG.

FIG. 5 is a detailed circuit diagram of the data input buffers 42, 44, and 46 shown in FIG.

6A and 6B are detailed circuit diagrams of the data input buffer of the present invention.

7 is a circuit diagram of a data pattern generation circuit of the present invention.

8a, b and c are circuit diagrams of the data input driver of the present invention.

Hereinafter, a test circuit of a conventional semiconductor memory device will be described with reference to the accompanying drawings before describing the test circuit of the semiconductor memory device of the present invention.

FIG. 2 is a block diagram of a conventional input / output driver, wherein data input / output drivers 30, 32, for inputting and outputting data input signals DI0 to DI3, respectively, in response to a driving clock signal DTCP. 34, 36). The drivers shown in FIG. 2 represent each of the drivers 18 in the chip shown in FIG. 1, each representing four input / output drivers.

Fig. 3 is a block diagram of a conventional data input buffer, which is a data input buffer 40 for inputting a data signal DO to generate data input signals DI0 and signals M1 and M2, and data in normal operation. Data input buffers 42 and 46 which output the signal D1 as the data input signal DI1 and output the signal M2 as the data input signals DI1 and 3 during the test operation, and the data signal during normal operation. The data input buffer 44 is configured to output D2 as a data input signal DI2 and to output a signal M1 as a data input signal DI2 during a test operation. The data input buffers shown in Fig. 3 also represent respective data input buffers 14 in the chip shown in Fig. 1, and each of four data input buffers.

FIG. 4 is a detailed circuit diagram of the data input buffer 40 shown in FIG. 3, which includes a buffer 50, a transfer gate 52, inverters 54, 56, 58, 60, 62, 70, 74, and three states. It consists of buffers 72 and 76.

In normal operation, the data signal DI0 is buffered through the buffer 50, and the buffered signal is turned on in response to the high level inverted column address strobe signal CASB. A buffered signal is output through 52). This signal is buffered by inverters 56 and 58 and output as a data input signal DI0. This signal is also buffered by inverters 60 and 62 and output as signal M1. In the test operation, when the control signal CHK is at the high level, the tri-state buffer 72 is turned off and the tri-state buffer 76 is turned on so that the output signal of the inverter 60 is converted to the inverter 74 and the tri-state buffer. It is output as a signal M2 through 76. That is, when the control signal CHK is at the high level, the data signal D0 is inverted and output. When the control signal CHK is at the low level, the tri-state buffer 72 is turned on so that the data signal D0 is the signal M2. Is output as is.

FIG. 5 is a detailed circuit diagram of the data input buffers 42, 44, 46 shown in FIG. 3, showing the buffer 80, the transfer gates 82, 92, the NOR gate 84, and the inverters 86, 88. , 90, 94).

In the normal operation, the data signals D1 (D2, D3) are buffered through the buffer 80. The NOR gate 84 non-logically combines the low level inversion column address strobe signal CASB and the low level test signal MDQ to generate a high level signal. The transfer gate 82 is turned on in response to the output signal of the NOR gate 84 to output the output signal of the buffer 80. The inverters 88 and 90 buffer the signal transmitted by the transmission gate 82 and output the buffered data as the data input signals DI1 (DI2 and DI3), respectively.

In the test operation, since the test signal MDQ becomes high level, the output signal of the NOR gate 84 becomes low level. Thus, the transfer gate 82 is off and the transfer gate 92 is on. The transmission gate 92 outputs a signal M1 / M2 output by the data input buffer 40, and the inverters 88 and 90 buffer the output signal of the transmission gate 92 so that the data input signal DI1 ( DI2, DI3)) respectively. The signal M1 is output as the data input signal DI2 and the signal M2 is output as the data input signals DI1 and DI3.

That is, in the test, if the control signal CHK is at the low level, the data signal DO is output as the data input signals DI0, DI1, DI2, and DI3. If the control signal CHK is at the high level, the data signal DO is Is output to the data input signals DIO and DI2, and an inverted signal of the data signal D0 is output to the data input signals DI1 and DI3. That is, the test circuit of the conventional semiconductor memory device can write various patterns by changing the control signal CHK. However, since the data paths in normal operation and the data paths in test operation are different, the delay difference between these paths causes a high margin of deterioration between the input data reaching the input / output driver and the clock driving the input / output driver at high frequencies. A marginal failure may occur in input / output masking and block write address masking functions used in memory.

6A and 6B are circuit diagrams of a data input buffer of a semiconductor memory device according to an embodiment of the present invention. In the case where a plurality of data input / output pins are tested by grouping four data input buffers, FIG. 6A is a data input buffer connected to a representative one of four pins. The circuit diagram of FIG. 1 corresponds to the data input buffer DIB0 of FIG. 1, and FIG. 6B is a circuit diagram of the data input buffers connected to the other three pins of four pins and corresponds to the data input buffers DIB1, DIB2, and DIB3 of FIG. It is. The circuit shown in FIG. 6A is composed of a buffer 100, a transfer gate 102, and inverters 104, 106, 108. In the normal operation and the test operation, the buffer 100 buffers and outputs the data signal DO and the transfer gate 102 is turned on in response to the low level inverted column address strobe signal CASB. Buffers the output signal and outputs it as the data input signal DI0. The circuit shown in FIG. 6B is composed of a buffer 110, a transfer gate 112, a tri-state buffer 118, and inverters 116, 120. In normal operation, the buffer 110 buffers and outputs the data signals D1 (D2 and D3), and the transfer gate 112 is turned on in response to the low level inverted column address strobe signal CASB. The three-state buffer 118 is turned on in response to the low level test signal MDQ to buffer the output signal of the transmission gate 112 to receive the data input signals DI1 (DI2, DI3). Output In the test operation, the tri-state buffer 118 is turned off in response to the high level test signal MDQ, so that the data input signals DI1 (DI2, DI3) are not output.

7 is a circuit diagram of a data input pattern generation circuit of a test circuit of a semiconductor memory device of the present invention, including NAND gates 130 and 142, inverters 132, 134, 136, 146 and 150, and transfer gates ( 138, 144, and 148). In the normal operation, since the test signal MDQ is at the low level, the output signal of the NAND gates 130 and 142 is at the high level. Therefore, the transmission gates 138, 144, and 150 are all turned off so that the signals MDI0 and BFDI0 are not generated. In the test operation, the test signal MDQ becomes high level and the control signal CHK becomes high or low level. If the control signal CHK is at a high level, the output signal of the NAND gate 130 is at a low level, and the output signal of the NAND gate 142 is at a high level. Thus, the transfer gate 138 is on, the transfer gate 144 is off, inverted by the inverter 132, and the buffered signal is output as the signal MDI0. In addition, the transmission gate 148 is turned on so that the signal buffered by the inverters 132 and 140 is output as the signal BFDI0. On the other hand, when the control signal CHK is at the low level, the output signal of the NAND gate 130 becomes high level and the output signal of the NAND gate 142 becomes low level. Thus, the transfer gate 138 is turned off and the transfer gate 144 is turned on so that the signal buffered by the inverters 132 and 140 is output as the signal MDIO. In addition, the transmission gate 148 is turned on to output a signal buffered by the inverters 132 and 140 as the signal BFDIO. That is, when the control signal CHK is at the high level during the test operation, the inverted signal of the data signal DI0 is output as the signal MDI0, the data signal DI0 is output as the signal BFDI0, and the control signal CHK is output. At the low level, the data signal DI0 is output as the signals MDI0 and BFDI0.

8A, 8B, and 8C are circuit diagrams of a data input driver of a semiconductor memory device of the present invention. In the case where a plurality of data input / output pins are tested by grouping four data input drivers, FIG. 8A is a representative one of four data input buffers. The circuit diagram of the data input driver connected to the input buffer DIO0 corresponds to the data input / output driver DIOD0 of FIG. 1 and FIG. 8B corresponds to two data input / output drivers DIOD1 and DIOD3 of the four data input drivers. 8C corresponds to the other data input / output driver DIOD2 of the four data input drivers. The input / output driver shown in FIG. 8A is composed of inverters 160, 162, 166, a transfer gate 164, and a data input / output driver 168. The data input signal DI0 is latched by the inverters 160 and 162. The latched signal is input to the data input / output driver 168 through the transmission gate 164 which is turned on in response to the clock signal DTCP. The input / output driver shown in FIG. 8B is composed of inverters 170, 172, 176, a transfer gate 174, and a data input / output driver 178. The data input signal DI1 (DI3) or the signal MDI0 is latched by the inverters 170 and 172. The latched signal is input to the data input / output driver 178 through the transmission gate 174 which is turned on in response to the clock signal DTCP. That is, the data input signal DI0 is output during the normal operation and the signal MDI0 is output during the test operation. The input / output driver shown in FIG. 8C is composed of inverters 180, 182, 186, a transfer gate 184, and a data input / output driver 188. The data input signal DI2 or the signal BFDI0 is latched by the inverters 180 and 182. This latched signal is input to the data input / output driver 188 through the transmission gate 184 which is turned on in response to the clock signal DTCP. That is, the data input signal DI2 is output during the normal operation and the signal BFDI0 is output during the test operation. In this way, the output signals of the data input / output drivers are output to the corresponding memory cell arrays and written.

Therefore, the test circuit of the semiconductor memory device of the present invention can write various data input patterns in response to the control signal CHK, and since the data input signal is waiting in front of the data input / output drivers in advance, the input / output driver There is no margin problem with the clock signal (DTCP) that controls the operation.Therefore, there is no loss of write time, and the block write address masking and input of enable / disable of the light is determined by data input through the data input / output pad. Implementing / output masking improves timing margins that enable valid input data to disable the clock signal (DTCP) before the input / output driver enable clock signal is enabled.

The test circuit of the semiconductor memory device of the present invention performs a write operation by inputting data through a representative data input / output pin of each group by grouping a plurality of input / output pins into a predetermined number of groups during a multi-chip test. In this case, it is possible to generate various light patterns, thereby effectively verifying the fail due to the coupling effect between adjacent input / output lines at high frequencies.

In addition, the margin is improved between the input data and the clock signal driving the input / output driver, thereby improving timing margin when implementing the input / output masking and block write address masking functions used in the graphic memory.

Claims (8)

The plurality of data input / output pins, a plurality of data input / output pads respectively connected to the data input / output pins, and a plurality of data for inputting and buffering data from the plurality of data input / output pads, respectively. Input buffers and a plurality of data input drivers for storing data from the plurality of data input buffers into respective corresponding memory cells are classified into a predetermined number of groups in order, thereby entering one data input of each group. A test circuit of a semiconductor memory device for performing a test by inputting data through an output / output pad, wherein each group of data input buffers buffers and outputs a first data signal in response to an inverted column address strobe signal. 1 data input buffer; And a plurality of second data inputs configured to buffer and output the even-numbered second data signals and the odd-numbered third data signals, respectively, except for the first data signal in response to the inverted column address strobe signal in normal operation. And a buffer, wherein each group of data input drivers comprises: a first data input driver for latching the first data signal during normal operation and a test operation to output the latched first data signal in response to a clock signal; In the normal operation, the even-numbered second data signals are respectively latched and the latched even-numbered second data signals are output in response to the clock signal. In the test operation, the first signal is latched and the clock is respectively latched. An even-numbered second data input driver respectively outputting the latched first signal in response to a signal; And latching the odd-numbered third data signals in normal operation and outputting the latched odd-numbered third data signals in response to the clock signal, respectively, in the test operation, respectively latching the second signal and the clock. And an odd third data input driver for outputting the latched second signal in response to a signal, respectively. 2. The apparatus of claim 1, wherein the means for generating the first signal comprises: first switching means for transmitting an output signal of the first data input buffer in response to a first state of a signal combining a control signal and the test signal; ; And second switching means for transmitting a signal inverting an output signal of the first data input buffer in response to a second state of the combined signal. The semiconductor memory device of claim 1, wherein the means for generating the second signal comprises third switching means for transmitting an output signal of the first data input buffer in response to the test signal. Test circuit. The data storage device of claim 1, wherein the first data input buffer comprises: a first buffer configured to buffer a first data signal; Fourth switching means for transmitting an output signal of the first buffer in response to the inverted column address strobe signal; And first inverters for buffering and outputting the output signal of the fourth switching means. The data storage device of claim 1, wherein the second data input buffer comprises: a second buffer configured to buffer a data signal; Fifth switching means for transmitting an output signal of the second buffer in response to the inverted column address strobe signal; A second inverter for inverting the output signal of the fifth switching means; And a three-state inverter configured to output an output signal of the second inverter in a normal operation in response to the test signal and not output an output signal of the second inverter in a test operation. Test circuit of the device. 2. The apparatus of claim 1, wherein the first data input driver comprises: a first latch for latching the first data signal; Sixth switching means for transmitting the output signal of the first latch in response to the clock signal; And a first driver for inputting and driving the output signal of the sixth switching means. The display device of claim 1, wherein the second data input driver comprises: a second latch for latching the second data signal or the first signal; Seventh switching means for transmitting the output signal of the second latch in response to the clock signal; And a second driver for inputting and driving the output signal of the seventh switching means. 2. The apparatus of claim 1, wherein the third data input driver comprises: a third latch for latching the third data signal or the second signal; Eighth switching means for transmitting an output signal of the third latch in response to the clock signal; And a third driver for inputting and driving the output signal of the eighth switching means.