KR0121148Y1 - Centering measurement apparatus for semiconductor device - Google Patents
Centering measurement apparatus for semiconductor device Download PDFInfo
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- KR0121148Y1 KR0121148Y1 KR2019950000540U KR19950000540U KR0121148Y1 KR 0121148 Y1 KR0121148 Y1 KR 0121148Y1 KR 2019950000540 U KR2019950000540 U KR 2019950000540U KR 19950000540 U KR19950000540 U KR 19950000540U KR 0121148 Y1 KR0121148 Y1 KR 0121148Y1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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Abstract
본 고안에 의한 반도체 장치의 센터링 측정기구는 한쪽단은 글라스웨이퍼의 측면과 접촉되는 접촉면을 가지고, 그 반대단은 눈금을 새긴 측정기둥이 형성되며, 상기 측정기둥의 측부에 끝단에는 나사를 형성시킨 가이드축이 결합되고, 이 가이드축에 스프링을 끼워 항상 일정한 방향으로 움직이도록 부세된 웨이퍼가이드와, 상기 웨이퍼가이드가 이동될때에 상기 측정기둥 상에 새긴 눈금과 교차되게 위치하는 측정선과, 가이드축이 결합되는 관통홀을 형성시킨 몸체와, 상기 측정기둥에 형성시킨 눈금의 원점눈금이 상기 측정선에 일치되는 위치로 스프링이 압축되도록 상기 관통홀에 관통삽입시킨 후에, 이를 공정시키기 위하여 상기 가이드축 끝단에 형성시킨 나사에 결합되는 너트를 포함하여 이루어진다.The centering measuring mechanism of the semiconductor device according to the present invention has one end having a contact surface in contact with the side surface of the glass wafer, and the opposite end is formed with a graduated measuring pillar, and a screw is formed at the end of the measuring pillar. The guide shaft is coupled, the wafer guide biased so that it always moves in a constant direction by inserting a spring on the guide shaft, the measurement line positioned to intersect the graduation mark on the measuring column when the wafer guide is moved, and the guide shaft The guide shaft end is inserted into the through-hole so that the spring is compressed to a position where the reference point scale of the scale formed in the measuring column and the measuring column is aligned with the measuring line. It comprises a nut coupled to the screw formed in.
Description
제 1 도는 본 고안에 의한 반도체 장치의 센터링 측정기구를 설명하기 위한 도면.1 is a view for explaining a centering measuring mechanism of a semiconductor device according to the present invention.
*도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
10 : 글라스웨이퍼 11 : 스핀들10: glass wafer 11: spindle
12 : 진공관 13 : 척12 vacuum tube 13 chuck
100 : 센터링 측정기구 110 : 웨이퍼가이드100: centering measuring instrument 110: wafer guide
111 : 가이드축 112 : 스프링111: guide shaft 112: spring
113 : 측정기둥 114 : 오목면113: measuring column 114: concave surface
120 : 몸체 121 : 홈120: body 121: groove
122 : 관통홀 130 : 너트122: through hole 130: nut
140 : 회전축140: rotation axis
본 고안은 반도체 장치의 센터링(centering) 측정기구에 관한 것으로, 웨이퍼를 회전시키는 반도체 장치의 척에 안착되어 회전하게 되는 웨이퍼의 중심과 웨이퍼가 안착되는 척의 회전중심과의 일치 여부를 측정하기에 적당하도록 한 센터링 측정기구에 관한 것이다.The present invention relates to a centering measuring mechanism of a semiconductor device, and is suitable for measuring a coincidence between a center of a wafer which is seated on a chuck of a semiconductor device that rotates the wafer and a center of rotation of the chuck on which the wafer is seated. To a centering measuring instrument.
일반적으로 반도체 제조공정에서는 웨이퍼를 회전시키며 실시하는 공정이 많으며, 특히 웨이퍼 표면에 각 층(layer)을 형성시키기 위한 포토레지스 코팅(photoresist coating) 등의 공정에서는 웨이퍼를 회전(spin)시키면서 수행하고 있으며, 이때 웨이퍼는 모터(motor)의 스핀들에 연결시킨 척과 그 회전중심이 일치되어 회전해야만 일정 두께의 포토레지스트가 웨이퍼 표면에 코팅되어 형성된다.In general, a semiconductor manufacturing process is performed by rotating a wafer. In particular, a process such as photoresist coating for forming each layer on a wafer surface is performed while rotating a wafer. In this case, the wafer is formed by coating a photoresist of a predetermined thickness on the surface of the wafer only when the chuck connected to the spindle of the motor and the center of rotation coincide with each other.
그런, 종래의 반도체 장치에서 웨이퍼의 회전중심과 모터의 스핀들(spindle)에 의해 회전하게 되는 척의 회전중심을 일치시키기 위해서는 별도의 기구없이 투명하고 중심이 표시되어 있는 글라스웨이퍼를 척에 안착시키고, 작업자가 육안으로 글라스웨이퍼의 표시된 중심과 척의 회전중심이 일치되도록 조정한 후에, 글라스웨이퍼를 느린속도로 회전시켜서 글라스웨이퍼의 중심과 척의 회전중심의 일치여부를 판단함으로써 오차가 발생되어 웨이퍼의 회전시에 웨이퍼의 회전중심과 척의 회전중심과의 일치가 용이하지 않으며, 이로 인하여 웨이퍼를 회전시키며 실시하는 반도체 제조공정에서의 작업시간이 커지게 되는 문제가 발생되었다.In order to match the center of rotation of the wafer with the center of rotation of the chuck which is rotated by the spindle of the motor in such a semiconductor device, a transparent and centered glass wafer is placed on the chuck without a separate mechanism. After visually adjusting the center of the glass wafer to match the center of rotation of the chuck, rotate the glass wafer at a slow speed to determine whether the center of the glass wafer is consistent with the center of rotation of the chuck. It is not easy to coincide with the center of rotation of the wafer and the center of rotation of the chuck, which causes a problem that the working time in the semiconductor manufacturing process of rotating the wafer is increased.
본 고안은 이러한 문제를 해결하기 위해 인출된 것으로, 웨이퍼를 회전시키는 반도체 장치에 별도의 센터링 측정기구를 부착하여 웨이퍼의 회전중심과 척의 회전중심과의 일치여부 확인을 용이하게 하는 것이 그 목적이다.The present invention has been drawn to solve this problem, the purpose is to attach a separate centering measuring mechanism to the semiconductor device for rotating the wafer to facilitate checking whether the center of rotation of the wafer and the center of rotation of the chuck.
본 고안에 의한 반도체 장치의 센터링 측정기구는 한쪽단은 글라스웨이퍼의 측면과 접촉되는 접촉면을 가지고, 그 반대단은 눈금을 새긴 측정기둥이 형성되며, 측정기둥의 측부에 끝단에는 나사를 형성시킨 가이드축이 결합되고, 이 가이드축에 스프링을 끼워 항상 일정한 방향으로 움직이도록 부세된 웨이퍼가이드와, 웨이퍼가이드가 이동될때에 측정기둥 상에 새긴 눈금과 교차되게 위치하는 측정선과, 가이드축이 결합되는 관통홀을 형성시킨 몸체와, 측정기둥에 형성시킨 눈금의 원점눈금이 측정선에 일치되는 위치로 스프링이 압축되도록 관통홀에 관통 삽입시킨 후에, 이를 고정시키기 위하여 가이드축 끝단에 형성시킨 나사에 결합되는 너트를 포함하여 이루어진다. 이하 첨부된 도면을 참고로 본 고안에 의한 반도체 장치의 센터링 측정기구의 구성 및 동작을 설명하면 다음과 같다.The centering measuring mechanism of the semiconductor device according to the present invention has one end having a contact surface in contact with the side surface of the glass wafer, and the opposite end is formed with a graduated measuring pillar, and a guide having a screw formed at the end of the measuring pillar. The guide is coupled to the shaft, and the guide guide is pushed so that it always moves in a constant direction by inserting a spring on the guide shaft, the measuring line positioned to intersect the scale written on the measuring column when the guide guide is moved, and the penetration through which the guide shaft is coupled. After inserting through the through hole so that the spring can be compressed to the position where the origin scale of the scale formed on the measuring column and the measuring column coincides with the measuring line, it is connected to the screw formed at the end of the guide shaft to fix it. It consists of a nut. Hereinafter, the configuration and operation of the centering measuring mechanism of the semiconductor device according to the present invention will be described with reference to the accompanying drawings.
제 1 도는 본 고안에 의한 반도체 장치의 센터링 측정기구를 설명하기 위한 도면으로, 제 1 도의 (a)는 본 고안에 의한 반도체 장치의 센터링 측정기구의 분해도이고, 제 1 도의 (b)는 본 고안에 의한 반도체 장치의 센터링 측정기구의 동작을 설명하기 위한 도면이다.1 is a view for explaining the centering measuring mechanism of the semiconductor device according to the present invention, Figure 1 (a) is an exploded view of the centering measuring mechanism of the semiconductor device according to the present invention, Figure 1 (b) is the present invention It is a figure for demonstrating operation | movement of the centering measuring mechanism of a semiconductor device by this.
반도체 제조공정에서 회전시킬 웨이퍼의 회전중심과 척의 회전중심을 확인하기 위하여 척에 안착시켜 회전시키는 글라스웨이퍼의 회전중심을 확인하기 위한 본 고안의 반도체 장치의 센터링 측정기구(100)는 제 1 도의 (a)와 같이, 한쪽단은 글라스웨이퍼의 측면과 접촉되는 접촉면으로 오목면(114)으로 형성시키고, 그 반대단은 눈금을 측상으로 새긴 측정기둥(113)을 부착시키며, 측정기둥의 측부에는 스프링(112)이 각각 끼워지며, 끝단에는 나사를 형성시킨 가이드축(111)을 부착시킨 웨이퍼가이드(110)와, 웨이퍼가이드가 이동될때에 측정기둥의 눈금과 교차하는 측정선에서 눈금을 측정할수 있도록 하기 위하여 측정기둥이 삽출되는 홈(121)을 형성시키고, 홈의 주변에는 웨이퍼가이드의 가이드축과 대응하는 관통홀(122)을 형성시킨 몸체(120)와, 웨이퍼가이드의 측정기둥을 몸체의 홈에 삽입시키고, 웨이퍼가이드의 가이드축을 측정기둥에 형성시킨 눈굼의 원점눈금이 홈이 가장자리인 측정선상에 일치되는 위치로 스프링이 압축되도록 관통홀에 관통삽입시킨 후에, 이를 고정시키기 위하여 가이드축 끝단에 형성시킨 나사에 결합시킨 너트(130)와, 웨이퍼가이드와 결합된 몸체를 고정하여 회전이동시키는 회전축(140)를 포함하여 이루어진다.In the semiconductor manufacturing process, the centering measuring device 100 of the semiconductor device of the present invention for checking the rotation center of the glass wafer which is rotated by seating on the chuck to check the rotation center of the wafer to be rotated and the rotation center of the chuck is shown in FIG. As in a), one end is formed into a concave surface 114 as a contact surface in contact with the side of the glass wafer, and the opposite end is attached to the measuring column 113 inscribed on the scale, the spring on the side of the measuring column (112) is fitted, respectively, so that the end of the wafer guide 110 attached to the guide shaft 111, which is formed with a screw, and when the wafer guide is moved so that the scale can be measured on the measuring line that intersects the scale of the measuring column. In order to form a groove 121 into which the measuring column is inserted, a body 120 having a through hole 122 corresponding to the guide shaft of the wafer guide and a wafer are formed around the groove. After inserting the measuring column of the rod into the groove of the body, and inserting the spring guide into the through hole so that the spring can be compressed to the position where the guideline of the wafer guide is formed in the measuring column on the measuring line where the groove is the edge. In order to fix this, it comprises a nut 130 coupled to the screw formed at the end of the guide shaft, and a rotating shaft 140 for rotating and fixing the body coupled to the wafer guide.
즉, 본 고안에 의한 반도체 장치의 센터링 측정기구(100)에서 웨이퍼가이드(110)는 측면접촉하는 글라스웨이퍼의 회전변화에 따라 스프링(112)이 동작되어 왕복이동하게 되며,, 이로 인하여 웨이퍼가이드의 측정눈금(113)도 몸체(120)의 홈(121)에 왕복이동하게 되고, 측정눈금의 원점(zero point)을 몸체의 홈의 측정선에 일치시키는 측정눈금의 셋팅(setting)은 웨이퍼가이드(110)와 몸체(120)의 간격을 이를 몸체의 관통홀(122)을 통하여 결합시키는 가이드축(111)의 너트(130)로 조정하여 측정눈금을 셋팅시킨다.That is, in the centering measuring device 100 of the semiconductor device according to the present invention, the wafer guide 110 is reciprocated by the operation of the spring 112 according to the rotational change of the glass wafer in side contact, and thus the wafer guide 110 The measurement scale 113 is also reciprocated in the groove 121 of the body 120, the setting of the measurement scale that matches the zero point of the measurement scale with the measurement line of the groove of the body is a wafer guide ( The distance between the 110 and the body 120 is adjusted by the nut 130 of the guide shaft 111 that couples the through-hole 122 of the body to set the measurement scale.
그리고, 본 고안에 의한 반도체 장치의 센터링 측정기구를 제 1 도의 (b)와 같이 모터의 회전력을 전달하는 스핀들(11)과, 스핀들의 상단에 수평으로 부착되고, 그 상면의 중심에는 진공관(12)이 형성되어 웨이퍼가 상면에 진공관의 흡입력에 의해서 고정되어 압착되어 척(13)으로 이루어진 웨이퍼 스핀장치의 일측에 설치시킬 때에 그 동작은 다음과 같다.Then, the centering measuring mechanism of the semiconductor device according to the present invention is attached to the spindle 11 for transmitting the rotational force of the motor horizontally to the upper end of the spindle, as shown in Fig. 1 (b), and the vacuum tube 12 at the center of the upper surface thereof. Is formed so that the wafer is fixed to the upper surface by suction force of the vacuum tube and pressed, and is mounted on one side of the wafer spin device made of the chuck 13. The operation is as follows.
즉, 반도체 장치의 웨이퍼 스핀장치를 이용하여 웨이퍼를 회전시킬 때에 웨이퍼와 척의 회전중심이 일치되지 않아 웨이퍼가 오차를 두고 회전하게 될 경우에는 작업자가 글라스웨이퍼(10)를 웨이퍼 스핀장치의 척 상면에 안착시킨 후에, 본 고안의 센터링 측정기구(100)의 회전축(140)을 회전시켜서, 글라스웨이퍼의 측면에 웨이퍼가이드(110)의 오목면(114)으로 형성시킨 접촉면에 접촉시킨다. 이때, 본 고안의 센터링 측정기구의 몸체(120)의 홈(121)에 삽입되는 웨이퍼가이드의 측정기둥(113)은 그 눈금의 원점이 몸체의 홈 입구의 측정선에 일치되어 있다.That is, when the wafer is rotated using the wafer spin device of the semiconductor device and the wafer and the chuck do not coincide with each other and the wafer rotates with an error, the operator moves the glass wafer 10 to the upper surface of the chuck of the wafer spin device. After seating, the rotating shaft 140 of the centering measuring device 100 of the present invention is rotated to contact the contact surface formed by the concave surface 114 of the wafer guide 110 on the side of the glass wafer. At this time, the measuring column 113 of the wafer guide inserted into the groove 121 of the body 120 of the centering measuring mechanism of the present invention is coincident with the measuring line of the groove inlet of the body.
이어서, 글라스웨이퍼(10)를 천천히 회전시키면, 그 회전상태에 따라 글라스웨이퍼의 측면과 접촉하게 되는 본 센터링 측정기구(100)의 웨이퍼가이드(110)가 수평 왕복이동을 하게 되고, 이에 따라 웨이퍼가이드의 측정기둥(113)도 왕복이동하게 됨으로, 작업자는 몸체(120)의 홈(121)에 삽입되어 왕복이동하게 되는 측정기둥의 초기값(원점)에서의 변화량을 판독하여 글라스웨이퍼가 웨이퍼 스핀장치의 척 상면에서 각각의 회전중심점의 일치여부를 확인할 수 있다.Subsequently, when the glass wafer 10 is slowly rotated, the wafer guide 110 of the centering measuring device 100 which comes into contact with the side surface of the glass wafer according to the rotational state of the glass wafer 10 moves horizontally. Since the measuring column 113 is also reciprocated, the operator reads the amount of change in the initial value (origin) of the measuring column which is inserted into the groove 121 of the body 120 and is reciprocated so that the glass wafer is a wafer spin device. It is possible to check whether each center of rotation coincides on the upper surface of the chuck.
본 고안에 의한 반도체 장치의 센터링 측정기구에서는 글라스웨이퍼와 척의 회전중심의 일치여부를 육안으로 판단하여 오차가 발생되는 종래의 기술에 비하여, 글라스웨이퍼와 척의 회전중심의 일치여부를 측정기둥의 눈금 변화량으로 판단함으로써 발생되는 오차의 폭을 감소시킬 수 있다.In the centering measuring mechanism of the semiconductor device according to the present invention, the amount of change in the scale of the measuring pillar is equal to the rotational center of the glass wafer and the chuck, compared to the conventional technique in which an error occurs by visually determining whether the rotation center of the glass wafer and the chuck is matched with the naked eye. By determining this, the width of the error generated can be reduced.
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