JPS636849A - Wire bonding - Google Patents
Wire bondingInfo
- Publication number
- JPS636849A JPS636849A JP61150435A JP15043586A JPS636849A JP S636849 A JPS636849 A JP S636849A JP 61150435 A JP61150435 A JP 61150435A JP 15043586 A JP15043586 A JP 15043586A JP S636849 A JPS636849 A JP S636849A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- wire
- section
- bent
- tool
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims abstract description 8
- 241000587161 Gomphocarpus Species 0.000 claims abstract description 5
- 238000005452 bending Methods 0.000 claims description 8
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000008188 pellet Substances 0.000 description 5
- 230000000630 rising effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48095—Kinked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
- H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
[発明の目的]
(産業上の利用分野)
この発明は第1のボンディング部と第2のボンディング
部との間にボンディングされるワイヤのループの立上が
り高さを低くするためのワイヤボンディング方法に関す
る。[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) This invention reduces the rising height of a wire loop bonded between a first bonding part and a second bonding part. The present invention relates to a wire bonding method.
(従来の技術)
たとえば、半導体素子に設けられたN極と、リードフレ
ームに設けられた端子とを電気的に導通させる場合、こ
れら両者をワイヤで接続する、いわゆるワイヤボンディ
ングが知られている。ワイヤボンディングは、周知のよ
うに超音波撮動が与えられるボンディングツールを上下
方向に駆動するとともに、上記ボンディングツールが取
付けられたボンディングヘッドをWi置したテーブルを
X、Y方向に駆動することによって上記電極と端子間を
ワイヤでボンディングするようにしている。(Prior Art) For example, so-called wire bonding is known in which when an N pole provided on a semiconductor element and a terminal provided on a lead frame are electrically connected to each other, the two are connected with a wire. As is well known, wire bonding is performed by driving a bonding tool to which ultrasonic imaging is applied in the vertical direction and driving a table on which a bonding head to which the bonding tool is attached is placed in the X and Y directions. The electrodes and terminals are bonded using wires.
つまり、上記ボンディングツールを下降させて第1のボ
ンディング部である半導体素子の111にワイヤをボン
ディングしたならば、上記ボンディングツールを上昇さ
せるとともにテーブルを駆動して上記ボンディングツー
ルを第2のボンディング部であるリードフレームの端子
の上方に位置させる。しかるのち、上記ボンディングツ
ールを下降させて上記リードフレームの端子に上記ワイ
ヤをボンディングするようにしている。That is, once the bonding tool is lowered to bond the wire to the semiconductor element 111 which is the first bonding part, the bonding tool is raised and the table is driven to move the bonding tool to the second bonding part. Position it above the terminal of a certain lead frame. Thereafter, the bonding tool is lowered to bond the wire to the terminal of the lead frame.
ところで、このようなネイルヘッドボンディングにおい
て、従来は第2のボンディング部であるリードフレーム
の端子にワイヤをボンディングする際、ボンディングツ
ールを単に下降させるだけであった。そのため、第1の
ボンディング部と第2のボンディング部とにボンディン
グされたワイヤは滑らかな曲線のループ状をなし、その
立ち上がり高さは、通常200〜300−と非常に高い
状態にあるので、その半導体装置をたとえば薄いICカ
ードなどに用いる場合、上記ループの立上がり高さを1
50譚程度に押し潰さなければならなかった。そして、
上記ワイヤのループを押し潰す作業は、ワイヤボンディ
ング工程の後に別工程として行なわなければならなかっ
たので、生産性の低下を招いたり、ワイヤループを良好
に押し潰すごとができずに不良品の発生を招くなどのこ
とがあった。By the way, in such nail head bonding, conventionally, when bonding the wire to the terminal of the lead frame, which is the second bonding part, the bonding tool was simply lowered. Therefore, the wire bonded to the first bonding part and the second bonding part has a smooth curved loop shape, and its rising height is usually very high, 200 to 300 mm. When the semiconductor device is used in a thin IC card, for example, the rising height of the loop is set to 1.
I had to squeeze it down to about 50 stories. and,
The work of crushing the wire loops mentioned above had to be done as a separate process after the wire bonding process, which resulted in a drop in productivity and resulted in defective products because the wire loops could not be crushed properly. There were times when people were invited.
〈発明が解決しようとする問題点)
この発明は、ワイヤを第1のボンディング部にボンディ
ングしたのち、第2のボンディング部にボンディングす
るときに、そのループの高さを十分に低くすることがで
きるようにしたワイヤボンディング方法を提供すること
を目的とする。(Problems to be Solved by the Invention) This invention makes it possible to make the height of the loop sufficiently low when bonding the wire to the first bonding part and then to the second bonding part. It is an object of the present invention to provide a wire bonding method.
[発明の構成]
(問題点を解決するための手段及び作用)この発明は、
第1のボンディング部と第2のボンディング部とをネイ
ルヘッドボンディングするときに、ワイヤを第1のボン
ディング部にボンディングしたのち、第2のボンディン
グ部にボンディングする前に、ボンディングツールを第
2のボンディング部から離れる方向へ移動させながら所
定寸法上昇させたのち、さらに上記第2のボンディング
部の方向に移動させながら上昇させて上記ワイヤに第1
の屈曲部およびこの第1の屈曲部よりも上方に位置する
第2の屈曲部とを形成してから、上記ワイヤを上記第1
の屈曲部の箇所から上記第2のボンディング部の方向へ
屈曲させて上記第2のボンディング部にボンディングす
る。そして、ワイヤの上記第1の屈曲部と第2の屈曲部
との間をほぼ水平にすることにより、そのワイヤのルー
プの高さを十分に低くするようにした。[Structure of the invention] (Means and effects for solving the problem) This invention has the following features:
When performing nail head bonding between the first bonding part and the second bonding part, after bonding the wire to the first bonding part and before bonding to the second bonding part, the bonding tool is connected to the second bonding part. After raising the wire by a predetermined dimension while moving it away from the bonding part, the wire is further raised while moving it in the direction of the second bonding part, and the first bonding part is attached to the wire.
and a second bent portion located above the first bent portion, and then the wire is connected to the first bent portion.
It is bent from the bending part in the direction of the second bonding part and bonded to the second bonding part. By making the distance between the first bent portion and the second bent portion of the wire substantially horizontal, the height of the loop of the wire is made sufficiently low.
(実施例) 以下、この発明の一実施例を図面を参照して説明する。(Example) An embodiment of the present invention will be described below with reference to the drawings.
第1図(a)〜(1)はこの発明に係わるネイルヘッド
ボンディングを順次示した説明図で、第1図(a)にお
いてワイヤガイド1にガイドされたワイヤ2は上クラン
プ3と下クランプ4とを介してボンディングツール5に
通されその下クランプ4から突出した端部にはボール6
が形成されている。そして、上記ボンディングツール5
は第1のボンディング部であるリードフレーム7に取着
されたベレット8の上方に位置している。1(a) to 1(1) are explanatory diagrams sequentially showing nail head bonding according to the present invention. In FIG. 1(a), the wire 2 guided by the wire guide 1 is connected to the upper clamp 3 and the lower clamp 4. The end of the bonding tool 5 that protrudes from the lower clamp 4 is provided with a ball 6.
is formed. And the above bonding tool 5
is located above the pellet 8 attached to the lead frame 7, which is the first bonding part.
この状態から第1図(b)に示すように下クランプ4が
開いてボンディングツール5が下降し、ワイヤ2を繰り
出す。このとき、ワイヤ2は上クランプ3に対してスリ
ップしながら繰り出されるので、上クランプ3とボンデ
ィングツール5との門においてワイヤ2にたるみが生じ
るようなことがない。From this state, as shown in FIG. 1(b), the lower clamp 4 opens, the bonding tool 5 descends, and the wire 2 is fed out. At this time, the wire 2 is fed out while slipping with respect to the upper clamp 3, so that the wire 2 does not become slack at the gate between the upper clamp 3 and the bonding tool 5.
つぎに、第1図(C)に示すように上クランプ3が開い
てボンディングツール5がざらに下降し、ワイヤ2の下
端に形成されたボール6が上記ベレット8にボンディン
グされる。Next, as shown in FIG. 1C, the upper clamp 3 is opened and the bonding tool 5 is lowered roughly, so that the ball 6 formed at the lower end of the wire 2 is bonded to the pellet 8.
このようにしてベレット8へのボンディングが終了する
と、第1図(d)に示すようにボンディングツール5が
第2のボンディング部である上記リードフレーム7の端
子9から離れる一X方向へ移動しながら所定寸法上昇し
、ついで第1図(e)に示すように上記ベレット8の上
方へ戻る+X方向へ移動しながら上昇して所定位置で停
止する。When the bonding to the pellet 8 is completed in this way, the bonding tool 5 moves in the 1X direction away from the terminal 9 of the lead frame 7, which is the second bonding part, as shown in FIG. 1(d). It rises by a predetermined distance, then returns above the above-mentioned bullet 8 while moving in the +X direction as shown in FIG. 1(e), and then stops at a predetermined position.
したがって、上記ワイヤ2にはベレット8との固着部分
に第1の屈曲部11が形成され、ボンディングツール5
が−X方向から+X方向へ方向変換した箇所と対応する
部分には第2の屈曲部12が形成される。Therefore, the first bent portion 11 is formed in the wire 2 at the portion where it is fixed to the pellet 8, and the bonding tool 5
A second bent portion 12 is formed at a portion corresponding to a location where the direction is changed from the −X direction to the +X direction.
このようにしてワイヤ2に第1、第2の屈曲部11.1
2が形成されると、ボンディングツール5が第1図(f
)に示すように下降しながら+X方向へ移動する。そし
て、ポンプイングツ〜ル5が上記リードフレーム7の端
子9の上方に位置したならば、第1図(g)に示すよう
に下降して、上記ワイヤ2を端子9にボンディングする
。このとき、上記ワイヤ2がなすループは、第2図に示
すように第1の屈曲部11と第2の屈曲部12とで屈曲
し、これら屈曲部11.12の間の部分はリードフレー
ム7の板面に対してほぼ平行になっている。したがって
、ワイヤ2が円弧状に曲成されている場合に比べてその
ループの高さhを十分に低くできるばかりか、そのワイ
ヤ2がベレット8の角部8aに当たるようなこともない
。In this way, the wire 2 is provided with the first and second bent portions 11.1.
2 is formed, the bonding tool 5 moves as shown in FIG.
), it moves in the +X direction while descending. Once the pumping tool 5 is located above the terminal 9 of the lead frame 7, it is lowered as shown in FIG. 1(g) to bond the wire 2 to the terminal 9. At this time, the loop formed by the wire 2 is bent at the first bending part 11 and the second bending part 12, as shown in FIG. almost parallel to the plate surface. Therefore, the height h of the loop can be made sufficiently lower than when the wire 2 is bent into an arc shape, and the wire 2 does not hit the corner 8a of the pellet 8.
上記端子9ヘワイヤ2をボンディングし終わると、第1
図(h)に示すように下クランプ4が閉じ、この下クラ
ンプ4とともにボンディングツール5が上昇し、ワイヤ
2が上記端子9の箇所で切断される。ついで、第1図(
i)に示すようにボンディングツール5から突出したワ
イヤ2の端部にトーチ13によってボール6が形成され
ることによって第1図(a>の状態となり、再び上述し
た工程が繰返される。After bonding the wire 2 to the terminal 9, the first
As shown in Figure (h), the lower clamp 4 is closed, the bonding tool 5 is raised together with the lower clamp 4, and the wire 2 is cut at the terminal 9. Next, Figure 1 (
As shown in i), a ball 6 is formed by the torch 13 at the end of the wire 2 protruding from the bonding tool 5, resulting in the state shown in FIG. 1(a), and the above-described steps are repeated again.
[発明の効果]
以上述べたようにこの発明は、ワイヤを第1のボンディ
ング部にボンディングしてから、このワイヤに第1の屈
曲部と第2の屈曲部とを形成したのち、上記ワイヤを上
記第1の屈曲部の箇所から屈曲させて第2のボンディン
グ部にボンディングするようにした。したがって、ワイ
ヤの第1の屈曲部と第2の屈曲部との間の部分をほぼ水
平にすることができるので、ワイヤのループの高さを十
分に低くすることができるばかりか、ループを押し潰す
従来のように接触不良の発生を招くようなことがないな
どの利点を有する。[Effects of the Invention] As described above, in the present invention, after a wire is bonded to a first bonding portion, a first bent portion and a second bent portion are formed on this wire, and then the wire is bonded to a first bonding portion. It was bent from the first bent part and bonded to the second bonding part. Therefore, since the portion between the first bending part and the second bending part of the wire can be made almost horizontal, the height of the loop of the wire can not only be made sufficiently low, but also the height of the loop can be pushed down. It has the advantage of not causing poor contact unlike the conventional method of crushing.
図面はこの発明の一実施例を示し、第1図(a)〜(i
)はボンディング工程を順次示す説明図、第2図はワイ
ヤが第1のボンディング部と第2のボンディング部とに
ボンディングされた状態を拡大した側面図である。
2・・・ワイヤ、5・・・ボンディングツール8・・・
ベレット(第1のボンディング部)、9・・・端子(第
2のボンディング部)、11・・・第1の屈曲部、12
・・・第2の屈曲部。
出願人代理人 弁理士 鈴江武彦
第2図The drawings show an embodiment of the present invention, and FIGS. 1(a) to (i)
) are explanatory diagrams sequentially showing the bonding process, and FIG. 2 is an enlarged side view showing a state in which the wire is bonded to the first bonding part and the second bonding part. 2... Wire, 5... Bonding tool 8...
Bellet (first bonding part), 9... terminal (second bonding part), 11... first bending part, 12
...Second bent part. Applicant's agent Patent attorney Takehiko Suzue Figure 2
Claims (1)
ルヘッドボンディングするワイヤボンディング方法にお
いて、ワイヤを第1のボンディング部にボンディングし
たのち、第2のボンディング部にボンディングする前に
、ボンディングツールを第2のボンディング部から離れ
る方向へ移動させながら所定寸法上昇させたのち、さら
に上記第2のボンディング部の方向に移動させながら上
昇させて上記ワイヤに第1の屈曲部およびこの第1の屈
曲部よりも上方に位置する第2の屈曲部とを形成してか
ら、上記ワイヤを上記第1の屈曲部の箇所から上記第2
のボンディング部の方向へ屈曲させて上記第2のボンデ
ィング部にボンディングすることを特徴とするワイヤボ
ンディング方法。In a wire bonding method of performing nail head bonding between a first bonding part and a second bonding part, after bonding the wire to the first bonding part and before bonding to the second bonding part, a bonding tool is attached to the second bonding part. After raising the wire by a predetermined dimension while moving it in a direction away from the bonding part, the wire is further raised while moving in the direction of the second bonding part, so that the wire has a first bending part and a height higher than the first bending part. and a second bent portion located above, and then the wire is passed from the first bent portion to the second bent portion.
A wire bonding method characterized in that the wire is bent in the direction of the bonding portion and bonded to the second bonding portion.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61150435A JPH0738398B2 (en) | 1986-06-26 | 1986-06-26 | Wire bonding method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61150435A JPH0738398B2 (en) | 1986-06-26 | 1986-06-26 | Wire bonding method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS636849A true JPS636849A (en) | 1988-01-12 |
JPH0738398B2 JPH0738398B2 (en) | 1995-04-26 |
Family
ID=15496866
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61150435A Expired - Lifetime JPH0738398B2 (en) | 1986-06-26 | 1986-06-26 | Wire bonding method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0738398B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02310937A (en) * | 1989-05-26 | 1990-12-26 | Marine Instr Co Ltd | Wire bonding |
-
1986
- 1986-06-26 JP JP61150435A patent/JPH0738398B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02310937A (en) * | 1989-05-26 | 1990-12-26 | Marine Instr Co Ltd | Wire bonding |
Also Published As
Publication number | Publication date |
---|---|
JPH0738398B2 (en) | 1995-04-26 |
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