JPWO2013154181A1 - Manufacturing method of light emitting device having chip-on-board type package substrate - Google Patents

Abstract

A method of manufacturing a light-emitting device capable of forming a semiconductor light-emitting portion on a chip-on-board type package substrate body without a growth substrate is provided. A method of manufacturing a light-emitting device including a chip-on-board type package substrate having a plurality of light-emitting diode light-emitting portions, and each light-emitting diode without bonding a plurality of light-emitting diode elements to another substrate of a growth substrate A mounting process in which each element is directly mounted on the package substrate main body, and a laser having a spot diameter larger than that of the light emitting diode element is scanned in a state where each light emitting diode element is directly mounted on the package substrate main body. And a peeling process for uniformly irradiating the entire device with the laser for each light emitting diode element and peeling the entire part of the growth substrate. [Selection] Figure 9

Description

  The present invention relates to a method for manufacturing a light emitting device having a chip-on-board type package substrate.

  Light emitting devices using group III nitride semiconductors have been put into practical use. This group III nitride semiconductor is generally grown on a growth substrate made of a different material having a similar crystal structure by using metal organic chemical vapor deposition (MOCVD) or molecular beam evaporation (MBE). It is. As the growth substrate, a sapphire substrate having a hexagonal structure is mainly used.

  As a method for separating the growth substrate, a laser lift-off technique is mainly used (see, for example, Patent Document 1). In Patent Document 1, a group III nitride semiconductor layer is grown on a growth substrate, a second substrate is bonded onto the group III nitride semiconductor layer, and then irradiated with a laser beam from the growth substrate side. A laser lift method for separating a growth substrate from a nitride semiconductor layer is described.

  Patent Document 2 describes using an AlN substrate as the second substrate, and Patent Document 3 describes using a submount as the second substrate. In the techniques described in Patent Document 2 and Patent Document 3, after a plurality of semiconductor element structures are formed on a growth substrate, the growth substrate is transferred to an AlN substrate and a submount at a time, and then the growth substrate is peeled off using a laser beam. Thus, a surface-mount type LED device is obtained. The LED device including the AlN substrate and the submount is mounted on the package substrate of the light emitting device. That is, these technologies relate to the surface mount type rather than the chip on board type.

  Here, if the spot diameter of the laser beam is about 50 mm to 300 mm, which is the standard size of the wafer, the power required for separation cannot be obtained. Therefore, a system is used in which line scanning is performed with a laser beam size about the final chip size.

  However, in the lift-off methods described in Patent Documents 1 to 3, since the laser beam is line-scanned, it is difficult to uniformly irradiate the entire wafer with the beam. As a result, there occurs a distribution in the separation of the growth substrate, a variation in the characteristics of the obtained light emitting elements, and there are many initial defective light emitting elements, resulting in poor yield.

  Here, in Patent Document 4, a group III nitride semiconductor layer is grown on a growth substrate, a second substrate is bonded onto the group III nitride semiconductor layer, and then the entire wafer is scanned without performing a line scan. It is described that a laser is irradiated for each region of a scribe line corresponding to an element. However, even with this method, it is not possible to uniformly irradiate the boundary part of each element with a beam, and when the growth substrate is peeled off in units of wafers, distribution occurs in the boundary part of each element. Yield is still bad. In addition, when a scribe line is formed on the wafer, the growth substrate may be cracked or distorted, which may worsen the yield.

JP 2011-49518 A Special table 2008-533716 JP 2005-252222 A JP 2012-16727 A

  Further, if the growth substrate is separated before the light emitting element is cut out without the second substrate, there is a problem that only the semiconductor layer is formed and handling becomes difficult. Thus, only the semiconductor layer cannot be disposed on the package substrate unless the semiconductor layer is thick enough to be handled. Therefore, in Patent Document 1, Patent Document 2, Patent Document 3, and Patent Document 4, all use the second substrate.

  Since the obtained light-emitting element has the second substrate in addition to the group III nitride semiconductor layer necessary for light emission, the second light-emitting element is mounted on the chip-on-board type package substrate. There is a possibility that the optical and thermal performances are deteriorated due to the substrate.

  Furthermore, since the techniques described in Patent Document 2 and Patent Document 3 must use the semiconductor element structure formed on the growth substrate regardless of whether the product is non-defective or defective, the yield is extremely poor. There is a point.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a light-emitting device capable of forming a semiconductor light-emitting unit on a chip-on-board type package substrate body without a growth substrate. A manufacturing method is provided.

  The present invention provides a method for manufacturing a light-emitting device including a chip-on-board type package substrate having a plurality of light-emitting diode light-emitting portions, a growth substrate, a semiconductor light-emitting portion on the growth substrate, and a semiconductor light-emitting portion on the semiconductor light-emitting portion A selection step of selecting light-emitting diode elements satisfying a desired performance from a plurality of independent flip-chip light-emitting diode elements each having an electrode, and a plurality of light-emitting diode elements selected in the selection step A mounting step in which each light emitting diode element is directly mounted on the package substrate body separately without being bonded to another substrate on the growth substrate, and each light emitting diode element is directly mounted on the package substrate body. In this state, each light emitting diode is scanned without scanning a laser having a spot diameter larger than that of the light emitting diode element. The laser is uniformly irradiated to the entire device for each de device, method of manufacturing the light-emitting device including, a peeling step of peeling the entire portion of the growth substrate.

According to this method for manufacturing a light emitting device, in the mounting process, a plurality of light emitting diode elements are flip-chip mounted on the package substrate body, and each light emitting diode element is electrically connected to the package substrate body. Next, the growth substrate is peeled off in the peeling step, and the semiconductor light emitting portion remains on the package substrate body.
Thus, since only the semiconductor layer remains on the package substrate main body, the optical and thermal performances are not deteriorated due to other substrates such as the growth substrate. Further, since the growth substrate is peeled off after mounting the light emitting diode element, a thin semiconductor layer can be formed on the package substrate body.
Further, at the time of lift-off, it suffices to irradiate each separated light emitting diode element with a laser, and in a state where the elements are not separated, the entire wafer is line-scanned or the laser is irradiated for each region of the scribe line corresponding to the element. Compared with the method, it is possible to suppress the occurrence of distribution in the separation of the growth substrate, and the yield can be improved. In particular, since a laser having a spot diameter larger than that of the light emitting diode element is used, each light emitting diode can be irradiated with a beam uniformly.
Furthermore, light emitting diode elements that satisfy the desired performance in the sorting step can be sorted and used, and this can also improve the yield. That is, there is no possibility that an element having an initial failure is included unlike a conventional device in which a plurality of semiconductor element structures are formed on a growth substrate and pasted to a submount or an AlN substrate all at once.

  The method for manufacturing a light emitting device may further include a withdrawal step in which the remnants of the growth substrate on the package substrate body are collectively removed by blowing gas after the peeling step.

  In the method for manufacturing a light emitting device, in the mounting step, the position of each light emitting diode element on the package substrate body may be determined by being recognized by a CCD camera.

  Further, in the method for manufacturing the light emitting device, the semiconductor light emitting portion remaining after the growth substrate is removed on the package substrate main body may be 10 μm or less.

  In the method for manufacturing the light emitting device, the growth substrate may be a sapphire substrate.

  Further, in the method for manufacturing a light emitting device, each of the light emitting diode elements is directly mounted on the package substrate body, aligned in a vertical direction and a horizontal direction on the package substrate body, and according to a circuit pattern on the package substrate body. They may be electrically connected in series and parallel to each other.

  Moreover, in this invention, the light-emitting device manufactured by the said manufacturing method is provided.

  According to the present invention, a thin semiconductor light emitting unit can be formed on a package substrate without a growth substrate.

FIG. 1 is a schematic side view of a light emitting device showing an embodiment of the present invention. FIG. 2 is a plan view of the package substrate. FIG. 3A is a schematic overall cross-sectional view of a light emitting element used as a semiconductor light emitting unit before removing the growth substrate, and FIG. 3B is a schematic view of the light emitting element used as a semiconductor light emitting unit before removing the growth substrate. It is an expanded sectional view. FIG. 4 is an explanatory diagram for forming the semiconductor light emitting unit on the package substrate body, and shows a state in which the light emitting element is set above the mounting position of the package substrate body. FIG. 5 is an explanatory diagram of forming the semiconductor light emitting unit on the package substrate body, and shows a state in which the light emitting element is mounted on the package substrate body. FIG. 6 is an explanatory diagram for forming the semiconductor light emitting unit on the package substrate body, and shows a state in which a laser is irradiated on the growth substrate of the light emitting element. FIG. 7 is a schematic explanatory diagram of a laser irradiation apparatus. FIG. 8 is an explanatory diagram of forming the semiconductor light emitting unit on the package substrate body, and shows a state in which the growth substrate of the light emitting element is removed. 9A and 9B are cross-sectional views of a light emitting device, in which FIG. 9A shows an embodiment of the present invention, and FIG. 9B shows a conventional device. FIG. 10 is an explanatory view of forming a semiconductor light emitting unit according to a modification on the package substrate body, and shows a state in which the growth substrate is separated by chemical etching. FIG. 11 is an explanatory diagram of forming the semiconductor light emitting unit on the package substrate body, and shows a state where the growth substrate of the light emitting element is removed.

  1 to 9 show an embodiment of the present invention, and FIG. 1 is a schematic side view of a light emitting device.

  As shown in FIG. 1, the light-emitting device 1 includes a glass casing 2 and a terminal portion 4 formed on the lower side of the casing 2 and electrically connected to an external power source. A package substrate 50 is accommodated therein. The package substrate 50 extends from the terminal portion 4, is supported by a support portion 5 made of an inorganic material, and is electrically connected to the terminal portion 4 by an internal conductor 6.

  As shown in FIG. 2, the package substrate 50 includes a package substrate main body 10, a plurality of semiconductor light emitting units 22 arranged on the package substrate main body 10, a circuit pattern 11 of the package substrate main body 10, and a semiconductor light emitting unit. And a solder 32 to be described later. Further, the package substrate 50 includes a sealing resin 40 (see FIG. 9A) that seals the semiconductor light emitting unit 22 on the package substrate body 10. The package substrate 50 is a chip-on-board type and is directly connected to the internal conductor 6.

Although the material of the package substrate main body 10 is arbitrary, for example, AlN, Si, Cu, Al ₂ O ₃ , SiC, or the like is used. It is also possible to use a synthetic resin such as glass epoxy for the package substrate body 10. A circuit pattern 11 for supplying power to each semiconductor light emitting unit 22 is formed on the package substrate body 10. In the present embodiment, the package substrate body 10 is formed in a square shape, and the semiconductor light emitting units 22 are arranged in alignment in the vertical direction and the horizontal direction.

FIG. 3A is a schematic overall cross-sectional view of a light-emitting element used as a semiconductor light-emitting portion before the growth substrate is removed.
As shown in FIG. 3A, the light emitting diode element 20 is a flip chip type, and a semiconductor light emitting portion 22 made of a group III nitride semiconductor layer is formed on the surface of a growth substrate 21. . The growth substrate 21 is made of, for example, sapphire. Further, a p-side electrode 28 and an n-side electrode 29 are formed on the semiconductor light emitting unit 22 as described later.

FIG. 3B is a schematic enlarged cross-sectional view of the light-emitting element used as a semiconductor light-emitting portion before removing the growth substrate. In FIG. 3B, a part of the growth substrate 21 is omitted for illustration.
As shown in FIG. 3B, the semiconductor light emitting unit 22 has a buffer layer 23, an n-type GaN layer 24, an active layer 25, a light guide layer 26, and a p-type GaN layer 27 in this order from the growth substrate 21 side. ing. A p-side electrode 28 is formed on the p-type GaN layer 27 and an n-side electrode 29 is formed on the n-type GaN layer 24.

  The buffer layer 23 is formed on the growth substrate 21 and is made of, for example, AlN. The buffer layer 23 may be made of GaN. The n-type GaN layer 24 as the first conductivity type layer is formed on the buffer layer 23 and is made of n-GaN. The active layer 25 as a light emitting layer is formed on the n-type GaN layer 24 and is made of GalnN, and emits blue light by injecting electrons and holes. The active layer 25 can also have a multiple quantum well structure. Here, blue light refers to light having a peak wavelength of 430 nm or more and 480 nm or less, for example. In the present embodiment, the peak wavelength of light emission of the active layer 25 is 450 nm.

  The light guide layer 26 is formed on the active layer 25 and is made of p-AIGaN. The p-type GaN layer 27 as the second conductivity type layer is formed on the light guide layer 26 and is made of p-GaN. The n-type GaN layer 24 to the p-type GaN layer 27 are formed by epitaxial growth of a group III nitride semiconductor. Here, the thickness of each layer is, for example, 40 nm for the buffer layer 23, 5 μm for the n-type GaN layer 24, 2.5 nm for the active layer 25, 20 nm for the light guide layer 26, and 200 nm for the p-type GaN layer 27. The thickness of the light emitting unit 22 can be set to 5262.5 nm. In addition, when a voltage is applied to the first conductive type layer and the second conductive type layer at least including the first conductive type layer, the active layer, and the second conductive type layer, the active layer is formed by recombination of electrons and holes. The layer structure of the semiconductor layer is arbitrary as long as it emits light.

  The p-side electrode 28 is formed on the p-type GaN layer 27 and is made of a material such as Au. In the present embodiment, the p-side electrode 28 is formed by a vacuum deposition method, a sputtering method, a CVD (Chemical Vapor Deposition) method, or the like. The n-side electrode 29 is formed on the exposed n-type GaN layer 24 by etching the n-type GaN layer 24 from the p-type GaN layer 27. The n-side electrode 29 is made of, for example, W / Al / Au, and is formed by a vacuum deposition method, a sputtering method, a CVD (Chemical Vapor Deposition) method, or the like.

Hereinafter, a method for manufacturing the light emitting device will be described with reference to FIGS.
The manufacturing method of the light emitting device according to the present embodiment includes a plurality of independent flip chip types each having a growth substrate 21, a semiconductor light emitting unit 22 on the growth substrate 21, and electrodes 28 and 29 on the semiconductor light emitting unit 22. A light-emitting diode element 20 selected from the light-emitting diode elements 20 satisfying the desired performance, and a plurality of light-emitting diode elements 20 selected in the selection process are bonded to another substrate of the growth substrate 21. The light emitting diode element 20 includes a mounting process in which each light emitting diode element 20 is directly mounted on the package substrate body 10 and the light emitting diode elements 20 are directly mounted on the package substrate body 10. The laser is uniformly irradiated to the entire element for each light emitting diode element 20 without scanning a laser having a large spot diameter. A peeling step of peeling the entire portion of the substrate 21, the remains of the growth substrate 21 on the package substrate main body 10 includes a, a retreat step to dismiss collectively by blowing gas.

FIG. 4 is an explanatory diagram for forming the semiconductor light emitting unit on the package substrate body, and shows a state in which the light emitting element is set above the mounting position of the package substrate body.
First, the light emitting diode elements 20 that are suitable for use in the package substrate 50 and satisfy the desired performance are selected. Here, the intended performance means whether or not the light emitting diode element 20 is lit when energized if the variation in the quality of the package substrate 50 to be manufactured is not a problem. If there is a problem of variation in the above, it means whether the forward voltage, light quantity, color tone, etc. of the light emitting diode element 20 are within a predetermined design range. That is, at least defective LED elements 20 that do not light up are removed at this stage.
Further, as shown in FIG. 4, a solder 32 made of Au—Sn is vapor-deposited in advance on the connection portion of the package substrate body 10 with the light emitting diode element 20. A material other than Au—Sn can also be used as the solder 32.

FIG. 5 is an explanatory diagram of forming the semiconductor light emitting unit on the package substrate body, and shows a state in which the light emitting element is mounted on the package substrate body.
Next, as shown in FIG. 5, the p-side electrode 28 and the n-side electrode 29 are bonded to the solder 32 in a predetermined atmosphere under a predetermined temperature condition and a predetermined load condition. The predetermined atmosphere may be, for example, an inert atmosphere such as nitrogen in addition to a forming gas in which nitrogen and hydrogen are mixed. For example, as the forming gas, one having 5% hydrogen and 95% nitrogen can be used. Moreover, the load applied to the light emitting diode element 20 is set to 5 g weight or more and 50 g weight or less, for example. The temperature condition is arbitrary, but in order to melt the solder 32, it is necessary to heat to a temperature equal to or higher than the eutectic temperature or melting point of the material constituting the solder 32 (for example, a temperature of 250 ° C. or higher and 400 ° C. or lower). . For example, when the solder 32 is an Au—Sn solder of 80% Au and 20% Sn, it is necessary to heat the eutectic temperature to about 280 ° C. or more. Further, when the solder 32 is made of, for example, SnAgCu, the melting point of SnAgCu is about 220 ° C., so it is necessary to heat to at least about 220 ° C. or more. Thus, the light emitting diode element 20 is fixed to the package substrate body 10 by melting and solidifying the solder 32.

FIG. 6 is an explanatory diagram for forming the semiconductor light emitting unit on the package substrate body, and shows a state in which a laser is irradiated on the growth substrate of the light emitting element.
Next, as shown in FIG. 6, the light emitting diode element 20 is irradiated with a laser beam from above the package substrate body 10. The spot diameter of the laser beam is formed larger than the planar view area of the light emitting diode element 20, and the entire light emitting diode element 20 can be irradiated without scanning the laser beam. Here, since the laser beam has a light intensity distribution in the radial direction of the spot, the energy of the beam applied to the light emitting diode element 20 can be made more uniform as it is larger than the light emitting diode element 20. Since the light emitting diode element 20 is a flip chip type, the growth substrate 21 is located on the upper side, the energy of the laser beam is applied to the interface between the growth substrate 21 and the semiconductor light emitting unit 22, and the growth substrate 21 is the semiconductor light emitting unit. Separate from 22.

  Here, the position of the light emitting diode element 20 is determined by being recognized and arranged by a CCD camera. This is possible because each LED element 20 is mounted, and cannot be recognized by the CCD camera when the semiconductor light emitting unit 22 is connected by a wafer-like substrate or submount. If a scribe line is formed on a wafer so that it can be recognized by a CCD camera, the growth substrate is cracked or distorted. Further, in the present embodiment, since it is not necessary to consider the warpage of the wafer as in the case of irradiating the laser beam in the state of the wafer, the focus of the laser beam is accurately set at the interface between the growth substrate 21 and the semiconductor light emitting unit 22. Can be adapted to

Here, a laser irradiation method will be described with reference to FIG. FIG. 7 is a schematic explanatory diagram of a laser irradiation apparatus.
As shown in FIG. 7, a laser irradiation apparatus 100 is a laser oscillator 110 that oscillates a laser beam, a mirror 120 that changes the direction of the oscillated laser beam, an optical lens 130 that focuses the laser beam, and a laser beam irradiation target. A stage 140 for supporting the work object, that is, the package substrate main body 10 is provided. Further, the laser irradiation apparatus 100 may include a housing 150 that maintains the path of the laser beam in a vacuum state.

  The laser oscillator 110 can be an excimer laser such as KrF or ArF. The beam emitted from the laser oscillator 110 is reflected by the mirror 120 and its direction is changed. A plurality of mirrors 120 are provided to change the direction of the laser beam. The optical lens 130 is positioned above the stage 140 and focuses the laser beam incident on the package substrate body 10.

  The stage 140 is moved in the x direction and / or the y direction by a moving means (not shown), and the package substrate body 10 placed thereon is moved. The laser beam is irradiated through the growth substrate 21 and is mainly absorbed at the interface between the growth substrate 21 and the semiconductor light emitting unit 22. The laser beam is irradiated with a spot diameter larger than that of the light emitting diode element 20 in a plan view. Here, the spot diameter can be set to, for example, 1 mm or more and 10 mm or less.

FIG. 8 is an explanatory diagram of forming the semiconductor light emitting unit on the package substrate body, and shows a state in which the growth substrate of the light emitting element is removed.
By peeling off the entire portion of the growth substrate 21 with the laser irradiation apparatus, only the semiconductor light emitting portion 22 can be left on the package substrate body 10 in a state of being electrically connected to the circuit pattern 11 as shown in FIG. it can. Note that the debris of the growth substrate 21 that has been peeled off can be removed from the package substrate body 10 by blowing gas onto the package substrate body 10. That is, after all the growth substrates 21 are peeled off, the remnants of each growth substrate 21 may be removed together.

9A and 9B are cross-sectional views of the package substrate, in which FIG. 9A shows an embodiment of the present invention, and FIG. 9B shows a conventional one.
Next, as shown in FIG. 9A, the semiconductor light emitting unit 22 on the package substrate body 10 is sealed with a sealing resin 40 to complete the package substrate 50. The sealing resin 40 can be a transparent resin such as epoxy or silicone. Further, the sealing resin 40 contains a phosphor 41 that emits yellow light when excited by blue light emitted from each semiconductor light emitting unit 22. As the phosphor 41 that emits yellow light, YAG (Yttrium Aluminum Garnet), silicate, or the like can be used.

  The completed package substrate 50 is attached to the support portion 5 and connected to the terminal portion 4 and the internal conductor 6. Thereafter, the light emitting device 1 is completed by assembling the housing 2 to the terminal portion 4.

  As described above, according to the method for manufacturing the light emitting device 1 of the present embodiment, in the mounting process, the plurality of light emitting diode elements 20 are flip-chip mounted on the package substrate body 10, and each light emitting diode element 20 is mounted on the package substrate. It is electrically connected to the main body 10. Next, the growth substrate 21 is peeled off in the peeling step, and the semiconductor light emitting unit 22 remains on the package substrate body 10. Conventionally, only the semiconductor light emitting unit 22 could not be disposed on the package substrate body 10 unless the semiconductor layer is thick enough to handle the semiconductor layer (for example, 50 μm), but the growth substrate 21 on the package substrate body 10 cannot be disposed. With the lift-off, the semiconductor light emitting unit 22 can be formed on the package substrate body 10. As a result, a thin semiconductor light emitting unit 22 having a thickness of, for example, 10 μm or less can be formed on the package substrate body 10.

  As described above, since only the semiconductor light emitting unit 22 remains on the package substrate main body 10, the optical and thermal performances are not deteriorated due to the growth substrate 21. In addition, since the growth substrate 21 is removed after the light emitting diode element 20 is mounted, the thin substrate shown in FIG. 9A is clear as compared with the conventional package substrate 250 shown in FIG. The semiconductor light emitting unit 22 can be formed on the package substrate body 10.

  Further, the light emitting diode element 20 that satisfies the desired performance in the sorting step can be sorted and used, and the yield can be improved. That is, there is no possibility that an element having an initial failure is included unlike a conventional device in which a plurality of semiconductor element structures are formed on a growth substrate and pasted to a submount or an AlN substrate all at once. Further, it is not necessary to attach the support substrate or the like to another substrate, and it is not necessary to peel the support substrate or the like on the package substrate.

  Further, at the time of lift-off, it is only necessary to irradiate each separated light emitting diode element 20 with a laser. Conventionally, the entire wafer is line-scanned in a state where the elements are not separated or a laser is irradiated to each scribe line region corresponding to the element. Compared with this method, it is possible to suppress the occurrence of distribution in the peeling of the growth substrate 21, and this can also improve the yield. In particular, in this embodiment, since the growth substrate 21 is removed by a laser having a spot diameter larger than that of the light emitting diode element 20, each light emitting diode 20 can be irradiated with a beam uniformly. It is possible to accurately suppress the occurrence of distribution in the separation, and it is possible to reliably improve the yield. Normally, laser lift-off is performed in units of wafers in which a plurality of light-emitting diode elements are adjacent to each other. Even if an attempt is made to irradiate a laser in element units, the adjacent light-emitting diode elements are also affected. I can't do it. However, as in this embodiment, once each light emitting diode element is cut out from the wafer, laser irradiation can be performed in a completely independent state for each light emitting diode element.

  Further, according to the light emitting device 1 of the present embodiment, since the growth substrate 21 does not exist on the semiconductor light emitting unit 22, the semiconductor light emitting unit 22 can be made thin, and the heat generated from the semiconductor light emitting unit 22 is generated by the package substrate. It can be quickly diffused to the main body 10 side. That is, heat transfer from the semiconductor light emitting unit 22 to the sealing resin 40 and the phosphor 41 through the growth substrate 21 can be reduced, and deterioration of the sealing resin 40 and the phosphor 41 can be suppressed.

  Further, since the growth substrate 21 does not exist, light is not reflected at the interface between the semiconductor light emitting unit 22 and the growth substrate 21, and the light extraction efficiency from the semiconductor light emitting unit 22 is improved. When the light emitting device 1 of the present embodiment was actually manufactured, the light emission efficiency could be improved by about 10 to 30% as compared with the case having the growth substrate 21.

  In the above embodiment, the laser is applied to the interface between the semiconductor light emitting unit 22 and the growth substrate 21 to remove the growth substrate 21. However, for example, the growth substrate 21 may be removed by etching. Good. In this case, the growth substrate 21 can be removed by etching the growth substrate 21 itself or by etching a sacrificial layer formed between the growth substrate 21 and the active layer 25. In the case of the light emitting diode element 20 of the above embodiment, the growth substrate 21 can be separated by etching using the buffer layer 23 as a sacrificial layer. As shown in FIG. 10, the buffer layer 23 is gradually chemically etched inward from the exposed side surface.

  The etching solution is appropriately selected according to the constituent material of the buffer layer 23 to be etched. For example, when the buffer layer 23 is made of AlN, a potassium hydroxide (KOH) solution, a sodium hydroxide (NaOH) solution Etc. can be used. In addition, when a potassium hydroxide (KOH) solution and a sodium hydroxide (NaOH) solution are used as an etching solution, even if the concentration is 5 to 99 vol% diluted with pure water, The concentration may be 100 vol%.

  As the etching processing conditions, the etching processing temperature is from room temperature (25 ° C.) to 50 ° C., and the etching processing time depends on the constituent material and thickness of the buffer layer 23 and the type and concentration of the etching solution. When the buffer layer 23 is made of AlN, has a thickness of 20 nm, and a 100% concentration potassium hydroxide solution is used as an etching solution, the time is, for example, 5 to 20 seconds. Thereby, as shown in FIG. 11, the semiconductor light emitting unit 122 from which the buffer layer 23 and the growth substrate 21 are removed can be formed on the package substrate body 10.

  Moreover, in the said embodiment, although the thing using sapphire was shown as the growth board | substrate 21, it cannot be overemphasized that another material may be used and the specific structure of the light-emitting device 1 can also be changed suitably. Of course.

  While the embodiments of the present invention have been described above, the embodiments described above do not limit the invention according to the claims. In addition, it should be noted that not all the combinations of features described in the embodiments are essential to the means for solving the problems of the invention.

DESCRIPTION OF SYMBOLS 1 Light-emitting device 2 Case 4 Terminal part 5 Support part 6 Internal conductor 10 Package substrate main body 11 Circuit pattern 20 Light emitting element 21 Growth substrate 22 Semiconductor light emitting part 23 Buffer layer 24 n-type GaN layer 25 Active layer 26 Light guide layer 27 p-type GaN layer 28 p-side electrode 29 n-side electrode 32 solder 40 sealing resin 41 phosphor 50 package substrate 100 laser irradiation device 110 laser oscillator 120 mirror 122 semiconductor light emitting unit 130 optical lens 140 stage 150 housing 250 conventional package substrate

Claims (6)

A method of manufacturing a light-emitting device including a chip-on-board type package substrate having a plurality of light-emitting diode light-emitting portions,
A light emitting diode element satisfying a desired performance is obtained from a plurality of independent flip-chip light emitting diode elements each having a growth substrate, a semiconductor light emitting unit on the growth substrate, and an electrode on the semiconductor light emitting unit. A sorting process for sorting;
A plurality of light emitting diode elements selected in the selection step, without being bonded to the other substrate of the growth substrate, and mounted directly on the package substrate body for each of the light emitting diode elements; and
In a state where each light emitting diode element is directly mounted on the package substrate body, the laser is uniformly distributed over the entire element for each light emitting diode element without scanning a laser having a spot diameter larger than that of the light emitting diode element. And a peeling step of peeling all the growth substrate, and a method for manufacturing a light emitting device having a chip-on-board type package substrate.   2. The light emitting device having a chip-on-board type package substrate according to claim 1, further comprising a removal step in which, after the peeling step, the remnants of the growth substrate on the package substrate body are collectively removed by blowing a gas. Manufacturing method.   3. The light emitting device having a chip-on-board type package substrate according to claim 2, wherein the position of each light emitting diode element on the package substrate main body is determined by being recognized and arranged by a CCD camera in the mounting step. Device manufacturing method.   4. The method of manufacturing a light emitting device having a chip-on-board type package substrate according to claim 3, wherein the semiconductor light emitting portion remaining after the growth substrate is removed on the package substrate main body is 10 μm or less.   The method of manufacturing a light emitting device having a chip-on-board type package substrate according to claim 4, wherein the growth substrate is a sapphire substrate.   Each of the light emitting diode elements is directly mounted on the package substrate body, aligned in the vertical and horizontal directions on the package substrate body, and electrically connected in series and parallel to each other by a circuit pattern on the package substrate body. A method for manufacturing a light emitting device having the chip-on-board type package substrate according to claim 5.

Images