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JPWO2022172875A1 - - Google Patents

Info

Publication number
JPWO2022172875A1
JPWO2022172875A1 JP2022580608A JP2022580608A JPWO2022172875A1 JP WO2022172875 A1 JPWO2022172875 A1 JP WO2022172875A1 JP 2022580608 A JP2022580608 A JP 2022580608A JP 2022580608 A JP2022580608 A JP 2022580608A JP WO2022172875 A1 JPWO2022172875 A1 JP WO2022172875A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022580608A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022172875A1 publication Critical patent/JPWO2022172875A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N35/00—Magnetostrictive devices
    • H10N35/80—Constructional details
    • H10N35/85—Magnetostrictive active materials
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/002—Ferrous alloys, e.g. steel alloys containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/12—Measuring force or stress, in general by measuring variations in the magnetic properties of materials resulting from the application of stress
    • G01L1/125—Measuring force or stress, in general by measuring variations in the magnetic properties of materials resulting from the application of stress by using magnetostrictive means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N35/00—Magnetostrictive devices
    • H10N35/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N35/00—Magnetostrictive devices
    • H10N35/101—Magnetostrictive devices with mechanical input and electrical output, e.g. generators, sensors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
    • H02N2/18—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing electrical output from mechanical input, e.g. generators
    • H02N2/186—Vibration harvesters

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
JP2022580608A 2021-02-09 2022-02-04 Pending JPWO2022172875A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021019132 2021-02-09
PCT/JP2022/004486 WO2022172875A1 (ja) 2021-02-09 2022-02-04 磁歪部材及び磁歪部材の製造方法

Publications (1)

Publication Number Publication Date
JPWO2022172875A1 true JPWO2022172875A1 (ja) 2022-08-18

Family

ID=82837809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022580608A Pending JPWO2022172875A1 (ja) 2021-02-09 2022-02-04

Country Status (6)

Country Link
US (1) US20240130241A1 (ja)
EP (1) EP4293145A1 (ja)
JP (1) JPWO2022172875A1 (ja)
KR (1) KR20230144014A (ja)
CN (1) CN116888312A (ja)
WO (1) WO2022172875A1 (ja)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04108699A (ja) 1990-08-28 1992-04-09 Mitsumi Electric Co Ltd Ｆｅ―Ｓｉ―Ａｌ系合金単結晶の育成装置
CN102986129B (zh) 2010-06-18 2016-01-20 国立大学法人金泽大学 发电元件及具备发电元件的发电装置
CA2904459A1 (en) 2012-03-13 2013-09-19 Etrema Products, Inc. Single crystalline microstructures and methods and devices related thereto
JP6606638B2 (ja) 2014-07-14 2019-11-20 株式会社福田結晶技術研究所 Ｆｅ−Ｇａ基合金単結晶の育成方法及び育成装置
JP6122882B2 (ja) 2015-01-29 2017-04-26 日本高周波鋼業株式会社 磁歪部材およびその製造方法
JP7394332B2 (ja) * 2019-03-26 2023-12-08 住友金属鉱山株式会社 鉄ガリウム合金の単結晶インゴットの育成方法およびその加工方法、鉄ガリウム合金の単結晶インゴット
JP2021019132A (ja) 2019-07-22 2021-02-15 トヨタ自動車株式会社 回路基板の取り外し方法

Also Published As

Publication number Publication date
KR20230144014A (ko) 2023-10-13
WO2022172875A1 (ja) 2022-08-18
EP4293145A1 (en) 2023-12-20
CN116888312A (zh) 2023-10-13
US20240130241A1 (en) 2024-04-18

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