JPWO2022046643A5 - - Google Patents
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- JPWO2022046643A5 JPWO2022046643A5 JP2023512285A JP2023512285A JPWO2022046643A5 JP WO2022046643 A5 JPWO2022046643 A5 JP WO2022046643A5 JP 2023512285 A JP2023512285 A JP 2023512285A JP 2023512285 A JP2023512285 A JP 2023512285A JP WO2022046643 A5 JPWO2022046643 A5 JP WO2022046643A5
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- 229910052782 aluminium Inorganic materials 0.000 claims description 36
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 27
- 238000002048 anodisation reaction Methods 0.000 claims description 12
- 239000011156 metal matrix composite Substances 0.000 claims description 10
- 229910000962 AlSiC Inorganic materials 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000007743 anodising Methods 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Description
本開示は、いくつかの好ましい実施形態の視点から説明されたが、本開示の範囲に該当する変更、置き換え、修正、および様々な代替同等物がある。本開示の方法および装置を実施する多くの別の方法があることにも注意されたい。よって、以下に添付の特許請求の範囲は、本開示の真の精神および範囲に該当する、全てのかかる変更、置き換え、および様々な代替同等物を含むと解釈されることが意図される。本開示は、以下の形態により実現されてもよい。
［形態１］
半導体処理チャンバの構成部品であって、
金属基複合材を含む本体と、
前記本体上の陽極酸化層と、
を含む、構成部品。
［形態２］
形態１に記載の構成部品であって、
前記金属基複合材は、ＡｌＳｉＣを含む、構成部品。
［形態３］
形態１に記載の構成部品であって、さらに、
前記本体と前記陽極酸化層との間にアルミニウム層を含む、構成部品。
［形態４］
形態３に記載の構成部品であって、
前記アルミニウム層は、少なくとも９９質量％の純アルミニウムである、構成部品。
［形態５］
形態３に記載の構成部品であって、
前記アルミニウム層は、少なくとも９９．５質量％の純アルミニウムである、構成部品。
［形態６］
形態３に記載の構成部品であって、
前記アルミニウム層は、少なくとも９９．９質量％の純アルミニウムである、構成部品。
［形態７］
形態２に記載の構成部品であって、
前記ＡｌＳｉＣは、３０～７５容量％のシリコンカーバイドを含む、構成部品。
［形態８］
形態１に記載の構成部品であって、
前記陽極酸化層は、前記本体の底面に形成される、構成部品。
［形態９］
形態１に記載の構成部品であって、
前記陽極酸化層は、純度が少なくとも９９質量％の酸化アルミニウムを有するアルミニウム酸化層である、構成部品。
［形態１０］
形態１に記載の構成部品であって、
前記陽極酸化層は、０．１～０．５容量％の多孔率を有する、構成部品。
［形態１１］
形態１に記載の構成部品であって、
前記陽極酸化層は、１０～５０ミクロンの厚さを有する、構成部品。
［形態１２］
形態１０に記載の構成部品であって、
前記陽極酸化層は、５０ミクロン未満の厚さを有する、構成部品。
［形態１３］
形態１０に記載の構成部品であって、
前記陽極酸化層は、１０ミクロン未満の厚さを有する、構成部品。
［形態１４］
形態１に記載の構成部品であって、
前記構成部品はベースプレートであり、複数の内部ガス経路をさらに備え、各内部ガス経路は、陽極酸化層を含む表面を有し、前記ベースプレートの下側に出口を有する、構成部品。
［形態１５］
金属基複合材を含む本体の陽極酸化層を形成する方法であって、
前記金属基複合材を含む前記本体を提供する工程と、
前記本体の表面にアルミニウム層をめっきする工程であって、前記アルミニウムは、少なくとも９９質量％の純アルミニウムである、工程と、
前記アルミニウム層を陽極酸化して陽極酸化層を形成する工程と、
を含む、方法。
［形態１６］
形態１５に記載の方法であって、
前記金属基複合材は、ＡｌＳｉＣを含む、方法。
［形態１７］
形態１５に記載の方法であって、
前記アルミニウム層における前記アルミニウムは、少なくとも９９．５質量％の純アルミニウムである、方法。
［形態１８］
形態１５に記載の方法であって、
前記アルミニウム層における前記アルミニウムは、少なくとも９９．９質量％の純アルミニウムである、方法。
［形態１９］
形態１５に記載の方法であって、
前記アルミニウム層の厚さは、陽極酸化後の前記陽極酸化層の厚さの少なくとも１／３である、方法。
［形態２０］
形態１５に記載の方法であって、
前記本体の前記表面は、内部流路への少なくとも１つの開口部を備え、前記陽極酸化層は、前記内部流路の内部の表面に形成される、方法。
［形態２１］
半導体処理チャンバの構成部品であって、
形態１５に記載の方法で形成される、構成部品。
［形態２２］
形態２１に記載の構成部品であって、
前記構成部品はベースプレートであり、複数の内部ガス経路をさらに備え、各内部ガス経路は、陽極酸化層を含む表面を有し、前記ベースプレートの下側に出口を有する、構成部品。
Although the present disclosure has been described in terms of several preferred embodiments, there are changes, substitutions, modifications, and various substitute equivalents that fall within the scope of the present disclosure. It should also be noted that there are many alternative ways of implementing the methods and apparatuses of the present disclosure. Therefore, it is intended that the following appended claims be construed to include all such changes, substitutions, and various substitute equivalents that fall within the true spirit and scope of the present disclosure. The present disclosure may be realized in the following forms:
[Form 1]
1. A component of a semiconductor processing chamber, comprising:
a body including a metal matrix composite;
an anodized layer on the body;
Including, components.
[Form 2]
2. The component according to claim 1,
The component, wherein the metal matrix composite comprises AlSiC.
[Form 3]
The component according to aspect 1, further comprising:
The component includes an aluminum layer between the body and the anodized layer.
[Form 4]
4. The component according to claim 3,
The component, wherein the aluminum layer is at least 99% by weight pure aluminum.
[Form 5]
4. The component according to claim 3,
The component, wherein the aluminum layer is at least 99.5% by weight pure aluminum.
[Form 6]
4. The component according to claim 3,
The component, wherein the aluminum layer is at least 99.9% by weight pure aluminum.
[Form 7]
3. The component according to claim 2,
The component, wherein the AlSiC comprises 30-75 volume percent silicon carbide.
[Form 8]
2. The component according to claim 1,
The anodized layer is formed on a bottom surface of the body.
[Mode 9]
2. The component according to claim 1,
The component, wherein the anodization layer is an aluminum oxide layer having an aluminum oxide purity of at least 99% by weight.
[Form 10]
2. The component according to claim 1,
The anodized layer has a porosity of 0.1 to 0.5 volume percent.
[Form 11]
2. The component according to claim 1,
The component, wherein the anodization layer has a thickness of 10 to 50 microns.
[Form 12]
11. The component according to claim 10,
The component, wherein the anodization layer has a thickness of less than 50 microns.
[Form 13]
11. The component according to claim 10,
The anodization layer has a thickness of less than 10 microns.
[Form 14]
2. The component according to claim 1,
The component is a base plate, further comprising a plurality of internal gas passages, each internal gas passage having a surface including an anodized layer and having an outlet on an underside of the base plate.
[Form 15]
1. A method for forming an anodized layer on a body comprising a metal matrix composite, comprising the steps of:
providing the body comprising the metal matrix composite;
plating an aluminum layer on a surface of the body, the aluminum being at least 99% pure aluminum by weight;
anodizing the aluminum layer to form an anodized layer;
A method comprising:
[Form 16]
16. The method of claim 15, further comprising the steps of:
The method of claim 1, wherein the metal matrix composite comprises AlSiC.
[Form 17]
16. The method of claim 15, further comprising the steps of:
The method of claim 1, wherein the aluminum in the aluminum layer is at least 99.5% by weight pure aluminum.
[Form 18]
16. The method of claim 15, further comprising the steps of:
The method of claim 1, wherein the aluminum in the aluminum layer is at least 99.9% by weight pure aluminum.
[Form 19]
16. The method of claim 15, further comprising the steps of:
The method, wherein the thickness of the aluminum layer is at least ⅓ of the thickness of the anodized layer after anodization.
[Form 20]
16. The method of claim 15, further comprising the steps of:
The method of claim 1, wherein the surface of the body includes at least one opening to an interior passageway, and the anodization layer is formed on a surface within the interior passageway.
[Mode 21]
1. A component of a semiconductor processing chamber, comprising:
A component formed by the method of claim 15.
[Mode 22]
22. The component according to claim 21,
The component is a base plate, further comprising a plurality of internal gas passages, each internal gas passage having a surface including an anodized layer and having an outlet on an underside of the base plate.
Claims (20)
金属基複合材を含む本体と、
前記本体上の陽極酸化層と、
前記本体と前記陽極酸化層との間のアルミニウム層と、
を含み、
前記アルミニウム層は、少なくとも９９質量％の純アルミニウムである、構成部品。 1. A component of a semiconductor processing chamber, comprising:
a body including a metal matrix composite;
an anodized layer on the body;
an aluminum layer between the body and the anodized layer;
Including,
The component , wherein the aluminum layer is at least 99% by weight pure aluminum .
前記金属基複合材は、ＡｌＳｉＣを含む、構成部品。 Component according to claim 1,
The component, wherein the metal matrix composite comprises AlSiC.
前記アルミニウム層は、少なくとも９９．５質量％の純アルミニウムである、構成部品。 Component according to claim 1 ,
The component, wherein the aluminum layer is at least 99.5% by weight pure aluminum.
前記アルミニウム層は、少なくとも９９．９質量％の純アルミニウムである、構成部品。 Component according to claim 1 ,
The component, wherein the aluminum layer is at least 99.9% by weight pure aluminum.
前記ＡｌＳｉＣは、３０～７５容量％のシリコンカーバイドを含む、構成部品。 Component according to claim 2,
The component, wherein the AlSiC comprises 30-75 volume percent silicon carbide.
前記陽極酸化層は、前記本体の底面に形成される、構成部品。 Component according to claim 1,
The anodized layer is formed on a bottom surface of the body.
前記陽極酸化層は、純度が少なくとも９９質量％の酸化アルミニウムを有するアルミニウム酸化層である、構成部品。 Component according to claim 1,
The component, wherein the anodization layer is an aluminum oxide layer having an aluminum oxide purity of at least 99% by weight.
前記陽極酸化層は、０．１～０．５容量％の多孔率を有する、構成部品。 Component according to claim 1,
The anodized layer has a porosity of 0.1 to 0.5 volume percent.
前記陽極酸化層は、１０～５０ミクロンの厚さを有する、構成部品。 Component according to claim 1,
The component, wherein the anodization layer has a thickness of 10 to 50 microns.
前記陽極酸化層は、５０ミクロン未満の厚さを有する、構成部品。 9. A component according to claim 8 ,
The component, wherein the anodization layer has a thickness of less than 50 microns.
前記陽極酸化層は、１０ミクロン未満の厚さを有する、構成部品。 9. A component according to claim 8 ,
The anodization layer has a thickness of less than 10 microns.
前記構成部品はベースプレートであり、複数の内部ガス経路をさらに備え、各内部ガス経路は、陽極酸化層を含む表面を有し、前記ベースプレートの下側に出口を有する、構成部品。 Component according to claim 1,
The component is a base plate, further comprising a plurality of internal gas passages, each internal gas passage having a surface including an anodized layer and having an outlet on an underside of the base plate.
前記金属基複合材を含む前記本体を提供する工程と、
前記本体の表面にアルミニウム層をめっきする工程であって、前記アルミニウムは、少なくとも９９質量％の純アルミニウムである、工程と、
前記アルミニウム層を陽極酸化して陽極酸化層を形成する工程と、
を含む、方法。 1. A method for forming an anodized layer on a body comprising a metal matrix composite, comprising the steps of:
providing the body comprising the metal matrix composite;
plating an aluminum layer on a surface of the body, the aluminum being at least 99% pure aluminum by weight;
anodizing the aluminum layer to form an anodized layer;
A method comprising:
前記金属基複合材は、ＡｌＳｉＣを含む、方法。 14. The method of claim 13 ,
The method of claim 1, wherein the metal matrix composite comprises AlSiC.
前記アルミニウム層における前記アルミニウムは、少なくとも９９．５質量％の純アルミニウムである、方法。 14. The method of claim 13 ,
The method of claim 1, wherein the aluminum in the aluminum layer is at least 99.5% by weight pure aluminum.
前記アルミニウム層における前記アルミニウムは、少なくとも９９．９質量％の純アルミニウムである、方法。 14. The method of claim 13 ,
The method of claim 1, wherein the aluminum in the aluminum layer is at least 99.9% by weight pure aluminum.
前記アルミニウム層の厚さは、陽極酸化後の前記陽極酸化層の厚さの少なくとも１／３である、方法。 14. The method of claim 13 ,
The method, wherein the thickness of the aluminum layer is at least ⅓ of the thickness of the anodized layer after anodization.
前記本体の前記表面は、内部流路への少なくとも１つの開口部を備え、前記陽極酸化層は、前記内部流路の内部の表面に形成される、方法。 14. The method of claim 13 ,
The method of claim 1, wherein the surface of the body includes at least one opening to an interior passageway, and the anodization layer is formed on a surface within the interior passageway.
請求項１３に記載の方法で形成される、構成部品。 1. A component of a semiconductor processing chamber, comprising:
A component formed by the method of claim 13 .
前記構成部品はベースプレートであり、複数の内部ガス経路をさらに備え、各内部ガス経路は、陽極酸化層を含む表面を有し、前記ベースプレートの下側に出口を有する、構成部品。 20. The component of claim 19 ,
The component is a base plate, further comprising a plurality of internal gas passages, each internal gas passage having a surface including an anodized layer and having an outlet on an underside of the base plate.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202063070722P | 2020-08-26 | 2020-08-26 | |
| US63/070,722 | 2020-08-26 | ||
| PCT/US2021/047164 WO2022046643A1 (en) | 2020-08-26 | 2021-08-23 | Anodization for metal matrix composite semiconductor processing chamber components |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2023539146A JP2023539146A (en) | 2023-09-13 |
| JPWO2022046643A5 true JPWO2022046643A5 (en) | 2024-08-28 |
Family
ID=80353912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023512285A Pending JP2023539146A (en) | 2020-08-26 | 2021-08-23 | Anodic oxidation of metal matrix composite semiconductor processing chamber components |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20230343627A1 (en) |
| JP (1) | JP2023539146A (en) |
| KR (1) | KR20230056689A (en) |
| WO (1) | WO2022046643A1 (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3622353B2 (en) * | 1996-07-12 | 2005-02-23 | 東陶機器株式会社 | Electrostatic chuck stage and manufacturing method thereof |
| US6754062B2 (en) * | 2002-02-27 | 2004-06-22 | Praxair S.T. Technology, Inc. | Hybrid ceramic electrostatic clamp |
| JP4754469B2 (en) * | 2006-12-15 | 2011-08-24 | 東京エレクトロン株式会社 | Manufacturing method of substrate mounting table |
| US8128750B2 (en) * | 2007-03-29 | 2012-03-06 | Lam Research Corporation | Aluminum-plated components of semiconductor material processing apparatuses and methods of manufacturing the components |
| WO2016168311A1 (en) * | 2015-04-13 | 2016-10-20 | Materion Corporation | Anodized metal matrix composite |
-
2021
- 2021-08-23 US US18/011,103 patent/US20230343627A1/en active Pending
- 2021-08-23 WO PCT/US2021/047164 patent/WO2022046643A1/en active Application Filing
- 2021-08-23 KR KR1020237006719A patent/KR20230056689A/en active Search and Examination
- 2021-08-23 JP JP2023512285A patent/JP2023539146A/en active Pending
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