KR0119372B1 - Phase inversion mask - Google Patents
Phase inversion maskInfo
- Publication number
- KR0119372B1 KR0119372B1 KR1019930026880A KR930026880A KR0119372B1 KR 0119372 B1 KR0119372 B1 KR 0119372B1 KR 1019930026880 A KR1019930026880 A KR 1019930026880A KR 930026880 A KR930026880 A KR 930026880A KR 0119372 B1 KR0119372 B1 KR 0119372B1
- Authority
- KR
- South Korea
- Prior art keywords
- pattern
- light
- phase inversion
- halftone
- material layer
- Prior art date
Links
- 239000000463 material Substances 0.000 claims abstract description 22
- 230000000903 blocking effect Effects 0.000 claims abstract description 12
- 239000010453 quartz Substances 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 150000001875 compounds Chemical class 0.000 claims abstract description 4
- 238000002834 transmittance Methods 0.000 claims description 7
- 230000010363 phase shift Effects 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 3
- 239000011651 chromium Substances 0.000 abstract description 24
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 22
- 229910052804 chromium Inorganic materials 0.000 abstract description 20
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 230000007547 defect Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 5
- 229920003259 poly(silylenemethylene) Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
본 발명은 위상반전마스크에 관한 것으로, 고해상력을 요하는 고집적소자 제조하기 위하여 파장이 짧은 Duv 또는 Vuv선을 사용할 수 있는 하프톤형 PSM에서 Sio2+Cr2O3화합물을 차단물질층으로 사용하여 석영기판의 상부에 패턴을 형성함으로써, 패턴형성시 해상력을 높이고 크롬막의 두께로 인한 결함발생을 억제할 수 있다.The present invention relates to a phase inversion mask, using a Sio 2 + Cr 2 O 3 compound as a blocking material layer in a halftone PSM that can use a short wavelength Duv or Vuv line to manufacture a highly integrated device requiring high resolution By forming a pattern on the top of the quartz substrate, it is possible to increase the resolution in forming the pattern and to suppress the occurrence of defects due to the thickness of the chromium film.
Description
제1a도 내지 제1c도는 종래 기술의 실시예에 의한 하프톤형 위상반전마스크 및 그 제조공정을 도시한 단면도.1A to 1C are cross-sectional views showing a halftone phase shift mask and a manufacturing process thereof according to an embodiment of the prior art.
제2a도 및 제2b도는 본 발명의 일 실시예에 의한 하프톤형 위상반전마스크 및 그 제조공정을 도시한 단면도.2A and 2B are cross-sectional views showing a halftone phase shift mask and a manufacturing process thereof according to an embodiment of the present invention.
제2c도는 본 발명의 다른 실시예에 의한 하프톤형 위상반전마스크의 단면도.2C is a cross-sectional view of a halftone phase shift mask according to another embodiment of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 석영기판 3 : 크롬막1: quartz substrate 3: chromium film
5 : 크롬패턴 6 : 차광지역5: Chrome pattern 6: Shading area
7 : 비차광지역 8,13 : 위상반전층패턴7: non-shielding area 8,13: phase inversion layer pattern
9 : 차광물질층 11 : 차광물질층패턴9: shading material layer 11: shading material layer pattern
본 발명은 위상반전마스크(PSM:Phase Shift Mask, 이하에서 PSM이라 함)에 관한 것으로, 특히 소자가 고집적화됨에 따라 소자의 해상도를 증가시키는 하프톤(half-tone)형 PSM을 제조하는 기술이다. 종래에는 일반적으로 다수의 크롬패턴이 형성된 마스크를 사용하여 리소그래피 공정을 실시하였다. 그러나, 이러한 크롬패턴이 형성된 마스크를 사용할 경우, 투과하는 광은 인접패턴 안에 서로 동위상이기 때문에 패턴 경계부에서 패턴이 정확하게 분리되지 못하여 감광막현상의 디파인(define) 상태불량을 말하는 브릿지(bridge)가 발생된다. 이러한 문제점을 해결하기 위하여 PSM를 사용하게 되었다. 상기PSM은 투과하는 빛의 상호작용을 이용하여 비노광지역의 중심부근에서 빛의 회절 및 간섭이 최소로 줄어들어 투과하는 영역에서 광 콘트라스를 상대적으로 증가시켜 해상력을 증가시키고, 공정마진을 개선한다. 한편, PSM은 마스크의 구조형상에 따라 레벤슨형, 림형(rim-type), 보조패턴 부착형 및 하프톤형 PSM등으로 분류된다. 본 발명에서 사용되는 하프톤 PSM은 상기 림형과 함께 임의의 패턴에 적용할 수 있다. 상기 림형 PSM은 마스크 제작방법에 따라 위상반전패턴을 위한 추가의 마스크패턴을 제작하는 공정을 필요로 하며 일반적인 노광마스크보다 더 복잡하다. 그러나 하프톤 PSM은 마스크상에서 차광물질인 크롬과 위상반전층의 모양, 위치가 동일하므로 추가적인 마스크 레이아웃이 필요없어 기존의 소자제작을 위한 디자인을 그대로 적용할 수 있다. 또한, 마스크의 제조공정에서도 크롬층과 위상반전층간의 정렬이 필요없이 다른 형의 PSM에 비해 상당히 간단하다. 상기 크롬은 종래에 패턴을 형성할 때는 비교적 파장이 짧은 가시광선 영역의 G선 또는 I선 노광시에는 사용 가능하지만, 256M DRAM급의 고집적소자에서 요구하는 고해상력을 갖추기 위하여는 파장이 짧은 DUV 및 VUV 영역에서 사용하여야 하는데, 노광시 크롬에 의한 에너지흡수가 매우 크기 때문에 크롬의 두께를 얇게 형성하여야 한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a phase shift mask (PSM), and more particularly to a half-tone PSM that increases the resolution of a device as the device is highly integrated. Conventionally, a lithography process is performed using a mask in which a plurality of chromium patterns are formed. However, when using a mask formed with such a chromium pattern, the transmitted light is in-phase with each other in the adjacent pattern, so that the pattern cannot be accurately separated at the pattern boundary, resulting in a bridge indicating a poor state of the photoresist. do. PSM has been used to solve this problem. The PSM minimizes the diffraction and interference of light in the central region of the non-exposed area by using the interaction of transmitted light, thereby increasing the light contrast in the transmitted area to increase the resolution and improve the process margin. On the other hand, the PSM is classified into a Levenson type, a rim type, an auxiliary pattern attachment type, and a halftone type PSM according to the structure of the mask. The halftone PSM used in the present invention can be applied to any pattern with the rim type. The rim type PSM requires a process of manufacturing an additional mask pattern for a phase inversion pattern according to a mask fabrication method and is more complicated than a general exposure mask. However, since the halftone PSM has the same shape and position as the light blocking material chromium and the phase inversion layer on the mask, no additional mask layout is required, and thus the existing design for device fabrication can be applied as it is. In addition, the mask manufacturing process is considerably simpler than other types of PSMs without the need for the alignment between the chromium layer and the phase inversion layer. The chromium can be used for G- or I-ray exposure in a visible light region having a relatively short wavelength when forming a pattern in the related art. It should be used in the VUV area, and the thickness of chromium should be made thin because the energy absorption by chromium is very high during exposure.
종래 기술에 의한 하프톤형 PSM을 제1a도 내지 제1c도를 참고로 하여 설명하기로 한다. 제1a도는 석영기판(1)의 상부에 차광물지로 크롬(3)을 도포한 것을 도시한 단면도이다. 이때, 크롬(3)의 두께는 100-200Å으로 한다. 제1B도는 상기 크롬(3)을 이빔(E-beam)으로 크롬패턴(5)을 형성한 것을 도시한 단면도이다. 제1c도는 크롬패턴(5)의 상부에만 위상반전물질을 도포하여 위상반전층패턴(8)을 구비한 하프톤PSM을 형성하는 것을 도시한 단면도이다. 이때, 크롬마스크는 빛을 차단하는 차광막, 즉 크롬패턴(5)의 투과율이 1%이하이지만 하프톤형 PSM의 경우 5∼10%정도이다. 상기 하프톤 PSM의 경우 차광지역(6)과 비차광지역(7)을 투과하는 상호간의 간섭작용을 이용한다. 상기에서 위상반전물질은 에스오지(SOG:spin on glass, 이하에서 SOG)라 함)와 같이 투광성이 좋은 감광물질을 사용한다.A halftone PSM according to the prior art will be described with reference to FIGS. 1A to 1C. FIG. 1A is a cross-sectional view showing the coating of chromium 3 on a quartz substrate 1 with a light shielding paper. At this time, the thickness of the chromium 3 shall be 100-200 kPa. FIG. 1B is a cross-sectional view illustrating the formation of the chrome pattern 5 using the chromium 3 as an E-beam. FIG. 1C is a cross-sectional view of forming a halftone PSM having a phase inversion layer pattern 8 by applying a phase inversion material only on the chromium pattern 5. At this time, the chromium mask has a light transmittance of light blocking film that blocks light, that is, the chromium pattern 5 has a transmittance of 1% or less, but in the case of a halftone PSM, it is about 5-10%. In the case of the halftone PSM, interference between the light blocking area 6 and the non-light blocking area 7 is used. In the above, the phase inversion material uses a light-transmitting photosensitive material such as SG (SOG: spin on glass, SOG).
그러나. 상기와 같은 구조의 종래 하프톤형 PSM을 만드는 경우, 크롬패턴(5)의 두께를 얇고 균일하게 형성하기가 어려워 핀홀과 같은 결함이 발생하여 실질적으로 사용 불가능하게 된다. 따라서, 본 발명은 DUV 및 VUV용 하프톤형 PSM 제작시 새로운 차광물질을 개발 사용하여 차광막의 두께를 적당한 두께로 조절 가능하도록 함으로써, 차광 영역에서 광투과율을 자유롭게 조절가능하게 하고, 얇은 차광막의 두께에 기인하여 발생가능성을 제거하여 해상력은 높은 하프톤 PSM에 그 목적이 있다. 이상의 목적을 달성하기 위한 본 발명의 특징은, 노광된 빛의 일정량을 투과시키는 차단물질 패턴을 구비하는 하프톤형 PSM에 있어서, 석영기판의 상부에 예정된 노광지역을 오픈시키는 차광물질층패턴이 Sio2+Cr2O3화합물로 형성되어 있음에 있다.But. When the conventional halftone type PSM having the above structure is made, it is difficult to form the thickness of the chromium pattern 5 thinly and uniformly, so that defects such as pinholes occur and are substantially impossible to use. Accordingly, the present invention allows the thickness of the light shielding film to be adjusted to an appropriate thickness by developing and using a new light shielding material when manufacturing halftone PSMs for DUV and VUV, thereby freely adjusting the light transmittance in the light shielding region, Due to the elimination of the possibility to occur, the purpose of the high resolution halftone PSM. In order to achieve the above object, a characteristic of the present invention is a halftone PSM having a blocking material pattern for transmitting a predetermined amount of exposed light, wherein the light shielding material layer pattern for opening a predetermined exposure area on the quartz substrate is Sio 2. It is formed from the + Cr 2 O 3 compound.
이하, 첨부된 도면을 참고로 하여 본 발명을 설명하기로 한다.Hereinafter, with reference to the accompanying drawings will be described the present invention.
제2a도 및 제2b도는 본 발명의 일 실시예에 의한 하프톤 위상반전마스크를 도시한 단면도이다. 제2a도는 석영기판(1)의 상부에 새로운 차광물질층(9)을 증착한 것을 도시한 것을 도시한 단면도이다. 상기 차광물질층(9)은 자체적으로 광투과성을 가지는 Sio2+Cr2O3화합물을 사용한다. 그리고, 차광물질층(9)은 실리콘 및 크롬(Cr) 타겟(target)에 운반가스인 산소가스를 이용하여 스퍼터링(spattering)하여 형성하고, 이때 크롬의 혼합비는 15%이하가 되도록 한다. 상기 크롬의 혼합비가 높을 경우 종래 기술에서의 크롬막과 같이 Duv광 흡수율이 높아져 효과가 감소된다. 상기 차광물질층(9)이 Duv 하프톤 PSM 제작시 180°의 위상반전을 일으키는 최적 두께는 1000∼2000Å이며, 이때 차광지역(6)의 광투과율이 약 2∼5%가 된다. 한편, 스퍼터링의 공정조건은 전력(power) 9kw, 압력 9mTorr 및 온도 100∼200℃에서 실시한다. 제2B도는 상기 차광물질층(9)을 패턴닝은 통상의 감광막패턴을 마스크로 하여 CF3+CF4등의 플로린계 플라즈마를 이용하여 식각하여 차광물질층패턴(11)을 형성한 것을 도시한 단면도이다. 또한 상기 차광물질층패턴(11)에 의한 위상반전 효과가 완전하지 못한 경우, 제2c도와 같이 상기 차광물질층패턴(11)의 상부에 SOG등의 위상반전 물질층패턴(13)을 위상반전이 효과적으로 일어날 수 있는 두께만큼 형성할 수도 있다. 상기한 본 발명에 의하면, 일반 노광마스크보다 빛의 강도가 낮아지며 패턴의 중앙부분에서 180°위상의 빛에 의한 회절의 영향으로 전체적인 강도가 낮아지나 패턴의 콘트라스트. 촛점심도 및 해상력이 좋아진다.2A and 2B are cross-sectional views illustrating a halftone phase shift mask according to an embodiment of the present invention. FIG. 2A is a cross-sectional view showing the deposition of a new light blocking material layer 9 on the quartz substrate 1. The light shielding material layer 9 uses a Sio 2 + Cr 2 O 3 compound which has light transmittance per se. In addition, the light blocking material layer 9 is formed by sputtering using oxygen gas, which is a carrier gas, in a silicon and chromium (Cr) target, and the mixing ratio of chromium is 15% or less. When the mixing ratio of chromium is high, the effect of the Duv light absorption is increased, as in the chromium film of the related art. The thickness of the light-shielding material layer 9 that causes phase reversal of 180 ° when manufacturing the Duv halftone PSM is 1000 to 2000 mW, and the light transmittance of the light shielding area 6 is about 2 to 5%. On the other hand, the sputtering process conditions are performed at power 9kw, pressure 9mTorr and temperature 100 ~ 200 ℃. FIG. 2B shows that the light shielding material layer 9 is patterned to form a light shielding material layer pattern 11 by using a florin-based plasma such as CF 3 + CF 4 as a mask. It is a cross section. In addition, when the phase inversion effect by the light blocking material layer pattern 11 is not complete, the phase inversion of the phase inversion material layer pattern 13 such as SOG on the top of the light blocking material layer pattern 11 as shown in FIG. 2C. It may be formed to a thickness that can effectively occur. According to the present invention described above, the intensity of light is lower than that of a general exposure mask, and the overall intensity is lowered due to the influence of diffraction by light of 180 ° phase at the center portion of the pattern, but the contrast of the pattern. Depth of focus and resolution are improved.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930026880A KR0119372B1 (en) | 1993-12-08 | 1993-12-08 | Phase inversion mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930026880A KR0119372B1 (en) | 1993-12-08 | 1993-12-08 | Phase inversion mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR950021026A KR950021026A (en) | 1995-07-26 |
| KR0119372B1 true KR0119372B1 (en) | 1997-09-30 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019930026880A KR0119372B1 (en) | 1993-12-08 | 1993-12-08 | Phase inversion mask |
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| Country | Link |
|---|---|
| KR (1) | KR0119372B1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100458085B1 (en) * | 1997-06-30 | 2005-02-23 | 주식회사 하이닉스반도체 | Method for fabricating semiconductor device to reduce leakage current and improve electron migration characteristic and stress migration characteristic |
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1993
- 1993-12-08 KR KR1019930026880A patent/KR0119372B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR950021026A (en) | 1995-07-26 |
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