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KR100186525B1 - Structure for phase change type optical disk - Google Patents

Structure for phase change type optical disk Download PDF

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Publication number
KR100186525B1
KR100186525B1 KR1019960045263A KR19960045263A KR100186525B1 KR 100186525 B1 KR100186525 B1 KR 100186525B1 KR 1019960045263 A KR1019960045263 A KR 1019960045263A KR 19960045263 A KR19960045263 A KR 19960045263A KR 100186525 B1 KR100186525 B1 KR 100186525B1
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South Korea
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phase change
recording
change type
type optical
recording layer
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KR1019960045263A
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Korean (ko)
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KR19980026723A (en
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강해용
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구자홍
엘지전자주식회사
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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/004Recording, reproducing or erasing methods; Read, write or erase circuits therefor
    • G11B7/0045Recording
    • G11B7/00454Recording involving phase-change effects
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302Metals or metalloids
    • G11B2007/24306Metals or metalloids transition metal elements of groups 3-10
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302Metals or metalloids
    • G11B2007/24316Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)

Abstract

상변화형 광디스크 구조에 관한 것으로서, 폴리카보네이트 기판상에 형성된 제 1유전체층과 제 2유존체층 사이에 형성된 기록층인 AgInSbTe합금에 Cr-Te(크롬-텔루륨)를 첨가하여 덮어쓰기시의 매체 유등을 방지함으로써 반복기록등의 특성을 향상시킬 수 있도록 한 것이다.A phase change type optical disk structure, comprising: Cr-Te (chromium-tellurium) added to an AgInSbTe alloy, which is a recording layer formed between a first dielectric layer and a second dielectric layer, formed on a polycarbonate substrate, and the like This is to prevent the repetitive recording and other characteristics.

Description

상변화형 광디스크 구조Phase change optical disk structure

본 발명은 고밀도 상변화형 광디스크에 관한 것으로서, 특히 기록층의 유동을 방지하도록한 상변화형 광디스크 구조에 관한 것이다.The present invention relates to a high density phase change type optical disc, and more particularly, to a phase change type optical disc structure which prevents the flow of a recording layer.

일반적으로 상변화형 광디스크는 레이저광을 기록층에 집중시켜 그 펄스출력과 펄스폭에 대응하여 기록층의 온도가 융점 이상으로 상승되었을때 급냉시킴으로써 기록층을 비정질 상태로 만들어 이를 기록비트로 이용하고, 소거시에는 다시 기록층위에 상기 기록시와는 달리, 낮은 펄스출력과 펄스폭의 레이저 광을 조사시켜 기록층이 온도를 결정화 온도 근처로 상승시킨후 서냉시킴으로써 결정화 상태로 만든다.In general, a phase change type optical disc concentrates laser light on a recording layer and rapidly cools the recording layer when its temperature rises above the melting point in response to its pulse output and pulse width, thereby making the recording layer amorphous and using it as a recording bit. At the time of erasing, unlike at the time of the above recording, the laser is irradiated with a low pulse output and a pulse width on the recording layer again to raise the temperature near the crystallization temperature, and then cool it to bring it to a crystallization state.

상변화형 기록재료에서는 이러한 결정질과 비정질 상태의 변환이 가역적으로 발생하므로 반복기록(Rewritable)광디스크 재료로 주목을 받고 있다.In the phase change type recording material, since the conversion of the crystalline and amorphous states occurs reversibly, it is attracting attention as a rewritable optical disc material.

상변화형 광디스크에 있어서 정보재생 방법은 이러한 상( Phase)에서의 반사율의 상이함, 예를 들명 결정상태(소거상태)의 반사율이 비정질 상태(기록상태)의 반사율에 비하여 높은 것을 이용하여 정보를 재생한다.In the phase change type optical disc, the information reproducing method uses information different in reflectance in such a phase, for example, in which the reflectance of the crystal state (erased state) is higher than that of the amorphous state (recording state). Play it.

그리고, 레이저광을 폴리카보네이트 기판측으로부터 조사시켜 기록층을 결정화 상태로 만들수 있도록 소정파워를 인가하여 초기화 시킨다음, 정보기록시에는 레이저 조사부를 용융시킨후 급냉시켜 비정질 상태의 스폿(Spot)을 만든다.Then, the laser beam is irradiated from the polycarbonate substrate side and initialized by applying a predetermined power so that the recording layer can be crystallized. Then, the information irradiance is melted and quenched to form an amorphous spot. .

다시 비정질 상태의 스폿위에 그보다 낮은 세기의 레이저를 조사시켜 결정상태로 되돌리는 과정을 반복하여 덮어쓰기(Overwriting)를 실시한다.Again, overwriting is repeated by irradiating a laser with a lower intensity on the spot in the amorphous state and returning it to the crystalline state.

종래의 상변화형 기록매체는 도 1에 나타내 바와 같이, 폴리카보네이트(Polycarbonate) 기판(10)에 형성된 제 1유전체층(ZnS-SiO2)(20)과, 제 1유전체층(20)상에 상변화형 기록물질로 형성된 기록층(AgInSbTe)(30), 기록층(30)상에 순차로 형성된 제 2유전체층(ZnS-SiO2)(40), 금속의 반사층(Al합금)(50) 및 자외선 경화 수지(UV resin)로된 보호층(60)으로 구성된다.As shown in FIG. 1, a conventional phase change type recording medium has a phase change type on a first dielectric layer (ZnS-SiO 2) 20 and a first dielectric layer 20 formed on a polycarbonate substrate 10. A recording layer (AgInSbTe) 30 formed of a recording material, a second dielectric layer (ZnS-SiO 2 ) 40 sequentially formed on the recording layer 30, a metal reflective layer (Al alloy) 50, and an ultraviolet curable resin It consists of a protective layer 60 of (UV resin).

이와 같은 기록층(30)의 상, 하부에 제 1및 제 2유전체층(20)(30)은 레이저광의 조사에 의하여 기록층(30)을 직접적으로 가열시켜서 손상되는 것을 방지함과 동시에 기록층(30)이 산화 및 가열로 비산하는 것을 방지하고자 하기 때문이다.The first and second dielectric layers 20 and 30 above and below the recording layer 30 directly heat the recording layer 30 by the irradiation of laser light to prevent damage and to prevent the recording layer ( 30) is intended to prevent scattering by oxidation and heating.

특히 제 2유전체층(40)은 레이저광을 효율적으로 기록층(30)에 흡수시켜 기록층(30)의 반사율의 변화를 크게 하는 인헨스(Enhance)효과를 발휘하여 상변화형광기록매체의 감도를 향상시키는 역할을 하고 있다.In particular, the second dielectric layer 40 effectively absorbs laser light into the recording layer 30 to exhibit an Enhance effect of increasing the change in reflectance of the recording layer 30, thereby improving the sensitivity of the phase change fluorescent recording medium. It plays a role to improve.

이러한 구조의 상변화형 광기록매체에서 제 1및 제 2유전체층(20)(40)으로 사용하고 있는 ZnS-SiO2는 비정질상의 균일한 막을 얻을수 있고 열팽창 계수가 다른 유전체층보다 상대적으로 작으며, 특히 광학적으로 높은 굴절율을 갖고 있어 폴리카보네이트 기판(10)과의 기록층(30)의 중간값으로 설계될수 있기 때문에 입사시키는 레이저 광을 무반사 조건으로 설계할 수가 있다.ZnS-SiO 2, which is used as the first and second dielectric layers 20 and 40 in the phase change type optical recording medium having such a structure, is capable of obtaining an amorphous uniform film and having a relatively smaller coefficient of thermal expansion than other dielectric layers. Since it has an optically high refractive index and can be designed at the intermediate value of the recording layer 30 with the polycarbonate substrate 10, the incident laser light can be designed under antireflection conditions.

따라서, 상변화 광기록매체를 저파워의 레이저로도 소거가능하고 상변화형 기록매체가 받는 열적 스트레스가 작아진다.Therefore, the phase change optical recording medium can be erased even by a low power laser and the thermal stress applied to the phase change recording medium is reduced.

또한, 기록재료의 구조변화(결정질-비정질)에 의한 광학 상수이 차이를 반사도 변화로 읽어 내는 것이 상변화 광디스크의 특징으로 현재 많은 물질 개발이 이루어지고 있고 대표적인 기록 재료가 GeTeSb 합금계이다.In addition, it is a feature of phase change optical discs to read out the difference of optical constants due to the structural change (crystalline-amorphous) of the recording material as the change in reflectivity. Currently, many materials have been developed and the representative recording material is GeTeSb alloy.

이 재료는 이미 오래 전부터 10-20m/s의 고속 환경하에서 컴퓨터 보조 기억장치에필요한 재료로 꾸준하게 사용되어 왔는데 고속에서 기록 및 소거 가능하기 위해서는 결정화 속도가 빠른 것이 중요한데 이들 재료의 조성중에서 특히 GeTe-Sb2Te3 가상 이원계 선상에 있는 조성의 결정화 속도는 무려 30-100ns에 달하면서도 결정질과 비정질의 가역적인 변화를 만족하여 이미 상품화되어 있는 경우도 많다.This material has been used steadily for a long time in computer-assisted storage in high speed environments of 10-20 m / s . It is important that the crystallization rate is high in order to be able to record and erase at high speeds. The crystallization rate of the composition on the line of Sb2Te3 virtual binary system reaches 30-100ns, but it is already commercialized to satisfy the reversible change of crystalline and amorphous.

물노 기록 층만이 디스크를 구성하는 핵심 기술은 아닌데 기록 매체가 갖고 있는 고유한 성질도 함께 구성되어 있는 유전체막의 조성이나 성지, 두께 등에 영향을 받기 때문이다.The water furnace recording layer is not the only core technology for constituting a disk because it is influenced by the composition, the holy land, the thickness, and the like of the dielectric film, which also includes the unique properties of the recording medium.

이것은 기록모드가 상변화형 디스크의 경우에는 열에네지를 이용하여 상의 가역적인 반응을 이용하기때문에 광학적인 효과와 열적인 효과, 그리고 기계적인 효과를 복합적으로 고려해야 하기 때문이다.This is because, in the case of the phase change type disc, the recording mode uses thermal energy to use the reversible reaction of the phase, and thus the optical, thermal and mechanical effects must be considered in combination.

현재 DVD(Digital Video Disc)를 위시한 고밀도 길고 기술은 꾸준한 발전을 거듭하고 있고, 재 기록형은 광자기 디스크의 경우는 복잡한 구성에도 불구하고 뛰어난 데이타 안정성 때문에 그리고 상변화 디스크의 간단한 기록 및 재생 기술이 서로 경합하는 가운데 기판에서의 기록 밀도를 고밀도로 하기 위하여 단파장 광원을 채용하는 등의 방법을 이용하여 밀도 향상에 박차를 가하고 있는 실정이다.Today, high density, long and dense technologies including DVD (Digital Video Disc) are steadily evolving, and the rewritable type of magneto-optical discs, due to their excellent data stability despite the complex configuration, and the simple recording and reproducing technology of phase change discs. In order to increase the recording density on the substrate while competing with each other, a situation in which a short wavelength light source is employed is used to increase the density.

따라서 상변화형 광디스크의 장점을 십분 살리고 단점을 극복하는 지름길은 무엇보다도 안정적인 기록 재생이 가능한 기록 재료를 개발하는 데 있다고 할 것이다.Therefore, the shortest way to take advantage of the advantages of the phase change type optical disc and overcome the disadvantages is to develop a recording material capable of stable recording and reproduction.

최근 일본이 Ricoh 사 및 Osaka대학에서는 사원계의 AgInSbTe를 중심으로 CD-E(Cumpact Disc - Eraseable)응용을 위한 노력을 경주하고 있다.Recently, Ricoh and Osaka University in Japan are making efforts to apply CD-E (Cumpact Disc-Eraseable) application mainly to AgInSbTe of the employee industry.

또한, 상변화형 광디스크는 조직이 미세하고 가역적인 상변화가 잘 이루어지는 재료인 AgInSbTe는 특히 마크의 길이를 변조하고 고 밀도를 이루는 마크 에지리코딩(Mark Edge Recording)시의 지터(Jitter)가 작고 정확하게 길이를 제어할 수 있는 제반 장점을 지니고 있으며 소거비가 GeSbTe에 비해 월등히 높다는 장점이 있다.In addition, AgInSbTe, a phase change type optical disk, is a material whose structure is fine and reversible phase change is particularly small and precisely jitter during mark edge recording, which modulates the mark length and achieves high density. It has all the advantages of controlling the length, and the elimination ratio is much higher than that of GeSbTe.

종래기술에 따른 상변화형 광디스크의 기록층 재료는 기본적으로 혼합상을 만들기가 대단히 어렵고 반복기록 특성이 나쁜 것이 단점으로 파악되고 있다.The recording layer material of the phase change type optical disc according to the prior art is considered to have a disadvantage in that it is extremely difficult to make a mixed phase, and the repetitive recording characteristics are bad.

또한, CD-E에 필요한 반사도의 차이가 크기때문에 감도는 뛰어나 정보의 기록에는 유리하나 매체의 광흡수가 높아 덮어쓰기시의 매체 유동이 심하게 일어나 기록된 자료의 반복이용에 단점으로 작용한다.In addition, since the difference in reflectivity required for CD-E is large, the sensitivity is high, which is advantageous for recording information, but the light absorption of the medium is high, resulting in severe media flow during overwriting, which is a disadvantage in repeated use of recorded data.

본 발명은 이와 같은 종래기술의 문제점을 해결하기 위해 안출한 것으로서, 고융점 재료인 Cr-Te을 기록층 내에 첨가하여 덮어쓰기시 매체 유동을 방지하여 반복기록등의 특성을 향상시킬 수 있도록 한 상변화형 광디스크 구조를 제공함에 있다.The present invention has been made to solve the problems of the prior art, by adding a high melting point material Cr-Te in the recording layer to prevent the media flow during overwriting to improve the characteristics such as repeat recording It is to provide a changeable optical disk structure.

도 1은 종래기술에 따른 상현화형 광디스크의 단면도,1 is a cross-sectional view of an image development type optical disk according to the prior art,

도 2는 본 발명에 따른 상변화형 광디스크의 단면도이다.2 is a cross-sectional view of a phase change type optical disk according to the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

10 : 폴리카보네이트 기판 20 : 제 1유전체층10 polycarbonate substrate 20 first dielectric layer

30 : 기록층 40 : 제 2유전체층30: recording layer 40: second dielectric layer

50 : 반사층 60 : 보호층50: reflective layer 60: protective layer

본 발명에 따른 상변화형 광디스크 구조의 특징은, 고융점 재료인 Cr-Te을 기록 층에 2wt%~15wt% 정도 첨가하여 기록막의 유동현상을 방지하는데 있다.A feature of the phase change type optical disc structure according to the present invention is that Cr-Te, which is a high melting point material, is added to the recording layer by about 2wt% to 15wt% to prevent the flow of the recording film.

이하, 본 발명에 따른 상변화형 광디스크 구조의 바람직한 실시예를 첨부된 도면을 참조하여 설명하면 다음과 같다.Hereinafter, a preferred embodiment of a phase change type optical disk structure according to the present invention will be described with reference to the accompanying drawings.

도 2는 본 발명에 따른 상변화형 광디스크의 단면도이다.2 is a cross-sectional view of a phase change type optical disk according to the present invention.

도 2에 나타내 바와 같이, 폴리카보네이트(Polycarbonate) 기판(10)을 스퍼터링장치에 장착한 후 제 1유전체층(20)으로는 ZnS-SiO2를 약 1000Å~3000Å두께로 도포한다.As shown in FIG. 2, after the polycarbonate substrate 10 is mounted on the sputtering apparatus, ZnS-SiO 2 is coated with a thickness of about 1000 kPa to about 3000 kPa as the first dielectric layer 20.

이어, AgInSbTe에 Cr-Te(크롬-텔루륨)를 첨가한 기록층(30)을 약 100Å~300Å의 두께로 도포한다.Subsequently, a recording layer 30 having Cr-Te (chromium-tellurium) added to AgInSbTe is applied to a thickness of about 100 kPa to 300 kPa.

이때, 기록층(30)에 첨가되는 Cr-Te의 양은 2wt%~15wt%이다.At this time, the amount of Cr-Te added to the recording layer 30 is 2wt% to 15wt%.

만약, 기록층(30)에 첨가되는 Cr-Te의 양이 2%이하이면 매체 유동의 억제 효과를 발휘하기 어렵고, 15%이상이면 기록층 자체의 열화가 생겨 기록층의 감도가 떨어지게 된다.If the amount of Cr-Te added to the recording layer 30 is less than or equal to 2%, it is difficult to exert an effect of suppressing the medium flow, and if it is more than 15%, the recording layer itself is deteriorated and the sensitivity of the recording layer is reduced.

여기서, 기록층(30)의 재료는 AgInSbTe의 미세조직을 제어하기 위한 B, C, N(붕소, 탄소, 질소)과 결정화 속도를 제어하기 위한 Ti, V(티타늄, 바나듐)등을 첨가한다.Here, the material of the recording layer 30 is added with B, C, N (boron, carbon, nitrogen) for controlling the microstructure of AgInSbTe, Ti, V (titanium, vanadium), etc. for controlling the crystallization rate.

따라서, 이런 재료를 사용한 디스크는 특히 고밀도 펄스폭 기록법과 복합 펄스를 사용한 마크의 길이를 제어하는 등의 기록기술에 적절히 조합하여 고속, 고밀도 기록시에 적합한 디스크를 제조할 수 있다.Therefore, a disk made of such a material can be suitably combined with a recording technique such as controlling the length of a mark using a high density pulse width recording method and a compound pulse, so that a disk suitable for high speed and high density recording can be produced.

이어, 제 1유전체층(20)과 동일한 ZnS-SiO2를 약 100Å~300Å의 두께로 제 2유전층(40)을 도포한다.Next, the second dielectric layer 40 is coated with the same ZnS-SiO 2 as the first dielectric layer 20 to a thickness of about 100 kPa to about 300 kPa.

이어, 반사층(50)으로 Al-Ti금속층을 약 500Å~1000Å두께로 도포한다.Subsequently, an Al-Ti metal layer is applied to the reflective layer 50 at a thickness of about 500 kPa to 1000 kPa.

마지막으로 기판의 보호를 위하여 자외선 경화수지(UV resin)로된 보호층(60)으로 구성된다.Finally, a protective layer 60 made of UV resin for protection of the substrate.

본 발명에 의한 Cr-Te이 첨가된 기록층(30)의 경우 Cr-Te의 융점이 AgInSbTe보다는 훨씬 높고 입자의 크기가 AgInSbTe가 대단히 미세하므로 쉽게 믹싱이 가능하여 기록시 감도이 저하를 방지 할 수 있으며, 반복되는 열 싸이클의 경우에도 매체의 유동이 일어나지 않는 장점을 지니게 된다.In the case of the recording layer 30 added with Cr-Te according to the present invention, since the melting point of Cr-Te is much higher than that of AgInSbTe, and the particle size is very fine, AgInSbTe can be easily mixed to prevent deterioration of sensitivity during recording. However, even in the case of repeated thermal cycles, there is an advantage that the flow of the medium does not occur.

또한, 순수하게 AgInSbTe 만으로 이루어진 기록층(30)의 재료는 기록이 이루어질때 연속적으로 반복되는 열 싸이클에 의해 용융되었다가 다시 냉각되는 연속적인 과정을 되풀이 한다.In addition, the material of the recording layer 30 consisting purely of AgInSbTe repeats a continuous process of melting and cooling again by a thermal cycle which is continuously repeated when recording is performed.

이와 같은 열 싸이클을 받게되면 기록층(30)의 재료가 용융된 상태에서 한쪽으로 이동하는 유동현상이 일어난다.Receiving such a thermal cycle causes a phenomenon in which the material of the recording layer 30 moves to one side in a molten state.

그러나 Cr-Te이 첨가된 기록층(30)의 경우는 이런 유동현상을 방지할 수 있다.However, in the case of the recording layer 30 to which Cr-Te is added, such flow phenomenon can be prevented.

또한, Cr-Te의 경우는 융점이 약 1200℃정도이나 AgInSbTe의 경우는 약 600℃이다.In the case of Cr-Te, the melting point is about 1200 ° C, while AgInSbTe is about 600 ° C.

즉, 정보의 기록을 위하여 기록층이 용융되는 경우 600℃이상이 되면 AgInSbTe는 완전히 용융이 이루어지나 Cr-Te의 경우는 융점이 약 1200℃정도이므로 녹지 않고 고체의 상태로 남아 있게된다.That is, when the recording layer is melted to 600 ° C. or higher for the recording of information, AgInSbTe is completely melted, but in the case of Cr-Te, the melting point is about 1200 ° C., so that the solid remains without melting.

따라서, 이들이 여러번의 길고과 소거과정을 거치는 동안에도 고체 상태로 남아 있게 됨으로서 AgInSbTe가 녹아 유동이 발생하려고 하는 경우에 이들의 이동을 방해하여 유동을 억제하는 효과를 일으켜 결과적으로 디스크의 반복기록 특성의 향상을 가져온다.As a result, they remain solid during many long and erase processes, and when AgInSbTe melts and flow occurs, it inhibits their movement and inhibits flow, resulting in an improvement in the disc's repeatability. Bring it.

본 발명에 상변화형 광디스크 구조는 고융점 재료인 Cr-Te을 기록층 내에 첨가하여 덮어쓰기시의 매체 유동을 방지함으로써 반복기록등의 특성을 향상시는 효과가 있다.The phase change type optical disc structure according to the present invention has the effect of improving the characteristics of repetitive recording and the like by adding Cr-Te, which is a high melting point material, into the recording layer to prevent the medium flow during overwriting.

Claims (3)

폴리카보네이트 기판을 구비한 상변화형 광디스크에 있어서,In a phase change type optical disk having a polycarbonate substrate, 폴리카보네이트 기판상에 형성된 제 1유전체층과;A first dielectric layer formed on the polycarbonate substrate; 상기 제 1유전체증상에 고융점재료인 Ct-Te를 첨가한 물질로 형성된 기록층과;A recording layer formed of a material in which Ct-Te, which is a high melting point material, is added to the first dielectric image; 상기 기록층상에 형성된 제 2유전체층과;A second dielectric layer formed on the recording layer; 상기 반사층에 형성된 자외선 경화수지층층으로 구성됨을 특징으로 하는 상변화형 광디스크 구조.Phase change type optical disk structure, characterized in that consisting of the ultraviolet curable resin layer formed on the reflective layer. 제 1항에 있어서,The method of claim 1, 상기 기록층에 첨가한 Cr-Te물질의 융점이 1200℃임을 특징으로 하는 상변화형 광디스크 구조.A phase change type optical disc structure, characterized in that the melting point of the Cr-Te material added to the recording layer is 1200 ℃. 제 1항에 있어서,The method of claim 1, 상기 기록층에 첨가한 Cr-Te물질의 양이 2~15wt%임을 특징으로 하는 상변화형 광디스크 구조.Phase change type optical disk structure, characterized in that the amount of Cr-Te material added to the recording layer is 2 ~ 15wt%.
KR1019960045263A 1996-10-11 1996-10-11 Structure for phase change type optical disk KR100186525B1 (en)

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
WO2003098620A1 (en) * 2002-05-16 2003-11-27 Samsung Electronics Co., Ltd. Recording medium having high melting point recording layer, information recording method thereof, and information reproducing apparatus and method therefor

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KR19980059949A (en) * 1996-12-31 1998-10-07 구자홍 Phase change optical disk and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003098620A1 (en) * 2002-05-16 2003-11-27 Samsung Electronics Co., Ltd. Recording medium having high melting point recording layer, information recording method thereof, and information reproducing apparatus and method therefor
CN100365719C (en) * 2002-05-16 2008-01-30 三星电子株式会社 Recording medium having high melting point recording layer, information recording method thereof, and information reproducing apparatus and method therefor

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