JPWO2021074981A1 - DC / DC converter device - Google Patents

Abstract

The DC / DC converter device (100) is a semiconductor module (50) in which first to fourth switching elements (Q1 to Q4) in which diodes (D1 to D4) are connected in antiparallel to each other are housed in one package (51). , The first and second smoothing capacitors (C1, C2), and the laminated conductor (40). The first to fourth terminals (11 to 14) of the semiconductor module (50) are provided side by side on the first surface of the package (51), and the first and second smoothing capacitors face the first surface. (C1, C2) are arranged. The laminated conductor (40) is formed by laminating a high-potential connecting conductor (41), an intermediate potential connecting conductor (42), and a low-potential connecting conductor (43), and is formed by laminating the first to fourth terminals (50) of the semiconductor module (50). 11-14) and the first and second smoothing capacitors (C1, C2) are connected.

Description

The present application relates to a DC / DC converter device.

The double chopper type DC / DC converter device has been proposed as a chopper circuit that can reduce the ripple current of the reactor without increasing the loss in the semiconductor switching element and can be configured compactly and inexpensively. , Used for voltage control of smoothing capacitors in uninterruptible power supplies.
A conventional double chopper type DC / DC converter device includes four transistors in which diodes are connected in antiparallel, two reactors, and two capacitors, respectively. Then, a semiconductor module in which two transistors are built in one package and three terminals are exposed is used (see, for example, Patent Document 1).

International release WO2017 / 056209

In the conventional DC / DC converter device, it is necessary to use two semiconductor modules, which is not suitable for reducing the installation area. In addition, it is difficult to reduce the surge voltage because the wiring inductance of the path of the circulating current flowing between each semiconductor module and the capacitor is different. Therefore, there is a problem that an adverse effect due to the surge voltage occurs and each part cannot be cooled effectively.

The present application discloses a technique for solving the above-mentioned problems, suppresses an adverse effect due to a surge voltage, effectively cools each part, has a small installation area, and promotes miniaturization. It is an object of the present invention to provide a DC / DC converter device having a different configuration.

The DC / DC converter device disclosed in the present application includes a first bridge circuit in which a first switching element in which diodes are connected in antiparallel connection and a second switching element are connected in series, and a first bridge circuit in which diodes are connected in antiparallel to each other. A semiconductor module containing a second bridge circuit in which a third switching element and a fourth switching element are connected in series in one package, first and second smoothing diodes, the semiconductor module and the first and second smoothing. It is provided with a laminated conductor for connecting to a diode. The semiconductor module has first to fourth terminals which are input / output terminals provided side by side on the first surface of the package, and fifth and fourth terminals which are input / output terminals provided side by side on the second surface of the package. A sixth terminal is provided, the first bridge circuit is connected between the first terminal and the second terminal, and the second bridge circuit is connected between the third terminal and the fourth terminal. The intermediate terminal of the first bridge circuit is connected to the fifth terminal, and the intermediate terminal of the second bridge circuit is connected to the sixth terminal. The first and second smoothing capacitors are arranged so as to face the first surface of the package. The laminated conductor includes a high-potential connecting conductor that connects the first terminal and the positive electrode of the first smoothing capacitor, and a low-potential connecting conductor that connects the fourth terminal and the negative electrode of the second smoothing capacitor. , The second terminal and the third terminal are laminated with an intermediate potential connecting conductor connecting the negative electrode of the first smoothing capacitor and the positive electrode of the second smoothing capacitor.

According to the DC / DC converter device disclosed in the present application, the difference in surge voltage due to each of the first and second bridge circuits can be suppressed with a small installation area. As a result, it is possible to provide a DC / DC converter device in which adverse effects due to surge voltage are suppressed, each part can be effectively cooled, and miniaturization is promoted.

It is a figure which shows the schematic circuit structure of the step-up chopper circuit as a DC / DC converter apparatus according to Embodiment 1. FIG. It is a figure which shows the schematic circuit structure of the step-down chopper circuit as a DC / DC converter apparatus according to Embodiment 1. FIG. It is a figure which shows the arrangement of the input / output terminal of the semiconductor module by Embodiment 1. FIG. It is a schematic top view of the DC / DC converter apparatus according to Embodiment 1. FIG. It is a schematic side view of the DC / DC converter apparatus according to Embodiment 1. FIG. It is a top view which shows a part of the double chopper unit by Embodiment 1. FIG. It is a top view which shows a part of the double chopper unit by Embodiment 1. FIG. It is a top view which shows a part of the double chopper unit by Embodiment 1. FIG. It is a circuit diagram which shows the path of the circulating current flowing through the DC / DC converter apparatus according to Embodiment 1. FIG. It is a figure which shows the path of the circulating current flowing through the double chopper unit by Embodiment 1. FIG. It is a figure which shows the surge voltage generated in the DC / DC converter apparatus by Embodiment 1. FIG. It is a figure which shows the schematic circuit structure of the DC / DC converter apparatus by the comparative example. It is a schematic top view of the DC / DC converter apparatus by the comparative example. It is a schematic side view of the DC / DC converter apparatus by the comparative example. It is a figure which shows the path of the circulating current by the comparative example. It is a figure which shows the arrangement of the input / output terminal of the semiconductor module by another example of Embodiment 1. FIG. It is a schematic top view of the DC / DC converter apparatus according to another example of Embodiment 1. FIG. It is a schematic side view of the DC / DC converter apparatus by another example of Embodiment 1. FIG. It is a top view which shows a part of the double chopper unit by another example of Embodiment 1. FIG. It is a top view which shows a part of the double chopper unit by another example of Embodiment 1. FIG. It is a top view which shows a part of the double chopper unit by another example of Embodiment 1. FIG. It is a schematic top view of the DC / DC converter apparatus according to Embodiment 2. FIG. It is a schematic side view of the DC / DC converter apparatus according to Embodiment 2. FIG. It is a top view which shows a part of the double chopper unit by Embodiment 2. FIG. It is a top view which shows a part of the double chopper unit by Embodiment 2. FIG. It is a schematic top view of the DC / DC converter apparatus according to another example of Embodiment 2. It is a schematic side view of the DC / DC converter apparatus by another example of Embodiment 2. FIG. It is a top view which shows a part of the double chopper unit by another example of Embodiment 2. It is a top view which shows a part of the double chopper unit by another example of Embodiment 2. It is a figure which shows the schematic circuit structure of the step-up chopper circuit as a DC / DC converter apparatus according to Embodiment 3. FIG. FIG. 3 is a schematic top view of the DC / DC converter device according to the third embodiment. It is a schematic side view of the DC / DC converter apparatus according to Embodiment 3. FIG. It is a top view which shows a part of the double chopper unit by Embodiment 3. FIG. It is a top view which shows a part of the double chopper unit by Embodiment 3. FIG. It is a top view which shows a part of the double chopper unit by Embodiment 3. FIG.

Embodiment 1.
FIG. 1 is a diagram showing a schematic circuit configuration of a step-up chopper circuit as a DC / DC converter device according to the first embodiment.
As shown in FIG. 1, the DC / DC converter device 100 includes a chopper having a first bridge circuit 1, a first smoothing capacitor C1, and a first reactor 21, a second bridge circuit 2, a second smoothing capacitor C2, and a first. It is a double chopper type step-up chopper circuit provided with a chopper having two reactors 22 between the input DC power supply 3 and the load 4.

The first bridge circuit 1 is composed of a first switching element Q1 and a second switching element Q2 in which diodes D1 and D2 are connected in antiparallel, respectively, and the second bridge circuit 2 has diodes D3 and D4, respectively. The third switching element Q3 and the fourth switching element Q4 connected in antiparallel are connected in series.
As the first to fourth switching elements Q1 to Q4, for example, an IGBT (Insulated Gate Bipolar Transistor) or a MOSFET (metric-axis-semiconductor transistor) or the like is used. Further, Si (silicon), SiC (silicon carbide) or the like is used as the material of the first to fourth switching elements Q1 to Q4 and the diodes D1 to D4.

Further, the first bridge circuit 1 and the second bridge circuit 2 are housed in the semiconductor module 50. That is, four switching elements Q1 to Q4 and four diodes D1 to D4 are housed in one package of the semiconductor module 50. The semiconductor module 50 is formed so that the first to sixth terminals 11 to 16 which are input / output terminals are exposed to the outside.

Inside the semiconductor module 50, the first bridge circuit 1 is connected between the first terminal 11 and the second terminal 12, and the second bridge circuit 2 is connected between the third terminal 13 and the fourth terminal 14. Ru. Further, the intermediate terminal (AC terminal) of the first bridge circuit 1 is connected to the fifth terminal 15, and the intermediate terminal (AC terminal) of the second bridge circuit 2 is connected to the sixth terminal 16.

On the outside of the semiconductor module 50, the first terminal 11 and the positive electrode 31 of the first smoothing capacitor C1 are connected, the second terminal 12 and the negative electrode 32 of the first smoothing capacitor C1 are connected, and the third terminal 13 and the second terminal 13 and the second are connected. The positive electrode 33 of the smoothing capacitor C2 is connected, and the fourth terminal 14 and the negative electrode 34 of the second smoothing capacitor C2 are connected. The negative electrode 32 of the first smoothing capacitor C1 and the positive electrode 33 of the second smoothing capacitor C2 are connected to each other, and the load 4 is connected between the positive electrode 31 of the first smoothing capacitor C1 and the negative electrode 34 of the second smoothing capacitor C2. Will be done.
Further, one end of the first reactor 21 is connected to the fifth terminal 15, and one end of the second reactor 22 is connected to the sixth terminal 16. The input DC power supply 3 is connected between the other end of the first reactor 21 and the other end of the second reactor 22.

That is, the first bridge circuit 1 is connected between both poles of the first smoothing capacitor C1, the second bridge circuit 2 is connected between both poles of the second smoothing capacitor C2, and the first smoothing capacitor C1 and the second smoothing capacitor C2 Are connected in series, and the series circuit is connected in parallel with the load 4. Further, the intermediate terminal of the first bridge circuit 1 is connected to the positive electrode of the input DC power supply 3 via the first reactor 21, and the intermediate terminal of the second bridge circuit 2 is connected to the input DC power supply 3 via the second reactor 21. It is connected to the negative electrode of.

Although the step-up chopper circuit is shown in FIG. 1, this embodiment can also be applied to the step-down chopper circuit.
FIG. 2 is a diagram showing a schematic circuit configuration of a step-down chopper circuit as a DC / DC converter device according to another example of the first embodiment. As shown in FIG. 2, in the DC / DC converter device 200, the input DC power supply 3 is connected between the positive electrode 31 of the first smoothing capacitor C1 and the negative electrode 34 of the second smoothing capacitor C2, and the DC / DC converter device 200 is connected to the first reactor 21. The load 4 is connected to the second reactor 22. Other configurations are the same as those of the DC / DC converter device 100 (boost chopper circuit) shown in FIG.

FIG. 3 is a diagram showing the arrangement of input / output terminals of the semiconductor module 50.
The first bridge circuit 1 and the second bridge circuit 2 are housed in one package 51 of the semiconductor module 50. The package 51 is generally a rectangular parallelepiped, and in FIG. 3, two side surfaces, a first surface and a second surface, are shown by a right side and a left side. The first surface and the second surface are not limited to the surface shown in the drawing.
As shown in FIG. 3, the first terminal 11, the second terminal 12, the third terminal 13, and the fourth terminal 14 are arranged side by side on the first surface of the package 51 in this order. Further, the fifth terminal 15 and the sixth terminal 16 are arranged side by side on the second surface of the package 51 in this order.
The first terminal 11, the second terminal 12, the third terminal 13, and the fourth terminal 14 are arranged at substantially equal intervals and are electrically isolated from each other. Both the fifth terminal 15 and the sixth terminal 16 are electrically insulated from each other.

FIG. 4 is a schematic top view of the DC / DC converter devices 100 and 200, and FIG. 5 is a schematic side view of the DC / DC converter devices 100 and 200 shown in FIG. 4 as viewed from the front.
As shown in FIGS. 4 and 5, the DC / DC converter devices 100 and 200 include a laminated conductor 40 connecting the semiconductor module 50 and the first and second smoothing capacitors C1 and C2. Then, a double chopper unit 60, which is a unit including a semiconductor module 50, first and second smoothing capacitors C1 and C2, and a laminated conductor 40, is configured.

In the double chopper unit 60, the first and second smoothing capacitors C1 and C2 are arranged on the right side and the semiconductor module 50 is arranged on the left side in the drawing. Cooling air from the blower parts (not shown) is sent to the left. That is, the semiconductor module 50 is arranged on the downstream side of the cooling air from the first and second smoothing capacitors C1 and C2. Further, the first and second smoothing capacitors C1 and C2 are arranged in the direction perpendicular to the direction of the cooling air.
The semiconductor module 50 is fixed on the cooler 70 with screws or the like.

As described above, the first terminal 11, the second terminal 12, the third terminal 13, and the fourth terminal 14 of the semiconductor module 50 are arranged side by side on the first surface of the package 51 in this order. Then, the first and second smoothing capacitors C1 and C2 are arranged so as to face the first surface of the package 51, and the positive electrode 31, the negative electrode 32 of the first smoothing capacitor C1 and the positive electrode 33 of the second smoothing capacitor C2 are arranged. The four terminals of the negative electrode 34 are arranged in this order so as to face the first surface of the package 51.

The laminated conductor 40 is configured by laminating a high-potential connecting conductor 41 made of a conductor plate, an intermediate potential connecting conductor 42, and a low-potential connecting conductor 43 via an insulating material 44. The three conductor plates constituting the high-potential connecting conductor 41, the intermediate-potential connecting conductor 42, and the low-potential connecting conductor 43 all have the same width and length except for the terminal portion 48 protruding for connecting to the semiconductor module 50. It is composed.
The high-potential connecting conductor 41 connects the first terminal 11 and the positive electrode 31 of the first smoothing capacitor C1. The intermediate potential connection conductor 42 connects the second terminal 12 and the third terminal 13 to the negative electrode 32 of the first smoothing capacitor C1 and the positive electrode 33 of the second smoothing capacitor C2. The low-potential connecting conductor 43 connects the fourth terminal 14 and the negative electrode 34 of the second smoothing capacitor C2.

As shown in FIG. 5, the low-potential connecting conductor 43, the intermediate potential connecting conductor 42, and the high-potential connecting conductor 41 are stacked in this order on the first and second smoothing capacitors C1 and C2 in the same region at equal intervals. By inserting an insulating material 44 having a width and length larger than that of the conductor plate of the connecting conductors 41 to 43 between the connecting conductors 41 to 43, a three-layer laminated conductor 40 is formed.
The laminated conductor 40 is connected to the first to fourth terminals 11 to 14 of the semiconductor module 50 by a conductive material such as a metal screw. Similarly, the laminated conductor 40 is connected to the positive electrode 31, the negative electrode 32 of the first smoothing capacitor C1, the positive electrode 33 of the second smoothing capacitor C2, and the four terminals of the negative electrode 34 by a conductive material such as a metal screw. The low-potential connecting conductor 43, the intermediate-potential connecting conductor 42, and the high-potential connecting conductor 41 of the laminated conductor 40 are provided with dodge holes 45, respectively, and are connected to other than the desired terminals of the first and second smoothing capacitors C1 and C2. Avoid connections.

Further, the fifth terminal 15 of the semiconductor module 50 provided on the second surface of the package 51 is connected to the conductor connected to the first reactor 21 by a conductor such as a metal screw. Similarly, the sixth terminal 16 of the semiconductor module 50 is connected to the conductor connected to the second reactor 22 by a conductor such as a metal screw.

6 to 8 are plan views showing a part of the double chopper unit 60, respectively. FIG. 6 shows how the semiconductor module 50 and the first smoothing capacitor C1 are connected by the high potential connecting conductor 41. FIG. 7 shows how the semiconductor module 50 and the first and second smoothing capacitors C1 and C2 are connected by the intermediate potential connecting conductor 42. FIG. 8 shows how the semiconductor module 50 and the second smoothing capacitor C2 are connected by the low potential connecting conductor 43.
As shown in FIG. 6, the high-potential connecting conductor 41 connects the first terminal 11 and the positive electrode 31 of the first smoothing capacitor C1, that is, the high-potential portion. The high-potential connection conductor 41 is provided with a dodge hole 45 that does not electrically contact the negative electrode 32 of the first smoothing capacitor C1 and the positive electrode 33 and the negative electrode 34 of the second smoothing capacitor C2 to insulate the conductor 41.

As shown in FIG. 7, the intermediate potential connection conductor 42 has a second terminal 12 and a third terminal 13 and a negative electrode 32 of the first smoothing capacitor C1 and a positive electrode 33 of the second smoothing capacitor C2, that is, an intermediate potential portion. Connecting. The intermediate potential connection conductor 42 is insulated by providing a dodge hole 45 that does not electrically contact the positive electrode 31 of the first smoothing capacitor C1 and the negative electrode 34 of the second smoothing capacitor C2.
As shown in FIG. 8, the low-potential connecting conductor 43 connects the fourth terminal 14 and the negative electrode 34 of the second smoothing capacitor C2, that is, the low-potential portion. The low-potential connection conductor 43 is provided with a dodge hole 45 that does not electrically contact the positive electrode 31 and the negative electrode 32 of the first smoothing capacitor C1 and the positive electrode 33 of the second smoothing capacitor C2, and is insulated.

FIG. 9 is a circuit diagram showing a path of a circulating current flowing through the DC / DC converter device (boost chopper circuit) 100.
In the DC / DC converter device 100, charging of the first smoothing capacitor C1 and charging of the second smoothing capacitor C2 are alternately performed, and the charging mode of the first smoothing capacitor C1 and the charging mode of the second smoothing capacitor C2 are performed. Circulating currents Ipc and Icn flow when the operation of is switched.

In the charging mode of the first smoothing capacitor C1, during the period when the second switching element Q2 is off and the third switching element Q3 is on, the current from the input DC power supply 3 is the first reactor 21 → the first diode D1 → the first. It flows through the smoothing capacitor C1 → the third switching element Q3 → the second reactor 22, and charges the first smoothing capacitor C1 to a required voltage value.
In the charging mode of the second smoothing capacitor C2, during the period when the second switching element Q2 is on and the third switching element Q3 is off, the current from the input DC power supply 3 is the first reactor 21 → the second switching element Q2 → the second. 2 Flows through the smoothing capacitor C2 → the fourth diode D4 → the second reactor 22, and charges the second smoothing capacitor C2 to a required voltage value.

When switching from the charging mode of the first smoothing capacitor C1 to the charging mode of the second smoothing capacitor C2, the first diode D1 moves in the forward direction at the moment when the second switching element Q2 turns on at the start of the charging mode of the second smoothing capacitor C2. The current that was flowing in the reverse direction temporarily flows in the opposite direction and then turns off. Due to the current flowing in the reverse direction of the first diode D1, a circulating current Ipc (shown by a solid arrow) circulating in the first smoothing capacitor C1 → the first diode D1 → the second switching element Q2 flows. After that, the switching surge voltage VM1 generated at the moment when the second switching element Q2 is turned off can be calculated based on the wiring inductance on the current path due to the circulating current Ipc.

Further, when the charging mode of the second smoothing capacitor C2 is switched to the charging mode of the first smoothing capacitor C1, the fourth diode D4 is set at the moment when the third switching element Q3 is turned on at the start of the charging mode of the first smoothing capacitor C1. The current flowing in the forward direction temporarily flows in the reverse direction and then turns off. Due to the current flowing in the reverse direction of the fourth diode D4, a circulating current Icn (shown by a dotted arrow) circulating in the second smoothing capacitor C2 → the third switching element Q3 → the fourth diode D4 flows. After that, the switching surge voltage VM2 generated at the moment when the third switching element Q3 is turned off can be calculated based on the wiring inductance on the current path due to the circulating current Icn.

FIG. 10 is a diagram showing paths of circulating currents Ipc and Icn flowing through the double chopper unit 60. As shown in FIG. 10, the path length of the circulating current Ipc and the path length of the circulating current Icn are equal, and the wiring inductance is substantially the same. Further, by arranging the positive electrodes and the negative electrodes of the first to fourth terminals 11 to 14 and the first and second smoothing capacitors C1 and C2 of the semiconductor module 50, the path lengths of the circulating currents Ipc and Icn can be shortened and the wiring inductance is reduced. can.
Then, the current flowing from the semiconductor module 50 to the first and second smoothing capacitors C1 and C2 and the current flowing from the first and second smoothing capacitors C1 and C2 to the semiconductor module 50 face each other in the laminated conductor 40. Therefore, the wiring inductance can be further reduced.

The switching surge voltage can be calculated by (DC applied voltage) + {(wiring inductance) × (current time change rate)}, and increases according to the magnitude of the wiring inductance. In this embodiment, as described above, the wiring inductances on the paths of the circulating currents Ipc and Icn can be reduced by making them substantially equal. The switching surge voltages VM1 and VM2 cause power loss and deterioration of the second and third switching elements Q2 and Q3, but both can be suppressed by reducing the wiring inductance. Therefore, the adverse effects of the switching surge voltages VM1 and VM2 can be suppressed.

FIG. 11 is a diagram showing a surge voltage generated in the DC / DC converter device 100, and shows the switching surge voltages VM1 and VM2 at the time of turn-off of the switching element together with the current I flowing through the switching element. Since the wiring inductances on the paths of the circulating currents Ipc and Icn are substantially equal, the difference between the switching surge voltage VM1 and the switching surge voltage VM2 can be reduced. Therefore, the loss difference of the semiconductor module 50 due to the product of the difference voltage Vdef and the current I generated in the difference period Tdef between VM1 and VM2 can be reduced.
Therefore, the semiconductor module 50 can be effectively cooled, which contributes to the miniaturization of the cooler 70.

The laminated conductor 40 is shown in which the low potential connecting conductor 43, the intermediate potential connecting conductor 42, and the high potential connecting conductor 41 are stacked in this order on the first and second smoothing capacitors C1 and C2 from the bottom. You may stack them in the order of, and the same effect can be obtained.

Further, regarding the switching surge voltage, the DC / DC converter device 100 which is a step-up chopper circuit has been described, but the DC / DC converter device 200 which is a step-down chopper circuit can also suppress the switching surge voltage and suppress its adverse effect. can.

Further, although the permissible temperature of the first and second smoothing capacitors C1 and C2 is generally lower than the permissible temperature of the semiconductor module 50, the first and second smoothing capacitors C1 and C2 are placed on the wind side of the cooling air. Because of the arrangement, the first and second smoothing capacitors C1, C2 and the semiconductor module 50 can be effectively cooled.
Furthermore, since the first and second smoothing capacitors C1 and C2 are arranged in the direction perpendicular to the direction of the cooling air, the first smoothing capacitor C1 and the second smoothing capacitor C2 are cooled equally by the cooling air. , There is no difference in cooling capacity.
Further, since the four switching elements Q1 to Q4 and the four diodes D1 to D4 are housed in one package 51 of the semiconductor module 50, the semiconductor module 50 is compared with the conventional one using a plurality of semiconductor modules. It can be effectively cooled, and the installation area is small, and the miniaturization of the DC / DC converter devices 100 and 200 can be promoted.

As a comparative example with respect to this embodiment, when the circuit configuration is the same as that in FIG. 1 and the two semiconductor modules M1 and M2 and the two smoothing capacitors C1 and C2 are arranged in a row in the same direction as the direction of the cooling air. Is shown in FIGS. 12 to 15.
FIG. 12 is a diagram showing a schematic circuit configuration of the DC / DC converter device 300 according to a comparative example. 13 is a schematic top view of the DC / DC converter device 300, and FIG. 14 is a schematic side view of the DC / DC converter device 300 shown in FIG. 13 as viewed from the front. Further, FIG. 15 is a diagram showing a path of circulating current.

As shown in FIG. 12, the DC / DC converter device 300 is a double chopper type step-up chopper circuit having the same circuit configuration as the DC / DC converter device 100 shown in FIG. That is, the chopper having the first bridge circuit 1, the first smoothing capacitor C1 and the first reactor 21, and the chopper having the second bridge circuit 2, the second smoothing capacitor C2 and the second reactor 22 are input DC power supplies. Prepare between 3 and load 4.
In this comparative example, the first bridge circuit 1 is housed in the semiconductor module M1, and the second bridge circuit 2 is housed in the semiconductor module M2.
That is, the package of the semiconductor module M1 contains two switching elements Q1 and Q2 and two diodes D1 and D2, and is formed so that the input / output terminals TA, TB, and TC are exposed to the outside. Ru. Further, in the package of the semiconductor module M2, two switching elements Q3 and Q4 and two diodes D3 and D4 are housed so that the input / output terminals TA, TB and terminal TC are exposed to the outside. Is formed in.

As shown in FIGS. 13 and 14, the DC / DC converter device 300 includes a laminated conductor 140 connecting the semiconductor modules M1 and M2 and the first and second smoothing capacitors C1 and C2. In each semiconductor module M1 and M2, three terminals TA, TB and TC are formed on one surface of a package. The two semiconductor modules M1 and M2 and the two smoothing capacitors C1 and C2 are arranged in a row in the same direction as the direction of the cooling air, and the six terminals of the semiconductor modules M1 and M2 and the first and second smoothing capacitors C1 and C2 are arranged. A total of 10 terminals, 4 terminals of the positive electrode and the negative electrode, are arranged side by side as shown in the figure. Further, the semiconductor modules M1 and M2 are fixed on the cooler 170.

The laminated conductor 140 is configured by laminating a high-potential connecting conductor 141 made of a conductor plate, an intermediate potential connecting conductor 142, and a low-potential connecting conductor 143 via an insulating material 144. Each conductor plate is provided with a dodge hole 45 for insulation.
The high-potential connection conductor 141 connects the terminal TA of the semiconductor module M1 and the positive electrode 31 of the first smoothing capacitor C1. The intermediate potential connection conductor 142 connects the terminal TC of the semiconductor module M1, the terminal TA of the semiconductor module M2, the negative electrode 32 of the first smoothing capacitor C1, and the positive electrode 33 of the second smoothing capacitor C2. The low-potential connection conductor 143 connects the terminal TC of the semiconductor module M2 and the negative electrode 34 of the second smoothing capacitor C2.
Further, the first reactor 21 is connected to the terminal TB of the semiconductor module M1, and the second reactor 22 is connected to the terminal TB of the semiconductor module M2.

In the DC / DC converter device 300 configured as described above, the above-mentioned circulating currents Ipc and Icn flow in the path as shown in FIG. In this case, the difference between the path length of the circulating current Ipc and the path length of the circulating current Icn is large, and the difference in wiring inductance is also large. Therefore, there is a limit to the suppression of the switching surge voltage, which causes an adverse effect. Further, since the first smoothing condenser C1 and the second smoothing condenser C2 are arranged on the upstream side and the downstream side with respect to the cooling air, they are not cooled in the same manner and cannot be cooled effectively. Further, since two semiconductor modules M1 and M2 are used, it is not suitable for reducing the installation area.

Compared with the comparative example as described above, the DC / DC converter devices 100 and 200 according to the first embodiment suppress the adverse effect of the switching surge voltage, can effectively cool each part, and have an installation area. Is small and miniaturization is promoted.

Next, the DC / DC converter device 100A according to another example of the first embodiment will be described below with reference to FIGS. 16 to 21. In this case, the arrangement of the positive electrodes and the negative electrodes of the first and fourth terminals of the semiconductor module and the first and second smoothing capacitors C1 and C2 is different from those of the DC / DC converter devices 100 and 200 described above. The same parts as those of the DC / DC converter devices 100 and 200 are designated by the same reference numerals, and the description thereof will be omitted as appropriate.

FIG. 16 is a diagram showing the arrangement of input / output terminals of the semiconductor module 50A in the DC / DC converter device 100A.
As shown in FIG. 16, the first terminal 11, the second terminal 12, the fourth terminal 14, and the third terminal 13 are arranged side by side on the first surface of the package 51A in this order. Further, the fifth terminal 15 and the sixth terminal 16 are arranged side by side on the second surface of the package 51A in this order.
The first terminal 11, the second terminal 12, the fourth terminal 14, and the third terminal 13 are arranged at substantially equal intervals and are electrically isolated from each other. Both the fifth terminal 15 and the sixth terminal 16 are electrically insulated from each other.

FIG. 17 is a schematic top view of the DC / DC converter device 100A, and FIG. 18 is a schematic side view of the DC / DC converter device 100A shown in FIG. 17 as viewed from the front.
As shown in FIGS. 17 and 18, the DC / DC converter device 100A includes a laminated conductor 40A connecting the semiconductor module 50A and the first and second smoothing capacitors C1 and C2. Then, a double chopper unit 60A, which is a unit including a semiconductor module 50A, first and second smoothing capacitors C1 and C2, and a laminated conductor 40A, is configured.

In the double chopper unit 60A, the first and second smoothing capacitors C1 and C2 are arranged on the right side and the semiconductor modules 50A are arranged on the left side in the drawing. Cooling air from the blower parts (not shown) is sent to the left. That is, the semiconductor module 50A is arranged on the downstream side of the cooling air from the first and second smoothing capacitors C1 and C2. Further, the first and second smoothing capacitors C1 and C2 are arranged in the direction perpendicular to the direction of the cooling air.

As described above, the first terminal 11, the second terminal 12, the fourth terminal 14, and the third terminal 13 of the semiconductor module 50A are arranged side by side on the first surface of the package 51A in this order. The first and second smoothing capacitors C1 and C2 are arranged so as to face the first surface of the package 51A, and the positive electrode 31, the negative electrode 32 of the first smoothing capacitor C1 and the negative electrode 34 of the second smoothing capacitor C2 are arranged. The four terminals of the positive electrode 33 are arranged in this order so as to face the first surface of the package 51A.
The laminated conductor 40A is configured by laminating a high-potential connecting conductor 41 made of a conductor plate, an intermediate potential connecting conductor 42A, and a low-potential connecting conductor 43A via an insulating material 44. The three conductor plates are all composed of the same width and length except for the terminal portion 48 that protrudes for connecting to the semiconductor module 50A. In this case as well, the layers may be laminated in any order.

19 to 21 are plan views showing a part of the double chopper unit 60A, respectively. FIG. 19 shows how the semiconductor module 50A and the first smoothing capacitor C1 are connected by the high potential connecting conductor 41. FIG. 20 shows how the semiconductor module 50A and the first and second smoothing capacitors C1 and C2 are connected by the intermediate potential connecting conductor 42A. FIG. 21 shows how the semiconductor module 50A and the second smoothing capacitor C2 are connected by the low potential connection conductor 43A.

Also in this DC / DC converter device 100A, the path length of the circulating current Ipc flowing through the double chopper unit 60A and the path length of the circulating current Icn can be equal and shortened, as in the case of the above-mentioned DC / DC converter devices 100 and 200. The wiring inductance can be reduced, and the adverse effects of the switching surge voltages VM1 and VM2 can be suppressed. Further, as in the case of the DC / DC converter devices 100 and 200, each part can be effectively cooled, the installation area is small, and miniaturization can be promoted.

Embodiment 2.
Next, the DC / DC converter device 100B according to the second embodiment will be described below with reference to FIGS. 22 to 25. In this case, the configuration of the laminated conductor is different from the DC / DC converter devices 100 and 200 of the first embodiment. The same parts as those of the DC / DC converter devices 100 and 200 are designated by the same reference numerals, and the description thereof will be omitted as appropriate.
22 is a schematic top view of the DC / DC converter device 100B, and FIG. 23 is a schematic side view of the DC / DC converter device 100B shown in FIG. 22 as viewed from the front.

As shown in FIGS. 22 and 23, the DC / DC converter device 100B includes a laminated conductor 40B connecting the semiconductor module 50 and the first and second smoothing capacitors C1 and C2. Then, a double chopper unit 60B, which is a unit including the semiconductor module 50, the first and second smoothing capacitors C1 and C2, and the laminated conductor 40B, is configured.
In this case, the same semiconductor module 50 as the DC / DC converter devices 100 and 200 is used, that is, the first terminal 11, the second terminal 12, the third terminal 13 and the fourth terminal 14 are the first of the package 51 in this order. Arranged side by side on the surface. Then, the first and second smoothing capacitors C1 and C2 are arranged so as to face the first surface of the package 51, and the positive electrode 31, the negative electrode 32 of the first smoothing capacitor C1 and the positive electrode 33 of the second smoothing capacitor C2 are arranged. The four terminals of the negative electrode 34 are arranged in this order so as to face the first surface of the package 51.

Further, in the double chopper unit 60B, the first and second smoothing capacitors C1 and C2 are arranged on the right side and the semiconductor module 50 is arranged on the left side in the drawing, and the fan is arranged from the right side of the first and second smoothing capacitors C1 and C2. Cooling air from the blower parts (not shown) such as, etc. is sent to the left. That is, the semiconductor module 50 is arranged on the downstream side of the cooling air from the first and second smoothing capacitors C1 and C2. Further, the first and second smoothing capacitors C1 and C2 are arranged in the direction perpendicular to the direction of the cooling air.

The laminated conductor 40B is configured by laminating a high-potential connecting conductor 41B made of a conductor plate, an intermediate potential connecting conductor 42, and a low-potential connecting conductor 43B via an insulating material 44. The three conductor plates constituting the high-potential connecting conductor 41B, the intermediate-potential connecting conductor 42, and the low-potential connecting conductor 43B include a terminal portion 48 protruding for connecting to the semiconductor module 50.
The high potential connection conductor 41B connects the first terminal 11 and the positive electrode 31 of the first smoothing capacitor C1. The intermediate potential connection conductor 42 connects the second terminal 12 and the third terminal 13 to the negative electrode 32 of the first smoothing capacitor C1 and the positive electrode 33 of the second smoothing capacitor C2. The low potential connection conductor 43B connects the fourth terminal 14 and the negative electrode 34 of the second smoothing capacitor C2.

As shown in FIG. 23, in the laminated conductor 40B, the high-potential connecting conductor 41B and the low-potential connecting conductor 43B are arranged at the same positions in the stacking direction, and the high-potential connecting conductor 41B and the low-potential connecting conductor 43B are connected to each other at an intermediate potential. The conductor 42 and the conductor 42 are laminated via the insulating material 44. As a result, the laminated conductor 40B having a two-layer structure is formed.
In this case, the intermediate potential connecting conductor 42 is arranged on the first and second smoothing capacitors C1 and C2 from the bottom, and the insulating material 44 having a width and length larger than that of the conductor plate of the intermediate potential connecting conductor 42 is placed on the intermediate potential connecting conductor 42. A high-potential connecting conductor 41B and a low-potential connecting conductor 43B are arranged therethrough. The high-potential connecting conductor 41B and the low-potential connecting conductor 43B are formed and arranged in a width and length corresponding to the intermediate potential connecting conductor 42 so as to overlap the end face of the intermediate potential connecting conductor 42, except for the terminal portion 48. Will be done.
In this case as well, the layers may be stacked in any order, and the high-potential connecting conductor 41B and the low-potential connecting conductor 43B may be arranged in the lower layer, and the intermediate potential connecting conductor 42 may be arranged in the upper layer.

The laminated conductor 40B is connected to the first to fourth terminals 11 to 14 of the semiconductor module 50 by a conductive material such as a metal screw. Similarly, the laminated conductor 40B is connected to the positive electrode 31, the negative electrode 32 of the first smoothing capacitor C1, the positive electrode 33 of the second smoothing capacitor C2, and the four terminals of the negative electrode 34 by a conductive material such as a metal screw. The high-potential connecting conductor 41B, the intermediate-potential connecting conductor 42, and the low-potential connecting conductor 43B of the laminated conductor 40B are provided with dodge holes 45, respectively, and are connected to other than the desired terminals of the first and second smoothing capacitors C1 and C2. Avoid connections.

24 and 25 are plan views showing a part of the double chopper unit 60B, respectively.
FIG. 24 shows how the semiconductor module 50 and the first and second smoothing capacitors C1 and C2 are connected by the high potential connection conductor 41B and the low potential connection conductor 43B, respectively. As shown in FIG. 24, the high-potential connection conductor 41B and the low-potential connection conductor 43B are made of conductive plates having the same width and length except for the terminal portion 48, and the high-potential connection conductor 41B is a region of the second smoothing capacitor C2. It does not extend above, and the low potential connection conductor 43B does not extend over the region of the first smoothing capacitor C1. The high-potential connecting conductor 41B and the low-potential connecting conductor 43B are arranged at the same height position.

The high-potential connection conductor 41B connects the first terminal 11 and the positive electrode 31 of the first smoothing capacitor C1, that is, connects the high-potential portion. The high-potential connection conductor 41B is provided with a dodge hole 45 that does not electrically contact the negative electrode 32 of the first smoothing capacitor C1 to insulate it.
The low-potential connection conductor 43B connects the fourth terminal 14 and the negative electrode 34 of the second smoothing capacitor C2, that is, connects the low-potential portion. The low-potential connection conductor 43B is insulated by providing a dodge hole 45 that does not electrically contact the positive electrode 33 of the second smoothing capacitor C2.

FIG. 25 shows how the semiconductor module 50 and the first and second smoothing capacitors C1 and C2 are connected by the intermediate potential connecting conductor 42. As shown in FIG. 25, the intermediate potential connection conductor 42 connects the second terminal 12 and the third terminal 13 to the negative electrode 32 of the first smoothing capacitor C1 and the positive electrode 33 of the second smoothing capacitor C2.

Also in this embodiment, similarly to the first embodiment, the path length of the circulating current Ipc flowing through the double chopper unit 60B and the path length of the circulating current Icn can be equal and shortened, and the wiring inductance can be reduced. Therefore, the adverse effects of the switching surge voltages VM1 and VM2 can be suppressed. In addition, each part can be effectively cooled, the installation area is small, and miniaturization can be promoted.
Further, since the laminated conductor 40B has a two-layer structure, miniaturization can be further promoted and cost can be reduced.

Since the area of each conductor plate of the high-potential connecting conductor 41B and the low-potential connecting conductor 43B is smaller than that of the first embodiment, the effect of reducing the wiring inductance is inferior to that of the first embodiment.

Next, the DC / DC converter device 100C according to another example of the second embodiment will be described below with reference to FIGS. 26 to 29. In this case, the arrangement of the positive electrodes and the negative electrodes of the first to fourth terminals and the first and second smoothing capacitors C1 and C2 of the semiconductor module is the same as that of the other example of the first embodiment shown in FIGS. 16 to 21. be. The same parts as those of the DC / DC converter devices 100, 200, 100A, and 100B are designated by the same reference numerals, and the description thereof will be omitted as appropriate.
FIG. 26 is a schematic top view of the DC / DC converter device 100C, and FIG. 27 is a schematic side view of the DC / DC converter device 100C shown in FIG. 26 as viewed from the front.

As shown in FIGS. 26 and 27, the DC / DC converter device 100C includes a laminated conductor 40C connecting the semiconductor module 50A and the first and second smoothing capacitors C1 and C2. Then, a double chopper unit 60C, which is a unit including a semiconductor module 50A, first and second smoothing capacitors C1 and C2, and a laminated conductor 40C, is configured.
In this case, the first terminal 11, the second terminal 12, the fourth terminal 14, and the third terminal 13 of the semiconductor module 50A are arranged side by side on the first surface of the package 51A in this order. The first and second smoothing capacitors C1 and C2 are arranged so as to face the first surface of the package 51A, and the positive electrode 31, the negative electrode 32 of the first smoothing capacitor C1 and the negative electrode 34 of the second smoothing capacitor C2 are arranged. The four terminals of the positive electrode 33 are arranged in this order so as to face the first surface of the package 51A.

The laminated conductor 40C is configured by laminating a high-potential connecting conductor 41B made of a conductor plate, an intermediate potential connecting conductor 42A, and a low-potential connecting conductor 43C via an insulating material 44. The three conductor plates constituting the high-potential connecting conductor 41B, the intermediate-potential connecting conductor 42A, and the low-potential connecting conductor 43C include a terminal portion 48 protruding for connecting to the semiconductor module 50A.
The high potential connection conductor 41B connects the first terminal 11 and the positive electrode 31 of the first smoothing capacitor C1. The intermediate potential connection conductor 42A connects the second terminal 12 and the third terminal 13 to the negative electrode 32 of the first smoothing capacitor C1 and the positive electrode 33 of the second smoothing capacitor C2. The low-potential connection conductor 43C connects the fourth terminal 14 and the negative electrode 34 of the second smoothing capacitor C2.

As shown in FIG. 27, in the laminated conductor 40C, the high-potential connecting conductor 41B and the low-potential connecting conductor 43C are arranged at the same positions in the stacking direction, and the high-potential connecting conductor 41B and the low-potential connecting conductor 43C are connected to each other at an intermediate potential. The conductor 42A and the conductor 42A are laminated via the insulating material 44. As a result, the laminated conductor 40C having a two-layer structure is formed. In this case as well, the layers may be laminated in any order.

28 and 29 are plan views showing a part of the double chopper unit 60C.
FIG. 28 shows how the semiconductor module 50A and the first and second smoothing capacitors C1 and C2 are connected by the high potential connection conductor 41B and the low potential connection conductor 43C, respectively. As shown in FIG. 28, the high-potential connection conductor 41B and the low-potential connection conductor 43C are made of conductive plates having the same width and length except for the terminal portion 48, and the high-potential connection conductor 41B is a region of the second smoothing capacitor C2. It does not extend above, and the low potential connection conductor 43C does not extend over the region of the first smoothing capacitor C1. The high-potential connecting conductor 41B and the low-potential connecting conductor 43C are arranged at the same height position.
The high-potential connecting conductor 41B connects the first terminal 11 and the positive electrode 31 of the first smoothing capacitor C1, and the low-potential connecting conductor 43C connects the fourth terminal 14 and the negative electrode 34 of the second smoothing capacitor C2.

FIG. 29 shows how the semiconductor module 50A and the first and second smoothing capacitors C1 and C2 are connected by the intermediate potential connection conductor 42A. As shown in FIG. 29, the intermediate potential connection conductor 42A connects the second terminal 12 and the third terminal 13 to the negative electrode 32 of the first smoothing capacitor C1 and the positive electrode 33 of the second smoothing capacitor C2.

Also in this DC / DC converter device 100C, the path length of the circulating current Ipc flowing through the double chopper unit 60C and the path length of the circulating current Icn can be equal and short, and wiring is performed in the same manner as in the case of the DC / DC converter device 100B described above. Inductance can be reduced, and adverse effects due to switching surge voltages VM1 and VM2 can be suppressed. Further, as in the case of the DC / DC converter device 100B, each part can be effectively cooled, the installation area is small, and miniaturization can be promoted.

Embodiment 3.
Next, the DC / DC converter device 110 according to the third embodiment will be described below with reference to FIGS. 30 to 35. The same parts as those in the first embodiment will be referred to by the same reference numerals, and the description thereof will be omitted as appropriate.
FIG. 30 is a diagram showing a schematic circuit configuration of the DC / DC converter device 110 according to the third embodiment. 31 is a schematic top view of the DC / DC converter device 110, and FIG. 32 is a schematic side view of the DC / DC converter device 110 shown in FIG. 31 as viewed from the front.

As shown in FIG. 30, the DC / DC converter device 110 consists of a semiconductor module 50 shown in FIG. 1 and two sets of first and second smoothing capacitors C1 and C2 connected in parallel.
As shown in FIGS. 31 and 32, the DC / DC converter device 110 includes a laminated conductor 40D connecting two sets of semiconductor modules 50 and two sets of first and second smoothing capacitors C1 and C2. Then, a double chopper unit 60D, which is a unit including two sets of semiconductor modules 50, first and second smoothing capacitors C1 and C2, and a laminated conductor 40D, is configured.

Similar to the first embodiment, the first terminal 11, the second terminal 12, the third terminal 13, and the fourth terminal 14 of each semiconductor module 50 are arranged side by side on the first surface of the package 51 in this order. Then, the first and second smoothing capacitors C1 and C2 are arranged so as to face the first surface of the package 51, and the positive electrode 31, the negative electrode 32 of the first smoothing capacitor C1 and the positive electrode 33 of the second smoothing capacitor C2 are arranged. The four terminals of the negative electrode 34 are arranged in this order so as to face the first surface of the package 51. The fifth terminal 15 and the sixth terminal 16 of each semiconductor module 50 are arranged on the second surface of the package 51, which is different from the first surface, and are connected to the first and second reactors 21 and 22, respectively.

In the double chopper unit 60D, the first and second smoothing capacitors C1 and C2 are arranged on the right side and the semiconductor module 50 is arranged on the left side in the drawing. Cooling air from the blower parts (not shown) is sent to the left. The two semiconductor modules 50 are arranged in the direction perpendicular to the direction of the cooling air, and are arranged on the downstream side of the cooling air from the first and second smoothing capacitors C1 and C2. Further, a total of four first and second smoothing capacitors C1 and C2 are arranged in a direction perpendicular to the direction of the cooling air.
The two semiconductor modules 50 are fixed on the cooler 71 with screws or the like.

The laminated conductor 40D is configured by laminating a high-potential connecting conductor 41D made of a conductor plate, intermediate potential connecting conductors 42DA and 42DB, and a low potential connecting conductor 43D via an insulating material 44D. The four conductor plates constituting the high-potential connection conductor 41D, the intermediate-potential connection conductor 42DA, 42DB, and the low-potential connection conductor 43D include a terminal portion 48 protruding for connecting to the semiconductor module 50.

The high-potential connection conductor 41D connects the two first terminals 11 and the positive electrode 31 of the two first smoothing capacitors C1. The intermediate potential connection conductors 42DA and 42DB connect the second terminal 12 and the third terminal 13 to the negative electrode 32 of the first smoothing capacitor C1 and the positive electrode 33 of the second smoothing capacitor C2 in each semiconductor module 50. The low-potential connection conductor 43D connects the two fourth terminals 14 and the negative electrode 34 of the two second smoothing capacitors C2.

As shown in FIG. 32, on the two sets of the first and second smoothing capacitors C1 and C2, the low potential connecting conductor 43D, the intermediate potential connecting conductors 42DA, 42DB, and the high potential connecting conductor 41D are placed in the same region in this order from the bottom. It is laminated via the insulating material 44D. As a result, the laminated conductor 40D having a three-layer structure is formed. The high-potential connection conductor 41D and the low-potential connection conductor 43D are formed of a conductive plate having the same width and length except for the terminal portion 48, and the insulating material 44D is wider than the high-potential connection conductor 41D and the low-potential connection conductor 43D. And the length is large. The two intermediate potential connecting conductors 42DA and 42DB are formed of conductive plates having the same width and length, are arranged at the same positions in the stacking direction, and overlap with the end faces of the high potential connecting conductor 41D and the low potential connecting conductor 43D. Be placed.

Also in this case, the laminated conductor 40D is connected to the first to fourth terminals 11 to 14 of each semiconductor module 50 by a conductive material such as a metal screw, and similarly, the positive electrodes of the first and second smoothing capacitors C1 and C2, respectively. , 8 terminals of the negative electrode are connected with a conductive material such as a metal screw. The low-potential connecting conductor 43D, the intermediate-potential connecting conductors 42DA, 42DB, and the high-potential connecting conductor 41D of the laminated conductor 40D are provided with dodge holes 45, respectively, except for the desired terminals of the first and second smoothing capacitors C1 and C2. Avoid connecting with.

33 to 35 are plan views showing a part of the double chopper unit 60D, respectively.
As shown in FIG. 33, the high-potential connection conductor 41D connects the two first terminals 11 and the positive electrode 31 of the two first smoothing capacitors C1, that is, the high-potential portion. The high-potential connection conductor 41D is provided with a dodge hole 45 that does not electrically contact the negative electrode 32 of each first smoothing capacitor C1 and the positive electrode 33 and the negative electrode 34 of each second smoothing capacitor C2 to insulate the conductor 41D.

As shown in FIG. 34, the intermediate potential connection conductors 42DA and 42DB are the second terminal 12 and the third terminal 13 of each semiconductor module 50, and the negative electrode 32 and the second smoothing capacitor of the first smoothing capacitor C1 to be connected. The positive electrode 33 of C2 is connected, that is, the intermediate potential portion is connected. The intermediate potential connection conductors 42DA and 42DB are insulated by providing dodge holes 45 that do not electrically contact the positive electrode 31 of each first smoothing capacitor C1 and the negative electrode 34 of each second smoothing capacitor C2.

As shown in FIG. 35, the low-potential connection conductor 43D connects the two fourth terminals 14 and the negative electrode 34 of the two second smoothing capacitors C2, that is, the low-potential portion. The low-potential connection conductor 43D is insulated by providing a dodge hole 45 that does not electrically contact the positive electrode 31 and the negative electrode 32 of each first smoothing capacitor C1 and the positive electrode 33 of each second smoothing capacitor C2.

Also in this DC / DC converter device 110, the path length of the circulating current Ipc flowing through the double chopper unit 60D and the path length of the circulating current Icn can be equal and shortened. Further, the current flowing from the semiconductor module 50 to the first and second smoothing capacitors C1 and C2 and the current flowing from the first and second smoothing capacitors C1 and C2 to the semiconductor module 50 face each other in the laminated conductor 40D. Therefore, the wiring inductance can be further reduced.
Therefore, the wiring inductance can be reduced, and the adverse effects of the switching surge voltages VM1 and VM2 can be suppressed. In addition, each part can be effectively cooled, the installation area is small, and miniaturization can be promoted.

In this case as well, the order in which the low-potential connecting conductor 43D, the intermediate potential connecting conductor 42DA, 42DB, and the high-potential connecting conductor 41D are laminated is not limited to this.
Further, in the above embodiment, the step-up chopper circuit is used, but a step-down chopper circuit may be used.
Further, although the semiconductor module 50 and two sets of the first and second smoothing capacitors C1 and C2 connected in parallel are shown, the present invention can also be applied to a configuration in which three or more sets are connected in parallel.

Although the present application describes various exemplary embodiments and examples, the various features, embodiments, and functions described in one or more embodiments are applications of a particular embodiment. It is not limited to, but can be applied to embodiments alone or in various combinations.
Therefore, innumerable variations not exemplified are envisioned within the scope of the techniques disclosed in the present application. For example, it is assumed that at least one component is modified, added or omitted, and further, at least one component is extracted and combined with the components of other embodiments.

1 1st bridge circuit, 2 2nd bridge circuit, 11-14 1st to 4th terminals, 15 5th terminal, 16 6th terminal, 21 1st conductor, 22 2nd conductor, 31 positive electrode, 32 negative electrode, 33 positive electrode , 34 Negative electrode, 40, 40A, 40B, 40C, 40D laminated conductor, 41, 41B, 41D high potential connection conductor, 42, 42A, 42DA, 42DB intermediate potential connection conductor, 43, 43A, 43B, 43C, 43D low potential connection Conductor, 44,44D Insulation Material, 50,50A Semiconductor Module, 51,51A Package, 100,100A, 100B, 100C, 110,200 DC / DC Converter Device, C1 First Smoothing Capacitor, C2 Second Smoothing Capacitor, D1- D4 1st to 4th diodes, Q1 to Q4 1st to 4th switching elements.

Claims (9)

The first bridge circuit in which the first switching element and the second switching element in which the diodes are connected in antiparallel connection are connected in series, and the third switching element and the fourth switching element in which the diodes are connected in antiparallel connection are connected in series, respectively. A semiconductor module that houses the second bridge circuit in one package,
The first and second smoothing capacitors and
A laminated conductor for connecting the semiconductor module and the first and second smoothing capacitors is provided.
The semiconductor module has first to fourth terminals which are input / output terminals provided side by side on the first surface of the package, and fifth and fourth terminals which are input / output terminals provided side by side on the second surface of the package. A sixth terminal is provided, the first bridge circuit is connected between the first terminal and the second terminal, and the second bridge circuit is connected between the third terminal and the fourth terminal. , The intermediate terminal of the first bridge circuit is connected to the fifth terminal, and the intermediate terminal of the second bridge circuit is connected to the sixth terminal.
The first and second smoothing capacitors are arranged so as to face the first surface of the package.
The laminated conductor includes a high-potential connecting conductor connecting the first terminal and the positive electrode of the first smoothing capacitor, a low-potential connecting conductor connecting the fourth terminal and the negative electrode of the second smoothing capacitor, and the above. An intermediate potential connecting conductor connecting the second terminal and the third terminal to the negative electrode of the first smoothing capacitor and the positive electrode of the second smoothing capacitor is laminated.
DC / DC converter device. The first terminal, the second terminal, the third terminal, and the fourth terminal are arranged on the first surface of the package in this order, and the positive electrode of the first smoothing capacitor and the negative electrode of the first smoothing capacitor are arranged in this order. The positive electrode of the second smoothing capacitor and the negative electrode of the second smoothing capacitor are arranged so as to face the first surface of the package in this order.
The DC / DC converter device according to claim 1. The first terminal, the second terminal, the fourth terminal, and the third terminal are arranged on the first surface of the package in this order, and the positive electrode of the first smoothing capacitor and the negative electrode of the first smoothing capacitor are arranged in this order. The negative electrode of the second smoothing capacitor and the positive electrode of the second smoothing capacitor are arranged so as to face the first surface of the package in this order.
The DC / DC converter device according to claim 1. The high-potential connecting conductor, the low-potential connecting conductor, and the intermediate-potential connecting conductor are each composed of a conductor plate, and the laminated conductor has a three-layer structure in which the three conductor plates are each laminated via an insulating material. Become,
The DC / DC converter device according to any one of claims 1 to 3. The high-potential connecting conductor, the low-potential connecting conductor, and the intermediate-potential connecting conductor are each composed of a conductor plate, and the high-potential connecting conductor and the low-potential connecting conductor are arranged at the same position in the stacking direction. The high-potential connecting conductor, the low-potential connecting conductor, and the intermediate-potential connecting conductor were laminated via an insulating material, and the laminated conductor had a two-layer structure.
The DC / DC converter device according to any one of claims 1 to 3. Reactors are connected to the fifth and sixth terminals of the semiconductor module, respectively.
The DC / DC converter device according to any one of claims 1 to 5. The first and second smoothing capacitors are arranged in the direction perpendicular to the direction of the cooling air.
The DC / DC converter device according to any one of claims 1 to 6. The semiconductor module is arranged on the downstream side of the cooling air from the first and second smoothing capacitors.
The DC / DC converter device according to claim 7. A plurality of sets of the semiconductor module and the first and second smoothing capacitors are provided, and the plurality of semiconductor modules are arranged in a direction perpendicular to the direction of the cooling air.
The DC / DC converter device according to claim 7 or 8.

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