JPS63298128A - Pressure sensor - Google Patents
Pressure sensorInfo
- Publication number
- JPS63298128A JPS63298128A JP13443687A JP13443687A JPS63298128A JP S63298128 A JPS63298128 A JP S63298128A JP 13443687 A JP13443687 A JP 13443687A JP 13443687 A JP13443687 A JP 13443687A JP S63298128 A JPS63298128 A JP S63298128A
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- pressure
- pressure sensor
- metal diaphragm
- thick
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 59
- 239000002184 metal Substances 0.000 claims abstract description 59
- 239000011521 glass Substances 0.000 claims abstract description 19
- 238000007639 printing Methods 0.000 claims abstract description 16
- 238000005516 engineering process Methods 0.000 claims abstract description 14
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000919 ceramic Substances 0.000 claims description 4
- 230000009972 noncorrosive effect Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 13
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 9
- 238000009413 insulation Methods 0.000 description 7
- 238000010304 firing Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は圧力センサに関し、特にダイアフラム上に感圧
抵抗を配置してなる圧力センサに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a pressure sensor, and more particularly to a pressure sensor having a pressure sensitive resistor arranged on a diaphragm.
従来、金属ダイアフラム上に歪ゲージを接着し、この歪
ゲージな感圧抵抗として用いた圧力センサが多く使用さ
れている。Conventionally, many pressure sensors have been used in which a strain gauge is bonded onto a metal diaphragm and the strain gauge is used as a pressure-sensitive resistor.
近年、金属ダイアフラム上に絶縁層を介して薄膜抵抗な
どの皮膜抵抗素子を形成し、この皮膜抵抗素子を感圧抵
抗として用いた圧力センサが実用化されている。In recent years, pressure sensors have been put into practical use in which a film resistance element such as a thin film resistor is formed on a metal diaphragm via an insulating layer, and this film resistance element is used as a pressure-sensitive resistor.
また、シリコン基板の一部にダイアフラムを形成しシリ
コンの拡散抵抗を感圧抵抗として用いた圧力センサや、
セラミック薄板でなるダイアフラム上に形成された厚膜
抵抗を感圧抵抗として用いた圧力センサも実用化されて
いる。In addition, there are pressure sensors that form a diaphragm on a part of a silicon substrate and use silicon diffused resistance as a pressure-sensitive resistance.
Pressure sensors that use a thick film resistor formed on a diaphragm made of a thin ceramic plate as a pressure-sensitive resistor have also been put into practical use.
一方、円形ダイアフラム上の応力分布はダイアフラムの
中心部と周辺部とでは応力が反転することが広く知られ
ており、この性質を利用して円形ダイアフラム上に感圧
抵抗を１個配置した圧力センサ１２個配置してハーフブ
リッジ回路を形成するようにした圧カセンサ、４個配置
してフルブリッジ回路を形成するようにした圧力センサ
などが実用化されており、圧力−電圧変換感度の向上に
役立っている。On the other hand, it is widely known that the stress distribution on a circular diaphragm is reversed between the center and the periphery of the diaphragm. Taking advantage of this property, a pressure sensor with one pressure-sensitive resistor placed on the circular diaphragm Pressure sensors in which 12 sensors are arranged to form a half-bridge circuit and pressure sensors in which 4 sensors are arranged to form a full-bridge circuit have been put into practical use, and are useful for improving pressure-voltage conversion sensitivity. ing.
上述した従来の圧カセンザは、金属ダイアフラム上に歪
ゲージなどを接着した構造の圧力センサにおいては、生
産性が悪く、低価格のものを大量生産することは困難で
あるという問題点があった。The above-described conventional pressure sensor has a problem in that a pressure sensor having a structure in which a strain gauge or the like is bonded onto a metal diaphragm has poor productivity and is difficult to mass-produce at a low price.
また、金属ダイアフラムの表面上に設けられた絶縁層上
に皮膜抵抗素子を形成して感圧抵抗として用いた圧力セ
ンサについては、積層された金属と絶縁層との異種材料
の物理的特性の相違のために不要な残留応力が発生し、
高精度および高安定度の圧力センサを歩留り良く生産す
ることは困難であるという問題点があった。In addition, for pressure sensors that form a film resistance element on an insulating layer provided on the surface of a metal diaphragm and use it as a pressure-sensitive resistor, there are differences in the physical properties of different materials between the laminated metal and the insulating layer. Unnecessary residual stress is generated due to
There has been a problem in that it is difficult to produce high-precision and high-stability pressure sensors with good yield.
さらに、シリコンやセラミックをダイアフラムとして用
いた圧カセンザにおいては、ダイアフラム自身が脆性で
あるなどの問題点があった。Furthermore, pressure sensors using silicon or ceramic as a diaphragm have problems such as the diaphragm itself being brittle.
本発明の目的は、上述の点に鑑み、金属ダイアフラム上
の通電部に沿って無機質絶縁層を部分的に設けて金属と
絶縁層との物理的特性の相違による問題点を緩和すると
ともに、無機質絶縁層上に厚膜印刷・焼成技術により感
圧抵抗およびリード線をブリッジ回路を構成するように
形成して構造上高精度および高安定度で製造が容易であ
る圧力センサを提供することにある。In view of the above-mentioned points, an object of the present invention is to partially provide an inorganic insulating layer along the current-carrying part on a metal diaphragm to alleviate the problems caused by the difference in physical properties between the metal and the insulating layer, and to The object of the present invention is to provide a pressure sensor that has high structural accuracy and stability and is easy to manufacture by forming a pressure-sensitive resistor and lead wires on an insulating layer using thick film printing and baking technology to form a bridge circuit. .
本発明の圧カセンザは、金属薄板でなる金属ダイアフラ
ムと、この金属ダイアフラムの通電部に沿って部分的に
設けられた無機質絶縁層と、この無機質絶縁層上に厚膜
印刷・焼成技術により形成された感圧抵抗と、前記無機
質絶縁層」二に厚膜印刷・焼成技術により形成され前記
感圧抵抗をブリッジ回路を構成するように接続するリー
ド線とを有することを特徴とする。The pressure sensor of the present invention includes a metal diaphragm made of a thin metal plate, an inorganic insulating layer partially provided along the current-carrying part of the metal diaphragm, and a thick film printing and baking technique formed on the inorganic insulating layer. and a lead wire formed on the inorganic insulating layer by thick film printing and baking technology and connecting the pressure sensitive resistor to form a bridge circuit.
本発明の圧力センサでは、金属ダイアフラム上に通電部
に沿って部分的に形成された無機質絶縁層が、金属ダイ
アフラム上に厚膜印刷・焼成技術により感圧抵抗および
リード線を形成することを可能とするとともに、金属ダ
イアフラムとの物理的特性の相違により生じる不要な残
留応力や圧力印加時の感圧抵抗の歪の相違を最小限に抑
えて高精度および高安定度の圧力センサの製造を可能と
する。In the pressure sensor of the present invention, the inorganic insulating layer partially formed on the metal diaphragm along the current-carrying part makes it possible to form the pressure-sensitive resistor and lead wire on the metal diaphragm using thick film printing and baking technology. At the same time, it is possible to manufacture pressure sensors with high precision and high stability by minimizing unnecessary residual stress caused by differences in physical properties with metal diaphragms and differences in distortion of pressure-sensitive resistors when pressure is applied. shall be.
次に、本発明について図面を参照して詳細に説明する。 Next, the present invention will be explained in detail with reference to the drawings.
第１図（ａｌ〜（Ｃ）は、本発明の一実施例に係る圧力
センサを示す上面図、側面図および下面図である。FIGS. 1A to 1C are a top view, a side view, and a bottom view of a pressure sensor according to an embodiment of the present invention.
本実施例の圧力センサは、円形薄板状の金属ダイアフラ
ム１と、金属ダイアフラム１の下面に接着固定された金
属台座２とから、その主要部が構成されている。The main parts of the pressure sensor of this embodiment include a circular thin plate-shaped metal diaphragm 1 and a metal pedestal 2 adhesively fixed to the lower surface of the metal diaphragm 1.
金属ダイアフラム１は、第２図（ａｌおよび（ｈ）に示
ずように、例えばステンレス等の非腐食性の金属で左方
に延出する延出部１ａを有する円形薄板状に形成されて
おり、下面の通電部に沿って部分的に形成された無機質
のガラスグレーズ絶縁Ｎ３と、このガラスグレーズ絶縁
層３上に厚膜印刷・焼成技術により形成された４つの感
圧抵抗４ａ〜４ｄと、ガラスグレーズ絶縁層３上に厚膜
印刷・焼成技術により形成されたリード線５と、ガラス
グレーズ絶縁層３上に厚膜印刷・焼成技術により形成さ
れた電極端子６ａ〜６ｄとが設けられている。As shown in FIGS. 2A and 2H, the metal diaphragm 1 is made of a non-corrosive metal such as stainless steel and is formed into a circular thin plate shape having an extension portion 1a extending to the left. , an inorganic glass glaze insulation N3 partially formed along the current-carrying part on the lower surface, and four pressure-sensitive resistors 4a to 4d formed on this glass glaze insulation layer 3 by thick film printing and baking technology, Lead wires 5 formed on the glass glaze insulating layer 3 by thick film printing and baking techniques, and electrode terminals 6a to 6d formed on the glass glaze insulating layer 3 by thick film printing and baking techniques are provided. .
ガラスグレーズ絶縁層３は、金属ダイアフラム１を形成
する金属材料と熱膨張係数が遺恨したガラスを、液体浸
漬、粉体付着、スクリーン印刷などにより金属ダイアフ
ラム１の下面に付着させた後に、例えば９００℃以上の
高温で焼成することにより形成される。なお、ガラスグ
レーズ絶縁層３は、後に行われる感圧抵抗４ａ〜４ｄ、
リード線５および電極端子６ａ〜６ｄの焼成時の温
度（６００〜９００℃）に耐えるだけの耐熱性が要求さ
れる。The glass glaze insulating layer 3 is formed by attaching glass whose thermal expansion coefficient is different from that of the metal material forming the metal diaphragm 1 to the lower surface of the metal diaphragm 1 by liquid immersion, powder adhesion, screen printing, etc. It is formed by firing at a higher temperature. Note that the glass glaze insulating layer 3 is used for the pressure sensitive resistors 4a to 4d, which will be performed later.
Heat resistance is required to withstand the temperature (600 to 900°C) during firing of the lead wire 5 and the electrode terminals 6a to 6d.
ガラスグレーズ絶縁Ｎ３は、金属ダイアフラム１の下面
の感圧抵抗４ａ〜４ｄ、 リード線５および電極端子
６ａ〜６ｄが設けられる通電部の必要最小限の部分にの
み形成されている。したがって、金属ダイアフラム１の
受圧部１ｂの残留応力はきわめて少なくなっており、ま
た受圧部１ｂの湾曲特性は金属薄板単体の場合にきわめ
て近似するようになっている。The glass glaze insulation N3 is formed only in the minimum necessary portion of the current carrying part where the pressure sensitive resistors 4a to 4d, the lead wires 5, and the electrode terminals 6a to 6d are provided on the lower surface of the metal diaphragm 1. Therefore, the residual stress in the pressure receiving portion 1b of the metal diaphragm 1 is extremely small, and the curvature characteristics of the pressure receiving portion 1b are very similar to those of a single metal thin plate.
感圧抵抗４３〜４ｄは、例えば酸化ルテニューム系の材
料をガラスグレーズ絶縁層３上にスクリーン印刷して６
００〜９００℃の温度で焼成することにより形成される
。感圧抵抗４ａおよび４ｂは金属台座２の中心孔２ａに
露呈する金属ダイアフラム１の受圧部１ｂの周辺部寄り
の左右位置に配置されており、感圧抵抗４Ｃおよび４ｄ
は金属ダイアフラム１の受圧部１ｂの中心部寄りの上下
位置に配置されている。The pressure sensitive resistors 43 to 4d are formed by screen printing a ruthenium oxide material on the glass glaze insulating layer 3, for example.
It is formed by firing at a temperature of 00 to 900°C. The pressure sensitive resistors 4a and 4b are arranged at left and right positions near the periphery of the pressure receiving part 1b of the metal diaphragm 1 exposed in the center hole 2a of the metal pedestal 2, and the pressure sensitive resistors 4C and 4d
are arranged at upper and lower positions close to the center of the pressure receiving portion 1b of the metal diaphragm 1.
電極端子６ａ〜６ｄは、例えば銀、銀−バラジュウム系
等の材料をガラスグレーズ絶縁層３上にスクリーン印刷
して６００〜９００℃の温度で焼成することにより、金
属ダイアフラム１の延出部１ａに並置されるように形成
されている。The electrode terminals 6a to 6d are formed on the extending portion 1a of the metal diaphragm 1 by screen printing a material such as silver or silver-baladium on the glass glaze insulating layer 3 and firing it at a temperature of 600 to 900°C. They are formed to be juxtaposed.
リード線５は、例えば銀、銀−バラジュウム系等の材料
をガラスグレーズ絶縁Ｎ３上にスクリーン印刷して６０
０〜９００℃の温度で焼成することにより、感圧抵抗４
ａ〜４ｄおよび電極端子６ａ〜６ｄをフルブリッジ接続
するように形成されている。なお、リード線５は、金属
ダイアフラムｌの受圧部１ｂには必要最小限しか露呈し
ないように、主として金属ダイアフラム１の周辺部に沿
って形成されている。The lead wire 5 is made by screen printing a material such as silver or silver-baladium on the glass glaze insulation N3.
By firing at a temperature of 0 to 900°C, pressure sensitive resistor 4
a to 4d and electrode terminals 6a to 6d are formed in a full bridge connection. The lead wire 5 is mainly formed along the periphery of the metal diaphragm 1 so that only the necessary minimum amount is exposed to the pressure receiving part 1b of the metal diaphragm 1.
第４図は、感圧抵抗４ａ〜４ｄ、 リード線５および
電極端子６ａ〜６ｄにより構成されるフルブリッジ回路
の回路図を示している。このフルブリッジ回路では、電
極端子６ｂ、６ｄ間に所定の直流電圧を印加すると、金
属ダイアフラム１の受圧部１ｂに圧力Ｐ（第１図Ｑ）］
参照）が印加されていない平衡状態では、電極端子６ａ
、６ｃ間の出力電圧Ｅがほぼ零となるように設定されて
いる。FIG. 4 shows a circuit diagram of a full bridge circuit composed of pressure sensitive resistors 4a to 4d, lead wires 5, and electrode terminals 6a to 6d. In this full bridge circuit, when a predetermined DC voltage is applied between the electrode terminals 6b and 6d, a pressure P (Q in FIG. 1) is applied to the pressure receiving part 1b of the metal diaphragm 1.
In an equilibrium state where no voltage (see reference) is applied, the electrode terminal 6a
, 6c is set so that the output voltage E between the two terminals is approximately zero.
一方、金属台座２は、温度変化によって金属ダイアフラ
ム１との間に応力が生じないように金属ダイアフラム１
と同一の金属材料によりリング状に形成されており、さ
らに金属ダイアフラム１との接着面となる上面上にはガ
ラスグレーズ絶縁層３と同様にしてガラスグレーズ絶縁
層７が形成されている。このガラスグレーズ絶縁層７は
、金属ダイアフラム１を金属台座２に接着固定したとき
に金属台座２と金属ダイアフラム１およびその下面に設
けられたリード線５との間の絶縁を確保するために設け
られている。On the other hand, the metal pedestal 2 is attached to the metal diaphragm 1 to prevent stress from occurring between the metal diaphragm 1 and the metal diaphragm 1 due to temperature changes.
The glass glaze insulating layer 7 is formed in the same manner as the glass glaze insulating layer 3 on the upper surface which becomes the bonding surface with the metal diaphragm 1 . This glass glaze insulating layer 7 is provided to ensure insulation between the metal pedestal 2 and the metal diaphragm 1 and the lead wires 5 provided on the lower surface thereof when the metal diaphragm 1 is adhesively fixed to the metal pedestal 2. ing.
金属ダイアフラム１は、下面の周辺部を金属台座２の上
端面に低融点ガラスなどを用いて４００〜６００°Ｃの
温度に加熱することにより気密的ないし水密的に接着さ
れていて、金属台座２の中心孔２ａ内において圧力Ｐに
応して受圧部１ｂを湾曲変形させることができるように
なっている。The metal diaphragm 1 is airtightly or watertightly bonded to the upper end surface of the metal pedestal 2 by heating the metal diaphragm 1 to a temperature of 400 to 600°C using low-melting glass or the like. The pressure receiving portion 1b can be curved and deformed in response to the pressure P within the center hole 2a.
次に、このように構成された本実施例の圧カセンザの動
作について説明する。Next, the operation of the pressure sensor of this embodiment configured as described above will be explained.
いま、金属ダイアフラム１の上面に圧力Ｐが加えられた
とすると、金属ダイアフラム１の受圧部１ｂは金属台座
２の中心孔２ａに窪み込むように湾曲変形し、感圧抵抗
４ａおよび４ｂには圧縮応力が、感圧抵抗４ｃおよび４
ｄには引張り応力がそれぞれ加わる。したがって、引張
り応力に対して抵抗値が増加する性質の感圧抵抗４ａ〜
４ｄ、例えば酸化ルテニューム系の材料で形成された感
圧抵抗４ａ〜４ｄを使用した場合には、感圧抵抗４ａお
よび４ｂの抵抗値は減少し、感圧抵抗４ｃおよび４ｄの
抵抗値は増加する。このため、金属ダイアフラム１の受
圧部１ｂへの圧力Ｐの加圧による金属ダイアフラム１の
下面に形成されたフルブリッジ回路の出力電圧Ｅの変化
ΔＥは、ΔＥ■Ｐ
となり、この変化ΔＥを測定することにより圧力Ｐの大
−きさを測定することができる。Now, if a pressure P is applied to the upper surface of the metal diaphragm 1, the pressure receiving part 1b of the metal diaphragm 1 is curved and deformed so as to be recessed into the center hole 2a of the metal pedestal 2, and compressive stress is applied to the pressure sensitive resistors 4a and 4b. However, pressure sensitive resistors 4c and 4
A tensile stress is applied to d. Therefore, the pressure sensitive resistors 4a~ whose resistance value increases with respect to tensile stress
4d, for example, when pressure sensitive resistors 4a to 4d formed of a ruthenium oxide material are used, the resistance values of pressure sensitive resistors 4a and 4b decrease, and the resistance values of pressure sensitive resistors 4c and 4d increase. . Therefore, the change ΔE in the output voltage E of the full bridge circuit formed on the lower surface of the metal diaphragm 1 due to the application of pressure P to the pressure receiving part 1b of the metal diaphragm 1 becomes ΔE■P, and this change ΔE is measured. This allows the magnitude of the pressure P to be measured.
なお、上記実施例では、ガラスグレーズ絶縁層３および
７を使用するようにしたが、これらの絶縁層は他の無機
質絶縁層でもよく、例えばアルミナなどのセラミックを
主成分とする無機材料を塗布・焼成して形成するように
してもよい。In the above embodiment, the glass glaze insulating layers 3 and 7 are used, but these insulating layers may be other inorganic insulating layers, for example, by coating an inorganic material mainly composed of ceramic such as alumina. It may be formed by firing.
また、金属ダイアフラム１」二に形成するブリソジ回路
をフルブリッジ回路としたが、ハーフブリッジ回路であ
ってもよい。Further, although the bridge circuit formed on the metal diaphragm 1'' is a full bridge circuit, it may be a half bridge circuit.
以上説明したように、本発明によれば、厚膜印刷・焼成
技術により感圧抵抗を形成するとともにリード線および
電極端子も厚膜印刷・焼成技術により形成するようにし
たので、生産性が良いという効果がある。As explained above, according to the present invention, the pressure sensitive resistor is formed by thick film printing and baking technology, and the lead wires and electrode terminals are also formed by thick film printing and baking technology, so productivity is high. There is an effect.
また、金属ダイアフラム上に無機質絶縁層を通電部に沿
って部分的に設けたので、受圧部の物理的特性は金属材
料のみからなるダイアフラムの物理的特性に近似される
ことになり、ダイアフラムの設計が容易になるという効
果がある。In addition, since an inorganic insulating layer is partially provided on the metal diaphragm along the current-carrying part, the physical characteristics of the pressure-receiving part are approximated to those of a diaphragm made only of metal materials. This has the effect of making it easier.
さらに、金属ダイアフラム上の絶縁層の面積が少なくて
すみ、不要の残留応力が小さくなることにより、高精度
および高安定度の圧力センサが得られるという効果があ
る。Furthermore, the area of the insulating layer on the metal diaphragm is reduced, and unnecessary residual stress is reduced, resulting in the advantage that a pressure sensor with high precision and high stability can be obtained.
第１図ｆａ）〜（Ｃ）は本発明の一実施例に係る圧力セ
ンサを示す上面図、側面図および下面図、第２図＋ａ＋
およびｆｂｌは第１図中に示した金属ダイアフラムの断
面図および下面図、
第３図（ａｌおよびｆｂｌは第１図中に示した金属台座
の上面図および断面図、
第４図は第２図ｆａｔおよび（ｂｌに示した金属ダイア
フラムの下面に形成されたフルブリッジ回路の回路図で
ある。
図において、 ′
１・・・・・金属ダイアフラム、
１ａ・・・・延出部、
１ｂ・・・・受圧部、
２・・・・・金属台座、
２ａ・・・・中心孔、
３．７・・・ガラスグレーズ絶縁層
（無機質絶縁層）、
４ａ〜４ｄ・感圧抵抗、
５・・・・・リード線、
６ａ〜６ｄ・電極端子である。Figures 1 fa) to (C) are a top view, a side view, and a bottom view showing a pressure sensor according to an embodiment of the present invention, and Figure 2 +a+
and fbl are a sectional view and a bottom view of the metal diaphragm shown in FIG. 1, FIG. 3 (al and fbl are a top view and a sectional view of the metal pedestal shown in FIG. It is a circuit diagram of a full bridge circuit formed on the lower surface of the metal diaphragm shown in fat and (bl). In the figure, '1...metal diaphragm, 1a...extension part, 1b...・Pressure receiving part, 2...Metal pedestal, 2a...Center hole, 3.7...Glass glaze insulation layer (inorganic insulation layer), 4a to 4d・Pressure sensitive resistor, 5...・Lead wires, 6a to 6d ・Electrode terminals.
Claims (4)
イアフラムの通電部に沿って部分的に設けられた無機質
絶縁層と、 この無機質絶縁層上に厚膜印刷・焼成技術により形成さ
れた感圧抵抗と、 前記無機質絶縁層上に厚膜印刷・焼成技術により形成さ
れ前記感圧抵抗をブリッジ回路を構成するように接続す
るリード線と、 を有することを特徴とする圧力センサ。(1) A metal diaphragm made of a thin metal plate, an inorganic insulating layer partially provided along the current-carrying part of the metal diaphragm, and a pressure-sensitive resistor formed on the inorganic insulating layer by thick film printing and baking technology. A pressure sensor comprising: a lead wire formed on the inorganic insulating layer by thick film printing and baking technology and connecting the pressure sensitive resistor to form a bridge circuit.
ることを特徴とする特許請求の範囲第１項記載の圧力セ
ンサ。(2) The pressure sensor according to claim 1, wherein the inorganic insulating layer is a glass glaze insulating layer.
とを特徴とする特許請求の範囲第１項記載の圧力センサ
。(3) The pressure sensor according to claim 1, wherein the inorganic insulating layer is a ceramic insulating layer.
とを特徴とする特許請求の範囲第１項記載の圧力センサ
。(4) The pressure sensor according to claim 1, wherein the bridge circuit is a full bridge circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13443687A JPS63298128A (en) | 1987-05-29 | 1987-05-29 | Pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13443687A JPS63298128A (en) | 1987-05-29 | 1987-05-29 | Pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63298128A true JPS63298128A (en) | 1988-12-05 |
Family
ID=15128324
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13443687A Pending JPS63298128A (en) | 1987-05-29 | 1987-05-29 | Pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63298128A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02196939A (en) * | 1989-01-26 | 1990-08-03 | Delphi Co Ltd | Pressure sensor and its manufacture |
| EP1464941A1 (en) * | 2003-04-01 | 2004-10-06 | Siemens Aktiengesellschaft | Pressure sensor |
| EP1835975A2 (en) * | 2004-09-13 | 2007-09-26 | Pall Corporation | Pressure sensing devices and fluid assemblies |
| US7397340B2 (en) | 2003-11-04 | 2008-07-08 | Matsushita Electric Industrial Co., Ltd. | Load sensor and its manufacturing method |
-
1987
- 1987-05-29 JP JP13443687A patent/JPS63298128A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02196939A (en) * | 1989-01-26 | 1990-08-03 | Delphi Co Ltd | Pressure sensor and its manufacture |
| EP1464941A1 (en) * | 2003-04-01 | 2004-10-06 | Siemens Aktiengesellschaft | Pressure sensor |
| US7043995B2 (en) | 2003-04-01 | 2006-05-16 | Siemens Aktiengesellschaft | Pressure sensor with membrane and measuring elements arranged on the membrane |
| US7397340B2 (en) | 2003-11-04 | 2008-07-08 | Matsushita Electric Industrial Co., Ltd. | Load sensor and its manufacturing method |
| EP1835975A2 (en) * | 2004-09-13 | 2007-09-26 | Pall Corporation | Pressure sensing devices and fluid assemblies |
| EP1835975A4 (en) * | 2004-09-13 | 2010-06-30 | Pall Corp | Pressure sensing devices and fluid assemblies |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5154247A (en) | Load cell | |
| US4311980A (en) | Device for pressure measurement using a resistor strain gauge | |
| US4322980A (en) | Semiconductor pressure sensor having plural pressure sensitive diaphragms and method | |
| JP2839418B2 (en) | Temperature sensor | |
| JPS63298128A (en) | Pressure sensor | |
| JPH07101747B2 (en) | Semiconductor pressure sensor | |
| JP2585681B2 (en) | Metal thin film resistive strain gauge | |
| JPS5844323A (en) | Pressure sensor | |
| JP2514067Y2 (en) | Ceramic transformer | |
| JPH0447244A (en) | Semiconductor pressure sensor | |
| JPS5887880A (en) | Semiconductor diaphragm sensor | |
| JPH0269630A (en) | Semiconductor pressure sensor | |
| JPH0450521Y2 (en) | ||
| CN210603176U (en) | Novel thick film strain gauge for sensor | |
| JPH0363537A (en) | Pressure sensor | |
| JPS63315928A (en) | Pressure sensor | |
| JPH0854304A (en) | Pressure sensor | |
| JPS5854676A (en) | Semiconductor pressure converter | |
| JP2512220B2 (en) | Multi-function sensor | |
| JPH1194667A (en) | Pressure sensor | |
| CN118687731A (en) | Metal film pressure core and preparation method thereof | |
| JPH1194649A (en) | Platinum temperature sensor | |
| JPH0566537B2 (en) | ||
| JP3120388B2 (en) | Semiconductor pressure transducer | |
| JPH0342344Y2 (en) |