JPS6351436U - - Google Patents
Info
- Publication number
- JPS6351436U JPS6351436U JP14560586U JP14560586U JPS6351436U JP S6351436 U JPS6351436 U JP S6351436U JP 14560586 U JP14560586 U JP 14560586U JP 14560586 U JP14560586 U JP 14560586U JP S6351436 U JPS6351436 U JP S6351436U
- Authority
- JP
- Japan
- Prior art keywords
- heating
- manufacturing apparatus
- etching rate
- wafer
- semiconductor manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000001312 dry etching Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Description
第１図は本考案の実施例であるバレル一枚形ド
ライエツチング装置の断面図であり、第２図は従
来技術のバレル一枚形ドライエツチング装置の断
面図、第３図は従来技術の平行平板形装置の概略
図である。
５……ガス導入孔、６……内部電極、７……外
部電極、９ａ……高温用加熱手段、９ｂ……低温
用加熱手段、１０……ウエーハ。
FIG. 1 is a cross-sectional view of a single-barrel dry etching device according to an embodiment of the present invention, FIG. 2 is a cross-sectional view of a conventional single-barrel dry etching device, and FIG. 3 is a parallel view of a conventional dry etching device. FIG. 2 is a schematic diagram of a flat plate device. 5...Gas introduction hole, 6...Internal electrode, 7...External electrode, 9a...Heating means for high temperature, 9b...Heating means for low temperature, 10...Wafer.
Claims (1)
極間の放電によりイオン化したガスにて上記ウエ
ーハをドライエツチングする半導体製造装置にお
いて、 上記半導体ウエーハのエツチングレートが大き
くなる部分は相対的に低温に、且つ、エツチング
レートが小さくなる部分は相対的に高温にする加
熱手段を付設したことを特徴とする半導体製造装
置。[Scope of Claim for Utility Model Registration] In a semiconductor manufacturing apparatus in which a semiconductor wafer is placed near a discharge electrode and the wafer is dry-etched using gas ionized by the discharge between the electrodes, a portion where the etching rate of the semiconductor wafer becomes large. 1. A semiconductor manufacturing apparatus characterized in that a heating means is provided for heating a portion at a relatively low temperature and heating a portion where the etching rate is small to a relatively high temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14560586U JPS6351436U (en) | 1986-09-22 | 1986-09-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14560586U JPS6351436U (en) | 1986-09-22 | 1986-09-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6351436U true JPS6351436U (en) | 1988-04-07 |
Family
ID=31057300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14560586U Pending JPS6351436U (en) | 1986-09-22 | 1986-09-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6351436U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016225521A (en) * | 2015-06-02 | 2016-12-28 | 東京エレクトロン株式会社 | Substrate processing device and substrate processing method |
-
1986
- 1986-09-22 JP JP14560586U patent/JPS6351436U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016225521A (en) * | 2015-06-02 | 2016-12-28 | 東京エレクトロン株式会社 | Substrate processing device and substrate processing method |