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JPS6331591A - Treatment of photoresist waste liquid - Google Patents

Treatment of photoresist waste liquid

Info

Publication number
JPS6331591A
JPS6331591A JP61171894A JP17189486A JPS6331591A JP S6331591 A JPS6331591 A JP S6331591A JP 61171894 A JP61171894 A JP 61171894A JP 17189486 A JP17189486 A JP 17189486A JP S6331591 A JPS6331591 A JP S6331591A
Authority
JP
Japan
Prior art keywords
waste
solution
waste liquid
liquid
ultrafiltration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61171894A
Other languages
Japanese (ja)
Other versions
JPH0615078B2 (en
Inventor
Kohei Miki
康平 三木
Hiroshi Saito
博 斎藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Heavy Industries Ltd
Original Assignee
Sumitomo Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Heavy Industries Ltd filed Critical Sumitomo Heavy Industries Ltd
Priority to JP17189486A priority Critical patent/JPH0615078B2/en
Priority to US07/076,372 priority patent/US4786417A/en
Priority to KR1019870007965A priority patent/KR950014323B1/en
Priority to DE8787306477T priority patent/DE3782205T2/en
Priority to AT87306477T priority patent/ATE81476T1/en
Priority to EP87306477A priority patent/EP0254550B1/en
Priority to CN87105308A priority patent/CN1010555B/en
Publication of JPS6331591A publication Critical patent/JPS6331591A/en
Publication of JPH0615078B2 publication Critical patent/JPH0615078B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/3092Recovery of material; Waste processing
    • CCHEMISTRY; METALLURGY
    • C02TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02FTREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00Treatment of water, waste water, or sewage
    • C02F1/02Treatment of water, waste water, or sewage by heating
    • CCHEMISTRY; METALLURGY
    • C02TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02FTREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00Treatment of water, waste water, or sewage
    • C02F1/44Treatment of water, waste water, or sewage by dialysis, osmosis or reverse osmosis
    • C02F1/444Treatment of water, waste water, or sewage by dialysis, osmosis or reverse osmosis by ultrafiltration or microfiltration
    • CCHEMISTRY; METALLURGY
    • C02TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02FTREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2103/00Nature of the water, waste water, sewage or sludge to be treated
    • C02F2103/34Nature of the water, waste water, sewage or sludge to be treated from industrial activities not provided for in groups C02F2103/12 - C02F2103/32
    • C02F2103/40Nature of the water, waste water, sewage or sludge to be treated from industrial activities not provided for in groups C02F2103/12 - C02F2103/32 from the manufacture or use of photosensitive materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Hydrology & Water Resources (AREA)
  • Water Supply & Treatment (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)

Abstract

PURPOSE:To attain repeated utilization, by separately subjecting a waste developing solution and a release waste solution to ultrafiltration and reutilizing both transmitted solutions. CONSTITUTION:A waste developing solution and a release waste solution are separately subjected t ultrafiltration and concentrates flowing out are mixed to be treated. The photoresist components dissolved in an aqueous alkali solution are insolubilized with the reduction of the OH<-> ion in water. Subsequently, dehydration treatment is performed to remove dehydrated sludge and the liquid component is filtered. In a final process, treatments such as reverse osmosis, decomposition by ultraviolet rays, adsorption by activated carbon, biological treatment or the like are performed. An ultrafiltration membrane pref. has fractionation MW of 5,000-10,000. By this method, the treatment cost of both waste solutions can be markedly reduced.

Description

【発明の詳細な説明】 [産業上の利用分野コ 本発明は、プリント基板製造工程より排出される廃液の
処理方法に関する。特に、廃液を!IJ車な方法で再生
して現像液又は剥離液として繰り返し使用することので
きるようにした廃液処理方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for treating waste liquid discharged from a printed circuit board manufacturing process. Especially waste liquid! The present invention relates to a method for treating waste liquid that can be recycled using an IJ method and used repeatedly as a developer or stripping liquid.

[従来の技術] 従来のプリント基板製造の廃液処理技術では。[Conventional technology] With conventional waste liquid treatment technology for printed circuit board manufacturing.

いずれも廃液の回収は考慮しておらず、検出の全量処理
を前提としている。プリント基板製造工程より排出する
現像廃液、剥離廃液は、水溶性フォトレジスト樹脂及び
消泡剤を溶解したアルカリ性廃液であるが2高濃度のフ
ォトレジスト樹脂を含み、高いCOD例えば、 500
0〜lO100OO/l、亦、高いBoD例えば、 1
1000−3000ffI/lノ(II ヲ示t モ(
7)であり、このため、廃液処理コストは極めて高いも
のであった。
None of these methods takes into account the recovery of waste liquid, and assumes that the entire amount of detection will be processed. The developing waste liquid and stripping waste liquid discharged from the printed circuit board manufacturing process are alkaline waste liquids in which a water-soluble photoresist resin and an antifoaming agent are dissolved.2 They contain a high concentration of photoresist resin and have a high COD, e.g. 500.
0~lO100OO/l, or high BoD e.g. 1
1000-3000ffI/lノ(II
7), and therefore the waste liquid treatment cost was extremely high.

従来、この処理法には、酸−生物−活性炭による処理の
ものと、逆浸透法によるもの等があるが、これらには2
次のような問題点がある。前者においては、生物処理の
効率が低く 、COD除去率は50%以下である。即ち
、生物的に分解することが困難であること、活性炭に対
する汚濁物負荷が大きく、処理コストを押し挙げること
、廃液の数十倍量という大量の希釈水を必要とすること
、酸添加や中和処理で多量の薬品量が消費きれること、
生物処理には大型槽を要し設置面積が大きくなること等
、そして、その処理費用は膨大である。
Conventionally, this treatment method includes one using acid-biological-activated carbon and the other using reverse osmosis.
There are the following problems. In the former case, the efficiency of biological treatment is low and the COD removal rate is less than 50%. Specifically, it is difficult to decompose biologically, the pollutant load on activated carbon is large, raising the treatment cost, a large amount of dilution water is required, tens of times the amount of waste liquid, and acid addition and A large amount of chemicals can be consumed through Japanese processing,
Biological treatment requires a large tank, which requires a large installation area, and the treatment cost is enormous.

また、後者においては、プリント基板製造より排出きれ
る廃液は、無機質を2%程度含有しているため、高いa
縮倍率が確保できない、即ち、浸透圧の上昇により5倍
の濃縮の程度が実用上の限界である。そのために、廃液
の約115程度の濃縮液が処理しなければならないもの
として残るものである。
In addition, in the latter case, the waste liquid discharged from printed circuit board manufacturing contains about 2% inorganic substances, so it has a high a
The practical limit is that the reduction ratio cannot be ensured, that is, the degree of concentration is 5 times due to an increase in osmotic pressure. Therefore, about 115 ml of concentrated liquid waste remains to be treated.

[発明が解決しようとする問題点] プリント基板製造で排出される現像廃液及び剥離廃液は
、水溶性フォトレジスト樹脂及び消泡剤等を溶解したア
ルカリ性廃液であり、また、COD、BODが高く、廃
液処理コストも高いものである。一方、コストのかかっ
ている現像液、!1離液を従来は全量処分していた。こ
れに対して2本発明は、廃液処理コストの低減された廃
液処理方法を提供することを目的とする。また、現像液
[Problems to be Solved by the Invention] The developing waste liquid and stripping waste liquid discharged in printed circuit board manufacturing are alkaline waste liquids in which water-soluble photoresist resin, antifoaming agent, etc. are dissolved, and they have high COD and BOD. Waste liquid treatment costs are also high. On the other hand, the developer is costly! 1. Previously, the entire amount of syneresis was disposed of. In contrast, it is an object of the present invention to provide a waste liquid treatment method with reduced waste liquid treatment costs. Also, developer.

別離液を再生使用できる廃液処理法を提供することを目
的とする。
The purpose of the present invention is to provide a waste liquid treatment method that allows the separation liquid to be reused.

[問題点を解決するだめの手段] 本発明は、プリント基板製造工程より排出する現像廃液
又は′)11離廃液を処理する方法おいて。
[Means for Solving the Problems] The present invention provides a method for treating developer waste liquid or 11) waste liquid discharged from a printed circuit board manufacturing process.

フォトレノスト樹脂及び消泡剤等を含む現像廃液又は剥
離廃液を別々に限外濾過にかけ、その限外濾過膜を透過
した液と、各々現像液又は剥離液としてくりかえし再使
用することを特徴とするフォトレジスト廃液の処理方法
である。
A photoreceptor characterized in that a developer waste solution or a stripping waste solution containing a photorenost resin, an antifoaming agent, etc. is separately subjected to ultrafiltration, and the solution that passes through the ultrafiltration membrane is repeatedly reused as a developer solution or a stripping solution, respectively. This is a method for treating resist waste liquid.

[作用コ 従来の廃液処理法では、廃液の全量を処理するが1本発
明による廃液処理法では、廃液量は限外濾過により、約
1/10〜1/20に濃縮し、その濃縮液を中和、脱水
a過、仕上げ処理することにより、処理すべき廃液量を
減少できるものである。従って、最終工程での2例えば
、逆浸透法により排出きれ処分すべき廃液量は、(1/
10〜1/20)X(115)寓1150〜1/100
程度に低減することが可能になる。また、現像廃液、剥
離廃液中のアルカリ剤、消泡剤についても、その大半を
回収し再使用できる。
[Operations] In the conventional waste liquid treatment method, the entire amount of waste liquid is treated, but in the waste liquid treatment method according to the present invention, the amount of waste liquid is concentrated to about 1/10 to 1/20 by ultrafiltration, and the concentrated liquid is By performing neutralization, dehydration, filtration, and finishing treatments, the amount of waste liquid to be treated can be reduced. Therefore, in the final process, the amount of waste liquid to be discharged and disposed of, for example, by reverse osmosis, is (1/
10~1/20)
It becomes possible to reduce the amount to a certain extent. Furthermore, most of the alkaline agents and antifoaming agents in the developer waste solution and stripping waste solution can be recovered and reused.

本発明による廃液処理のシステムを第1図に示す。A waste liquid treatment system according to the present invention is shown in FIG.

従来は、プリント基板製造の現像、剥離工程より排出す
る各廃液を混合し、第2,3図に示す方法で処理してい
た。酸−生物−活性炭による処理法(第2図)は、現像
廃液と剥離廃液を合わせ。
Conventionally, various waste liquids discharged from the development and peeling processes of printed circuit board manufacturing have been mixed and treated by the method shown in FIGS. 2 and 3. The acid-biological-activated carbon treatment method (Figure 2) combines the developer waste and stripping waste.

酸添加によりアルカリ性を酸性にし、凝集剤を入れ、凝
集せしめ、脱水し、脱水スラッジを除去し、その洗浄希
釈水をNaOHで中和し1次に、生物処理し、沈殿せし
め、そのスラッジを除去し、また、沈殿分離された濾液
は更に濾過きれ、活性炭に吸着きれ、清浄水は、放流さ
れる。この処理法は、前記のように効率が悪く、活性炭
の汚濁物負荷が大きく、コスト高になり易く、酸添加、
中和剤添加などで大量の薬剤を必要とする。
Make the alkaline acidic by adding acid, add a flocculant, flocculate, dehydrate, remove dehydrated sludge, neutralize the wash dilution water with NaOH, first, biologically treat, precipitate, and remove the sludge. The precipitated filtrate is further filtered and adsorbed on activated carbon, and the clean water is discharged. As mentioned above, this treatment method is inefficient, has a large pollutant load on activated carbon, tends to be expensive, and requires acid addition.
Large amounts of chemicals are required, including the addition of neutralizing agents.

第3図に示きれる逆浸透法においては、現像廃液と剥離
廃液を合わせ、濾過し1次に、逆浸透法により濃縮し、
透過液は、硫酸等で中和し、希釈し、放流していた。こ
こでは、前記のように深廃液の約115の量となる濃縮
液の処理が問題になこれに対して1本発明の廃液処理法
では、現像、剥離廃液を各々アルカリ性に保持しつつ、
限外a過膜を通じて、a遇するものである。現像廃液で
は、フォトレノスト樹脂成分が、限外a過膜を通過せず
に、a縮液として残り1回収系外へ排出きれるとともに
限外濾過膜の透過液を現像液としてもどし再び利用する
ものである。また、剥離廃液の処理では、限外濾過膜を
通過した液は、剥離液として再び使用するためにリサイ
クルされるものである。
In the reverse osmosis method shown in Figure 3, the developer waste solution and stripping waste solution are combined, filtered, and then concentrated by reverse osmosis method.
The permeate was neutralized with sulfuric acid, etc., diluted, and discharged. Here, as mentioned above, the problem is the treatment of the concentrated liquid, which has an amount of about 115% of the deep waste liquid.In contrast, in the waste liquid treatment method of the present invention, the developing and stripping waste liquids are each kept alkaline, while
Through the ultraviolet membrane, it is exposed to aphrodisiacs. In the development waste solution, the photorenost resin component does not pass through the ultra-a filtration membrane, but remains as an a-condensed solution and is discharged out of the recovery system, while the ultra-filtration membrane permeate is returned as a developer and used again. be. In addition, in the treatment of stripping waste liquid, the liquid that has passed through the ultrafiltration membrane is recycled to be used again as a stripping solution.

この限外濾過膜により分離きれる濃縮液は、ヌ廃液量の
1/10〜1/20にまで低減可能である。
The concentrated liquid that can be separated by this ultrafiltration membrane can be reduced to 1/10 to 1/20 of the amount of waste liquid.

本発明によるプリント基板製造廃液の処理を可能ならし
める条件は、限外濾過膜のモジュール特性と廃液の成分
とのitが適切でなければなら°ず2本発明方法による
限外濾過膜は以下の条件を満たすものでなければならな
い。
The conditions that enable the treatment of printed circuit board manufacturing waste liquid according to the present invention are that the module characteristics of the ultrafiltration membrane and the components of the waste liquid must be appropriate. It must meet the conditions.

第1に限外濾過膜のモジュールは、処理すべきフォトレ
ジスト廃液がアルカリ性であるので、耐アルカリ性でな
(すればならない。
First, the ultrafiltration membrane module must be alkali-resistant because the photoresist waste liquid to be treated is alkaline.

第2に、アルカリ性の廃液に溶解された無機質を透通し
、フォトレジスト成分を除くために、限外濾過膜の分画
分子量は、好適には5000〜10000の範囲である
。この時、廃液の浮遊物質の濃度は、10000mg/
lまでが許賽される。
Secondly, the molecular weight cutoff of the ultrafiltration membrane is preferably in the range of 5,000 to 10,000 in order to pass through the inorganic matter dissolved in the alkaline waste liquid and remove the photoresist component. At this time, the concentration of suspended solids in the waste liquid was 10,000 mg/
Up to l is allowed.

これは1本発明方法によるフォトレジスト廃液の処理法
を、実際のフォトレジストの現像廃液及び剥離廃液の特
性を考慮して、このN囲が定められた。即ち、限外濾過
膜は一般にある一定の分子量範囲の溶質を除去する分子
量分画特性を有するが、この特性と、フォトレジストの
現像廃液及び剥離廃液中に含まれるフォトレジスト、消
泡剤成分及び無機アルカリ剤に対する除去性能を測定し
た結果を第4図に示す、ここで除去率とは、膜処理の供
給原液に対する膜透過液中での低減率に相当し、換言す
れば、膜を透過しない成分の比率である。第4図は、(
1)消泡剤なしの現像廃液、即ち。
This N range was determined by taking into consideration the characteristics of the actual photoresist development waste solution and stripping waste solution for the photoresist waste solution treatment method according to the method of the present invention. That is, an ultrafiltration membrane generally has a molecular weight fractionation characteristic that removes solutes within a certain molecular weight range, but in addition to this characteristic, it also has a molecular weight fractionation characteristic that removes solutes within a certain molecular weight range. The results of measuring the removal performance for inorganic alkaline agents are shown in Figure 4. Here, the removal rate corresponds to the reduction rate in the membrane permeate liquid relative to the raw solution supplied for membrane treatment. It is the ratio of ingredients. Figure 4 shows (
1) Development waste without antifoaming agent, ie.

1重量%のNa+co+y夜にフォトレジスト0 、2
m’/1溶解きれたA液中のフォトレジスト成分の除去
率、(り消泡剤なしの剥離廃液、即ち、2重量%のKO
H液にフォトレジスト0.3m”/1溶解きれたB/&
中のフォトレジスト除去率、0)消泡剤(ポリアルキレ
ンゲリコール)を含むC液の消泡剤成分の除去率、 (
4) 1重量%のNa+CO−を含むD液中のソーダ分
(NaHCO1,NaOHなど)fa質成分の除去率及
び(92重量%のKOHを含むE液中のKOH成分の除
去率をグラフに示したものである。このグラフより。
1wt% Na+co+y photoresist 0,2 at night
m'/1 Removal rate of photoresist component in completely dissolved solution A (removal waste solution without antifoaming agent, i.e., 2% by weight of KO)
B/& photoresist 0.3m”/1 completely dissolved in H solution
Removal rate of the photoresist inside, 0) Removal rate of antifoaming agent component of liquid C containing antifoaming agent (polyalkylene gellicol), (
4) The graph shows the removal rate of fa components such as soda (NaHCO1, NaOH, etc.) in solution D containing 1% by weight of Na+CO- and the removal rate of KOH components in solution E (containing 92% by weight of KOH). From this graph.

フォトレノスト成分が100%近く除去でき、消泡剤及
びアルカリ成分を大部分回収できる範囲は2分子量分画
が、5000〜tooooの範囲にある場合であること
が分かる。フォトレジスト処理の現像廃液及びシ1離廃
液中の有効成分たる。
It can be seen that the range in which nearly 100% of the photorenost component can be removed and most of the antifoaming agent and alkali components can be recovered is when the 2 molecular weight fraction is in the range of 5000 to toooo. It is an active ingredient in the developing waste solution and the cleaning waste solution from photoresist processing.

消泡剤及びアルカリ成分を極力回収することが経済的で
ある。一方、フォトレジスト成分はできる限り取り除き
再生液のフォトレジスト溶解性能を高く維持する必要が
ある。このような諸点から本発明による限外濾過膜の特
性の範囲は、上記のように定めた。
It is economical to recover as much of the antifoaming agent and alkaline components as possible. On the other hand, it is necessary to remove as much of the photoresist component as possible to maintain high photoresist dissolving performance of the regenerating solution. From these points, the range of characteristics of the ultrafiltration membrane according to the present invention was determined as described above.

この条件に適合する限外111通膜モジユールは。The Ultra 111 membrane module that meets this condition is:

膜素材として合成高分子材の中で1例えば、ポリスルホ
ン系、ポリイミド系、アクリルニトリル系等が良好であ
る。また、モジュールの形式は。
Among synthetic polymer materials, for example, polysulfone, polyimide, acrylonitrile, etc. are suitable as membrane materials. Also, what is the format of the module?

チューブラタイプが好適である。Tubular type is preferred.

プリント基板製造に用いるフォトレジストの感光の後に
、それを現像するため、 Egち、)オドレジストを除
去するための現像工程で使用される現像液、処理すべき
現像廃液、限外濾過された液の性質及び、プリント基板
製造で導体板等をエツチングした後、光重合したフォト
レジストを剥離するための剥離液、その剥離廃液、限外
′a遇された液等の特性を第1表に示す。
To develop the photoresist used in the manufacture of printed circuit boards after exposure, the developer used in the development process to remove the photoresist, the developer waste to be treated, and the ultrafiltered solution. Table 1 shows the properties of the stripping solution used to strip the photoresist that has been photopolymerized after etching conductor plates, etc. in the manufacture of printed circuit boards, its stripping waste solution, and the solution subjected to extreme conditions.

本発明により、現像廃液を限外濾過により処理し、限外
濾過膜を通過した現像液を再び現像液として、現像処理
に使用するためには、前の現像処理でアルカリ成分が消
費されて、pH値が低下しているために、@外a過膜通
過液には、アルカリ液を補給してpHの調整を行なう、
亦、剥離液においても、同様にpHの調整を行ない、限
外濾過膜通過液を剥離液としてもどす。
According to the present invention, in order to process the developer waste liquid by ultrafiltration and use the developer that has passed through the ultrafiltration membrane as a developer again in the development process, the alkali component is consumed in the previous development process. Since the pH value has decreased, alkaline solution is replenished to the liquid passing through the outer membrane to adjust the pH.
In addition, the pH of the stripping solution is similarly adjusted, and the liquid passing through the ultrafiltration membrane is returned as the stripping solution.

再生現像液のpH+7)調整にIf 、 Na+CO,
、NaOH溶液を補給する。現像液中のNaイオンが増
加すると、!411工程で溶解すべきフォトレジストま
でが溶解する恐れがあるが1本発明方法では膜濃縮廃液
に対応してNa、CO8の補給量を設定することでNa
イオンの蓄積を防止することができる。
If, Na+CO, to adjust the pH+7) of the regenerated developer.
, replenish the NaOH solution. When Na ions in the developer increase,! There is a risk that even the photoresist that should be dissolved in the 411 step may be dissolved.However, in the method of the present invention, the Na and CO8 replenishment amounts can be set in accordance with the membrane concentrated waste liquid.
Accumulation of ions can be prevented.

再生剥離液の成分の調整は、NaOH或いはKOH溶液
でpHを14程度に調整することで十分である。
It is sufficient to adjust the components of the regenerated stripping solution by adjusting the pH to about 14 with a NaOH or KOH solution.

現像及び剥離の両工程より排出され、限外a過で膜濃縮
されるa糊液は2回収系の外に排出きれ第1図に示すよ
うに処理される。
The a-glue solution discharged from both the development and stripping steps and concentrated through ultraviolet a-filtration is discharged to the outside of the two-recovery system and processed as shown in FIG.

現像廃液及び剥離廃液の両方を処理する場合は、各々の
系の限外濾過からでる濃縮液を混合して処理する。アル
カリ水溶液に溶解したフォトレジスト成分は、水中のO
H−イオンの減少とともに不溶化する。上記した本発明
による回収系に統いて、酸添加処理し2次に、脱水処理
し、脱水スラッジを取り除き、濾過する。これらの一連
の処理は2以上のフォトレジスト成分の性質を利用した
ものである。最終工程としては、逆浸透法、紫外線分解
、活性炭吸着或いは生物処理法などにより行なうことが
できる。その適用処理方法は、設電条件に対応して選定
すべきであるが、圧力調整、限外濾過膜の種類及び数量
の変更等により廃液に溶解している成分、a度の変化に
対応する逆浸透処理が好適である。
When treating both the developing waste liquid and the stripping waste liquid, the concentrated liquids from the ultrafiltration of each system are mixed and treated. The photoresist component dissolved in the alkaline aqueous solution is
It becomes insolubilized as H- ions decrease. It is connected to the above-mentioned recovery system according to the present invention, subjected to acid addition treatment, then dehydration treatment, removal of dehydrated sludge, and filtration. These series of treatments utilize the properties of two or more photoresist components. The final step can be carried out by reverse osmosis, ultraviolet decomposition, activated carbon adsorption, biological treatment, or the like. The applied treatment method should be selected according to the power installation conditions, but it should also be possible to respond to changes in the components dissolved in the waste liquid and the degree of a by adjusting the pressure, changing the type and quantity of ultrafiltration membranes, etc. Reverse osmosis treatment is preferred.

本発明による現像廃液及び剥離廃液の回収系での限外濾
過膜には1分画分子量5000〜10000のものを用
いることが好適である。溶解されとフォトレジスト成分
は、この分画分子量以上の分子量の高分子物質であるた
めに、フォトレジスト成分のほぼ全量が濃縮液に移行し
、アルカリ剤と消泡液は透過液に残留するものである。
It is preferable to use an ultrafiltration membrane having a molecular weight cut-off of 5,000 to 10,000 in the development waste solution and stripping waste solution recovery system according to the present invention. Once dissolved, the photoresist component is a polymeric substance with a molecular weight greater than this molecular weight cutoff, so almost all of the photoresist component is transferred to the concentrated solution, and the alkaline agent and antifoaming solution remain in the permeate solution. It is.

この限外濾過膜による濃縮倍率は透過速度等に起因する
経済性によって異なるが、10〜20倍が適切である。
The concentration ratio by this ultrafiltration membrane varies depending on the economic efficiency caused by the permeation rate, etc., but is suitably 10 to 20 times.

次に大発明の処理法の実施例による実証テストを述べる
が1本発明は、これにより限定諮れるものではない。
Next, a demonstration test using an embodiment of the processing method of the great invention will be described, but the present invention is not limited by this.

[実施例] ポリスルホン系で2分画分子量10000の限外濾過膜
を用いて現像廃液を、操作圧力20kg/cm’で温度
20〜30°Cの条件で限外濾過にかけリサイクルテス
トを行なった。その結果、フォトレブストフイルムの溶
解量はほぼ一定していた。限外濾過膜による溶解有機物
の除去率は約80%であった6分離性は限外濾過膜の孔
径が小きいほど大きく、限外濾過膜の分画分子量を50
00にすると、除去率は85%であった。
[Example] Using a polysulfone-based ultrafiltration membrane with a molecular weight cut-off of 10,000, a recycling test was carried out by subjecting development waste to ultrafiltration at an operating pressure of 20 kg/cm' and a temperature of 20 to 30°C. As a result, the amount of photorebst film dissolved was almost constant. The removal rate of dissolved organic matter by the ultrafiltration membrane was approximately 80%. 6. The smaller the pore size of the ultrafiltration membrane, the greater the separation performance.
00, the removal rate was 85%.

限外濾過の透過液中に含まれる15〜20%の有機物は
もとの現像液に含まれていた消泡剤であり、これも回収
することができた。現像廃液からの透過液は、約95%
まで回収することができる。
The 15 to 20% organic matter contained in the permeate from the ultrafiltration was the antifoaming agent contained in the original developer, and this was also able to be recovered. Permeated liquid from developer waste is approximately 95%
can be recovered up to.

この限外濾過により、現像廃液は、プリント基板製造工
程で使用される液量の1/10〜1/20に減容きれ、
a糊液として排出きれる。次に。
Through this ultrafiltration, the volume of the developing waste liquid can be reduced to 1/10 to 1/20 of the liquid volume used in the printed circuit board manufacturing process.
a It can be discharged as a glue solution. next.

この濃縮液に、硫酸で酸添加を行ない、pH2〜4にし
た。このことによりレジスト成分の大部分(90〜95
%)は、不溶化きれる。この不溶化成分を脱水濾過によ
り除去し、その酸処理濾液に逆浸透処理を行ない、5倍
程度a縮きれたa糊液と、溶解レジスト成分の99%程
度除去したC○D20mg/l程度以下の透過液として
排出される。この透過液は中和後、放流或いは用水とし
て回収するできる程度のものであった。
This concentrated solution was acidified with sulfuric acid to adjust the pH to 2-4. This allows most of the resist components (90 to 95
%) can be insolubilized. This insolubilized component is removed by dehydration filtration, and the acid-treated filtrate is subjected to reverse osmosis treatment to produce a glue solution that has shrunk by about 5 times and a C○D of less than about 20 mg/l, which has removed about 99% of the dissolved resist components. Excludes as permeate. After neutralization, this permeate was of such a level that it could be discharged or recovered as water for use.

[発明の効果コ 本発明のプリント基板製造の廃液処理方法は。[Effects of invention The present invention provides a method for treating waste liquid from manufacturing printed circuit boards.

限外濾過を用いて現像液又は剥離液をリサイクルする廃
液処理であり、第1に、現像廃液及び剥離廃液を前処理
過程でフォトレジストの溶解した高分子物質等を除去し
、a縮された廃液にしてから酸添加等の廃液処理により
有機物を除くことができること、第2に、現像廃液及び
剥離廃液を前処理でその水、有効物質のみを透過回収し
、リサイクル利用できること、第3に、フォトレジスト
溶解廃液の処理しなければならない全量を著しく減少き
せることができ、廃液の処理コストを著しく低減できた
ことなどの技術的効果が得られた。
This is a waste liquid treatment in which the developing solution or stripping solution is recycled using ultrafiltration. First, polymer substances such as dissolved photoresist are removed from the developing waste solution and stripping waste solution in the pretreatment process, and the a-condensed solution is removed. Second, organic matter can be removed by waste liquid treatment such as addition of acid, secondly, the development waste liquid and stripping waste liquid can be pre-treated to permeate and recover only the water and effective substances, and thirdly, they can be recycled. Technical effects such as a significant reduction in the total amount of photoresist dissolution waste liquid that must be treated and a significant reduction in waste liquid processing costs were obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は9本発明のプリント基板製造の現像廃液又は剥
離廃液を処理するシステムを示す説明図である。 第2図は、従来のプリント基板製造の廃液処理のシステ
ムを示すフローシートである。 第3図は、従来のプリント基板製造の廃液処理の他の例
のシステムを示すフローシートである。 第4図は、限外濾過漠の除去性能を示すグラフである。 ゴ ふ 7◆10210コ  2     57104  2 
    57+05  2版の公称釣面分子景 第4図 手h″dネ市1F三せt 昭和61年12月つ日 特許庁艮官 黒 1)明 維 殿 1、事件の表示 昭和61年特許願第171894号2
、発明の名称  フォトレジスト廃液処理方法3、補正
をする者 ・バ件との関係   特許出願人 住所 東京都千代田区大手町二丁目2番1号名称 (2
10)r、4¥KMyV&6式会社ゴウ  ダ    
 シゲル 代表者 合 1) 茂 4、代理人 東京都千代F口区大手町二丁目2番1号住友重機械工業
株式会社内 (7490)弁理士 加 藤 正 信(外1名)5、復
代理人 〒102東京都千代田区一番町11の16、補正の対象
  明細書の[発明の詳細な説明]及び[図面の簡単な
説明]の項 7、補正の内容 (1)明細書第2頁第1行目の「検出の、を[廃液の]
に訂正する。 (2)明細書第3頁第2行目の「プリント基板製造ヨの
次に[工程コを挿入する。 (3〉明細書第9頁第3行目の1合成高分子材の中で9
例えば、」を[金属酸化物の無機材料2合成高分子材料
の中で1例えば、二酸化ジルコニウム系、]に訂正する
。 (4)明細書第11頁第5行目及び同頁第8行目の「通
過液、を[透過液]に訂正する。 (5)明細書第11頁第12行目の1本発明方法ではヨ
の次に[レジストを溶解する前の処理液(現像液又は剥
離液)のpHになるまでNaOHを加えるとともに]を
挿入する。 (6)明細書第11頁第12行目と第15行目の間に次
の文章を挿入する。 [Naイオンの蓄積は5次のようにして防止きれる、即
ち、処理中液で。 NatCOj+ HmO−NaHCO3+ NaOHの
ように加水分解し、フォトレジストをR−OHで表わす
と1次のように溶解する。 Mascot +  H+O→NaHCO+ + Na
OHNaOH+  R−OH−R−OH+  HmOこ
の反応が進行し、 NaOHを消費するにつれ。 HCO+−かり常になり、処理液の溶解能力が次第に低
下してくる。 許賽できない溶解能力まで低下した処理液は廃液として
限外濾過にかけられるが、その透過液中には殆どレンス
ト成分が残留せず、大部分の無機アルカリ成分のみが存
在含有されている。 この限外濾過で処理きれた透過液に、 NaOHをレジ
ストの溶解前のpH値(第1表では、pH=11.5)
に達するまで加えると1次の式の矢印の方向に平衡反応
が進行する。 Mascot + Lo  ’−NaHCO+ + N
a0)l↑即ち、 NaOHが増加すると、tP衡が左
側に進み。 co、’−イオンが増加し、新群な処理液に復元するこ
とができる。 更に、限外濾過でa縮され回収系の外に排出される濃縮
液量に相当する量の新鮮な処理液を補充する。これによ
りNaイオンの蓄積や、液量の変動がなしに、処理液廃
液(現像廃液、剥離廃液)を再生、リサイクルして使用
することができる。](7)明細書第12頁第19行目
の1とフォトレジスト、を[た)オドレジスト]に訂正
する。 (8)明細書第13頁第8行目と同第9行目の間に次の
記載を挿入する。 ([実施例1コ 第1図の現像廃液、剥離廃液の再生処理システムに基づ
き、現像液(pH11,5で、レジスト未溶解のもの)
を回分操作で繰り返し15回再生した。このような本発
明による現像液の処理について、各々の回での現像廃液
、限外濾過膜透過液及び再生現像液の液質を第5図のグ
ラフに示す。 使用した膜は、ミリポア社のポリスルホン製平膜(分画
分子’Ic 10000 、膜面積0.012m1)で
ある、限外uJ膜は操作圧力3 kg / am’で。 液温度20″c、1縮倍率20倍により運転した。 成分調整は、供試現像廃液(pH10,5)1000ミ
リリ/トルより得られた950ミリリ/トルの透過液に
NaOHをpH11,5になるように添加した後、新た
に調整した現像液50ミリリツトル(′a縮液液量相当
する)を添加することによって行なった。 現像液を繰る返し再生し、実験を行なった。その結果p
H11,5に調整した後は、再生現像液のNaeI度は
一定であることを確認した。限外濾過の透過液中に、繰
り返し回数の進行とともにレジスト成分CTOC:全有
機炭素量)が蓄積されることが認められるが、これは無
限に濃縮きれることはない、然し乍ら、毎回5%の新現
像液を補充しているために、その希釈率に見合う濃度で
平衡に達したことが認められた。 新現像液で1.OcPであった粘度は、レジストが溶解
した後、1.8cPに増加した0本発明方法による再生
処理では、現像液の粘度についても再生効果があること
が認められた。 プリント基板の現像は、一定温度、一定圧力で現像液を
数十秒にわたりスプレーする方法を採用した。そのスプ
レー流速の低下等による現像不足を防止するため液粘度
の−F昇を抑制する必要があった。) (9)明細書第13頁第9行目の「実施例ヨを[実施例
2コに訂正する。 (10)明m古の[図面の簡単な説明]の項、即ち。 第15頁下から第1行目に次に[第5図は、現像液を繰
り返し再生したときの現像廃液、膜透過再生液のTOC
及び再生現像液のNaLy′)a度を示すグラフである
。コを挿入する。 (11)添付図面の第5図を別紙の如く補充する。
FIG. 1 is an explanatory diagram showing a system for treating developing waste liquid or stripping waste liquid in printed circuit board manufacturing according to the present invention. FIG. 2 is a flow sheet showing a conventional waste liquid treatment system for manufacturing printed circuit boards. FIG. 3 is a flow sheet showing another example of a system for treating waste liquid from conventional printed circuit board manufacturing. FIG. 4 is a graph showing the ultrafiltration desert removal performance. Gofu7◆10210ko 2 57104 2
57+05 2nd Edition Nominal Fishing Surface Molecular Landscape Figure 4 Hand h''d Ne City 1F 3rd December 1985 Patent Office Officer Black 1) Ming Wei Dian 1, Incident Indication Patent Application No. 1988 171894 No. 2
, Title of the invention Photoresist waste liquid treatment method 3, Person making the amendment/Relationship with the matter Patent applicant address 2-2-1 Otemachi, Chiyoda-ku, Tokyo Name (2)
10) r, 4¥KMyV&6 type company gouda
Shigeru Representatives 1) Shigeru 4, Agent, Sumitomo Heavy Industries, Ltd., 2-2-1 Otemachi, Chiyo F-ku, Tokyo (7490) Patent Attorney Masanobu Kato (1 other person) 5, Sub-Agent Person Address: 11-16, Ichiban-cho, Chiyoda-ku, Tokyo 102, Subject of amendment Section 7 of [Detailed Description of the Invention] and [Brief Description of Drawings] of the specification, Contents of amendment (1) Page 2 of the specification In the first line, “Detection of [waste liquid]
Correct. (2) Insert ``Process `` after ``printed circuit board manufacturing'' in the second line of page 3 of the specification.
For example, ``inorganic materials of metal oxides 2 synthetic polymeric materials 1, for example, zirconium dioxide-based'' is corrected. (4) “Permeate liquid” on page 11, line 5 of the specification and line 8 of the same page is corrected to “permeate liquid”. (5) 1. Method of the present invention on page 11, line 12 of the specification Then, insert [Add NaOH until the pH of the processing solution (developing solution or stripping solution) is reached before dissolving the resist] after ``Y''. (6) Page 11, line 12 and 15 of the specification. Insert the following sentence between the lines: [Accumulation of Na ions can be prevented in the following way, i.e. in the processing solution: NatCOj+ HmO-NaHCO3+ Hydrolyzes like NaOH, and R the photoresist. When expressed as -OH, it dissolves as follows: Mascot + H + O → NaHCO + + Na
OHNaOH+ R-OH-R-OH+ HmO As this reaction progresses and consumes NaOH. HCO+- becomes constant, and the dissolving ability of the treatment liquid gradually decreases. The treated liquid whose dissolution ability has decreased to an unacceptable level is subjected to ultrafiltration as waste liquid, but the permeated liquid contains almost no Lenst components and only most of the inorganic alkaline components. Add NaOH to the permeate that has been processed through ultrafiltration at the pH value before dissolving the resist (in Table 1, pH = 11.5).
When the reaction is added until it reaches , an equilibrium reaction proceeds in the direction of the arrow in the first-order equation. Mascot + Lo'-NaHCO+ + N
a0)l↑ That is, as NaOH increases, the tP equilibrium moves to the left. co,'- ions increase, and a new group of processing liquids can be restored. Furthermore, an amount of fresh processing liquid is replenished in an amount corresponding to the amount of concentrated liquid that has been a-condensed by ultrafiltration and is discharged from the recovery system. This makes it possible to regenerate, recycle, and use the processing liquid waste (developing waste, stripping waste) without accumulation of Na ions or fluctuations in liquid volume. ] (7) On page 12, line 19 of the specification, 1 and photoresist are corrected to [ta)odresist]. (8) The following statement is inserted between line 8 and line 9 of page 13 of the specification. ([Example 1] Based on the recycling treatment system for developing waste solution and stripping waste solution shown in Figure 1, developer solution (pH 11.5, resist not dissolved)
was repeated 15 times in a batch operation. Regarding the processing of the developer according to the present invention, the liquid quality of the developer waste, the ultrafiltration membrane permeate, and the regenerated developer in each cycle is shown in the graph of FIG. The membrane used was a polysulfone flat membrane manufactured by Millipore (fraction molecule 'Ic 10000, membrane area 0.012 m1), and the ultra-uJ membrane was operated at an operating pressure of 3 kg/am'. The operation was carried out at a liquid temperature of 20"C and a reduction ratio of 20 times. Component adjustment was carried out by adding NaOH to the permeate of 950 ml/Torr obtained from 1000 ml/Torr of a sample developing waste solution (pH 10.5) to a pH of 11.5. After adding 50 milliliters of newly prepared developer solution (equivalent to the amount of condensed liquid), the developer solution was repeatedly regenerated and the experiment was conducted.As a result, p
After adjusting to H11.5, it was confirmed that the NaeI degree of the regenerated developer was constant. It is observed that the resist component CTOC (total organic carbon content) accumulates in the permeate of ultrafiltration as the number of repetitions progresses, but this cannot be concentrated infinitely, however, 5% new It was found that because the developer was being replenished, equilibrium was reached at a concentration commensurate with the dilution rate. 1. with new developer. The viscosity, which was OcP, increased to 1.8 cP after the resist was dissolved. It was found that the regeneration process according to the method of the present invention also had a regeneration effect on the viscosity of the developer. The printed circuit board was developed by spraying a developer at a constant temperature and pressure for several tens of seconds. In order to prevent insufficient development due to a decrease in spray flow rate, etc., it was necessary to suppress the -F increase in liquid viscosity. ) (9) "Example 2" on page 13, line 9 of the specification is corrected to "Example 2." (10) "Brief explanation of the drawings" section in Ming-Old, i.e., page 15. The first row from the bottom shows the TOC of the developer waste solution and membrane permeation regeneration solution when the developer is repeatedly regenerated.
and is a graph showing the degree of NaLy')a of the regenerated developer. Insert ko. (11) Figure 5 of the attached drawings is supplemented as shown in the attached sheet.

Claims (1)

【特許請求の範囲】 プリント基板製造工程より排出する現像廃液又は剥離廃
液を処理する方法おいて、 フォトレジストを含む現像廃液又は、剥離廃液を別々に
限外濾過にかけ、その限外濾過膜を透過した液を、各々
現像液又は剥離液としてくりかえし再使用することを特
徴とするフォトレジスト廃液処理方法
[Claims] A method for treating waste development liquid or waste stripping liquid discharged from a printed circuit board manufacturing process, wherein the waste development liquid or waste peeling liquid containing photoresist is separately subjected to ultrafiltration, and the waste liquid is passed through the ultrafiltration membrane. A photoresist waste liquid treatment method characterized by repeatedly reusing the solution as a developing solution or a stripping solution, respectively.
JP17189486A 1986-07-23 1986-07-23 Photoresist waste liquid treatment method Expired - Lifetime JPH0615078B2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP17189486A JPH0615078B2 (en) 1986-07-23 1986-07-23 Photoresist waste liquid treatment method
US07/076,372 US4786417A (en) 1986-07-23 1987-07-22 Management of photoresist materials containing waste solution
KR1019870007965A KR950014323B1 (en) 1986-07-23 1987-07-22 Management of photoresist materials containing waste solution
DE8787306477T DE3782205T2 (en) 1986-07-23 1987-07-22 TREATING A WASTE SOLUTION CONTAINING PHOTORESIST MATERIALS.
AT87306477T ATE81476T1 (en) 1986-07-23 1987-07-22 TREATMENT OF A WASTE SOLUTION CONTAINING PHOTORESIST MATERIALS.
EP87306477A EP0254550B1 (en) 1986-07-23 1987-07-22 Treatment of photoresist materials containing waste solution
CN87105308A CN1010555B (en) 1986-07-23 1987-07-23 Treatment of waste liquid containing photoresist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17189486A JPH0615078B2 (en) 1986-07-23 1986-07-23 Photoresist waste liquid treatment method

Publications (2)

Publication Number Publication Date
JPS6331591A true JPS6331591A (en) 1988-02-10
JPH0615078B2 JPH0615078B2 (en) 1994-03-02

Family

ID=15931780

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17189486A Expired - Lifetime JPH0615078B2 (en) 1986-07-23 1986-07-23 Photoresist waste liquid treatment method

Country Status (1)

Country Link
JP (1) JPH0615078B2 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03263048A (en) * 1990-03-14 1991-11-22 Fujitsu Ltd Method for peeling resist for photomask
JPH04172355A (en) * 1990-11-05 1992-06-19 Sumitomo Heavy Ind Ltd Developer replenishment method and replenishment device
WO1992015633A2 (en) * 1991-03-01 1992-09-17 E.I. Du Pont De Nemours And Company Improved management of waste solution containing photoresist materials
JPH10504662A (en) * 1994-08-24 1998-05-06 バイエル・コーポレーション Method and apparatus for rejuvenating developer in plate development
KR100361799B1 (en) * 1998-01-05 2003-02-05 오르가노 코포레이션 Method and apparatus for regenerating photoresist developing waste liquid
JP2004101999A (en) * 2002-09-11 2004-04-02 Mitsubishi Chemical Engineering Corp Apparatus for recycling and supplying developer solution
WO2005040930A1 (en) * 2003-10-28 2005-05-06 Toppan Printing Co., Ltd. Development device, development method, and developer circulating method
JP2007233060A (en) * 2006-03-01 2007-09-13 Toppan Printing Co Ltd Method for measuring surfactant amount, method for measuring alkali component amount, and developing device
JP2012104771A (en) * 2010-11-15 2012-05-31 Mitsubishi Paper Mills Ltd Thinning method of dry film resist

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03263048A (en) * 1990-03-14 1991-11-22 Fujitsu Ltd Method for peeling resist for photomask
JPH04172355A (en) * 1990-11-05 1992-06-19 Sumitomo Heavy Ind Ltd Developer replenishment method and replenishment device
WO1992015633A2 (en) * 1991-03-01 1992-09-17 E.I. Du Pont De Nemours And Company Improved management of waste solution containing photoresist materials
WO1992015633A3 (en) * 1991-03-01 1992-10-29 Du Pont Improved management of waste solution containing photoresist materials
JPH10504662A (en) * 1994-08-24 1998-05-06 バイエル・コーポレーション Method and apparatus for rejuvenating developer in plate development
KR100361799B1 (en) * 1998-01-05 2003-02-05 오르가노 코포레이션 Method and apparatus for regenerating photoresist developing waste liquid
JP2004101999A (en) * 2002-09-11 2004-04-02 Mitsubishi Chemical Engineering Corp Apparatus for recycling and supplying developer solution
WO2005040930A1 (en) * 2003-10-28 2005-05-06 Toppan Printing Co., Ltd. Development device, development method, and developer circulating method
JPWO2005040930A1 (en) * 2003-10-28 2007-04-19 凸版印刷株式会社 Developing device, developing method, and developer circulation method
JP4645449B2 (en) * 2003-10-28 2011-03-09 凸版印刷株式会社 Development device
JP2007233060A (en) * 2006-03-01 2007-09-13 Toppan Printing Co Ltd Method for measuring surfactant amount, method for measuring alkali component amount, and developing device
JP4736124B2 (en) * 2006-03-01 2011-07-27 凸版印刷株式会社 Development device
JP2012104771A (en) * 2010-11-15 2012-05-31 Mitsubishi Paper Mills Ltd Thinning method of dry film resist

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