JPWO2023157514A1 - - Google Patents
Info
- Publication number
- JPWO2023157514A1 JPWO2023157514A1 JP2024501019A JP2024501019A JPWO2023157514A1 JP WO2023157514 A1 JPWO2023157514 A1 JP WO2023157514A1 JP 2024501019 A JP2024501019 A JP 2024501019A JP 2024501019 A JP2024501019 A JP 2024501019A JP WO2023157514 A1 JPWO2023157514 A1 JP WO2023157514A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022022939 | 2022-02-17 | ||
| PCT/JP2023/000641 WO2023157514A1 (ja) | 2022-02-17 | 2023-01-12 | 炭化珪素基板、炭化珪素基板の製造方法および炭化珪素基板の製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023157514A1 true JPWO2023157514A1 (ja) | 2023-08-24 |
| JPWO2023157514A5 JPWO2023157514A5 (ja) | 2024-10-23 |
Family
ID=87578085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024501019A Pending JPWO2023157514A1 (ja) | 2022-02-17 | 2023-01-12 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2023157514A1 (ja) |
| WO (1) | WO2023157514A1 (ja) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008063124B4 (de) * | 2008-12-24 | 2013-05-16 | Sicrystal Ag | Herstellungsverfahren für einen gleichmäßig dotierten SiC-Volumeneinkristall und gleichmäßig dotiertes SiC-Substrat |
| EP2411569B1 (en) * | 2009-03-26 | 2021-09-22 | II-VI Incorporated | Sic single crystal sublimation growth method and apparatus |
| JP6226959B2 (ja) * | 2012-04-20 | 2017-11-08 | トゥー‐シックス・インコーポレイテッド | 大口径高品質ＳｉＣ単結晶、方法、及び装置 |
| US9090989B2 (en) * | 2012-05-24 | 2015-07-28 | Ii-Vi Incorporated | Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof |
| US9322110B2 (en) * | 2013-02-21 | 2016-04-26 | Ii-Vi Incorporated | Vanadium doped SiC single crystals and method thereof |
-
2023
- 2023-01-12 JP JP2024501019A patent/JPWO2023157514A1/ja active Pending
- 2023-01-12 WO PCT/JP2023/000641 patent/WO2023157514A1/ja unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023157514A1 (ja) | 2023-08-24 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240718 |